KR20130023104A - Radar package for millimeter wave - Google Patents

Radar package for millimeter wave Download PDF

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Publication number
KR20130023104A
KR20130023104A KR1020120091923A KR20120091923A KR20130023104A KR 20130023104 A KR20130023104 A KR 20130023104A KR 1020120091923 A KR1020120091923 A KR 1020120091923A KR 20120091923 A KR20120091923 A KR 20120091923A KR 20130023104 A KR20130023104 A KR 20130023104A
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KR
South Korea
Prior art keywords
chip
millimeter wave
wave radar
radar
radar package
Prior art date
Application number
KR1020120091923A
Other languages
Korean (ko)
Inventor
김천수
유현규
Original Assignee
한국전자통신연구원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한국전자통신연구원 filed Critical 한국전자통신연구원
Priority to DE102012107803A priority Critical patent/DE102012107803A1/en
Priority to US13/594,173 priority patent/US20130050016A1/en
Publication of KR20130023104A publication Critical patent/KR20130023104A/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
    • G01S7/03—Details of HF subsystems specially adapted therefor, e.g. common to transmitter and receiver
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
    • H01Q13/08—Radiating ends of two-conductor microwave transmission lines, e.g. of coaxial lines, of microstrip lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart

Abstract

The present invention relates to a millimeter wave radar package, the antenna, the transceiver chip and the digital signal processing chip in a single package to reduce the size and integration of the radar on a chip (radar on a chip) through a small package In addition, low-cost, light-weight, high-precision radar sensors can be implemented to implement ultra-precision radar sensors that can be applied to millimeter-band vehicle radar, weapon monitoring imaging systems, and small / light weight precision measurement radars and robots.

Description

Radar package for millimeter wave {RADAR PACKAGE FOR MILLIMETER WAVE}

The present invention relates to a millimeter wave radar package, and more particularly, a radar-on-chip (TSV) through a through silicon via (TSV) for miniaturization and integration of an antenna, a transceiver chip, and a digital signal processing chip into a single package. Radar package for millimeter wave radar on a chip).

Recently, as Complementary Metal-Oxide Semiconductor (CMOS) technology is able to operate in the millimeter band, the emergence of CMOS chips operating in the millimeter band in the 60 GHz band has begun. In addition, as the operating frequency gets higher and shorter, the size of the antenna gradually decreases, and ultimately, an era in which the antenna is integrated into the chip is expected to arrive.

1 is a view showing a conventional millimeter wave radar package.

As shown in FIG. 1, the millimeter wave radar package according to the general method is configured by integrating a patch antenna 10 together with a transmission / reception chip 20 on a substrate having the same or different dielectric constants.

In the case of the millimeter wave, since the loss of the connection between the patch antenna 10 and the transmitting / receiving chip 20 may be large, a patch antenna (10) may be applied to the transmitting / receiving chip 20 or another chip to reduce such loss. By integrating up to), the loss between the patch antenna 10 and the transmission / reception chip 20 has been reduced.

However, since the size of the patch antenna 10 in which patch-type array antennas are arranged at frequencies below 100 GHz is still several times larger than the size of the transceiver chip 20, even if integrated on the same chip, the size of the patch antenna 10 can be reduced. There is a problem.

In addition, since CMOS devices require nanometer-level process technology to operate at high speeds at millimeter waves, the cost of fabrication increases when the large patch antenna 10 is integrated at the same time.

However, the design rule of the patch antenna 10 is very loose compared to the CMOS technology, and when the micrometer-level CMOS technology is applied, it is possible to design a low-cost antenna.

On the other hand, CMOS DRAM (Dynamic Random Access Memory) technology increases the density according to the rule that the memory capacity doubles every two years, and the increase of the two-dimensional density is almost reached the limit, and recently stacked DRAM Through the use of TSV (Through Silicon Via) technology, the integration of memory devices is dramatically increased in three dimensions.

Related prior art is US Patent No. 6,507,311 (January 14, 2003) "Device and Process for Measuring distance and speed".

SUMMARY OF THE INVENTION An object of the present invention is to provide a millimeter wave radar package for packaging an antenna, a transceiver chip, and a digital signal processing chip into a radar on a chip through TSV for miniaturization and integration. .

According to an aspect of the present invention, a millimeter wave radar package includes a millimeter wave radar package having a radar on chip structure, including: a transceiver chip on which a transceiver module is mounted; And a patch antenna in which a patch-type array antenna is disposed on the silicon substrate, the patch antenna being electrically connected and stacked through a transmission / reception chip and a through silicon via (TSV).

In the present invention, the patch antenna is formed of any one of a polymer substrate, a sapphire substrate, a glass substrate after removing the backside of the silicon substrate.

In the present invention, the removal of the backside is characterized by removing by lapping.

In the present invention, the silicon substrate is characterized in that the high resistance silicon substrate.

In the present invention, a feeder network for transmitting an electric field signal through a waveguide is formed between the transmitting and receiving chip and the patch antenna.

In the present invention, the lower portion of the transceiver chip for input and output of the transceiver module is characterized in that it further comprises a solder ball for flip chip bonding.

According to another aspect of the present invention, a millimeter wave radar package includes a millimeter wave radar package having a radar on chip structure, the digital signal processing chip having a digital signal processing module for processing a radar signal; A transmission / reception module mounted therein, the transmission / reception chip electrically connected to the digital signal processing chip through a TSV; And a patch antenna in which a patch-type array antenna is disposed on the silicon substrate, the patch antenna being electrically connected and stacked through a transmission / reception chip and a through silicon via (TSV).

In the present invention, the patch antenna is formed of any one of a polymer substrate, a sapphire substrate, a glass substrate after removing the backside of the silicon substrate.

In the present invention, the removal of the backside is characterized by removing by lapping.

In the present invention, the silicon substrate is characterized in that a high resistance silicon substrate.

In the present invention, a feeder network for transmitting an electric field signal is formed between the transmitting and receiving chip and the patch antenna.

In the present invention, the lower portion of the digital signal processing chip for input and output of the transceiver module is characterized in that it further comprises a solder ball for flip chip bonding.

The present invention can realize a compact, low-cost, lightweight, high-precision radar sensor by packaging an antenna, a transceiver chip, and a digital signal processing chip into a radar on a chip through TSV for miniaturization and integration. This enables the implementation of ultra-precision radar sensors that can be applied to vehicle radars in the millimeter band, imaging systems for weapon surveillance, and radars for small and light precision measurement, and automatic driving of robots.

1 is a view showing a conventional millimeter wave radar package.
2 and 3 is a three-dimensional view showing a millimeter wave radar package according to an embodiment of the present invention.
4 and 5 are a three-dimensional view and a cross-sectional view showing a millimeter wave radar package according to another embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of a millimeter wave radar package according to the present invention. In this process, the thicknesses of the lines and the sizes of the components shown in the drawings may be exaggerated for clarity and convenience of explanation. In addition, the terms described below are defined in consideration of the functions of the present invention, which may vary depending on the intention or custom of the user, the operator. Therefore, definitions of these terms should be made based on the contents throughout this specification.

2 and 3 is a three-dimensional view showing a millimeter wave radar package according to an embodiment of the present invention.

As shown in FIG. 2, the millimeter wave radar package according to an exemplary embodiment of the present invention includes a transceiver chip 20 and a patch antenna 10 stacked and electrically connected through a TSV 60 to configure a radar on chip package. do.

That is, the transmission / reception chip 20 includes transmission modules and switches such as a high power amplifier, a phase shifter, a digital attenuator, a single pole double throw switch, a drive amplifier, and the like. A receiving module such as a single pole double throw switch, a limiter, a gain block amplifier, and the like may be mounted.

In the patch antenna 10, a patch-type array antenna 12 is disposed on the silicon substrate 11.

In addition, a feeding network 50 for transmitting an electric field signal through a waveguide is formed between the transmitting and receiving chip 20 and the patch antenna 10, and for resisting, shielding, and dissipating a transmission wave passing through a conductor circuit. A ground plane 30 may be formed.

In addition, a solder ball 80 for flip chip bonding is formed at a lower portion of the transmission / reception chip 20 for input / output of the transmission / reception module.

In this way, the patch antenna 10 is stacked on the transmission and reception chip 20 and electrically connected through the TSV 60 to be packaged in a stack structure.

In this case, the adhesive 40 may be used to physically fix the transceiver chip 20 and the patch antenna 10.

The through silicon via (TSV) 60 forms vias in the transmission and reception chip 20 and the patch antenna 10, respectively, and electrically connects chips stacked by filling conductive films in the vias.

The electrical connection through the TSV 60 requires no additional area for electrical connection, no gap for wire bonding between chips, and short signal connection length, thereby reducing the overall size and height and reducing the operating speed of the chip. Can be improved.

On the other hand, when the patch antenna 10 is formed by arranging the patch-type array antenna 12 on the silicon substrate 11, magnetic loss due to the substrate due to the large dielectric constant (ε r = 12.3) of the silicon substrate 11 is obtained. This happens greatly. Therefore, it can be formed of a high resistance silicon substrate to reduce this.

In addition, as shown in FIG. 3, after the backside of the silicon substrate 11 is removed by a mechanical method by lapping, a low loss substrate 90 having a low magnetic loss such as a polymer substrate, a sapphire substrate, a glass substrate, etc. is formed and integrated. can do.

If the digital signal processing chip for digital signal processing is integrated into a single chip, the transmission and reception chip 20 may be packaged into a structure as shown in FIGS. 2 and 3.

TSV package technology enables the use of radar-on-chip packaging for miniaturization and integration, enabling the implementation of ultra-precision radar sensors that can be applied to millimeter-band vehicle radars, weapon monitoring imaging systems, and small, light weight, precision measurement radars, and robots. This is possible.

4 and 5 are a three-dimensional view and a cross-sectional view showing a millimeter wave radar package according to another embodiment of the present invention.

As shown in FIG. 4, in the millimeter wave radar package according to another embodiment of the present invention, a digital signal processing chip 70, a transmission / reception chip 20, and a patch antenna 10 are stacked and a TSV 60 is interposed between the chips. It is electrically connected via a radar-on-chip package.

The digital signal processing chip 70 is equipped with a digital signal processing module for processing a radar signal.

The transmission / reception chip 20 includes a transmission module and a switch such as a high power amplifier, a phase shifter, a digital attenuator, a single pole double throw switch, and a drive amplifier. Receiving modules such as a pole double throw switch, a limiter, and a gain block amplifier may be mounted.

In the patch antenna 10, a patch-type array antenna 12 is disposed on the silicon substrate 11.

In addition, a feeding network 50 for transmitting an electric field signal through a waveguide is formed between the transmitting and receiving chip 20 and the patch antenna 10, and for resisting, shielding, and dissipating a transmission wave passing through a conductor circuit. A ground plane 30 may be formed.

In addition, a solder ball 80 for flip chip bonding is formed under the digital signal processing chip 70 for input / output of the transmission / reception module.

As described above, the digital signal processing chip 70, the transmission / reception chip 20, and the patch antenna 10 are vertically stacked and electrically connected through the TSV 60 to be packaged in a stack structure.

In this case, the adhesive 40 may be used to physically fix the digital signal processing chip 70, the transmission / reception chip 20, and the patch antenna 10.

The through silicon via (TSV) 60 forms vias in the transmission and reception chip 20 and the patch antenna 10, respectively, and electrically connects chips stacked by filling conductive films in the vias.

The electrical connection through the TSV 60 requires no additional area for electrical connection, no gap for wire bonding between chips, and short signal connection length, thereby reducing the overall size and height and reducing the operating speed of the chip. Can be improved.

On the other hand, when the patch antenna 10 is formed by arranging the patch-type array antenna 12 on the silicon substrate 11, magnetic loss due to the substrate due to the large dielectric constant (ε r = 12.3) of the silicon substrate 11 is obtained. This happens greatly. Therefore, it can be formed of a high resistance silicon substrate to reduce this.

In addition, as shown in FIG. 5, the backside of the silicon substrate 11 is removed by a mechanical method by lapping, and then a low loss substrate 90 having a low magnetic loss, such as a polymer substrate, a sapphire substrate, a glass substrate, is formed and integrated. can do.

Thus, according to the millimeter wave radar package of the radar-on-chip structure according to the present invention has the following excellent advantages.

First, by constructing a radar package with a radar on a chip structure by applying TSV, the feeding length of the millimeter wave can be shortened between the antenna and the transmitting and receiving chip, which is the largest in the millimeter band radar system. It is possible to minimize signal attenuation generated when the antenna is connected to the chip.

Second, in the millimeter wave radar package of the radar-on-chip structure, the position of the ground plane, which serves as the ground, does not change even after flip chip packaging, thereby ensuring stable operation without changing the original circuit design characteristics.

Third, by constructing a radar package with a radar on a chip structure by applying TSV, a nano chip is manufactured by applying a design rule of 65nm or less, which is expensive for a transmit / receive chip, and a design rule for an antenna. This loose micrometer-level fabrication technology allows fabrication and lamination, enabling low-cost system fabrication.

Fourth, by applying a TSV to form a radar package of a radar on a chip (Radar On a Chip) structure it can be made even thinner than a system integrated using a low temperature co-fired ceramic (LTCC) substrate.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. I will understand. Accordingly, the technical scope of the present invention should be defined by the following claims.

10 patch antenna 11: silicon substrate
12: patch-type array antenna 20: transceiver chip
30: ground plane 40: adhesive
50: feeding network 60: TSV (Through Silicon Via)
70: digital signal processing chip 80: solder ball
90: low loss substrate

Claims (12)

In the radar package for the millimeter wave of the radar-on-chip structure,
A transceiver chip on which a transceiver module is mounted; And
A patch-type array antenna is disposed on a silicon substrate, the millimeter wave radar package comprising a patch antenna that is electrically connected and stacked through the transmission chip and TSV (Through Silicon Via).
The millimeter wave radar package according to claim 1, wherein the patch antenna is formed of any one of a polymer substrate, a sapphire substrate, and a glass substrate after removing the backside of the silicon substrate.
3. The millimeter wave radar package according to claim 2, wherein the backside is removed by lapping.
The millimeter wave radar package according to claim 1, wherein the silicon substrate is a high resistance silicon substrate.
The millimeter wave radar package according to claim 1, wherein a feeder network for transmitting an electric field signal through a waveguide is formed between the transceiver chip and the patch antenna.
The millimeter wave radar package according to claim 1, further comprising a solder ball for flip chip bonding at a lower portion of the transceiver chip for input / output of the transceiver module.
In the radar package for the millimeter wave of the radar-on-chip structure,
A digital signal processing chip equipped with a digital signal processing module for processing a radar signal;
A transmission / reception module mounted therein, the transmission / reception chip electrically connected to the digital signal processing chip through TSV; And
A patch-type array antenna is disposed on a silicon substrate, the millimeter wave radar package comprising a patch antenna that is electrically connected and stacked through the transmission chip and TSV (Through Silicon Via).
The millimeter wave radar package according to claim 7, wherein the patch antenna is formed of any one of a polymer substrate, a sapphire substrate, and a glass substrate after removing the backside of the silicon substrate.
The millimeter wave radar package according to claim 8, wherein the backside is removed by lapping.
8. The millimeter wave radar package according to claim 7, wherein the silicon substrate is a high resistance silicon substrate.
8. The millimeter wave radar package according to claim 7, wherein a feeder network for transmitting an electric field signal is formed between the transceiver chip and the patch antenna.
The millimeter wave radar package according to claim 7, further comprising a solder ball for flip chip bonding below the digital signal processing chip for input and output of the transmission / reception module.
KR1020120091923A 2011-08-26 2012-08-22 Radar package for millimeter wave KR20130023104A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE102012107803A DE102012107803A1 (en) 2011-08-26 2012-08-24 Radar unit for millimeter waves
US13/594,173 US20130050016A1 (en) 2011-08-26 2012-08-24 Radar package for millimeter waves

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110086009 2011-08-26
KR20110086009 2011-08-26

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015047330A1 (en) * 2013-09-27 2015-04-02 Intel Corporation Die package with superposer substrate for passive components
KR20190010991A (en) * 2017-07-24 2019-02-01 엘지이노텍 주식회사 Antenna
WO2019070509A1 (en) * 2017-10-03 2019-04-11 Intel IP Corporation Hybrid and thinned millimeter-wave antenna solutions
KR101993453B1 (en) * 2019-01-25 2019-06-26 국방과학연구소 Method of controlling dielectric constant of composite material by fine pattern printing
US11133602B2 (en) 2019-01-25 2021-09-28 Corning Incorporated Antenna stack
KR102459274B1 (en) * 2021-09-27 2022-10-26 중앙대학교 산학협력단 Wide-band or multi-band planar multi-layer antenna

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015047330A1 (en) * 2013-09-27 2015-04-02 Intel Corporation Die package with superposer substrate for passive components
US10615133B2 (en) 2013-09-27 2020-04-07 Intel Corporation Die package with superposer substrate for passive components
KR20190010991A (en) * 2017-07-24 2019-02-01 엘지이노텍 주식회사 Antenna
WO2019070509A1 (en) * 2017-10-03 2019-04-11 Intel IP Corporation Hybrid and thinned millimeter-wave antenna solutions
US11211688B2 (en) 2017-10-03 2021-12-28 Intel Corporation Hybrid and thinned millimeter-wave antenna solutions
KR101993453B1 (en) * 2019-01-25 2019-06-26 국방과학연구소 Method of controlling dielectric constant of composite material by fine pattern printing
US11133602B2 (en) 2019-01-25 2021-09-28 Corning Incorporated Antenna stack
US11495889B2 (en) 2019-01-25 2022-11-08 Agency For Defense Development Method of controlling dielectric constant of composite material by micro pattern printing
KR102459274B1 (en) * 2021-09-27 2022-10-26 중앙대학교 산학협력단 Wide-band or multi-band planar multi-layer antenna

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