KR20130020586A - Lateral_flow atomic layer deposition apparatus and atomic layer deposition method using the same - Google Patents

Abstract

The horizontal flow atomic layer deposition apparatus and the deposition method according to an embodiment of the present invention are two gas inlet channels and two gases connected to two gas outlets symmetrically formed with respect to the substrate on which the thin film is deposited. By forming the outlet channel, the flow direction of the gas flowing on the substrate can be induced differently. Thus, compared with the conventional horizontal flow atomic layer deposition apparatus in which the supplied source gas and the reactant gas flow in only one direction on the substrate, the uniformity of the deposited film is increased.

Description

Horizontal flow atomic layer deposition apparatus and atomic layer deposition method {LATERAL_FLOW ATOMIC LAYER DEPOSITION APPARATUS AND ATOMIC LAYER DEPOSITION METHOD USING THE SAME}

The present invention relates to a horizontal flow atomic layer deposition apparatus and a thin film deposition method using the same.

In the manufacture of semiconductor devices, efforts have been made to improve devices and processes for forming high quality thin films on substrates. Recently, two or more reaction raw materials are separated in time and sequentially supplied onto a substrate to grow a thin film through surface reaction, and repeatedly performed to form a thin film having a desired thickness. Atomic layer deposition (ALD) method This has been proposed. Since the film is formed by the surface reaction, using this process, a film having a uniform thickness can be obtained over the entire surface of the substrate regardless of the irregularities of the substrate, and the impurities mixed in the film can be reduced to form a film having excellent properties. have.

Among the atomic layer deposition apparatus used for atomic layer deposition, a horizontal flow atomic layer reactor, in which gas flows in a direction parallel to the substrate, can quickly and easily change the gas atmosphere in the reactor because the gas flow in the reactor is fast and simple. The time required for the gas supply cycle for sequentially supplying process gases can be minimized. Examples of such a horizontal flow atomic layer reactor have disclosed a reactor suitable for a time division raw material feed atomic layer deposition method and a thin film manufacturing method using the same according to Korean Patent No. 624030 and US Pat. No. 6,539,891. In addition, examples of improving the same have been filed in Korean Patent Application No. 2005-0038606 and US Patent Application No. 11 / 429,533. In this reactor, the plasma atomic layer deposition method may be performed by supplying power to an electrode for supplying radio wave (RF) power in time to a gas supply cycle.

Another example of a horizontal flow atomic bed reactor is disclosed in US Pat. No. 5,711,811, US Pat. No. 6,562,140. In the present invention, the distance between the surface on which the substrate is placed and the surface facing the substrate is kept constant in the reactor, so that the flow of gas on the substrate is kept uniform and close to the laminar flow.

However, the horizontal flow reactor has a problem in that the difference in film uniformity of the thin film on the substrate in the gas inlet and the gas outlet is large. Improvement can be made by rotating the substrate, but there is a problem in that the complexity of the structure and the setting of the process conditions are not easy. In addition, efforts have been made to resolve such nonuniformities by changing the direction of gas flow on the substrate (US 6806211; US 7020981; US2009 / 0217873). However, there is a limit to presenting a compact structure optimized for atomic layer deposition.

An object of the present invention is to provide a horizontal flow atomic layer deposition apparatus and a horizontal flow atomic layer deposition method capable of increasing the uniformity of the film formed on the substrate.

An atomic layer deposition apparatus according to an embodiment of the present invention is a horizontal flow atomic layer deposition apparatus in which a process gas flows in a direction substantially parallel to the substrate between the surface on which the substrate is placed and the surface facing the substrate, the substrate support for supporting the substrate, A reactor cover contacting the substrate support to form a reaction chamber, a first gas flow control plate disposed between the reactor cover and the substrate support, and an upper surface of the first gas flow control plate and an inner lower surface of the reactor cover And a first gas outlet and a second gas outlet connected to the first gas outlet channel and the second gas outlet channel therebetween.

The first gas outlet and the second gas outlet may be disposed in opposite directions with respect to the upper surface of the substrate.

It may further include a first gas inlet and a second gas inlet for supplying a process gas to the reaction chamber.

Further comprising a second gas flow control plate disposed below the first gas flow control plate, the process gas supplied through the first gas inlet and the second gas inlet is the first gas flow control plate and the second gas flow. It may be supplied over the substrate through a first gas inlet channel and a second gas inlet channel between the throttle.

The first gas inlet channel and the second gas inlet channel may be disposed in opposite directions with respect to the upper surface of the substrate.

The first gas outlet channel and the second gas outlet channel may include a space between a first outlet groove and a second outlet groove formed on an upper surface of the first gas flow control plate and an inner lower surface of the reactor cover. .

The first gas inlet channel and the second gas inlet channel may include a space between a first inlet groove and a second inlet groove formed on a lower surface of the first gas flow control plate and an upper surface of the second gas flow control plate. Can be.

Process gas supplied through the first gas inlet may flow through the first gas inlet channel in a laminar flow over the substrate in a first direction.

Process gas flowing in the first direction on the substrate may be exhausted out of the reactor through the second gas outlet channel.

Process gas supplied through the second gas inlet may flow through the second gas inlet channel in a laminar flow in a second direction on the substrate.

Process gas flowing in the second direction on the substrate may be exhausted out of the reactor through the first gas outlet channel.

The second direction may be opposite to the first direction.

The first gas outlet and the second gas outlet may include a first valve connected to an exhaust pump and a second valve connected to an inert gas supply line.

When the process gas is exhausted through the first gas outlet, the inert gas may be supplied to the second gas outlet. In this case, an inert gas may be supplied to the first gas inlet groove.

When the process gas is exhausted through the second gas outlet, the inert gas may be supplied to the first gas outlet. In this case, an inert gas may be supplied to the second gas inlet groove.

The atomic layer deposition method according to an embodiment of the present invention is a first source gas supply step of supplying a source gas on the substrate in a first direction parallel to the substrate surface and parallel to the substrate surface, and different from the first direction A first gas supply cycle comprising a first reaction gas supply step of supplying a reaction gas on the substrate in a second direction, and a second source gas supply step of supplying the source gas in the second direction on the substrate; And a second gas supply cycle comprising a second reaction gas supply step of supplying the reaction gas on the substrate in the first direction.

The first source gas supplying step and the first reaction gas supplying step are repeated a plurality of times during the first gas supplying cycle, and during the second gas supplying cycle, the second source gas supplying step and the second reaction gas supplying The step may be repeated a plurality of times.

The first source gas supplying step and the first reaction gas supplying step are alternately repeated a plurality of times during the first gas supplying cycle, and during the second gas supplying cycle, the second source gas supplying step and the second reaction The gas supply step may be repeated a plurality of times alternately.

The first gas supply cycle and the second gas supply cycle may be repeated a plurality of times.

The first gas supply cycle and the second gas supply cycle may be repeated a plurality of times alternately.

After repeating the first gas supply cycle a plurality of times, the second gas supply cycle may be repeated a plurality of times.

After repeating the first gas supply cycle a plurality of times, the second gas supply cycle may be repeated a plurality of times.

The horizontal flow atomic layer deposition apparatus and the deposition method according to an embodiment of the present invention are two gas inlet channels and two gases connected to two gas outlets symmetrically formed with respect to the substrate on which the thin film is deposited. By forming the outlet channel, the flow direction of the gas flowing on the substrate can be induced differently. Thus, compared with the conventional horizontal flow atomic layer deposition apparatus in which the supplied source gas and the reactant gas flow in only one direction on the substrate, the uniformity of the deposited film is increased.

1 is a cross-sectional view of a horizontal flow atomic layer deposition apparatus according to an embodiment of the present invention.
2 is a cross-sectional view of a horizontal flow atomic layer deposition apparatus according to an embodiment of the present invention.
Figure 3a is a view showing the top of the upper gas flow control plate of the horizontal flow atomic layer deposition apparatus according to an embodiment of the present invention.
Figure 3b is a view showing the lower portion of the upper gas flow control plate of the horizontal flow atomic layer deposition apparatus according to an embodiment of the present invention.
4 is a view showing a lower gas flow control plate of the horizontal flow atomic layer deposition apparatus according to an embodiment of the present invention.
5A and 5B are views for explaining a gas inflow and outflow method of a horizontal flow atomic layer deposition apparatus according to an embodiment of the present invention.

DETAILED DESCRIPTION Embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

First, a horizontal flow atomic layer deposition apparatus according to an embodiment of the present invention will be described with reference to FIGS. 1 and 2. 1 and 2 are cross-sectional views of a horizontal flow atomic layer deposition apparatus according to an embodiment of the present invention. 1 is a cross-sectional view of a horizontal flow atomic layer deposition apparatus with a gas inlet channel viewed from the front, and FIG. 2 is a cross-sectional view of a horizontal flow atomic layer deposition apparatus with a gas inlet channel viewed from the side.

1 and 2, the horizontal flow atomic layer deposition apparatus according to an embodiment of the present invention is in close contact with the reactor support 110, the reactor support 110 on which the substrate 150 on which the thin film is deposited is reacted. A reactor cover 120 defining the seal, and a gas flow control 105. The reaction chamber includes a reaction space in which the substrate is processed, which is defined as the space between the upper surface of the reactor support 110 and the lower surface of the gas flow control unit 105.

The upper portion of the reactor cover 120 is provided with a first gas inlet tube 101 and a second gas inlet tube 102, and a first gas outlet 103a and a second gas outlet 103b. Although the horizontal flow atomic layer deposition apparatus according to the illustrated embodiment includes two gas outlets, the horizontal flow atomic layer deposition apparatus according to another embodiment of the present invention may include three or more gas outlets.

The first gas inlet pipe 101 and the second gas inlet pipe 102 may be symmetrically disposed at both sides with respect to the center of the reactor, and include a first gas outlet 103a and a second gas outlet ( 103b) may also be symmetrically disposed at both sides with respect to the center of the reactor, such as the first gas inlet tube 101 and the second gas inlet tube 102.

The first and second gas inlet tubes 101 and 102 are connected with reaction sources (not shown). The first and second gas inlet tubes 101 and 102 are configured to supply different first and second reaction gases, respectively, preferably the reaction gases are provided in the gas phase through the gas inlet tubes 101 and 102. Flows into.

The first valve V1 and the second valve V2 are connected to the first gas outlet 103a, and the third valve V3 and the fourth valve V4 are connected to the second gas outlet 103b. It is connected. The first valve V1 and the third valve V3 are connected to the purge gas supply part P1, and the second valve V2 and the fourth valve V4 are connected to the exhaust pump P2.

Accordingly, in the exhaust phase of the gas, the valves V2 and V4 are opened, the valves V1 and V3 are closed, and in the purge gas supply phase, the valves V1 and V3 are opened and the valves V2 and V4 are closed. do. The purge gas serves to prevent the process gas supplied through the first and second gas inlet pipes 101 and 102 from entering the first gas outlet 103a and the second gas outlet 103b.

In addition, although not shown, the horizontal flow atomic layer deposition apparatus according to the embodiment of the present invention may include a switching mechanism for adjusting the valve. For example, a programmed computer may be used as the switching mechanism to sequentially supply the reactant gases and the inert purge gas in accordance with the gas supply cycle of atomic layer deposition.

In addition, the horizontal flow atomic layer deposition apparatus according to an embodiment of the present invention may include a heating device (not shown) mounted on the surface of the reactor cover (120). The heating device heats the reactor lid 120 to a constant temperature, preventing the reaction gases from condensing (condensing) on the inner surface of the reactor lid 120.

Reactor base 110 may also include a substrate heating unit (not shown). The substrate heating unit is mounted under the reactor support 110 and during the deposition process, the temperature of the substrate is lower than the decomposition temperature of the reaction gases and higher than the condensation temperature of the reaction gases to the temperature required for the process. To keep it heated. A substrate support (not shown) for supporting the substrate is made of metal and is preferably electrically grounded. Or it may consist of nonmetallic materials, such as a ceramic. The type and material of the reactor can be changed according to the design of the reactor.

The gas flow control unit 105 includes an upper gas flow control plate 130 and a lower gas flow control plate 140.

1 and 2, the arrows indicate the flow path of the gas. The process gas supplied through the first gas inlet 101 moves between the upper gas flow control plate 130 and the lower gas flow control plate 140 of the gas flow control unit 105 over the substrate, and thereafter, exits the second gas outlet. The process gas, which flows out to the part 103b and is supplied through the second gas inlet 102, passes between the upper gas flow control plate 130 and the lower gas flow control plate 140 of the gas flow control unit 105 to the substrate. After moving, it flows out to the first gas outlet 103a.

The upper gas flow control plate 130 is stacked on the lower gas flow control plate 140, and a central portion of the upper gas flow control plate 130 is attached to the inner bottom surface of the reactor cover 120. The upper gas flow control plate 130 and the lower gas flow control plate 140 may be mounted on or separated from the reactor cover 120. Through such a configuration, maintenance and cleaning can be facilitated. However, the upper gas flow control plate 130 and the lower gas flow control plate 140 may form one body as one component of the reactor cover 120. Gas flow controllers 130 and 140 define a flow path of each gas, whereby each gas is introduced into the reaction space.

Further comprising a plasma generating electrode, during the deposition process, it is possible to generate a plasma in the reaction space, the plasma generating electrode may be formed in part on the lower surface of the lower gas flow control plate 140, in this case the plasma generating electrode You can define the top of the space.

3A, 3B, and 4, the gas flow controller of the horizontal flow atomic layer deposition apparatus according to the exemplary embodiment of the present invention will be described. Figure 3a is a view showing an upper portion of the upper gas flow control plate of the horizontal flow atomic layer deposition apparatus according to an embodiment of the present invention, Figure 3b is a view of the upper gas flow control plate of a horizontal flow atomic layer deposition apparatus according to an embodiment of the present invention 4 is a view showing a bottom, and FIG. 4 is a view showing a bottom view of a bottom gas flow control plate of a horizontal flow atomic layer deposition apparatus according to an exemplary embodiment of the present invention.

3A and 3B, the upper surface of the upper gas flow control plate 130 has first and second outlet grooves 241a and 241b tapered to the center portion. That is, the first and second outlet grooves 241a and 241b have a fan-shaped shape that is widened toward the edge from the central portion of the upper gas flow control plate 130. The first outlet groove 241a, along with a portion of the inner lower surface of the reactor lid 120, defines an outlet passageway of the remaining reactant gases and reaction byproducts. The first outlet groove 241a is connected to the first gas outlet 103a to provide a passage for outflow of gas to the first gas outlet 103a. Similarly, the second outlet groove 241b, along with a portion of the inner lower surface of the reactor cover 120, defines an outlet passageway for the remaining reacted gases and reaction byproducts, the second outlet groove 241b defining the second gas. It is connected to the outlet 103b and provides a passage for outflow of gas to the second gas outlet 103b.

2 and 3A, a first gas outlet 103a and a second gas outlet 103b are disposed on the upper gas flow control plate 130. If the second valve V2 of the first gas outlet 103a is opened and the gas is discharged, the first outlet groove 241a of the upper gas flow control plate 130 may have an inner lower surface of the reactor cover 120. And a gas outlet passage to the first gas outlet 103a, and the fourth valve V4 of the second gas outlet 103b is opened, and the gas is discharged, the upper gas flow control plate 130 The second outlet groove 241b defines a gas outlet passage to the second gas outlet 103b together with the inner lower surface of the reactor cover 120.

Accordingly, the gas inflow direction of the supplied source gas and the reaction gas can be adjusted. This will be described in detail with reference to FIGS. 3A and 3B below.

The upper gas flow control plate 130 has through holes 245a and 245b that vertically penetrate the upper gas flow control plate 130. The through holes 245a and 245b are formed to penetrate through the lower holes 246a and 246b of the upper gas flow control plate 130 as shown in FIG. 3B.

The lower holes 246a and 246b of the upper gas flow control plate 130 are connected to the fan-shaped gas supply channels through narrow channels, thereby, along with the upper surface of the lower gas flow control plate 140, in a constant direction on the substrate. This leads to a flowing layer flow. Specifically, referring to FIG. 3B, the lower surface of the upper gas flow control plate 130 has first and second inlet grooves 243a and 243b tapered toward the center. That is, the first and second inlet grooves 243a and 243b have a fan shape that is widened toward the edge from the center of the lower surface of the upper gas flow control plate 130. The first inlet groove 243a may be disposed at a position corresponding to the first outlet groove 241a, and the second inlet groove 243b may be disposed at a position corresponding to the second outlet groove 241b. The first inlet groove 243a defines a passage of the source gas supplied from the first gas inlet pipe 101 together with the upper surface of the lower gas flow control plate 140. The second inlet groove 243b, along with the upper surface of the lower gas flow control plate 140, defines a passage of the source gas supplied from the second gas inlet pipe 102.

Referring to FIG. 4, the lower gas flow control plate 140 defines an upper portion of the reaction space. The lower surface of the lower gas flow control plate 140 has recesses 244 or depressions, and the mounted substrate and the reaction space. Face away. The recess 244 of the lower gas flow control plate 140 is formed parallel to the gas flow direction, so that the reaction space may have a tunnel shape having a constant height along the gas flow direction. However, the lower portion of the lower gas flow control plate 140 may be a circular plate shape having a constant thickness, having a uniform distance from the substrate.

5A and 5B, gas inflow and outflow of the horizontal flow atomic layer deposition apparatus according to the embodiment of the present invention will be described. 5A and 5B are views for explaining gas inflow and outflow of a horizontal flow atomic layer deposition apparatus according to an embodiment of the present invention. Arrows in FIG. 5A and FIG. 5B indicate the flow direction of the gas.

Referring to FIG. 5A, when the source gas is supplied through the first gas inlet 101, the supplied source gas is formed on the lower surface of the upper gas flow control plate 130 and the lower portion of the first gas inlet 243a. As it flows through the gas flow passages between the top surfaces of the gas flow control plate 140, it spreads flatly in a sector. It then moves over the substrate through a gas flow channel defined as the space between the bottom surface of the lower gas flow control plate 140 and the substrate surface. At this time, the source gas flows on the substrate in a constant layer flow in the first direction. Thereafter, the source gas flowing over the substrate moves through the gas outlet channel between the second outlet groove 241b of the upper gas flow control plate 130 and the inner bottom surface of the reactor cover 120, thereby providing a second gas outlet ( Through 103b). At this time, the third valve V3 connected to the second gas outlet 103b is locked and the fourth valve V4 is opened. In addition, the second valve V2 connected to the first gas outlet 103a is closed, and the first valve V1 is opened, and an inert purge gas such as argon is introduced through the first gas outlet 103a. Supplied. By supplying such purge gas, the source gas supplied through the first gas inlet 101 is prevented from flowing back to the first gas outlet 103a. In addition, the inert gas such as argon is supplied through the second gas inlet 102 to prevent the source gas passing through the reaction space from flowing back to the second gas inlet 243b.

Next, referring to FIG. 5B, when the reaction gas is supplied through the second gas inlet 102, the supplied reaction gas is formed in the second gas inlet groove 243b formed on the lower surface of the upper gas flow control plate 130. And flows through the gas flow path between the upper surface of the lower gas flow control plate 140 and spreads out flatly in a fan shape. It then moves over the substrate through a gas flow channel defined as the space between the bottom surface of the lower gas flow control plate 140 and the substrate surface. At this time, the reaction gas flowing on the substrate flows in a constant layer flow in a second direction opposite to the first direction. Thereafter, the reaction gas flowing over the substrate moves through the gas outlet channel between the first outlet groove 241a of the upper gas flow control plate 130 and the inner lower surface of the reactor cover 120, thereby providing a first gas outlet ( It is exhausted to the outside through 103a). At this time, the first valve V1 connected to the first gas outlet 103a is locked and the second valve V2 is opened. In addition, the fourth valve V4 connected to the second gas outlet 103b is closed, and the third valve V3 is opened, and an inert purge gas such as argon is introduced through the second gas outlet 103b. Supplied. By the supply of this purge gas, the source gas supplied through the second gas inlet 102 is prevented from flowing back to the second gas outlet 103b. In addition, the inert gas such as argon is supplied through the first gas inlet 101 to prevent the source gas passing through the reaction space from flowing back to the first gas inlet 243a.

By repeating the supplying of the source gas shown in FIG. 5A and the supplying of the reaction gas shown in FIG. 5B above, the gas flow direction can be easily changed on the substrate and the uniformity of the thin film formed on the substrate can be improved.

Gas supplied to the first gas inlet 101 and the second gas inlet 102 may be opposite to the example described with reference to FIGS. 5A and 5B.

Next, a thin film deposition method according to an exemplary embodiment of the present invention will be described with reference to FIGS. 5A and 5B.

Using the horizontal flow differential deposition apparatus of the present invention, a method of forming a thin film includes a first gas supply cycle and a second gas supply cycle.

The first gas supply cycle is a first source gas supply step of supplying a source gas in a first direction onto the substrate through the first gas inlet 101, as shown in FIG. 5A, and as shown in FIG. 5B. And a first reactant supplying step of supplying the reaction gas through the second gas inlet 102 in a second direction different from the first direction on the substrate. During the first gas supply cycle, the first source gas supply step and the first reaction gas supply step described above may be alternately repeated a plurality of times. Also, during the first gas supply cycle, the first source gas supply step may be repeated a plurality of times, and then the first reaction gas supply step may be repeated a plurality of times.

The second gas supply cycle includes a second source gas supply step of supplying source gas in a second direction over the substrate through the second gas inlet 102, and a first gas over the substrate through the first gas inlet 101. A second reaction gas supplying step of supplying the reaction gas in a direction. During the second gas supply cycle, the second source gas supply step and the second reaction gas supply step described above may be alternately repeated a plurality of times. In addition, during the second gas supply cycle, the second source gas supply step may be repeated a plurality of times, and then the second reaction gas supply step may be repeated a plurality of times.

The first cycle and the second cycle may be repeated a plurality of times, or the first cycle and the second cycle may be alternately repeated a plurality of times to deposit a thin film of a desired thickness.

As such, the atomic layer deposition method according to the embodiment of the present invention may include a plurality of gas supply cycles for supplying source gas and reactant gas in different directions on the substrate, thereby depositing a highly uniform thin film on the substrate.

In addition, two or more gas outlets of the horizontal flow atomic layer deposition apparatus may be provided.

As such, the horizontal flow atomic layer deposition apparatus according to the embodiment of the present invention forms two gas inflow channels and two gas outflow channels formed symmetrically with respect to the substrate on which the thin film is deposited, thereby allowing the gas to flow on the substrate. Can lead to different flow directions. Thus, compared with the conventional horizontal flow atomic layer deposition apparatus in which the supplied source gas and the reactant gas flow in only one direction on the substrate, the uniformity of the deposited film is increased.

In addition, the horizontal flow atomic layer deposition apparatus according to an embodiment of the present invention is two gas inlet groove and two gas are formed symmetrically with each other in the upper gas flow control plate without rotating the substrate or additional gas flow control plate during the process By forming the outlet groove, it is possible to induce gas flow in two different directions, simplifying the structure of the deposition apparatus and reducing the manufacturing and maintenance costs.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, Of the right.

Claims (24)

A horizontal flow atomic layer deposition apparatus in which a process gas flows in a direction substantially parallel to a substrate between a surface on which the substrate is placed and a surface facing the substrate,
A substrate support for supporting a substrate,
A reactor cover contacting the substrate support to form a reaction chamber,
A first gas flow control plate disposed between the reactor cover and the substrate support, and
A horizontal flow atom comprising a first gas outlet and a second gas outlet connected to a first gas outlet channel and a second gas outlet channel between an upper surface of the first gas flow control plate and an inner lower surface of the reactor cover Layer deposition apparatus.
In claim 1,
And the first gas outlet and the second gas outlet are disposed in opposite directions with respect to the upper surface of the substrate.
In claim 2,
And a first gas inlet and a second gas inlet for supplying a process gas to the reaction chamber.
4. The method of claim 3,
Further comprising a second gas flow control plate disposed below the first gas flow control plate,
Process gas supplied through the first gas inlet and the second gas inlet is supplied onto the substrate through a first gas inlet channel and a second gas inlet channel between the first gas flow control plate and the second gas flow control plate. Horizontal flow atomic layer deposition apparatus.
5. The method of claim 4,
And the first gas inlet channel and the second gas inlet channel are disposed in opposite directions with respect to the upper surface of the substrate.
In claim 2,
The first gas outlet channel and the second gas outlet channel are horizontal flows formed by a space between a first outlet groove and a second outlet groove formed in an upper surface of the first gas flow control plate and an inner lower surface of the reactor cover. Atomic layer deposition apparatus.
The method of claim 5,
The first gas inlet channel and the second gas inlet channel may include a space between a first inlet groove and a second inlet groove formed in a lower surface of the first gas flow control plate and an upper surface of the second gas flow control plate. Horizontal flow atomic layer deposition apparatus.
In claim 7,
And a process gas supplied through the first gas inlet flows through the first gas inlet channel in a layer flow on the substrate in a first direction.
9. The method of claim 8,
And a process gas flowing in the first direction on the substrate is exhausted out of the reactor through the second gas outlet channel.
9. The method of claim 8,
And a process gas supplied through the second gas inlet flows through the second gas inlet channel in a layer flow on the substrate in a second direction.
11. The method of claim 10,
And a process gas flowing in the second direction on the substrate is exhausted out of the reactor through the first gas outlet channel.
11. The method of claim 10,
And wherein the second direction is opposite to the first direction.
In claim 2,
And the first gas outlet and the second gas outlet comprise a first valve connected to an exhaust pump and a second valve connected to an inert gas supply line.
In claim 13,
When the process gas is exhausted through the first gas outlet, the first gas valve is closed, the first valve is closed and the second valve is open, the horizontal flow atomic layer deposition apparatus is supplied.
The method of claim 14,
And an inert gas is supplied to the first gas inlet to the first gas inlet when the process gas is exhausted through the first gas outlet.
In claim 13,
And when the process gas is exhausted through the second gas outlet, the first valve is closed and the second valve is opened to supply the inert gas to the first gas outlet.
17. The method of claim 16,
And when the process gas is exhausted through the second gas outlet, the inert gas is supplied to the second gas inlet to the second gas inlet.
A first source gas supplying step of supplying a source gas onto the substrate in a first direction parallel to the substrate surface, and
A first gas supply cycle comprising a first reactant gas supply step of supplying a reactant gas over the substrate in a second direction different from the first direction, parallel to the substrate surface, and
A second source gas supplying step of supplying the source gas in the second direction on the substrate, and
And a second gas supply cycle comprising a second reaction gas supply step of supplying the reaction gas on the substrate in the first direction.
The method of claim 18,
The first source gas supplying step and the first reaction gas supplying step are repeated a plurality of times during the first gas supplying cycle, and during the second gas supplying cycle, the second source gas supplying step and the second reaction gas supplying The method is repeated a plurality of times atomic layer deposition.
20. The method of claim 19,
During the first gas supply cycle, the first source gas supply step and the first reaction gas supply step are alternately repeated a plurality of times,
During the second gas supply cycle, the second source gas supply step and the second reaction gas supply step are alternately repeated a plurality of times.
The method of claim 18,
And the first gas supply cycle and the second gas supply cycle are repeated a plurality of times.
The method of claim 18,
And the first gas supply cycle and the second gas supply cycle are alternately repeated a plurality of times.
The method of claim 18,
After repeating the first gas supply cycle a plurality of times
And repeating the second gas supply cycle a plurality of times.
The method of claim 18,
And wherein the second direction is opposite to the first direction.

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