KR20130015794A - Photonic device of using surface plasmon - Google Patents

Photonic device of using surface plasmon Download PDF

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Publication number
KR20130015794A
KR20130015794A KR1020110078021A KR20110078021A KR20130015794A KR 20130015794 A KR20130015794 A KR 20130015794A KR 1020110078021 A KR1020110078021 A KR 1020110078021A KR 20110078021 A KR20110078021 A KR 20110078021A KR 20130015794 A KR20130015794 A KR 20130015794A
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South Korea
Prior art keywords
surface plasmon
channel region
layer
channel
gate electrode
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KR1020110078021A
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Korean (ko)
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KR101293443B1 (en
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전형탁
방석환
이승준
박주현
고영빈
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한양대학교 산학협력단
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Light Receiving Elements (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE: An optical device using surface Plasmon is provided to implement a switching by sensing the difference of currents flowing in a channel according to incident light. CONSTITUTION: A gate dielectric layer(120) is formed on a gate electrode. A channel region(130) is formed on the gate dielectric layer. A surface Plasmon layer(140) transmits energy to the channel region. A source electrode is formed on one side of the surface Plasmon layer. An optical device includes a drain electrode facing the source electrode.

Description

Photonic Device of using Surface Plasmon

The present invention relates to an optical device, and more particularly to an optical device using a surface plasmon shape.

A typical optical device may be classified into a portion for absorbing or transmitting incident light to convert incident light into an electrical signal and a portion for forming light in response to an applied electrical signal.

In order to absorb the incident light, the photoreactive material must have a lower bandgap than the incident light. Application of this is an optical sensor represented by a photodiode or the like. In addition, in order to transmit the incident light, the photoreactive material must have a lower bandgap than the incident light. In particular, optical filters and the like that absorb only specific wavelengths and transmit light in the remaining wavelength ranges have various applications.

In addition, a light emitting diode is a typical device that forms light in response to an electrical signal applied from the outside.

In particular, an optical device that generates an electrical signal or the like in response to light emitted from the outside, when light having energy above the energy bandgap of the photoreactive material is incident, absorbs the light and detects it.

However, such an optical device is limited in its properties only by physical properties such as bandgap energy of a material that absorbs light energy. The characteristics of the photoreaction also depend on the amount of energy to which light is irradiated. Therefore, there is a limit to increase the amount of light absorption by using a material having a high absorption coefficient or by increasing the thickness of the light absorption layer.

An object of the present invention for solving the above problems is to provide an optical device that improves the photoreactivity by using the surface plasmon phenomenon.

The present invention for achieving the above object, a gate electrode formed on a substrate; A gate dielectric layer formed on the gate electrode; A channel region formed on the gate dielectric layer; A surface plasmon layer formed on the channel region and composed of metal nanoparticles to generate an energy transfer phenomenon by collective vibration of free electrons for incident light, and to transfer the generated energy to the channel region; A source electrode formed on one side of the surface plasmon layer and electrically connected to the channel region; And an optical device including a drain electrode facing the source electrode around the surface plasmon layer.

In addition, the above object of the present invention, the gate electrode formed on the substrate; A gate dielectric layer formed on the gate electrode; A channel region formed on the gate dielectric layer and forming two channels by bias and incident light applied from the gate electrode; A surface plasmon layer formed on the channel region and generating an energy transfer phenomenon according to a surface plasmon phenomenon due to the incident light, and transferring the generated energy to the channel region; A source electrode formed on one side of the surface plasmon layer and electrically connected to the channel region; And a drain electrode facing the source electrode around the surface plasmon layer.

According to the present invention described above, the optical device changes the aspect of the channel formation depending on whether light is incident. As a result, a difference occurs in the amount of current flowing through the channel region of the optical device, and the external circuit detects this to check whether light is incident and the amount of incident light.

In addition, in the present invention, a separate channel is formed by the surface plasmon phenomenon irrespective of the bias applied to the gate electrode. Through this, the difference in the current flowing through the channel can be detected according to whether light is incident, and light detection or switching operation by light becomes possible.

1 is a cross-sectional view showing an optical device according to a preferred embodiment of the present invention.
2 is a graph showing the absorbance of an optical device according to a preferred embodiment of the present invention.
3 is a graph showing the voltage-current characteristics of the optical device according to an embodiment of the present invention.
4 is a band diagram of an optical device according to a preferred embodiment of the present invention.
5 is a schematic diagram of an optical device for explaining the operation of the band diagram shown in FIG. 4 according to a preferred embodiment of the present invention.

The present invention is capable of various modifications and various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art. Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art and shall not be construed in ideal or excessively formal meanings unless expressly defined in this application. Do not.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Example

1 is a cross-sectional view showing an optical device according to a preferred embodiment of the present invention.

Referring to FIG. 1, a gate electrode 110 is formed on a substrate 100, and a gate dielectric layer 120 is provided on the gate electrode 110. In addition, the channel region 130 is disposed on the gate dielectric layer 120, and the surface plasmon layer 140 is disposed on the channel region 130. The source electrode 150 and the drain electrode 160 are disposed on both sides of the channel region 130 including the surface plasmon layer 140 and on the gate dielectric layer 120.

In particular, the surface plasmon layer 140 is composed of metal nanoparticles to generate a surface plasmon phenomenon. Surface plasmon phenomenon is explained by the following mechanism.

That is, a large number of free electrons exist inside the metal, which is a conductor. Since free electrons are not bound to metal atoms, they are likely to respond to specific external stimuli. In particular, when the metal has a nano size, the surface plasmon properties appear by the behavior of free electrons, and has a unique optical properties. The resonance phenomenon caused by the surface plasmon is a phenomenon in which free electrons on the metal surface vibrate collectively due to resonance of an electromagnetic field of a specific energy when light enters between the surface of the metal nanoparticle as a conductor and a dielectric. Therefore, the metal nanoparticles in which the surface plasmon is generated resonate strongly with light of various wavelengths according to the type, shape and size of the metal, and amplify the absorption or scattering of light. In addition, strong charge transfer and energy transfer phenomena occur internally for absorption of incident light and amplification of scattering.

In FIG. 1, a surface plasmon layer 140 made of metal nanoparticles is provided on a channel region 130, which is a semiconductor material, and optical absorption is amplified in a thin film by surface plasmons in the surface plasmon layer 140. Improve photoreaction characteristics.

In FIG. 1, the substrate 100 may be formed of any material capable of forming the gate electrode 110, the gate dielectric layer 120, or the like. In particular, when the gate electrode 110 is formed under a specific temperature and pressure condition, it may be possible as long as the material may be provided to enable the formation of the gate electrode 110.

The gate electrode 110 may be any conductive material. Thus, it can be made of metal. In addition, the gate electrode 110 may be a semiconductor material doped with a specific conductivity type. For example, it may be silicon doped with n-type.

The gate dielectric layer 120 is formed on the gate electrode 110. The gate dielectric layer 120 may be made of any insulating material as long as it is a material capable of causing polarization by a voltage applied from the gate electrode 110. For example, silicon oxide may be used as the gate dielectric layer 120.

The channel region 130 has a semiconductor characteristic. For example, the channel region 130 may be indium-gallium-zinc-oxide (IGZO), which is a transparent semiconductor. In particular, the channel region 130 may be any material that absorbs incident light and converts the incident light into current.

In addition, the surface plasmon layer 140 formed on the channel region 130 may be applied in the form of metal nanoparticles or may be formed inside the channel region 130. When applied on channel region 130, surface plasmon layer 140 may be formed by chemical vapor deposition, atomic layer deposition, or physical vapor deposition. In addition to the pre-formed metal nanoparticles are added to the solvent, dispersed, the surface plasmon layer 140 may be formed by a spin coating method.

The source electrode 150 and the drain electrode 160 are formed on the side of the channel region 130 and the upper portion of the gate dielectric layer 120. The source electrode 150 and the drain electrode 160 may be made of Ti / Au as a conductive material. In addition, the source electrode 150 and the drain electrode 160 may have other connection aspects as long as the source electrode 150 and the drain electrode 160 are electrically connected to the channel region 160. That is, the source electrode 150 and the drain electrode 160 may be connected only to the side surface of the channel region 130, and may be provided in the form of a pad on the channel region 130.

In particular, it is preferable that the source electrode 150 and the drain electrode 160 have arrangements facing each other with respect to the surface plasmon layer 140.

2 is a graph showing the absorbance of an optical device according to a preferred embodiment of the present invention.

Referring to FIG. 2, glass is used as the substrate 100 in the optical device shown in FIG. 1. In addition, the n-type doped silicon gate electrode 110 is formed on the glass.

A gate dielectric layer 120 is formed on the n-type silicon, which is the gate electrode 110, and the gate dielectric layer is made of silicon oxide having a thickness of 10 nm. In addition, the channel region 130 is formed of IGZO having a thickness of 50 nm. A source electrode 150 and a drain electrode 160 made of Ti / Au are formed on the upper side of the IGZO, and silver nanoparticles are formed in the region opened by the upper and source electrodes 150 and the drain electrode 160 of the IGZO. The coated surface plasmon layer 140 is provided. Silver nanoparticles are formed by sputtering and run for 14 seconds at a power of 10 watts.

IGZO has a bandgap of about 3.2 eV. Therefore, it shows high absorbance at a wavelength of 380 nm or less. In FIG. 2, when only the IGZO is formed and the surface plasmon layer 140 is not introduced, the absorbance in the wavelength band exceeding 380 nm is insignificant.

However, when the surface plasmon layer 140 of the silver nanoparticle material is provided on the IGZO, it can be seen that the absorbance is increased by 60% at 500 nm. This means that resonance phenomena occur due to surface plasmon phenomena in a specific wavelength band, and photon energy is absorbed into IGZO by amplification of energy.

3 is a graph showing the voltage-current characteristics of the optical device according to an embodiment of the present invention.

Referring to FIG. 3, the drain-source voltage Vds is applied to the optical device of FIG. 2, and the drain-source current Ids is measured while changing the gate voltage Vg. The Vds is fixed at 5V.

First, in the dark state where no light is irradiated and the surface plasmon layer 140 is not formed on the IGZO, the Ids increases at Vg of 0V, but the Ids at Vg of 0V is only a few pA. . The graph showing the trend of Ids with increasing Vg is indicated by ■.

In addition, the characteristic graph of Vg-Ids at the time of irradiating the laser which has only IGZO and does not form the surface plasmon layer 140, and is equipped with only IGZO and has a wavelength band of 480 nm is represented by (circle). When the laser is irradiated to the IGZO, the IGZO constituting the channel region 130 absorbs light to form a photocurrent corresponding to the energy of the absorbed light. Therefore, it has a high Ids value compared with a cancer state.

In addition, when the surface plasmon layer 140 of the silver nanoparticles is formed on the IGZO, it can be seen that it has a higher Ids value than the case where the surface plasmon layer 140 is not formed for the application of the same gate voltage Vg. Its characteristic graph is marked with a.

When the surface plasmon layer 140 is formed, the laser is irradiated with a wavelength band of 480 nm in the same manner as the characteristic graph indicated by ●. In addition, it can be seen that there is an effect of increasing Ids by about 10 to 100 times compared to the case where the surface plasmon layer 140 is not present. This means that the light absorption is further increased by the plasmon phenomenon of the IGZO and the silver nanoparticles forming the channel region 130, thereby improving current conversion of the light energy.

4 is a band diagram of an optical device according to a preferred embodiment of the present invention.

Referring to FIG. 4, a fine Schottky barrier is formed between the n-type channel region and the surface plasmon layer. This Schottky barrier is formed at the surface end of the channel region, which is a semiconductor structure. This is due to the state where the surface of the channel region has surface energy due to different effects from covalent bonds that are not fully bonded. Therefore, the energy band has a sharp discontinuity between the channel region of the semiconductor material and the surface plasmon layer.

Free electrons in the surface plasmon layer formed of metal nanoparticles by the surface plasmon phenomenon move over the Schottky barrier to the conduction band of the channel region. Therefore, separate free electrons are formed in the channel region under the surface plasmon layer.

5 is a schematic diagram of an optical device for explaining the operation of the band diagram shown in FIG. 4 according to a preferred embodiment of the present invention.

Referring to FIG. 5, when a bias is applied to the gate electrode 110, an electron channel is formed at a portion of the channel region 130 adjacent to the gate dielectric layer 120. This is due to the application of bias and the polarization of the gate dielectric film 120, which indicates the formation of a normal first channel 131 by a carrier in a conventional transistor.

In addition, when light is incident, a second channel 132 is formed on the upper portion of the channel region 130 in contact with the surface plasmon layer 140 by resonance due to the surface plasmon phenomenon.

If the light is not incident on the optical device, the surface plasmon phenomenon does not occur, and the second channel 132 is not formed on the channel region 130 adjacent to the surface plasmon layer 140. Therefore, even when a bias is applied to the gate electrode 110, only the current generated by the first channel 131 is generated.

Therefore, the optical device according to the present invention changes the formation of the channel depending on whether light is incident. As a result, a difference occurs in the amount of current flowing through the channel region of the optical device, and the external circuit detects this to check whether light is incident and the amount of incident light.

In addition, the surface plasmon layer in the present invention may be formed inside the channel region. That is, conductive nanoparticles may be formed in the channel through ion implantation, and may be used as a surface plasmon layer.

In the present invention, a separate channel is formed by the surface plasmon phenomenon of the channel region and the surface plasmon layer irrespective of the bias applied to the gate electrode. Through this, the difference in the current flowing through the channel can be detected according to whether light is incident, and light detection or switching operation by light becomes possible.

100 substrate 110 gate electrode
120: gate dielectric layer 130: channel region
140: surface plasmon layer 150: source electrode
160: drain electrode

Claims (8)

A gate electrode formed on the substrate;
A gate dielectric layer formed on the gate electrode;
A channel region formed on the gate dielectric layer;
A surface plasmon layer formed on the channel region and composed of metal nanoparticles to generate an energy transfer phenomenon by collective vibration of free electrons for incident light, and to transfer the generated energy to the channel region;
A source electrode formed on one side of the surface plasmon layer and electrically connected to the channel region; And
And a drain electrode facing the source electrode with respect to the surface plasmon layer. The optical device of claim 1, wherein the channel region comprises IGZO. The optical device of claim 1, wherein the surface plasmon layer comprises silver nanoparticles. The method of claim 1, wherein the channel region,
A first channel formed under the channel region adjacent to the gate dielectric layer; And
And a second channel formed on top of said channel region adjacent said surface plasmon layer. The optical device of claim 4, wherein the first channel is formed by a bias applied to the gate electrode, and the second channel is formed by the incident light. 5. The device of claim 4, wherein the second channel is formed by free electrons in the surface plasmon layer moving to the conduction band of the channel region. A gate electrode formed on the substrate;
A gate dielectric layer formed on the gate electrode;
A channel region formed on the gate dielectric layer and forming two channels by bias and incident light applied from the gate electrode;
A surface plasmon layer formed on the channel region and generating an energy transfer phenomenon according to a surface plasmon phenomenon due to the incident light, and transferring the generated energy to the channel region;
A source electrode formed on one side of the surface plasmon layer and electrically connected to the channel region; And
And a drain electrode facing the source electrode with respect to the surface plasmon layer. The method of claim 7, wherein the two channels,
A first channel formed by a bias applied from the gate electrode; And
And a second channel formed by energy delivered from the surface plasmon layer by the incident light.
KR1020110078021A 2011-08-05 2011-08-05 Photonic Device of using Surface Plasmon KR101293443B1 (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101529660B1 (en) * 2013-08-20 2015-06-22 한국과학기술연구원 Photodetector using surface plasmon resonance and image senosr having thereof
US9564588B2 (en) 2013-11-19 2017-02-07 Samsung Electronics Co., Ltd. Device for detecting surface plasmon and polarization by using topological insulator, method of manufacturing the device, and method of detecting surface plasmon and polarization
KR20180022098A (en) * 2016-08-23 2018-03-06 삼성전자주식회사 Triboelectric generator using surface plasmon resonance
KR20200130927A (en) * 2019-05-13 2020-11-23 한양대학교 산학협력단 Phototransistor and fabricating method of the same
KR20210055206A (en) * 2019-11-07 2021-05-17 성균관대학교산학협력단 Photo detecting device, method of manufacturing the photo detecting device, and method of detecting light using the photo detecting device
KR20210136452A (en) * 2020-05-07 2021-11-17 광운대학교 산학협력단 Substrate for photodetector comprising AgAu alloy nanoparticles and UV photodetector based on GaN using the same

Family Cites Families (4)

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Publication number Priority date Publication date Assignee Title
JP4168531B2 (en) 1999-05-27 2008-10-22 株式会社デンソー High electron mobility phototransistor
WO2005098966A1 (en) 2004-04-05 2005-10-20 Nec Corporation Photodiode and method for manufacturing same
US7705415B1 (en) * 2004-08-12 2010-04-27 Drexel University Optical and electronic devices based on nano-plasma
JP5441643B2 (en) 2009-12-01 2014-03-12 富士フイルム株式会社 Photosensor, photosensor array, photosensor driving method, and photosensor array driving method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101529660B1 (en) * 2013-08-20 2015-06-22 한국과학기술연구원 Photodetector using surface plasmon resonance and image senosr having thereof
US9240511B2 (en) 2013-08-20 2016-01-19 Korea Institute Of Science And Technology Photodetector using surface plasmon resonance and image sensor having the same
US9564588B2 (en) 2013-11-19 2017-02-07 Samsung Electronics Co., Ltd. Device for detecting surface plasmon and polarization by using topological insulator, method of manufacturing the device, and method of detecting surface plasmon and polarization
KR20180022098A (en) * 2016-08-23 2018-03-06 삼성전자주식회사 Triboelectric generator using surface plasmon resonance
KR20200130927A (en) * 2019-05-13 2020-11-23 한양대학교 산학협력단 Phototransistor and fabricating method of the same
KR20210055206A (en) * 2019-11-07 2021-05-17 성균관대학교산학협력단 Photo detecting device, method of manufacturing the photo detecting device, and method of detecting light using the photo detecting device
KR20210136452A (en) * 2020-05-07 2021-11-17 광운대학교 산학협력단 Substrate for photodetector comprising AgAu alloy nanoparticles and UV photodetector based on GaN using the same

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