KR20130014222A - 3d image sensor and electronic system including the same - Google Patents

Abstract

PURPOSE: A 3D image sensor and an electronic system including the same are provided to improve performance by vertically laminating a color filter and an organic photoconductive conversion layer for sensing depth information. CONSTITUTION: A unit pixel(100) includes a color filter(150) and an infrared sensing part. The color filter selectively absorbs visible light and converts the light into electricity. A readout circuit reads out the image information sensed from a pixel array. An infrared sensing part includes a first electrode(141), a second electrode(142), and an organic photoconductive conversion layer(130). The organic photoconductive conversion layer is formed between the first electrode and the second electrode. The visible light passes through the organic photoconductive conversion layer, and infrared light is selectively absorbed for photoelectric conversion.

Description

3D image sensor and electronic system including the same {3D IMAGE SENSOR AND ELECTRONIC SYSTEM INCLUDING THE SAME}

The present invention relates to a method of manufacturing an image sensor and an image sensor manufactured by the present invention, and more particularly, to a method of manufacturing a three-dimensional image sensor that implements a depth sensor and a color sensor, and a three-dimensional image sensor manufactured thereby. .

An image sensor is an element that converts an optical image into an electrical signal. Recently, with the development of the computer industry and the communication industry, the demand for improved image sensors in various fields such as digital cameras, camcorders, PCS (personal communication systems), gaming devices, security cameras, medical micro cameras, robots, etc. is increasing. .

The image sensor includes a pixel array in which a plurality of unit pixels are arranged, and a read-out circuit for reading out image information sensed by the pixel array. The unit pixel, in particular, the depth pixel for the three-dimensional image is added to the control line of the high frequency operation, it is difficult to place the color pixel on the same plane (plane). In addition, even if the color pixels and depth pixels are arranged on the same plane, there is a problem that it is difficult to optimize each characteristic.

SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a three-dimensional image sensor capable of implementing a depth sensor and a color sensor on a single chip, and a three-dimensional image sensor manufactured thereby.

In order to solve the above technical problem, a three-dimensional image sensor according to an embodiment of the present invention includes a color filter for selectively absorbing light in the visible light wavelength band photoelectric conversion; And a pixel array including a plurality of unit pixels including an infrared sensing unit disposed perpendicular to the color filter. And an access circuit for accessing the pixel array, wherein the infrared sensing unit transmits light in the visible wavelength band and is spaced apart from each other; And an organic photoelectric conversion film formed between the first electrode and the second electrode to transmit light in a visible wavelength band and selectively absorb and absorb light in an infrared wavelength band.

The first electrode is formed of a transparent oxide or a transparent metal thin film under the organic photoelectric conversion film, and the second electrode is formed of the transparent oxide and formed on the organic photoelectric conversion film.

The infrared sensing unit may further include insulating layers formed between the first and second electrodes and the organic photoelectric conversion layer, respectively.

The color filters may be stacked on the infrared sensing unit.

Alternatively, the color filters may be stacked below the infrared sensing unit.

The organic photoelectric conversion film includes a P-type organic material layer formed on the first electrode and an N-type organic material layer formed on the P-type organic material layer, wherein the P-type organic material layer and the N-type organic material The material layer may form a PN junction.

In order to solve the above technical problem, a three-dimensional image sensor according to another embodiment of the present invention comprises a single semiconductor substrate; A photodiode region formed on the semiconductor substrate; An intermediate insulating layer formed over the photodiode region; A metal line formed in the intermediate insulating layer; An infrared sensing unit formed on the intermediate insulating layer; And a color filter which is formed by being stacked in the vertical direction in the infrared sensing unit and selectively absorbs light in a visible wavelength band and photoelectrically converts the light.

The infrared sensing unit is a transparent oxide, the first and second electrodes provided spaced apart from each other; And an organic photoelectric conversion film formed between the first electrode and the second electrode to transmit light in a visible wavelength band and selectively absorb and absorb light in an infrared wavelength band.

The infrared sensing unit may further include insulating layers formed between the first and second electrodes and the organic photoelectric conversion layer, respectively.

The color filters may be stacked on the infrared sensing unit.

Alternatively, the color filters may be stacked below the infrared sensing unit.

The organic photoelectric conversion film includes a P-type organic material layer formed on the first electrode and an N-type organic material layer formed on the P-type organic material layer, wherein the P-type organic material layer and the N-type organic material The material layer may form a PN junction.

According to an embodiment of the present invention, a three-dimensional image sensor, a manufacturing method thereof, and an electronic system including the same include stacking a color filter and an organic photoelectric conversion layer sensing depth information in a vertical direction, thereby reducing the area of the sensor to one chip. This has the effect of improving performance.

BRIEF DESCRIPTION OF THE DRAWINGS In order to better understand the drawings cited in the detailed description of the invention, a brief description of each drawing is provided.
1 is a block diagram of a three-dimensional image sensor according to an embodiment of the present invention.
2A to 2D are detailed circuit diagrams illustrating examples of various unit pixels.
3 is a cross-sectional view of a unit pixel included in the 3D image sensor shown in FIG. 1.
4 is a cross-sectional view of a unit pixel according to another exemplary embodiment of the 3D image sensor illustrated in FIG. 3.
5 is a cross-sectional view of a unit pixel included in the 3D image sensor shown in FIG. 1 according to another embodiment.
6 is a cross-sectional view of a unit pixel according to another exemplary embodiment of the 3D image sensor illustrated in FIG. 5.
FIG. 7 is a cross-sectional view of a unit pixel according to another exemplary embodiment of the 3D image sensor illustrated in FIG. 3.
8 is a block diagram of an electronic device according to an embodiment of the present invention.
9 illustrates an electronic system and interface including a three-dimensional image sensor according to an embodiment of the present invention.

Specific structural and functional descriptions of embodiments of the present invention disclosed herein are illustrated for purposes of illustrating embodiments of the inventive concept only, And can be embodied in various forms and should not be construed as limited to the embodiments set forth herein.

The embodiments according to the concept of the present invention can make various changes and have various forms, so that specific embodiments are illustrated in the drawings and described in detail herein. It is to be understood, however, that it is not intended to limit the embodiments according to the concepts of the present invention to the particular forms of disclosure, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.

Terms such as first and / or second may be used to describe various components, but the components should not be limited by the terms. The terms are intended to distinguish one element from another, for example, without departing from the scope of the invention in accordance with the concepts of the present invention, the first element may be termed the second element, The second component may also be referred to as a first component.

When a component is referred to as being "connected" or "connected" to another component, it may be directly connected to or connected to that other component, but it may be understood that other components may be present in between. Should be. On the other hand, when an element is referred to as being "directly connected" or "directly connected" to another element, it should be understood that there are no other elements in between. Other expressions describing the relationship between components, such as "between" and "immediately between," or "neighboring to," and "directly neighboring to" should be interpreted as well.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, the terms "comprises ", or" having ", or the like, specify that there is a stated feature, number, step, operation, , Steps, operations, components, parts, or combinations thereof, as a matter of principle.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art. Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art, and are not construed in ideal or excessively formal meanings unless expressly defined herein. Do not.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail with reference to the preferred embodiments of the present invention with reference to the accompanying drawings.

1 is a block diagram of a three-dimensional image sensor according to an embodiment of the present invention.

Referring to FIG. 1, the 3D image sensor 10 may measure a distance by using a time of flight (TOF) principle. The 3D image sensor 10 includes a semiconductor integrated circuit 20, a light source 32, and a lens module 34.

The semiconductor integrated circuit 20 includes a pixel array 40 in which a plurality of unit pixels 100 are arranged and a read-out circuit 50, wherein the read-out circuit 50 is the pixel. To read out image information sensed in an array, the row decoder 24 includes a row decoder 24, a light source driver 30, a timing controller 26, a photo gate controller 28, and a logic circuit 36.

The pixel array 40 includes a plurality of unit pixels 100. For convenience of explanation, the unit pixel 100 will be described later.

The row decoder 24 selects any one of the plurality of rows in response to a row address output from the timing controller 26. Here, the row refers to a set of a plurality of depth pixels arranged in the X-direction in the pixel array 40.

The photo gate controller 28 may generate a plurality of photo gate control signals and supply them to the pixel array 40 under the control of the timing controller 26.

The light source driver 30 may generate a clock signal MLS capable of driving the light source 32 under the control of the timing controller 26.

The light source 32 emits a modulated optical signal to the target object 1 in response to the clock signal MLS. As the light source 32, a light emitting diode (LED), an organic light-emitting diode (OLED), or a laser diode may be used. The modulated optical signal may be a sine wave or a square file.

The light source driver 30 supplies the clock signal MLS or the information about the clock signal MLS to the photo gate controller 28.

The logic circuit 36 processes signals sensed by the plurality of unit pixels 100 implemented in the pixel array 40 under the control of the timing controller 26 and processes the processed signals into a processor (not shown). Can be printed as The processor may calculate a distance based on the processed signals. When the 3D image sensor 10 includes the processor, the 3D image sensor 10 may be a distance measuring device.

According to an embodiment, the 3D image sensor 10 and the processor (not shown) may be implemented as separate chips.

According to an embodiment, the logic circuit 36 may include an analog-to-digital conversion block (not shown) capable of converting sensing signals output from the pixel array 40 into digital signals. The logic circuit 36 may further include a CDS block (not shown) for performing correlated double sampling (CDS) on the digital signals output from the analog-digital conversion block.

According to another embodiment, the logic circuit 36 may include a CDS block for performing a CDS on sensing signals output from the pixel array 40, and an analog for converting the signals CDS by the CDS block into digital signals. May comprise a digital conversion block.

In addition, the logic circuit 36 may further include a column decoder for outputting the output signals of the analog-to-digital conversion block or the CDS block to the processor under the control of the timing controller 26.

The reflected optical signals are incident to the pixel array 40 through the lens module 34.

The three-dimensional image sensor 10 includes a plurality of light sources arranged in a circle around the lens module 34, but only one light source 32 is shown for convenience of description.

The optical signals incident on the pixel array 40 through the lens module 34 may be demodulated by the plurality of unit pixels 100. That is, the optical signals incident on the pixel array 40 through the lens module 34 may form an image.

2A to 2D are detailed circuit diagrams illustrating examples of various unit pixels.

Referring to FIG. 2A, the unit pixel 100a includes a photodiode PD, a transfer transistor Tx, a sensing node FD, a reset transistor Rx, a drive transistor Dx, and a select transistor Sx. ).

Here, the photodiode PD may include at least one of a photo transistor, a photo gate, a pinned photo diode (PPD), and a combination thereof.

Although FIG. 2A illustrates a unit pixel having a 4T structure including one photodiode PD and four MOS transistors Tx, Rx, Dx, and Sx, an embodiment according to the present invention is not limited thereto. In an embodiment, the present invention may be applied to at least three transistors including the drive transistor Dx and the select transistor Sx and all circuits including the photodiode PD.

Another embodiment of a unit pixel is shown in FIGS. 2B-2D.

The unit pixel 100b illustrated in FIG. 2B is a unit pixel having a three-transistor 3T structure, and includes a photodiode PD, a reset transistor Rx, a drive transistor Dx, and a select transistor Sx. do.

The unit pixel 100c illustrated in FIG. 2C is a unit pixel having a 5-transistor 5T structure and includes a photodiode PD, a reset transistor Rx, a drive transistor Dx, and a select transistor Sx. In addition, it further includes one transistor (Gx).

The unit pixel 100d illustrated in FIG. 2D is a 5-transistor unit pixel, and includes a photodiode PD, a reset transistor Rx, a drive transistor Dx, and a select transistor Sx. Further includes P transistors.

1 to 2D, the 3D image sensor 10 converts an optical signal into an electrical signal and outputs the electrical signal. The timing controller 26 controls the operation timing of the three-dimensional image sensor 10. For example, the timing controller 26 may control the condensing time through the transfer gate (TG) control signal of the 3D image sensor 10.

3 is a cross-sectional view of a unit pixel included in the 3D image sensor illustrated in FIG. 1, and FIG. 4 is a cross-sectional view of a unit pixel according to another embodiment of the 3D image sensor illustrated in FIG. 3.

Referring to FIG. 3, a single semiconductor substrate 110 in which a pixel region in which an active pixel sensor array is to be formed is defined is provided. Although not shown, a pad region, which is a region where a metal pad to be connected to an external signal, is to be formed, is further included.

The semiconductor substrate 110 may include a semiconductor substrate, a silicon on insulator (SOI) substrate, a gallium arsenide (GaAs) substrate, a silicon germanium (SiGe) substrate, a ceramic substrate, a quartz substrate, or a glass substrate for a display. In addition, a semiconductor substrate mainly uses a P-type substrate, and although not shown in the drawing, a multilayer structure in which a P-type epitaxial layer is grown may be used.

The active pixel sensor array formed in the pixel region 40 includes a plurality of unit pixels arranged in two dimensions, and each unit pixel may have a structure of FIGS. 2A to 2D. In the embodiment of the present invention, the photodiode 117 is described using a pinned photodiode (PPD), but is not limited thereto.

The photodiode 117 is formed in the semiconductor substrate 110. The photodiode 117 accumulates charges generated corresponding to incident light of each wavelength. That is, electrons are generated in proportion to the amount of light sensed. When the transfer gate TG is turned off, the electrons are constrained to the photodiode 117 by the gate barrier, and the transfer gate is turned on. When turned on, it is transmitted to the charge detector through the channel region formed at the bottom of the transfer gate. The maximum impurity concentration of the photodiode 117 may be ¹ × ^{10 17} to 1 × 10 ¹⁸ atoms / cm ³ . However, the concentration and position to be doped may vary depending on the manufacturing process and the design, so that the present invention is not limited thereto.

An intermediate insulating layer 120 may be formed on the photodiode 117 to cover the entire surface of the semiconductor substrate 110 and fill an empty space in which the transistors are not formed. The intermediate insulating film may be, for example, a silicon oxide film (SiO ₂ ).

The color filter 150 is formed on the intermediate insulating layer 120. The color filter 150 selectively absorbs light of a wavelength band of a specific color and converts the light into an electrical signal. The blue filter selectively absorbs the blue region wavelength, the green filter the green region wavelength, and the red filter selectively absorbs the red region wavelength. The arrangement of the color filter 150 may be variously modified.

An infrared sensing unit including the first electrode 142, the organic photoelectric conversion layer 131, and the second electrode 141 may be formed on the color filter 150. The color filter 150 is implemented by being stacked in the vertical direction above or below the infrared sensing unit.

The infrared sensing unit includes a first electrode 141, a second electrode 142, and an organic photoelectric conversion layer 130. The first electrode 142 and the second electrode 141 are stacked in a vertical direction with the color filter 150, and the organic photoelectric conversion film 130 is disposed between the first electrode 142 and the second electrode 141. ) Is formed.

The first and second electrodes 142 and 141 may be formed of a transparent conductive material. In this case, the work function of the first electrode 141 has a larger value than the work function of the second electrode 142. The first electrode 142 and the second electrode 141 are ITO, IZO, ZnO, SnO ₂ , antimony-doped tin oxide (ATO), Al-doped zine oxide (AZO), gallium-doped zinc oxide (GZO), It may be a transparent oxide electrode formed of at least one oxide selected from the group consisting of TiO ₂ and fluorine-doped tin oxide (FTO). The first electrode 142 may be a metal thin film formed of at least one metal selected from the group consisting of Al, Cu, Ti, Au, Pt, Ag, and Cr. When the first electrode 142 is formed of a metal, it may be formed to a thickness of 20 nm or less in order to secure transparency.

The organic photoelectric conversion layer 130 may be made of an infrared selective absorbing material that absorbs infrared rays from incident light. The infrared selective absorbing material may be an organic material such as an organic pigment, for example, phthalocyanine-based, naphthoquinone-based, naphthalocyanine-based, pyrrole-based, polymer condensed azo-based, metal complex organic pigment, anthraquinone-based, cyanine System, and mixtures or complexes thereof. In addition, it may be used in combination with an inorganic material such as antimony. In order to ensure transparency, nano-sized fine particles can be used.

As a result, when the unit pixel 100 receives the reflected light, the light in the infrared region is electrically charged in the organic photoelectric conversion film 130 through IR-modulation between the first electrode 142 and the second electrode 141. The photoelectric conversion is performed by the conventional signal and sensed as depth information along the metal line 106. Depth information is sensed by photoelectric conversion of light in the absorbed infrared wavelength band, and is output as three-dimensional image information through the connection node 115 and the first lead-out circuit 170.

Light in the visible region passes through the first and second electrodes 142 and 141 and the organic photoelectric conversion layer 130, and the light of the specific wavelength region of the color filter 150 (for example, among R, G, and B). Only one) is transmitted and absorbed by the photodiode 117. The color information is sensed by photoelectric conversion of the light of the specific wavelength band absorbed by the photodiode 117 and output as 3D image information through the second lead-out circuit 172.

According to another embodiment, shown in FIG. 4, the unit pixel 100 ′ may include first and second insulating layers 143 and 144 between the organic photoelectric conversion layer 130 and the first and second electrodes 142 and 141. ) May be further included.

The first and second insulating layers 143 and 144 may block interference of other energy (for example, dark current caused by electrons generated at the surface) formed outside the organic photoelectric conversion layer 130. It can be formed by adjusting the slope of the potential barrier higher than the organic photoelectric conversion film 130.

FIG. 5 is a cross-sectional view of a unit pixel included in the 3D image sensor shown in FIG. 1 according to another embodiment, and FIG. 6 is a view of the unit pixel according to another embodiment of the 3D image sensor shown in FIG. 5. It is a cross section. For convenience of explanation, the differences from FIGS. 3 and 4 will be mainly described.

In the unit pixel 200 illustrated in FIG. 5, unlike the unit pixels 100 and 101 of FIG. 3 or 4, the color filter 152 is formed on the second electrode 141.

When incident light comes in, first, the color filter 152 selectively absorbs and detects light in a visible wavelength band, and transmits light in an unselected wavelength band. Of the transmitted light, the organic photoelectric conversion film 130 selectively absorbs light in the infrared wavelength band, and transmits light in the remaining wavelength band. Depth information is sensed by the method of photoelectric conversion of the light of the infrared wavelength band absorbed by the organic photoelectric conversion film 130, the connection node 115 and the first lead-out circuit 170 through the three-dimensional image information Is output.

Light in the visible light region selected by the color filter 152 is absorbed by the photodiode 117. The color information is sensed by photoelectric conversion of the light of the specific wavelength band absorbed by the photodiode 117 and output as 3D image information through the second lead-out circuit 172.

 The unit pixel 200 ′ shown in FIG. 6 further includes first and second insulating layers 143 and 144 between the first and second electrodes 142 and 141 and the organic photoelectric conversion layer 130.

The first and second insulating layers 143 and 144 may block interference of other energy (for example, dark current caused by electrons generated at the surface) formed outside the organic photoelectric conversion layer 130. It can be formed by adjusting the slope of the potential barrier higher than the organic photoelectric conversion film 130.

On the other hand, the organic photoelectric conversion film 130 described with reference to FIGS. 4 to 6 according to another embodiment, the organic photoelectric conversion film 130 is a P-type organic material layer and a N-type organic material layer having a PN junction structure It may include. The P type organic material layer is formed under the second electrode 141, and the N type organic material layer is formed under the P type organic material layer.

The P-type organic material layer may be made of a semiconductor material in which holes are a plurality of carriers, and is not particularly limited as long as it is a material capable of absorbing a desired wavelength band. The N-type organic material layer may be formed of a semiconductor organic material in which electrons become a plurality of carriers, for example, C ₆₀ (Fullerence Carbon). In addition, at least one of the P-type organic material layer and the N-type organic material layer may be formed of a material that selectively absorbs the wavelength of the infrared region. That is, photoelectric conversion is possible through the PN junction, and infrared (IR) light can be converted into a current.

In the organic photoelectric conversion layer 130 illustrated in FIGS. 4 to 6, the PN junction or the PIN junction has a single layer structure, but is not limited thereto. The wavelength band of light to be absorbed by forming a multilayer may be more flexibly expanded. have.

The unit pixels of FIGS. 4 to 6 are not limited to the front light receiving image sensor FSI, and may be naturally applied to the back light receiving image sensor BSI according to an embodiment.

FIG. 7 is a cross-sectional view of a unit pixel according to another exemplary embodiment of the 3D image sensor illustrated in FIG. 3.

In the exemplary embodiment of the unit pixel of FIGS. 4 to 6, a three-dimensional image may be output to one readout circuit 174 according to a design, such as the unit pixel 100 ″ illustrated in FIG. 7. It may be possible.

8 is a block diagram of an electronic device according to an embodiment of the present invention.

The electronic device 300 illustrated in FIG. 8 includes all electronic devices including a digital camera, a mobile phone with a digital camera, or a digital camera. The electronic device 300 may process 2D image information or 3D image information. The electronic device 300 includes a three-dimensional image sensor 10 according to an embodiment of the present invention.

The electronic device 300 may include an image signal processor 320 for controlling the operation of the sensor.

The electronic device 300 may further include an interface 330. The interface 330 may be an image display device. In addition, the interface 330 may be an input / output device.

Accordingly, the image display device may include a memory device 350 that may store a still image or a moving image captured by the depth sensor under the control of the image signal processor 320. The memory device 350 may be implemented as a nonvolatile memory device. The nonvolatile memory device may include a plurality of nonvolatile memory cells.

Each of the nonvolatile memory cells includes an electrically erasable programmable read-only memory (EEPROM), a flash memory, a magnetic RAM (MRAM), a spin-transfer torque MRAM (CRAM), a conductive bridging RAM (CBRAM), and a ferroelectric RAM (FeRAM). ), Phase Change RAM (PRAM), also known as OUM (Ovonic Unified Memory), Resistive RAM (RRAM or ReRAM), Nanotube RRAM, Polymer RAM (PoRAM), Nano floating gate memory ( Nano Floating Gate Memory (NFGM), holographic memory, holographic memory, Molecular Electronics Memory Device, or Insulator Resistance Change Memory.

9 illustrates an electronic system and interface including a three-dimensional image sensor according to an embodiment of the present invention.

Referring to FIG. 9, the electronic system 1000 may be implemented as a data processing device capable of using or supporting a MIPI interface, such as a mobile phone, a PDA, a PMP, an IPTV, or a smart phone.

The electronic system 1000 includes an application processor 1010, an image sensor 1040, and a display 1050.

The CSI host 1012 implemented in the application processor 1010 may serially communicate with the CSI device 1041 of the image sensor 1040 through a camera serial interface (CSI). In this case, for example, an optical deserializer may be implemented in the CSI host 1012, and an optical serializer may be implemented in the CSI device 1041. In this case, the image sensor 1040 may include a depth sensor.

The DSI host 1011 implemented in the application processor 1010 can communicate with the DSI device 1051 of the display 1050 through a display serial interface (DSI). In this case, for example, an optical serializer may be implemented in the DSI host 1011, and an optical deserializer may be implemented in the DSI device 1051.

The electronic system 1000 may further include an RF chip 1060 that can communicate with the application processor 1010. The PHY 1013 of the electronic system 1000 and the PHY 1061 of the RF chip 1060 may exchange data according to the MIPI DigRF.

The electronic system 1000 may further include a GPS 1020, a storage 1070, a microphone 1080, a DRAM 1085, and a speaker 1090, wherein the electronic system 1000 includes a Wimax 1030, a WLAN. 1100 and UWB 1110 may be used for communication.

Although the present invention has been described with reference to one embodiment shown in the drawings, this is merely exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

10: 3D image sensor 20: semiconductor integrated circuit
24: Row Decoder 26: T / C
28: PG CON
30: Light Source Driver 32: Light Source
34: Lens 36: Logic Circuit
40: Pixel Array 50: Readout Circuit
100,100 ', 100 ", 200,200': unit pixel
110: semiconductor substrate 115: connection node
117 photodiode region 120 intermediate insulating layer
170: first lead-out circuit 172: second lead-out circuit
174: third lead-out circuit
160: metal line 130: organic photoelectric conversion film
141: second electrode 142: first electrode
143: first insulating layer 144: second insulating layer
150, 152: color filter
300: electronic device 320: ISP
330: I / F 340: Bus
350: Memory
1000: Electronic System

Claims (10)

A color filter for selectively absorbing light in the visible light wavelength band and photoelectric conversion; And a pixel array including a plurality of unit pixels including an infrared sensing unit disposed perpendicular to the color filter. And
A readout circuit for reading out image information sensed from the pixel array;
The infrared sensing unit
First and second electrodes passing through the visible light wavelength band and spaced apart from each other; And
And an organic photoelectric conversion film formed between the first electrode and the second electrode to transmit light in a visible wavelength band and selectively absorb light in an infrared wavelength band to photoelectrically convert. The method of claim 1,
The first electrode is formed under the organic photoelectric conversion film as a transparent oxide or a transparent metal thin film,
The second electrode is formed of the transparent oxide is formed on the organic photoelectric conversion film on the three-dimensional image sensor. The method of claim 1, wherein the infrared sensing unit
3D image sensor further comprising insulating layers formed between the first and second electrodes and the organic photoelectric conversion film. The method of claim 1, wherein the color filter
3D image sensor is stacked on top of the infrared sensing unit. The method of claim 1, wherein the color filter
3D image sensor is stacked on the lower portion of the infrared sensing unit. The method of claim 1, wherein the organic photoelectric conversion film
A P-type organic material layer formed on the first electrode and an N-type organic material layer formed on the P-type organic material layer, wherein the P-type organic material layer and the N-type organic material layer are PN junctions. Three-dimensional image sensor. The method of claim 6, wherein the organic photoelectric conversion film
At least one of the P-type organic material layer and the N-type organic material layer is a three-dimensional image sensor made of a material that selectively absorbs the wavelength of the infrared region. An electronic system comprising the three-dimensional image sensor of claim 1. A single semiconductor substrate;
A photodiode region formed on the semiconductor substrate;
An intermediate insulating layer formed over the photodiode region;
A metal line formed in the intermediate insulating layer;
An infrared sensing unit formed on the intermediate insulating layer; And
It is formed by stacking in the vertical direction in the infrared sensing unit, and includes a color filter for selectively absorbing the light of the visible wavelength range photoelectric conversion,
The infrared sensing unit
First and second electrodes spaced apart from each other as transparent oxides; And
And an organic photoelectric conversion film formed between the first electrode and the second electrode to transmit light in the visible wavelength band and selectively absorb and absorb light in the infrared wavelength band. The method of claim 9, wherein the infrared sensing unit
3D image sensor further comprising insulating layers formed between the first and second electrodes and the organic photoelectric conversion film.

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