KR20130011648A - Apparatus for graphene etching and method for graphene etching using the same - Google Patents

Apparatus for graphene etching and method for graphene etching using the same Download PDF

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Publication number
KR20130011648A
KR20130011648A KR1020110072953A KR20110072953A KR20130011648A KR 20130011648 A KR20130011648 A KR 20130011648A KR 1020110072953 A KR1020110072953 A KR 1020110072953A KR 20110072953 A KR20110072953 A KR 20110072953A KR 20130011648 A KR20130011648 A KR 20130011648A
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South Korea
Prior art keywords
chamber
graphene
desorption
adsorption
graphene substrate
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KR1020110072953A
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Korean (ko)
Inventor
염근영
임웅선
오종식
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성균관대학교산학협력단
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Priority to KR1020110072953A priority Critical patent/KR20130011648A/en
Publication of KR20130011648A publication Critical patent/KR20130011648A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/28—Moving reactors, e.g. rotary drums
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

PURPOSE: A graphene etching device and a graphene etching method using the same are provided to prevent additional etching by performing discharging without remaining reactive gas. CONSTITUTION: A graphene etching device is composed of a buffer chamber(200), an adsorption chamber(100), and a desorption chamber(300). A graphene substrate(500) is loaded in the buffer chamber. An adsorption process is performed in the adsorption chamber for the graphene substrate. A desorption process is performed in the desorption chamber for the graphene substrate. The buffer chamber is placed between the adsorption chamber and the desorption chamber. The buffer chamber includes a transfer device(210), and the transfer device transfers the graphene substrate to the inside of the adsorption chamber or the desorption chamber. The graphene substrate adsorbed in the adsorption chamber is transferred to the buffer chamber, in standby for a previously set time, and transferred to the desorption chamber. [Reference numerals] (AA) Exhaust

Description

Graphene etching apparatus and graphene etching method using the same {APPARATUS FOR GRAPHENE ETCHING AND METHOD FOR GRAPHENE ETCHING USING THE SAME}

The present invention relates to a graphene etching apparatus and a graphene etching method using the same.

Exfoliation graphene has some excellent physical and electrical properties, and research on this has been actively conducted. However, it is confirmed that the release type graphene is not suitable for commercialization due to the problem that the adjustment and position adjustment of the thin film are impossible.

Recently, attention has been paid to the formation of graphene by chemical vapor deposition (CVD) or PE-CVD. The CVD method has almost the same physical and electrical properties as the exfoliated graphene, and is capable of commercialization because it can be deposited on a wafer scale, and various studies are being conducted.

Meanwhile, in the graphene production process according to the CVD method, in order to manufacture a switching device such as a transistor by using the same, a graphene etching technology capable of forming not only a channel of the device but also a source and a drain region with graphene is required. It is becoming.

Such a device for graphene etching requires an ultra low damage etching technique with very little physical and electrical damage of the device for nanometer scale devices, and an ultra-precision etching technology with atomic level control, and requires a new type of process equipment for this. Do.

The present invention is to solve the above-mentioned problems of the prior art, an embodiment of the present invention is composed of an adsorption chamber, a buffer chamber and a desorption chamber, it is possible to prevent the additional etching by discharging so that the reactive gas does not remain It provides a pin etching device and a graphene etching method using the same.

As a technical means for achieving the above technical problem, an embodiment of the present invention is a buffer chamber in which a graphene substrate is loaded, an adsorption chamber in which an adsorption process is performed on the graphene substrate, and a desorption process on the graphene substrate. Including the desorption chamber is performed, the buffer chamber may provide a graphene etching device that is disposed between the adsorption chamber and the desorption chamber.

In addition, another embodiment of the present invention in the graphene etching method using a graphene etching apparatus including a buffer chamber, adsorption chamber and desorption chamber, (a) loading the graphene substrate into the buffer chamber, (b Transferring the graphene substrate to the adsorption chamber, performing an adsorption process on the graphene substrate, (c) transferring the graphene substrate to the buffer chamber, and waiting for a predetermined time; d) transferring the graphene substrate to the desorption chamber, performing a desorption process on the graphene substrate, and (e) transferring the graphene substrate to the buffer chamber and waiting for a predetermined time period. It can be provided a graphene etching method comprising.

According to the above-described problem solving means of the present invention, the graphene etching apparatus and graphene etching method using the same consisting of the adsorption chamber, the buffer chamber and the desorption chamber, which can prevent the additional etching by discharging so that the reactive gas does not remain to provide.

1 is a view showing a graphene etching apparatus according to an embodiment of the present invention.
2 is a flowchart illustrating a graphene etching process method according to an embodiment of the present invention.
3 is a view for explaining a graphene etching process according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, which will be readily apparent to those skilled in the art. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In the drawings, parts irrelevant to the description are omitted in order to clearly describe the present invention, and like reference numerals designate like parts throughout the specification.

Throughout the specification, when a part is "connected" to another part, this includes not only "directly connected" but also "electrically connected" with another element in between. . In addition, when a part is said to "include" a certain component, which means that it may further include other components, except to exclude other components unless otherwise stated.

1 is a view showing a graphene etching apparatus according to an embodiment of the present invention.

The graphical etching apparatus 10 includes an adsorption chamber 100, a buffer chamber 200, a desorption chamber 300, and an exhaust unit 400.

The adsorption chamber 100 reacts the plasma supplied by the plasma supply unit 110 and the gas supplied by the gas supply unit 120 to the graphene substrate 500 to perform a chemisorption process. For example, oxygen radicals are generated through the plasma supply unit 110 and the gas supply unit 120, and the oxygen radicals change SP2 bonds on the graphene surface to SP3 bonds. Since the SP3 bond is weaker than the SP2 bond, the SP3 bond can be easily detached by energy supply from the detachment chamber 300.

On the other hand, the plasma supply unit 110 may receive RF power from the power supply unit 112, and in order to form oxygen radicals, may serve to supply energy that plasma can generate.

The induction coil 114 is connected between the plasma supply unit 110 and the power supply unit 112.

In addition, the gas supply unit 120 injects a gas for forming a plasma and a gas for adsorbing.

The buffer chamber 200 is a place where the graphene substrate 500 is loaded into the graphene etching apparatus 10, and is a space through which the graphene substrate 500 passes before the adsorption process or the desorption process. That is, after the graphene substrate 500 is initially loaded, the graphene substrate 500 is a space for a while to be kept in the standby state before being transferred to the adsorption chamber 100. Thereafter, after the adsorption process is completed, the air is maintained for a while before being transferred to the desorption chamber 300 so that all remaining adsorption gas is discharged. In addition, after the desorption process in the desorption chamber 300 is completed, the desorption chamber 300 is transferred to the buffer chamber 200 to remove residual etch byproducts.

As such, since the buffer chamber 200 is passed before each process, all residual gases can be discharged, thereby preventing additional etching generated as the reactive gas remains.

In the conventional etching apparatus, a single chamber is used to perform a desorption process while remaining reactive gases used during the adsorption process. Conventional semiconductor materials are not a big problem because the depth of etching is more than a few tens of nanometers, but in the case of graphene, since the etching depth is about 1 or 2 layers (0.7, 1.4 nm), the remaining of the reactive gas chamber is very big problem. May cause. That is, the residual gas reacts with the reactive gas to form a re-reaction on the graphene surface by the energy applied during the desorption process, and the additional etching may inhibit the graphene properties and perform the atomic layer etching process. Do not have. Therefore, in the present invention, the adsorption chamber 100 and the desorption chamber 300 are separated, and a buffer chamber 200 is provided therebetween, so as to minimize re-reaction by the reaction gas.

On the other hand, the buffer chamber 200 is disposed between the adsorption chamber 100 and the desorption chamber 300, it is possible to efficiently transfer the graphene substrate 500. In addition, the buffer chamber 200 may include a transfer device 210 for transferring the graphene substrate 500, which transfers the graphene substrate 500 to the adsorption chamber 100 or the desorption chamber 300. You can.

That is, the transfer device 210 may transfer the graphene substrate 500 on which the adsorption process is performed in the adsorption chamber 100 to the buffer chamber 200, wait for a predetermined time, and then transfer the desorption chamber 300. In addition, the graphene substrate 500 in which the desorption process is performed in the desorption chamber 300 may be transferred to the buffer chamber 200 to wait for a preset time.

In this case, the transfer device 210 may move the graphene substrate 500 to each chamber by using one stage. That is, the transfer device 210 directly moves one stage to transfer the graphene substrate 500 between the adsorption chamber 100 and the buffer chamber 200 or between the buffer chamber 200 and the desorption chamber 300. Can be.

In addition, the transfer device 210 may move the graphene substrate 500 by using a transfer arm, for example, a robot arm, in a stage configured for each chamber. Here, the stage may be fixed to each chamber or may be configured to be movable in the chamber.

The desorption chamber 300 allows the desorption process to be performed on the graphene substrate 500 on which the adsorption process is performed.

In addition, the desorption chamber 300 may perform a desorption process by the energy source 320 with respect to the graphene substrate 500. For example, an argon (Ar) neutron beam supplied through the energy source 320 is irradiated to desorb the SP 3 bonded carbon atom.

The energy source 320 may include at least one of a neutral beam, an ion beam, a laser, a thermal energy, and a plasma energy source.

The exhaust unit 400 discharges the reaction gas of the adsorption chamber 100, the buffer chamber 200, and the desorption chamber 300 to the outside.

The exhaust unit 400 is provided with an exhaust pipe separately for each chamber, and each exhaust pipe may be coupled later and discharged through one discharger.

For example, the exhaust unit 400 discharges gas through the first exhaust pipe 410 with respect to the adsorption chamber 100, and discharges gas through the second exhaust pipe 420 with respect to the buffer chamber 200, The gas is discharged to the desorption chamber 300 through the third exhaust pipe 430. Each exhaust pipe may later be combined and finally discharged through one discharger 440.

In addition, the exhaust unit 400 may not be finally coupled to each of the exhaust pipes 410, 420, and 43, and may be discharged independently of each other.

2 is a flowchart illustrating a graphene etching process method according to an embodiment of the present invention, Figure 3 is a view for explaining the graphene etching process.

First, the graphene substrate 500 is loaded into the buffer chamber 200 of the graphene etching apparatus 10 (S210).

Next, the graphene substrate 500 is transferred to the adsorption chamber 100 (S220), and the adsorption process is performed in the adsorption chamber 100 (S230).

For example, the plasma supplied from the plasma supply unit 110 and the gas supplied from the gas supply unit 120 react with the graphene substrate 500 to cause an adsorption reaction. 3 (a) and 3 (b) show that SP2 bonds on the graphene surface are changed to SP3 bonds according to the injection of oxygen radicals. Since the SP3 bond is weaker than the SP2 bond, the SP3 bond can be easily detached by energy supply from the detachment chamber 300.

Next, the graphene substrate 500 is transferred to the buffer chamber 200 after the type of adsorption process (S240).

As such, before the desorption process is performed, the process of transferring the graphene substrate 500 to the buffer chamber 200 is performed to discharge the adsorbed gas remaining in the graphene substrate 500.

Next, the graphene substrate 500 is transferred to the desorption chamber 300 (S250), and the desorption process is performed in the desorption chamber 300 (S260).

For example, as shown in (c) of FIG. 3, the graphene substrate 500 is irradiated with an argon neutron beam to allow the graphene to be detached. At this time, in the case of the SP3 bond generated in the adsorption process, the bonding strength is weak, it can be desorbed better according to the present process.

Next, the graphene substrate 500 is transferred to the buffer chamber 200 after the type of desorption process (S270). As such, after the desorption process is performed, the process of transferring the graphene substrate 500 to the buffer chamber 200 is performed to discharge the gas remaining in the graphene substrate 500. As a result, re-reaction caused by residual gas can be suppressed, and progress of further etching can be prevented.

The foregoing description of the present invention is intended for illustration, and it will be understood by those skilled in the art that the present invention may be easily modified in other specific forms without changing the technical spirit or essential features of the present invention. will be. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form.

The scope of the present invention is shown by the following claims rather than the above description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention. do.

10: graphical etching apparatus 100: adsorption chamber
110: plasma supply unit 112: power supply unit
114: induction coil 120: gas supply unit
200: buffer chamber 210: transfer device
300: desorption chamber 320: energy source
400: exhaust part 500: graphene substrate

Claims (5)

In graphene etching apparatus,
A buffer chamber into which a graphene substrate is loaded,
An adsorption chamber in which an adsorption process is performed on the graphene substrate;
Including a desorption chamber in which a desorption process is performed with respect to the graphene substrate,
And the buffer chamber is disposed between the adsorption chamber and the desorption chamber.
The method of claim 1,
The buffer chamber,
And a transfer device for transferring the graphene substrate into the adsorption chamber or the desorption chamber.
The method of claim 2,
The transfer device is a graphene etching apparatus for transferring the graphene substrate on which the adsorption process is performed in the adsorption chamber to the buffer chamber to wait for a predetermined time and then to the desorption chamber.
The method of claim 2,
The transfer apparatus is a graphene etching apparatus for transferring a graphene substrate having a desorption process performed in the desorption chamber to the buffer chamber to wait for a predetermined time.
In the graphene etching method using a graphene etching apparatus including a buffer chamber, adsorption chamber and desorption chamber,
(a) loading a graphene substrate into the buffer chamber,
(b) transferring the graphene substrate to the adsorption chamber to perform an adsorption process on the graphene substrate;
(c) transferring the graphene substrate to the buffer chamber and waiting for a predetermined time;
(d) transferring the graphene substrate to the desorption chamber to perform a desorption process on the graphene substrate; and
(e) transferring the graphene substrate to the buffer chamber, and waiting for a preset time.
KR1020110072953A 2011-07-22 2011-07-22 Apparatus for graphene etching and method for graphene etching using the same KR20130011648A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101502556B1 (en) * 2013-09-25 2015-03-16 한국표준과학연구원 Apparatus for etching graphene and etching method using the same of

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101502556B1 (en) * 2013-09-25 2015-03-16 한국표준과학연구원 Apparatus for etching graphene and etching method using the same of

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