KR20130010541A - Active matrix flat panel display device with embedded solar-cell and method for manufacturing the same - Google Patents

Abstract

PURPOSE: An active matrix flat panel display device with an embedded solar-cell and a method for manufacturing the same are provided to reduce the use amount of external power by using the light of a backlight. CONSTITUTION: A pixel part(110) includes a gate electrode(111), an insulator(113), an active layer(115), a source electrode(117) and a drain electrode(119). A substrate(120) supplies power to the pixel part. An insulating film(130) is located between the pixel part and the substrate. A backlight radiates light to the pixel. A solar cell part(140) is located between the insulating film and the substrate. The solar cell part produces power by using the light of the backlight.

Description

ACTIVE MATRIX FLAT PANEL DISPLAY DEVICE WITH EMBEDDED SOLAR-CELL AND METHOD FOR MANUFACTURING THE SAME}

The present invention relates to an active driving flat panel display device having a solar cell and a method of manufacturing the same, and more particularly, to an active driving flat panel display device for producing and supplying power to a thin film transistor using light. It is about.

LCD is typically used for flat panel display, and the LCD is a device that displays the shape formed on the pixel part by using the light emitted from the backlight and the backlight is located on the side or the back. Therefore, power is required to form an image in the pixel portion and to emit light in the backlight.

Conventional LCDs use CCFLs as backlights, but recently, the use of LEDs with low power consumption and long lifespan is increasing. However, even with the LED backlight, the power consumption of the LCD is quite small. In particular, since notebooks and mobile phones consume a small portion of the power consumed by flat panel display devices, efforts to reduce them are still ongoing.

Among them, in the case of Korean Patent No. 10-0750068 (a built-in liquid crystal display device, hereinafter, prior art), a technology for replacing a part of power consumed by a flat panel display device by embedding the cell in the flat panel display device is disclosed. Is disclosed.

1, the insulating film 12 is formed on the substrate 11, and the semiconductor layer 13 is formed thereon. The ohmic contact layer 14 is formed thereon, and the pixel is realized using the thin film transistor 10 having the source electrode 15 and the drain electrode 16 formed on the ohmic contact layer 14.

As shown in FIG. 2, the solar cell unit 20 is formed on the side surface of the thin film transistor 10, and the solar cell unit 20 uses the solar power when the flat panel display device is used or not. To produce. And by storing the generated power in the battery, the external power supply is reduced or the operating time of the device is increased.

However, in the case of the above-described prior art, it is possible to use only when there is light in the day or the surroundings with sunlight, and there is a problem in that the effect by the solar cell unit is hardly seen in the dark state.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and an object of the present invention is to reduce the external power supplied to the flat panel display device or increase the battery life without being affected by the amount of ambient light. And a method for producing the same.

In order to achieve the above object, an active driving flat panel display device having a solar cell according to the present invention includes: a pixel unit including a gate electrode, an insulator, an active layer, a source electrode, and a drain electrode; A substrate supplying power to the pixel portion; An insulating layer disposed between the pixel portion and the substrate to block current; A backlight for emitting light toward the pixel portion; And a solar cell unit positioned between the insulating layer and the substrate and configured to generate electric power by receiving light emitted from the backlight.

At this time, the substrate is characterized in that it is formed transparent.

The substrate is characterized in that the groove is formed so that the solar cell portion can be inserted while the solar cell portion is located between the insulating film and the substrate.

Here, the solar cell unit is characterized in that the intrinsic semiconductor is located between the P-type semiconductor and the N-type semiconductor.

At this time, the first electrode and the second electrode for outputting the power produced by the solar cell unit to the pixel side or the battery is formed on the outside of the P-type semiconductor and the N-type semiconductor, respectively, formed outside the N-type semiconductor The second electrode may be formed as a transparent electrode so that light emitted from the backlight can reach the intrinsic semiconductor.

The first electrode and the second electrode for outputting the power generated by the solar cell unit to the pixel side or the battery are formed on the outside of the N-type semiconductor and the N-type semiconductor, respectively, and are formed outside the P-type semiconductor. The second electrode is formed as a transparent electrode so that the light emitted from the backlight can reach the intrinsic semiconductor.

On the other hand, in order to achieve the above object, a method of manufacturing an active-driven flat panel display device with a built-in solar cell of the present invention includes: forming an insulating film for blocking current on a solar cell that receives power from outside to produce power; Step B of forming a metal layer to be used as a gate electrode on the insulating film formed in step A; Forming a gate insulator on the metal layer formed in the step B; Depositing an active layer in which a channel is to be formed on the gate insulator formed in step C; It characterized in that it comprises a step E of forming a source electrode and a drain electrode on the active layer deposited in step D.

At this time, the solar cell in the step A is characterized in that the substrate for supplying power to the gate electrode side formed below.

And the substrate is characterized in that it is formed transparent.

In addition, the substrate is characterized in that the groove is formed so that the solar cell portion can be inserted while the solar cell portion is located between the insulating film and the substrate.

Here, the solar cell in the step A is characterized in that the intrinsic semiconductor is located between the P-type semiconductor and the N-type semiconductor.

At this time, the first electrode and the second electrode for outputting the power produced by the solar cell unit to the pixel side or the battery is formed on the outside of the P-type semiconductor and the N-type semiconductor, respectively, formed outside the N-type semiconductor The second electrode may be transparently formed so that light emitted from the backlight can reach the intrinsic semiconductor.

The first electrode and the second electrode for outputting the power generated by the solar cell unit to the pixel side or the battery are formed on the outside of the N-type semiconductor and the N-type semiconductor, respectively, and are formed outside the P-type semiconductor. The second electrode may be formed to be transparent so that light emitted from the backlight may reach the intrinsic semiconductor.

According to the active-type flat panel display device with a solar cell according to the present invention having the above-described configuration, since the power is generated by using light emitted from the backlight, the user can produce power while using the flat panel display device. As a result, the amount of externally supplied power can be reduced as much as possible.

In addition, when the substrate is formed transparent, power can be produced through the solar cell even when the user does not use the flat panel display device, and thus, the battery life of the battery can be increased by that amount.

1 is a view showing a thin film transistor of the prior art.
2 is a view showing that the prior art solar cells are arranged.
3 is a view showing the arrangement and structure of a thin film transistor and a cell of a flat panel display device with a built-in solar cell of the present invention.
4 is a view showing an area capable of integrating a thin film transistor of a flat panel display device in which a solar cell of the present invention is incorporated.

Exemplary embodiments of the present invention will be described in more detail with reference to the accompanying drawings, but the known technical parts are omitted or compressed for brevity of description.

The active-type flat panel display device 100 having a solar cell is a bottom gate method in which a gate electrode 111 is integrated at a lower portion thereof, and light is injected into a channel layer to form an electron-hole pair. A thin film transistor having a structure in which the gate electrode 111 is positioned below the channel layer to block light injected into the channel layer so as not to generate a pair) is used.

As shown in FIG. 3, the flat panel display device 100 includes a pixel unit 110, a substrate 120, an insulating layer 130, a backlight, and a solar cell unit 140.

The pixel unit 110 is formed on the insulating layer 130, and inputs power and an image signal supplied from the outside, and outputs a signal corresponding thereto, and includes a gate electrode 111, an insulator 113, an active layer 115, It is implemented as a thin film transistor including a source electrode 117 and a drain electrode 119.

The insulating layer 130 is positioned between the pixel portion 110 and the substrate 120 to block current that may occur between the substrate 120 and the pixel portion 110. In this case, the insulating layer 130 may be SiNx. Or SiO ₂ .

The substrate 120 is provided to supply power to the pixel unit 110. The substrate 120 may be electrically connected to an external battery. Therefore, the power of the battery may be supplied to the pixel unit 110 through the substrate 120, and the power produced by the solar cell unit 140 may be stored back into the battery through the substrate 120.

In addition, a groove is formed in the substrate 120 to allow the solar cell unit 140 to be inserted, that is, as shown in FIG. 3, the groove formed in the substrate 120 is inserted into the solar cell unit 140. The upper surface of the and the upper surface of the solar cell unit 140 is coincident. An insulating film 130 is formed thereon.

In addition, the substrate 120 may use a transparent substrate to allow the light emitted from the backlight to reach the solar cell unit 140.

The backlight emits light toward the substrate 120 to allow the light to reach the pixel unit 110. The light emitted from the backlight passes through the substrate 120. The light is transmitted through the substrate 120 where the solar cell 140 is not positioned. In the solar cell 140 located below the thin film transistor, the backlight is illuminated. It receives the light emitted from and produces power.

The solar cell unit 140 generates power by receiving light emitted from a backlight or external light, and has a structure in which an intrinsic semiconductor 143 is positioned between the P-type semiconductor 141 and the N-type semiconductor 145. At this time, in the embodiment of the present invention, the P-type semiconductor 141 uses P-type Si, the intrinsic semiconductor 143 uses intrinsic Si, and the N-type semiconductor 145 uses N-type Si. First and second electrodes 147 and 149 are formed in the P-type semiconductor 141 and the N-type semiconductor 145, respectively, so that power generated by light can be accumulated in the battery.

As an example, the second electrode 149 is used as a transparent electrode under the PIN (P type semiconductor-intrinsic semiconductor-N type semiconductor) diode so that the light emitted from the backlight can efficiently reach the intrinsic semiconductor 143. Representatively ITO.

Looking at manufacturing the thin film transistor in the solar cell unit 140 configured as described above in the flat panel display device 100 configured as described above, a metal layer for use as the gate electrode 111 is formed on the stacked structure of the PIN (NIP) diode, An insulator 113 (preferably using SiNx) is formed on the gate electrode 111. Then, a-Si may be used to deposit the active layer 115 on which the channel is to be formed over the insulator 113.

In addition, a high concentration of doped semiconductor (eg, n-Si) is formed on the active layer 115 for ohmic contact. In this state, the metal to be used as the source electrode 117 and the drain electrode 119 is deposited at the top. The insulator 113 is covered with the thin film transistor thus formed to protect the device.

Referring to FIG. 3, when a pin structure semiconductor is used for back roughness measurement in an LCD display, the structure of the semiconductor may be P-I-N, but may be applied as an N-I-P structure. In the case of the bottom gate TFT, the light generated from the back backlight of the active layer 115 flows into the active layer 115 so that the gate electrode 111 flows into the active layer 115 to prevent electron-hole pairs from being formed. It is formed to block. In the present exemplary embodiment, the solar cell unit 140 is disposed under the gate electrode 111 to generate power by receiving the light emitted from the gate electrode 111 from the solar cell unit 140.

Therefore, energy is discarded because the solar cell unit 140 generates the light energy that is discarded, and the generated power is stored and used as a battery.

In FIG. 4, an area capable of integrating a solar cell converting light energy into electrical energy is illustrated. In the drawing, the solar cell is integrated in the lower portion of the TFT and the gate wiring 160 except the wiring portion of the data line 150, among the areas for blocking the light of the backlight from transmitting to the front portion, thereby to maximize the discarded light energy. Can be.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. And the scope of the present invention should be understood as the following claims and their equivalents.

100: flat panel display element 110: pixel portion
111: gate electrode 113: insulator
115: active layer 117: source electrode
119: drain electrode 120: substrate
130: insulating film 140: solar cell
141: P-type semiconductor 143: intrinsic semiconductor
145: N-type semiconductor 147: first electrode
149: second electrode 150: data line
160: gate wiring

Claims (13)

A pixel portion including a gate electrode, an insulator, an active layer, a source electrode, and a drain electrode;
A substrate supplying power to the pixel portion;
An insulating layer disposed between the pixel portion and the substrate to block current;
A backlight for emitting light toward the pixel portion; And
And a solar cell unit disposed between the insulating layer and the substrate and configured to generate electric power by receiving light emitted from the backlight. The method according to claim 1,
And the substrate is formed to be transparent. The method according to claim 1,
And the substrate has a groove formed to allow the solar cell unit to be inserted while the solar cell unit is positioned between the insulating layer and the substrate. The method according to claim 1,
And wherein the solar cell unit has a structure in which an intrinsic semiconductor is positioned between a P-type semiconductor and an N-type semiconductor. The method of claim 4,
First and second electrodes for outputting the power generated by the solar cell unit to the pixel side or the battery are formed outside the P-type semiconductor and the N-type semiconductor, respectively.
And a second electrode formed on the outside of the N-type semiconductor, the second electrode being transparent so that light emitted from the backlight can reach the intrinsic semiconductor. The method of claim 4,
The first electrode and the second electrode for outputting the power produced by the solar cell unit to the pixel side or the battery are formed on the outside of the N-type semiconductor and the N-type semiconductor, respectively,
And a second electrode formed on the outside of the P-type semiconductor. The second electrode is transparently formed so that the light emitted from the backlight can reach the intrinsic semiconductor. A step of forming an insulating film for blocking the current over the solar cell to generate power by receiving light from the outside;
Step B of forming a metal layer to be used as a gate electrode over the insulating film formed in step A;
Forming a gate insulator over the metal layer formed in the step B;
Depositing an active layer in which a channel is to be formed on the gate insulator formed in step C;
And a step (E) of forming a source electrode and a drain electrode over the active layer deposited in step D. The method of claim 7,
And the solar cell in the step A is formed with a substrate for supplying power to the gate electrode. The method according to claim 8,
The substrate is a method of manufacturing an active-driven flat panel display device with a built-in solar cell, characterized in that formed transparent. The method according to claim 8,
And the substrate has a groove formed to allow the solar cell unit to be inserted while the solar cell unit is positioned between the insulating layer and the substrate. The method of claim 7,
Wherein the solar cell is a diode in which an intrinsic semiconductor is positioned between a P-type semiconductor and an N-type semiconductor. The method of claim 11,
First and second electrodes for outputting the power generated by the solar cell unit to the pixel side or the battery are formed outside the P-type semiconductor and the N-type semiconductor, respectively.
And a second electrode formed on the outside of the N-type semiconductor is formed to be transparent so that light emitted from the backlight can reach the intrinsic semiconductor. The method of claim 11,
The first electrode and the second electrode for outputting the power produced by the solar cell unit to the pixel side or the battery are formed on the outside of the N-type semiconductor and the N-type semiconductor, respectively,
And a second electrode formed on the outside of the P-type semiconductor is formed to be transparent so that light emitted from the backlight can reach the intrinsic semiconductor.

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