KR20130007368A - Light emitting diode chip and method for manufacturing the same, liquid crystal display device including light emitting diode chip - Google Patents

Light emitting diode chip and method for manufacturing the same, liquid crystal display device including light emitting diode chip Download PDF

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Publication number
KR20130007368A
KR20130007368A KR1020110065591A KR20110065591A KR20130007368A KR 20130007368 A KR20130007368 A KR 20130007368A KR 1020110065591 A KR1020110065591 A KR 1020110065591A KR 20110065591 A KR20110065591 A KR 20110065591A KR 20130007368 A KR20130007368 A KR 20130007368A
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South Korea
Prior art keywords
light emitting
emitting diode
diode chip
layer
thin film
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KR1020110065591A
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Korean (ko)
Inventor
김영채
한예지
박청훈
최병균
정태일
강세은
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엘지디스플레이 주식회사
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Priority to KR1020110065591A priority Critical patent/KR20130007368A/en
Publication of KR20130007368A publication Critical patent/KR20130007368A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package

Abstract

The present invention relates to a light emitting diode chip, a method of manufacturing the same, and a liquid crystal display device including the light emitting diode chip.
The light emitting diode chip manufacturing method of the present invention. Forming a first semiconductor conductive layer on the substrate; Forming a light emitting layer on the first semiconductor conductive layer; Forming a second semiconductor conductive layer on the light emitting layer; Forming a transparent conductive thin film layer on the second semiconductor conductive layer; And forming a plurality of grains for diffusely reflecting light incident from the transparent conductive thin film layer.

Description

LIGHT EMITTING DIODE CHIP AND METHOD FOR MANUFACTURING THE SAME, LIQUID CRYSTAL DISPLAY DEVICE INCLUDING LIGHT EMITTING DIODE CHIP}

The present invention relates to a light emitting diode chip, a method for manufacturing the same, and a liquid crystal display device including the light emitting diode chip, and more particularly, light of a light emitting diode chip using diffuse reflection by spherical grains formed on the surface of a transparent conductive thin film layer. A light emitting diode chip for improving the extraction efficiency, a manufacturing method thereof, and a liquid crystal display device including the light emitting diode chip.

Recently, as the information society develops, the demand for the display field is increasing in various forms, and in response, various flat panel display devices, for example, liquid crystal, which have features such as thinning, light weight, and low power consumption Liquid crystal display devices, plasma display panel devices, electroluminescent display devices, and the like have been studied.

Among these, the liquid crystal display is one of the most widely used flat panel display devices, and includes a liquid crystal layer between the two substrates and the two substrates on which the pixel electrode and the common electrode are formed.

Such a liquid crystal display determines an orientation of liquid crystal molecules of a liquid crystal layer according to an electric field generated by a voltage applied to an electrode, and controls polarization of incident light to display an image.

The liquid crystal display device does not have a light emitting device, and thus a separate light source must be provided. The light source is called a backlight unit (BLU). Here, as a light source of the backlight unit, a light emitting diode (LED) having small size, low power consumption, high reliability, and the like is widely used. In general, the backlight unit may be broadly classified into a side type backlight unit and a direct type backlight unit.

In the side type backlight unit, the LED assembly is disposed on the side of the liquid crystal display to supply light to the liquid crystal panel through the reflection plate and the light guide plate, and the thickness of the side backlight unit is mainly used in a notebook or the like.

On the other hand, in the direct type backlight unit, the LED assembly is disposed on the back of the liquid crystal display, and the light is irradiated to the front of the liquid crystal panel through the backlight unit, so that high level is possible, and is mainly used in LCD TVs. .

FIG. 1 is a view schematically showing a cross section of a general light emitting diode chip, and FIG. 2 is a view referred to for explaining total reflection in a transparent conductive thin film layer of a general light emitting diode chip.

As shown in FIG. 1, the light emitting diode chip 10 includes a substrate 11, a first semiconductor conductive layer 13, a light emitting layer 15, a second semiconductor conductive layer 17, and a transparent conductive thin film layer 19. It includes.

Such a light emitting diode chip 10, first, the first semiconductor conductive layer 13, the light emitting layer 15, the second semiconductor conductive layer 17 on the substrate 11 by MOCVD (Metal Organic Chemical Vapor Deposition) method ), And then, a transparent conductive thin film layer 19 is formed by using a sputter device or the like.

Here, the first semiconductor conductive layer 13 may be made of GaN (n-GaN) or GaN / AlGaN doped with n-type conductive impurities. Examples of the n-type conductive impurities include Si, Ge, Sn, and the like. This can be used.

The second semiconductor conductive layer 17 may be made of GaN (p-GaN) or GaN / AlGaN doped with p-type impurity, and examples of the p-type impurity include Mg, Zn, and Be. This can be used.

In addition, the light emitting layer 15 is a place where light is generated by coupling of electron-hole pairs when an electric field is applied, and may be formed by combining various GaN-based materials.

On the other hand, the transparent conductive thin film layer 19, if the electrical conductivity of the semiconductor conductive layer is not good, and serves to compensate for this, it is preferably made of a material having good light transmittance as well as electrical conductivity.

The transparent conductive thin film layer 19 may be, for example, Induim-Tin-Oxide (ITO).

Although not shown, a buffer layer (not shown) made of GaN, AlN / GaN, or the like may be further formed between the substrate 11 and the first semiconductor conductive layer 13.

In addition, a first electrode (not shown) and a second electrode (not shown) connected to each of the first semiconductor conductive layer 13 and the second semiconductor conductive layer 17 may be included.

The light emitted from the light emitting layer 15 of the light emitting diode chip 10 is emitted to the air from the flat transparent conductive thin film layer 19, so that total reflection occurs, so that the light is not emitted to the outside of the light emitting diode chip 10 and may be totally reflected inside. high.

In general, light may be refracted due to the difference in refractive index of the medium at the boundary of the medium, and the degree of refraction is related to the angle of incidence and the refractive index of each medium.

At this time, total reflection occurs when the incident angle of the light incident on the dense medium becomes greater than or equal to the critical angle in the case where the dense medium (the medium having the large refractive index) enters the small medium (the medium having the small refractive index).

Therefore, in the light emitting diode chip as described above, since light enters the air having a small refractive index (n = 1) from the transparent conductive thin film layer having a large refractive index (n = 1.9), as shown in FIG. Among the light emitted, the light incident at an angle of incidence greater than or equal to the critical angle is totally reflected and cannot go out of the light emitting diode chip.

As a result, the light extraction efficiency of the LED chip is reduced.

The present invention is to solve the above problems, by generating a plurality of spherical grains on the surface of the transparent conductive thin film layer to suppress the total reflection of light from the transparent conductive thin film layer to the air to improve the light extraction efficiency of the light emitting diode chip An object of the present invention is to provide a light emitting diode chip, a method of manufacturing the same, and a liquid crystal display device including the light emitting diode chip.

According to a preferred embodiment of the present invention, there is provided a light emitting diode chip comprising: a substrate; A first semiconductor conductive layer formed on the substrate; A light emitting layer formed on the first semiconductor conductive layer; A second semiconductor conductive layer formed on the light emitting layer; A transparent conductive thin film layer formed on the second semiconductor conductive layer; It characterized in that it comprises a plurality of grains for diffusely reflecting the light incident from the transparent conductive thin film layer.

Here, the refractive index of the plurality of grains may be between the refractive index of the transparent conductive thin film layer and the refractive index of air.

And preferably a first electrode connected to the first semiconductor conductive layer and a second electrode connected to the second semiconductor conductive layer.

A liquid crystal display device including a light emitting diode chip according to a preferred embodiment of the present invention for achieving the above object, in the liquid crystal display device comprising a backlight unit including a plurality of light emitting diode chips, the light emitting diode The chip includes a substrate, a first semiconductor conductive layer formed on the substrate, a light emitting layer formed on the first semiconductor conductive layer, a second semiconductor conductive layer formed on the light emitting layer, and the second semiconductor conductive. It characterized in that it comprises a transparent conductive thin film layer formed on the layer, and a plurality of grains for diffuse reflection of light incident from the transparent conductive thin film layer.

Here, the refractive index of the plurality of grains may be between the refractive index of the transparent conductive thin film layer and the refractive index of air.

And preferably a first electrode connected to the first semiconductor conductive layer and a second electrode connected to the second semiconductor conductive layer.

A method of manufacturing a light emitting diode chip according to an embodiment of the present invention for achieving the above object includes the steps of forming a first semiconductor conductive layer on a substrate; Forming a light emitting layer on the first semiconductor conductive layer; Forming a second semiconductor conductive layer on the light emitting layer; Forming a transparent conductive thin film layer on the second semiconductor conductive layer; And forming a plurality of grains for diffusely reflecting light incident from the transparent conductive thin film layer.

Here, the refractive index of the plurality of grains may be between the refractive index of the transparent conductive thin film layer and the refractive index of air.

In addition, the method of manufacturing a light emitting diode chip according to an exemplary embodiment of the present invention may further include performing heat treatment after forming the plurality of grains.

In addition, it is preferable that the said plurality of grains are formed by the plasma process with respect to the said transparent conductive thin film layer.

Here, the plasma may be H2 plasma or Ar plasma.

On the other hand, the light emitting diode chip manufacturing method according to a preferred embodiment of the present invention, forming a first electrode connected to the first semiconductor conductive layer; The method may further include forming a second electrode connected to the second semiconductor conductive layer.

As described above, the light emitting diode chip according to the present invention may generate spherical grains in the transparent conductive thin film layer, and light extraction efficiency may be improved as diffuse reflection occurs by the generated grains.

By generating grains through the plasma process, the processing time of the LED chip can be reduced.

FIG. 1 is a view schematically showing a cross section of a general light emitting diode chip, and FIG. 2 is a view referred to for explaining total reflection in a transparent conductive thin film layer of a general light emitting diode chip.
3 illustrates a typical LED assembly.
4 is a schematic cross-sectional view of a light emitting diode chip according to a preferred embodiment of the present invention.
5 is a view referred to for explaining the total reflection in the transparent conductive thin film layer of the LED chip according to a preferred embodiment of the present invention.
6A to 6D are views referred to for describing a manufacturing process of a light emitting diode chip according to a preferred embodiment of the present invention.
7 to 9 are views in which a plurality of grains formed on the transparent conductive thin film layer are referred to explain the transmittance difference before and after the heat treatment process.
10 is a photograph of a transparent conductive thin film layer having a plurality of grains observed with a scanning electron microscope.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

Figure 3 is a view showing a general LED assembly, Figure 4 is a schematic view showing a cross-section of a light emitting diode chip according to a preferred embodiment of the present invention, Figure 5 is a light emitting diode chip according to a preferred embodiment of the present invention Is a view referred to for explaining the total reflection in the transparent conductive thin film layer.

As shown in FIG. 3, the LED assembly includes a plurality of light emitting diode packages and a printed circuit board 100.

Here, the light emitting diode package may include at least one light emitting diode chip 110 and a mold part 120 surrounding the light emitting diode chip 110.

The light emitting diode chip 110 may emit light toward a light incident surface of a light guide plate (not shown). For example, the light emitting diode chip 110 may emit light having a color of red (R), green (G), and blue (B), respectively. When the RGB LEDs are turned on at the same time, white light by color mixing can be realized.

The light emitting diode chip 110 may be composed of compound semiconductors such as GaAs-based, AlGaAs-based, GaN-based, InGaN-based, and InGaAlP-based, and may be a horizontal light emitting diode chip or a vertical light emitting diode chip.

Here, the mold part 120 serves to protect the light emitting diode chip 110 and may be manufactured using a rigid polymer resin (for example, poly phthalamide (PPA)).

In general, a light emitting diode chip generates high heat in the process of converting electrical energy into light energy. When the temperature of the light emitting diode chip is above a certain temperature, the efficiency of light emitted from the light emitting diode chip may be reduced. .

Therefore, the printed circuit board 100 constituting the LED assembly mainly uses a printed circuit board made of a metal material that can easily dissipate heat.

However, recently, printed circuit boards made of non-metallic materials such as FR-4 having excellent heat dissipation have also been used.

As shown in FIG. 4, the LED chip 110 according to the present invention includes a substrate 111, a first semiconductor conductive layer 113, a light emitting layer 115, a second semiconductor conductive layer 117, and a transparent conductivity. The thin film layer 119 and a plurality of spherical grains 119a are included.

First, the light emitting diode chip 110 is connected to the first semiconductor conductive layer 113, the light emitting layer 115, and the second semiconductor conductive layer 117 on the substrate 111 by MOCVD (Metal Organic Chemical Vapor Deposition) method. To grow.

Next, the transparent conductive thin film layer 119 may be formed on the second semiconductor conductive layer 117 using a sputtering equipment.

Here, the substrate 111 may be formed using a transparent material, preferably including sapphire, in addition to sapphire, zinc oxide (ZNO), gallium nitride (GaN), silicon carbide ( silicon carbide (SiC) or the like.

The first semiconductor conductive layer 113 may be formed of GaN (n-GaN) or GaN / AlGaN doped with n-type conductivity. Examples of the n-type conductivity include Si, Ge, Sn, and the like. This can be used.

In addition, the second semiconductor conductive layer 117 may be made of GaN (p-GaN) or GaN / AlGaN doped with p-type conductive impurities. Examples of the p-type conductive impurities include Mg, Zn, and Be, and the like. This can be used.

In addition, the emission layer 115 is a place where light is generated by the combination of electron-hole pairs when an electric field is applied, and may be formed by combining various GaN-based materials.

When an electric field is applied to the light emitting layer 115, light is generated by the coupling of the electron-hole pairs.

In other words, when a voltage is applied between the first electrode and the second electrode of the light emitting diode chip 110, electrons and holes are respectively applied to the first semiconductor conductive layer 113 and the second semiconductor conductive layer 117. holes are injected.

In addition, electrons and holes respectively transferred from the first semiconductor conductive layer 113 and the second semiconductor conductive layer 117 arrive at the emission layer 115 and are recombined. In the process of recombination, extra energy is converted into light energy. The light emitting diodes emit light as light is emitted to the outside.

Although not shown, a buffer layer (not shown) made of GaN or AlN / GaN may be further formed between the substrate 111 and the first semiconductor conductive layer 113.

In addition, the semiconductor device may include a first electrode (not shown) and a second electrode (not shown) connected to each of the first semiconductor conductive layer 113 and the second semiconductor conductive layer 117.

Meanwhile, when the electrical conductivity of the second semiconductor conductive layer 117 of the light emitting diode chip 110 is not good, the transparent conductive thin film layer 119 may be formed on the second semiconductor conductive layer 117 to compensate for this. have.

At this time, the transparent conductive thin film layer 119 is preferably made of a material having good light transmittance as well as electrical conductivity, for example, may be Induim-Tin-Oxide (ITO).

In addition, the refractive index of the transparent conductive thin film layer 119, the refractive index of the transparent conductive thin film layer 119 is the refractive index of the second semiconductor conductive layer 117 and the refractive index of air in order to greatly improve the light extraction efficiency of the light emitting diode chip 110 It is preferable to be between.

This is to reduce the refractive index difference between the transparent conductive thin film layer 119 and the air in order to increase the critical angle at which total reflection may occur when the light generated in the light emitting layer 115 passes through the transparent conductive thin film layer 119 and exits the air. to be.

Meanwhile, the plurality of spherical grains 119a may be formed on the transparent conductive thin film layer 119 as described above, and serve to induce diffused reflection of light emitted from the transparent conductive thin film layer 119.

In other words, as a plurality of spherical grains 119a are formed on the transparent conductive thin film layer 119, total reflection of light emitted from the transparent conductive thin film layer 119 into the air can be suppressed, and as a result, the present invention is preferable. Light extraction efficiency of the LED chip according to the embodiment can be improved.

Such a plurality of spherical grains 119a may be formed on the transparent conductive thin film layer 119 through plasma treatment, and the plasma used may be, for example, H2 plasma or Ar plasma.

Meanwhile, the transmittance of the light emitting diode chip may be reduced by the plurality of spherical grains 119a generated through the plasma treatment, and the heat treatment may improve the transmittance again.

As shown in FIG. 5, a plurality of spherical grains 119a formed on the transparent conductive thin film layer 119 of the LED chip 110 according to the present invention are transparent conductive thin film layers due to diffused reflection or scattering of light. Change the path of light emitted from the air at (119).

In this case, the plurality of spherical grains 119a may be formed of a material having a refractive index between the refractive index of the transparent conductive thin film layer 119 and the refractive index of air.

As a result, the transparent conductive thin film layer 119 in which the plurality of spherical grains 119a of the present invention is formed has more light to the outside of the light emitting diode chip 110 by reducing the total reflection condition than the conventional flat transparent conductive thin film layer 119. Can be released.

6A to 6D are views referred to for describing a manufacturing process of a light emitting diode chip according to a preferred embodiment of the present invention.

As shown in FIG. 6A, first, a first semiconductor conductive layer 113 is formed on a substrate 111 prepared in advance. Here, the first semiconductor conductive layer 113 may be GaN (n-GaN) doped with n-type conductive impurities such as Si, Ge, and Sn, and may be formed by a metal organic chemical vapor deposition (MOCVD) method. Can be.

Thereafter, the light emitting layer 115 and the second semiconductor conductive layer 117 may be sequentially formed on the first semiconductor conductive layer 113.

The first semiconductor conductive layer 113 may be formed of GaN (n-GaN) or GaN / AlGaN doped with n-type conductivity. Examples of the n-type conductivity include Si, Ge, Sn, and the like. Can be used.

The light emitting layer 115 may be formed of a GaN-based group III-V nitride semiconductor layer having InxAlyGa1-x-yN (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, and 0 ≦ x + y ≦ 1). In particular, it is preferable to form an InGaN layer or an AlGaN layer.

The light emitting layer 115 may be formed of, for example, a GaN / InGaN / GaN MQW or GaN / AlGaN / GaN MQW structure.

In addition, the second semiconductor conductive layer 117 may be made of GaN (p-GaN) or GaN / AlGaN doped with p-type conductive impurities. Examples of the p-type conductive impurities include Mg, Zn, and Be, and the like. Can be used.

As shown in FIG. 6B, a transparent conductive thin film layer 119 is formed next on the second semiconductor conductive layer 117 using a sputtering equipment or the like.

Here, the transparent conductive thin film layer 119, if the electrical conductivity of the semiconductor conductive layer is not good, serves to compensate for this, it is preferably made of a material having good light transmittance as well as electrical conductivity.

The transparent conductive thin film layer 119 may be, for example, Induim-Tin-Oxide (ITO).

Then, in order to form a plurality of grains, as shown in FIG. 6C, a plasma treatment may be performed on the transparent conductive thin film layer 119.

The plasma treatment may use a dry etching apparatus or a Plasma Enhanced Chemical Vapor Deposition (PECVD) apparatus.

The size and shape of the plurality of grains formed through the plasma treatment may vary slightly depending on the conditions under which the H2 plasma is applied.

For example, the plasma treatment condition, when using a dry etching equipment, the flow rate of H2 is 100sccm, the process pressure may be 100mT. The split condition RF power can be 500w and the process time can be 30sec.

In this manner, as shown in Fig. 6D, a large number of grains 119a are formed on the transparent conductive thin film layer 119 of the light emitting diode chip of the present invention.

When a plurality of grains 119a are formed on the transparent conductive thin film layer 119, the light emitted from the transparent conductive thin film layer 119 may not be totally reflected into the light emitting diode chip.

That is, in the light emitting diode chip of the present invention, by forming a plurality of grains on the transparent conductive thin film layer 119 to create an uneven structure on the surface, light can easily escape to the outside due to diffuse reflection, thereby improving light extraction efficiency. In addition, on the uneven structure surface, light distribution can be made uniform due to scattering.

On the other hand, when a plurality of grains are formed on the transparent conductive thin film layer 119 through the plasma treatment process, the transmittance may be reduced by the plurality of grains formed.

When the transmittance is reduced, the characteristics of the light emitting diode chip are affected. When the heat treatment process is performed using RTA (Rapid Thermal Annealing) equipment, the transmittance may be improved again.

For example, heat treatment at 550 ° C. for about 2 minutes may improve permeability.

Accordingly, the light emitting diode chip according to the present invention may improve light extraction efficiency by reducing light loss into the light emitting diode chip by using diffuse reflection by a plurality of grains generated in the transparent conductive thin film layer 119.

In addition, as the grain is generated through the plasma process, the process time of the LED chip may be reduced.

7 to 9 are referred to explain the transmittance difference before and after the heat treatment process of the plurality of grains formed on the transparent conductive thin film layer, Figure 7 is a view before forming a plurality of grains on the transparent conductive thin film layer 8 is a view before a plurality of grains have been formed on a transparent conductive thin film layer and subjected to a heat treatment process, and FIG. 9 is a view after a plurality of grains have been formed on a transparent conductive thin film layer and subjected to a heat treatment process.

When a plurality of grains are formed on the transparent conductive thin film layer, the transmittance is reduced by the plurality of grains formed.

Such a decrease in transmittance causes a decrease in the characteristics of the light emitting diode chip.

When the heat treatment process using the RTA (Rapid Thermal Annealing) equipment is carried out, the transmittance of the light emitting diode chip is increased again, so that the transmittance may be improved to a similar degree as before the plasma treatment.

10 is a photograph of a transparent conductive thin film layer having a plurality of grains observed with a scanning electron microscope.

As shown in FIG. 10, a plurality of grains are formed on the transparent conductive thin film layer, wherein the size and shape of the plurality of grains may vary little by little depending on the condition of applying the H 2 plasma.

The embodiments of the present invention as described above are merely illustrative, and those skilled in the art can make modifications without departing from the gist of the present invention. Accordingly, the protection scope of the present invention includes modifications of the present invention within the scope of the appended claims and equivalents thereof.

111 substrate 113 first semiconductor conductive layer
115: light emitting layer 117: second semiconductor conductive layer
119: transparent conductive thin film layer 119a: a plurality of spherical grains

Claims (12)

A substrate;
A first semiconductor conductive layer formed on the substrate;
A light emitting layer formed on the first semiconductor conductive layer;
A second semiconductor conductive layer formed on the light emitting layer;
A transparent conductive thin film layer formed on the second semiconductor conductive layer;
A plurality of grains for diffusely reflecting light incident from the transparent conductive thin film layer
Light emitting diode chip comprising a.
The method of claim 1,
And the refractive index of the plurality of grains is between the refractive index of the transparent conductive thin film layer and the refractive index of air.
The method of claim 1,
And a second electrode connected to the first semiconductor conductive layer and a second electrode connected to the second semiconductor conductive layer.
A liquid crystal display device comprising a backlight unit including a plurality of light emitting diode chips.
The light emitting diode chip,
A substrate, a first semiconductor conductive layer formed on the substrate, a light emitting layer formed on the first semiconductor conductive layer, a second semiconductor conductive layer formed on the light emitting layer, and the second semiconductor conductive layer And a light emitting diode chip comprising a plurality of grains for diffusely reflecting light incident from the transparent conductive thin film layer.
5. The method of claim 4,
And a refractive index of the plurality of grains is between the refractive index of the transparent conductive thin film layer and the refractive index of air.
5. The method of claim 4,
And a light emitting diode chip, the light emitting diode chip further comprising a first electrode connected to the first semiconductor conductive layer and a second electrode connected to the second semiconductor conductive layer.
Forming a first semiconductor conductive layer on the substrate;
Forming a light emitting layer on the first semiconductor conductive layer;
Forming a second semiconductor conductive layer on the light emitting layer;
Forming a transparent conductive thin film layer on the second semiconductor conductive layer;
Forming a plurality of grains for diffusely reflecting light incident from the transparent conductive thin film layer
Light emitting diode chip manufacturing method comprising a.
The method of claim 7, wherein
And the refractive index of the plurality of grains is between the refractive index of the transparent conductive thin film layer and the refractive index of air.
The method of claim 7, wherein
The method of manufacturing a light emitting diode chip further comprising the step of performing heat treatment after forming the plurality of grains.
The method of claim 7, wherein
The plurality of grains, the light emitting diode chip manufacturing method, characterized in that formed by plasma treatment for the transparent conductive thin film layer.
The method of claim 10,
The plasma is a light emitting diode chip manufacturing method, characterized in that the H2 plasma or Ar plasma.
The method of claim 7, wherein
Forming a first electrode connecting with the first semiconductor conductive layer;
Forming a second electrode connected to the second semiconductor conductive layer
Light emitting diode chip manufacturing method comprising a further.
KR1020110065591A 2011-07-01 2011-07-01 Light emitting diode chip and method for manufacturing the same, liquid crystal display device including light emitting diode chip KR20130007368A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140142384A (en) * 2013-05-30 2014-12-12 엘지이노텍 주식회사 A Light emitting device and A Fabrication method thereof
KR20170126167A (en) * 2016-05-09 2017-11-17 엘지이노텍 주식회사 A light emitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140142384A (en) * 2013-05-30 2014-12-12 엘지이노텍 주식회사 A Light emitting device and A Fabrication method thereof
KR20170126167A (en) * 2016-05-09 2017-11-17 엘지이노텍 주식회사 A light emitting device

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