KR20120138299A - Optical semiconductor based lighting apparatus - Google Patents

Optical semiconductor based lighting apparatus Download PDF

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Publication number
KR20120138299A
KR20120138299A KR1020110057665A KR20110057665A KR20120138299A KR 20120138299 A KR20120138299 A KR 20120138299A KR 1020110057665 A KR1020110057665 A KR 1020110057665A KR 20110057665 A KR20110057665 A KR 20110057665A KR 20120138299 A KR20120138299 A KR 20120138299A
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KR
South Korea
Prior art keywords
light
space
reflector
semiconductor
reflectors
Prior art date
Application number
KR1020110057665A
Other languages
Korean (ko)
Inventor
김대원
김재영
박기섭
Original Assignee
주식회사 포스코엘이디
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority to KR1020110057665A priority Critical patent/KR20120138299A/en
Publication of KR20120138299A publication Critical patent/KR20120138299A/en

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/68—Details of reflectors forming part of the light source
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/69—Details of refractors forming part of the light source
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V5/00—Refractors for light sources
    • F21V5/008—Combination of two or more successive refractors along an optical axis
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2101/00—Point-like light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]

Abstract

An optical semiconductor based lighting apparatus is disclosed. The lighting device includes a base; Annular reflectors arranged on the base; An annular light reflection space partitioned between neighboring reflectors; Semiconductor photons for supplying light to the light reflection space; And a light emission gate formed on the light reflection spaces.

Description

Optical semiconductor based lighting device {OPTICAL SEMICONDUCTOR BASED LIGHTING APPARATUS}

The present invention relates to an optical semiconductor-based lighting device, and more particularly, to an optical semiconductor-based lighting device that reduces the direct light from the semiconductor optical device and increases the indirect light. In addition, the present invention relates to an optical semiconductor-based lighting device that can be usefully used for mood lighting, interior lighting or decoration lighting.

Fluorescent and incandescent lamps have been widely used as light sources for illumination. Incandescent lamps have high power consumption and are inferior in efficiency and economy, and for this reason, their demand is greatly reduced. This decline is expected to continue in the future. On the other hand, fluorescent lamps are more efficient and economical at about one-third of the power consumption of incandescent lamps. However, fluorescent lamps have a problem in that blackening occurs due to a high applied voltage, resulting in short lifespan. In addition, since the fluorescent lamp uses a vacuum glass tube in which mercury, which is a harmful heavy metal material, is injected together with argon gas, there is a disadvantage of being unfriendly to the environment.

Recently, the demand for a lighting device including a semiconductor optical device such as an LED as a light source, that is, the LED lighting device is rapidly increasing. LED lighting devices have the advantage of long lifetime and low power driving. In addition, the LED illumination device is environmentally friendly since it does not use environmentally harmful substances such as mercury.

LED lighting devices having various types and various structures have been developed. Until now, research and development have been conducted mainly to replace conventional lighting devices using incandescent or fluorescent light sources, but recently, semiconductor optical devices such as LEDs are being applied to various applications such as mood lighting, interior lighting, or decoration lighting. Attempts are increasing. Since a semiconductor optical device such as an LED has a shape of a point light source, it has a design advantage that a plurality of semiconductor optical devices can be used in an appropriate pattern. On the other hand, semiconductor optical devices have a limitation in directly using direct light as compared to incandescent and fluorescent lamps.

Accordingly, there is a need in the art to maximize the advantages through proper placement of semiconductor optical devices, but to minimize the disadvantages of semiconductor optical devices such as glare.

One problem to be solved by the present invention is to provide an optical semiconductor lighting device that enhances the advantages of the semiconductor optical device having the form of a point light source and minimizes the disadvantages of the semiconductor optical device such as glare.

Another problem to be solved by the present invention is to provide an optical semiconductor-based lighting device that can reduce the glare by increasing the indirect light using the reflectors, and obtain the intended light pattern using the arrayed pattern of the reflectors.

Optical semiconductor based lighting apparatus according to an aspect of the present invention, the base; Annular reflectors arranged on the base; An annular light reflection space partitioned between neighboring reflectors; Semiconductor photons for supplying light to the light reflection space; And a light emission gate formed on the light reflection spaces.

According to one embodiment, the semiconductor optical devices are mounted on the base to form a plurality of annular arrays, the semiconductor optical elements of each of the annular array surrounds the reflector located inwardly located in each of the light reflection space.

According to an embodiment, at least one of the reflectors may be disposed to partially cover the adjacent semiconductor optical device, and further, at least one of the reflectors may be disposed to cover the adjacent semiconductor optical device as a whole.

According to another embodiment, at least one of the reflectors is formed with a light transmission hole, at least one of the semiconductor photons through the light transmission hole to the light from one light reflection space to another light reflection space. Is arranged to deliver. The plurality of semiconductor optical devices may be arranged in an annular shape, and each of the reflectors may be formed in an annular array in which light transmission holes for sequentially transmitting light from the semiconductor photons are transferred to the plurality of light reflection spaces. The size of the light transmission hole may be gradually reduced toward the reflector away from the reflector close to the semiconductor photons.

According to one embodiment, each of the reflectors has an open cross-sectional structure on one side so as to include an inner reflecting surface surrounding the light reflecting space inward and an outer reflecting surface opposite thereto.

According to one embodiment, the reflectors may be arranged such that the inner reflecting surfaces face the same direction toward the outer or center.

Alternatively, the neighboring reflector may be arranged such that the inner reflecting surface and the outer reflecting surface face each other.

According to one embodiment, the optical semiconductor-based lighting device may include a diffuser or a remote phosphor on the external reflection surface.

According to an embodiment, the base may include a reflective surface.

According to one embodiment, each of the plurality of reflectors may be configured to enable height adjustment up and down on the base.

According to one embodiment, the base may be configured to replace the reflector with a reflector of a different size.

According to another aspect of the invention, the base and; A reflector installed on the base; A first space and a second space separated by the reflector; A semiconductor optical element disposed in the first space; There is provided an optical semiconductor-based lighting device including a light emission gate formed on the second space. At this time, the reflector is formed with a light transmission hole for transmitting the light of the first space to the second space. The first space may be a space partitioned between two neighboring reflectors, but the reflector exists only on one side and the other side may be an open space without the reflector.

According to another aspect of the invention, the base; A first reflector and a second reflector provided on the base; A first space, a second space, and a third space sequentially partitioned by the first reflector and the second reflector; A semiconductor optical element disposed in the first space; There is provided an optical semiconductor based illumination device including a light emitting gate formed in the second space and the upper portion of the third space, wherein the first reflector is a first light for transmitting the light of the first space to the second space A transmission hole is formed, and the second reflector is formed with a second light transmission hole for transmitting the light of the second space to the third space, and the size of the first light transmission hole is the size of the second light transmission hole. Can be greater than

The term 'semiconductor optical element' refers to a device including or using an optical semiconductor such as a light emitting diode chip. Preferably, the semiconductor optical device is a package level LED including a light emitting diode chip therein.

According to the present invention, it is possible to implement an optical semiconductor lighting apparatus which increases the advantages of the semiconductor optical device having the form of a point light source and minimizes the disadvantages of the semiconductor optical device such as glare. In addition, the optical semiconductor-based lighting apparatus according to the present invention can reduce the glare by increasing the indirect light, it is possible to obtain the intended light pattern using the arrayed pattern of the reflectors. The optical semiconductor-based lighting apparatus according to the present invention can be usefully used for mood lighting, interior lighting or decoration lighting.

Other advantages or effects of the present invention will be understood from the description of the following examples.

1 is a plan view showing an optical semiconductor-based lighting apparatus according to an embodiment of the present invention.
FIG. 2 is a sectional perspective view of the optical semiconductor based lighting apparatus shown in FIG. 1. FIG.
3 is a cross-sectional view for explaining the operation of the optical semiconductor-based lighting device shown in FIG.
4 is a view for explaining various applications of the present invention that can be applied to implement various light patterns of the present invention.
5 is a diagram for explaining various applications of the present invention that can be applied to adjust the characteristics of light.
6 is a view for explaining an application example of the present invention with respect to the arrangement of the reflector.
7 is a cross-sectional perspective view showing an optical semiconductor based lighting apparatus according to another embodiment of the present invention.
8 is a cross-sectional view for explaining the operation of the optical semiconductor-based lighting device shown in FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, and the like of the components may be exaggerated for convenience. Like numbers refer to like elements throughout.

1 is a plan view showing an optical semiconductor-based lighting apparatus according to an embodiment of the present invention, Figure 2 is a cross-sectional perspective view of the optical semiconductor-based lighting device shown in Figure 1, Figure 3 and Figures 1 and 2 Sectional view for explaining the operation of the optical semiconductor-based lighting device shown in.

1 to 3, the optical semiconductor based lighting apparatus 1 according to an embodiment of the present invention includes a plate-shaped base 10, a plurality of reflectors 20, and a plurality of semiconductor optical devices 30. ).

A plurality of reflectors 20 are arranged radially or radially from the center outwards on the base 10. The optical semiconductor based illumination device 1 includes a plurality of light reflection spaces 40 (shown in FIGS. 2 and 3) partitioned by the plurality of reflectors 20.

As best shown in FIGS. 2 and 3, the plurality of light reflecting spaces 40 are located partitioned between two neighboring reflectors 20, 20. Furthermore, the light reflection space may be located outside the outermost reflector 20. The plurality of reflectors 20 have a substantially annular shape when viewed from above and gradually increase in diameter from the center toward the outside. That is, the plurality of reflectors 20 have the same center and form concentric circles of different sizes. Accordingly, the plurality of light reflection spaces 40 also have annular shapes with different diameters.

In addition, the plurality of reflectors 20 has a shape in which one side is open, more specifically, a cross-sectional shape in which a side is open toward the outside from a position crossing the base 10. In the present embodiment, the plurality of reflectors 20 are open to one side while all have the same cross-sectional shape. Due to this cross-sectional shape, the plurality of reflectors 20 are formed with an inner reflecting surface 20a facing the base 10 and an inner reflecting surface 20b facing upward.

A light emission gate 42 may be formed on the light reflection space 40. An arcuate cross section of the reflector 20 increases the light path distance from the bottom of the light reflecting space 40 to the light emitting gate 42. This increases the amount of light reflection in the light reflection space 40. In addition, the lower portion of the light reflection space 40 is blocked by the base 10, the base 10 preferably includes a reflecting surface to reflect the light reflected back to the front again.

The plurality of reflectors 20 may be made of a resin or a metal material, and if the reflector 20 is made of a resin material, by molding molding by mixing an additive material for controlling reflectivity or transmittance with a transparent resin material It is possible to make the reflector 20 with the intended reflectivity and transmittance.

Each of the plurality of semiconductor optical devices 30 is disposed outside the light reflection space 40 or the outermost reflector 20 between neighboring reflectors 20. The semiconductor optical devices 30 are mounted on the base 10, and are arranged in an annular shape in each of the plurality of light reflection spaces 40. Thus, the annular array of semiconductor optical elements 30 in the light reflecting space 40 (see FIG. 1) surrounds the inner reflecting surface 20a of the reflector 20 located inside, and the other reflector located outside of the reflector 20. It is surrounded by an outer reflecting surface 20b of 20. The base 10 may include a printed circuit board (PCB) on which electrode patterns for supplying power to the semiconductor optical device 30 are formed.

A substantial amount of light supplied to the light reflection space 40 is reflected at least once on the reflecting surfaces 20a and 20b in the light reflection space 40 and then emitted upward through the light emission gate 42. do. Some light may be emitted upward through the light emission gate 42 without passing through the reflective surfaces 20a and 20b.

A portion of the semiconductor optical device 30 may be covered by the internal reflective surface 20a of the reflector 20 (indicated by hidden lines in FIG. 1). Depending on the extent to which the semiconductor optical device 30 is covered by the internal reflecting surface 20a and further, the relative position of the semiconductor optical device 30 with respect to the reflector 20, the light emitting gate 42 may be opened. Through this, various characteristics of light emitted to the outside are controlled. For example, when the semiconductor optical device 30 is largely covered by the internal reflection surface 20a, the semiconductor optical device 30 is less exposed through the light emission gate 42, which is in the light reflection space 40. More light is reflected and increases the amount of light emitted as indirect light through the light emitting gate 42.

Since the plurality of light emitting gates 42 have annular shapes of different sizes and are arranged in the form of concentric circles, the light emitted through the plurality of light emitting gates 42 is formed of annular light bands having different sizes. Form a pattern.

Light emitted through the semiconductor device 30 is emitted to the front through the light emission gate 42 while being reflected by at least one of the two reflection surfaces between the internal reflection surface 20a and the external reflection surface 20b. Since the light reflected by the inner reflection surface 20a is mostly directed to the outer reflection surface 20b, the reflection function of the inner reflection surface 20a is further required. On the other hand, since the light reflected by the outer reflecting surface 20b is emitted through the light emitting gate 42 more than the light reflected by the inner reflecting surface 20a, the light is reflected on the outer reflecting surface 20b. It may be more advantageous to have a material that diffuses light and / or a material that converts wavelengths of light.

A diffuser or a wavelength converting material may be located on the outer reflecting surface 20b. Referring to FIG. 2, a diffusing material and / or a wavelength converting material, more preferably a remote phosphor on the outer reflecting surface 20b. A coating layer 201 is formed that includes. The coating layer 201 may be a laminate structure of two or more layers including a diffusion material layer and a remote phosphor layer. Alternatively, the coating layer 201 may be one layer including at least one of a diffusion material and a remote phosphor.

Within the annular array of semiconductor photons 30 in each light reflecting space 40, red photonic devices, green photoelectric devices, and blue optical devices may be disposed adjacent to produce white light. This R, G, B arrangement can be repeated in the array. By operating in a red photo device, a green photo device, and a blue photo device mode, white light can be generated in the light reflection space 40 to be emitted through the light emission gate 42, and the semiconductor photo devices 30 can be individually operated. It can emit light of a desired color.

4 is a view for explaining various applications of the present invention that can be applied to implement various light patterns of the present invention.

 Referring to FIG. 4, an illumination device for generating various light emission patterns may be implemented according to the planar shape of each of the plurality of reflectors 20 and the planar shape of the light reflection space and the light emission gate 42. Figure 4 (a) shows a lighting device that implements a light emitting pattern including a plurality of square light band, Figure 4 (b) shows a lighting device that can implement a light emitting pattern comprising a plurality of hexagonal light band, 4 (c) shows an illumination device capable of implementing a light emitting pattern including a plurality of cross-shaped light bands. In addition, an illumination device that creates various light patterns according to the geometric planar shape of the reflectors 20 and the light emission gate 42 may be implemented.

5 is a view for explaining various applications of the present invention that can be applied to adjust the characteristics of the light.

First, referring to FIG. 5A, an optical semiconductor-based lighting device 1 in which optical characteristics are controlled by adjusting the height of the upper side of the reflector 20 with respect to the semiconductor optical device 30 is shown. The optical semiconductor-based lighting device 1 is provided with a hole for guiding the vertical height adjustment of each of the plurality of reflectors 20, for example, in the base 10, and each of the reflectors 20 in a vertical height adjustment state. It can be implemented by providing a fastening means (not shown) for fixing the.

Referring to FIGS. 5B and 5C, an optical semiconductor-based lighting device 1 in which optical characteristics are controlled by adjusting a horizontal distance of the reflector 20 with respect to the semiconductor optical device 30 is shown. This optical semiconductor based lighting device 1 can be implemented, for example, by replacing reflectors 20 of different diameters or widths. When the reflector 20 has an annular structure, since the horizontal movement of the reflector 20 is difficult, the horizontal distance of the reflector 20 to the semiconductor optical device 30 is adjusted by replacing the reflector 20. When the reflector 20 is arc-shaped or straight or not fully curved, the horizontal distance of the reflector 20 to the semiconductor optical device 30 may be adjusted by the horizontal movement of the reflector 20.

In particular, as shown in FIG. 5C, the position of the reflector 20 may be changed so that the reflector 20 or its internal reflecting surface entirely covers the semiconductor optical element 30. have. In this case, all of the light emitted as direct light without passing through the reflector 20 may be reflected to the reflector 20 and then emitted to the outside. This is very useful when it is necessary to strictly reflect the glare caused by the light by reflecting the entire light from the semiconductor optical device 30 by the reflector 20 and then to the outside.

Considering the optical directivity of the semiconductor optical device 30, in addition to the reflector 20 covering the semiconductor optical device 30, the reflector 20 is all within the direction angle range of the semiconductor optical device 20 It may also be considered to cover the light path.

6 is a view for explaining an application example of the present invention with respect to various arrangements of the reflector.

In the embodiment described above, the inner reflective surface 20a of all the reflectors 20 is all facing outward and the inner reflective surface 20a of all the reflectors 20 is all facing outward, but the application shown in FIG. In the example, the inner reflecting surfaces 20a of all the reflectors 20 are all centered and the outer reflecting surfaces 20b of all the reflectors 20 are arranged outward. Additionally, a reflector 20 'is added to the center of the array of reflectors 20, with the inner reflecting surface formed over the full 360 degree orientation without the outer reflecting surface. This reflector 20 'can also be applied to the lighting apparatus of the above-described embodiment as shown in Figs.

In addition, an array of reflectors arranged such that inner reflecting surfaces and outer reflecting surfaces of neighboring reflectors face each other may also be applied to the present invention.

7 is a cross-sectional perspective view showing an optical semiconductor based lighting apparatus according to another embodiment of the present invention, Figure 8 is a cross-sectional view for explaining the operation of the optical semiconductor based lighting apparatus shown in FIG.

As shown in FIGS. 7 and 8, the optical semiconductor based illumination device 1 according to the present embodiment, like the previous embodiment, has a plate-shaped base 10, a plurality of reflectors 20, and a plurality of semiconductor lights. Element 30.

As in the previous embodiment, the plurality of reflectors 20 are arranged radially or radially from the center toward the outside as in the previous embodiment, and are arranged by the plurality of reflectors 20 in a plurality of light reflecting spaces. 40 is partitioned.

Each of the plurality of reflectors 20 includes orifice-shaped light transmission holes 202a, 202b, and 202c, and the light transmission holes 202a, 202b, or 202c are formed in plural reflectors 20, The plurality of light transmission holes 202a, 202b or 202c are arranged in an annular shape along the circumference of the reflector 20. Also, each of the light transmission holes 202a, 202b or 202c formed in one reflector 20 coincides with the corresponding light transmission holes 202a, 202b or 202c of the reflectors 20 neighboring to the outside and the inside. Is formed. From the outermost reflector 20 to the innermost reflector 20, the light transmission holes 202a, 202b, and 202c run continuously.

The plurality of semiconductor optical devices 30 are annularly arranged to surround the outermost reflector 20. Each semiconductor optical device 30 irradiates light in the lateral direction, and further, is disposed to irradiate light into the light transmission holes 202a, 202b, and 202c of the outermost reflector 20. Light passes from the light transmission hole 202a of the outermost reflector 20 to the light transmission holes 202b and 202c provided in the other inner reflector 20 in order. The semiconductor optical device 30 may be, for example, an LED package of a side view type.

 Light that has not passed through the light transmission holes 202a, 202b, or 202c of the reflector 20 is supplied into the light reflection space 40. Since the outer light reflection space 40 is larger than the inner light reflection space 40, the amount of light required in the outer light reflection space 40 is greater than the amount of light required in the inner light reflection space 40. Therefore, the light transmission holes 202a, 202b, and 202c gradually decrease in size from the outermost reflector 20 to the innermost reflector 20.

Light supplied into the plurality of light reflection spaces 40 through the transfer holes 202a, 202b, and 202c of each reflector 20 from the semiconductor optical devices 30 disposed outside is transferred to the corresponding light reflection space 40. After reflecting to the reflecting surface (20a, 20b) of the reflector (20, 20) in the neighborhood is emitted forward through the light emission gate 42 above the light reflection space (40). Therefore, according to the present exemplary embodiment, light may be supplied into the light reflection space 40 disposed inside only the semiconductor optical devices 30 disposed outside.

Other configurations, including the shape and arrangement of the reflectors 20, may follow the same or similar configurations of the foregoing embodiments or previous applications. In order to avoid duplication, descriptions of the same or similar configurations as the above embodiments or applications have been omitted in order to avoid duplication.

10: base 20: reflector
20a: internal reflective surface 20b: external reflective surface
202a, 202b, and 202c: light transmitting holes 30 semiconductor optical elements
40: light reflection space 42: light emission gate

Claims (16)

Base;
Annular reflectors arranged on the base;
An annular light reflection space partitioned between neighboring reflectors;
Semiconductor photons for supplying light to the light reflection space; And
And a light emitting gate formed over the light reflecting spaces. The semiconductor optical device of claim 1, wherein the semiconductor optical devices are mounted on the base to form a plurality of annular arrays, and the semiconductor optical devices of each of the annular arrays surround an reflector located inside each of the light reflection spaces. Optical semiconductor based lighting device. The optical semiconductor based illumination device of claim 2, wherein at least one of the reflectors is disposed to partially cover an adjacent semiconductor optical device.  The optical semiconductor based illumination device of claim 2, wherein at least one of the reflectors is disposed to entirely cover an adjacent semiconductor optical device. The method of claim 1, wherein at least one of the reflectors is formed with a light transmission hole, and at least one of the semiconductor photons transfers light from one light reflection space to another light reflection space through the light transmission hole. Optical semiconductor based lighting device, characterized in that arranged to. The semiconductor light emitting device of claim 1, wherein the plurality of semiconductor optical devices are arranged in an annular shape, and each of the reflectors has a light transmitting hole for sequentially transmitting light from the semiconductor photons to the plurality of light reflection spaces. Optical semiconductor based lighting apparatus, characterized in that formed. The optical semiconductor based illuminating device according to claim 6, wherein the size of the light transmitting hole gradually decreases toward the reflector away from the reflector located near the semiconductor photons. The optical semiconductor based illuminating device according to claim 1, wherein each of the reflectors has an open cross-sectional structure on one side to include an inner reflecting surface surrounding the light reflecting space inwardly and an outer reflecting surface opposite thereto.  The optical semiconductor based illuminating device according to claim 1, wherein the reflectors are disposed such that inner reflecting surfaces face the same direction toward the outside or the center. The optical semiconductor based illumination device of claim 1, wherein the neighboring reflectors face each other with an inner reflecting surface and an outer reflecting surface. The optical semiconductor based illumination device of claim 8, wherein the external reflection surface comprises a diffusion material or a remote phosphor. The optical semiconductor based illumination device of claim 1, wherein the base includes a reflective surface. The optical semiconductor based lighting apparatus of claim 1, wherein each of the plurality of reflectors is capable of height adjustment up and down on the base. The optical semiconductor based lighting apparatus of claim 1, wherein the base is configured to replace the reflector with a reflector having a different size. Base;
A reflector installed on the base;
A first space and a second space separated by the reflector;
A semiconductor optical element disposed in the first space; And
A light emission gate formed on the second space;
The reflector is an optical semiconductor-based illumination device, characterized in that the light transmission hole for transmitting the light of the first space to the second space is formed. Base;
A first reflector and a second reflector mounted on the base;
A first space, a second space, and a third space sequentially partitioned by the first reflector and the second reflector;
A semiconductor optical element disposed in the first space; And
A light emission gate formed on the second space and the third space;
The first reflector is formed with a first light transmission hole for transmitting the light of the first space to the second space,
The second reflector is formed with a second light transmission hole for transmitting the light of the second space to the third space, characterized in that the size of the first light transmission hole is larger than the size of the second light transmission hole. Optical semiconductor based lighting device.
KR1020110057665A 2011-06-14 2011-06-14 Optical semiconductor based lighting apparatus KR20120138299A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101526502B1 (en) * 2012-10-24 2015-06-05 (주)엔티시 Diffusion distribution type led lamp

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101526502B1 (en) * 2012-10-24 2015-06-05 (주)엔티시 Diffusion distribution type led lamp

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