KR20120138012A - A method of forming oxide thin film, a making method of thin film transistor and a thin film transistor - Google Patents
A method of forming oxide thin film, a making method of thin film transistor and a thin film transistor Download PDFInfo
- Publication number
- KR20120138012A KR20120138012A KR1020110057252A KR20110057252A KR20120138012A KR 20120138012 A KR20120138012 A KR 20120138012A KR 1020110057252 A KR1020110057252 A KR 1020110057252A KR 20110057252 A KR20110057252 A KR 20110057252A KR 20120138012 A KR20120138012 A KR 20120138012A
- Authority
- KR
- South Korea
- Prior art keywords
- precursor solution
- thin film
- substrate
- solvent
- precursor
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 123
- 238000000034 method Methods 0.000 title claims description 57
- 239000002243 precursor Substances 0.000 claims abstract description 195
- 239000000758 substrate Substances 0.000 claims abstract description 78
- 238000004519 manufacturing process Methods 0.000 claims abstract description 54
- 239000012212 insulator Substances 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims description 68
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 39
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 36
- 239000002904 solvent Substances 0.000 claims description 35
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 33
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 33
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 26
- 229910007717 ZnSnO Inorganic materials 0.000 claims description 25
- 239000002798 polar solvent Substances 0.000 claims description 23
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical group CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 22
- 239000012454 non-polar solvent Substances 0.000 claims description 22
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 20
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 20
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 20
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 claims description 18
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 18
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 16
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 claims description 10
- 229910021529 ammonia Inorganic materials 0.000 claims description 10
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 9
- 229910005265 GaInZnO Inorganic materials 0.000 claims description 9
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 8
- BLBNEWYCYZMDEK-UHFFFAOYSA-N $l^{1}-indiganyloxyindium Chemical compound [In]O[In] BLBNEWYCYZMDEK-UHFFFAOYSA-N 0.000 claims description 7
- 239000003381 stabilizer Substances 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 2
- WHRNULOCNSKMGB-UHFFFAOYSA-N tetrahydrofuran thf Chemical compound C1CCOC1.C1CCOC1 WHRNULOCNSKMGB-UHFFFAOYSA-N 0.000 claims 3
- 229910007694 ZnSnO3 Inorganic materials 0.000 claims 2
- 239000000243 solution Substances 0.000 description 144
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 24
- 239000011787 zinc oxide Substances 0.000 description 12
- 239000007769 metal material Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- YZZFBYAKINKKFM-UHFFFAOYSA-N dinitrooxyindiganyl nitrate;hydrate Chemical compound O.[In+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O YZZFBYAKINKKFM-UHFFFAOYSA-N 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004246 zinc acetate Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 2
- 150000003755 zirconium compounds Chemical class 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- BSIUFWMDOOFBSP-UHFFFAOYSA-N 2-azanylethanol Chemical compound NCCO.NCCO BSIUFWMDOOFBSP-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- HTHVSMTZYMMWKO-UHFFFAOYSA-N formamide Chemical compound NC=O.NC=O HTHVSMTZYMMWKO-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Oxide thin film manufacturing method according to an embodiment of the present invention includes the step of applying a first precursor solution on the substrate, and the second precursor solution on the substrate, the first precursor solution by heat-treating the substrate And an oxide insulator thin film from said second precursor solution.
Description
One embodiment of the present invention relates to the field of semiconductors, and more particularly, to a method of manufacturing an oxide thin film, a method of manufacturing a thin film transistor, and a thin film transistor using the same.
Recently, large-area display, ultra high definition (UHD), and high speed driving have been progressed. Conventional amorphous Si semiconductor devices (Amorphous Si TFT) has a low mobility (0.5 cm 2 / Vs or less), there is a limit to the implementation using this. Accordingly, oxide thin film transistors that exhibit an amorphous phase and have high mobility (5-10 cm 2 / Vs or more) have attracted attention as an alternative to amorphous silicon.
The oxide semiconductor is deposited using a deposition process such as sputtering, plasma enhanced chemical vapor deposition (PECVD). However, the equipment used in such a process requires a vacuum environment, which is disadvantageous in terms of cost competitiveness. In order to compensate for this, a solution manufacturing process such as spin coating and inkjet method has been proposed. The solution preparation process includes a post-heat treatment process for a period of time at a temperature of several hundred degrees Celsius for evaporating the solvent and additives contained in the sol-gel and forming chemical bonds of the thin film. This post-heat treatment process increases the processing time, thereby reducing the production yield of the thin film transistor and increasing the processing cost as well as changing the properties of the previously deposited thin film.
However, the post-heat treatment process for depositing the oxide thin film has a problem of increasing the processing time, reducing the production yield of the thin film transistor and increasing the processing cost as well as changing the properties of the previously deposited thin film.
An oxide thin film manufacturing method according to an embodiment of the present invention includes the step of applying a first precursor solution on a substrate, a second precursor solution on the substrate, and heat-treating the substrate from the first precursor solution An oxide insulator thin film is formed from an oxide semiconductor thin film by the second precursor solution.
The first precursor solution and the second precursor solution may be prepared using solvents having different polarities.
The solvent having different polarities includes a polar solvent and a nonpolar solvent, and the polar solvent is at least one of acetic acid, ammonia, water, methanol, ethanol, 2-methoxyethanol, and formamide. In one embodiment, the nonpolar solvent may include at least one of acetone, benzene, chloroform, dimethylsulfoxide, dioxane, dimethylformamide, and tetrahydrofuran.
The first precursor solution is ZrInZnO, HfInZnO, HfO 2 , TiO 2 , At least one of MgZnO and TiSrO 3 is used as a precursor material, and the second precursor solution is InGaZnO, ZnO, InZnO, AlInZnO, ZnO, InGaZnO 4 , ZnInO, ZnSnO, In 2 O 3 , Ga 2 O 3 , GaInZnO, SnO 2 , WO 3 , Ta 2 O 5 , In 2 O 3 SnO 2 , ZnSnO 3 , ZnSnO 4 , CdZnO, CuAlO 2 , CuGaO 2 and At least any one of Nb 2 O 5 may be used as the precursor material.
The heat treatment may remove the solution stabilizer or the organic material to form an oxide thin film.
Oxide thin film manufacturing method according to an embodiment of the present invention is a first pre-baking step of heat-treating the substrate coated with the first precursor solution, the second heat treatment of the substrate coated with the second precursor solution And further comprising two pre-heat treatment steps, wherein the first precursor solution and the second precursor solution are prepared using solvents of the same polarity.
The solvent includes a polar solvent and a non-polar solvent, the polar solvent includes at least one of acetic acid, ammonia, water, methanol, ethanol, 2-methoxyethanol, formamide, The nonpolar solvent may include at least one of acetone, benzene, chloroform, dimethylsulfoxide, dioxane, dimethylformamide, and tetrahydrofuran.
The first pre-heat treatment step and the second pre-heat treatment step may be performed at 150 ℃ to 300 ℃.
An oxide thin film manufacturing method according to an embodiment of the present invention may include applying a precursor solution having a polarity on a substrate, applying a precursor solution having a nonpolarity on the substrate, and heat-treating the substrate.
The polar precursor solution is prepared using a polar solvent, the polar solvent is at least one of acetic acid, ammonia, water, methanol, ethanol, 2-methoxyethanol, formamide (formamide) Include. The nonpolar precursor solution is prepared using a nonpolar solvent, wherein the nonpolar solvent is at least in acetone, benzene, chloroform, dimethylsulfoxide, dioxane, dimethylformamide, and tetrahydrofuran. It may include any one.
The precursor solution having the polarity is InGaZnO, ZnO, InZnO, AlInZnO, ZnO, InGaZnO 4 , ZnInO, ZnSnO, In 2 O 3 , Ga 2 O 3 , GaInZnO, SnO 2 , WO 3 , Ta 2 O 5 , In2O 3 SnO 2 , ZnSnO 3, ZnSnO 4 , CdZnO, CuAlO 2 , CuGaO 2 and At least one of Nb 2 O 5 is used as a precursor material, and the precursor solution having no polarity is ZrInZnO, HfInZnO, HfO 2 , TiO 2 , At least one of MgZnO and TiSrO 3 may be used as the precursor material.
The nonpolar precursor solution is InGaZnO, ZnO, InZnO, AlInZnO, ZnO, InGaZnO 4 , ZnInO, ZnSnO, In 2 O 3 , Ga 2 O 3 , GaInZnO, SnO 2 , WO 3 , Ta 2 O 5 , In2O 3 SnO 2 , ZnSnO 3, ZnSnO 4 , CdZnO, CuAlO 2 , CuGaO 2 and At least one of Nb 2 O 5 is used as a precursor material, and the precursor solution having the polarity is ZrInZnO, HfInZnO, HfO 2 , TiO 2 , At least one of MgZnO and TiSrO 3 may be used as the precursor material.
In a method of manufacturing a thin film transistor according to an embodiment of the present invention, forming a gate electrode on a substrate, applying a first precursor solution on the substrate, applying a second precursor solution on the substrate, and heat treating the substrate. And forming a source-drain electrode on the substrate, and forming an oxide insulator thin film from the first precursor solution and an oxide semiconductor thin film from the second precursor solution.
The first precursor solution and the second precursor solution may be prepared using solvents having different polarities. The solvent having different polarities includes a polar solvent and a nonpolar solvent, and the polar solvent is at least one of acetic acid, ammonia, water, methanol, ethanol, 2-methoxyethanol, and formamide. In one embodiment, the nonpolar solvent may include at least one of acetone, benzene, chloroform, dimethylsulfoxide, dioxane, dimethylformamide, and tetrahydrofuran.
The first precursor solution is ZrInZnO, HfInZnO, HfO 2 , TiO 2 , At least one of MgZnO and TiSrO 3 is used as a precursor material, and the second precursor solution is InGaZnO, ZnO, InZnO, AlInZnO, ZnO, InGaZnO 4 , ZnInO, ZnSnO, In 2 O 3 , Ga 2 O 3 , GaInZnO, SnO 2 , WO 3 , Ta 2 O 5 , In 2 O 3 SnO 2 , ZnSnO 3 , ZnSnO 4 , CdZnO, CuAlO 2 , CuGaO 2 and At least any one of Nb 2 O 5 may be used as the precursor material.
In a method of manufacturing a thin film transistor according to an embodiment of the present invention, a first pre-baking step of heat-treating the substrate coated with the first precursor solution and a second heat treatment of the substrate coated with the second precursor solution are performed. It further comprises a pre-heat treatment step, wherein the first precursor solution and the second precursor solution is prepared using a solvent of the same polarity.
The first pre-heat treatment step and the second pre-heat treatment step may be performed at 150 ℃ to 300 ℃.
The oxide semiconductor thin film may form a channel layer, and the oxide insulator thin film may form a gate insulating layer.
According to the oxide thin film manufacturing method according to an embodiment of the present invention can reduce the process time and cost according to the heat treatment process shortened.
According to the method of manufacturing the thin film transistor according to the exemplary embodiment of the present disclosure, the performance of the device may be improved by improving the interface characteristics between the channel layer and the gate insulating layer.
1 is a flowchart illustrating a method of manufacturing an oxide thin film according to an embodiment of the present invention.
Figure 2 shows the process of the oxide thin film manufacturing method according to an embodiment of the present invention.
3 is a flowchart illustrating a method of manufacturing an oxide thin film according to an embodiment of the present invention.
Figure 4 shows the process of the oxide thin film manufacturing method according to an embodiment of the present invention.
5 to 9 illustrate a method of manufacturing a thin film transistor according to an embodiment of the present invention and a thin film transistor manufactured using the same.
The embodiments may be embodied in many different forms and should not be construed as limited to the aspects set forth herein. Rather, the above aspects make the embodiments more thorough and complete, and fully convey the scope of the embodiments to those skilled in the art.
Throughout the specification, when a part is said to "include" a certain component, it means that it can further include other components, without excluding other components unless otherwise stated. And when a part of a layer, film, area, plate, etc. is said to be "on" another part, this includes not only the case where the other part is "right over" but also the other part in the middle. Conversely, when a part is "directly over" another part, it means that there is no other part in the middle. In addition, when a part is formed "overall" on another part, it includes not only being formed in the whole surface of another part but also not formed in a part of edge.
Also, if terms referring to first, second, etc. can be used herein to describe various components, it will be understood that the components are not limited to these terms. These terms are only used to distinguish one component from another.
An embodiment of the present invention relates to a method for manufacturing an oxide thin film, a method for manufacturing a thin film transistor, and a thin film transistor manufactured using the same.
Oxide thin film manufacturing method according to an embodiment of the present invention may be prepared using a solution process, for example, may be used a sol-gel (sol-gel) process. Such a solution process has an advantage that it is easy to process a large area and can be applied to a flexible substrate.
In addition, the oxide thin film formed by the oxide thin film manufacturing method according to an embodiment of the present invention may form a channel layer and a gate insulating layer of the thin film transistor.
According to the oxide thin film manufacturing method according to an embodiment of the present invention it is possible to form the channel layer and the gate insulating layer of the thin film transistor through one post-heat treatment process.
When preparing the precursor solution for forming the channel layer and the precursor solution for forming the gate insulating layer using a solvent having the same polarity, it may be possible by using a pre-heat treatment process.
On the other hand, when the precursor solution for forming the channel layer and the precursor solution for forming the gate insulating layer using a solvent having a different polarity, there is an advantage that the pre-heat treatment process can be omitted.
Hereinafter, an oxide thin film manufacturing method and a thin film transistor manufacturing method according to an embodiment of the present invention will be described in more detail.
First, an oxide thin film manufacturing method according to an embodiment of the present invention will be described in detail with reference to the drawings.
1 is a flow chart showing each step of the oxide thin film manufacturing method according to an embodiment of the present invention. As shown in FIG. 1, the method of manufacturing an oxide thin film according to an exemplary embodiment of the present invention includes preparing a first precursor solution (S101), preparing a second precursor solution (S102), and a first precursor on a substrate. Applying the solution (S103), the first pre-baking step (S104), applying the second precursor solution on the substrate (S105), the second pre-heat treatment step (S106), post- It may be made by including a heat treatment step (S107).
Here, the first precursor solution may be a precursor solution for forming a gate insulating layer of the thin film transistor, and the second precursor solution may be a precursor solution for forming a channel layer of the thin film transistor.
In the oxide thin film manufacturing method according to an embodiment of the present invention shown in Figure 1, the first precursor solution and the second precursor solution may be prepared using a solvent having the same polarity.
By way of example, the first precursor solution and the second precursor solution may be prepared using a polar solvent. The polar solvent may include, but is not limited to, at least one of acetic acid, ammonia, water, methanol, ethanol, 2-methoxyethanol, and formamide.
In addition, the first precursor solution and the second precursor solution may be prepared using a nonpolar solvent. The nonpolar solvent may include, but is not limited to, at least one of acetone, benzene, chloroform, dimethylsulfoxide, dioxane, dimethylformamide, and tetrahydrofuran.
On the other hand, the first precursor solution is a precursor material ZrInZnO, HfInZnO, HfO 2 , TiO 2 , At least one of MgZnO and TiSrO 3 may be used. The second precursor solution is a precursor material of InGaZnO, ZnO, InZnO, AlInZnO, ZnO, InGaZnO 4 , ZnInO, ZnSnO, In 2 O 3 , Ga 2 O 3 , GaInZnO, SnO 2 , WO 3 , Ta 2 O 5 , In2O 3 SnO 2 , ZnSnO 3, ZnSnO 4 , CdZnO, CuAlO 2 , CuGaO 2 and At least one of Nb 2 O 5 can be used.
The step (S103) of applying the first precursor solution on the substrate may include screen-printing, spin-coating, dip-coating, spraying, and roll-to-roll processing. to-roll or ink-jet may be used, but is not limited thereto.
The substrate may be formed of an insulating material such as glass, plastic, silicon, or synthetic resin. For example, a transparent substrate such as a glass substrate may be used.
In the first pre-heat treatment step S104, the first precursor solution coated on the substrate may be formed in a gel form. The first pre-heat treatment step S104 may be a step of heating the substrate to 150 ° C to 300 ° C. This is to prevent the first precursor solution and the second precursor solution from mixing because the first precursor solution and the second precursor solution are prepared using a solvent having the same polarity. In addition, the first pre-heat treatment step S104 may evaporate a solvent or the like.
Applying the second precursor solution on the substrate (S105) is screen-printing, spin-coating, dip-coating, spraying, roll-to-roll process (roll- to-roll or ink-jet may be used, but is not limited thereto.
The second pre-heat treatment step S106 may be a step of heating the substrate coated with the second precursor solution to 150 ° C to 300 ° C. In the second pre-heat treatment step S106, the second precursor solution coated on the substrate may be formed in a gel form. In addition, the second pre-heat treatment step may be a step for evaporating a solvent or the like.
The post-heat treatment step S107 may be a step for forming an oxide thin film from the first precursor solution and the second precursor solution. Through the post-heat treatment step (S107) to have the characteristics of the thin film, it is possible to remove the solution additives or organic matter. In addition, the post-heat treatment step S107 may heat-treat the substrate at a temperature of 300 ° C to 500 ° C. On the other hand, it is noted that the temperature for heat treatment of the substrate can be changed according to the type or characteristics of the precursor solution. The post-heat treatment step S107 may use a furnace, a hot-plate or a laser, but is not limited thereto.
As described above, the oxide thin film manufacturing method according to an embodiment of the present invention can be prepared using a solvent having the same polarity of the first precursor solution and the second precursor solution. In this case, the second precursor solution may be applied onto the first precursor solution by passing through the first pre-heat treatment step S103. The first precursor solution and the second precursor solution applied on the substrate may form an oxide thin film through the post-heat treatment step S107.
Figure 2 shows the process of the oxide thin film manufacturing method according to an embodiment of the present invention. As shown in FIG. 2, the first precursor solution is applied onto the substrate (a), the substrate is heat treated through the first pre-heat treatment step (b), and the second precursor solution is applied onto the substrate (c), The substrate may be heat-treated through the second pre-heat treatment step (d), and the oxide thin film may be formed through the post-heat treatment step (d).
Meanwhile, the inventors of the present invention have confirmed that the first pre-heat treatment step and the second pre-heat treatment step can be omitted when the first precursor solution and the second precursor solution are prepared using a solvent having a different polarity. In this case, the overall process time and cost can be further shortened. In addition, when the oxide thin film is manufactured as a channel layer and a gate insulating layer of the thin film transistor, respectively, the interface characteristics may be further improved.
Hereinafter, the case where the first precursor solution and the second precursor solution are prepared using a solvent having different polarity will be described in detail. The same content will be briefly described to avoid repetition.
3 is a flowchart illustrating a method of manufacturing an oxide thin film according to an embodiment of the present invention. As shown in FIG. 3, the method of manufacturing an oxide thin film according to an embodiment of the present invention includes preparing a first precursor solution (S301), preparing a second precursor solution (S302), and a first precursor on a substrate. It may include the step of applying a solution (S303), the step of applying a second precursor solution on the substrate (S304), the heat treatment step (S305).
Here, the first precursor solution may be a precursor solution for forming a gate insulating layer of the thin film transistor, and the second precursor solution may be a precursor solution for forming a channel layer of the thin film transistor.
In the oxide thin film manufacturing method according to an embodiment of the present invention shown in Figure 3, the first precursor solution and the second precursor solution can be prepared using a solvent having a different polarity.
By way of example, the first precursor solution may be prepared using a polar solvent. The polar solvent may include, but is not limited to, at least one of acetic acid, ammonia, water, methanol, ethanol, 2-methoxyethanol, and formamide. The second precursor solution can be prepared using a nonpolar solvent. The nonpolar solvent may include, but is not limited to, at least one of acetone, benzene, chloroform, dimethylsulfoxide, dioxane, dimethylformamide, and tetrahydrofuran.
On the other hand, when the first precursor solution is prepared using a nonpolar solvent, the second precursor solution may be prepared using a polar solvent.
As described above, by mixing the first precursor solution and the second precursor solution with a solvent having a different polarity, the mixing of the first precursor solution and the second precursor solution on the substrate without the pre-heat treatment process is performed. You can prevent it.
Next, the heat treatment step S305 will be described. The heat treatment step S305 may be a step for forming an oxide thin film from the first precursor solution and the second precursor solution. Through the heat treatment step (S305) may have the characteristics of the thin film, it may remove the solution additives or organic matter. In addition, the heat treatment step (S305) may heat the substrate at a temperature of 300 ℃ to 500 ℃. On the other hand, it is noted that the temperature for heat treatment of the substrate can be changed according to the type or characteristics of the precursor solution. The heat treatment step S305 may use a furnace, a hot plate or a laser, but is not limited thereto.
Figure 4 shows the process of the oxide thin film manufacturing method according to an embodiment of the present invention. As shown in FIG. 4, an oxide thin film may be formed by applying a first precursor solution on a substrate (a), applying a second precursor solution on the substrate (b), and heat treating (c).
That is, compared to FIG. 2, the first pre-heat treatment step and the second pre-heat treatment step may be omitted in FIG. 4. This can further shorten the heat treatment process time and reduce the process cost. In addition, the interfacial characteristics of the thin film transistor manufactured by using the manufactured oxide thin film can be further improved.
5 to 9 illustrate a method of manufacturing a thin film transistor according to an embodiment of the present invention and a thin film transistor manufactured using the same.
5 to 9 exemplarily illustrate a lower gate method. The lower gate structure is a structure generally used in AMLCD, etc., and has an advantage of reducing mass production cost by easily reducing a mask. However, the thin film transistor manufacturing method and the thin film transistor manufactured by using the same according to an embodiment of the present invention are not limited thereto, and may be applied to a thin film transistor having a top gate type and various structures.
5 to 9, the thin film transistor according to the exemplary embodiment of the present invention may include forming a gate electrode on a substrate (FIG. 5), applying a first precursor solution on the substrate (FIG. 6), And applying a second precursor solution on the substrate (FIG. 7), heat treating the substrate (FIG. 8), and forming a source-drain electrode on the substrate (FIG. 9).
Forming a gate electrode on the substrate (FIG. 5) may use a sputtering method as an example. The
Next, the step of applying the
Here, the first precursor solution may form the gate insulating layer 520 'of the thin film transistor, and the second precursor solution may form the channel layer 530' of the thin film transistor.
Therefore, the channel layer and the gate insulating layer of the thin film transistor may be simultaneously formed through one post-heat treatment process (FIG. 8). As a result, the heat treatment process time can be shortened and the process cost can be reduced. In addition, the interface characteristics of the thin film transistor to be manufactured can be improved.
Next, forming a source-drain electrode on the substrate (FIG. 9) may use a sputtering method. The source-
Hereinafter, a method of manufacturing an oxide thin film and a method of manufacturing a thin film transistor according to an embodiment of the present invention will be described in more detail with reference to Examples 1 and 2.
[Example 1]
Example 1 relates to a method of preparing a first precursor solution and a second precursor solution using a solvent having the same polarity, coating a substrate to form an oxide thin film, and a method of manufacturing a thin film transistor using the same.
A sol-gel method was used to form an oxide thin film on a substrate. As a solvent of the first precursor solution and the second precursor solution, 2-methoxyethanol, which is a polar solvent, was used. Indium nitrate hydrate and zinc acetate dehydrate were used as precursor materials of the first precursor solution. A zirconium compound was used as a precursor material of the second precursor solution. Mono-ethanolamine and acetic acid (CH 3 COOH) were used as solution stabilizers. In the case of the first precursor solution, the ratio of indium, gallium, and zinc was fixed at 5: 1: 2 so that the concentration was 0.2 mole relative to the solvent, and each precursor material was added to the solvent 2-methoxyethanol. And mono-ethanolamine (Mono-ethanolamine) and acetic acid (CH 3 COOH) was mixed in an appropriate ratio to stabilize the sol. The hot plate temperature was 70 ° C. and stirred for 30 minutes at a speed of 300 rpm using a magnetic bar. The sufficiently stirred first precursor solution and second precursor solution were subjected to aging for stabilization for 24 hours. The specimen prepared by coating the prepared first precursor solution and the second precursor solution formed a SiO 2 buffer layer on the Eagle2000 glass, and prepared a substrate for growing MoW and SiO 2 on the gate electrode. Ultrasonic cleaning was performed for 20 minutes in order of acetone, methanol, and DI-water to remove organic substances and impurities that may form on the surface. Ultrasonic washing was performed in NaOH aqueous solution for 10 minutes for even deposition during thin film coating, and then washed several times with DI-water. The washed substrate was prepared by carrying out blurring with N 2 gas. The thin film coating was performed by spin-coating, and was performed in five steps of 500 rpm 10 seconds, 1500 rpm 10 seconds, 3000 rpm 10 seconds, 1500 rpm 10 seconds, and 500 rpm 10 seconds. First, the first precursor solution was coated on the substrate. The substrate coated with the first precursor solution was subjected to a first pre-heat treatment at a hot plate temperature of 300 ° C. for 5 minutes. Next, the second precursor solution was applied onto the first precursor solution, and the second precursor-heat treatment was performed under the same conditions. Then, the post-heat treatment was performed in the heat treatment equipment. After loading the sample into the equipment preheated according to the 500 ° C. temperature conditions, the upper and lower chambers were fastened through metal sealing. Finally, aluminum (Al) was deposited at 2000 kPa by sputtering the source-drain electrode.
[Example 2]
Example 2 relates to a method of preparing a first precursor solution and a second precursor solution using a solvent having a different polarity, coating a substrate to form an oxide thin film, and a method of manufacturing a thin film transistor using the same.
In Embodiment 2, the same content as in Embodiment 1 will be omitted to avoid duplication.
A sol-gel method was used to form an oxide thin film on a substrate. As a solvent of the first precursor solution, 2-methoxyethanol, a polar solvent, was used. Benzene, a nonpolar solvent, was used as the solvent of the second precursor solution. Indium nitrate hydrate and zinc acetate dehydrate were used as precursor materials of the first precursor solution. A zirconium compound was used as a precursor material of the second precursor solution.
In the present embodiment, the first pre-heat treatment step and the second pre-heat treatment step were omitted in comparison with Example 1 by preparing the first precursor solution and the second precursor solution using solvents having different polarities.
Meanwhile, the thin film transistor according to an exemplary embodiment of the present invention may be used in a liquid crystal display (LCD), a flexible display, a flexible solar cell, and the like, and it is found that the thin film transistor is applicable to various electronic devices using the thin film transistor.
As described above, an oxide thin film manufacturing method, a thin film transistor manufacturing method, and a thin film transistor using the same according to an embodiment of the present invention may simultaneously form a channel film and a gate insulating film through one post-heat treatment process. Therefore, the heat treatment process time can be shortened and the process cost can be reduced. Furthermore, the interface characteristics of the thin film transistor can be improved.
The scope of the present invention is not limited to the above-described embodiments, but may be embodied in various forms of embodiments within the scope of the appended claims. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the appended claims.
510: gate electrode
520: first precursor solution
530: second precursor solution
520 ': gate insulating layer
530 ': channel layer
540: source electrode
550: drain electrode
Claims (21)
Applying a second precursor solution on the substrate;
And heat treating the substrate to form an oxide semiconductor thin film from the first precursor solution and an oxide insulator thin film from the second precursor solution.
The first precursor solution and the second precursor solution is prepared using an oxide thin film, characterized in that using a solvent having a different polarity.
The solvent having different polarity includes a polar solvent and a nonpolar solvent,
The polar solvent includes at least one of acetic acid, ammonia, water, methanol, ethanol, 2-methoxyethanol, formamide,
The non-polar solvent is acetone, benzene, chloroform, dimethyl sulfoxide (dimethylsulfoxide), dioxane, dimethylformamide (dimethylformamide), tetrahydrofuran (tetrahydrofuran) manufacturing method of an oxide thin film characterized in that it comprises at least one.
The first precursor solution is ZrInZnO, HfInZnO, HfO 2 , TiO 2 , Using at least one of MgZnO and TiSrO 3 as a precursor material,
The second precursor solution is InGaZnO, ZnO, InZnO, AlInZnO, ZnO, InGaZnO 4 , ZnInO, ZnSnO, In 2 O 3 , Ga 2 O 3 , GaInZnO, SnO 2 , WO 3 , Ta 2 O 5 , In2O 3 SnO 2 , ZnSnO3, ZnSnO 4 , CdZnO, CuAlO 2 , CuGaO 2 and At least one material of Nb 2 O 5 as a precursor material, characterized in that for producing an oxide thin film.
The heat treatment is a method for producing an oxide thin film, characterized in that to remove the solution stabilizer or organic material to form an oxide thin film.
A first pre-baking step of heat-treating the substrate coated with the first precursor solution; And
A second pre-heat treatment step of heat-treating the substrate coated with the second precursor solution;
The method of claim 1, wherein the first precursor solution and the second precursor solution are prepared using an oxide thin film.
The solvent comprises a polar solvent and a nonpolar solvent,
The polar solvent includes at least one of acetic acid, ammonia, water, methanol, ethanol, 2-methoxyethanol, formamide,
The non-polar solvent is acetone, benzene, chloroform, dimethyl sulfoxide (dimethylsulfoxide), dioxane, dimethylformamide (dimethylformamide), tetrahydrofuran (tetrahydrofuran) manufacturing method of an oxide thin film characterized in that it comprises at least one.
The first pre-heat treatment step and the second pre-heat treatment step is characterized in that the oxide thin film manufacturing method is carried out at 150 ℃ to 300 ℃.
Applying a precursor solution having a nonpolar polarity to the substrate; And
Heat treating the substrate;
Oxide thin film manufacturing method comprising a.
The polar precursor solution is prepared using a polar solvent,
The polar solvent includes at least one of acetic acid, ammonia, water, methanol, ethanol, 2-methoxyethanol, and formamide.
The nonpolar precursor solution is prepared using a nonpolar solvent,
The non-polar solvent is acetone, benzene, chloroform, dimethyl sulfoxide (dimethylsulfoxide), dioxane, dimethylformamide (dimethylformamide), tetrahydrofuran (tetrahydrofuran) manufacturing method of an oxide thin film characterized in that it comprises at least one.
The precursor solution having the polarity is InGaZnO, ZnO, InZnO, AlInZnO, ZnO, InGaZnO 4 , ZnInO, ZnSnO, In 2 O 3 , Ga 2 O 3 , GaInZnO, SnO 2 , WO 3 , Ta 2 O 5 , In2O 3 SnO 2 , ZnSnO 3, ZnSnO 4 , CdZnO, CuAlO 2 , CuGaO 2 and Using at least one of Nb 2 O 5 as a precursor material,
The nonpolar precursor solution is ZrInZnO, HfInZnO, HfO 2 , TiO 2 , At least one material of MgZnO and TiSrO 3 is used as a precursor material.
The nonpolar precursor solution is InGaZnO, ZnO, InZnO, AlInZnO, ZnO, InGaZnO 4 , ZnInO, ZnSnO, In 2 O 3 , Ga 2 O 3 , GaInZnO, SnO 2 , WO 3 , Ta 2 O 5 , In2O 3 SnO 2 , ZnSnO 3, ZnSnO 4 , CdZnO, CuAlO 2 , CuGaO 2 and Using at least one of Nb 2 O 5 as a precursor material,
The precursor solution having the polarity is ZrInZnO, HfInZnO, HfO 2 , TiO 2 , At least one material of MgZnO and TiSrO 3 is used as a precursor material.
Applying a first precursor solution onto the substrate;
Applying a second precursor solution on the substrate;
Heat treating the substrate; And
Forming a source-drain electrode on the substrate;
And an oxide insulator thin film from the first precursor solution and an oxide semiconductor thin film from the second precursor solution.
The first precursor solution and the second precursor solution is a thin film transistor manufacturing method characterized in that using a solvent having a different polarity.
The solvent having different polarity includes a polar solvent and a nonpolar solvent,
The polar solvent includes at least one of acetic acid, ammonia, water, methanol, ethanol, 2-methoxyethanol, formamide,
The nonpolar solvent is a thin film transistor manufacturing method comprising at least one of acetone, benzene, chloroform, dimethyl sulfoxide (dimethylsulfoxide), dioxane, dimethylformamide, tetrahydrofuran (tetrahydrofuran).
The first precursor solution is ZrInZnO, HfInZnO, HfO 2 , TiO 2 , Using at least one of MgZnO and TiSrO 3 as a precursor material,
The second precursor solution is InGaZnO, ZnO, InZnO, AlInZnO, ZnO, InGaZnO 4 , ZnInO, ZnSnO, In 2 O 3 , Ga 2 O 3 , GaInZnO, SnO 2 , WO 3 , Ta 2 O 5 , In2O 3 SnO 2 , ZnSnO3, ZnSnO 4 , CdZnO, CuAlO 2 , CuGaO 2 and A method of manufacturing a thin film transistor, wherein at least one of Nb 2 O 5 is used as a precursor material.
A first pre-baking step of heat-treating the substrate coated with the first precursor solution; And
A second pre-heat treatment step of heat-treating the substrate coated with the second precursor solution;
Further comprising a thin film transistor, characterized in that the first precursor solution and the second precursor solution is prepared using a solvent of the same polarity.
The first pre-heat treatment step and the second pre-heat treatment step is a thin film transistor manufacturing method characterized in that carried out at 150 ℃ to 300 ℃.
Wherein the oxide semiconductor thin film forms a channel layer and the oxide insulator thin film forms a gate insulating layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110057252A KR20120138012A (en) | 2011-06-14 | 2011-06-14 | A method of forming oxide thin film, a making method of thin film transistor and a thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110057252A KR20120138012A (en) | 2011-06-14 | 2011-06-14 | A method of forming oxide thin film, a making method of thin film transistor and a thin film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20120138012A true KR20120138012A (en) | 2012-12-24 |
Family
ID=47904906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020110057252A KR20120138012A (en) | 2011-06-14 | 2011-06-14 | A method of forming oxide thin film, a making method of thin film transistor and a thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20120138012A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150108168A (en) * | 2014-03-17 | 2015-09-25 | 경희대학교 산학협력단 | P-pype amorphous oxide semiconductor comprising gallium, and method of manufacturing the same |
| US10797192B2 (en) | 2014-03-17 | 2020-10-06 | University-Industry Cooperation Group Of Kyung Hee University | P-type amorphous oxide semiconductor including gallium, method of manufacturing same, and solar cell including same and method of manufacturing said solar cell |
| CN113437165A (en) * | 2021-06-24 | 2021-09-24 | 中国科学技术大学 | Photoelectric detector and preparation method thereof |
-
2011
- 2011-06-14 KR KR1020110057252A patent/KR20120138012A/en active IP Right Grant
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150108168A (en) * | 2014-03-17 | 2015-09-25 | 경희대학교 산학협력단 | P-pype amorphous oxide semiconductor comprising gallium, and method of manufacturing the same |
| US10797192B2 (en) | 2014-03-17 | 2020-10-06 | University-Industry Cooperation Group Of Kyung Hee University | P-type amorphous oxide semiconductor including gallium, method of manufacturing same, and solar cell including same and method of manufacturing said solar cell |
| CN113437165A (en) * | 2021-06-24 | 2021-09-24 | 中国科学技术大学 | Photoelectric detector and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI501403B (en) | A thin film transistor structure, and a thin film transistor and a display device having the same | |
| US10615266B2 (en) | Thin-film transistor, manufacturing method thereof, and array substrate | |
| US20150357480A1 (en) | Stable metal-oxide thin film transistor and method of making | |
| KR101212626B1 (en) | Metal oxide thin film, preparation method thereof, and solution for the same | |
| US9362116B2 (en) | Methods of forming oxide thin film and electrical devices and thin film transistors using the methods | |
| WO2018010214A1 (en) | Method for manufacturing metal oxide thin film transistor array substrate | |
| CN103608906A (en) | Method for producing amorphous oxide thin film and thin film transistor | |
| US11843057B2 (en) | Oxide semiconductor transistor having dual gate structure and method of fabricating the same | |
| US9070597B2 (en) | Thin film transistor, display substrate and method of manufacturing a thin film transistor | |
| He et al. | Potential solution-induced HfAlO dielectrics and their applications in low-voltage-operating transistors and high-gain inverters | |
| Heo et al. | Suppression of interfacial disorders in solution-processed metal oxide thin-film transistors by Mg doping | |
| KR100987285B1 (en) | Manufacturing method of oxide semiconductor thin film and oxide thin film transistor | |
| KR101759495B1 (en) | Oxide Transistor and the controlling Method thereof | |
| KR20120138012A (en) | A method of forming oxide thin film, a making method of thin film transistor and a thin film transistor | |
| Xu et al. | Enhancing the performance of solution-processed thin-film transistors via laser scanning annealing | |
| Cho et al. | Electrical and chemical stability engineering of solution-processed indium zinc oxide thin film transistors via a synergistic approach of annealing duration and self-combustion process | |
| KR101876011B1 (en) | Oxide thin film transistor and method of manufacturing the same | |
| KR102082995B1 (en) | Solution composition for forming oxide semiconductor and oxide semiconductor and electronic device including the oxide semiconductor | |
| US20150064839A1 (en) | Method of forming tin oxide semiconductor thin film | |
| CN113539801A (en) | Metal oxide nitrogen doping method and metal oxide thin film transistor | |
| WO2009119968A1 (en) | Oxide semiconductor thin film and fabrication method thereof | |
| KR20120064970A (en) | Method of fabricating low temperature solution-processed oxide thin film and transistors comprising the same | |
| US9660099B2 (en) | Thin film transistor substrate and method of manufacturing the same | |
| KR102036972B1 (en) | Oxide thin film transistor and method of manufacturing the same | |
| KR101262325B1 (en) | A method of making oxide thin film and a method of making thin film transistor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration |