KR20120130935A - 박막 증착 장치 - Google Patents

박막 증착 장치 Download PDF

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Publication number
KR20120130935A
KR20120130935A KR1020110049012A KR20110049012A KR20120130935A KR 20120130935 A KR20120130935 A KR 20120130935A KR 1020110049012 A KR1020110049012 A KR 1020110049012A KR 20110049012 A KR20110049012 A KR 20110049012A KR 20120130935 A KR20120130935 A KR 20120130935A
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South Korea
Prior art keywords
semiconductor wafer
thin film
unit
deposition apparatus
film deposition
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KR1020110049012A
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English (en)
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한정남
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한정남
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Priority to KR1020110049012A priority Critical patent/KR20120130935A/ko
Publication of KR20120130935A publication Critical patent/KR20120130935A/ko

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

박막 증착 장치에 관한 것이다.
박막 증착 장치는, 입자의 극성을 감지하는 감지부; 상기 입자의 극성에 역으로 막대를 대전시키는 대전부; 상기 입자가 반도체 웨이퍼 표면에 노출된 상태에서 상기 반도체 웨이퍼 후면에 위치하는 상기 막대를 이송하는 이송부; 및 상기 반도체 웨이퍼의 너비만큼 상기 이송되는 막대의 대전 부위를 노출시키는 노출부를 포함한다.

Description

박막 증착 장치{THIN FILM DEPOSITION APPARATUS}
본 발명의 실시예들은 박막 증착 장치에 관한 것이다.
반도체 웨이퍼에 박막을 증착하는 장치가 널리 알려져 있다.
본 발명의 일실시예는 박막 증착 장치를 제공한다.
상기 목적을 이루기 위한, 박막 증착 장치는, 입자의 극성을 감지하는 감지부; 상기 입자의 극성에 역으로 막대를 대전시키는 대전부; 상기 입자가 반도체 웨이퍼 표면에 노출된 상태에서 상기 반도체 웨이퍼 후면에 위치하는 상기 막대를 이송하는 이송부; 및 상기 반도체 웨이퍼의 너비만큼 상기 이송되는 막대의 대전 부위를 노출시키는 노출부를 포함한다.
본 발명의 일실시예에 따르면, 반도체 웨이퍼에 박막을 얇게 증착할 수 있는 효과가 있다.
도 1은 본 발명의 일실시예에 따른 박막 증착 장치의 구성을 보인 블록도이다.
박막 증착 장치는 감지부, 대전부, 이송부, 노출부를 포함한다.
감지부는 입자의 극성을 감지한다. 입자는 플라즈마 상태로 놓여 있다. 입자의 극성에 대한 정보가 대전부에 주어진 경우 감지부는 동작하지 않는다.
대전부는 입자의 극성에 역으로 막대를 대전시킨다. 막대는 각진 부위를 구비한다.
이송부는 입자가 반도체 웨이퍼 표면에 노출된 상태에서 반도체 웨이퍼 후면에 위치하는 막대를 이송한다. 막대의 각진 부위가 반도체 웨이퍼 후면을 향한다. 막대의 이송 속도는 입자가 반도체 웨이퍼 표면에 증착되는 두께를 좌우한다.
노출부는 반도체 웨이퍼의 너비만큼 이송되는 막대의 대전 부위를 노출시켜 극성을 가진 입자가 반도체 웨이퍼 표면에 증착되도록 한다.
100 : 박막 증착 장치
110 : 감지부
120 : 대전부
130 : 이송부
140 : 노출부

Claims (1)

  1. 입자의 극성을 감지하는 감지부;
    상기 입자의 극성에 역으로 막대를 대전시키는 대전부;
    상기 입자가 반도체 웨이퍼 표면에 노출된 상태에서 상기 반도체 웨이퍼 후면에 위치하는 상기 막대를 이송하는 이송부; 및
    상기 반도체 웨이퍼의 너비만큼 상기 이송되는 막대의 대전 부위를 노출시키는 노출부
    를 포함하는, 박막 증착 장치.
KR1020110049012A 2011-05-24 2011-05-24 박막 증착 장치 KR20120130935A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020110049012A KR20120130935A (ko) 2011-05-24 2011-05-24 박막 증착 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110049012A KR20120130935A (ko) 2011-05-24 2011-05-24 박막 증착 장치

Publications (1)

Publication Number Publication Date
KR20120130935A true KR20120130935A (ko) 2012-12-04

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ID=47514904

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110049012A KR20120130935A (ko) 2011-05-24 2011-05-24 박막 증착 장치

Country Status (1)

Country Link
KR (1) KR20120130935A (ko)

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