KR20120111900A - Apparatus for enhancing the intensity of light source - Google Patents

Apparatus for enhancing the intensity of light source Download PDF

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Publication number
KR20120111900A
KR20120111900A KR1020110136576A KR20110136576A KR20120111900A KR 20120111900 A KR20120111900 A KR 20120111900A KR 1020110136576 A KR1020110136576 A KR 1020110136576A KR 20110136576 A KR20110136576 A KR 20110136576A KR 20120111900 A KR20120111900 A KR 20120111900A
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KR
South Korea
Prior art keywords
light source
metal
intensity
ultra
pulsed laser
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Application number
KR1020110136576A
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Korean (ko)
Inventor
표현봉
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한국전자통신연구원
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Priority to US13/436,750 priority Critical patent/US20120262930A1/en
Publication of KR20120111900A publication Critical patent/KR20120111900A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10007—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers
    • H01S3/10023—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers by functional association of additional optical elements, e.g. filters, gratings, reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
    • H01S3/136—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling devices placed within the cavity
    • H01S3/137—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling devices placed within the cavity for stabilising of frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers

Abstract

PURPOSE: An apparatus for increasing intensity of a light source is provided to locally generate surface plasmon polariton resonance using a metal nano structure. CONSTITUTION: An apparatus(10) for increasing intensity of a light source(100) locally increases an electric field of an incident light source using surface plasmon polariton resonance. The apparatus for increasing intensity of the light source comprises the light source, a dielectric substrate(110), and a metal nano structure(120) on the dielectric substrate. The dielectric substrate is made of a transparent dielectric which is able to transmit incident light. The metal nano structure is composed of pairs of metals. The pairs of metals are regularly arranged on the dielectric substrate. The metal nano structure can be made of either gold(Au), silver(Ag), platinum(Pt), palladium(Pd), copper(Cu), silicon(Si), germanium(Ge), aluminum(Al), or a their mixture. [Reference numerals] (100) Light source

Description

Apparatus for enhancing the intensity of light source}

The present invention relates to a light source intensity enhancing apparatus, and more particularly, to an apparatus for enhancing the intensity of a light source using a metal nanostructure.

Group IB precious metals such as gold (Au), silver (Ag) or copper (Cu) have Surface Plasmon Polariton Resonance characteristics in the ultraviolet, visible and near-infrared regions at the interface with the dielectric. In particular, nanostructures with three-dimensionally constrained Group IB noble metals have localized surface plasmon resonances that locally enhance the electric field according to their size and shape and the dielectric properties of the surrounding medium. surface plasmon resonance) phenomenon. Therefore, by optimizing the size or shape of the nanostructure according to the wavelength of the incident light source, it is possible to greatly increase the intensity of the electric field present on the surface and the periphery of the nanostructure. In other words, it acts like an antenna in the nearfield or farfield.

An object of the present invention is to provide an apparatus for locally enhancing the intensity of a light source using a metal nanostructure.

The problems to be solved by the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

In order to achieve the above object, the light source intensity enhancing apparatus according to an embodiment of the present invention includes a light source for outputting light having an extremely short pulse width, a dielectric substrate, and metal nanostructures formed on the dielectric substrate, Metal nanostructures can combine with light having an extremely short pulse width at the surface of a dielectric substrate to produce surface plasmon polariton resonance.

According to one embodiment, the light source is a pulsed laser, the pulsed laser may have a pulse width of 5fs to 50fs.

According to an embodiment, the light source may be a Ti-sapphire laser.

According to an embodiment, the light source may be a polychromatic light source or a monochromatic light source.

According to an embodiment, the light source may be a gas laser or a solid state laser diode (LD).

According to one embodiment, the light source may have a wavelength of 300nm to 3000nm ultraviolet light, visible light, near infra-red.

According to an embodiment, the light source is a monochromatic light source, and the monochromatic light source may be a continuous wave (CW) laser or a pulse wave laser.

According to one embodiment, the metal nanostructure may be in the form of a bowtie (bowtie) or rod-shaped dipole.

According to one embodiment, the metal nanostructure is a mirror symmetric metal pair, the metal pair may have a length of the long axis and the length of the short axis.

According to one embodiment, the metal nanostructure may be made of any one selected from Au, Al, Ag or Cu.

According to an embodiment, the light source intensity enhancing apparatus may generate an electron beam, a proton beam, or an ion beam.

In order to achieve the above object, a light source intensity enhancing apparatus according to another embodiment of the present invention is a light source for irradiating an ultra-short pulsed laser beam, and a target for outputting a proton beam by augmenting the intensity of the ultra-short pulsed laser beam Contains a structure. Here, the target structure is used as a propagation path of the target layer, the ultrashort pulsed laser beam or the proton beam, having a first surface to which the ultrashort pulsed laser beam is irradiated and a second surface from which the proton beam is emitted. A support having a membrane region, and metal nanostructures formed on a first side of the target layer, which combine with the ultra-short pulsed laser beam to produce surface plasmon polariton resonance.

Specific details of other embodiments are included in the detailed description and the drawings.

According to an embodiment of the present invention, the light source intensity enhancing apparatus may locally localize the intensity of the incident ultrashort light source by causing local surface plasmon polariton resonance using a metal nanostructure. That is, according to one embodiment, the intensity of the light source including the ultra-short and high-power laser can be locally increased without an external amplification device.

1 is a conceptual diagram of an apparatus for increasing the intensity of a light source according to an embodiment of the present invention.
2A to 2C are diagrams illustrating metal nanostructures of an apparatus for enhancing the intensity of a light source according to an embodiment of the present invention.
3A shows a near field image of electric field strength around a metal nanostructure in accordance with one embodiment of the present invention.
3B shows a near field image of electric field strength around a metal nanostructure in accordance with another embodiment of the present invention.
4 is a scanning electron microscope (SEM) photograph of a metal nanostructure according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and how to accomplish them, will become apparent by reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. As used herein, the terms 'comprises' and / or 'comprising' mean that the stated element, step, operation and / or element does not imply the presence of one or more other elements, steps, operations and / Or additions.

Hereinafter, a light source intensity enhancing apparatus according to embodiments of the present invention will be described in detail with reference to the drawings.

1 is a conceptual diagram of an apparatus for increasing the intensity of a light source according to an embodiment of the present invention. 2A and 2B are views illustrating metal nanostructures of an apparatus for increasing the intensity of a light source according to an embodiment of the present invention, and FIG. 2C is a cross-sectional view of the metal nanostructures of FIGS. 2A and 2B. It is a cross section cut along the II 'line | wire of 2b.

Referring to FIG. 1, the apparatus 10 for increasing the intensity of the light source 100 may locally enhance the electric field of the incident light source 100 using surface plasmon polariton resonance.

In detail, the apparatus for increasing the intensity of the light source 100 includes the light source 100, the dielectric substrate 110, and the metal nanostructure 120 on the dielectric substrate 110.

The dielectric substrate 110 may be made of a transparent dielectric through which incident light may pass. For example, a glass substrate such as silicon oxide (SiO 2 ) can be used. In addition, a dielectric substrate 110 of a transparent oxide such as titanium oxide (TiO 2 ), tantalum oxide (Ta 2 O 5 ), or aluminum oxide (Al 2 O 3 ) may be used as the dielectric substrate 110.

The metal nanostructure 120 may be metal pairs, and the metal pairs may be regularly arranged on the dielectric substrate 110. The metal nanostructure 120 is a mirror symmetric metal pair, and one metal pair may have a length of a long axis and a length of a short axis. The metal nanostructure 120 includes gold (Au), silver (Ag), platinum (Pt), palladium (Pd), copper (Cu), silicon (Si), germanium (Ge), aluminum (Al), or a mixture thereof. It can be formed as. In the surface of the dielectric substrate 110, the metal nanostructure 120 may combine with incident light 100a to generate surface plasmons. In this case, the size and shape of the metal nanostructures 120 and the inter-particle distances or lattice constants between the metal nanostructures 120 may be changed in resonance conditions. It can act as a parameter that has a big impact on.

According to an embodiment, the light source 100 incident on the metal nanostructure 120 may be an ultra-short light source 100a. For example, ultrashort pulse lasers may be used as the light source 100, and the ultrashort pulse lasers may have pulse widths of several to several tens of femto seconds (fs, 10-15 sec.). Can have

According to an embodiment, the light source 100 may be a polychromatic light source or a monochromatic light source. As the multicolor light source, a white light source such as a tungsten-halogen lamp (QTH-lamp) may be used. As a monochromatic light source, a gas laser, a solid state laser diode (LD), and an ultra-high power laser may be used. Furthermore, the monochromatic light source may be a continuous wave (CW) laser or a pulse wave laser. Here, the pulse width of the pulse wave laser may have an ultra-short pulse width of several to several tens of femto seconds (fs, 10-15 sec.). Pulsed lasers have high output power in the range of several terawatts (TW, terawatt: 10 12 watts) and several petawatts (PW, Petawatt: 10 15 watts) It can have For example, the pulsed laser can have an intensity of about 10 18 -10 22 W / cm 2 .

In one embodiment, a Ti-sapphire laser may be used as the light source 100, wherein the Ti-sapphire laser has a pulse width of about 5 fs (femto-sec.) To 50 fs, tera-watt and peta. It outputs peta-watt power. In addition, the light source 100 may be ultraviolet (NUV), visible light or near infra-red of about 300 nm to 3000 nm.

According to an embodiment, when the ultra-short light source 100a is incident on the dielectric substrate 110 on which the metal nanostructures 120 are formed, the electric field may be locally enhanced by surface plasmon polariton resonance characteristics. Specifically, in one embodiment, the ultra-short light source 100 having a short pulse width of about 5fs to 15fs may be used as the light source 100.

Specifically, the surface plasmon polariton resonance, in which light waves interact with free electrons on the metal surface and resonates when certain conditions are met at the boundary between the metal and the dielectric, has a femtosecond time characteristic. Accordingly, the light source 100a having the ultra short pulse width interacts with free electrons on the metal surface at the boundary between the metal nanostructure 120 and the dielectric substrate 110 to cause surface plasmon polariton resonance. When a resonance phenomenon occurs, light 100b having enhanced scattering and absorption efficiency in the near and far fields may be output through the metal nanostructure 120. By using the surface plasmon polariton resonance phenomenon, an electron, a proton, or a carbon ion beam can be generated from the dielectric substrate 110. That is, according to one embodiment, the intensity of the light source 100a including the ultra-short and high-power laser can be locally increased without an external amplification device.

According to one embodiment illustrated in FIG. 2A, the metal nanostructure 120a may be in the form of a bowtie. According to the embodiment illustrated in FIG. 2B, the metal nanostructure 120b may have a rod-shaped dipole shape.

2A to 2C, the metal nanostructures 120a and 120b may be formed of metal nanostructures to obtain maximum scattering and absorption efficiencies depending on the wavelength of the incident light 100a. The length a, the width b, the height d, the spacing e, the angle θ and the distance c between the metal pairs of the structures 120 are adjusted.

According to an embodiment, the length a of the metal nanostructures 120a and 120b may be about 100 nm to 200 nm, the width b may be about 50 nm to 100 nm, and the height d may be about 10 nm to 100 nm. Can be. An interval e between the symmetric metal nanostructures 120 may be about 50 nm to 100 nm. In addition, the angle θ of the bow tie-shaped metal nanostructure 120a may be about 30 degrees to about 60 degrees.

On the other hand, the metal nanostructure 120 is in the form of a spheroid having an oblate or elongated cross section, or a circular, oval, triangular, or rectangular shape. It may have a rhombus shape. The shape of the metal nanostructure 120 may be variously modified.

3A and 3B show near field images of electric field strength around metal nanostructures in accordance with embodiments of the present invention.

3A and 3B show bowtie shapes calculated using a finite-difference time-domain (FDTD) method with its shape, size, and dielectric properties as input parameters in order to optimize the structure of metal nanostructures. Numerical results of the distribution of the enhanced electric field strength around the metal dipole structures in the form of rod-shaped dipoles.

3A is a near field image of electric field strength around a bowtie-type metal nanostructure according to an embodiment of the present invention, and FIG. 3B is a near field image of electric field around a bar-shaped dipole metal nanostructure according to another embodiment. Indicates.

3A and 3B, when the laser having the ultra-short pulse width of femtosecond is irradiated onto the dielectric substrate on which the metal nanostructure is formed, it can be seen that the electric field strength of the light source is increased around the metal nanostructure.

4 is a scanning electron microscope (SEM) photograph of a metal nanostructure according to an embodiment of the present invention.

FIG. 4 is a scanning electron microscope (SEM) photograph of a bowtie gold (Au) metal nanostructure fabricated on a quartz substrate using an electron beam lithography method.

5 is a view showing a light source intensity enhancing apparatus including a metal nanostructure according to an embodiment of the present invention.

Referring to FIG. 5, the light source intensity enhancing apparatus may include a light source for irradiating light to the target structure and a target structure for outputting a charged particle beam.

The target structure may include the support 200, the target layer 230, and the metal nanostructure 220. The mask pattern may be formed on the upper surface 1 of the support 200, and the target layer 230 may be formed on the lower surface 2 of the support 200. Accordingly, the support 200 may be interposed between the target layer 230 and the mask pattern 205. In addition, an etch stop layer 240 may be further interposed between the support 200 and the target layer 230.

In one embodiment, the support 200 may be monocrystalline silicon. The support 200 may be at least one of silicon, sapphire, diamond, quartz, glass, ceramic materials, or metal materials, and the crystal structure may be single crystal, polycrystalline, amorphous, or the like. The support 200 may be formed to a thickness of several hundred micrometers to several millimeters.

The support 200 has a membrane region 210 penetrating it to expose the target layer 230. According to some embodiments, the membrane region 210 may have sidewalls that are inclined with respect to the top surface of the support 200. The membrane region 210 may be formed by forming a mask pattern 205 on the upper surface 1 of the support 200 and etching the support 200 using the mask pattern 205 as an etching mask. Here, the mask pattern 205 may be formed of a material having an etch selectivity with respect to the support 200. That is, the mask pattern 205 may include one of materials that may have etching resistance in an etching process of etching the support 200. For example, when the support 200 is silicon, the mask pattern 205 may include at least one of silicon oxide, silicon nitride, or organic polymer materials.

According to an embodiment, the target layer 230 may be formed to directly contact the support 200. In this case, the target layer 230 may be formed of at least one of materials having an etch selectivity with respect to the support 200. For example, the target layer 230 may be formed of a transparent dielectric material through which incident light may pass. For example, the target layer 230 may be formed of silicon oxide (SiO 2 ). Alternatively, the target layer 230 may be formed of platinum, gold, silver, aluminum, titanium, hydrogenated amorphous silicon, or the like.

In an embodiment, when the etch stop layer 240 is formed between the support 200 and the target layer 230, technical problems in which the target layer 230 is etched while forming the membrane region 210 may be prevented. Can be. Accordingly, the material for the target layer 230 can be freely selected without substantial limitations. For example, according to these embodiments, the target layer 230 may be formed of inert metal materials, aluminum, titanium, polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS), polyimide ( Polyimide), photoresist, or hydrogenated amorphous silicon.

In one embodiment, the metal nanostructure 220 described with reference to FIGS. 1 and 2A to 2C may be formed on one surface of the target layer 230. The metal nanostructure 220 may be metal pairs. For example, the metal nanostructure 220 may be a bow tie type or a rod-shaped dipole type. The metal nanostructure 220 may have a length (a), a width (b), a height (d) of each of the metal nanostructures 220, so as to obtain maximum scattering and absorption efficiency according to the wavelength of the incident light 100a. The spacing e, the angle θ and the distance c between the metal pairs are adjusted.

In the light source intensity enhancing apparatus according to the embodiment, the light source 100 irradiates the ultra-short pulse laser (100a) to the metal nanostructure 220, the surface plasmon polariton resonance phenomenon occurs by the metal nanostructure 200 Can be. For example, the ultrashort pulse laser 100a may have an intensity of about 10 18 to 10 22 W / cm 2 . The ultra-short pulse laser 100a is locally enhanced by the surface plasmon polariton resonance characteristic, so that a charged particle beam 100b such as a proton beam or an ion beam may be output. The charged particle beam 100b may be emitted from the target layer 230, and the charged particle beam 100b may be emitted through the membrane region 210 of the support 200.

As such, the light source intensity enhancing apparatus according to the embodiment of the present invention may be used in a medical device for treating tumors. That is, the charged particle beam output from the light source intensity enhancing apparatus may be irradiated to the human body.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art to which the present invention belongs may be embodied in other specific forms without changing the technical spirit or essential features of the present invention. You will understand that. It is therefore to be understood that the above-described embodiments are illustrative and not restrictive in every respect.

Claims (15)

A light source for outputting light having an extremely short pulse width;
Dielectric substrates; And
Including metal nanostructures formed on the dielectric substrate,
And the metal nanostructures combine with light having the ultra short pulse width at the surface of the dielectric substrate to generate surface plasmon polariton resonance. The method of claim 1,
The light source is a pulsed laser, the pulsed laser light source intensity enhancing apparatus having a pulse width of 5fs to 50fs. The method of claim 1,
The light source is a Ti-sapphire laser light source intensity enhancing apparatus. The method of claim 1,
The light source may be a polychromatic light source or a monochromatic light source. The method of claim 1,
The light source may be a gas laser or a solid state laser diode (LD). The method of claim 1,
The light source has a UV light intensity of 300nm ~ 3000nm, visible light (visible ray), a near infrared ray (near infra-red) wavelength light source intensity enhancement device. The method of claim 1,
The light source is a monochromatic light source, the monochromatic light source is a continuous wave (CW, continuous wave) laser or pulse wave (pulse wave) laser. The method of claim 1,
The metal nanostructures have a bow tie type or a rod-type dipole type. The method of claim 1,
The metal nanostructure is a mirror-symmetrical metal pair, and the metal pair has a length of long axis and a length of short axis of light source intensity enhancing apparatus. The method of claim 1,
The metal nanostructure is a light source intensity enhancement device made of any one selected from Au, Al, Ag or Cu. The method of claim 1,
And the light source intensity enhancing apparatus generates an electron beam, a proton beam, or a carbon ion beam. A light source for irradiating an ultra-short pulsed laser beam; And
It includes a target structure for outputting a proton beam by increasing the intensity of the ultra-short pulsed laser beam,
The target structure,
A target layer having a first surface to which the ultra-short pulsed laser beam is irradiated and a second surface to which the proton beam is emitted;
A support having a membrane region used as a propagation path of the ultra-short pulsed laser beam or the proton beam; And
And a metal nanostructure formed on the first surface of the target layer and coupled to the ultra-short pulsed laser beam to generate surface plasmon polariton resonance. 13. The method of claim 12,
And the support comprises at least one of silicon, sapphire, diamond, quartz, glass, ceramic materials or metal materials. 13. The method of claim 12,
Width of the membrane region increases as the distance from the target layer increases. 13. The method of claim 12,
The ultrashort pulsed laser beam has a pulse width of 5fs to 50fs.
KR1020110136576A 2011-04-01 2011-12-16 Apparatus for enhancing the intensity of light source KR20120111900A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
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KR20170114225A (en) * 2016-04-04 2017-10-13 스페클립스 주식회사 Device for enhancing the optical signal in laser system
US11079279B2 (en) 2019-03-22 2021-08-03 Speclipse, Inc. Diagnosis method using laser induced breakdown spectroscopy and diagnosis device performing the same
KR20230169842A (en) * 2022-06-09 2023-12-18 상하이 촨신 세미컨덕터 컴퍼니 리미티드 Exposure light enhancement device, photomask and manufacturing method thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170114225A (en) * 2016-04-04 2017-10-13 스페클립스 주식회사 Device for enhancing the optical signal in laser system
US11079279B2 (en) 2019-03-22 2021-08-03 Speclipse, Inc. Diagnosis method using laser induced breakdown spectroscopy and diagnosis device performing the same
US11326949B2 (en) 2019-03-22 2022-05-10 Speclipse, Inc. Diagnosis method using laser induced breakdown spectroscopy and diagnosis device performing the same
US11422033B2 (en) 2019-03-22 2022-08-23 Speclipse, Inc. Diagnosis method using laser induced breakdown spectroscopy and diagnosis device performing the same
US11892353B2 (en) 2019-03-22 2024-02-06 Speclipse, Inc. Diagnosis method using laser induced breakdown spectroscopy and diagnosis device performing the same
KR20230169842A (en) * 2022-06-09 2023-12-18 상하이 촨신 세미컨덕터 컴퍼니 리미티드 Exposure light enhancement device, photomask and manufacturing method thereof

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