KR20120081772A - Apparatus and method for gas supplying and substrate processing apparatus having the same - Google Patents

Abstract

PURPOSE: A gas supply device, a gas supply method, and a substrate processing apparatus including the same are provided to prevent the generation of particles from a gas spray means by not rotating a plurality of gas spray units. CONSTITUTION: A gas supply device comprises a plurality of gas spray units(331-338) and a gas supply unit. The gas supply unit supplies process gas including source gas, purge gas, and reaction gas to the plurality of gas spray units. The plurality of gas spray units is fixed within a chamber. The plurality of gas spray units supplies one process gas to one gas spray means and supplies same process gas to other gas spray means which is contiguous to the one gas spray means. A plurality of gas control units is respectively placed between a plurality of gas spray means and a plurality of gas supply pipes.

Description

Gas supply apparatus, gas supply method and substrate processing apparatus having the same {Apparatus and method for gas supplying and substrate processing apparatus having the same}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas supply apparatus, and more particularly, to a gas supply apparatus, a gas supply method, and a substrate processing apparatus having the same, wherein a plurality of gas ejection means are provided radially inside a chamber.

In general, in order to manufacture a memory device, a display device, a light emitting device, a plurality of patterns or structures are formed by repeating thin film deposition, photography, etching, and cleaning processes on a silicon wafer or a glass substrate. Among them, there are various methods for thin film deposition, but in recent years, fine patterns can be formed very uniformly, and atomic layer deposition (ALD) method with excellent step coverage is excellent. The use of is increasing. The ALD method is a process of forming a predetermined thin film by reacting a raw material and a reactant on the surface of a substrate by repeating one cycle of supply and purge of a raw material, supply of a reactant, and purge in the chamber in which the substrate is placed. This ALD method can precisely control the thickness of the thin film by controlling the supply time of the process material.

Meanwhile, in order to improve the productivity of the ALD method, a semi batch process chamber is used that processes several wafers at once. In addition, a plurality of gas injection means are installed in the chamber, and the source gas, purge gas, reactive gas, and purge gas are sequentially sprayed on the wafer while rotating the plurality of gas injection means in one direction, and the thin film is deposited on the wafer by the ALD method. Will be deposited. In addition, chemical vapor deposition (CVD) becomes possible by injecting the same gas from a plurality of gas injection means.

One of the advantages of the rotary jetting device is that the ALD process effect can be obtained during the CVD process. However, when the plurality of gas injection means rotates inside the chamber, particles may be generated from the rotating portion, whereby the plurality of gas injection means may act as particle sources. In addition, the source gas, the reaction gas and the purge gas are respectively supplied to the plurality of gas injection means, and the structure of the device for isolating the supply paths of these gases is complicated and expensive.

The present invention provides a gas supply apparatus and a substrate processing apparatus having the same, which can maintain the advantages and solve the disadvantages of the rotary jetting apparatus.

The present invention provides a gas supply apparatus and a substrate processing apparatus having the same, which can achieve almost the same effect as a rotary injection apparatus without rotating a plurality of gas injection means installed in the chamber.

The present invention provides a gas supply apparatus for radially installing a plurality of gas ejection means in a chamber, and sequentially supplying the same process gas from one gas ejection means to other gas ejection means adjacent in one direction, and a substrate processing apparatus having the same. To provide.

Gas supply apparatus according to an embodiment of the present invention comprises a plurality of gas injection means arranged radially; And a gas supply unit supplying each of the gas injection means to a process gas including a source gas, a purge gas, and a reactant gas, wherein the plurality of gas injection means are fixed in a chamber and receive one process gas from one gas injection means. After the supply, the same process gas is sequentially supplied to other gas injection means adjacent to the one gas injection means in one direction.

At least four gas injection means are provided.

The plurality of gas injection means are supplied with source gas and reaction gas from two gas injection means which are not adjacent to each other, and purge gas is supplied from at least two gas injection means positioned between them.

The plurality of gas injection means are supplied with a source gas and a reactant gas from two gas injection means opposed to each other, and a purge gas is supplied from at least two gas injection means positioned between and opposed to each other.

The two gas injection means supplying the source gas and the reactive gas supply the purge gas without supplying the purge gas or the process gas while the two gas injection means supplying the source gas and the reactant gas. The two gas injection means do not supply the source gas or the reactant gas or the process gas while the two gas injection means adjacent thereto supply the purge gas.

And a plurality of gas control units provided between the plurality of gas injection means and each of the gas supply units supplying the source gas, the purge gas, and the reactive gas, respectively, and through the gas injection means under control of the gas control unit. The supply of the process gas is controlled.

According to another embodiment of the present invention, a gas supply device includes: a plurality of gas injection means disposed radially; A plurality of gas supply units respectively supplying process gases including a source gas, a purge gas, and a reactive gas to each of the gas injection means; And a plurality of gas control units provided between each of the plurality of gas injection means and the plurality of gas supply pipes, wherein the plurality of gas injection means is fixed in the chamber, and the plurality of gas injection means is controlled by the gas control unit. One gas injection means sequentially supplies the source gas, purge gas, and reactive gas, and another gas injection means adjacent to the one gas injection means in one direction and another direction is different from the process gas supplied from the one gas injection means. Supply process gas.

The plurality of gas injection means are supplied with source gas and reaction gas from two gas injection means which are not adjacent to each other, and purge gas is supplied from at least two gas injection means positioned between them.

The plurality of gas injection means are supplied with a source gas and a reactant gas from two gas injection means opposed to each other, and a purge gas is supplied from at least two gas injection means positioned between and opposed to each other.

According to still another aspect of the present invention, there is provided a gas supply method comprising: a plurality of gas injection means radially disposed and fixed in a chamber; And a gas supply unit for supplying a process gas including a source gas, a purge gas, and a reactant gas to each of the gas ejection means, and supplying the process gas from one gas ejection means to the same process. The gas is sequentially supplied to the other gas injection means adjacent to the one gas injection means in one direction.

The plurality of gas injection means may be supplied with a source gas and a reactant gas from two gas injection means facing each other, and at the same time a purge gas is supplied from at least two gas injection means positioned between them and opposed to each other. The purge gas is supplied from the two gas injection means which supplied the gas, and the source gas and the reaction gas are supplied from the two gas injection means which supplied the purge gas.

According to still another aspect of the present invention, there is provided a gas supply method comprising: a plurality of gas injection means radially disposed and fixed in a chamber; A plurality of gas supply units respectively supplying process gases including a source gas, a purge gas, and a reactive gas to each of the gas injection means; And a plurality of gas controllers provided between each of the plurality of gas injection means and a plurality of gas supply pipes, wherein one gas injection means of the plurality of gas injection means is controlled according to the control of the gas control unit. The source gas, the purge gas, and the reactive gas are sequentially supplied, and the other gas injection means adjacent to the one gas injection means in one direction and the other direction supplies the process gas different from the process gas supplied from the one gas injection means.

Substrate processing apparatus according to another embodiment of the present invention comprises a chamber for providing a reaction space; A substrate setter provided under the chamber; And a gas supply device for supplying a process gas onto the substrate settled in the substrate mounting portion, the gas supply device comprising: a plurality of gas injection means disposed radially; And a gas supply unit for supplying each of the gas injection means to a process gas including a source gas, a purge gas, and a reactive gas, wherein the plurality of gas injection means are fixed to an upper side of the chamber, After supplying one process gas, the same process gas is sequentially supplied to another gas injection means adjacent to the one gas injection means in one direction.

The substrate mounting portion rotates in another direction opposite to the one direction.

Substrate processing apparatus according to another embodiment of the present invention comprises a chamber for providing a reaction space; First and third gas injection means provided in positions opposite to each other on the inside of the chamber; Second and fourth gas injection means positioned between the first and third gas injection means so as to face each other in a 30 ° to 90 ° direction; A gas supply device for supplying a supply gas to the plurality of gas injection means, supplying a source gas or a reactive gas to the first and third gas injection means, and purge gas to the second and fourth gas injection means. To supply.

After supplying a source gas or a reaction gas to the first and third gas injection means, a source gas or a reaction gas is supplied to the second and fourth gas injection means after a few seconds.

After the raw material purge gas is supplied to the second and fourth gas injection means, a purge gas is supplied to the first and third gas injection means after a few seconds.

Substrate processing apparatus according to another embodiment of the present invention comprises a chamber for providing a reaction space; First and third gas injection means provided in positions opposite to each other on the inside of the chamber; And second and fourth gas injection means positioned opposite to each other in the 30 ° to 90 ° direction between the first and third gas injection means, wherein the first to fourth gas injection means comprise a source gas and a purge gas. And injection ports for injecting reactive gases, respectively, to sequentially spray the plurality of gases.

According to the present invention, a plurality of gas injection means are arranged radially inside the chamber, a source gas, a purge gas, and a reactive gas are supplied to each of the plurality of gas injection means, and the supply of these process gases is controlled by a valve. Therefore, the process gas is not mixed and supplied to each of the plurality of gas injecting means, and the plurality of gas injecting means injects the one process gas from the one gas injecting means, and then sequentially moves to the adjacent gas injecting means in the counterclockwise direction, for example. It is possible to inject one process gas.

According to the present invention, by controlling the valve to sequentially inject the source gas, the reaction gas and the purge gas from the adjacent gas injection means to one side, the same effect as supplying the process gas while rotating the plurality of gas injection means without rotating Can be represented.

Further, since the plurality of gas injection means do not rotate, generation of particles from the gas injection means can be prevented.

In addition, since expensive equipment such as magnetic seals and complicated equipment such as a rotating body having the same are not required, production cost can be reduced and the equipment configuration can be simplified.

1 is a schematic cross-sectional view of a substrate processing apparatus including a gas supply device according to an embodiment of the present invention.
2 is a schematic top view of a gas supply apparatus according to an embodiment of the present invention.
3 is a schematic view illustrating a substrate processing method using a gas supply device according to an embodiment of the present invention.
4 (a) to 4 (h) are a plan view of the gas injection means shown in sequence to explain a substrate processing method using a gas supply apparatus according to an embodiment of the present invention.
5 (a) to 5 (d) are a plan view of the gas injection means shown in sequence to explain a substrate processing method using a gas supply apparatus according to another embodiment of the present invention.
6 (a) to 6 (f) are plan views of gas ejection means sequentially shown for explaining a substrate processing method using a gas supply device according to another embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention in more detail. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention and to those skilled in the art to fully understand the scope of the invention. It is provided to inform you. Wherein like reference numerals refer to like elements throughout.

1 is a conceptual cross-sectional view of a substrate processing apparatus according to an embodiment of the present disclosure, and FIG. 2 is a plan view of a gas supply apparatus according to an embodiment of the present disclosure.

1 and 2, a substrate processing apparatus according to an embodiment of the present invention includes a chamber 100 having a reaction space and a substrate inside the substrate 10 positioned in the reaction space of the chamber 100. Tooth 200 and a gas supply device 300 for supplying a plurality of process gases to the reaction space of the chamber 100. In addition, the gas supply device 300 includes a gas storage unit 310, a gas supply unit 320, a plurality of gas injection means 330 and the gas control unit 340. The controller further includes a controller (not shown) for controlling the gas controller 340 to control the supply of the reactive gas.

The chamber 100 includes a chamber body 110 having an inner space and a chamber lid 120 detachably coupled to the chamber body 110 to seal the reaction space. The chamber body 110 is manufactured in a cylindrical shape with an open top, and the chamber lid 120 is manufactured in a plate shape that shields the upper part of the chamber body 110. Here, although not shown, a separate sealing member such as an O-ring or a gasket may be provided on the coupling surface of the chamber body 110 and the chamber lid 120. In addition, a separate fixing member for coupling and fixing the chamber body 110 and the chamber lid 120 may be further provided. In addition, one side of the chamber body 110 is provided with an entrance and exit through which the substrate 10 enters, and at least one exhaust port 130 is provided in at least one region of the chamber body 110. The exhaust port 130 may be connected to an exhaust device (not shown) to adjust the pressure inside the chamber 100 by the exhaust device and exhaust the unreacted process gas. Of course, the present invention is not limited thereto, and the chamber 100 having various structures may be used. For example, a single body chamber can be used.

The substrate mounting unit 200 may include a substrate mounting plate 210 for housing at least one substrate 10, a mounting plate driver 230 for elevating the substrate mounting plate 210, a mounting plate driver 230, and a substrate. It is provided with a connecting shaft 220 for connecting the base plate (210). In addition, a plurality of lift pins (not shown) may be further provided for loading and unloading the substrate 10. The substrate mounting plate 210 is manufactured in a plate shape so that at least one substrate 10 is placed thereon. For example, when four substrates 10 are placed on the substrate mounting plate 210, a thin film may be deposited on the four substrates 10 by performing one deposition process. In this case, the number of substrates 10 placed on the substrate mounting plate 210 may be adjusted according to the size of the substrate mounting plate 210 and the size of the substrate 10. In addition, the substrate 10 is effectively disposed in a radial form with respect to the center of the substrate mounting plate 210. That is, the distances between the center of the substrate mounting plate 210 and the center of the plurality of substrates 10 are equally arranged with each other. Therefore, a space in which the substrate 10 is not placed is provided at the center of the substrate mounting plate 210. In addition, a temperature regulating means (not shown) may be provided to heat the substrate 10 inside the substrate mounting plate 210 to adjust the substrate 10 to a process temperature. Of course, the temperature control means may be located on the surface as well as the inside of the substrate mounting plate 210, may be located outside the substrate mounting plate 210. The substrate mounting plate 210 is raised, lowered, and rotated by the mounting plate driver 230. Through this, the process position of the substrate 10 may be set, and the loading and unloading of the substrate 10 may be easily performed. In this case, a stage including a motor may be used as the mounting plate driver 230. And, the base plate driver 230 is effectively provided on the outside of the chamber 100. Through this, particles generated by the movement of the base plate driver 230 may be prevented. Here, the driving force (raising and lowering force and rotational force) of the base plate driving unit 230 is transmitted to the substrate base plate 210 by the connecting shaft 220. The connecting shaft 220 penetrates the bottom surface of the chamber 100 and is connected to the substrate mounting plate 210. In this case, a sealing means (for example, a bellows) 240 for sealing the chamber 100 may be provided in the through hole region of the chamber 100 through which the connecting shaft 220 passes.

The gas supply device 300 includes a gas storage unit 310, a gas supply unit 320, and a plurality of gas injection means 330. The gas storage unit 310 stores the source gas, the reaction gas, and the purge gas, and includes, for example, the source gas storage unit 312, the purge gas storage unit 314, and the reaction gas storage unit 316. The source gas storage 312 and the reaction gas storage 316 may store various materials according to the type of film to be deposited on the substrate 10. For example, when depositing a ZnO film on the substrate 10, the raw material gas storage 312 may store Zn raw materials, for example, Zn (C ₂ H ₅ ) ₂ (diethylzinc; DEZ), and store the reaction gas. The unit 316 may include an oxidizing gas, for example, oxygen (O ₂ ), ozone (O ₃ ), H ₂ O, or the like. Meanwhile, the source gas storage unit 312 and the reactive gas storage unit 316 may store and vaporize the material in a liquid state, and for this purpose, the source gas storage unit 312 and the reactive gas storage unit 316 may be provided. Carburetor may be included. In addition, the purge gas storage unit 314 is for purging the unreacted raw material gas and the reactive gas remaining in the chamber 100 in the ALD process, for example, may store an inert gas such as nitrogen.

The gas supply unit 320 is provided between the gas storage unit 310 and the plurality of gas injecting means 330 to connect them to supply the process gas of the gas storage unit 310 to the plurality of gas injecting means 330. . The gas supply unit 320 includes a source gas supply pipe 321, a purge gas supply pipe 322, a reaction gas supply pipe 323, and a plurality of gas injection means connecting pipes 324. That is, the source gas supply pipe 321, the purge gas supply pipe 322, and the reaction gas supply pipe 323 are respectively connected to the source gas storage 312, the purge gas storage 314, and the reaction gas storage 316, respectively. do. In addition, the plurality of gas injection means connecting pipes 324 are provided between the plurality of gas injection means 330, the source gas supply pipe 321, the purge gas supply pipe 322, and the reactive gas supply pipe 323. That is, each of the plurality of gas injection means 330 is connected to at least one connecting pipe 324, each of the connecting pipe 324 is a source gas supply pipe 321, purge gas supply pipe 322 and the reaction gas supply pipe, respectively 323 is connected. In this case, a plurality of gas controllers 340 are provided between each of the plurality of gas injection means connecting pipes 324, the source gas supply pipe 321, the purge gas supply pipe 322, and the reactive gas supply pipe 323. The gas control unit 340 includes a valve and controls the flow of process gas supplied from the gas storage unit 310 to the plurality of gas injection means 330. That is, at least three gas control units 340, such as valves, are provided for each gas injector connecting tube 324 so that the process gas supplied to the gas injecting means 330 through the gas injecting means connecting tube 324 is not mixed. To control the flow of the source gas, purge gas and reaction gas. In addition, the gas control unit 340 may be a plurality of gas injection means 330 to sequentially spray the process gas from one gas injection means 330 to the adjacent gas injection means 330 in one direction, for example counterclockwise direction. To help.

A plurality of gas injection means (331 to 338; 330) is located inside the chamber 100, and is located above the chamber 100 facing the substrate mounting plate 210. The plurality of gas injection means 330 may be provided in the chamber lid 120 or may be provided under the chamber lid 120. The plurality of gas injection means 330 receives the source gas, the purge gas and the reaction gas from the gas storage unit 310 through the gas supply unit 320 and injects the lower substrate 10 into the lower substrate 10. Accordingly, the plurality of gas injection means 330 is provided with a plurality of injection holes 339 below. As illustrated in FIG. 2, the injection holes 339 may be provided with a plurality of injection holes 339, and raw material gas, purge gas, and reaction gas may be sequentially injected through the plurality of injection holes 339. In addition, the injection hole 339 is divided into a source gas injection port 339a, a reaction gas injection port 339b, and a purge gas injection port 339c for each gas injection means 330, and through each injection hole 339a, 339b, 339c, , Reaction gas and purge gas may be injected. The plurality of gas injection means 330 extends outward from the center of the chamber 100 and is disposed radially. That is, the plurality of gas injection means 330 extends from an area corresponding to the center portion of the substrate mounting plate 210 in which the plurality of substrates 10 are not placed to an area corresponding to the outside of the substrate mounting plate 210. do. At least four gas injection means 330 may be provided. For example, eight gas injection means 330 may be provided as illustrated in FIG. The plurality of gas injection means 330 according to the present invention is a gas injection adjacent to one direction, for example counterclockwise from the one gas injection means 330 by the on / off control of the gas control unit 340 The source gas, purge gas, and reaction gas are sequentially injected into the means 330. For example, the source gas is sequentially supplied from the first gas injector 331 to the eighth gas injector 338 in a counterclockwise direction, that is, in the order of the second gas injector 332 and the third gas injector 333. Spray. At the same time, the fifth gas injector 335 provided at a position opposite to the first gas injector 331 is disposed in the counterclockwise direction, that is, the sixth gas injector 336 and the seventh gas injector 337. The reaction gas is sequentially injected to the four gas injection means 334. At the same time, the fourth and eighth gas injectors 334 and 338 counterclockwise from the third and seventh gas injectors 333 and 337 provided between the first and fifth gas injectors 331 and 335. ), The fifth and the first gas injection means (335, 331) in order to inject the purge gas to the second and sixth gas injection means (332, 336) in sequence. Therefore, the plurality of gas injection means 330 injects the source gas and the reaction gas from the two gas injection means 330 facing each other according to the on / off control of the gas control unit 340, and injects the source gas and the reaction gas Located between the gas injection means 330 to inject the purge gas from the two gas injection means 330 facing each other. The gas injection of the symmetric gas injection means 330 is sequentially performed through the other gas injection means 330 adjacent and symmetric in one direction. Meanwhile, the one gas injecting means 330 injecting the process gas does not inject the process gas or supplies the purge gas while the adjacent gas injecting means 330 injects the previously injected process gas. Thus, by sequentially injecting the source gas, the reaction gas and the purge gas from the adjacent gas injecting means 330, the plurality of gas injecting means 330 rotates to have the same effect as supplying the process gas. In this case, the substrate mounting plate 210 on which the substrate 10 is placed may rotate in a direction opposite to the direction of the gas injection means 330 that circulates and injects the process gas, for example, in a clockwise direction.

As described above, in the gas supply apparatus according to the exemplary embodiment, a plurality of gas injection means 330 is radially disposed in the chamber 100, and source gas and purge are disposed in each of the plurality of gas injection means 330. The gas and the reactive gas are supplied, and the supply of these process gases is controlled using the gas controller 340 so that the process gases are not mixed and supplied to each of the plurality of gas injection means 330. Then, the gas control unit 340 is adjusted so that the plurality of gas injecting means 330 injects one process gas from the one gas injecting means 330 and then sequentially moves to the adjacent gas injecting means 330 in the counterclockwise direction, for example. To inject one process gas. The gas control unit 340 is adjusted to sequentially spray source gas, reactive gas, and purge gas from adjacent gas injection means 330 to one side, so that the plurality of gas injection means 330 rotates to supply process gas. Can be effective.

In addition, the gas control unit 340 is adjusted to simultaneously supply the process gas A and the reaction gas B from the gas supply unit 320 to the entire plurality of gas injection means 330, and do not supply the purge gas C. Otherwise, the CVD process may be performed using the plurality of gas injection means 330.

Referring to the gas supply method using the gas supply device according to the present invention in more detail as follows.

3 is a schematic view illustrating a gas supply method using a gas supply device according to an embodiment of the present invention, Figure 4 (a) to Figure 4 (h) is a gas using a gas supply device according to an embodiment of the present invention It is a top view of the gas injection means shown sequentially in order to demonstrate a supply method.

As shown in FIG. 3 and FIG. 4A, the fifth gas provided at a position facing the first gas injection means 331 to supply the source gas A from the first gas injection means 331. The reaction gas B is injected through the injection means 335. At the same time, the purge gas C is injected through the third and seventh gas injection means 333 and 337 provided between the first and fifth gas injection means 331 and 335 at an angle of 90 ° to each other. do. At this time, the process gas is not supplied to the second, fourth, sixth and eighth gas injection means 332, 334, 336, and 338. However, it is also possible to cause the purge gas to be injected through the second, fourth, sixth and eighth gas injection means 332, 334, 336, 338. The injection of the process gas through the plurality of gas injection means 330 may be controlled through on / off control of the gas controller 340, for example, a valve. That is, the gas control unit 340 connected to the source gas supply pipe 321 is turned on among the plurality of gas control units 340 connected to the first gas injection unit 331, and the reaction gas supply pipe 322 and the purge gas supply pipe 323 are turned on. The gas control unit 340 connected to the main unit is turned off so that the source gas A is supplied through the first gas injection unit 331. In addition, the gas control unit 340 connected to the reaction gas supply pipe 322 is turned on among the plurality of gas control units 340 connected to the fifth gas injection unit 335, and the source gas supply pipe 321 and the purge gas supply pipe 323 are turned on. The gas control unit 340 connected to the control unit is turned off so that the reaction gas B is supplied through the fifth gas injection unit 335. The gas controller 340 connected to the purge gas supply pipe 323 is turned on among the plurality of gas controllers 340 connected to the third and seventh gas injection means 333 and 337, and the source gas supply pipe 321 and the reaction are turned on. The gas control unit 340 connected to the gas supply pipe 322 is turned off so that the purge gas C is supplied through the third and seventh gas injection means 333 and 337. All gas control units 340 connected to the second, fourth, sixth and eighth gas injection means 332, 334, 336, and 338 are turned off so that no process gas is supplied.

As shown in FIG. 3 and FIG. 4B, the gas control unit 340 is controlled to supply the process gas to the first, third, fifth and seventh gas injection means 331, 333, 335, and 337. And reacting the source gas A with the first and fifth gas injection means 331, 335 from the second and sixth gas injection means 332, 336 adjacent in one direction, for example counterclockwise. Gas B is to be injected respectively. At the same time, the purge gas C is injected through the fourth and eighth gas injection means 334 and 338 positioned between the second and sixth gas injection means 332 and 336. Here, the purge gas B may be injected from the first, third, fifth and seventh gas injection means 331, 333, 335, 337.

As shown in FIG. 3 and FIG. 4C, the gas control unit 340 is controlled to supply process gas to the second, fourth, sixth, and eighth gas injection means 332, 334, 336, and 338. And the source gas A and the reactive gas B are discharged from the third and seventh gas injection means 333 and 337 adjacent to the second and sixth gas injection means 332 and 336 in the counterclockwise direction, respectively. Let each be sprayed. At the same time, the purge gas C is injected through the first and fifth gas injection means 331 and 335 positioned between the third and seventh gas injection means 333 and 337. The purge gas C is injected through the first and fifth gas injection means 331 and 335 so that the raw material gas previously sprayed onto the substrate 10 through the first and fifth gas injection means 331 and 335. In (A) and the reaction gas (B), the source gas (A) and the reaction gas (B) which are not adsorbed or reacted on the substrate 10 are purged. Meanwhile, the purge gas B may be injected through the second, fourth, sixth, and eighth gas injection means 332, 334, 336, and 338.

As shown in FIGS. 3 and 4 (d), the gas control unit 340 is controlled to supply process gas to the first, third, fifth and seventh gas injection means 331, 333, 335, and 337. From the fourth and eighth gas injecting means 334 and 338 adjacent to the third and seventh gas injecting means 333 and 337 in the counterclockwise direction, respectively. To be supplied. At the same time, the purge gas C is supplied through the second and sixth gas injection means 332 and 336 positioned between the fourth and eighth gas injection means 334 and 338. The purge gas C is injected through the second and sixth gas injection means 332 and 336 so that the raw material gas previously injected onto the substrate 10 through the second and sixth gas injection means 332 and 336. In (A) and the reaction gas (B), the source gas (A) and the reaction gas (B) which are not adsorbed or reacted on the substrate 10 are purged. Meanwhile, the purge gas C may be injected through the first, third, fifth, and seventh gas injection means 331, 333, 335, and 337.

As shown in FIG. 3 and FIG. 4E, the gas control unit 340 is controlled to supply process gas from the second, fourth, sixth, and eighth gas injection means 332, 334, 336, and 338. And the source gas A and the reactant gas B are respectively discharged from the fifth and first gas injection means 335 and 331 adjacent to the fourth and eighth gas injection means 334 and 338 in the counterclockwise direction, respectively. To be sprayed. At the same time, the purge gas C is injected through the third and seventh gas injection means 333 and 337 positioned between the first and fifth gas injection means 331 and 335. By reacting the reaction gas B from the first gas injection means 331, the source gas A and the reaction gas B previously injected from the first gas injection means 331 and adsorbed onto the substrate 10 are separated. React and the atomic layer is deposited. In addition, the source gas A is injected through the fifth gas injection means 335 to adsorb the source gas A onto the atomic layer of the substrate 10.

Subsequently, as illustrated in FIGS. 3 and 4 (f) to 4 (h), the gas control unit 340 is controlled to inject and stop the source gas A through the plurality of gas injection means 330, and purge gas. (C) spraying and stopping, reactive gas (B) spraying and stopping, and purge gas (C) spraying and stopping are carried out in a cycle so that the atomic layer is repeatedly stacked on the substrate 10 a plurality of times to form a thin film having a predetermined thickness. Can be.

5 (a) to 5 (d) are plan views of gas injection means sequentially shown to explain a gas supply method using a gas supply device according to another embodiment of the present invention, four gas injection means in the chamber This installed gas supply apparatus will be described.

As shown in Fig. 5 (a), the first and third gas injection means 331 and 333 are disposed to face each other, and the second and fourth gas injection means 332 at an angle of, for example, 90 ° between them. , 334 are disposed to face each other so that four gas injection means 330 is provided radially. In addition, the source gas A and the reaction gas B are injected through the first and third gas injection means 331 and 333 by the on / off control of the gas control unit 340 of FIG. The purge gas C is injected through the fourth gas injection means 332, 334.

Subsequently, as shown in FIG. 5 (b), the source gas A is injected through the first gas injection means 331 and the second gas injection means 332 adjacent to each other in a counterclockwise direction, and is opposed thereto. The reaction gas B is injected through the fourth gas injection means 334 adjacent to the third gas injection means 333 in the counterclockwise direction. At the same time, the purge gas C is injected through the first and third gas injection means 331 and 333.

In this manner, as shown in FIGS. 5 (c) and 5 (d), the process gas previously injected from the gas injection means 330 adjacent in the clockwise direction through the gas injection means 330 adjacent in the counterclockwise direction. By spraying, a predetermined thin film is formed on the substrate.

6 (a) to 6 (f) are plan views of gas injection means sequentially shown to explain a gas supply method using a gas supply device according to another embodiment of the present invention, six gas injection in the chamber The gas supply apparatus provided with a means is demonstrated.

As shown in Fig. 6A, six gas injection means 331 to 336; 330 are arranged radially at equal intervals. For example, the first to sixth gas injection means 331 to 336 are disposed adjacent to each other in the counterclockwise direction, and the first and fourth gas injection means 331 and 334 are disposed to face each other, and the second and the second The five gas injection means 332 and 335 are disposed to face each other, and the third and sixth gas injection means 333 and 336 are disposed to face each other. These first to sixth gas injection means 331 to 336 are arranged at an angle of, for example, 60 degrees. Then, the source gas A and the reactive gas B are injected through the first and fourth gas injection means 331 and 334 by the on / off control of the gas control unit 340 of FIG. The purge gas C is injected through the third, fifth and sixth gas injection means 332, 333, 335, and 336. In this case, the purge gas C may be injected through the second and fifth gas injection means 332 and 335, and the process gas may not be injected through the third and sixth gas injection means 333 and 336. .

Subsequently, as shown in FIG. 6 (b), the source gas A is injected through the first gas injection means 331 and the second gas injection means 332 adjacent to each other in a counterclockwise direction, and is opposed thereto. The reaction gas B is injected through the fifth gas injection means 335 adjacent to the fourth gas injection means 334 in the counterclockwise direction. At the same time, the purge gas C is injected through the first, third, fourth and sixth gas injection means 331, 333, 334, and 336.

Subsequently, as shown in FIG. 6C, the raw material gas A is injected through the third gas injection means 333 adjacent to the second gas injection means 332 in the counterclockwise direction, and the second gas injection means. The reaction gas B is injected through the sixth gas injection means 336 opposite to the 332 and adjacent to the fifth gas injection means 335 in the counterclockwise direction. At the same time, the purge gas C is injected through the first, second, fourth and fifth gas injection means 331, 332, 334, and 335.

In this manner, the process gas previously injected from the gas injection means 330 adjacent in the clockwise direction through the gas injection means 330 adjacent in the counterclockwise direction as shown in FIGS. By spraying, a predetermined thin film is formed on the substrate.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention.

100: chamber 200: substrate mounting portion
300: gas injection device 310: gas storage unit
320: gas supply unit 330: gas injection means
340: gas control unit

Claims (18)

A plurality of gas injection means; And
A gas supply unit for supplying each of the gas injection means to a process gas including a source gas, a purge gas, and a reactive gas;
The plurality of gas injection means is fixed in the chamber, the gas supply device for supplying one process gas to one gas injection means and sequentially supplying the same process gas to the other gas injection means adjacent to the one gas injection means in one direction .
The gas supply apparatus according to claim 1, wherein at least four gas injection means are provided.
The gas supply of claim 2, wherein the plurality of gas injection means is supplied with a source gas and a reaction gas to two gas injection means which are not adjacent to each other, and a purge gas is supplied to at least two gas injection means positioned between them. Device.
The gas of claim 2, wherein the plurality of gas injection means are supplied with a source gas and a reactant gas to two gas injection means facing each other, and a purge gas is supplied to at least two gas injection means positioned between and opposed to each other. Feeding device.
The gas supply means according to claim 3 or 4, wherein the two gas injection means supplying the source gas and the reactive gas supply the purge gas or the process gas while the two gas injection means adjacent thereto supply the source gas and the reaction gas. The gas supply apparatus which does not supply the two gas injection means which supplied the said purge gas does not supply the source gas or the reactive gas or the process gas while the two gas injection means adjacent thereto supply the purge gas.
The gas flow control device of claim 2, further comprising a plurality of gas control units provided between the plurality of gas injection means and each of the gas supply units supplying the source gas, the purge gas, and the reactive gas, respectively. A gas supply device in which the supply amount of the process gas through the gas injection means is controlled.
A plurality of gas injection means;
A plurality of gas supply units respectively supplying process gases including a source gas, a purge gas, and a reactive gas to each of the gas injection means; And
It includes a plurality of gas control unit provided between each of the plurality of gas injection means and a plurality of gas supply pipe,
The plurality of gas injection means is fixed in the chamber, and the one gas injection means of the plurality of gas injection means sequentially supplies the source gas, the purge gas, and the reactive gas under the control of the gas control unit, and the one gas injection means. And other gas injection means adjacent to the means in one direction and the other direction to supply a process gas different from the process gas supplied to the one gas injection means.
8. The gas supply apparatus of claim 7, wherein the plurality of gas injection means is supplied with a source gas and a reactive gas to two gas injection means which are not adjacent to each other, and a purge gas is supplied to at least two gas injection means positioned between them. Device.
8. The gas supply system according to claim 7, wherein the plurality of gas injection means are supplied with a source gas and a reactant gas to two gas injection means facing each other, and a purge gas is supplied to at least two gas injection means positioned between and opposed to each other. Feeding device.
A plurality of gas injection means fixed in the chamber; And
Using a gas supply device including a gas supply unit for supplying each of the gas injection means to a process gas including a source gas, a purge gas, and a reactive gas, respectively,
The gas supply method of supplying one process gas to one gas injection means and sequentially supplying the same process gas to the other gas injection means adjacent to the one gas injection means in one direction.
The gas injection means of claim 10, wherein the plurality of gas injection means are supplied with the source gas and the reactive gas to two gas injection means facing each other, and at the same time a purge gas is supplied to the at least two gas injection means positioned between and opposed to each other. And then the purge gas is supplied to two gas injection means which supplied the source gas and the reactive gas, and the source gas and the reaction gas are supplied to the two gas injection means which supplied the purge gas.
A plurality of gas injection means radially disposed and fixed in the chamber;
A plurality of gas supply units respectively supplying process gases including a source gas, a purge gas, and a reactive gas to each of the gas injection means; And
Using a gas supply device including a plurality of gas control units provided between each of the plurality of gas injection means and a plurality of gas supply pipes,
According to the control of the gas control unit, one gas injector of the plurality of gas injectors sequentially supplies the source gas, purge gas, and reactant gas, and injects another gas adjacent to the one gas injector in one direction and another direction. Means for supplying a process gas different from the process gas supplied from said one gas injection means.
A chamber providing a reaction space;
A substrate setter provided under the chamber; And
It includes a gas supply device for supplying a process gas on the substrate placed in the substrate mounting portion,
The gas supply device,
A plurality of gas injection means disposed radially; And
A gas supply unit for supplying each of the gas injection means to a process gas including a source gas, a purge gas, and a reactive gas;
The plurality of gas injection means is fixed to the upper side of the chamber, and after supplying one process gas from one gas injection means to sequentially supply the same process gas to other gas injection means adjacent to the one gas injection means in one direction Substrate processing apparatus. The substrate processing apparatus of claim 13, wherein the substrate mounting part rotates in another direction opposite to the one direction.
A chamber providing a reaction space;
First and third gas injection means provided in positions opposite to each other on the inside of the chamber;
Second and fourth gas injection means positioned between the first and third gas injection means so as to face each other in a 30 ° to 90 ° direction; And
A gas supply device for supplying a supply gas to the plurality of gas injection means,
And a source gas or a reaction gas are supplied to the first and third gas injection means, and a purge gas is supplied to the second and fourth gas injection means.
The substrate processing apparatus according to claim 15, wherein a source gas or a reaction gas is supplied to the second and fourth gas injection means after a few seconds after the source gas or the reaction gas is supplied to the first and third gas injection means.
The substrate processing apparatus of Claim 15 which supplies a purge gas to the said 1st and 3rd gas injection means after several seconds, after supplying a raw material purge gas to the said 2nd and 4th gas injection means.
A chamber providing a reaction space;
First and third gas injection means provided in positions opposite to each other on the inside of the chamber;
Second and fourth gas injection means positioned opposite to each other in a 30 ° to 90 ° direction between the first and third gas injection means,
And said first to fourth gas injection means are provided with injection holes for injecting source gas, purge gas, and reactive gas, respectively, to sequentially spray the plurality of gases.

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