KR20120080975A - Tube of shower head, shower head and chemical vapor deposition device having the same - Google Patents

Tube of shower head, shower head and chemical vapor deposition device having the same Download PDF

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Publication number
KR20120080975A
KR20120080975A KR1020110002468A KR20110002468A KR20120080975A KR 20120080975 A KR20120080975 A KR 20120080975A KR 1020110002468 A KR1020110002468 A KR 1020110002468A KR 20110002468 A KR20110002468 A KR 20110002468A KR 20120080975 A KR20120080975 A KR 20120080975A
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KR
South Korea
Prior art keywords
gas
discharge
discharge path
chamber
shower head
Prior art date
Application number
KR1020110002468A
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Korean (ko)
Inventor
이창엽
Original Assignee
엘아이지에이디피 주식회사
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Priority to KR1020110002468A priority Critical patent/KR20120080975A/en
Publication of KR20120080975A publication Critical patent/KR20120080975A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE: A shower head and a chemical vapor depositing device are provided to improve the efficiency of a manufacturing process by reducing the number of installation processes. CONSTITUTION: A first gas is discharged through a first discharge path(251). A second gas is discharged through a second discharge path(252). The second discharge path is separated from the first discharge path. The first gas and the second gas are respectively supplied to the first discharge path and the second discharge path through different supply surfaces. The first gas and the second gas are discharged from the first discharge path and the second discharge path through the same discharge surface.

Description

Discharge tube for shower head, shower head and chemical vapor deposition apparatus using the same {Tube of Shower head, shower head and chemical vapor deposition device having the same}

The present invention relates to a discharge tube for a shower head, a shower head and a chemical vapor deposition apparatus using the same, and more particularly, a discharge tube for a shower head used to form a crystal layer on a substrate using a III-V material It relates to a showerhead and a chemical vapor deposition apparatus using the same.

The nitride material is best known as a material for manufacturing a light emitting device. The laminated structure of a light emitting device using a nitride material generally has a buffer layer made of GaN crystals, an n-type doped layer made of n-type GaN crystals, an active layer made of InGaN, and p-type GaN formed on a substrate such as sapphire. It has a structure in which the type doping layer is sequentially laminated. Each of these crystal layers is sequentially deposited in a chemical vapor deposition apparatus.

The chemical vapor deposition apparatus includes a chamber, a showerhead for injecting process gas into the chamber, a susceptor facing the showerhead to support the substrate, and a heater for heating the substrate. In such a chemical vapor deposition apparatus, a process gas is supplied into a chamber and a substrate supported by a susceptor is heated, whereby a raw material included in the process gas reacts chemically on the surface of a substrate to form a crystal layer.

Meanwhile, in order to form the crystal layer of the light emitting device as described above, trimetal gallium (TMGa), trimetal indium (TMI), and trimetal aluminum (TMA), which are Group III gases, are formed. ) And ammonia (NH 3), which is a group V gas, may be used. Accordingly, the shower head is connected to a separate separate supply pipe for separately supplying the group III gas and the group V gas.

In addition, when the showerhead is heated to a predetermined temperature or more according to a process environment formed at a high temperature, process gas discharged to the chamber through the showerhead may react with the showerhead to deposit or form particles in the showerhead. In order to prevent this phenomenon, a cooling circulation path is installed to maintain the temperature of the shower head below a predetermined temperature. Accordingly, the shower head is coupled to a number of discharge pipes so that the process gas can be discharged to the chamber without leaking into the cooling circuit, the discharge pipes are brazed to the shower head.

Therefore, the shower head should be configured to reduce the number of supply pipes or discharge pipes connected to the shower head to reduce the installation work.

An object of the present invention is to provide a discharge pipe for a shower head to reduce the installation work of the supply pipe for supplying the process gas and the discharge pipe discharged from the process gas, the shower head and chemical vapor deposition apparatus using the same.

The discharge pipe for the shower head according to the present invention is formed with a first discharge path for discharging the first gas, and a second discharge path for discharging the second gas spaced apart from the first discharge path, the first discharge path and The second discharge passage is respectively supplied to the first discharge passage and the second discharge passage through different supply surfaces of the first gas and the second gas, and the first gas and the second gas discharge the same. It may be formed to be discharged from the first discharge path and the second discharge path through the surface, respectively.

The discharge amount of the second gas may be greater than the discharge amount of the first gas, and the number of the second discharge paths may be greater than the number of the first discharge paths.

The second discharge path may be formed in plural in the peripheral portion of the first discharge path.

The shower head according to the present invention includes a main body, a first gas chamber provided inside the main body and supplied with a first gas, and a second gas chamber provided under the first gas chamber and supplied with a second gas; And a discharge pipe having a first discharge path communicating with the first gas chamber and a discharge path spaced apart from the first discharge path and communicating with the second gas chamber, respectively, the first discharge path and the The second discharge path may be formed such that the first gas and the second gas are discharged from the first discharge path and the second discharge path, respectively, through the same discharge surface.

The discharge amount of the second gas may be greater than the discharge amount of the first gas, and the number of the second discharge paths may be greater than the number of the first discharge paths.

The second discharge path may be formed in plural in the peripheral portion of the first discharge path.

The shower head communicates with the first gas chamber to supply the first gas to the first gas chamber, and the second gas chamber communicates with the second gas chamber to supply the second gas to the second gas chamber. It may further include a second gas supply pipe for supplying.

The shower head may further include a cooling chamber provided under the second gas chamber to circulate a refrigerant therein.

Meanwhile, the chemical vapor deposition apparatus according to the present invention includes a process chamber, a susceptor disposed in the process chamber to support a substrate, and a shower head injecting a first gas and a second gas into the process chamber. The shower head includes a main body, a first gas chamber provided inside the main body and supplied with a first gas, a second gas chamber provided under the first gas chamber and supplied with a second gas, and A first discharge passage communicating with a first gas chamber, and a discharge tube spaced apart from the first discharge passage, and having a discharge passage communicating with the second gas chamber, respectively, wherein the first discharge passage and the second discharge passage are formed. The discharge path may be formed such that the first gas and the second gas are respectively discharged from the first discharge path and the second discharge path through the same discharge surface.

The discharge amount of the second gas may be greater than the discharge amount of the first gas, and the number of the second discharge paths may be greater than the number of the first discharge paths.

The second discharge path may be formed in plural in the peripheral portion of the first discharge path.

The shower head communicates with the first gas chamber to supply the first gas to the first gas chamber, and the second gas chamber communicates with the second gas chamber to supply the second gas to the second gas chamber. It may further include a second gas supply pipe for supplying.

The shower head may further include a cooling chamber provided under the second gas chamber to circulate a refrigerant therein.

The shower head discharge tube according to the present invention, the shower head and the chemical vapor deposition apparatus using the same can reduce the installation work maneuver and can easily manufacture the shower head, there is an effect that can reduce the manufacturing cost of the shower head.

1 is a cross-sectional view showing a chemical vapor deposition apparatus according to the present embodiment.
2 is a cross-sectional view showing a showerhead of the chemical vapor deposition apparatus according to the present embodiment.
3 is a cross-sectional perspective view showing the discharge tube of the chemical vapor deposition apparatus according to the present embodiment.

Hereinafter, the chemical vapor deposition apparatus according to the present embodiment will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view showing a chemical vapor deposition apparatus according to the present embodiment.

Referring to FIG. 1, the chemical vapor deposition apparatus 100 includes a process chamber 110. In the upper portion of the process chamber 110 is provided a shower head 200 for injecting a process gas supplied from a gas supply device (not shown) into the process chamber 110. The showerhead 200 will be described in detail with reference to the accompanying drawings hereinafter.

The susceptor 120 is disposed inside the process chamber 110 to face the shower head 200. The upper surface of the susceptor 120 is formed with a substrate receiving groove 121 for receiving the substrate 10. The substrate receiving groove 121 may be formed in plural so as to form the same crystal layer on the plurality of substrates 10.

A rotating shaft 130 supporting the susceptor 120 and allowing the susceptor 120 to rotate is disposed below the susceptor 120. The rotating shaft 130 passes through the lower portion of the process chamber 110 and is connected to the rotating motor by a power transmission device (not shown) and rotated by the rotating motor.

As such, the susceptor 120 is rotatably configured. Therefore, the crystal layers deposited on the plurality of substrates 10 supported by the susceptor 120 may be formed to have the same thickness.

Although not shown, a heating means for heating the susceptor 120 may be installed under the susceptor 120 so that the substrate 10 may be chemically reacted with the raw materials included in the process gas. . In addition, although not shown, the process chamber 110 may be provided with an exhaust means so that the vacuum atmosphere of the process chamber 110 can be produced.

Since the heating means and the exhaust means are already known techniques, detailed description thereof will be omitted.

2 is a cross-sectional view showing a shower head of the chemical vapor deposition apparatus according to the present embodiment, Figure 3 is a cross-sectional perspective view showing a discharge tube of the chemical vapor deposition apparatus according to the present embodiment.

2 and 3, the showerhead 200 includes a main body 210. The main body 210 has four flat plates 211, 212, 213 and 214 spaced apart from each other, and the outer wall 215 is coupled to the edges of the flat plates 211, 212, 213 and 214. Three chambers are formed between 211, 212, 213 and 214, respectively, which can be divided into a first gas chamber 220, a second gas chamber 230 and a cooling chamber 240 from above. have.

A first gas supply pipe 221 for supplying the first gas G1 is connected to the first gas chamber 220. A second gas supply pipe 231 for supplying the second gas G2 is connected to the second gas chamber 230. The cooling chamber 240 is connected to the refrigerant supply pipe (C) for supplying the refrigerant.

The first gas chamber 220, the second gas chamber 230, and the cooling chamber 240 are formed with discharge pipe insertion holes 250a coaxial with each other, and the discharge pipe 250 is inserted into the discharge pipe insertion holes 250a. And brazing.

The discharge tube 250 allows the first gas G1 and the second gas G2 to be discharged into the process chamber 110 through different paths. That is, the discharge pipe 250 is spaced apart from the first discharge passage 251 and the first discharge passage 251 communicating with the first gas chamber 220, and the second discharge passage communicating with the second gas chamber 230. The furnace 252 is formed. The discharge pipe 250 may be manufactured by a method of hole-processing the first discharge path 251 and the second discharge path 252 in the rod full.

The first discharge path 251 and the second discharge path 252 are formed such that the discharge surfaces of the first gas G1 and the second gas G2 are the same. Accordingly, the first gas G1 discharged through the first discharge path 251 and the second gas G2 discharged through the second discharge path 252 may be the first gas G1 in the process chamber 110. ) And the second gas G2 may be smoothly mixed.

The discharge pipe 250 is provided in plural and spaced apart at equal intervals with respect to the entire area of the shower head 200. Therefore, the first gas G1 and the second gas G2 may be sprayed in a uniform distribution in the process chamber 110.

The amount of the first gas G1 and the second gas G2 used in the deposition process may be adjusted according to the number of the first discharge path 251 and the second discharge path 252.

For example, in order to form the crystal layer of the light emitting element as described above, any one of the above-mentioned Group 3 gas or Group 5 gas is used as the first gas G1, and the above-mentioned second gas G2 is used. When using the other one of the Group 3 gas or Group 5 gas, the amount of the second gas (G2) may be used more than the amount of the first gas (G1). Therefore, the discharge amount of the second gas G2 discharged through the second discharge path 252 should be larger than the discharge amount of the first gas G1 discharged through the first discharge path 251. Accordingly, the first discharge passage 251 is formed in one, and the second discharge passage 252 is formed in plural in the periphery of the first discharge passage 251 so that the discharge amount of the first gas G1 and the second gas ( The discharge amount of G2) can be adjusted.

The number of the first discharge path 251, the number of the second discharge paths 252, and the arrangement of the first discharge path 251 and the second discharge path 252 may include the first gas G1 and the second gas ( Depending on the amount of use G2) can be changed.

As such, the shower head 200 used in the chemical vapor deposition apparatus 100 according to the present exemplary embodiment has an independent discharge path of the first gas G1 and the second gas G2 in one discharge tube 250. Since it can be formed, the number of discharge pipes 250 used in the shower head 200 can be significantly reduced. Therefore, the chemical vapor deposition apparatus 100 according to the present embodiment may reduce the number of discharge pipes 250 installed in the shower head 200, thereby reducing the number of installation work of the discharge pipe 250.

On the other hand, although not shown, the cooling chamber 240 may be formed with a refrigerant circulation path to the refrigerant is purified. Since the refrigerant circulation path is already known, a detailed description thereof will be omitted.

Hereinafter, the operation of the chemical vapor deposition apparatus according to the present embodiment will be described.

Referring to FIG. 1, the substrate 10 is loaded into the process chamber 110 and supported by the susceptor 120. In this case, the plurality of substrates 10 may be supported together on the susceptor 120 so that the same crystal layer may be formed on the plurality of substrates 10 by one deposition process. As such, when the substrate 10 is seated on the susceptor 120, the process chamber 110 is sealed.

Subsequently, exhaust of the process chamber 110 is performed by an exhaust pump (not shown), whereby a vacuum atmosphere is produced inside the process chamber 110.

Subsequently, a heater (not shown) heats the susceptor 120 so that the substrate 10 may reach a temperature at which the substrate 10 may chemically react with the raw material included in the process gas. In addition, as the rotating shaft 130 is rotated, the susceptor 120 is rotated together with the rotating shaft 130.

Subsequently, process gas is supplied into the process chamber 110 through the shower head 200.

Referring to FIG. 2, the first gas G1 is supplied to the first gas chamber 220 through the first gas supply pipe 221. The first gas G1 strikes the inner wall of the first gas chamber 220 and diffuses in the first gas chamber 220 before being discharged to the process chamber 110.

In addition, the second gas G2 is supplied to the second gas chamber 230 through the second gas supply pipe 231. The second gas G2 strikes the inner wall of the second gas chamber 230 and diffuses in the first gas chamber 220 before being discharged into the process chamber 110.

Subsequently, the first gas G1 is supplied to the first discharge path 251 and discharged to the process chamber 110 through the first discharge path 251. In addition, the second gas G2 is supplied to the second discharge path 252 and discharged to the process chamber 110 through the second discharge path 252.

The first gas G1 and the second gas G2 simultaneously discharged to the process chamber 110 are mixed with each other in the process chamber 110, and the first gas G1 and the second gas G2 are mixed with each other. The included raw material is deposited to a uniform thickness on the substrate 10 to form a crystal layer.

On the other hand, the refrigerant is supplied into the cooling chamber 240 and the refrigerant is circulated to heat the body 210 of the shower head 200 to a predetermined temperature or more to prevent particles from being deposited on the surface of the shower head 200. .

As such, the chemical vapor deposition apparatus 100 according to the present exemplary embodiment forms a first discharge passage 251 and a second discharge passage 252 spaced apart from each other in one discharge tube 250. The first gas G1 and the second gas G2 may be discharged into the process chamber 110 through the discharge path 251 and the second discharge path 252.

100: chemical vapor deposition apparatus 110: process chamber
120: susceptor 200: shower head
210: main body 220: first gas chamber
230: second gas chamber 240: cooling chamber
250: discharge tube 251: first discharge path
252: second discharge route

Claims (14)

A first discharge path through which the first gas is discharged and a second discharge path through which the second gas is discharged apart from the first discharge path;
The first discharge path and the second discharge path
The first gas and the second gas are respectively supplied to the first discharge path and the second discharge path through different supply surfaces,
And the first gas and the second gas are respectively discharged from the first discharge path and the second discharge path through the same discharge surface. The method of claim 1,
The discharge amount of the second gas is greater than the discharge amount of the first gas,
The discharge pipe for a shower head, characterized in that the number of the second discharge passage is formed more than the number of the first discharge passage. The method of claim 2,
And a plurality of the second discharge passages are formed in a peripheral portion of the first discharge passage. With the body,
A first gas chamber provided inside the main body and supplied with a first gas;
A second gas chamber provided under the first gas chamber and supplied with a second gas;
A discharge pipe having a first discharge path communicating with the first gas chamber and a discharge path spaced apart from the first discharge path and communicating with the second gas chamber, respectively;
And the first discharge path and the second discharge path are configured to discharge the first gas and the second gas from the first discharge path and the second discharge path, respectively, through the same discharge surface. . The method of claim 4, wherein
The discharge amount of the second gas is greater than the discharge amount of the first gas,
The number of the second discharge path is a shower head, characterized in that formed more than the number of the first discharge path. 6. The method of claim 5,
And a plurality of the second discharge passages are formed in the periphery of the first discharge passage. The method of claim 4, wherein
A first gas supply pipe communicating with the first gas chamber and supplying the first gas to the first gas chamber;
And a second gas supply pipe communicating with the second gas chamber and supplying the second gas to the second gas chamber. 5. The showerhead of claim 4, further comprising a cooling chamber disposed below the second gas chamber to circulate a refrigerant therein. Process chamber,
A susceptor disposed in the process chamber to support a substrate;
Including a shower head for injecting a first gas and a second gas into the process chamber,
The shower head
With the body,
A first gas chamber provided inside the main body and supplied with a first gas;
A second gas chamber provided under the first gas chamber and supplied with a second gas;
A discharge pipe having a first discharge path communicating with the first gas chamber and a discharge path spaced apart from the first discharge path and communicating with the second gas chamber, respectively;
Wherein the first discharge path and the second discharge path are formed such that the first gas and the second gas are discharged from the first discharge path and the second discharge path through the same discharge surface, respectively. Vapor deposition apparatus. The method of claim 9,
The discharge amount of the second gas is greater than the discharge amount of the first gas,
Chemical vapor deposition apparatus characterized in that the number of the second discharge path is formed more than the number of the first discharge path. The method of claim 10,
And a plurality of the second discharge passages are formed in the periphery of the first discharge passage. The chemical vapor deposition apparatus according to claim 10, wherein the first gas is a group III gas, and the second gas is a group V gas. The method of claim 9, wherein the showerhead
A first gas supply pipe communicating with the first gas chamber and supplying the first gas to the first gas chamber;
And a second gas supply pipe communicating with the second gas chamber and supplying the second gas to the second gas chamber. The method of claim 9, wherein the showerhead
The chemical vapor deposition apparatus further comprises a cooling chamber provided below the second gas chamber to circulate a refrigerant therein.

KR1020110002468A 2011-01-10 2011-01-10 Tube of shower head, shower head and chemical vapor deposition device having the same KR20120080975A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020110002468A KR20120080975A (en) 2011-01-10 2011-01-10 Tube of shower head, shower head and chemical vapor deposition device having the same

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Application Number Priority Date Filing Date Title
KR1020110002468A KR20120080975A (en) 2011-01-10 2011-01-10 Tube of shower head, shower head and chemical vapor deposition device having the same

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KR20120080975A true KR20120080975A (en) 2012-07-18

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018520516A (en) * 2015-06-17 2018-07-26 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Gas control in the processing chamber
WO2021102726A1 (en) * 2019-11-27 2021-06-03 东莞市中镓半导体科技有限公司 Linear spray head for gan material growth

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018520516A (en) * 2015-06-17 2018-07-26 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Gas control in the processing chamber
WO2021102726A1 (en) * 2019-11-27 2021-06-03 东莞市中镓半导体科技有限公司 Linear spray head for gan material growth

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