KR20120072039A - Resonator for fast signal response - Google Patents

Resonator for fast signal response Download PDF

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Publication number
KR20120072039A
KR20120072039A KR1020100133803A KR20100133803A KR20120072039A KR 20120072039 A KR20120072039 A KR 20120072039A KR 1020100133803 A KR1020100133803 A KR 1020100133803A KR 20100133803 A KR20100133803 A KR 20100133803A KR 20120072039 A KR20120072039 A KR 20120072039A
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KR
South Korea
Prior art keywords
transistor
signal
transistors
source
tank
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KR1020100133803A
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Korean (ko)
Inventor
박봉혁
정재호
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한국전자통신연구원
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Priority to KR1020100133803A priority Critical patent/KR20120072039A/en
Publication of KR20120072039A publication Critical patent/KR20120072039A/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1275—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having further means for varying a parameter in dependence on the frequency
    • H03B5/1287—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having further means for varying a parameter in dependence on the frequency the parameter being a quality factor, e.g. Q factor of the frequency determining element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
    • H03B2201/02—Varying the frequency of the oscillations by electronic means
    • H03B2201/0208—Varying the frequency of the oscillations by electronic means the means being an element with a variable capacitance, e.g. capacitance diode

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Abstract

The present invention includes a first transconductor for receiving a voltage signal, converting the signal into a current signal, and outputting the first signal; an LC tank for extracting and outputting only a signal having a desired frequency from the signal output by the first transconductor; And a second transconductor for increasing the quality factor of the output signal.

Figure P1020100133803

Description

Resonator for Fast Signal Response

The present invention relates to a resonator, and more particularly, to a resonator having a band pass characteristic and applied to a filter for a high speed signal response.

A resonator has an impedance close to open or short at a particular frequency, and thus has a frequency selective characteristic for that frequency. A typical resonator having such a frequency selective function is an LC resonator. When the LC resonators are connected in series, they have the same effect as being opened at the resonant frequency, and when connected in parallel, the effects are as shorted at the resonant frequency. In addition, there are various types of resonators including a cavity resonator or a dielectric resonator.

Such resonators can be used to create filters that filter out the desired frequency using frequency selective characteristics, or to make an amplifier of the desired frequency into an oscillating circuit at a specific frequency. When a resonator is applied to a filter, it is possible to remove interference with adjacent frequency channels by sending signals of various frequencies through one radio line.

The present invention provides a resonator capable of increasing selectivity by improving a quality factor that exhibits bandpass filter characteristics and at the same time exhibits the performance of an oscillator.

The present invention provides a resonator capable of obtaining a high gain.

The present invention provides a first transconductor for receiving a voltage signal and converting the signal into a current signal, and outputting a LC tank for extracting and outputting only a signal having a desired frequency from the signal output by the first transconductor. And a second transconductor for increasing the quality factor of the signal output by the tank.

According to the present invention, the high-speed signal response resonator employs two transconductors and an LC tank to improve the selectivity by improving the quality factor that exhibits the bandpass filter characteristics and the performance of the oscillator. High gain.

1 is a circuit diagram of a high speed signal response resonator according to a preferred embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout.

In the following description of the present invention, when it is determined that detailed descriptions of related known functions or configurations may unnecessarily obscure the gist of the embodiments of the present invention, the detailed description thereof will be omitted.

Terms used throughout the specification are terms defined in consideration of functions in the embodiments of the present invention, and may be sufficiently modified according to the intention, custom, etc. of the user or operator, and the definitions of these terms are used throughout the specification of the present invention. It should be made based on the contents.

The present invention is designed to have a high-speed signal response by using an LC resonator to be applied to the filter is a resonator applied to the bandpass filter using two transconductors and LC tank and at the same time improve the quality factor (Quality factor) selectivity Increase In addition, a high gain is obtained by configuring a positive feedback load.

1 is a block diagram of a high-speed signal response resonator according to a preferred embodiment of the present invention.

Referring to FIG. 1, the high speed signal response resonator has a form in which the first transconductor 101, the second transconductor 102, the LC tank 103, and the active feedback load 104 are connected in parallel.

The first transconductor 101 receives a negative voltage signal Input_n and a positive voltage signal Input_p and converts the current signal into a current signal. According to a preferred embodiment of the present invention, the first transconductor 101 is a transistor (M1, M2) (11, 12) constituting a current source, transistors (M3, M4, M5, M6) (13, 14, 15, 16 and transistors M7, M8, M9, M10 (17, 18, 19, 20) for converting input voltage signals Input_n, Input_p into current signals.

Although an n-channel metal oxide semiconductor field effect transistor is illustrated as a transistor in FIG. 1, the present invention is not limited thereto.

Referring to Figure 1, M1 (11) and M2 (12) is a transistor that configures a current source to supply a constant current as described above, each source is connected to the ground terminal, each gate has a resistor (32, 33 is connected to a bias voltage source for supplying a predetermined voltage b1.

M3 (13), M4 (14), M5 (15), and M6 (16) are transistors that improve linearity by preventing the linearity characteristic due to the current flowing in the resonator from being greatly changed. In the diode-connected form, Connected. That is, the gates of M3 (13), M4 (14), M5 (15), and M6 (16) each have a form connected to their drains. By connecting in the form of a diode connection in this way, linearity is superior to that in the case of simply using a resistor. That is, in the case of a resistor, gm (=) is fixed as the current flowing through the resistor is changed. In the case of a diode connection transistor, gm (=) is fixed. In the case of a diode connection transistor, gm is changed in proportion to the current. (differential) The linearity of the amplifier is improved. The sources of M3 (13) and M4 (14) are connected to the drains of M1 (11) forming a current source, and the sources of M5 (15) and M6 (16) are connected to the drains of M2 (12) forming a current source. do.

M7 (17), M8 (18), M9 (19), and M10 (20) are transistors for converting an input voltage signal into a current signal, and M3 (13), M4 (14), M5 (15), and M6 ( 16) in series configuration. That is, respective sources of M7 (17), M8 (18), M9 (19), and M10 (20) are connected to the drains of M3 (13), M4 (14), M5 (15), and M6 (16). . The negative voltage signal Input_n is input to the gates of M7 17 and M9 19, and the positive voltage signal Input_p is input to the gates of M8 18 and M10 20. . Therefore, the input voltage Input_n and Input_p signals are converted into current signals by M7 (17), M8 (18), M9 (19), and M10 (20) and output. The drains of M7 17 and M9 19 are connected to node A of LC tank 103, and the drains of M8 18 and M11 20 are connected to node B of LC tank 103.

The LC tank 103 functions to extract only a signal of a desired frequency from the signal output by the first transconductor 101, and includes an inductor 31 and a varactor 29, 30. In detail, an inductor 31 and two varactors 29 and 30 are formed in parallel between two output terminals of the first transconductor 101. Then, a control voltage Vctrl is applied between the two varactors 29 and 30 to set and adjust the operation of the LC tank 103.

The second transconductor 102 improves the Q factor of the entire resonator in order to increase the selectivity of the signal arriving at the output nodes Output_n and Output_p. Q (Quality factor) at resonance means the frequency selective characteristic quality. The difference between the frequencies of the resonant frequency points at 3dB, i.e. half attenuation, is called the 3dB bandwidth. The Q value is the resonant frequency divided by the 3dB bandwidth. In other words, the sharper the resonance characteristic, the narrower the 3dB bandwidth becomes, and eventually the Q value becomes larger. Accordingly, the second transconductor 102 includes M15 25, M16 26, M17 27 and M18 28, which are transistors that act as transconductors to improve the Q factor. That is, the addition of the second transconductor 102 increases the signal magnitude of the overall circuit and improves the Q factor.

In addition, the second transconductor 102 further includes M13 (23) and M14 (24), which are transistors serving as current sources.

Referring to Figure 1, M13 (23) and M14 (24) is a transistor that configures a current source to supply a constant current as described above, each source is connected to the ground terminal, each gate has a resistor (34, It is connected to a bias voltage source b2 that supplies a predetermined voltage b2 through 35.

M15 (25), M16 (26), M17 (27), and M18 (28) are transistors that act as transconductors to improve the Q factor, and the signals arriving at the output node Output_p are M15 (25) and M17 ( 27 is input to the drain of the M16 (26) and M18 (28). M15 25 and M17 27 are connected to each other at the gate, and M16 26 and M18 28 are connected to each other at the gate. The sources of M15 (15) and M16 (16) are connected to the drains of M13 (23) forming a current source, and the sources of M17 (27) and M18 (28) are connected to the drains of M14 (24) forming a current source. do.

Figure pat00001
The active feedback load 104 adjusts to have the characteristic that the overall gain of the signal by the output nodes Output_p, Output_n is increased. The active feedback load 104 becomes the impedance when viewed from the A and B nodes, thereby reducing the resistance component of the inductor 31 itself, thereby increasing the output signal size and increasing the Q factor of the entire circuit. Bring it. Specifically, the DC power supply VDD is connected to the drains of the two transistors M11 and M12 21 and 22, and the drains of the two transistors M11 and M12 21 and 22 are fed back to their counterparts. Has the form

Therefore, the signal of the desired frequency is extracted by the LC tank 103 from the signal output from the first transconductor 101, and the signal extracted by the LC tank 103 is the quality factor by the second conductor 102. Is adjusted to a large signal, and the active feedback load 104 reduces the resistance component of the inductor 31 of the LC tank 31 itself, thereby increasing the gain of the signal extracted by the LC tank 103.

Claims (14)

A first transconductor for receiving a voltage signal and converting the voltage signal into a current signal;
An LC tank for extracting and outputting only a signal having a desired frequency from the signal output by the first transconductor;
And a second transconductor for increasing the quality factor of the signal output by the LC tank.
The method of claim 1, wherein the first transconductor is
Transistors that receive a voltage signal and convert it into a current signal;
Transistors for maintaining linearity,
A high speed signal response resonator comprising transistors constituting a current source.
The method of claim 2, wherein the transistor
A high-speed signal response resonator characterized in that it is an N-Channel Metal-Oxide Semiconductor Field Effect Transistor. 3. The transistor of claim 2, wherein the transistors constituting the current source are
Wherein each source is connected to a ground terminal and each gate is connected to a bias voltage source for supplying a predetermined voltage through a resistor.
The transistor of claim 2, wherein the transistors for maintaining linearity are
A high-speed signal response resonator, wherein each gate is connected to its drain.
The transistor of claim 2, wherein the transistor for maintaining linearity is
A high speed signal response resonator, characterized in that each source is connected to a drain of a transistor constituting the current source.
The transistor of claim 2, wherein the transistor converts the input voltage signal into a current signal.
And a transistor connected in series with each of the transistors for maintaining the linearity.
The transistor of claim 2, wherein the transistors convert the input voltage signal into a current signal.
Each source is connected to a respective drain of the transistor for maintaining the linearity,
A negative voltage signal input to the gate of some of the transistors is input, a positive voltage signal is input to the gate of some of the transistors,
And wherein each drain is connected to an output terminal.
The method of claim 1, wherein the LC tank is
With an inductor,
High speed signal response resonator comprising two varistors connected in series.
The method of claim 9,
And a control voltage is applied between the two varactors.
The method of claim 1, wherein the second transconductor
A transistor constituting the current source,
And a transistor for increasing a quality factor of the signal output from the LC tank.
The transistor of claim 11, wherein the transistor constituting the current source comprises:
Wherein each source is connected to a ground terminal and each gate is connected to a bias voltage source for supplying a predetermined voltage through a resistor.
12. The transistor of claim 11 wherein the transistor for increasing the quality factor is
The signal arriving at the output node is input to each drain,
Connected between gates,
Each source is connected to a drain of a transistor forming a current source.
The method of claim 1,
Further comprising an active feedback load connected in parallel to the LC tank,
And a DC power supply connected to the sources of the two transistors, and the drains of the two transistors are fed back to their counterparts and connected to the LC tank at the same time.
KR1020100133803A 2010-12-23 2010-12-23 Resonator for fast signal response KR20120072039A (en)

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