KR20120048379A - Method to produce metal telluride using alkylsilyltellurium and alkylamidometal - Google Patents
Method to produce metal telluride using alkylsilyltellurium and alkylamidometal Download PDFInfo
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- KR20120048379A KR20120048379A KR1020100109983A KR20100109983A KR20120048379A KR 20120048379 A KR20120048379 A KR 20120048379A KR 1020100109983 A KR1020100109983 A KR 1020100109983A KR 20100109983 A KR20100109983 A KR 20100109983A KR 20120048379 A KR20120048379 A KR 20120048379A
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- tellurium
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- metal
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 14
- 239000002184 metal Substances 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title claims description 14
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 title description 2
- -1 trialkylsilyl tellurium Chemical compound 0.000 claims abstract description 22
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 20
- 238000003756 stirring Methods 0.000 claims description 7
- 125000000217 alkyl group Chemical group 0.000 claims description 6
- 150000002736 metal compounds Chemical class 0.000 claims description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 230000002194 synthesizing effect Effects 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 abstract description 17
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract description 13
- 239000007788 liquid Substances 0.000 abstract description 9
- 239000002994 raw material Substances 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 150000002739 metals Chemical class 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 4
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 10
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 7
- 238000005160 1H NMR spectroscopy Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000000706 filtrate Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- MZRVEZGGRBJDDB-UHFFFAOYSA-N n-Butyllithium Substances [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 5
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- DDJAGKOCVFYQOV-UHFFFAOYSA-N tellanylideneantimony Chemical compound [Te]=[Sb] DDJAGKOCVFYQOV-UHFFFAOYSA-N 0.000 description 4
- 150000003498 tellurium compounds Chemical class 0.000 description 4
- UHOVQNZJYSORNB-MZWXYZOWSA-N benzene-d6 Chemical compound [2H]C1=C([2H])C([2H])=C([2H])C([2H])=C1[2H] UHOVQNZJYSORNB-MZWXYZOWSA-N 0.000 description 3
- VDDXNVZUVZULMR-UHFFFAOYSA-N germanium tellurium Chemical compound [Ge].[Te] VDDXNVZUVZULMR-UHFFFAOYSA-N 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- DCFKHNIGBAHNSS-UHFFFAOYSA-N chloro(triethyl)silane Chemical compound CC[Si](Cl)(CC)CC DCFKHNIGBAHNSS-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- DLEDOFVPSDKWEF-UHFFFAOYSA-N lithium butane Chemical compound [Li+].CCC[CH2-] DLEDOFVPSDKWEF-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910001509 metal bromide Inorganic materials 0.000 description 2
- 229910001510 metal chloride Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000011232 storage material Substances 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- HGUFODBRKLSHSI-UHFFFAOYSA-N 2,3,7,8-tetrachloro-dibenzo-p-dioxin Chemical compound O1C2=CC(Cl)=C(Cl)C=C2OC2=C1C=C(Cl)C(Cl)=C2 HGUFODBRKLSHSI-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- ZUSRFDBQZSPBDV-UHFFFAOYSA-N n-[bis(dimethylamino)stibanyl]-n-methylmethanamine Chemical compound CN(C)[Sb](N(C)C)N(C)C ZUSRFDBQZSPBDV-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/02—Elemental selenium or tellurium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/04—Binary compounds including binary selenium-tellurium compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/30—Germanium compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/90—Antimony compounds
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/85—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
Abstract
In the present invention, a compound of metal and tellurium is prepared using trialkylsilyl tellurium and alkyl amido metal compound which are liquid at room temperature. The raw materials can easily be used in chemical vapor deposition equipment for semiconductor manufacturing to form compounds of metals and tellurium on large substrates.
Description
The present invention relates to a method for synthesizing a tellurium compound, and more particularly, to a method for synthesizing a metal-tellurium material using an alkylsilyl tellurium compound and an alkylamido metal compound.
The unique physical properties of tellurium and other metal compounds serve many purposes. Tellurium compounds having a large difference in optical and electrical properties between crystalline and amorphous states are used as information storage materials for recording discs (CD-RW, DVD-RW). As the information storage material of the phase change memory, a solid mixed with a divalent germanium-tellurium compound (GeTe) and a trivalent antimony-tellurium compound (Sb 2 Te 3 ) into one phase is used. In addition, bismuth-tellurium or antimony-tellurium compounds are used as thermoelectric conversion devices that produce electricity directly from temperature differences.
Compounds containing tellurium and compounds of other metals may be reacted to form metals and tellurium compounds. An example of forming a thin film by reacting an alkylsilyl tellurium compound with a metal chloride or metal bromide compound has been reported (US Patent Publication No. US2010 / 0009078 “Synthesis and Use of Precursors for ALD of Tellurium and Selenium Thin Films”). (Me 3 Si) 2 to form a Te, (Et 3 Si) 2 Te, (Me 2 tBu) 2 Te , etc. of the tellurium compound and GeBr 2, GeCl 2? Dioxin (dioxane), SbCl 3 by reacting GST 225 It was. However, the alkylsilyl tellurium compound used here is a liquid at room temperature, but the metal chloride or metal bromide compound is solid at room temperature, so it is difficult to use in an apparatus for forming a film of uniform thickness on a large-area substrate.
It is an object of the present invention to provide a method for forming a compound of metal and tellurium using raw materials that are liquid at room temperature.
In order to achieve the above object, the present invention provides a method for preparing a compound of metal and tellurium using trialkylsilyl tellurium and alkyl amido metal compounds which are liquid at room temperature.
According to the method provided by the present invention, it is possible to form a compound of metal and tellurium using raw materials that are liquid at room temperature. The raw materials can easily be used in chemical vapor deposition equipment for semiconductor manufacturing to form compounds of metals and tellurium on large substrates.
FIG. 1 shows a scanning electron microscope (SEM) image and an energy dispersive X-ray analysis (EDX) spectroscopic spectrum of an antimony-tellurium powder prepared by mixing (TES) 2 Te and (Me 2 N) 3 Sb. will be.
FIG. 2 shows SEM images and EDX spectral spectra of germanium-tellurium powders synthesized by mixing (TES) 2 Te and (Me 2 N) 4 Ge compounds.
Hereinafter, the present invention will be described in more detail.
The present invention relates to a method for synthesizing metal-tellurium, which comprises stirring an alkylsilyl tellurium compound and an alkylamido metal compound.
Since the alkylsilyl tellurium compound and the alkyl amido metal compound are liquid at room temperature, these materials can be easily used in chemical vapor deposition equipment for semiconductor manufacturing to form a compound of metal and tellurium on a large-area substrate.
The alkylsilyl tellurium compound may be represented by the following formula (1).
[Formula 1]
[(R 1 R 2 R 3 ) Si] 2 Te
However, in Chemical Formula 1, R 1 , R 2 , and R 3 are each an alkyl group having 1 to 4 carbon atoms.
More specifically, the alkylsilyl tellurium compound may be (Me 3 Si) 2 Te, (Et 3 Si) 2 Te, (Me 2 t Bu) 2 Te, or the like, preferably (Et 3 Si) 2 Te Is more stable than (Me 3 Si) 2 Te and is therefore preferred for use.
The alkylamido metal compound may be represented by the following formula (2).
[Formula 2]
[(R 4 R 5 ) N] n M
In
Specifically, in Formula 2, M may be Ti, Ga, Ge, Zr, In, Sn, Sb, Hf, or Bi. More specifically, the alkylamido metal compound is (Me 2 N) 4 Ti, (Et 2 N) 4 Ti, (EtMeN) 4 Ti, (Me 2 N) 3 Ga, (Et 2 N) 3 Ga, (EtMeN ) 3 Ga, (Me 2 N) 4 Ge, (Et 2 N) 4 Ge, (EtMeN) 4 Ge, (Me 2 N) 4 Zr, (Et 2 N) 4 Zr, (EtMeN) 4 Zr, (Me 2 N) 3 In, (Et 2 N) 3 In, (EtMeN) 3 In, (Me 2 N) 4 Sn, (Et 2 N) 4 Sn, (EtMeN) 4 Sn, (Me 2 N) 3 Sb, (Et 2 N) 3 Sb, (EtMeN) 3 Sb, (Me 2 N) 4 Hf, (Et 2 N) 4 Hf, (EtMeN) 4 Hf, (Me 2 N) 3 Bi, (Et 2 N) 3 It may be a compound such as Bi, (EtMeN) 3 Bi.
In the present invention, Me represents a methyl group, Et represents an ethyl group, t Bu represents a t-butyl group.
Hereinafter, the present invention will be described in detail with reference to specific examples, but the scope of the present invention is not limited to these examples.
Manufacturing example One : Bis (triethylsilyl) tellurium [(Et 3 Si) 2 Te , ( TES ) 2 Te Synthesis
50 g (0.39 mol) of tellurium powder was added to a 2 L Schlenk flask, and 200 mL of THF was added thereto. After adjusting the bath temperature to -40 ° C, 783 mL (0.78 mol) of Super-hydride 1.0M in tetrahydrofuran (THF) was slowly added dropwise. After the addition was completed, the mixture was warmed to room temperature and stirred for 2 hours. After stirring was complete, the mixture was cooled to -40 ° C, and 124 g (0.82 mol) of triethylsilyl chloride was slowly added dropwise, followed by reflux for 4 hours. Thereafter, the mixture was stirred at room temperature for 24 hours, and the filtrate and the resulting salt were allowed to separate. The filtrate in the upper layer was separated separately, the solvent was removed and the residue was purified several times to synthesize 110 g of (TES) 2 Te as a liquid at room temperature in a yield of 79%. The synthesized (TES) 2 Te was analyzed using a 1H-NMR analyzer.
1 H-NMR (Benzene-d 6 ): δ 0.99-1.03 (t, 3H, SiCH 2 -C H 3 ), 0.80-0.86 (q, 2H, Si-C H 2 -CH 3 )
Manufacturing example 2 : Tris (dimethyl amido) antimony [(Me 2 N) 3 Sb Synthesis
390 g (1.45 mol) of 2.55 M n-BuLi (n-Butyllithium) was added to a 2 L Schlenk flask, and 500 mL of hexane was added thereto. After adjusting the bath temperature to -40 ° C, 65 g (1.45 mol) of dimethylamine was bubbled. After the addition was completed, the mixture was warmed to room temperature and stirred for 2 hours. After stirring was complete, 100 g (0.44 mol) of SbCl 3 dissolved in a small amount of THF was cooled again to −40 ° C., and the mixture was refluxed for 4 hours. After stirring at room temperature for 24 hours, the filtrate and the resulting salt were allowed to separate. The filtrate in the upper layer was separated separately, the solvent was removed and the residue was purified several times to synthesize 88 g of (Me 2 N) 3 Sb at room temperature in a yield of 80%. Synthesized (Me 2 N) 3 Sb was analyzed using a 1 H-NMR analysis equipment.
1 H-NMR (Benzene-d 6 ): δ 2.75 (s, 6H, N- (C H 3 ) 2 )
Manufacturing example 3: Tetrakis (dimethylamido) germanium [(Me 2 N) 4 Ge Synthesis
530 g (1.96 mol) of 2.55 M n-BuLi (n-Butyllithium) was added to a 2 L Schlenk flask, and 500 mL of hexane was added thereto. After adjusting the bath temperature to -40 ° C, 88 g (1.96 mol) of dimethylamine was bubbled. After the addition was completed, the mixture was warmed to room temperature and stirred for 2 hours. After stirring was complete, 100 g (0.46 mol) of GeCl 4 , which was again cooled to −40 ° C. and dissolved in a small amount of THF, was slowly added dropwise, followed by reflux for 4 hours. After stirring at room temperature for 24 hours, the filtrate and the resulting salt was allowed to separate. The filtrate in the upper layer was separated separately, the solvent was removed and the residue was purified several times to synthesize 70 g of (Me 2 N) 4 Ge in a yield of 60%. The synthesized (Me 2 N) 4 Ge was analyzed using a 1 H-NMR analysis equipment.
1 H-NMR (Benzene-d 6 ): δ 2.65 (s, 6H, N- (C H 3 ) 2 )
Example One : Alkyl silyl tellurium Alkyl amido antimony Antimony-Tel with Compound Rulium Substance synthesis
1 g of the liquid raw materials (TES) 2 Te and (Me 2 N) 3 Sb compound synthesized in the preparation example were added to a 10 mL glass container in a glove box, respectively. As the raw material was added, heat was generated, forming a black solid powder. In Fig. 1, the powder was analyzed by scanning electron microscopy (SEM) and the results of analysis using energy-dispersive X-ray spectroscopy (EDX). It was confirmed that the antimony-tellurium compound was formed.
Example 2 : Alkyl silyl tellurium Alkyl amidogerium Germanium-Tel with Compound Rulium Substance synthesis
1 g of the liquid raw materials (TES) 2 Te and (NMe 2 ) 4 Ge compound synthesized in the above Preparation Example were added to a 10 mL glass container in a glove box, respectively. As the raw material was added, heat was generated, forming a black solid powder. In FIG. 2, the powder was analyzed by scanning electron microscopy and the results of analysis using energy-dispersive X-ray spectroscopy (EDX). It can be seen that a germanium-tellurium compound was formed.
Claims (6)
[Formula 1]
[(R 1 R 2 R 3 ) Si] 2 Te
However, in Chemical Formula 1, R 1 , R 2 , and R 3 are each an alkyl group having 1 to 4 carbon atoms.
(2)
[(R 4 R 5 ) N] n M
In Formula 2, R 4 and R 5 each represent an alkyl group having 1 to 4 carbon atoms, n is an integer of 2 to 5, and M is a metal.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107118233A (en) * | 2017-06-26 | 2017-09-01 | 江苏南大光电材料股份有限公司 | Three（Dimethylamino）The synthetic method of antimony |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107118233A (en) * | 2017-06-26 | 2017-09-01 | 江苏南大光电材料股份有限公司 | Three（Dimethylamino）The synthetic method of antimony |
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