KR20120045930A - Apparatus amd method for treating substrate - Google Patents

Abstract

PURPOSE: A substrate processing apparatus and a method thereof are provided to deposit a film with a uniform thickness on a large substrate by controlling the density of plasma generated on an electrode region. CONSTITUTION: A substrate is arranged on a susceptor. The susceptor is located within a process chamber. A shower head(300) supplies gas to the substrate. A high frequency power source(410) is connected to a first side surface of the shower head through a high frequency line. A variable capacitor(530) is connected to a second side surface facing to the first side surface of the shower head through an electricity line. The high frequency power source is not supplied to the electricity line.

Description

Substrate processing apparatus and method {APPARATUS AMD METHOD FOR TREATING SUBSTRATE}

The present invention relates to a substrate processing apparatus and method, and more particularly, to an apparatus and method for processing a substrate using a plasma.

Amorphous silicon solar cells, microcrystalline solar cells, thin film polycrystalline solar cells, thin film semiconductor devices, optical sensors, A deposition process for forming a thin film on a substrate is required to manufacture various electronic devices such as a semiconductor protective film and a display device. In order to perform the deposition process, a plasma chemical vapor deposition apparatus is used.

Conventional plasma chemical vapor deposition apparatus generates plasma by capacitively coupled plasma discharge. In the processing chamber of the deposition apparatus, two flat plate electrodes are spaced apart at predetermined intervals. One of the two electrodes serves as a susceptor on which the substrate is grounded and placed. The other electrode is positioned facing the susceptor and is connected to a high frequency power source.

In order to increase productivity and reduce costs in the deposition process, it is important to increase the deposition rate of the thin film. Recently, very high frequency (VHF) of 30 to 300 megahertz (MHz) is applied to the electrode to improve the deposition rate of the thin film. However, when a plasma process is performed using microwaves on a large substrate, such as a large area solar panel, deposition uniformity of each substrate of the substrate is greatly reduced.

The present invention provides a substrate processing apparatus and method capable of improving deposition uniformity and deposition rate.

The present invention also provides a substrate processing apparatus and method capable of performing a deposition process on a large substrate such as a large area solar panel.

The objects of the present invention are not limited to the above-mentioned objects, and other objects that are not mentioned will be clearly understood by those skilled in the art from the following description.

The present invention provides a substrate processing apparatus. The substrate processing apparatus includes a processing chamber; A susceptor located in the processing chamber and on which the substrate is placed; A shower head positioned in the processing chamber and supplying gas to the substrate; A high frequency power source connected to the first side of the shower head through a high frequency line; And a variable capacitor connected to the second side opposite the first side of the shower head via an electrical line, wherein the electrical line is not provided with a high frequency power source.

The shower head is provided as a single unit, a plurality of feed rods are provided on the first side of the shower head, and the high frequency line has high frequency branch lines respectively connected to the feed rods.

The feed rods are provided spaced apart from each other along the first side of the shower head. A plurality of connecting rods are provided on the second side of the shower head spaced apart from each other along the second side of the shower head, wherein the electrical line has electrical branch lines that are respectively connected with the plurality of connecting rods. The feed rods and the connection rods respectively correspond one-to-one and are disposed to face each other.

The substrate processing apparatus further includes a high frequency matcher provided to the high frequency line in a section between the high frequency power source and the branch lines. And a variable inductor provided in the electric line.

In the substrate processing apparatus according to another embodiment, a plurality of shower heads may be provided spaced apart from each other at the same height, and a single feed rod may be provided on each of the first sides of the shower heads, and a single portion may be provided on the second side of the shower heads. Are each provided with connection rods, wherein the high frequency line has high frequency branch lines respectively connected with the feed rods, and the electric line has branch electric lines respectively connected with the connection rods. The feed rods and the connection rods are disposed to face each other in a one-to-one correspondence.

The substrate processing apparatus further includes an insulating member located between the adjacent shower heads and electrically insulating the shower heads. The apparatus further includes a variable inductor provided in the electric line.

An interval between an upper surface of the susceptor and a bottom surface of the shower head is 10 mm or more and 20 mm or less.

The present invention also provides a substrate processing method. The substrate processing method applies high frequency power to the shower head through a feed rod connected to the first side of the shower head, adjusts the size of the variable capacitor connected to the second side opposite to the first side of the shower head, While the plasma is supplied from the head to the substrate, while the plasma is supplied to the substrate, the capacity of the variable capacitor is maintained at the first size during the first processing time, and the second size is different from the first size during the second processing time. Is maintained.

While the capacity of the variable capacitor is maintained at the first size, the first area of the shower head has a higher plasma density than the second area of the shower head, and while the second area of the shower head is maintained at the second size, One area has a lower plasma density than the second area of the shower head. The first process time and the second process time are different from each other. The first region is adjacent to the first side of the shower head and the second region is adjacent to the second side of the shower head. The capacitance of the variable capacitor is alternately repeated with the first size and the second size.

The feeding rods are provided in plural and spaced apart from each other along the first side of the shower head, and the high frequency power is simultaneously applied to the feeding rods.

The high frequency power is 30 MHz or more and 60 MHz or less. While the plasma is supplied to the substrate, the pressure inside the processing chamber in which the shower head is located is 1 Torr or more and 10 Torr or less.

The high frequency power supply is not provided to the electric line in which the variable capacitor is installed and connected to the second side of the shower head. The shower head is provided as a single unit, and a plurality of feed rods are provided to apply the high frequency power at points spaced apart from each other along the first side of the shower head.

In another aspect, a substrate processing apparatus includes a processing chamber; A susceptor located in the processing chamber and on which the substrate is placed; A shower head positioned in the processing chamber and supplying gas to the substrate; A high frequency power source connected to the first side of the shower head through a high frequency line; A high frequency matcher installed in the high frequency line in a section between the high frequency power source and the shower head; And at least one of a variable capacitor and a variable inductor provided in an electric line connected to the second side opposite to the first side of the shower head, wherein the high frequency power is not provided to the electric line.

The shower head is provided as a single unit, and a plurality of feed rods are provided to be spaced apart from each other along the first side of the shower head, and the high frequency line has high frequency branch lines connected to the feed rods, respectively.

According to the present invention, a film can be deposited to a uniform thickness over the entire region of the substrate.

In addition, according to the present invention, since the density of plasma generated according to the region of the electrode can be controlled, a film can be deposited with a uniform thickness on a large substrate such as a large area solar panel or the like.

1 is a plan view of a substrate processing apparatus of the present invention.
2 is a perspective view of the substrate processing apparatus of FIG. 1.
3 is a cross-sectional view schematically illustrating an internal configuration of the substrate processing apparatus of FIG. 1.
4 is a perspective view showing a shower head according to an embodiment of the present invention.
5 is a graph showing the density of plasma generated according to the frequency of applied power.
6 is a graph showing the plasma density generated according to the capacitance of the variable capacitor.
7 is a plan view of a substrate processing apparatus according to another embodiment of the present invention.
8 is a cross-sectional view schematically illustrating an internal configuration of the substrate processing apparatus of FIG. 7.
FIG. 9 is a perspective view illustrating the shower head of FIG. 8. FIG.

The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be interpreted as being limited by the embodiments described below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Therefore, the shape and the like of the components in the drawings are exaggerated to emphasize a more clear description.

1 is a plan view of a substrate processing apparatus of the present invention, FIG. 2 is a perspective view of the substrate processing apparatus of FIG. 1, and FIG. 3 is a cross-sectional view schematically illustrating an internal configuration of the substrate processing apparatus of FIG. 1.

1 to 3, the substrate processing apparatus 1 performs a deposition process on a substrate S. Referring to FIG. The substrate processing apparatus 1 includes a processing chamber 100, a susceptor 200, a shower head 300, a power supply unit 400, a phase variable member 500, and a gas distribution member 600.

The process chamber 100 provides a space in which a deposition process is performed. The process chamber 100 has a body 110 and a cover 120. The body 110 has an inner space 111 of which the upper surface is open, and the cover 120 covers the open upper surface of the body 110 to seal the inside of the body 111 from the outside. An opening for carrying in / out of the substrate S is formed at one side wall of the body 110, and the opening is opened and closed by the slot valve 130. The slot valve 130 opens an opening when the substrate S is carried into the process chamber 100 and when the substrate S is taken out of the process chamber 100. The slot valve 130 closes the opening while the substrate processing process is performed in the processing chamber 100. Exhaust holes 112 are formed in the bottom surface of the body 110, and the exhaust holes 112 are connected to the exhaust member 140. The exhaust member 140 maintains the pressure in the process chamber 100 at a process pressure during the process and exhausts reaction by-products generated in the process to the outside of the process chamber 100. The exhaust member 140 may be provided as an exhaust pump 141 and an exhaust line 142 connecting the exhaust hole 112 and the exhaust pump 141.

The susceptor 200 is positioned inside the processing chamber 100 and supports the substrate S. The substrate S provided to the plasma process treatment may be a solar panel. In addition, the substrate S is a large-area substrate, and the length of each of the horizontal and vertical lengths may be provided in a size exceeding 1 meter (m). For example, the substrate S may be provided in a size of 5 generations (1,100 × 1,300 mm) or more. The upper surface 210 of the susceptor 200 has a generally rectangular shape and is provided with a larger area than the substrate S. The susceptor 200 may be elevated to change the height of the upper surface 210. According to an embodiment, the susceptor 200 may be raised when loading / unloading the substrate S, and thus the upper surface of the susceptor 200 may be positioned higher than the position at the time of performing the process of the substrate S. FIG. The susceptor 200 is provided as one of two electrodes facing each other to generate plasma. The susceptor 200 may be grounded. Lift holes (not shown) may be formed in the susceptor 200 through upper and lower surfaces of the susceptor 200. Lift holes are provided with lift pins (not shown), which lift pins are lifted along the lift holes to load / unload the substrate S on the susceptor 200. A heater (not shown) may be provided inside the susceptor 200. The heater heats the substrate S to maintain the temperature of the substrate S at a process temperature.

The shower head 300 is positioned above the susceptor 200. The shower head 300 is provided as the other of the two electrodes facing each other.

4 is a perspective view showing a shower head according to an embodiment of the present invention.

1 to 4, the shower head 300 is provided as a single block having a generally rectangular parallelepiped shape, and an inflow space 301 into which a process gas is introduced is formed therein. The top and bottom surfaces of the shower head 300 may correspond to the top surface of the susceptor or may be provided with a larger area. Supply holes 302 are formed on an upper surface of the shower head 300. The supply holes 302 are connected to the gas distribution member 600 and are provided as passages through which the process gas is supplied to the inflow space 301. The bottom surface of the shower head 300 is provided in parallel with the top surface of the susceptor 200 and maintains a predetermined distance from the top surface of the susceptor 200. According to an embodiment, the bottom surface of the shower head 300 is maintained at intervals of 10 mm to 20 mm from the top surface of the susceptor 200. In general, the discharge voltage required for plasma discharge is proportional to the process pressure inside the processing chamber 100 and the distance between the two electrodes. Therefore, as the process pressure increases, the magnitude of the discharge voltage for plasma generation also increases. However, there are practical limitations on increasing the magnitude of the discharge voltage. In consideration of such a practical limitation, the present invention maintains the distance between the susceptor 200 and the shower head 300 at 10 mm to 20 mm. Accordingly, even when the process pressure is increased, the gap between the two electrodes 200 and 300 is maintained at the minimum interval, so that the discharge voltage required for plasma discharge can be applied even under high process pressure conditions.

The bottom of the shower head 300 may be anodized on its surface to prevent arc generation by plasma. Injection holes 303 are formed at the bottom of the shower head 300. The injection holes 303 are spaced apart from each other and are uniformly formed on the bottom surface of the shower head 300, and supply the process gas supplied to the inflow space 301 to the substrate S.

The gas distribution plate 310 may be provided in the inflow space 301 of the shower head 300. The gas distribution plate 310 is spaced apart from the inner surface of the shower head 300 and is disposed in parallel with the bottom surface of the shower head 300. The gas distribution plate 310 may be provided as a single plate or a plurality of plates may be spaced apart from each other at the same height. The gas distribution plate 310 disperses the introduced gas such that the process gas introduced into the inflow space 301 is uniformly supplied to each region of the inflow space 301. The dispersed gas may be uniformly supplied to the substrate S through the respective injection holes 303. A plurality of through holes (not shown) may be formed in the gas distribution plate 310, and a process gas may flow directly from the top of the gas distribution plate 310 to the bottom through the through holes.

The power supply unit 400 is connected to the first side 300a of the shower head 300. The power supply unit 400 applies high frequency power to the shower head 300. The power supply unit 400 includes a high frequency power source 410, a power supply rod 420, a high frequency matcher 430, and a high frequency line 440. The high frequency power source 410 generates high frequency power. An RF power source may be used as the high frequency power source 410.

The feed rod 420 is connected to the first side surface 300a of the shower head 300. The feed rod 420 is provided as a rod-shaped conductor and is electrically connected to the shower head 300. According to the embodiment, a plurality of feeding rods 420 are provided spaced apart from each other along the first side surface 300a of the shower head 300, and are arranged in a line at the same height. Each of the feed rods 420a to 420d applies high frequency power to the first side 300a of the shower head 300. Since the feed rods 420a to 420d apply high frequency power at uniform intervals along the longitudinal direction of the first side surface 300a of the shower head 300, high frequency power may be uniformly applied to the entire area of the shower head 300. Can be.

The high frequency line 440 electrically connects the high frequency power source 410 and the feeding rods 420a to 420d. According to an embodiment, the high frequency line 440 has a high frequency main line 441 and a high frequency separation line 442. The high frequency main line 441 is provided with a high frequency power source 410 to apply high frequency power. Each of the high frequency branch lines 442a to 442d is connected to the branch end of the high frequency main line 441, and the other end thereof is connected to the feed rods 420a to 420d, respectively. The high frequency branch lines 442a to 442d are connected to the feed rods 420a to 420d in a one-to-one correspondence. Thereby, high frequency power can be applied to each of the feed rods 420a to 420d simultaneously. The high frequency matcher 430 is installed in the high frequency main line 441 to minimize power loss of the high frequency power.

The phase variable member 500 is connected to the second side surface 300b of the shower head 300. The second side surface 300b of the shower head 300 is a surface facing the first side surface 300a. The phase variable member 500 includes a connection rod 510, an electric line 520, a variable capacitor 530, and an inductor 540.

The connecting rod 510 is connected to the second side surface 300b of the shower head 300. The connecting rod 510 is provided as a rod-shaped conductor and is electrically connected to the shower head 300. According to the embodiment, a plurality of connection rods 510 are provided along the second side surface 300b of the shower head 300 and spaced apart from each other, and are arranged in a line at the same height. Each of the connection rods 510a to 510d is disposed to face each other in a one-to-one correspondence with the feed rods 420a to 420d. High frequency power applied to the shower head 300 is transmitted to each of the connection rods 510a to 510d. The connecting rods 510a-510d are connected with the electric line 520. Electrical line 520 has a main electrical line 521 and a plurality of branch electrical lines 522. The main electrical line 521 is provided with a variable capacitor 530 and an inductor 540, the ends of which are grounded. The branch electric lines 522a to 522d have one end connected to the connection rods 510a to 510d and the other end connected to the branch end of the main electric line 521. Branch electrical lines 522a through 522d are connected in one-to-one correspondence with connection rods 510a through 510d. The variable capacitor 530 may adjust the capacity of the voltage and the charge that can be stored by adjusting the gap between the pair of opposing electrode plates. The inductor 540 may be provided with a fixed inductor or a variable inductor.

The gas supply member 600 supplies the process gas to the inflow space 301 of the shower head 300. The gas distribution member 600 has a housing 610, an inlet port 620, and a connecting pipe 630. The housing 610 is provided in a thin plate shape, and a space 611 is formed therein. The housing 610 is positioned above the shower head 300 and is disposed in parallel with the shower head 300. An inlet port 620 is connected to the upper surface of the housing 610. The inlet port 620 is provided in a tubular shape and is connected to the housing 610 through the cover 120 of the processing chamber 100. Process gas enters the interior space 620 of the housing 610 through the inlet port 620. The connection pipes 630 are positioned between the housing 610 and the shower head 300, and connect the inner space 611 of the housing 610 and the inflow space 301 of the shower head 300. The plurality of connection pipes 630 are provided spaced apart from each other. According to an embodiment, the connectors 630 may be arranged in a grid shape having a plurality of rows and columns when viewed from the top. By the above-described structure, the process gas stored outside the processing chamber 100 is supplied to the internal space 611 of the housing 610 through the inlet port 620, and temporarily in the internal space 611 of the housing 610. After the stay, it is supplied to the inlet space 301 of the shower head 300 through the connecting pipes (630).

A process of performing a deposition process on a substrate using the substrate processing apparatus having the above-described configuration will be described below.

When the substrate S is loaded on the upper surface 210 of the susceptor 200, the inside of the processing chamber 100 is sealed to the outside. The top surface of the susceptor 200 and the bottom surface of the shower head 300 are maintained at intervals of 10 mm to 20 mm. The exhaust member 140 exhausts the air in the processing chamber 100 to the outside to reduce the pressure inside the processing chamber 100. According to the embodiment, the pressure inside the processing chamber 100 is maintained at 1 Torr or more and 10 Torr or less by the depressurization of the exhaust member 140. This is relatively high pressure compared to the pressure inside the process chamber 100 is generally less than 1 Torr in the plasma deposition process. When the pressure inside the processing chamber 100 is maintained at less than 1 Torr, the average free path of the generated plasma ions is long, and damage due to ion collision is generated in the thin film. However, when the pressure inside the processing chamber 100 is maintained at 1 Torr or more, the average free path of plasma ions may be shortened, thereby preventing damage caused by ion collision. This improves the quality of the deposited thin film.

When the pressure inside the processing chamber 100 is maintained at the pressure, the process gas is supplied from the gas supply member 600 to the inflow space 301 of the shower head 300. Process gas in the inlet space 301 of the shower head 300 is supplied to the space between the susceptor 200 and the shower head 300 through the injection holes 303.

While the process gas is supplied, high frequency power is applied to the shower head 300. The high frequency power is applied to the shower head 300 through the feed rod 420 connected to the first side 300a of the shower head 300. According to the embodiment, the applied high frequency power maintains a frequency of 30 MHz or more and 60 MHz or less. Process gas remaining in the space between the susceptor 200 and the shower head 300 by the applied high frequency power is dissociated into a plasma state.

5 is a graph showing the density of plasma generated according to the frequency of applied power.

Referring to FIG. 5, the applied high frequency power A may generate a plasma having a higher density as a whole than the low frequency power B. FIG. However, the plasma generated by the high frequency power A has a problem that the density difference is large depending on the region of the electrode. This density difference makes the thickness of the thin film deposited on the substrate uneven.

The present invention adjusts the capacitance of the variable capacitor connected to the second side of the shower head in order to solve the density difference of the plasma generated by the application of high frequency power. As the capacitance of the variable capacitor changes, a region where a relatively high density plasma is generated may change.

6 is a graph showing the plasma density generated according to the capacitance of the variable capacitor.

3 and 6, the position of the region of high density of plasma generated by shifting the frequency phase according to the capacitance of the variable capacitor 530 is shifted. According to the embodiment, when the capacitance of the variable capacitor 530 is maintained at the first size A, the first region X1 of the shower head 300 has a higher plasma density than the second region X2. . When the capacitance of the variable capacitor 530 is maintained at the second size B, the second region X2 of the shower head 300 is formed to have a higher plasma density than the first region X1. The first size A and the second size B are different from each other. The first area X1 of the shower head 300 is an area adjacent to the first side surface 300a of the shower head 300, and the second area X2 is formed on the second side surface 300b of the shower head 300. It is an adjacent area. The variable capacitor 530 is maintained at the first size A during the first process time when the plasma is supplied to the substrate S, and is maintained at the second size B during the second process time. As a result, during the first process time and the second process time, the plasma is generated at a uniform density (A + B) over the entire area of the shower head 300, and is uniform over the entire area of the substrate S. A thin film of thickness is deposited.

While the plasma is supplied to the substrate S, the capacitance of the capacitor 530 may be alternately repeated between the first size A and the second size B. FIG. In addition, the first process time may be shorter or longer than the second process time. Such a change in the process conditions may allow the user to vary the process conditions in consideration of the position where the plasma of relatively high density is generated and the density difference of the generated plasma.

According to the embodiment, a plurality of feed rods 420 are provided spaced apart from each other along the longitudinal direction of the first side surface 300a of the shower head 300, the high frequency power is applied to each of the feed rods 420 at the same time . Since a plurality of high frequency powers are simultaneously applied to the shower head 300 at a predetermined distance, the plasma may be generated with a uniform density along the longitudinal direction of the first side 300a of the shower head 300.

7 is a plan view of a substrate processing apparatus according to another embodiment of the present invention, FIG. 8 is a cross-sectional view schematically illustrating an internal configuration of the substrate processing apparatus of FIG. 7, and FIG. 9 is a perspective view illustrating the shower head of FIG. 8.

7 to 9, unlike the above embodiment, a plurality of shower heads 300 are provided. The shower heads 300a to 300d are provided to be spaced apart from each other in the first direction 11 at the same height, and each of the shower heads 300a to 300d is disposed in parallel with the second direction 12 in the longitudinal direction thereof. The second direction 12 is a direction perpendicular to the first direction 11 when viewed from the top, and each of the shower heads 300a to 300d has a second direction rather than a width of a side surface parallel to the first direction 11. The width of the side surfaces parallel to 12 is provided relatively long. The direction perpendicular to the first direction 11 and the second direction 12 is called a third direction 13. The shower heads 300a to 300d each have the same size and shape. Each of the shower heads 300a to 300d has a bottom surface smaller than the top surface of the susceptor 200, and the plurality of shower heads 300a to 300d are combined with each other to form a bottom surface corresponding to the top surface of the susceptor 200. Form. Inflow spaces 301a to 301d are formed in the shower heads 300a to 300d, respectively, and spray holes 303a to 303d are uniformly spaced apart from each other at the bottom thereof. Connecting pipes 630 are connected to upper surfaces of the shower heads 300a to 300d, respectively, to supply process gas to the inflow spaces 301a to 301d.

Feed rods 420a to 420d are connected to first side surfaces A1 to A4 parallel to the first direction 11 of the shower heads 300a to 300d, respectively. Each shower head 300a to 300d is connected with a single feed rod 420a to 420d. The power supply rods 420a to 420d are connected to the high frequency power source 410 through the high frequency line 440, and apply high frequency power generated from the high frequency power source 401 to each shower head 300a to 300d. Single connection rods 510a to 510d are connected to the second side surfaces B1 to B4 parallel to the first side surfaces A1 to A4 of the shower heads 300a to 300d, respectively. The connection rods 510a-510d are connected with the variable capacitor 530 through the electric line 520. In each of the shower heads 300a to 300d, the power supply rods 420a to 420d and the connection rods 520a to 520d correspond one to one and are disposed to face each other.

Insulation members 330a through 330c are provided between adjacent shower heads 300a through 300d, respectively. The insulating members 330a to 330c are provided between the opposite sides of the adjacent shower heads 300a to 300d. The insulating members 330a to 330c are made of an insulating material, and electrically insulate adjacent shower heads 300a to 300d. When the high frequency powers are simultaneously applied to the single shower head 300 through the plurality of feed rods 420a to 420d, as shown in the shower head 300 shown in FIG. 1, the applied high frequency powers are connected to the connection rods 510a to. May be disturbed in the course of delivery to 510d). However, in this embodiment, a single feed rod 420a to 420d is connected to each shower head 300a to 300d, and insulating members 330a to 330c are provided between adjacent shower heads 300a to 300d. Since the shower heads 300a to 300d are electrically insulated from each other, the high frequency power applied to the shower heads 300a to 300d can be prevented from being disturbed with the high frequency power applied to the adjacent shower heads 300a to 300d.

The high frequency power applied to each of the shower heads 300a to 300d dissociates the process gas remaining between the shower heads 300a to 300d and the susceptor 200 to generate plasma. The density of the plasma generated varies depending on the area of the shower heads 300a to 300d in the second direction 12. According to the embodiment, when the capacitance of the variable capacitor 530 maintains the first size, the plasma density generated in the first region of the shower heads 300a to 300d is higher than the plasma density generated in the second region. When the capacitance of the variable capacitor 530 maintains the second size, the plasma density generated in the second regions of the shower heads 300a to 300d is higher than the plasma density generated in the first region. The variable capacitor 530 is maintained at the first size during the first process time and is maintained at the second size during the second process time. As a result, during the first process time and the second process time, the overall density of plasma generated in the first region and the second region of the shower heads 300a to 300d becomes uniform. In addition, high frequency power is simultaneously applied to the plurality of shower heads 300a to 300d disposed in the first direction 11 and applied to adjacent shower heads 300a to 300d by the insulating members 330a to 330c. Since the disturbance does not occur between the high frequency power, the plasma may be formed with a uniform density in the first direction 11 during the first process time and the second process time. As such, since the plasma is uniformly formed in the first direction 11 and the second direction 12 of the shower heads 330a to 330c during the first process time and the second process time, the thin film has a uniform thickness. Can be deposited on the substrate.

In the above embodiment, the density of the plasma formed by the change in the capacitance size of the variable capacitor is different according to the area of the shower head. In contrast, the density of the plasma depends on the area of the shower head due to the change in the capacity size of the variable inductor. It can be formed differently.

In addition, in the above embodiment, the variable capacitor and the variable inductor have been described as being installed together. Alternatively, any one of the variable capacitor and the variable inductor may be provided. In addition, the variable capacitor may be installed with a fixed inductor, and the variable inductor may be installed with a fixed capacitor.

The foregoing detailed description illustrates the present invention. Furthermore, the foregoing is intended to illustrate and describe the preferred embodiments of the invention, and the invention may be used in various other combinations, modifications and environments. That is, it is possible to make changes or modifications within the scope of the concept of the invention disclosed in this specification, within the scope of the disclosure, and / or within the skill and knowledge of the art. The described embodiments illustrate the best state for implementing the technical idea of the present invention, and various modifications required in the specific application field and use of the present invention are possible. Thus, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed as including other embodiments.

100: processing chamber 200: susceptor
300: shower head 400: power supply
410: high frequency power supply 420: power supply rod
430: high frequency matcher 440: high frequency line
500: phase variable member 510: connection rod
520: electric line 530: variable capacitor
540: inductor 600: gas distribution member

Claims (24)

Processing chamber;
A susceptor located in the processing chamber and on which the substrate is placed;
A shower head positioned in the processing chamber and supplying gas to the substrate;
A high frequency power source connected to the first side of the shower head through a high frequency line;
A variable capacitor connected to the second side opposite the first side of the shower head via an electrical line,
And the high frequency power supply is not provided to the electric line. The method of claim 1,
The shower head is provided as a single, a plurality of feed rods are provided on the first side of the shower head,
And the high frequency line has high frequency branch lines connected to the feed rods, respectively. The method of claim 2,
And the feed rods are spaced apart from each other along the first side of the shower head. The method of claim 2,
A plurality of connecting rods are provided on the second side of the shower head spaced apart from each other along the second side of the shower head,
And the electrical line has electrical branch lines, each connected with a plurality of connecting rods. The method of claim 4, wherein
The feed rods and the connection rods correspond to each other one-to-one, and are disposed to face each other. The method of claim 2,
And a high frequency matcher provided to the high frequency line in a section between the high frequency power source and the branch lines. The method of claim 4, wherein
And an inductor provided in said electric line. The method of claim 1,
The plurality of shower heads are provided spaced apart from each other at the same height,
The first side of the shower heads are each provided with a single feed rod, the second side of the shower heads are each provided with a single connection rod,
The high frequency line has high frequency branch lines respectively connected to the feed rods,
And the electrical line has branch electrical lines connected to the connection rods, respectively. The method of claim 8,
And the feed rods and the connection rods face each other in a one-to-one correspondence. The method of claim 8,
And an insulating member positioned between the adjacent shower heads and electrically insulating the shower heads. The method of claim 8,
And an inductor provided in said electric line. The method of claim 1,
Substrate processing apparatus, characterized in that the interval between the top surface of the susceptor and the bottom surface of the shower head is 10mm or more and 20mm or less. High frequency power is applied to the shower head through a feed rod connected to the first side of the shower head, and the size of the variable capacitor connected to the second side opposite to the first side of the shower head is adjusted to the substrate. To supply plasma,
While plasma is supplied to the substrate, the capacity of the variable capacitor is maintained at a first size during a first process time and is maintained at a second size different from the first size during a second process time. Way. The method of claim 13,
The capacity of the variable capacitor
While maintaining the first size, the first area of the shower head has a higher plasma density than the second area of the shower head,
While maintaining the second size, the first region of the shower head has a lower plasma density than the second region of the shower head. 15. The method of claim 14,
The first processing time and the second processing time is a substrate processing method, characterized in that the processing time is different from each other. 15. The method of claim 14,
And wherein the first region is adjacent to a first side of the shower head and the second region is adjacent to a second side of the shower head. 15. The method of claim 14,
And the capacitance of the variable capacitor is alternately repeated with the first and second sizes. 15. The method of claim 14,
The feeding rod is provided in plurality, spaced apart from each other along the first side of the shower head,
And said high frequency power is simultaneously applied to said feed rods. 15. The method of claim 14,
And said high frequency power is 30 MHz or more and 60 MHz or less. 15. The method of claim 14,
While the plasma is supplied to the substrate, the internal pressure of the processing chamber in which the shower head is located is 1 Torr or more and 10 Torr or less. The method of claim 13,
And the high frequency power supply is not provided to the electric line to which the variable capacitor is installed and connected to the second side of the shower head. The method of claim 13,
The shower head is provided as a single,
The feed rod is provided with a plurality of substrate processing method, characterized in that for applying the high frequency power at a point spaced from each other along the first side of the shower head. Processing chamber;
A susceptor located in the processing chamber and on which the substrate is placed;
A shower head positioned in the processing chamber and supplying gas to the substrate;
A high frequency power source connected to the first side of the shower head through a high frequency line;
A high frequency matcher installed in the high frequency line in a section between the high frequency power source and the shower head;
At least one of a variable capacitor and a variable inductor provided in an electric line connected to a second side opposite to the first side of the shower head,
And the high frequency power supply is not provided to the electric line. The method of claim 23,
The shower head is provided in a single,
A plurality of feed rods are provided and spaced apart from each other along the first side of the shower head,
And the high frequency line has high frequency branch lines connected to the feed rods, respectively.

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