KR20120042330A - Video apparatus using a switching elenent and method of babrcating the same - Google Patents

Abstract

PURPOSE: An image device using a switching device and a manufacturing method thereof are provided to connect a data line overlapped with a gate line by a connection unit of another layer, thereby reducing parasitic capacitance between the gate line and the data line. CONSTITUTION: A pixel electrode is formed in a pixel(130). A switching device(140) is switched by a signal applied from a gate line(120). The switching device transmits a charged generated by the pixel electrode to a data line(110). A connection unit(150) connects a disconnected data line in an overlapped portion between the data line and the gate line.

Description

VIDEO APPARATUS USING A SWITCHING ELENENT AND METHOD OF BABRCATING THE SAME

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an imaging apparatus using a switching element and a method of manufacturing the same, and more particularly, to an imaging apparatus driven by a switching element such as a digital x-ray detector or a display and a manufacturing method thereof.

The image device refers to a device for displaying an image to the outside using an electrical input signal or a device for converting a detection signal detected from the outside into an electrical signal and displaying the image through an external circuit. There are displays such as liquid crystal display devices, organic electro-luminescence display devices, plasma display panels, field emission display devices, and the like. An example is a digital x-ray detector.

First, the digital X-ray detector will be briefly described as follows.

In other words, the X-ray inspection apparatus for diagnosis, which is widely used in medicine in the past, has to take a predetermined film printing time in order to photograph using an X-ray detection film and to know the result, but in recent years, the development of semiconductor technology Thanks to this, a digital X-ray detector (DXD) using a thin film transistor (TFT) has been researched and developed.

Digital X-ray detectors have the advantage of using thin-film transistors as switching elements to diagnose results in real time immediately after X-rays are taken.

1 is a schematic diagram illustrating the structure and operation of a conventional digital X-ray detector, in which a substrate 11 is formed at a lower portion thereof, and a thin film transistor (T), a storage capacitor (C), a pixel electrode (74), and a photoconductive film ( 18), protective film 15, high voltage electrode 16, high voltage direct current power source 17, and the like.

The photoconductive film 18 forms an electrical signal, ie, electron and hole pair 19, internally in proportion to an external signal intensity such as incident electric waves or magnetic waves. The photoconductive film 2 serves as a converter for converting external signals, in particular X-rays, into electrical signals. The electron-hole pair 19 formed by the X-ray light is applied to the pixel electrode 74 positioned below the photoconductive film 2 by the voltage Ev applied from the high voltage DC power supply to the high voltage electrode positioned on the photoconductive film. Collected in the form of a charge, and stored in the storage capacitor (C) formed with the externally grounded capacitor electrode. In this case, the charge stored in the storage capacitor C is turned on by the gate signal applied to the gate of the thin film transistor T, so that an external image is transmitted through the data line connected to the thin film transistor T. It is sent to a processing circuit to produce an x-ray image.

2 is a plan view showing one pixel of a conventional digital X-ray detector, in which a gate line 51 constituting a gate pad electrode is arranged in a row direction at one end thereof, and a data line constituting a data pad electrode at one end thereof. 52 are arranged in the column direction crossing the gate line 51.

The gate pad electrode (not shown) is connected to the gate line 51 through a gate connection line (not shown), and the data pad electrode (not shown) is connected to the data line 52 through a data connection line (not shown). do.

The thin film transistor T is formed as a switching element at a portion where the gate line 51 and the data line 52 cross each other.

An area defined by the intersection of the data line 52 and the gate line 51 is called a pixel P to which X-ray light is incident, and the pixel P includes a capacitor electrode 68 and a pixel electrode 74. .

The ground line 54 is formed to be spaced apart from the gate line 51 by a predetermined distance, and the ground line 54 is formed under the capacitor electrode 68. The ground wiring 54 and the capacitor electrode 68 are electrically connected to each other through the ground wiring contact holes 60a and 60b.

One end of the ground line 54 is provided with a ground pad electrode (not shown) for applying a ground signal from the outside, and the ground line 54 and the ground pad electrode are connected through a ground connection line (not shown).

Between the capacitor electrode 68 and the pixel electrode 74, a silicon nitride film SiNX (protective film) is inserted into a dielectric material to form a storage capacitor C as a charge storage means.

In the above-described configuration, the pixel electrode 74 serves as a current collecting electrode that collects charges so that holes generated in the photoconductive film 18 can accumulate in the storage capacitor C. As shown in FIG.

In addition, holes stored in the storage capacitor C move to the source electrode through the drain electrode of the thin film transistor T, and are processed in an external circuit (not shown) via the data line 52 to be represented as an image. .

3 is a cross-sectional view taken along the line II ′ of FIG. 2.

A plan view of one pixel of the conventional digital x-ray detector is as shown in FIG. 2, and when the pixel area shown in FIG. 2 is cut along I-I ′, it is shown as in FIG. 3.

That is, the gate insulating layer GI is formed on the top of the gate electrode Gate formed on the substrate, and the active layer ACT and the data line 52 are sequentially formed on the top of the gate insulating layer GI.

A first passivation layer P1 is stacked on the top of the data line 52, a photo acryl PA is stacked on the top of the first passivation layer as a second passivation layer, and a third passivation layer P2 is formed on the top of the PA. This is laminated.

Although not shown in the drawings, the capacitor electrode 68 is formed on the upper end of the PA, and the pixel electrode 74 is formed on the upper end of the third passivation layer.

Meanwhile, in the conventional configuration as described above, the data line 52 is made of the same metal in one layer formed on the top of the layer on which the gate line 51 and the gate electrode are formed. Are stacked. Therefore, a portion (overlap portion) overlapping the gate line occurs in the data line.

At this time, as shown in FIG. 3, parasitic capacitance exists in the overlapping portion of the data line and the gate line.

On the other hand, in the case of DXD which detects X-ray wavelength by converting it into an electric signal, there is a demand for a technology that increases the detection efficiency by minimizing the loss that can occur during signal transmission due to the large number of signal conversions. In order to reduce the parasitic capacitance of the overlap portion as described above for improving the detection efficiency, the area A of the overlap portion should be reduced as shown in Equation 1 below.

However, there is a fair limitation in reducing the line width of the data line in order to reduce the area of the data line.

That is, in the case of the conventional digital X-ray detector, signal loss and transmission delay are generated at the overlap part by the parasitic capacitance of the overlap part as described above, and a method of reducing the line width may be applied to prevent such loss. However, there is a problem that there is a limit in reducing the line width.

On the other hand, the signal loss and transmission delay problems generated at the overlapping portion of the data line and the gate line as described above are occurring not only in the digital X-ray detector but also in a display such as a liquid crystal display.

That is, the digital X-ray detector DXD, which is formed by using the thin film transistor T as a switching element, at a portion where the gate line 51 and the data line 52 intersect, a liquid crystal display device, an organic light emitting display device, In the same display (hereinafter, simply referred to as a "display"), overlapping portions of the data lines and the gate lines are generated as described above, and these overlapping portions cause signal loss and transmission delay problems.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problem, and among the data lines formed for forming a switching element, a data line overlapping a gate line is connected by using a connection part formed on a different layer from the data line. An object of the present invention is to provide an imaging apparatus using the device and a method of manufacturing the same.

According to an aspect of the present invention, there is provided an imaging apparatus using a switching device, including: a pixel electrode formed on a pixel defined by an intersection of a data line and a gate line; A switching element switched by a signal applied from the gate line to transfer charges generated by the pixel electrode to the data line; In an overlapping portion of the data line overlapping the gate line, the data line may include a connection portion for connecting the data line, which is cut off at the boundary of the gate line.

In addition, an image device using another switching device according to the present invention for achieving the above-described technical problem, the pixel electrode formed in a pixel defined by the intersection of the data line and the gate line; A switching element switched by a signal applied from the gate line to connect the pixel electrode and the data line; In an overlapping portion of the data line overlapping the gate line, the data line may include a connection portion for connecting the data line, which is cut off at the boundary of the gate line.

In addition, the method for manufacturing an image device using the switching device according to the present invention for achieving the above technical problem, the step of sequentially forming a gate line, a gate insulating film, a data line on the substrate to switch the switching device; Removing a data line formed in an overlapping portion overlapping the gate line among the data lines; Forming a passivation layer on the substrate from which the data line of the portion overlapping the gate line is removed; Forming two contact holes on the passivation layer so that the ends of the data line which are separated by the overlap portion are exposed; And forming a connection part on the passivation layer that electrically connects ends of the data line through the two contact holes.

According to the above solution, the present invention provides the following effects.

That is, according to the present invention, parasitic capacitance between the gate line and the data line is connected by connecting the data line overlapping the gate line among the data lines formed to form the switching element using a connection part formed on a layer different from the data line. By reducing this, the loss of the signal and the transmission delay can be prevented.

In addition, the present invention reduces the parasitic capacitance between the gate line and the data line, thereby providing an effect of reducing signal distortion through improved loss due to delay.

1 is a schematic view illustrating the construction and operation of a conventional digital x-ray detector.
2 is a plan view showing one pixel of a conventional digital x-ray detector.
3 is a cross-sectional view taken along the line II ′ of FIG. 2.
4 is a plan view illustrating one pixel of an imaging apparatus using a switching device according to the present invention;
FIG. 5 is a cross-sectional view taken along the line II-II ′ of FIG. 4.
6A to 6G are exemplary views for explaining a method of manufacturing an imaging apparatus using a switching device according to the present invention.
7 is an exemplary view showing a plane of a digital x-ray detector as a first embodiment of an imaging apparatus using a switching element according to the present invention.
8 is an exemplary view showing a plane of a vertical field type liquid crystal display device as a second embodiment of an imaging device using a switching element according to the present invention;
9 is an exemplary view showing a plane of a horizontal field type liquid crystal display device as a third embodiment of an imaging device using a switching element according to the present invention;

Hereinafter, with reference to the accompanying drawings will be described in detail an embodiment of the present invention.

4 is a plan view illustrating one pixel of the imaging apparatus using the switching device according to the present invention, and FIG. 5 is a cross-sectional view taken along the line II-II ′ of FIG. 4.

As shown in FIG. 4, an imaging apparatus using a switching device according to the present invention includes a data line 110, a gate line 120, a switching device 140, a pixel 130, and a connection unit 150. It is composed.

The pixel 130 is used for outputting or sensing an image. In the case of a digital X-ray detector, a charge generated by sensing X-rays is collected and transmitted to a data line through a switching element. In this case, the liquid crystal is driven by the data signal transmitted from the data line through the switching element. In order to perform the above function, the pixel, the pixel electrode, the capacitor electrode, the common electrode, the ground wiring, and the like may be formed in various forms, which is schematically illustrated in FIG. 4.

The data line 110 is a line for transmitting an electrical signal for image processing. In an image device such as a digital X-ray detector, the charge stored in the storage capacitor C is detected by X-ray detection, and a thin film transistor (switching element) is used. It transmits through T) and sends it to an external image processing circuit. In a display such as a liquid crystal display, it receives a data signal for displaying R, G, and B and transmits it to a thin film transistor as a switching element. To perform.

The gate line 120 transmits a scan signal to the gate electrode Gate of the thin film transistor T, which is a switching element. The gate line 120 is formed on a display such as a digital x-ray deductor or a liquid crystal display device and functions as a switching element. (T) is turned on or off by the scan signal transmitted from the gate line.

The switching element 140 is turned on or turned on by the scan signal transmitted from the gate line, and transmits the data signal transmitted from the data line to the pixel electrode formed on the pixel, or receives the charge generated from the pixel from the pixel electrode. As a function of transmitting to a data line, it may be formed of a thin film transistor (T) as described above. In other words, the thin film transistor, which operates as a switching element, may have a gate line connected to a gate, and a data line and a pixel electrode connected to a source and a drain. Here, the switching element 140 may be formed in various ways for each imaging device, which is roughly illustrated in FIG. 4.

The connection part 150 electrically connects the ends of the data line that are separated by the gate line at a portion where the data line 110 and the gate line 120 overlap (hereinafter, simply referred to as an “overlap portion”). It performs a function, and in particular, is formed on a layer different from the data line.

That is, in the general imaging apparatus, the data line is formed on the upper layer of the gate line with the gate insulating layer GI interposed therebetween. However, in the present invention, as illustrated in FIG. 5, the data line is formed at the overlap portion of the upper end of the gate line 120. The data line 110 is broken. In this case, the connection part 150 is formed on the passivation layer 170 formed on the upper layer of the data line, and is separated from each other through two contact holes 160 penetrating the passivation layer to expose the data line. It electrically connects two data line ends.

That is, the present invention is to improve the loss of the signal by reducing the parasitic capacitance of the data line, which is one of the parasitic capacitances in the imaging device, the ends of the data line that is cut off the border of the gate line in the overlap portion, By using a metal connection part formed on the passivation layer on the upper end of the data line, the parasitic capacitance between the data line (connection part) and the two metals (metal) of the gate line is reduced by using the thickness of the passivation layer 170 of the overlap part. It has the characteristic of being.

Accordingly, the present invention is characterized in that the distortion and loss of a signal can be reduced in a display such as a digital x-ray detector or a liquid crystal display.

6A to 6G are exemplary views illustrating a method of manufacturing an imaging apparatus using a switching device according to the present invention. In particular, cross-sectional views taken along the cutting line II-II 'of FIG. 4 at each step of the manufacturing method are shown. It is shown. Meanwhile, a method of manufacturing the imaging apparatus using the switching element according to the present invention using a digital X-ray detector among the imaging apparatus will be described below, but the same may be applied to a display such as a liquid crystal display.

First, as shown in FIG. 6A, a gate line is formed on the substrate 100. In this case, although not shown in the drawing, a gate electrode, a gate pad electrode, a data pad electrode, a ground pad electrode, etc. may be formed together with the gate line 120.

Next, as shown in FIG. 6B, an inorganic insulating material group including a silicon nitride film (SiNX) and a silicon oxide film (SiO ₂ ), or benzocyclobutene (BCB), is formed on the entire surface of the substrate on which the gate line is formed. The gate insulating film GI is formed to have a thickness of 100 kV to 3000 kV by depositing or applying one selected from the group of organic insulating materials composed of acryl resin or the like.

Next, as shown in FIG. 6C, after forming the active layer ACT on the gate insulating layer, the data line 110 is formed on the active layer and the gate insulating layer. In this case, an ohmic contact layer may be formed between the active layer and the data line.

Next, as illustrated in FIG. 6D, the data line overlapping the active layer or the gate line is removed using a mask.

Next, as shown in FIG. 6E, the first passivation layer 171, the second passivation layer 172, and the third passivation layer 173 are sequentially formed on the entire surface of the substrate on which the data line and the active layer are formed.

The first passivation layer 171 may be formed to have a thickness of 500 μm to 1300 μm by depositing a silicon insulating layer (silicon nitride (SiNx) or silicon oxide (SiO 2)) by a predetermined method. As described above, when the first protective film, which is a layer directly in contact with the active layer, is formed of a silicon insulating film, the interfacial characteristics between the active layer and the first protective film 171 are excellent, so that an area for trapping electrons is reduced, thus moving the electrons. The result is faster mobility. In addition, an increase in leakage current due to direct contact between the second passivation layer made of the organic insulating layer and the channel to be described below can be prevented.

The second passivation layer 172 is one selected from the group of transparent organic insulating materials including benzocyclobutene (BCB), acryl resin, and the like on the first passivation layer (eg, photo acryl: PA)) is formed by applying from 1 μm to 1.5 μm. Although not shown in the drawings, a capacitor electrode is formed on the upper end of the second protective film.

The third passivation layer 173 forms a third passivation layer 173 by depositing one selected from the group of organic insulating materials on the second passivation layer on which the capacitor electrode is formed.

Next, as shown in FIG. 6F, the first contact layer and the third passivation layer are etched using a mask to expose the two data lines 110a and 110b, which are separated by the overlap portion, thereby contacting the two contacts. Holes 160a and 160b are formed.

Finally, as shown in FIG. 6G, the connection part 150 is formed on the third passivation layer 173 to connect two disconnected data lines to each other. In this case, a pixel electrode is formed on the third passivation layer. Therefore, the connection part may be formed of a metal having the same material as the pixel electrode by using a mask for forming the pixel electrode.

Meanwhile, as described above, the drawings illustrated in FIGS. 6A to 6G illustrate the present invention using the manufacturing method of the digital X-ray detector as an example, and may be similarly applied to the manufacturing method of a display such as a liquid crystal display. In this case, at least one of the three passivation layers 171 to 173 as described above may be omitted in a display such as a liquid crystal display.

That is, in a display such as a liquid crystal display, after one passivation layer is formed on the top of the data line, a pixel electrode may be formed on the passivation layer. However, in the case of such a display, the connection part may be formed using the pixel electrode formed on the upper portion of the passivation layer.

7 is an exemplary view showing a plane of a digital x-ray detector as a first embodiment of an imaging apparatus using a switching element according to the present invention, and FIG. 8 is a vertical view as a second embodiment of an imaging apparatus using a switching element according to the present invention. 9 is an exemplary view showing a plane of an electric field type liquid crystal display device, and FIG. 9 is an exemplary view showing a plane of a horizontal field type liquid crystal display device as a third embodiment of an image device using a switching element according to the present invention.

As described with reference to FIGS. 4 through 6, the imaging apparatus using the switching element according to the present invention includes the data line 110, the gate line 120, the switching element 140, the pixel 130, and the connection unit 150. The connection part formed at the upper end of the data line with a protective film between the two ends of the data line, which is disconnected with the gate line interposed between the data line and the gate line overlapping, with a protective film interposed therebetween. It is characterized by connecting through.

That is, in the imaging apparatus using the switching element according to the present invention, as shown in FIG. 4, the pixel electrode inside the pixel 130 is driven by the switching element 140 formed by the data line and the gate line, thereby providing an image. Or to display an image by transferring charges induced to the pixel electrode to an external image processing circuit, based on the data line 110 and the gate line 120, and the structure of the pixel varies for each image device. Can be formed.

First, the image device shown in FIG. 7 as a first embodiment of the present invention shows a plane of a digital X-ray detector, and the gate pad electrode (not shown) is connected to the gate line 220 through a gate connection wiring (not shown). ), The data pad electrode (not shown) is connected to the data line 210 through a data connection wiring (not shown), and a thin film transistor (A) as a switching element at a portion where the gate line and the data line 210 cross each other. 240 is formed.

The region defined by the intersection of the data line 210 and the gate line 220 is referred to as a pixel 230 through which X-ray light is incident, and the capacitor electrode 268 and the pixel electrode 274 are formed in the pixel.

In addition, the ground line 254 is formed to be spaced apart from the gate line 220 by a predetermined distance, and the ground line is formed under the capacitor electrode, and is connected to the ground line 254 through the ground line contact holes 260a and 260b. The capacitor electrode 268 is electrically connected.

One end of the ground line 254 is provided with a ground pad electrode (not shown) for applying a ground signal from the outside, and the ground line 254 and the ground pad electrode are connected through a ground connection line (not shown).

Between the capacitor electrode 268 and the pixel electrode 274, a silicon nitride film (SiNX) is inserted into a dielectric material to form a storage capacitor (C) as a charge storage means.

On the other hand, in the digital X-ray detector configured as described above, the pixel electrode 274 serves as a current collecting electrode that collects charges so that holes generated in the photoconductive film (not shown) can accumulate in the storage capacitor C. The holes stored in the storage capacitor C move to the source electrode through the drain electrode of the thin film transistor 240 and are processed in an external circuit (not shown) via the data line 210 to be represented as an image. .

In this case, since the data line, which is disconnected with the gate line in the overlap portion overlapping with the gator line 220, is connected through the connection part 250 formed at the upper end of the data line with the protective film interposed therebetween, Since the charge transferred from the pixel through the thin film transistor 240 may be normally transferred to an external circuit, and the gate line 220 and the connection part 250 are spaced apart with three protective layers therebetween, the gate line and the data line. Parasitic capacitance generated in between can be reduced.

Next, the image device shown in FIG. 8 as a second embodiment of the present invention shows a plane of a vertical twisted nematic (TN) liquid crystal display device, and the gate line 320 and the data line 310 are divided into two. The thin film transistor 340 is formed as a switching element at the crossing portion, and the pixel electrode 374 for outputting an image by the thin film transistor is formed in the pixel 330.

That is, in the vertical electric field type liquid crystal display as shown in FIG. 8, a common electric field (not shown) formed on the upper substrate and a pixel electrode 374 formed on the lower substrate are disposed to face each other and are formed therebetween. By driving the liquid crystal to perform an image output function.

As shown in FIG. 8, a data line 310 and a gate line 320 for driving the thin film transistor 340, which is a switching element, are formed on the lower substrate of the vertical field type liquid crystal display. Since the data lines cut off by the gate lines in the overlapped portions where the gate lines overlap, are connected through the connecting portion 350 formed at the upper end of the data lines with the protective film interposed therebetween, the thin film transistor ( The data signal transmitted to the 340 may be normally transmitted to the pixel electrode 374, and the gate line 320 and the connection part 350 are spaced apart from each other with a passivation layer formed thicker than the gate insulating layer. Parasitic capacitance generated between data lines can be reduced.

Finally, the image device shown in FIG. 9 as a third embodiment of the present invention shows a plane of a horizontal electric field type liquid crystal display device, and a switching element is formed at a portion where the gate line 420 and the data line 410 cross each other. A thin film transistor 440 is formed, and a pixel electrode 474 and a common electrode 480 for outputting an image by the thin film transistor are formed in the pixel 430.

That is, in the horizontal field type liquid crystal display device illustrated in FIG. 9, an in-plane switch (IPS) mode is formed by a horizontal electric field between the pixel electrode 474 and the common electrode 491 arranged side by side on the lower substrate. Drives the liquid crystal of, and outputs the image.

As shown in FIG. 9, a data line 410 and a gate line 420 for driving the thin film transistor 440 as a switching element are formed on the lower substrate of the horizontal field type liquid crystal display. Since the data lines cut off by the gate lines in the overlapped portions where the gate lines overlap, the data lines are connected through the connecting portion 450 formed at the upper end of the data lines with the passivation layer interposed therebetween. The data signal transmitted to the pixel electrode 474 may be normally transmitted to the pixel electrode 474. The gate line 420 and the connection part 450 are spaced apart from each other with a passivation layer formed thicker than the gate insulating layer. Parasitic capacitance generated between data lines can be reduced.

Meanwhile, in the horizontal field type liquid crystal display, a common line 490 for applying a common voltage to the common electrode 491 is additionally formed in addition to the data line 410 and the gate line 420. 450 is preferably formed so as not to overlap the common line. That is, since the common line is generally formed on the same layer as the pixel electrode on the passivation layer, and the connection part is also formed on the same layer as the pixel electrode, the connection part and the common line may be shorted when the connection part and the common line overlap. The connection part and the common line are preferably formed so as not to overlap. Also, even if there is another passivation layer between the common line and the connecting portion, when the common line and the data line overlap, a parasitic capacitance similar to the parasitic capacitance formed between the data line and the gate line may be formed between the data line and the common line. Therefore, the common line and the connection portion are preferably formed so as not to overlap each other.

On the other hand, when comparing the parasitic capacitance between the data line and the gate line in the present invention and the conventional imaging device as described above is shown in Table 1 below.

Conventional
Video device Invention
(Top Metal use) Invention
(Top metal  + Process) Data line cap . ( fF ) 28.89 21.27 20.70 Cap . Reduction rate -26.35% -28.32%

That is, the present invention has the feature that the parasitic capacitance between the data line and the gate line can be minimized by connecting the data line cut off by the boundary of the gate line at the overlapping portion with a connecting metal as a connection portion. have.

Those skilled in the art to which the present invention pertains will understand that the present invention can be implemented in other specific forms without changing the technical spirit or essential features. Therefore, it is to be understood that the embodiments described above are exemplary in all respects and not restrictive. The scope of the present invention is shown by the following claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts should be construed as being included in the scope of the present invention. do.

110, 210, 310, 410: data line
120, 220, 320, 420: Gate line
140, 240, 340, 440: switching elements
130, 230, 330, 430 pixels
150, 250, 350, 450: connection

Claims (14)

A pixel electrode formed on a pixel defined by the intersection of the data line and the gate line;
A switching element switched by a signal applied from the gate line to transfer charges generated by the pixel electrode to the data line;
And an interconnection unit for connecting the data line, which is disconnected from the gate line, in an overlapping portion where the data line and the gate line overlap each other. The method of claim 1,
The data line,
And an image processing circuit for processing an image sensed by the pixel electrode by using the charge. The method of claim 1,
The connection part is formed on a passivation layer formed between the data line and the pixel electrode.
The protective film,
A first passivation layer formed on an upper end of the data line;
A second passivation layer formed between the capacitor electrode formed on the pixel and the first passivation layer; And
And a third passivation layer formed between the pixel electrode and the second passivation layer. The method of claim 3, wherein
The connecting portion
And switching ends of the disconnected data line through two contact holes through the first passivation layer, the second passivation layer, and the third passivation layer to expose the data line. Imaging device used. A pixel electrode formed on a pixel defined by the intersection of the data line and the gate line;
A switching element switched by a signal applied from the gate line to connect the pixel electrode and the data line;
And an interconnection unit for connecting the data line, which is disconnected from the gate line, in an overlapping portion where the data line and the gate line overlap each other. The method of claim 5, wherein
The connecting portion
And a passivation layer formed on an upper end of the data line. The method of claim 5, wherein
The connecting portion
And the ends of the disconnected data line are electrically connected to each other through two contact holes through the passivation layer formed on an upper end of the data line to expose the data line. The method of claim 5, wherein
The connecting portion
Imaging device using a switching element, characterized in that formed of the same material as the pixel electrode. The method of claim 5, wherein
The pixel electrode,
And a liquid crystal device according to a data signal transmitted from the data line. The method of claim 9,
Further comprising a common line for applying a common voltage to the liquid crystal,
And the connection part is formed on the same layer as the common line so as not to overlap with the common line. Sequentially forming a gate line, a gate insulating film, and a data line on the substrate to switch the switching element;
Removing a data line formed in an overlapping portion overlapping the gate line among the data lines;
Forming a passivation layer on the substrate from which the data line of the portion overlapping the gate line is removed;
Forming two contact holes on the passivation layer so that the ends of the data line which are separated by the overlap portion are exposed; And
And forming a connection part on the passivation layer that electrically connects the ends of the data line through the two contact holes. The method of claim 11,
Forming the connection portion,
And a pixel electrode connected to the data line by the switching element together with the connection part. The method of claim 12,
And the connection part is formed of the same material as the pixel electrode. The method of claim 11,
Forming the protective film,
Forming a first passivation layer on the data line;
Forming a capacitor electrode after forming a second passivation layer on the first passivation layer;
And forming a pixel electrode on the second passivation layer on which the capacitor electrode is formed.

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