KR20120038625A - Solar cell - Google Patents
Solar cell Download PDFInfo
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- KR20120038625A KR20120038625A KR1020100100172A KR20100100172A KR20120038625A KR 20120038625 A KR20120038625 A KR 20120038625A KR 1020100100172 A KR1020100100172 A KR 1020100100172A KR 20100100172 A KR20100100172 A KR 20100100172A KR 20120038625 A KR20120038625 A KR 20120038625A
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- Prior art keywords
- solar cell
- layer
- lens
- electrode
- light
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- 239000004065 semiconductor Substances 0.000 claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 25
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 6
- 239000000395 magnesium oxide Substances 0.000 claims description 6
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 6
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 6
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- -1 acryl Chemical group 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 239000004417 polycarbonate Substances 0.000 claims description 4
- 229920000515 polycarbonate Polymers 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims 1
- 239000000969 carrier Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000031700 light absorption Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000000149 argon plasma sintering Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
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- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
- 229910005555 GaZnO Inorganic materials 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 230000007613 environmental effect Effects 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
Description
The present invention relates to a solar cell, and in particular, to provide a solar cell that can maximize the efficiency of the solar cell.
Recently, as interest in environmental problems and energy depletion has increased, there is a growing interest in solar cells as an alternative energy with abundant energy resources, no problems with environmental pollution, and high energy efficiency.
Solar cells can be divided into solar cells that generate steam required to rotate turbines using solar heat and solar cells that convert sunlight into electrical energy using the properties of semiconductors.
Among them, researches on photovoltaic cells (hereinafter, referred to as solar cells) in which electrons of p-type semiconductors generated by absorbing light and holes of n-type semiconductors are converted into electrical energy are being actively conducted.
1 is a schematic diagram illustrating a concept of driving a general solar cell, and FIG. 2 is an enlarged view of a surface of a transparent electrode of a solar cell.
As shown in FIG. 1, the
When a light bulb is connected to the
As such, a light bulb electrically connected to the
On the other hand, such a
Here, the uneven shape of the
The uneven shape of the
In addition, some of the light incident into the solar cell is reflected by the back electrode and re-entered into the pn junction semiconductor layer. There is even more light to be emitted.
As a result, the efficiency of the
Therefore, there is a demand for manufacturing a solar cell having higher efficiency.
The present invention is to solve the above problems, it is an object to improve the efficiency of the solar cell.
In order to achieve the above object, the present invention provides an insulating substrate; A first electrode formed on one surface to which light of the insulating substrate is incident; A semiconductor layer formed on the first electrode; A second electrode formed on the semiconductor layer; A lens layer formed on the second electrode, a lens layer formed on one surface of the support layer, and protruding so that a plurality of pyramidal lenses are arranged adjacent to each other in the longitudinal and transverse directions of the support layer; It is formed on the other surface of the formed support layer to provide a neighboring solar cell.
In this case, the thickness of the support layer is 1.06 to 1.1 times the height of the pyramid-shaped lens, the end of the reflective pattern is the light refracted at the vertex of the pyramidal lens and the light refracted at the end of the pyramidal lens It is located at a position corresponding to the point where they meet each other.
The area of the reflective pattern is a height * (1.06 to 1.1) of the pyramidal lens, and includes a reflective pattern formed to correspond to an edge of the pyramidal lens.
Here, the reflective pattern is formed in the shape of a square at the corner of the pyramid-shaped lens or in the shape of a triangle in the corner of the pyramid-shaped lens, the reflection pattern is formed along the edge of the lens of the pyramid-shaped.
In addition, the reflective pattern is made of one selected from silver (Ag), aluminum (Al), silicon oxide (SiO 2), titanium oxide (TiO 2) or magnesium oxide (MgO), the lens layer is a transparent acrylic resin (acryl) resin Or a photosensitive material such as a photoresist.
The support layer is made of one of polymethylmethacrylate (PMMA) or polyethylene terephthalate (PET) and polycarbonate (PC), which are thermoplastic resins. The second electrode is made of a transparent conductive oxide.
The semiconductor layer may include an n-type semiconductor layer, a pure amorphous silicon layer, and a p-type semiconductor layer, and the first electrode may be formed of silver (Ag) or aluminum (Al).
At this time, the surface of the second electrode is uneven.
As described above, according to the present invention, by further forming a microlens layer having a lens layer and a reflective pattern on the second electrode, thereby improving the path of the light incident into the solar cell, thereby capturing light There is an effect that can be increased, there is an effect of improving the efficiency of the solar cell.
Further, the microlens layer of the present invention further forms a reflection pattern at an optimal position, whereby some of the light incident into the solar cell can be recycled to reflect the light reflected by the first electrode. There is an effect of further improving the amount of light.
1 is a schematic diagram illustrating a concept of driving a general solar cell.
Figure 2 is an enlarged view showing the surface of the transparent electrode of the solar cell.
3 is a cross-sectional view schematically showing the structure of a solar cell according to an embodiment of the present invention.
4A-4D are perspective and plan views schematically showing a microlens layer according to an embodiment of the present invention.
5A to 5B are enlarged cross-sectional views of the microlens layer.
6 is a schematic diagram schematically showing the principle that the light efficiency of the solar cell according to an embodiment of the present invention is improved.
Hereinafter, embodiments according to the present invention will be described in detail with reference to the drawings.
3 is a cross-sectional view schematically showing the structure of a solar cell according to an embodiment of the present invention.
As shown, the
In detail, the
The
At this time, electrons in the
In addition, a
The
In this case, the
Here, the texture processing process is a process of forming a convex convex-convex shape on the surface of the material, which may be performed by an etching process using a photolithography method, an anisotropic etching process using a chemical solution, or a groove forming process using mechanical scribing. Can be.
In addition, the
Therefore, in the
Thus, by increasing the light absorption of the
When the
The generated electromotive force causes a potential difference between the
At this time, the light incident on the
Here, the operation principle of the
As described above, the electrons in the
Accordingly, light having an energy greater than the band gap energy, which is an energy difference between a conduction band and a valence band of a material forming the
In the valence band, holes are generated where electrons escape.
The generated free electrons and holes are called excess carriers, and the excess carriers are diffused by concentration differences in the conduction band or the valence band.
In this case, the excess carriers, that is, electrons excited in the p-
At this time, the plurality of carriers are interrupted by the flow due to the energy barrier (energy barrier) due to the electric field, electrons that are a minority carrier of the p-
Therefore, a potential difference occurs in the
In this case, when the
4A through 4D are schematic perspective and plan views of a microlens layer according to an exemplary embodiment of the present invention.
As shown in FIG. 4A, the
Here, the
In this case, the plurality of pyramid-shaped
Due to the pyramid-shaped
That is, light such as sunlight is incident vertically into the solar cell (100 of FIG. 3). At this time, the light is refracted at a specific angle due to the pyramid-shaped
In addition, due to the pyramid-shaped
Accordingly, when light is incident more efficiently, total reflection can be prevented and light scattering can be expanded to increase light capture, thereby improving the efficiency of the solar cell (100 of FIG. 3).
In addition, the
That is, some of the light reflected by the
Therefore, the amount of light inside the
Here, the reflective pattern 232 is made of one of silver (Ag), aluminum (Al), silicon oxide (SiO 2), titanium oxide (TiO 2), or magnesium oxide (MgO).
As shown in FIGS. 4B to 4D, the
At this time, the
Here, referring to FIG. 5A, the position and area of the pyramid-shaped
In more detail, the light incident perpendicularly to the
In this case, Snell's law is n1sinθ1 = n2sinθ2 ..... (1)
Where n1 and n2 represent refractive indices, θ1 represents an incident angle, and θ2 represents a refractive angle.
That is, light incident on the
Using this, the refractive angle θ after passing through the
sinθ = n / n'sin (θa-sin -1 ((n '/ n) sinθa)) ..... Equation (2)
It may be represented as.
Through the above equation (2), the incident angle θa can be expressed by the following equation.
Θa = 90 °-θb / 2 ..... Equation (3)
Here, θb represents the inclination of the pyramid-shaped
At this time, whatever the angle of the pyramid-shaped
At this time, the
Therefore, the light reflected by the
Here, the
Accordingly, the
That is, the
At this time, the optimal position at which the
That is, in the
For example, when the refractive index of the
Accordingly, light refracted by the pyramid-shaped
L = (d + x) * tan18.05 ° .......... Equation (4)
It will reach within the range of.
At this time, the light refracted from the vertex of the pyramidal lens 221 (x = h) is
L1 = (d + h) * tan18.05 ° ........... Equation (5)
The light refracted at the end point of the pyramidal lens 221 (x = 0)
L2 = (d + 0) * tan18.05 ° ............ Equation (6)
It will reach within the range of.
At this time, L1 + L2 = h,
dtan18.05 ° + (d + h) tan18.05 ° = h ............. Equation (7)
Since equation (7) can be redefined as follows.
2dtan18.05 ° = (h h) tan18.05 ° = h (1-tan18.05 °)
∴ d = 2 tan18.05 ° / h (1- tan18.05 °)
= h (1- tan18.05 ° / 2 tan18.05 °) ............. Equation (8)
Equation (8) can be defined as follows again.
d = h * 1.03 ........... Equation (9)
That is, when the height h of the pyramid-shaped
At this time, since the area of the
As described above, the
In addition, due to the pyramid-shaped
Accordingly, when light is incident more efficiently, total reflection can be prevented and light scattering can be expanded to increase light capture, thereby improving the efficiency of the solar cell (100 of FIG. 3).
In addition, the
Therefore, the amount of light inside the
6 is a schematic view schematically showing a principle that the light efficiency of the solar cell according to the embodiment of the present invention is improved.
As shown, the
In addition, the light through the
This is to improve the light trapping ability of the
In addition, the
Table 1 below is a result of simulating the absorption rate of light such as sunlight into the
In Table 1 above, sample 1 is a simulation result of a general solar cell, and sample 2 is a simulation result of a solar cell including a transparent electrode whose surface is formed in an irregular shape through a texture processing process, and sample 3 is the present invention. Simulation results of a solar cell provided with a microlens layer according to an embodiment of the present invention.
Here, it can be seen that the light absorption of the semiconductor layer is improved by about 10% compared to the general solar cell through the texture processing process, but the absorption rate of the semiconductor layer of the solar cell according to the embodiment of the present invention is 165%, It can be seen that the absorption of light is improved by about 65% or more.
As described above, the
In addition, the
The present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention.
100: solar cell, 101: insulating substrate
110: first electrode
120: second electrode
130: semiconductor layer (130a: p-type semiconductor layer, 130b: n-type semiconductor layer, 130c: pure amorphous silicon layer)
200: microlens layer (210: support layer, 220: lens layer, 221: pyramidal lens, 230: reflection pattern)
Claims (14)
A first electrode formed on one surface to which light of the insulating substrate is incident;
A semiconductor layer formed on the first electrode;
A second electrode formed on the semiconductor layer;
A lens layer formed on the second electrode, a lens layer formed on one surface of the support layer, and protruding so that a plurality of pyramidal lenses are arranged adjacent to each other in the longitudinal and transverse directions of the support layer; Solar cells formed on the other surface of the support layer formed and neighboring.
The support layer has a thickness of 1.06 to 1.1 times the height of the pyramid-shaped lens.
One end of the reflective pattern is located at a position corresponding to the point where the light refracted at the vertex of the pyramid-shaped lens and the light refracted at the end of the pyramid-shaped lens meet each other.
The area of the reflective pattern is the height * (1.06 ~ 1.1) of the pyramidal lens.
Solar cell comprising a reflective pattern formed corresponding to the edge of the pyramid-shaped lens.
The reflective pattern is formed in a rectangular shape on the corner of the pyramid-shaped lens, or a solar cell formed in a triangular shape on the corner of the pyramid-shaped lens.
The reflective pattern is formed along the edge of the pyramidal lens.
The reflective pattern is a solar cell comprising one selected from silver (Ag), aluminum (Al), silicon oxide (SiO 2), titanium oxide (TiO 2) or magnesium oxide (MgO).
The lens layer is a solar cell comprising one selected from photosensitive materials such as transparent acrylic (acryl) resin or photoresist (photoresist).
The support layer is a solar cell consisting of one of polymethylmethacrylate (PMMA) or polyethylene terephthalate (PET) and polycarbonate (PC).
The second electrode is a solar cell made of a transparent conductive oxide (transparent conductive oxide).
The semiconductor layer is a solar cell consisting of an n-type semiconductor layer, a pure amorphous silicon layer and a p-type semiconductor layer.
The first electrode is a solar cell consisting of one selected from silver (Ag) or aluminum (Al).
The second electrode has a concave-convex surface.
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KR1020100100172A KR101661223B1 (en) | 2010-10-14 | 2010-10-14 | Solar cell |
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KR1020100100172A KR101661223B1 (en) | 2010-10-14 | 2010-10-14 | Solar cell |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101645534B1 (en) | 2016-03-29 | 2016-08-08 | (주) 비제이파워 | Solar cell module for outdoor having enhanced endurance |
KR101645532B1 (en) | 2016-03-29 | 2016-08-08 | (주) 비제이파워 | Solar cell module having an improved generation efficiency by stacking multilayer on surface |
KR101869510B1 (en) * | 2017-11-07 | 2018-06-21 | (주) 비제이파워 | The photovoltaic module of architecture exterior material type with enhanced esthetics |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003069067A (en) * | 2001-08-27 | 2003-03-07 | Sharp Corp | Thin film solar cell and light condensing/reflecting element |
JP2003110130A (en) * | 2001-09-28 | 2003-04-11 | Sharp Corp | Thin film solar battery |
KR20100109321A (en) * | 2009-03-31 | 2010-10-08 | 엘지이노텍 주식회사 | Solar cell and method of fabricating the same |
-
2010
- 2010-10-14 KR KR1020100100172A patent/KR101661223B1/en active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003069067A (en) * | 2001-08-27 | 2003-03-07 | Sharp Corp | Thin film solar cell and light condensing/reflecting element |
JP2003110130A (en) * | 2001-09-28 | 2003-04-11 | Sharp Corp | Thin film solar battery |
KR20100109321A (en) * | 2009-03-31 | 2010-10-08 | 엘지이노텍 주식회사 | Solar cell and method of fabricating the same |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101645534B1 (en) | 2016-03-29 | 2016-08-08 | (주) 비제이파워 | Solar cell module for outdoor having enhanced endurance |
KR101645532B1 (en) | 2016-03-29 | 2016-08-08 | (주) 비제이파워 | Solar cell module having an improved generation efficiency by stacking multilayer on surface |
KR101869510B1 (en) * | 2017-11-07 | 2018-06-21 | (주) 비제이파워 | The photovoltaic module of architecture exterior material type with enhanced esthetics |
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