KR20120029634A - Iridium plating solution and method of plating using the same - Google Patents

Iridium plating solution and method of plating using the same Download PDF

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KR20120029634A
KR20120029634A KR1020100091549A KR20100091549A KR20120029634A KR 20120029634 A KR20120029634 A KR 20120029634A KR 1020100091549 A KR1020100091549 A KR 1020100091549A KR 20100091549 A KR20100091549 A KR 20100091549A KR 20120029634 A KR20120029634 A KR 20120029634A
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iridium
plating
saturated
acid
plating solution
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마사히로 이토
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니혼 엘렉트로플레이팅 엔지니어스 가부시키가이샤
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/54Electroplating: Baths therefor from solutions of metals not provided for in groups C25D3/04 - C25D3/50

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Abstract

PURPOSE: An iridium plating solution and a plating method thereof are provided to effectively restrict cracks on an iridium-plated film because the plating solution contains one or more of Fe(Iron), Co(Cobalt), Ni(Nickel), and Cu(Copper). CONSTITUTION: An iridium plating solution uses an iridium compound which is made by mixing one or more kinds of compounds in iridium complex salt, wherein the compounds are selected from the group consisting of saturated mono carboxylic acid, saturated mono carboylate, saturated dicarboxylic acid, saturated dicarboylate, saturated hydroxyl carboxylic acid, saturated hydroxyl carboylate, amid, and urea.

Description

이리듐 도금액 및 그 도금 방법{IRIDIUM PLATING SOLUTION AND METHOD OF PLATING USING THE SAME}Iridium plating solution and its plating method {IRIDIUM PLATING SOLUTION AND METHOD OF PLATING USING THE SAME}

본 발명은, 이리듐 도금액 및 그 도금 방법에 관한 것이다.The present invention relates to an iridium plating solution and a plating method thereof.

이리듐은, 높은 경도를 가짐과 함께, 고농도의 산이나 왕수, 혹은 할로겐류에 대해서도 뛰어난 내부식성을 나타내는 금속이다. 그리고, 그 응용 범위는 장식품만이 아니라 소정의 금속의 경화제나 촉매, 또한, 방부식재 및 전기접점 등의 재료로서 공업적으로 널리 이용되고 있다.Iridium is a metal having high hardness and exhibiting excellent corrosion resistance against high concentrations of acids, aqua regia or halogens. And the application range is industrially widely used not only as a decoration but also as a hardening | curing agent of a predetermined metal, a catalyst, and a material, such as an anticorrosive material and an electrical contact.

이 이리듐을 이용하는 경우의 이리듐 도금액으로서는, 음이온 성분이 할로겐인 이리듐(Ⅲ) 착염에, 포화 모노카르복시산, 포화 모노카르복시산염, 포화 디카르복시산, 포화 디카르복시산염, 포화 히드록시카르복시산, 포화 히드록시카르복시산염, 아미드, 요소로 이루어지는 군에서 선택된 1종 이상의 화합물을 가하고 교반한 것을, 이리듐 화합물로서 사용하는 이리듐 도금액이 알려져 있다(특허문헌 1 참조).As the iridium plating solution in the case of using this iridium, a saturated monocarboxylic acid, a saturated monocarboxylic acid, a saturated dicarboxylic acid, a saturated dicarboxylic acid salt, a saturated hydroxycarboxylic acid, a saturated hydroxycarboxylic acid salt, to an iridium (III) complex salt whose anion component is halogen is used. The iridium plating liquid which uses what was added and stirred the 1 or more types of compound chosen from the group which consists of a amide | amido and an urea as an iridium compound is known (refer patent document 1).

이 이리듐 도금액은, 안정하여 분해하기 어렵고, 높은 전류 효율과 빠른 도금 속도를 갖는 실용적인 이리듐 도금액으로서 유효하게 이용되고 있다.This iridium plating liquid is stable and difficult to decompose, and is effectively used as a practical iridium plating liquid having high current efficiency and fast plating speed.

그러나, 이와 같은 뛰어난 이리듐 도금액에 있어서도, 그 도금 성상에 관해, 다음과 같은 지적이 되어 있다. 예를 들면, 리드핀과 같은 전기적 접속을 하기 위한 전자 부품에 사용하는 경우(특허문헌 2 참조), 이리듐 도금 피막에 크랙이 생겨, 전기적 특성을 충분하게 만족할 수 없는 현상이 생기는 경우가 있다. 이 리드핀과 같은 전자 부품에 있어서는, 통상, 하지(下地)의 로듐에 이리듐 도금 피복하는 것이 행해지고 있지만, 로듐과 같은 희소 금속의 가격 앙등에 수반하여, 하지의 로듐을 감소시켜, 이리듐 도금 피막을 두껍게 도금 처리하는 대응이 검토되어 있다. 이와 같이 이리듐 도금 피막을 두껍게 형성하는 경우, 종래의 이리듐 도금액에서는, 크랙의 발생이 특히 현저하게 되어, 전기적인 특성을 만족할 수 없는 경우가 생기고 있었다.However, also in such an excellent iridium plating liquid, the following point is made regarding the plating property. For example, when used in electronic components for electrical connection such as lead pins (see Patent Document 2), cracks may occur in the iridium plated coating, and a phenomenon may occur in which electrical characteristics cannot be sufficiently satisfied. In electronic components such as lead pins, iridium plating is usually applied to rhodium in the base, but rhodium in the base is reduced and the iridium plated coating is reduced with the price rise of a rare metal such as rhodium. Correspondence to thick plating is examined. As described above, when the iridium plating film is thickly formed, cracks are particularly remarkable in the conventional iridium plating solution, and electrical characteristics may not be satisfied.

일본 특개평6-316786호 공보Japanese Patent Laid-Open No. 6-316786 일본 특개평7-21867호 공보Japanese Patent Laid-Open No. 7-21867

본 발명은, 상기와 같은 사정 하에 이루어진 것으로, 크랙의 발생이 극력 억제된 이리듐 도금 피막을 용이하게 형성할 수 있는 이리듐 도금액 및 그 도금 방법을 제안하는 것을 목적으로 한다.This invention is made | formed under such circumstances, and an object of this invention is to propose the iridium plating liquid which can easily form the iridium plating film in which the generation | occurrence | production of the crack was suppressed the most, and its plating method.

본 발명은, 음이온 성분이 할로겐인 이리듐(Ⅲ) 착염에, 포화 모노카르복시산, 포화 모노카르복시산염, 포화 디카르복시산, 포화 디카르복시산염, 포화 히드록시카르복시산, 포화 히드록시카르복시산염, 아미드, 요소로 이루어지는 군에서 선택된 1종 이상의 화합물을 가하고 교반하여 얻어지는 이리듐 화합물을 사용하는 이리듐 도금액에 있어서, Fe, Co, Ni, Cu의 적어도 1종 이상을 함유하는 것을 특징으로 한다. Fe, Co, Ni, Cu의 적어도 어느 금속이 도금액 중에 존재함으로써, 이리듐 도금 피막에 있어서의 크랙의 발생이 효과적으로 억제된다.This invention consists of saturated monocarboxylic acid, saturated monocarboxylic acid, saturated dicarboxylic acid, saturated dicarboxylic acid, saturated hydroxycarboxylic acid, saturated hydroxy carboxylate, amide, and urea to the iridium (III) complex salt whose anion component is halogen. The iridium plating solution using the iridium compound obtained by adding and stirring one or more compounds selected from the group is characterized by containing at least one or more of Fe, Co, Ni, and Cu. Since at least any metal of Fe, Co, Ni, and Cu exists in a plating liquid, generation | occurrence | production of the crack in an iridium plating film is suppressed effectively.

본 발명의 이리듐 도금액은, Fe, Co, Ni, Cu의 적어도 1종 이상의 함유량은, 0.01g/L?10g/L인 것이 바람직하다. 0.01g/L 미만이면, 크랙이 발생하기 쉬워지고, 10g/L를 초과하면, 결정 성장이 불안정하게 된다.In the iridium plating solution of the present invention, the content of at least one or more of Fe, Co, Ni, and Cu is preferably 0.01 g / L to 10 g / L. If it is less than 0.01 g / L, a crack will be easy to generate, and if it exceeds 10 g / L, crystal growth will become unstable.

이 Fe, Co, Ni, Cu의 어느 금속은, 가용성 금속염으로서 도금액에 함유하는 것이 바람직하다.It is preferable that any of these Fe, Co, Ni and Cu metals are contained in the plating liquid as soluble metal salts.

본 발명에 있어서의 이리듐 도금액은, 이리듐이 금속 이리듐 농도로 1?200g/l 함유하는 것이 바람직하고, 보다 바람직하게는 10?20g/l이다. 이리듐 농도가 1g/l보다 적으면 전류 밀도의 상한이 작아져 실용에 제공하는 것이 어려워지고, 200g/l보다 많으면 포화하여 이리듐이 용해할 수 없어짐과 함께 비용이 고가가 되어 실용상 부적합하게 된다. 이리듐(Ⅲ) 착염으로서는, 헥사클로로이리듐(Ⅲ)산염, 헥사브로모이리듐(Ⅲ)산염, 헥사플루오로이리듐(Ⅲ)산염, 바람직하게는 헥사브로모이리듐(Ⅲ)산나트륨, 헥사클로로이리듐(Ⅲ)산나트륨 등을 채용할 수 있다.As for the iridium plating liquid in this invention, it is preferable that iridium contains 1-200 g / l in metal iridium concentration, More preferably, it is 10-20 g / l. When the iridium concentration is less than 1 g / l, the upper limit of the current density becomes smaller, making it difficult to provide practically. When the iridium concentration is more than 200 g / l, the iridium becomes saturated and the iridium cannot be dissolved. Examples of the iridium (III) complex salt include hexachloroiridium (III) acid salt, hexabromoiridium (III) acid salt, hexafluoroiridium (III) acid salt, preferably hexabromoiridium (III) acid salt and hexachloroiridium ( III) Sodium acid salt etc. can be employ | adopted.

또한, 포화 모노카르복시산, 포화 모노카르복시산염, 포화 디카르복시산, 포화 디카르복시산염, 포화 히드록시카르복시산, 포화 히드록시카르복시산염, 아미드, 요소로 이루어지는 군에서 선택된 1종 이상의 화합물은, 0.001?1.0mol/L 첨가하는 것이 바람직하고, 보다 바람직하게는 0.01?0.2mol/L 첨가하는 것이다. 그리고, 이 화합물로서는 예를 들면 아세트산, 말론산2나트륨, 옥살산 등을 채용할 수 있고, 바람직하게는 말론산2나트륨이다. 그리고, 그 첨가량을 0.001?1.0mol/L로 한 것은, 0.001mol/L보다 적으면 첨가에 의한 효과가 거의 나타나지 않기 때문이며, 1.0mol/L보다 많으면 석출을 막기 때문이다.In addition, the at least one compound selected from the group consisting of saturated monocarboxylic acid, saturated monocarboxylic acid salt, saturated dicarboxylic acid, saturated dicarboxylic acid salt, saturated hydroxycarboxylic acid, saturated hydroxycarboxylic acid salt, amide and urea is 0.001 to 1.0 mol / It is preferable to add L, More preferably, it is 0.01-0.2 mol / L addition. As the compound, for example, acetic acid, disodium malonate, oxalic acid, and the like can be employed, and preferably sodium malonate. And the addition amount was made into 0.001-1.0 mol / L because the effect by addition hardly appears when it is less than 0.001 mol / L, and when it exceeds 1.0 mol / L, precipitation is prevented.

본 발명에 따른 이리듐 도금액은, 필요에 따라, pH 조정을 위한 완충제, 예를 들면, 붕산, 설팜산 등을 함유할 수 있다.The iridium plating solution according to the present invention may contain a buffer for adjusting pH, for example, boric acid, sulfamic acid, and the like, as necessary.

본 발명에 따른 이리듐 도금 방법은, 조건을 pH 1?8, 온도 50?98℃, 전류 밀도 0.01?3.0A/dm2로 하고, 바람직하게는 pH 4?6, 온도 80?90℃, 전류 밀도 0.1?0.8A/dm2의 조작 조건으로 사용한다. pH 1?8로 한 것은, pH가 1보다 작으면 전류 밀도의 상한이 작아져 실용적이지 않게 되기 때문이며, pH가 8보다 크면 수산화물을 생성하여 침전이 생기기 때문이다. 그리고 온도가 50℃보다 낮으면 극단적으로 석출이 일어나기 어려워지고, 온도가 98℃보다 높으면 물의 증발이 격렬하게 되어 실용상 바람직하지 않게 된다. 그리고 또한, 전류 밀도가 0.01A/dm2보다 낮은 경우는 석출 속도가 극단적으로 작아지고, 3.0A/dm2보다 높은 전류 밀도의 경우는 수소의 발생이 일어나, 석출물이 석출하지 않게 된다.In the iridium plating method according to the present invention, the conditions are pH 1-8, temperature 50-98 ° C, current density 0.01-3.0 A / dm 2 , preferably pH 4-6, temperature 80-90 ° C, current density. It is used under the operating conditions of 0.1 ~ 0.8A / dm 2 . The pH of 1 to 8 is because when the pH is less than 1, the upper limit of the current density becomes smaller and becomes impractical. When the pH is higher than 8, hydroxides are generated and precipitation occurs. If the temperature is lower than 50 ° C, precipitation becomes extremely difficult to occur, and if the temperature is higher than 98 ° C, evaporation of water becomes violent, which is not practically desirable. In addition, when the current density is lower than 0.01 A / dm 2 , the precipitation rate is extremely small, and when the current density is higher than 3.0 A / dm 2 , hydrogen is generated and the precipitates do not precipitate.

본 발명에 의하면, 크랙의 발생이 극력 억제된 이리듐 도금 피막을 형성할 수 있다.According to this invention, the iridium plating film in which the generation | occurrence | production of the crack was suppressed as much as possible can be formed.

도 1은 실시예1의 도금 표면 관찰 사진.
도 2는 금속 첨가 없음의 도금 표면 관찰 사진.
도 3은 실시예2의 도금 표면 관찰 사진.
도 4는 실시예2의 Co 함유량 20.0g/L의 도금 표면 관찰 사진.
도 5는 실시예3의 도금 표면 관찰 사진.
도 6은 실시예3의 Ni 함유량 15.0g/L의 도금 표면 관찰 사진.
도 7은 실시예4의 도금 표면 관찰 사진.
도 8은 실시예5의 도금 표면 관찰 사진.
1 is a photograph of the plating surface observation of Example 1.
2 is a photograph of the plating surface observation without metal addition.
Figure 3 is a photograph of the plated surface observation of Example 2.
4 is a photograph of observation of a plating surface with a Co content of 20.0 g / L in Example 2. FIG.
5 is a photograph of the plating surface observation of Example 3. FIG.
6 is a photograph of a plated surface observation of 15.0 g / L Ni content in Example 3. FIG.
7 is a photograph of the plating surface observation of Example 4.
8 is a photograph of the plating surface observation of Example 5. FIG.

이하, 본 발명의 실시 형태에 대해, 실시예를 참조하면서 상세 설명한다.EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described in detail, referring an Example.

실시예1 :Example 1

이 실시예1에서는, 이리듐 도금액에 Fe를 첨가한 경우에 대해 설명한다. 이 실시예1의 액 조성은 다음과 같다.In this Example 1, the case where Fe is added to an iridium plating liquid is demonstrated. The liquid composition of this Example 1 is as follows.

헥사브로모이리듐(Ⅲ)산나트륨 15g/L(이리듐 금속 환산)15 g / L sodium hexabromoiridium (III) acid (in terms of iridium metal)

붕산 40g/LBoric Acid 40g / L

말론산2나트륨 0.02mol/LSodium malonate 0.02mol / L

황산철7수화물 0.01g/L(철 금속 환산)Ferrous sulfate heptahydrate 0.01 g / L (iron metal conversion)

실시예1에서는, 이리듐 화합물로서, 상기 헥사브로모이리듐(Ⅲ)산나트륨에, 「디카르복시산염」으로서의 말론산2나트륨을 가하고, 핫 배쓰에서 85℃로 유지하면서 마그네틱 스터러로 1시간 교반한 것을 사용했다. 그 이리듐 도금액에, 황산철7수화물을 가하여, 도금액에 0.01g/L의 Fe를 함유시켰다.In Example 1, as the iridium compound, dibasic sodium malonic acid as a "dicarboxylate" was added to the above hexabromoiridium (III) acid, and the mixture was stirred for 1 hour with a magnetic stirrer while being maintained at 85 ° C in a hot bath. Used one. Iron sulfate hexahydrate was added to the iridium plating solution, and the plating solution contained 0.01 g / L of Fe.

그리고, 2cm×2cm의 황동편의 테스트 피스에, 금 스트라이크 도금 처리를 행하여, 1.0㎛두께의 금 도금 처리 후, 두께3.0㎛의 이리듐 도금 피막을 형성했다. 도금 처리 조건은, pH 3.5?4.0, 액 온도 80?85℃, 전류 밀도 0.5A/dm2로 했다.And the gold strike plating process was performed to the test piece of the brass piece of 2cmx2cm, and the 3.0-micrometer-thick iridium plating film was formed after the gold plating process of 1.0 micrometer thickness. Plating process conditions were pH 3.5-4.0, liquid temperature 80-85 degreeC, and current density of 0.5 A / dm <2> .

피복한 이리듐 도금 피막에 대해, 금속 현미경(400배)을 사용하여 도금 성상을 관찰했다. 그 결과를 도 1에 나타낸다.About the coated iridium plating film, plating property was observed using the metal microscope (400 times). The result is shown in FIG.

또한, 비교를 위해서, Fe, Co, Ni, Cu의 어느 것도 첨가하여 있지 않는 블랭크의 이리듐 도금액에 의해, 이리듐 도금 피막을 형성한 것을 제작했다. 이 블랭크의 도금 조건은, Fe를 함유시킨 경우와 같이 했다. 그 결과를 도 2에 나타낸다.In addition, the thing in which the iridium plating film was formed by the blank iridium plating liquid which none of Fe, Co, Ni, and Cu were added for the comparison was produced. The plating conditions of this blank were made like the case where Fe was contained. The results are shown in Fig.

도 2에 나타내는 바와 같이, Fe를 함유하여 있지 않는 이리듐 도금액으로 피복한 것은, 표면에 많은 크랙이 발생하여 있는 것이 확인되었다. 한편, 도 1에 나타내는 바와 같이 Fe를 함유시킨 이리듐 도금액의 경우는, 크랙이 거의 확인되지 않았다.As shown in FIG. 2, what covered with the iridium plating liquid containing no Fe confirmed that many cracks generate | occur | produced on the surface. On the other hand, in the case of the iridium plating liquid containing Fe as shown in FIG. 1, the crack was hardly confirmed.

또한, Fe의 함유량을 0.005g/L, 0.01g/L, 0.5g/L, 5.0g/L, 10g/L로 변화시키고, 그 크랙의 발생 상태를 확인한 바, 0.005g/L에서는 크랙의 발생이 확인되었지만, 0.01g/L 이상에서는 크랙의 발생이 확인되지 않았다.In addition, the content of Fe was changed to 0.005 g / L, 0.01 g / L, 0.5 g / L, 5.0 g / L, and 10 g / L, and the occurrence of cracks was confirmed. Although it confirmed, the generation | occurrence | production of a crack was not confirmed at 0.01 g / L or more.

실시예2 :Example 2

이 실시예2에서는, 이리듐 도금액에 Co를 첨가한 경우에 대해 설명한다. 이 실시예2의 액 조성은 다음과 같다.In Example 2, the case where Co is added to the iridium plating solution will be described. The liquid composition of this Example 2 is as follows.

헥사브로모이리듐(Ⅲ)산나트륨 15g/L(이리듐 금속 환산)15 g / L sodium hexabromoiridium (III) acid (in terms of iridium metal)

붕산 40g/LBoric Acid 40g / L

시트르산2나트륨 0.05mol/LSodium citrate 0.05mol / L

황산코발트7수화물 0.5g/L(코발트 금속 환산)Cobalt sulfate heptahydrate 0.5 g / L (cobalt metal conversion)

실시예2에서는, 이리듐 화합물로서, 상기 헥사브로모이리듐(Ⅲ)산나트륨에, 「히드록시카르복시산염」으로서의 시트르산2나트륨을 가하고, 핫 배쓰에서 85℃로 유지하면서 마그네틱 스터러로 1시간 교반한 것을 사용했다. 그 이리듐 도금액에, 황산코발트를 가하여, 도금액에 0.5g/L의 Co를 함유시켰다.In Example 2, as the iridium compound, dibasic sodium citrate as "hydroxycarboxylate" was added to the hexabromoiridium (III) acid, and stirred for 1 hour with a magnetic stirrer while maintaining the temperature at 85 ° C in a hot bath. Used one. Cobalt sulfate was added to this iridium plating liquid, and 0.5 g / L of Co was contained in the plating liquid.

그리고, 2cm×2cm의 황동편의 테스트 피스에, 금 스트라이크 도금 처리를 행하여, 1.0㎛두께의 금 도금 처리 후, 두께3.0㎛의 이리듐 도금 피막을 형성했다. 도금 처리 조건은, pH 3.5?4.0, 액 온도 80?85℃, 전류 밀도 0.5A/dm2로 했다.And the gold strike plating process was performed to the test piece of the brass piece of 2cmx2cm, and the 3.0-micrometer-thick iridium plating film was formed after the gold plating process of 1.0 micrometer thickness. Plating process conditions were pH 3.5-4.0, liquid temperature 80-85 degreeC, and current density of 0.5 A / dm <2> .

피복한 이리듐 도금 피막에 대해, 금속 현미경(400배)을 사용하여 도금 성상을 관찰했다. 그 결과를 도 3에 나타낸다.About the coated iridium plating film, plating property was observed using the metal microscope (400 times). The results are shown in Fig.

도 3에 나타내는 바와 같이, Co를 함유시킨 이리듐 도금액의 경우는 크랙이 거의 확인되지 않았다.As shown in FIG. 3, in the case of the iridium plating liquid containing Co, cracks were hardly confirmed.

또한, Co의 함유량을 0.005g/L, 0.01g/L, 0.5g/L, 5.0g/L, 10g/L로 변화시키고, 그 크랙의 발생 상태를 확인한 바, 0.005g/L에서는 크랙의 발생이 확인되었지만, 0.01g/L 이상에서는 크랙의 발생이 확인되지 않았다.In addition, the content of Co was changed to 0.005 g / L, 0.01 g / L, 0.5 g / L, 5.0 g / L, and 10 g / L, and the crack generation was confirmed. Although it confirmed, the generation | occurrence | production of a crack was not confirmed at 0.01 g / L or more.

또한, Co의 함유량을 20.0g/L로 하고, 금속 현미경(400배)을 사용하여 도금 성상을 관찰했다. 그 결과를 도 4에 나타낸다. Co의 함유량 20.0g/L에서는 정상적인 석출은 얻어지지 않았다.Moreover, content of Co was made into 20.0 g / L, and plating property was observed using the metal microscope (400 times). The result is shown in FIG. At Co content 20.0 g / L, no normal precipitation was obtained.

실시예3 :Example 3:

이 실시예3에서는, 이리듐 도금액에 Ni를 첨가한 경우에 대해 설명한다. 이 실시예3의 액 조성은 다음과 같다.In Example 3, the case where Ni is added to the iridium plating solution will be described. The liquid composition of this Example 3 is as follows.

헥사브로모이리듐(Ⅲ)산나트륨 15g/L(이리듐 금속 환산)15 g / L sodium hexabromoiridium (III) acid (in terms of iridium metal)

붕산 40g/LBoric Acid 40g / L

옥살산 0.05mol/LOxalic acid 0.05mol / L

황산니켈6수화물 0.5g/L(니켈 금속 환산)Nickel Sulfate Heptahydrate 0.5g / L (In terms of Nickel Metal)

실시예3에서는, 이리듐 화합물로서, 상기 헥사브로모이리듐(Ⅲ)산나트륨에, 「디카르복시산염」으로서의 옥살산을 가하고, 핫 배쓰에서 85℃로 유지하면서 마그네틱 스터러로 1시간 교반한 것을 사용했다. 그 이리듐 도금액에, 황산니켈6수화물을 가하여, 도금액에 0.5g/L의 Ni를 함유시켰다.In Example 3, as the iridium compound, an oxalic acid as a "dicarboxylate" was added to the hexabromoiridium (III) acid salt, followed by stirring for 1 hour with a magnetic stirrer while maintaining the temperature at 85 ° C in a hot bath. . Nickel sulfate hexahydrate was added to the iridium plating solution to contain 0.5 g / L of Ni in the plating solution.

그리고, 2cm×2cm의 황동편의 테스트 피스에, 금 스트라이크 도금 처리를 행하여, 1.0㎛두께의 금 도금 처리 후, 두께3.0㎛의 이리듐 도금 피막을 형성했다. 도금 처리 조건은, pH 3.5?4.0, 액 온도 80?85℃, 전류 밀도 0.5A/dm2로 했다.And the gold strike plating process was performed to the test piece of the brass piece of 2cmx2cm, and the 3.0-micrometer-thick iridium plating film was formed after the gold plating process of 1.0 micrometer thickness. Plating process conditions were pH 3.5-4.0, liquid temperature 80-85 degreeC, and current density of 0.5 A / dm <2> .

피복한 이리듐 도금 피막에 대해, 금속 현미경(400배)을 사용하여 도금 성상을 관찰했다. 그 결과를 도 5에 나타낸다.About the coated iridium plating film, plating property was observed using the metal microscope (400 times). The result is shown in FIG.

도 5에 나타내는 바와 같이, Ni를 함유시킨 이리듐 도금액의 경우는 크랙이 거의 확인되지 않았다.As shown in FIG. 5, in the case of the iridium plating solution containing Ni, cracks were hardly confirmed.

또한, Ni의 함유량을 0.005g/L, 0.01g/L, 0.5g/L, 5.0g/L, 10g/L로 변화시키고, 그 크랙의 발생 상태를 확인한 바, 0.005g/L에서는 크랙의 발생이 확인되었지만, 0.01g/L 이상에서는 크랙의 발생이 확인되지 않았다.In addition, when the content of Ni was changed to 0.005 g / L, 0.01 g / L, 0.5 g / L, 5.0 g / L, and 10 g / L, and the occurrence state of the crack was confirmed, crack generation occurred at 0.005 g / L. Although it confirmed, the generation | occurrence | production of a crack was not confirmed at 0.01 g / L or more.

또한, Ni의 함유량을 15.0g/L로 하고, 금속 현미경(400배)을 사용하여 도금 성상을 관찰했다. 그 결과를 도 6에 나타낸다. Ni의 함유량 15.0g/L에서는 정상적인 석출은 얻어지지 않았다.Moreover, Ni content was 15.0 g / L and plating property was observed using the metal microscope (400 times). The result is shown in FIG. Normal precipitation was not obtained in Ni content of 15.0 g / L.

실시예4 :Example 4:

이 실시예4에서는, 이리듐 도금액에 Cu를 첨가한 경우에 대해 설명한다. 이 실시예4의 액 조성은 다음과 같다.In Example 4, the case where Cu is added to the iridium plating solution will be described. The liquid composition of this Example 4 is as follows.

헥사브로모이리듐(Ⅲ)산나트륨 15g/L(이리듐 금속 환산)15 g / L sodium hexabromoiridium (III) acid (in terms of iridium metal)

붕산 40g/LBoric Acid 40g / L

아세트산 0.02mol/LAcetic acid 0.02mol / L

황산구리5수화물 0.01g/L(구리 금속 환산)Copper sulfate pentahydrate 0.01 g / L (copper metal conversion)

실시예4에서는, 이리듐 화합물로서, 상기 헥사브로모이리듐(Ⅲ)산나트륨에, 「모노카르복시산염」으로서의 아세트산을 가하고, 핫 배쓰에서 85℃로 유지하면서 마그네틱 스터러로 1시간 교반한 것을 사용했다. 그 이리듐 도금액에, 황산구리5수화물을 가하여, 도금액에 0.01g/L의 Cu를 함유시켰다.In Example 4, as the iridium compound, an acetic acid as "monocarboxylate" was added to the above hexabromoiridium (III) acid, and the mixture was stirred for 1 hour with a magnetic stirrer while being maintained at 85 ° C in a hot bath. . Copper sulfate pentahydrate was added to this iridium plating liquid, and 0.01 g / L of Cu was contained in the plating liquid.

그리고, 2cm×2cm의 황동편의 테스트 피스에, 금 스트라이크 도금 처리를 행하여, 1.0㎛두께의 금 도금 처리 후, 두께3.0㎛의 이리듐 도금 피막을 형성했다. 도금 처리 조건은, pH 3.5?4.0, 액 온도 80?85℃, 전류 밀도 0.5A/dm2로 했다.And the gold strike plating process was performed to the test piece of the brass piece of 2cmx2cm, and the 3.0-micrometer-thick iridium plating film was formed after the gold plating process of 1.0 micrometer thickness. Plating process conditions were pH 3.5-4.0, liquid temperature 80-85 degreeC, and current density of 0.5 A / dm <2> .

피복한 이리듐 도금 피막에 대해, 금속 현미경(400배)을 사용하여 도금 성상을 관찰했다. 그 결과를 도 7에 나타낸다.About the coated iridium plating film, plating property was observed using the metal microscope (400 times). The results are shown in Fig.

도 7에 나타내는 바와 같이, Cu를 함유시킨 이리듐 도금액의 경우는 크랙이 거의 확인되지 않았다.As shown in FIG. 7, cracks were hardly confirmed in the case of the iridium plating liquid containing Cu.

또한, Cu의 함유량을 0.005g/L, 0.01g/L, 0.5g/L, 1.0g/L로 변화시키고, 그 크랙의 발생 상태를 확인한 바, 0.005g/L에서는 크랙의 발생이 확인되었지만, 0.01g/L 이상에서는 크랙의 발생이 확인되지 않았다.In addition, when the content of Cu was changed to 0.005 g / L, 0.01 g / L, 0.5 g / L, and 1.0 g / L, and the occurrence state of the crack was confirmed, the occurrence of crack was confirmed at 0.005 g / L. The occurrence of crack was not confirmed at 0.01 g / L or more.

실시예5 :Example 5:

이 실시예5에서는, 이리듐 도금액에 Co를 첨가한 경우에 대해 설명한다. 이 실시예5의 액 조성은 다음과 같다.In Example 5, the case where Co is added to the iridium plating solution will be described. The liquid composition of this Example 5 is as follows.

헥사클로로이리듐(Ⅲ)산나트륨 5g/L(이리듐 금속 환산)5 g / L sodium hexachloroiridium (III) acid (in terms of iridium metal)

붕산 20g/LBoric Acid 20g / L

말론산2나트륨 0.10mol/LSodium malonate 0.10mol / L

황산코발트7수화물 0.5g/L(코발트 금속 환산)Cobalt sulfate heptahydrate 0.5 g / L (cobalt metal conversion)

실시예5에서는, 이리듐 화합물로서, 상기 헥사클로로이리듐(Ⅲ)산나트륨에, 디카르복시산염으로서의 말론산2나트륨을 가하고, 핫 배쓰에서 85℃로 유지하면서 마그네틱 스터러로 1시간 교반한 것을 사용했다. 그 이리듐 도금액에, 황산코발트를 가하여, 도금액에 0.5g/L의 Co를 함유시켰다.In Example 5, as the iridium compound, the sodium hexachloroiridium (III) acid was added to sodium borohydride as dicarboxylate, and stirred for 1 hour with a magnetic stirrer while being maintained at 85 ° C in a hot bath. . Cobalt sulfate was added to this iridium plating liquid, and 0.5 g / L of Co was contained in the plating liquid.

그리고, 2cm×2cm의 황동편의 테스트 피스에, 금 스트라이크 도금 처리를 행하여, 1.0㎛두께의 금 도금 처리 후, 두께3.0㎛의 이리듐 도금 피막을 형성했다. 도금 처리 조건은, pH 3.5?4.0, 액 온도 80?85℃, 전류 밀도 0.2A/dm2로 했다.And the gold strike plating process was performed to the test piece of the brass piece of 2cmx2cm, and the 3.0-micrometer-thick iridium plating film was formed after the gold plating process of 1.0 micrometer thickness. Plating process conditions were pH 3.5-4.0, liquid temperature 80-85 degreeC, and current density of 0.2 A / dm <2> .

피복한 이리듐 도금 피막에 대해, 금속 현미경(400배)을 사용하여 도금 성상을 관찰했다. 그 결과를 도 8에 나타낸다.About the coated iridium plating film, plating property was observed using the metal microscope (400 times). The result is shown in FIG.

도 8에 나타내는 바와 같이, Co를 함유시킨 이리듐 도금액의 경우는 크랙이 거의 확인되지 않았다.As shown in FIG. 8, in the case of the iridium plating solution containing Co, cracks were hardly confirmed.

실시예6 :Example 6:

이 실시예6에서는, 이리듐 도금액에 Ni를 첨가하고, 도금 조건을 변화시킨 경우에 대해 설명한다. 이 실시예6의 액 조성은 다음과 같다.In the sixth embodiment, the case where Ni is added to the iridium plating solution and the plating conditions are changed will be described. The liquid composition of this Example 6 is as follows.

헥사브로모이리듐(Ⅲ)산나트륨 10g/L(이리듐 금속 환산)10 g / L sodium hexabromoiridium (III) acid (in terms of iridium metal)

붕산 30g/LBoric Acid 30g / L

옥살산 0.05mol/LOxalic acid 0.05mol / L

황산니켈6수화물 0.5g/L(니켈 금속 환산)Nickel Sulfate Heptahydrate 0.5g / L (In terms of Nickel Metal)

실시예6에서는, 이리듐 화합물로서, 상기 헥사브로모이리듐(Ⅲ)산나트륨에, 디카르복시산염으로서의 옥살산을 가하고, 핫 배쓰에서 85℃로 유지하면서 마그네틱 스터러로 1시간 교반한 것을 사용했다. 그 이리듐 도금액에, 황산니켈6수화물을 가하여, 도금액에 0.5g/L의 Ni를 함유시켰다.In Example 6, as the iridium compound, oxalic acid as a dicarboxylate was added to the above hexabromoiridium (III) acid, and the mixture was stirred for 1 hour with a magnetic stirrer while being maintained at 85 ° C in a hot bath. Nickel sulfate hexahydrate was added to the iridium plating solution to contain 0.5 g / L of Ni in the plating solution.

그리고, 2cm×2cm의 황동편의 테스트 피스에, 금 스트라이크 도금 처리를 행하여, 1.0㎛두께의 금 도금 처리 후, 두께3.0㎛의 이리듐 도금 피막을 형성하여, 석출 효율을 측정했다. 도금 처리 조건은, pH 2.0?8.5, 액 온도 40?95℃, 전류 밀도 0.01?2.0A/dm2로 했다.And the gold strike plating process was performed to the test piece of the brass piece of 2cmx2cm, the gold plating process of 1.0 micrometer thickness was formed, the 3.0-micrometer-thick iridium plating film was formed, and precipitation efficiency was measured. Plating process conditions were pH 2.0-8.5, liquid temperature 40-95 degreeC, and current density of 0.01-2.0 A / dm <2> .

액 온도 85℃, 전류 밀도 0.5A/dm2로 하고, pH를 변화시켰을 때의 석출 효율을 측정했다.Precipitation efficiency at the time of changing the pH to liquid temperature of 85 degreeC and current density of 0.5 A / dm <2> was measured.

pH 0.5에서는 석출 효율은 0%가 되어 석출하지 않았다. pH 3.0에서는 석출 효율은 85%이며, 크랙은 확인되지 않았다. pH 4.0?7.0까지는 석출 효율은 95%?100%이며, 크랙은 확인되지 않았다. 또한 pH 8.5에서는 수산화물의 침전이 발생했다.At pH 0.5, the precipitation efficiency became 0% and did not precipitate. At pH 3.0, the precipitation efficiency was 85% and no crack was observed. The precipitation efficiency was 95% -100% until pH 4.0-7.0, and no crack was confirmed. Further, precipitation of hydroxide occurred at pH 8.5.

다음으로 전류 밀도 0.5A/dm2, pH 3.5로 하고, 욕온(浴溫)을 변화시켰을 때의 석출 효율을 측정했다.Next, the current density was set to 0.5 A / dm 2 and pH 3.5, and the precipitation efficiency when the bath temperature was changed was measured.

욕온 40℃에서는 석출 효율은 0%로 석출하지 않았다. 욕온 50℃에서는 석출 효율은 35%이며, 크랙이 확인되었다. 욕온 60℃?70℃까지는 석출 효율은 40%?60%이며, 크랙은 확인되지 않았다. 욕온 80℃?95℃에서는 석출 효율은 90?100%이며, 크랙은 확인되지 않았다. 또한, 욕온을 99℃까지 올린 경우, 도금욕(鍍金浴)으로부터의 물의 증발이 격렬하게 되어, 안정한 도금 처리를 행하는 것이 곤란하게 되었다.At bath temperature 40 degreeC, precipitation efficiency did not precipitate to 0%. At bath temperature of 50 degreeC, precipitation efficiency was 35% and the crack was confirmed. Precipitation efficiency was 40%-60%, and the crack was not confirmed until bath temperature 60 degreeC-70 degreeC. Precipitation efficiency was 90-100% at the bath temperature of 80 degreeC-95 degreeC, and the crack was not confirmed. Moreover, when bath temperature was raised to 99 degreeC, evaporation of the water from a plating bath became intense, and it became difficult to perform stable plating process.

다음으로 욕온 85℃, pH 3.5로 하고, 전류 밀도를 변화시켰을 때의 석출 효율을 측정했다.Next, the bath temperature was 85 ° C and pH 3.5, and the precipitation efficiency when the current density was changed was measured.

전류 밀도 0.01A/dm2에서는 석출 효율은 50%이며, 크랙은 확인되지 않았다. 전류 밀도 0.02A/dm2?1.0A/dm2에서는 석출 효율은 90?100%이며, 크랙은 확인되지 않았다. 전류 밀도 1.5A/dm2에서는 석출 효율은 60%이며, 크랙은 확인되지 않았다. 전류 밀도 3.0A/dm2에서는 석출 효율은 20%이며, 크랙이 확인되었다. 또한, 전류 밀도 3.5A/dm2까지 올린 경우, 수소가 발생하여, 정상적인 석출은 얻어지지 않았다.At the current density of 0.01 A / dm 2 , the precipitation efficiency was 50%, and no crack was observed. At current density of 0.02 A / dm 2 to 1.0 A / dm 2 , the precipitation efficiency was 90 to 100%, and no crack was observed. At a current density of 1.5 A / dm 2 , the precipitation efficiency was 60%, and no crack was observed. At a current density of 3.0 A / dm 2 , the precipitation efficiency was 20% and cracks were observed. In addition, when the current density was raised to 3.5 A / dm 2 , hydrogen was generated, and normal precipitation was not obtained.

크랙의 발생이 극력 억제된 이리듐 도금 피막을 용이하게 형성할 수 있다.It is possible to easily form an iridium plated film in which the occurrence of cracks is suppressed as much as possible.

Claims (3)

음이온 성분이 할로겐인 이리듐(Ⅲ) 착염에, 포화 모노카르복시산, 포화 모노카르복시산염, 포화 디카르복시산, 포화 디카르복시산염, 포화 히드록시카르복시산, 포화 히드록시카르복시산염, 아미드, 요소로 이루어지는 군에서 선택된 1종 이상의 화합물을 가하고 교반하여 얻어지는 이리듐 화합물을 사용하는 이리듐 도금액에 있어서,
Fe, Co, Ni, Cu의 적어도 1종 이상을 함유하는 것을 특징으로 하는 이리듐 도금액.
1 selected from the group consisting of saturated monocarboxylic acid, saturated monocarboxylic acid salt, saturated dicarboxylic acid, saturated dicarboxylic acid salt, saturated hydroxycarboxylic acid, saturated hydroxycarboxylic acid salt, amide, urea to iridium (III) complex salt whose anion component is halogen In the iridium plating liquid using the iridium compound obtained by adding and stirring a compound of species or more,
An iridium plating solution containing at least one of Fe, Co, Ni, and Cu.
제1항에 있어서,
Fe, Co, Ni, Cu의 적어도 1종 이상의 함유량은 0.01g/L?10g/L인 이리듐 도금액.
The method of claim 1,
An iridium plating solution in which at least one or more of Fe, Co, Ni, and Cu is 0.01 g / L to 10 g / L.
제1항 또는 제2항에 기재된 도금액을 사용하여, pH 1?8, 온도 50?98℃, 전류 밀도 0.01?3.0A/dm2의 조건에서 도금하는 이리듐 도금 방법.The iridium plating method of plating on the conditions of pH 1-8, the temperature of 50-98 degreeC, and the current density of 0.01-3.0 A / dm <2> using the plating liquid of Claim 1 or 2.
KR1020100091549A 2010-09-17 2010-09-17 Iridium plating solution and method of plating using the same KR20120029634A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111334811A (en) * 2020-04-10 2020-06-26 扬州工业职业技术学院 Method for plating iridium on surface of steel strip

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111334811A (en) * 2020-04-10 2020-06-26 扬州工业职业技术学院 Method for plating iridium on surface of steel strip
CN111334811B (en) * 2020-04-10 2022-03-18 扬州工业职业技术学院 Method for plating iridium on surface of steel strip

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