KR20120010736A - Deposition apparatus - Google Patents

Abstract

PURPOSE: A deposition apparatus is provided to properly adjust the deposition speed of a deposition material by regulating a distance between a deposition speed detection element and the outlet of a detection nozzle. CONSTITUTION: A deposition apparatus comprises a dispersion container(14), material inlet pipes(18A,18B), a deposition speed detection element(33), and a deposition speed regulating unit(34). Multiple deposition nozzles are formed inside the dispersion container. The material inlet pipes are connected to the dispersion container and have control valves. A detection nozzle penetrates through the dispersion container. The deposition speed detection element detects the deposition speed of a deposition material emitted from the detection nozzle. The deposition speed regulating unit regulates a gap between the deposition speed detection element and the outlet of the detection nozzle.

Description

Vapor Deposition Equipment {DEPOSITION APPARATUS}

TECHNICAL FIELD This invention relates to the vapor deposition apparatus provided with the detection apparatus which detects a vapor deposition rate (deposition rate).

For example, Patent Document 1 discloses a deposition apparatus of an up deposition type. In this vapor deposition apparatus, a substrate is supported by a support on an upper portion of a film formation chamber maintained in a vacuum state. Further, in the lower part of the film formation chamber, a dispersing container having a plurality of discharge nozzles facing the substrate is disposed. Below the deposition chamber, a plurality of evaporation cells are provided for evaporating the deposition material. In addition, a material inflow pipe is connected to these evaporation cells, and these material inflow pipes penetrate the bottom wall of the film formation chamber and are connected to the dispersion vessel. Each material inlet pipe is provided with a control valve for controlling the deposition rate.

Then, a first crystal oscillator for monitoring the deposition rate of the deposition material on the substrate is disposed in the vicinity of the substrate. In addition, detection nozzles for releasing a part of the material are provided on the sides of each dispersion container, respectively, and second crystal vibrators for detecting the deposition rate are disposed opposite to these detection nozzles.

In the above conventional configuration, the deposition speed of the deposition material with respect to the second crystal oscillator of the deposition material discharged from the dispersion vessel through the discharge nozzle by the second crystal oscillator is detected and controlled by the film thickness control device based on the detection signal. The valve is feedback controlled. The first crystal vibrator is also for monitoring the deposition rate of the deposition material on the substrate.

Japanese Patent Laid-Open No. 2008-75095

However, in order to detect the deposition rate of the deposition material in the second crystal oscillator with excellent accuracy, the deposition rate of the deposition material for the second crystal oscillator is set corresponding to the deposition rate of the deposition material on the substrate. If the change in deposition rate of the deposition material is too large, a defect may occur.

For example, the first deposition for stabilizing deposition (referring to deposition at a uniform deposition rate) is performed at a deposition rate of 10 nm / sec on the substrate of the deposition material released through the discharge nozzle from the dispersion vessel. In the step, the deposition rate of the deposition material for the second quartz crystal oscillator is set to 1 ms / sec, and this 1 ms / sec is set to an appropriate value. Next, during the second deposition process using this dispersion vessel, the deposition rate of the deposition material released from the dispersion vessel through the discharge nozzle to the substrate is stabilized at 0.1 s / sec, which is 1/100 of the first deposition process. In this case, the deposition rate of the deposition material with respect to the second crystal oscillator is also 0.01 s / sec, which is 1/100 of the first deposition process, so that the detection signal becomes very small. In this way, if the deposition rate of the deposition material for the second quartz crystal is set to 0.01 Hz / sec which is significantly smaller than the appropriate value of 1 kV / sec, the signal / noise ratio (S / N ratio) in the second quartz crystal is small. It becomes easy to be greatly affected by noise. As a result, since the deposition rate cannot be detected with excellent accuracy, there is a problem that proper feedback control cannot be performed.

Further, in the third deposition step of stabilizing and depositing the deposition rate of the deposition material discharged from the dispersion vessel through the discharge nozzle to the substrate at 0.1 kW / sec, the deposition rate of the deposition material to the second quartz crystal is 1 kW / sec. It sets and sets this 1 ms / sec as an appropriate value. Next, during the fourth deposition process using this dispersion vessel, the deposition rate of the deposition material released from the dispersion vessel through the discharge nozzle to the substrate is set to be stabilized at 10 s / sec, which is 100 times that of the third deposition process. In this case, the deposition rate of the deposition material on the second crystal vibrator is also 100 s / sec, which is 100 times that of the third deposition process, and a large amount of deposition material is deposited on the second crystal vibrator. This causes a problem that the time (life) for which the second quartz crystal oscillator can detect the deposition rate becomes extremely short.

According to the present invention, even if the deposition rate of the deposition material on the deposition material (substrate) is drastically changed, the deposition rate can be detected with excellent accuracy, and the control of the control valve can be made appropriate. It is an object of the present invention to provide a vapor deposition apparatus having a vapor deposition rate detection apparatus which does not shorten its life.

The invention described in claim 1,

In the deposition chamber maintained in a vacuum state, a dispersion container including a plurality of deposition nozzles and a deposition material are disposed to face each other. In a vapor deposition apparatus in which a material inlet pipe having a control valve is connected to the dispersion vessel from an evaporation cell for evaporating vapor deposition material,

A detection nozzle is installed through the dispersion container, and a deposition rate detection device for detecting a deposition rate of the deposition material discharged from the detection nozzle is detected by the deposition nozzle. Disposed opposite the nozzle,

A deposition rate adjusting mechanism for moving at least one of the discharge port of the detection nozzle and at least one of the deposition rate detecting elements with respect to the other; ) Is installed.

In the invention described in claim 2, in the configuration described in claim 1,

The deposition rate adjusting mechanism includes an element adjusting device for moving the deposition rate detecting element to approach and separate the fixed detection nozzle,

In response to the deposition rate of the deposition material, the device adjusting device is operated to adjust the distance between the discharge port of the detection nozzle and the deposition rate detecting device, and based on the detection signal of the deposition rate detecting device. The deposition control device for controlling the control valve is installed.

Invention of Claim 3 is a structure of Claim 1,

The deposition rate adjusting mechanism is configured to move the detection nozzle forward, backward, or stretch, and to move the discharge nozzle toward or away from the deposition speed detection device by moving the detection nozzle forward, backward, or stretch. Equipped with a nozzle adjusting device,

In response to the deposition rate of the deposition material, the nozzle adjusting device is operated to adjust the distance between the discharge port of the detection nozzle and the deposition rate detecting element, and the control is performed by the detection signal of the deposition rate detecting element. The vapor deposition control apparatus which operates a valve is provided.

Invention of Claim 4 is a structure of Claim 2 or Claim 3,

Deposition control device,

Deposition rate: Q (Å / sec), the distance between the discharge port of the detection nozzle and the deposition rate detection element: L (mm), coefficient for the deposition rate: k,

Q (L) = k (1 / L ² ). … Based on equation (1),

The distance between the discharge port of the detection nozzle and the deposition rate detection device: L is obtained and the device adjusting device or the nozzle adjusting device is operated.

According to the invention as set forth in claim 1, when the deposition rate of the deposition material discharged from the dispersion vessel through the deposition nozzle is changed by the deposition rate, the distance between the discharge port of the detection nozzle and the deposition rate detection element is determined by the deposition rate adjusting means. By changing, the deposition rate for the deposition rate detection element can be changed to an appropriate value. As a result, even if the deposition rate of the deposition material on the deposition material is drastically changed, the deposition rate detection device can obtain a detection signal having an appropriate size, and the detection signal / noise ratio (S / N ratio) can be sufficiently large. It does not affect noise, and control of a control valve can be made appropriate. In addition, the deposition rate for the deposition rate detection device is increased so that the life is not extremely shortened.

According to the invention as set forth in claim 2, the element adjusting device constituting the deposition rate adjusting means makes the deposition material for the deposition rate detecting element by adjusting the mutual distance by approaching and separating the deposition rate detecting element with respect to the discharge port of the detection nozzle. The deposition rate of can be adjusted to an appropriate value.

According to the invention as set forth in claim 3, the deposition material for the deposition rate detecting element is adjusted by adjusting the mutual distance by approaching and separating the discharge port of the detection nozzle with respect to the deposition rate detecting element by the nozzle adjusting device constituting the deposition rate adjusting means. The deposition rate of can be adjusted to an appropriate value.

According to the invention as set forth in claim 4, in the deposition control apparatus, the distance between the discharge port of the detection nozzle and the deposition rate detecting element: L is determined based on equation (1), and the detection nozzle is released by operating the element adjusting device or the nozzle adjusting device. The distance between the sphere and the deposition rate detection element can be adjusted with excellent precision.

1 is a schematic configuration diagram showing Embodiment 1 of a vapor deposition apparatus according to the present invention.
2 is a block diagram of a deposition rate adjusting means including an element adjusting device.
3 is a graph showing the relationship between deposition rate and distance.
Fig. 4 shows Embodiment 2 of the vapor deposition apparatus according to the present invention, which is a block diagram of the vapor deposition rate adjusting means including the nozzle adjusting device.
Fig. 5 shows Embodiment 3 of the vapor deposition apparatus in accordance with the present invention, which is a block diagram of a vapor deposition rate adjusting means including another nozzle adjustment apparatus.

Example 1

EMBODIMENT OF THE INVENTION Hereinafter, Example 1 of the vapor deposition apparatus which concerns on this invention is described based on drawing.

(Overall structure)

As shown in FIG. 1, a substrate support for supporting a substrate 12, which is a material to be deposited, on an upper portion of the deposition chamber 11 maintained in a vacuum state. A glove 13 is disposed, and a dispersing container 14 is disposed below the film formation chamber 11 so as to face the substrate 12. The first evaporation cell 16A for evaporating the first evaporation material by the heating device and the second evaporation cell 16B for evaporating the second evaporation material by the heating device are formed in the deposition chamber 11. It is installed in the lower outer side of the bottom, respectively. The material inflow pipes 18A and 18B respectively connected to the first evaporation cell and the second evaporation cell 16A and 16B are connected to the confluence pipe 18C. 18C penetrates through the bottom wall of the film formation chamber 11, and is connected to the center part of the bottom wall 14d in the dispersion container 14. First material valves 18A and 18B are inserted with first control valves and second control valves 17A and 17B capable of controlling respective deposition rates of the first deposition material and the second deposition material.

The dispersion vessel 14 uniformly disperses the deposition material introduced from the confluence pipe 18C, and a plurality of deposition nozzles 15 are arranged on the upper wall 14u at predetermined intervals. It is installed through. In addition, a shutter 19 for opening and closing which can open and close the opening of the vapor deposition nozzle 15 is provided on the top of the dispersion container 14. The shutter device 19 includes a shutter plate 19a having a discharge hole 19b capable of opening and closing an opening, and sliding the shutter plate 19a by a predetermined amount in the horizontal direction. It is comprised by the shutter drive part 19c which slides and opens and closes the vapor deposition nozzle 15. As shown in FIG.

In the above configuration, the vapor deposition material evaporated by the first evaporation cell and the second evaporation cells 16A and 16B is transferred from the material inlet pipes 18A and 18B to the first control valve, the second control valves 17A and 17B, and It is introduced into the dispersion vessel 14 through the confluence pipe 18C, and the deposition material is discharged from the deposition nozzle 15 toward the substrate 12 to be uniformly deposited on the substrate 12.

(Deposition rate detection device)

The deposition chamber 11 is provided with a deposition rate detecting device 31 for detecting the deposition rate with respect to the substrate 12.

The deposition rate detecting apparatus 31 is provided with a detection nozzle 32 which penetrates through one side wall 14s in the dispersion container 14 and discharges a part of the evaporation material. A movable deposition rate detecting element 33 disposed opposite the detection nozzle 32 and made of a crystal oscillator, and a discharge port of the detection nozzle 32; A deposition rate adjusting mechanism 34 capable of adjusting the deposition rate with respect to the deposition rate detecting element 33 by adjusting the distance between the amplifier 32a and the deposition rate detecting element 33; A deposition rate detection section 35 for obtaining a deposition rate based on the detection signal of the speed detection element 33 is provided, and the detection value of the deposition rate detection section 35 controls deposition. Output to the apparatus 21 is carried out.

As shown in Fig. 2, the deposition rate adjusting mechanism 34 moves the deposition rate detecting element 33 close to and away from the discharge port 32a of the fixed detection nozzle 32. An element adjusting device 36 for adjusting the deposition rate with respect to the deposition rate detection element 33 is provided. The element adjusting device 36 comprises a linear moving device composed of a rack and pinion mechanism, and the linear moving device includes an element holder for supporting the deposition rate detecting element 33. And a rack member 38 which is guided to move in a direction parallel to the axis center of the detection nozzle 32, and to the rack teeth of the rack member 38. A regulating motor capable of positioning the pinion 39 and the pinion 39 by driving the pinion 39 forward and backward to move the deposition rate detecting element 33 to position the deposition rate detecting element 33. A rotary encoder (element position detector) capable of detecting the position of the deposition rate detecting element 33 from the rotational direction and the rotation angle of the motor 40 for adjustment.檢出 器) 41 is provided.

The deposition control apparatus 21 controls the heating temperature of the evaporation cells 16A and 16B based on the operation signal input from the manipulator 22 and the detection value detected by the deposition rate detector 35. Then, the first and second control valves 17A and 17B and the shutter device 19 are opened and closed, respectively.

In addition, the deposition control apparatus 21 drives the motor 40 for adjustment through the adjustment drive part 23 by the element adjustment apparatus 36, and the discharge port 32a of the detection nozzle 32 is carried out. The distance L of the deposition rate detecting element 33 with respect to is adjusted. Accordingly, the deposition material emitted from the detection nozzle 32 can be deposited on the deposition rate detecting element 33 at an appropriate deposition rate.

However, the deposition rate of the deposition material deposited on the deposition rate detection element 33: Q (Å / sec), the distance between the discharge port 32a of the deposition rate detection nozzle 32 and the deposition rate detection element 33: L ( mm), coefficient for deposition rate: k (≒ 1),

Deposition rate: between Q and distance: L

Q (L) = k (1 / L ² ). (Eq. 1)

The relationship is established.

In addition, if the coefficient k ≒ 1 regarding the deposition rate here, as shown in Fig. 3 by Equation 1, Q and (1 / L ² ) become a substantially linear proportional relationship. This indicates that the deposition rate Q decreases as the distance L becomes longer.

Here, deposition rate: Q1, Q2, distance: L1, L2,

(Q1 = k (1 / L1 ² ), Q2 = k (1 / L2 ² ),

Q1 × k (1 / L2 ² ) = Q2 × k (1 / L1 ² )

Q2 / Q1 = k (1 / L2 ² ) / k (1 / L1 ² )

Q2 / Q1 = L1 ² / L2 ²

… (식2)가 성립한다.

… (Equation 2) holds.

In the deposition control apparatus 21, the deposition rate of the deposition material with respect to the deposition rate detection element 33 initially set: Q1, and the discharge port 32a and the deposition rate detection element 33 of the deposition rate detection nozzle 32. The distance of L1 and the target deposition rate for the deposition rate detecting element 33 corresponding to the deposition rate of the deposition material on the substrate 12 input from the manipulator 22 are Q2. Based on the target distance: find L2. Then, the adjustment motor 23 is driven through the adjustment driver 23 so that the distance between the discharge port 32a of the deposition rate detection nozzle 32 and the deposition rate detection element 33 is L2. ), The deposition rate of the deposition material on the deposition rate detection element 33 is set to Q2.

The vapor deposition work in the above configuration will be described.

First, if necessary, the substrate 12 with a mask is brought into the film formation chamber 11 and attached to the substrate support 13. The first evaporation material is evaporated by inputting and heating the first evaporation material into the first evaporation cell 16A. Then, the first control valve 17A is opened and the first deposition material flows into the dispersion container 14 from the material inlet pipe 18A through the confluence pipe 18C. In the dispersion container 14, the deposition nozzle 15 is closed by the shutter device 19, and in the deposition rate detecting device 31, the deposition rate of the first deposition material on the deposition rate detecting element 33 is obtained. . That is, the evaporation material in the dispersion container 14 is discharged from the detection nozzle 32 and deposited on the deposition rate detecting element 33, and the deposition rate detecting unit 35 is deposited based on the detection signal of the deposition rate detecting element 33. The deposition rate of the first deposition material on the speed detection element 33 is detected.

In the deposition control apparatus 21, the first control valve 17A is operated on the basis of the detection value of the deposition rate detection unit 35, so that the deposition rate of the first deposition material on the deposition rate detection element 33 is the purpose. Feed-back control is carried out to achieve a deposition rate. When the target deposition rate is reached, the shutter device 19 is opened to release the first deposition material from the deposition nozzle 15 toward the substrate 12 to stabilize deposition on the substrate 12.

During the stabilization deposition, the detection signal detected by the deposition rate detecting element 33 in the deposition rate detecting device 31 is output to the deposition control apparatus 21 through the deposition rate detecting unit 35 at regular intervals, and the deposition control is performed. In the apparatus 21, the first control valve 17A is feedback-controlled based on this detected value so that the deposition rate of the first deposition material on the substrate 12 is controlled to be an appropriate value.

After the predetermined deposition time has elapsed, the first deposition material is deposited on the substrate 12 to a predetermined film thickness. The deposition of the first deposition material is performed by closing the shutter device 19 and closing the first control valve 17A. Is done.

Next, the second deposition material is evaporated from the second evaporation cell 16B, and the following film is laminated on the surface of the first deposition material of the substrate 12 to be deposited.

Here, for example, the deposition rate of the first deposition material on the deposition rate detection element 33 is Q1 = 10 (sec / sec), and the discharge port 32a and the deposition rate detection element 33 of the detection nozzle 32 are described. Distance: L1 = 10 (mm), the deposition rate of the second deposition material on the deposition rate detection element 33 is Q2 = 1 (1 / sec), and 1 / the deposition rate of the first deposition material. In the case of 10, the deposition control apparatus 21 calculates the distance L2 between the discharge port 32a of the detection nozzle 32 and the deposition rate detecting element 33 based on equation (2).

…… (식2)로부터

… … From (Equation 2)

L2 ≒ 3.16 (mm).

Further, when the deposition rate of the second deposition material on the deposition rate detection element 33 is Q2 = 100 (Å / sec) and 10 times that of the first deposition material,

L2 ≒ 31.6 (mm).

Based on the distance L2 obtained in this way, the adjustment motor 40 of the element adjusting apparatus 36 is driven by the deposition control apparatus 21 to change the position of the deposition rate detecting element 33.

In the vapor deposition operation, the second deposition material is introduced into the second evaporation cell 16B to be heated and evaporated, and the second control valve 17B is opened to transfer the second deposition material from the material inlet pipe 18B to the confluence pipe 18C. It flows into the dispersion vessel 14 through. In the dispersion vessel 14, the deposition nozzle 15 is closed by the shutter device 19, and the deposition rate is detected by the deposition rate detection device 31.

In the deposition control apparatus 21, on the basis of this detected value, the second control valve 17B is operated to perform feedback control to achieve the target deposition rate. When the desired deposition rate is reached, the shutter device 19 is opened to release the second deposition material from the deposition nozzle 15 toward the substrate 12 for stabilization deposition.

In addition, even during stabilization deposition, the detection signal detected by the deposition rate detecting element 33 in the deposition rate detecting device 31 is output to the deposition control apparatus 21 through the deposition rate detecting unit 35 at regular intervals. The control unit 21 controls the second control valve 17B based on this detected value so that the deposition rate of the second deposition material on the substrate 12 becomes an appropriate value.

After the predetermined deposition time has elapsed, when the second deposition material is deposited on the substrate 12 to a predetermined film thickness, the second deposition material is deposited by closing the shutter device 19 and closing the second control valve 17B. Is done.

(Effect of Example 1)

According to the first embodiment, when the deposition rate of the deposition material with respect to the substrate 12 discharged from the dispersion vessel 14 through the deposition nozzle 15 is changed, the detection nozzle ( By changing the distance L between the discharge opening 32a of the 32 and the deposition rate detecting element 33, the deposition rate of the first deposition material and the second deposition material with respect to the deposition rate detection element 33 is adjusted to an appropriate value. You can change it. As a result, the detection signal / noise ratio (S / N ratio) of the deposition rate detecting element 33 is sufficiently increased, so that the deposition rate of the first deposition material and the second deposition material with respect to the deposition rate detection element 33 is excellent. Can be detected. In addition, the first control valve and the second control valve 17A, 17B are feedback-controlled based on the detected value to control the deposition rate of the first deposition material and the second deposition material on the substrate 12 with excellent precision. Can be. In addition, the deposition rate of the first deposition material and the second deposition material to the deposition rate detection element 33 is increased, so that the film thickness becomes thick in a short time, so that the lifetime of the deposition rate detection element 33 is not extremely shortened. .

In addition, in the deposition rate adjusting mechanism 34, the element adjusting device 36 is operated to move the deposition rate detecting element 33 close to and away from the discharge port 32a of the detection nozzle 32, thereby discharging the discharge port 32a. Since the deposition rate detecting device 33 is adjusted to an appropriate distance, the deposition rate with respect to the deposition rate detecting device 33 can be detected with excellent accuracy.

In addition, when the deposition rate of the deposition material on the substrate 12 is changed, the deposition control apparatus 21 uses the discharge port 32a of the detection nozzle 32 and the deposition rate detection element 33 based on equation (2). By calculating the distance between the < RTI ID = 0.0 >) < / RTI >

Example 2

The deposition rate adjusting mechanism 34 in the first embodiment is an element adjusting device 36 which fixes the discharge port 32a of the detection nozzle 32 and approaches and spaces the deposition rate detecting element 33. In the second embodiment, as shown in Fig. 4, the deposition rate adjusting device 51 is fixed to the deposition rate detecting element 53 and adjusts the position of the discharge port 55a of the detection nozzle 55. It is installed. Here, the same members as in Example 1 are denoted by the same reference numerals and description thereof will be omitted.

The vapor deposition rate adjusting mechanism 51 according to the second embodiment is a spreading-out / retracting system provided to slide in a guide tube 54 provided through the side wall 14s of one side in the dispersion container 14. The detection nozzle 55, the deposition rate detection element (crystal oscillator) 53 fixed through the element holder 52 at a position opposite to the detection nozzle 55, and the detection nozzle 55. And the nozzle adjusting device 56 which can adjust the distance L between the deposition rate detecting element 53 and the discharge port 55a by sliding the discharge port 55a.

The nozzle adjusting device 56 includes, for example, a linear moving device made of a rack and pinion mechanism, which is connected to the detection nozzle 55 via a connecting member 57 and is detected. The rack member 58 guided to move in a direction parallel to the axis center of the nozzle 55, the pinion 59 engaged with the rack teeth of the rack member 58, and the pinion 58 are driven in reverse rotation. The position of the discharge port 55a is detected from the rotation motor and the rotation angle of the adjustment motor 60 which can adjust the position of the discharge port 55a by advancing and retracting the detection nozzle 55. A rotary encoder (nozzle position detector) 61 capable of being provided is provided.

According to the configuration of the second embodiment, the nozzle adjusting device 56 is operated in response to the deposition rate with respect to the substrate 12, so that the discharge port 55a of the detection nozzle 55 is connected to the deposition rate detection element 53. By adjusting the distance (L) between the ejection opening 55a and the deposition rate detecting element 53 by approaching and away from each other, the deposition rate of the deposition material with respect to the deposition rate detecting element 53 can be detected with excellent accuracy. It can be done in politics. As a result, the influence of noise on the detection signal is less, and the lifetime of the deposition rate detection element 53 is not shortened.

Further, the deposition control apparatus 21 calculates the distance L between the discharge port 55a of the detection nozzle 55 and the deposition rate detecting element 53 based on equation (2), and operates the nozzle adjusting device 56. As a result, the distance L between the discharge port 55a of the detection nozzle 55 and the deposition rate detection element 53 may be appropriately detected by the deposition rate detection element 53 so as to detect the deposition rate at an appropriate value with excellent accuracy. You can adjust the distance.

Example 3

In the third embodiment, the discharge port is moved in and out as in the second embodiment. However, as shown in FIG. 5, in the dispersion container 14, a flexible detection nozzle is formed on the side wall 14s of one side portion. 71 to penetrate the outlet 71a so that the outlet 71a can be moved in and out, and the detection nozzle 71 is expanded and contracted by the nozzle adjusting device 56 constituted by a linear movement device made of a rack and pinion mechanism. By moving 71a, the distance L between the discharge port 71a and the deposition rate detecting element 53 can be adjusted, and the nozzle adjusting device 56 having the same structure is provided. Here, the same members as in Example 2 are denoted by the same reference numerals and description thereof will be omitted.

According to Example 3, the same effect as Example 1 or Example 2 can be obtained.

In the first to third embodiments, the rack and pinion mechanism has been described as the linear movement device. However, the ball screw mechanism, the electric cylinder device, and the like can be used. have.

Claims (4)

In the deposition chamber maintained in a vacuum state, a dispersion container including a plurality of deposition nozzles and a deposition material are disposed to face each other. In a vapor deposition apparatus in which a material inlet pipe having a control valve is connected to the dispersion vessel from an evaporation cell for evaporating vapor deposition material,
A detection nozzle is installed through the dispersion container, and a deposition rate detection device for detecting a deposition rate of the deposition material discharged from the detection nozzle is detected by the deposition nozzle. Disposed opposite the nozzle,
A deposition rate adjusting mechanism for moving at least one of the discharge port of the detection nozzle and at least one of the deposition rate detecting elements with respect to the other; ) Is installed
Deposition apparatus characterized by.
The method of claim 1,
The deposition rate adjusting mechanism includes an element adjusting device for moving the deposition rate detecting element to approach and separate the fixed detection nozzle,
In response to the deposition rate of the deposition material, the device adjusting device is operated to adjust the distance between the discharge port of the detection nozzle and the deposition rate detecting device, and based on the detection signal of the deposition rate detecting device. To install a deposition control device that operates a control valve.
Deposition apparatus characterized by.
The method of claim 1,
The deposition rate adjusting mechanism is configured to move the detection nozzle forward, backward, or stretch, and to move the discharge nozzle toward or away from the deposition speed detection device by moving the detection nozzle forward, backward, or stretch. Equipped with a nozzle adjusting device,
In response to the deposition rate of the deposition material, the nozzle adjusting device is operated to adjust the distance between the discharge port of the detection nozzle and the deposition rate detecting element, and the control is performed by the detection signal of the deposition rate detecting element. To install a deposition control device that operates the valve.
Deposition apparatus characterized by.
The method according to claim 2 or 3,
Deposition control device,
Deposition rate: Q (Å / sec), the distance between the discharge port of the detection nozzle and the deposition rate detection element: L (mm), coefficient for the deposition rate: k,
Q (L) = k (1 / L ² ). … Based on equation (1),
And a distance between the discharge port of the detection nozzle and the deposition rate detecting element: L, and to operate the element adjusting device or the nozzle adjusting device.

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