KR20120005887A - Method for preparing silica anti-reflection coating and silicon solar cell using the same - Google Patents

Abstract

PURPOSE: A method for manufacturing a silica antireflection layer and a silicon solar cell using the same are provided to improve a short current density by decreasing a surface reflectivity of the solar cell. CONSTITUTION: Aqueous coating solutions including a silica precursor and a dopant precursor are coated on a semiconductor substrate(100). A dopant containing silica layer(200) is formed by a sol-gel method. The dopant containing silica layer is thermally processed under an air or oxygen containing gas atmosphere. An emitter layer(110) is formed by a p-n junction through the diffusion of a dopant. A spherical silica particle layer is formed on the semiconductor substrate.

Description

METHODS FOR PREPARING SILICA ANTI-REFLECTION COATING AND SILICON SOLAR CELL USING THE SAME

The present invention relates to a method for manufacturing a silica antireflection film and a silicon solar cell using the same, and more particularly, by a surface texturing treatment, a silica antireflection film formation, and a pn junction formation by a simple process using a sol-gel method. The present invention relates to a method for producing a silica antireflection film capable of simultaneously forming an emitter layer and a silicon solar cell using the same.

In general, solar cells generate electron and hole pairs inside the semiconductor of the solar cell by light from the outside, and electrons move to the n-type semiconductor by the electric field generated by the pair of electrons and holes at the pn junction. Produces power by moving to p-type semiconductors. In order to increase the efficiency of such a solar cell, it is very important to maximize the number of photons reaching the active layer in the solar cell and to minimize the loss due to reflection of the cell surface.

In general, to reduce the reflectance of light on the outer surface of the solar cell to form a texture (texture) or anti-reflective coating is performed. Surface textures use photolithography and etching solutions as chemical methods, and photolithography is more expensive and uses more etching solutions. However, after using the etching solution, a long and complicated cleaning process is required and it is not effective in terms of manufacturing price and product yield. The anti-reflection film is formed by a deposition method such as vacuum deposition, sputtering, and plasma chemical vapor deposition (PECVD), most of which are difficult to mass-produce low-cost, high-efficiency solar cells due to an increase in initial investment and operating costs due to expensive vacuum equipment.

Therefore, there is an urgent need for a new technology that can implement a silica antireflection film in a simpler and cheaper way.

In order to solve the above problems, the present application, the silica which can simultaneously perform the surface texturing treatment and the formation of the emitter layer by the silica anti-reflection film formation and pn junction formation by a simple process using a sol-gel method The present invention provides a method of manufacturing an anti-reflection film and a silicon solar cell using the same.

However, the problem to be solved by the present application is not limited to the above-mentioned problem, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

In order to achieve the above object, the first aspect of the present application, the dopant- by a sol-gel method by liquid-coating an aqueous coating liquid containing a silica (SiO ₂ ) precursor and a dopant precursor on a semiconductor substrate Forming a containing silica layer and heat-treating the dopant-containing silica layer in an air or oxygen-containing gas atmosphere to form an emitter layer by forming a pn junction by diffusion of the dopant and simultaneously forming a spherical silica particle layer on the semiconductor substrate. And forming, wherein the spherical silica particle layer serves as an antireflection film and at the same time provides a surface texturing effect.

In an exemplary embodiment, the semiconductor substrate may be a p-type silicon substrate, the dopant may be an n-type dopant, and the emitter layer may be an n-type doped layer, but is not limited thereto.

In an exemplary embodiment, the n-type dopant may use a periodic table group 5 element, and may include, for example, phosphorus (P = phosphorous), arsenic (As), or antimony (Sb), but is not limited thereto. It doesn't happen.

In an exemplary embodiment, the silica precursor may be an organosilane compound, but is not limited thereto. For example, it is possible to use an alkoxysilane (alkoxysilanes), as the silica precursor, as examples thereof, C _{1 ~ 6} - there may be mentioned alkoxysilanes. Specific examples of such alkoxysilanes include those selected from the group consisting of tetramethoxysilane, tetraethoxysilane, tetrabutoxysilane, tetrapropoxysilane, and combinations thereof. But it is not limited thereto.

In an exemplary embodiment, the silica precursor may further include a catalyst and an organic solvent, but is not limited thereto. For example, the catalyst may be an acid or a base catalyst, but is not limited thereto.

In an exemplary embodiment, the dopant precursor may be a phosphorus (P) -containing compound, an arsenic (As) -containing compound, or an antimony (Sb) -containing compound, but is not limited thereto.

In an exemplary embodiment, the dopant precursor may further include an organic binder and an organic solvent, but is not limited thereto. For example, the organic binder may be ethyl cellulose, polyvinylpyrrolidone polyvinyplyrrolidone, nylon-6 (nylon-6), nitrocellulose, gelatin, polyvinyl butyral (polyvinylbutyral), polyamide resin, thixoton, starch, polyether-polyols, polyetherurea-polyurethane, cellulose It may be selected from the group consisting of cellulose derivatives and combinations thereof, but is not limited thereto.For example, the catalyst may be an acid or a base catalyst, but is not limited thereto.

For example, the organic solvent is N-methylpyrrolidone (NMP), ethylene glycol butyl ether, propylene carbonate, ethylene glycol, N-methyl-2-pyridone ( N-methyl-2-pyridone, ethylene glycol monoacetate, diethyleneglycol, diethylene glycol acetate, tetraethylene glycol, propylene glycol , Propylene glycol monomethyl ether. Trimethylene glycol, glyceryl diacetate, hexylene glycol, dipropyl glycol, oxylene glycol, 1, 2, 6-hexanetriol (1, 2, 6-hexanetriol), glycerin (glycerine) and may be selected from the group consisting of a combination thereof, but is not limited thereto.

In an exemplary embodiment, the liquid coating may be performed by spin coating, dip coating, or spray coating, but is not limited thereto.

In an exemplary embodiment, forming the dopant-containing silica layer may include drying at a temperature of 80 ° C. or higher, for example, 80 ° C. to 150 ° C. after the liquid phase application of the coating liquid, but is not limited thereto. It doesn't happen.

In an exemplary embodiment, the heat treatment may be performed at 500 to 1500 ° C., but is not limited thereto.

In an exemplary embodiment, the heat treatment may be performed at 1 torr to 760 torr, but is not limited thereto.

In addition, the second aspect of the present application provides a silicon solar cell comprising a silica anti-reflection film prepared according to the method described above.

According to the above-mentioned problem solving means of the present application, by the present application, it is possible to simultaneously perform the surface texturing treatment and the formation of the emitter layer by the silica anti-reflection film formation and pn junction formation by a simple process using the sol-gel method It is possible to provide a method of manufacturing a silica antireflection film and a silicon solar cell using the same. Silica anti-reflection film prepared by the method according to the present application can achieve the effect of improving the short circuit current density by reducing the surface reflectance of the solar cell and at the same time can perform a passivation function can be expected to improve the conversion efficiency. In addition, according to the aforementioned problem solving means of the present application, the process can be simplified by simultaneously forming a silica anti-reflection film and an emitter layer having a surface texture effect in a single process in a long process without using expensive vacuum equipment. The investment cost and manufacturing cost can be reduced, and thus, the manufacturing process is simple and expensive large vacuum device is not required, which can greatly reduce the process cost, thereby contributing to the wide practical use of solar cells by pursuing low cost and high efficiency. In addition, according to the aforementioned problem solving means of the present application, it is possible to form a silica anti-reflection film in a simple and inexpensive method in the photoelectric device or optical device that reflectance is essential in addition to the solar cell.

1 is a schematic view showing a method of manufacturing a silica anti-reflection film according to an embodiment of the present application.
2 is a flow chart schematically showing a cross-section of the device formed in each process of the silica anti-reflection film production process according to an embodiment of the present application.
3 is a cross-sectional view of a solar cell including a silica anti-reflection film prepared according to an embodiment of the present application.
Figure 4 is a FE-SEM picture of the silica antireflection film prepared in accordance with an embodiment of the present application, (a) surface SEM picture of the untextured single crystal silicon wafer, (b) surface SEM picture of the spherical silica film heat-treated at 1000 ℃ , (c) Tilt SEM image of spherical silica particles heat treated at 1000 ° C.
FIG. 5 is a Fourier transform-infrared spectroscopy (FT-IR) spectrum of a silica anti-reflection film prepared according to one embodiment of the present application.
FIG. 6 is a spectrum showing light reflectance of a silica anti-reflection film prepared by using an ultraviolet / visible light (UV / VIS) spectrophotometer.
Figure 7 is a graph of the current-voltage characteristics of the anti-reflection film of silica prepared according to an embodiment of the present application.

DETAILED DESCRIPTION Hereinafter, embodiments and examples of the present disclosure will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present disclosure. However, the present disclosure may be embodied in many different forms and should not be construed as limited to the embodiments and examples set forth herein. In the description with reference to the accompanying drawings, the same or corresponding components will be given the same reference numerals and redundant description thereof will be omitted.

Throughout this specification, when a part is said to "include" a certain component, it means that it can further include other components, without excluding the other components unless otherwise stated. As used throughout this specification, the term “step of” or “step of” does not mean “step for.” The terms “about”, “substantially”, etc., as used throughout this specification When manufacturing and material tolerances inherent in the stated meanings are presented, they are used at or in the vicinity of those figures and unfairly exploit the disclosure by which accurate or absolute figures are mentioned to aid the understanding herein. It is used to prevent that.

1 and 2 are schematic diagrams schematically showing a manufacturing process according to an embodiment of the present application, and a cross-sectional view of the device in each manufacturing process.

According to an aspect of the present disclosure, a method of manufacturing a silica antireflection film may include preparing a semiconductor substrate; Applying an aqueous coating liquid containing a silica (SiO ₂ ) precursor and a dopant precursor in a liquid phase onto the semiconductor substrate to form a dopant-containing silica layer; And heat treating the dopant-containing silica layer in an air or oxygen-containing gas atmosphere to simultaneously form an emitter layer by diffusion of the dopant and a spherical silica antireflection film formed by sintering. The spherical silica particles may have a surface texture effect.

As the semiconductor substrate 100, a variety of conventional semiconductor substrates 100 may be used, but a p-type silicon substrate generally used for manufacturing a silicon solar cell may be used. It is also possible to use an n-type semiconductor substrate, in which case it is possible to form a p-n junction by using the dopant as a p-type dopant.

The preparing of the semiconductor substrate 100 may include pretreatment for etching and removing impurities of the prepared semiconductor substrate 100.

In order to form a silica antireflection film containing a dopant on the prepared upper surface of the semiconductor substrate 100, a coating liquid (sol) containing a silica (SiO ₂ ) precursor and a dopant precursor is applied in a liquid state. Through this step, a dopant-containing silica layer 200 may be formed on the semiconductor thin film.

The dopant may be used as a material capable of being diffused into the semiconductor substrate 100 to form a pn junction surface. For example, when the semiconductor substrate 100 is a p-type silicon substrate, the dopant may be an n-type dopant, and the n-type doped layer may be the emitter layer 110 according to the diffusion of the n-type dopant. Here, phosphorus (P), arsenic (As), antimony (Ab), or the like may be used as a dopant for doping the n-type dopant, for example, phosphoryl oxytrichloride (POCl ₃ ), phosphoric acid (phosphoric acid). , H ₃ PO ₄ ), may contain a compound containing a pentavalent element, such as diphosphorous pentaoxide (P ₂ O ₅ ), but is not limited thereto, and dopants commonly used for semiconductor doping may be used. Can be. Forming an n-type doped layer on the surface of the silicon wafer through a phosphorus diffusion process may use methods known to those skilled in the art. For example, vapor phase diffusion may be used at a temperature of 500 ° C. or higher, or a method of applying a phosphorus containing solution to the wafer surface and annealing at a high temperature may be used.

Meanwhile, when the semiconductor substrate 100 is an n-type silicon substrate, the dopant may be a p-type dopant, and the p-type doping layer may be an emitter layer according to the diffusion of the p-type dopant. As the dopant for doping the p-type dopant, boron (B), gallium (Ga), indium (In) and the like may be used. For example, boric acid (B (OH) ₃ ), diboron trioxide (diboron) compounds containing trivalent elements such as trioxide, B ₂ O ₃ ).

The aqueous coating liquid may be prepared by mixing a silica precursor, a dopant precursor, and an aqueous solvent. The silica precursor may be an organosilane compound. For example, it is possible to use an alkoxysilane (alkoxysilanes), as the silica precursor, as examples thereof, C _{1 ~ 6} - there may be mentioned alkoxysilanes. Specific examples of such alkoxysilanes include those selected from the group consisting of tetramethoxysilane, tetraethoxysilane, tetrabutoxysilane, tetrapropoxysilane, and combinations thereof. But it is not limited thereto.

The dopant precursor may vary depending on the type of dopant to be used. For example, it may be a phosphorous-containing compound, an arsenic (As) -containing compound, or an antimony (Sb) -containing compound. If phosphorus is to be used as a dopant, a phosphorus containing compound may be used as a precursor. For example, POCl ₃ may be used as a precursor, but is not limited thereto, and various phosphorus-containing compounds may be used. The coating liquid may further include an alcohol and an acid for a smooth reaction.

In addition, in order to ensure viscosity and printability, the dopant precursor may further include an organic binder. For example, ethyl cellulose, polyvinyl pyrrolidone polyvinyplyrrolidone, nylon-6 (nylon-6), nitrocellulose, gelatin, polyvinylbutyral, polyvinylbutyral Polyamide resin, thixoton, starch, polyether-polyols, polyetherurea-polyurethane, cellulose derivative ) And a polymer binder capable of adjusting the viscosity to enable liquid coating as selected from the group consisting of a combination thereof may be provided as a thickening agent.

Due to the dopant precursor composed of such a composition and simultaneously performing the role of the emitter layer 110 and the anti-reflection film 200, the pn junction is formed at the same time, the manufacturing process is simplified. Comparing an existing etching process such as a photolithography process, a dry or wet etching process, and a process using a silica and a dopant precursor according to the present embodiment are as follows. That is, the etching process using the silica and the dopant precursor according to the present embodiment does not require a process of forming a separate photoresist film or an etch stop layer and removing the remaining photoresist or etch stop layer after etching, thereby simplifying the process. In addition, in the conventional etching process, the amount of light exposed to the photoresist or the penetration rate of the etchant varies depending on the position, thereby obtaining a desired etching pattern. However, when using the silica and the dopant precursor according to the present embodiment, the desired portion Only dopants can be doped. In addition, when a caustic solution or the like is used to remove the etch stop layer, a problem occurs that the exposed surface is damaged. However, when the silica and the dopant precursors according to the present embodiment are used, a process of removing a separate etch stop layer is required. Not required. In addition, when the n-type doping layer and the p-type doping layer are formed by using a dry or wet process, a part of the semiconductor substrate is often exposed to high temperature, which may adversely affect the characteristics of the semiconductor substrate 100. When using the silica and the dopant precursor, surface damage of the semiconductor substrate 100 due to the high temperature is reduced.

According to one embodiment of the present application, the aqueous coating liquid is a precursor for forming silica (SiO ₂ ), alkoxysilanes such as tetraethoxysilane (TEOS), phosphoryl chloride (POCl ₃ ), and hydrochloric acid (HCl) as a source of phosphorus. ), Ethanol (C ₂ H ₅ OH) and distilled water can be mixed, and at this time can be prepared by continuously stirring at least 1 hour with a stirrer for a smooth reaction in solution.

The liquid coating is to apply a liquid coating liquid onto the semiconductor substrate without using a vacuum, and various coating methods known in the art may be used. For example, a silica anti-reflection film containing a dopant is formed by applying the coating liquid onto the semiconductor substrate by a spin coating, dip coating, spray coating, or the like method of the sol-gel method. Can be formed.

When coating on a semiconductor substrate by the liquid phase method using the spin coating, dip coating or spray coating, by controlling the spin speed and immersion time it can be deposited a thin film of several nm to several tens of nm thickness suitable for the anti-reflection film for solar cells. In addition, the thickness of the formed film can be adjusted even if the mixing ratio is adjusted during the preparation of the coating liquid. When the spin coating is performed, the coating may be performed in a range of about 10 seconds to 1 minute at a spin speed of 1000 rpm to 8000 rpm at room temperature.

It may further include a drying step for drying the applied solution after the liquid coating, for example, the substrate to which the coating liquid is applied may be dried in an oven or hot plate at 80 ° C. or higher for at least 10 minutes, and the like. It may include the step of drying using a drying means.

Subsequently, the dopant-containing silica layer formed by the liquid coating is heat-treated under an air atmosphere. By performing a heat treatment under an air atmosphere, the dopant may diffuse into the semiconductor substrate to form the emitter layer 110, and the silica may be formed of spherical particles to form a spherical silica anti-reflection film 200 on the emitter layer 110. have.

The temperature of the heat treatment may be performed at a temperature of 500 to 1500 ℃, the process pressure may be performed at 1 torr to normal pressure (760 torr).

According to an embodiment of the present application, to form a phosphorus-added silica film as the n-type doped layer 300 on the silicon substrate (air) In an atmosphere furnace, phosphorus diffusion and sintering may be simultaneously performed under conditions of a process pressure of 1 torr to 760 torr and a heat treatment process temperature of 500 to 1500 ° C.

A device having a pn junction surface and a silica antireflection film manufactured by the above method may include a semiconductor substrate 100, an emitter layer 110 disposed on an upper surface of the semiconductor substrate, and a silica antireflection film disposed on an upper surface of the emitter layer 110. And a pn junction surface between the semiconductor substrate 100 and the emitter layer 110.

On the other hand, in order to manufacture the solar cell, after the above-described step, the step of connecting the rear electrode 300 and the front electrode 500 of the solar cell may be added. The connection of the rear electrode 300 and the front electrode 500 may be performed through a conventional method known in the art.

Figure 3 shows a cross section of a silicon solar cell device manufactured according to an embodiment of the present application. According to FIG. 3, the manufactured silicon solar cell includes a rear electrode 300, a rear electric field layer 400, a semiconductor substrate 100, an emitter layer 110, a silica anti-reflection film 200, and a front electrode 500. It may have a stacked structure.

According to the exemplary embodiment of the present disclosure, the rear electrode 300 may be formed by screen printing aluminum paste on the rear surface of the semiconductor substrate 100 and then heat-treating the back electrode 300 to be electrically connected to the semiconductor substrate. Can be. At this time, aluminum may be diffused to a rear surface of the semiconductor substrate 100 by a heat treatment to form a p ⁺ type rear electric field layer 400. The back field layer 400 may serve to prevent the photoexcited electrons from moving to the back of the semiconductor substrate.

According to one embodiment of the present application, the connection of the front electrode 500 may be formed by applying a conductive paste containing silver (Ag) and the like in an arbitrary pattern and then heat treatment. In this case, the anti-reflection film 200 may be partially removed through heat treatment, and the front electrode 500 may be electrically connected to the emitter layer 110.

However, the method of connecting the back electrode and the front electrode is not limited to the above embodiments and may be performed through various methods known in the art.

According to one embodiment of the present application, the manufactured solar cell includes a p-type silicon substrate, an n-type doped layer by diffusion of phosphorus located on the upper surface of the p-type silicon substrate, and a silica anti-reflection film located on the upper surface of the n-type doped layer can do.

As described above, spherical silica particles are formed by heat treatment under an air or oxygen atmosphere after liquid coating using a coating liquid containing a dopant and silica, thereby producing surface texture effects. As such, by texturing the upper surface of the substrate, light is trapped inside the solar cell through a plurality of incidences and reflections, thereby improving absorption of light, thereby improving efficiency of the solar cell.

The present application implements a silica anti-reflection film that can perform a protective film function while reducing the reflectance in a simpler method, and at the same time, the phosphor can diffuse to form a pn junction to manufacture a solar cell, thereby greatly reducing the process cost. .

Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited thereto.

[ Example ]

Tetraethoxysilane Reagent Grade Si (OC ₂ H ₅ ) ₄ (TEOS) (98%, Aldrich), Diphenyl Phosphoryl Chloride (C ₆ H ₅ O) ₂ POCl , (99%, Aldrich), ammonia water NH ₄ OH (29%, JTBaker), ethanol anhydrous C ₂ H ₅ OH (EtOH) (Fisher Scientific) and distilled water were prepared. A solution of TEOS in ethanol was prepared and hydrolyzed in the presence of ammonia water and distilled water. The molar ratio of TEOS: EtOH: NH ₄ OH: H ₂ O was 1: 4: 0.01: 2. The obtained solution was mixed with a diphenylphosphoryl (1: 6) solution in ethanol and stirred at room temperature for 90 minutes. The untextured single crystal silicon wafer was applied from a prepared solution containing phosphorus and spin coated for 30 seconds at a speed of 5000 to 8000 rpm. The spin coated film was pre-baked for 10 minutes at a temperature of 130 ° C. on a hotplate. Subsequently, the silica film was subjected to heat treatment for 1 hour at a temperature of 500 to 1000 ° C. in an air atmosphere in a furnace. By carrying out the heat treatment under an air atmosphere, phosphorus diffused to the silicon substrate to form an emitter layer, and the silica was sintered to produce an antireflection film with spherical silica particles. Field emission electron scanning microscopy (FE-SEM) was used to examine the surface morphology of spherical silica films to confirm the formation of surface texturing. (A) is a SEM image of the surface of an untextured single crystal silicon wafer, (b) is a SEM image of the surface of a spherical silica film heat-treated at 1000 ° C, and (c) is an enlarged SEM image of (b) above. A tilted SEM picture of the spherical silica particles heat treated at 1000 ° C. is shown. As shown in (a) to (c) of FIG. 4, the size of the spherical silica particles is about 50 to 100 nm, and the spherical silica particles are uniformly distributed. It can be seen that the appropriate spherical silica particles have a surface basic structural effect of providing an antireflection film and minimizing reflection.

5 is an FT-IR spectrum of the silica anti-reflection film prepared as described above. As shown in FIG. 5, the strongest peak at about 1080 cm ^{−1 corresponds} to the Si—O—Si stretching mode. This peak is due to the condensation reaction of oxides with the continuous formation of inorganic polymers of hydroxyl groups and Si—O—Si bonds. At about 800 cm ⁻¹ and 1000 to 1300 cm ⁻¹ corresponding to Si-O stretching, the intensity of the peak increased and shifted to higher wavenumber as the annealing temperature increased.

FIG. 6 is a spectrum showing light reflectance of a silica antireflection film measured with a UV / VIS spectrophotometer. FIG. It was measured at room temperature in the wavelength range of 400 nm to 1200 nm. As shown in FIG. 6, the heat-treated silica antireflection film at 1000 ° C. has the lowest reflectance of 9% at 650 nm. The optical properties of such antireflective coatings can be improved by the heat treatment temperature with optimum reflective properties because of better matching and thickness of the refractive index between the silica antireflective film and the silicon wafer.

7 is a graph illustrating current-voltage characteristics of a semiconductor substrate on which the anti-reflection film is formed. As shown in FIG. 7, the formation of the pn junction surface was confirmed by a current-voltage test after heat treatment at 1000 ° C. in an air atmosphere.

Although described above with reference to the embodiments and examples of the present application, those skilled in the art may vary the present invention without departing from the spirit and scope of the invention described in the claims below. It will be understood that modifications and changes can be made.

100: semiconductor substrate
110: emitter layer
200: silica antireflection film
300: rear electrode
400: rear electric layer
500: front electrode

Claims (9)

Applying an aqueous coating liquid containing a silica (SiO ₂ ) precursor and a dopant precursor onto a semiconductor substrate in a liquid phase to form a dopant-containing silica layer by a sol-gel method;
Thermally treating the dopant-containing silica layer in an air or oxygen-containing gas atmosphere to form an emitter layer by forming a pn junction by diffusion of the dopant and simultaneously forming a spherical silica particle layer on the semiconductor substrate:
Including;
The spherical silica particle layer acts as an antireflection film and at the same time provides a surface texturing effect,
A method for producing a silica antireflection film comprising a.
The method of claim 1,
Wherein the semiconductor substrate is a p-type silicon substrate, the dopant is an n-type dopant, and the emitter layer is an n-type doping layer.
The method of claim 2,
The n-type dopant comprises a phosphorus (P), arsenic (As) or antimony (Sb), the manufacturing method of the silica anti-reflection film.
The method of claim 1,
The silica precursor comprises C _1-6 -alkoxysilanes (alkoxysilanes), a method for producing a silica anti-reflection film.
The method of claim 1,
Wherein the dopant precursor is a phosphorus (P) -containing compound, an arsenic (As) -containing compound, or an antimony (Sb) -containing compound.
The method of claim 1,
Wherein the liquid coating is performed by spin coating, dip coating or spray coating.
The method of claim 1,
The heat treatment is carried out at 500 to 1500 ° C, a method for producing a silica anti-reflection film.
The method of claim 1,
The heat treatment is carried out at 1 torr to 760 torr, the manufacturing method of the silica anti-reflection film.
A silicon solar cell comprising a silica anti-reflection film prepared according to any one of claims 1 to 8.

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