KR20110140024A - Apparatus for growing gallium nitride based epitaxial layer and method of growing thereof - Google Patents

Apparatus for growing gallium nitride based epitaxial layer and method of growing thereof Download PDF

Info

Publication number
KR20110140024A
KR20110140024A KR1020100060193A KR20100060193A KR20110140024A KR 20110140024 A KR20110140024 A KR 20110140024A KR 1020100060193 A KR1020100060193 A KR 1020100060193A KR 20100060193 A KR20100060193 A KR 20100060193A KR 20110140024 A KR20110140024 A KR 20110140024A
Authority
KR
South Korea
Prior art keywords
gas
type impurity
gallium nitride
activated
plasma generator
Prior art date
Application number
KR1020100060193A
Other languages
Korean (ko)
Inventor
김법진
Original Assignee
서울옵토디바이스주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울옵토디바이스주식회사 filed Critical 서울옵토디바이스주식회사
Priority to KR1020100060193A priority Critical patent/KR20110140024A/en
Publication of KR20110140024A publication Critical patent/KR20110140024A/en

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A gallium nitride based epitaxial growth apparatus and a growth method are disclosed. The apparatus includes a growth chamber and a plasma generator. A P-type impurity source gas is injected into the plasma generator from the P-type impurity source, and the plasma generator generates a plasma to generate an activated P-type impurity gas. On the other hand, the P-type impurity gas activated from the plasma generating device together with the reaction gases and the carrier gas is injected into the growth chamber. Since the P-type impurity gas activated from the plasma generator is injected into the growth chamber, the P-type gallium nitride based semiconductor layer doped with the activated P-type impurity in the growth chamber can be grown on the substrate. Accordingly, the ionization energy of the P-type impurity in the P-type gallium nitride based semiconductor layer can be lowered.

Description

Gallium nitride based epilayer growth apparatus and growth method {APPARATUS FOR GROWING GALLIUM NITRIDE BASED EPITAXIAL LAYER AND METHOD OF GROWING THEREOF}

The present invention relates to a gallium nitride based epitaxial growth apparatus and a growth method, and more particularly, to a P-type gallium nitride based epitaxial growth apparatus and a growth method.

A semiconductor light emitting diode or a laser diode is a light emitting device that emits light by recombination of electrons and holes using an N-type semiconductor and a P-type semiconductor. Gallium nitride-based compound semiconductors are well known as light emitting devices for emitting blue light.

Chemical vapor deposition, for example, metal organic chemical vapor deposition (MOCVD), is generally used as a method of growing a gallium nitride-based compound semiconductor layer, that is, a gallium nitride-based epi layer. For example, US Patent Publication No. US2010 / 0112216A1 illustrates a technique for growing a compound semiconductor layer using such chemical vapor deposition and also illustrates a compound semiconductor layer growth apparatus.

On the other hand, Si as an N-type impurity and Mg as a P-type impurity are mainly used in gallium nitride series compound semiconductor layers. Generally SiH4 is used as a source of Si, and Cp2Mg is mainly used as a source of Mg.

For example, to grow a P-type GaN layer, a source gas of Ga (e.g. TMGa), a source gas of N (e.g. NH3), and a source gas of Mg (e.g. Cp2Mg) along with a carrier gas are added to the growth chamber. The GaN layer doped with Mg is grown by chemical reaction on the substrate heated to a high temperature. Each source gas may be decomposed by pyrolysis on a substrate heated to a high temperature, for example, 700 to 1100 ° C., and the decomposed gases may react with each other to grow a GaN epi layer.

However, when Mg is doped through the MOCVD process using the thermal energy inside the growth chamber, that is, the thermal energy of the substrate, the ionization energy (activation energy) of Mg in the P-type GaN is quite high. In bulk P-type GaN grown using MOCVD, the ionization energy of Mg has a high ionization energy of 0.18 to 0.19 eV. The greater the ionization energy, the more difficult the formation of holes, the slower the drift velocity and the higher the resistivity of the P-type GaN, the higher the driving voltage.

United States Patent Application Publication US2010 / 0112216A1

The problem to be solved by the present invention is to provide a P-type gallium nitride-based epitaxial growth apparatus and a growth method that can reduce the ionization energy of the P-type impurities.

Another object of the present invention is to provide a gallium nitride based epitaxial growth apparatus and a growth method capable of lowering the resistivity of a gallium nitride based epilayer.

In order to solve the said subject, 1 aspect of this invention provides a gallium nitride system epitaxial growth apparatus. The apparatus includes a plasma generator for implanting a P-type impurity source gas generated from a P-type impurity source and generating a plasma to generate an activated P-type impurity gas; And a growth chamber in which reactive gases and a carrier gas are injected, and a P-type impurity gas activated from the plasma generator is injected. Since the activated P-type impurity gas is injected from the plasma generator, the P-type gallium nitride based semiconductor layer doped with the activated P-type impurity can be grown on the substrate. Therefore, the ionization energy of the P-type impurity in the P-type gallium nitride-based semiconductor layer can be lowered, thereby lowering the specific resistance of the P-type gallium nitride-based semiconductor layer.

The P-type impurity source may be Cp2Mg. In addition, the plasma generating apparatus may decompose the P-type impurity source gas, and thus, for example, activated Mg gas may be generated.

Meanwhile, the apparatus may further include a carrier gas for transporting the P-type impurity source gas, and the carrier gas is preferably nitrogen (N 2).

The apparatus may further comprise a push gas flow rate controller for controlling the flow rate of the P-type impurity gas generated from the plasma generator. The push gas flow controller is connected to a conduit between the plasma generator and the growth chamber to control the flow rate of the P-type impurity gas injected from the plasma generator into the growth chamber.

Another aspect of the present invention provides a gallium nitride based epilayer growth method. The method includes injecting a P-type impurity source gas into a plasma generator to generate a plasma to generate an activated P-type impurity gas, a reaction gas containing a source gas of group III metal and a source gas of nitrogen, a carrier gas and And implanting the activated P-type impurity gas into the growth chamber to grow a P-type gallium nitride based semiconductor layer on the substrate in the growth chamber.

The P-type impurity source may be Cp2Mg. In addition, the P-type impurity source gas may be decomposed in the plasma generator. Thus, for example, activated Mg gas can be produced.

The P-type impurity source gas may be delivered to the plasma generator by a carrier gas. Here, the cage gas preferably contains no hydrogen, and preferably nitrogen (N 2).

Meanwhile, the flow rate of the P-type impurity gas generated from the plasma generator may be controlled by the push gas flow controller. The push gas flow controller may be connected to a conduit between the plasma generator and the growth chamber.

According to the present invention, unlike the conventional P-type gallium nitride-based epilayer growth method of doping P-type impurities by thermal decomposition by thermal energy in the growth chamber, the P-type impurity gas is activated by using a plasma generating apparatus. Doping Therefore, the total energy inside the growth chamber is increased, and the energy of the P-type impurity in the P-type gallium nitride based semiconductor layer also exists in a more activated state after the chemical reaction is completed. As a result, the ionization energy of the P-type impurity is reduced and the driving voltage is reduced.

1 is a schematic block diagram illustrating an epitaxial growth apparatus according to an embodiment of the present invention.
2 is a cross-sectional view illustrating an epitaxial growth method according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided as examples to ensure that the spirit of the present invention to those skilled in the art will fully convey. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. And, in the drawings, the width, length, thickness, etc. of the components may be exaggerated for convenience. Like numbers refer to like elements throughout.

1 is a schematic block diagram illustrating an epitaxial growth apparatus according to an embodiment of the present invention.

Referring to FIG. 1, the epitaxial growth apparatus includes a plasma generator 100, a growth chamber 200, a carrier gas 110, a P-type impurity source 120, reactive gases 220 and 230, and a carrier gas ( 210). The apparatus may also include a push gas flow controller 130.

The carrier gas 110 carries the P-type impurity source gas to the plasma generator 100. The carrier gas 110 may be nitrogen (N 2). In order to prevent the carrier gas 110 and Cp 2 Mg or Mg from reacting, it is preferable not to include hydrogen (H 2) in the carrier gas 110.

The P-type impurity source 120 may be, for example, Cp2Mg. Cp2Mg is contained in the vessel, and Cp2Mg gas is generated by bubbling. The carrier gas 110 may be used as a bubbling gas of Cp2Mg, and may also carry a Cp2Mg gas generated by bubbling.

The plasma generator 100 may be, for example, an inductively coupled plasma (ICP) device or a capacitively coupled plasma (CCP) device. The plasma generator 100 generates a plasma to activate the injected P-type impurity source gas. The P-type impurity source gas may be activated by the plasma generator 100 to generate an activated P-type impurity gas. For example, when Cp2Mg is used as the P-type impurity source gas, Cp2Mg may be decomposed by the plasma generator 100, and thus, an activated P-type impurity gas such as Mg gas may be generated. The activated P-type impurity gas is not limited to Mg gas, and may include activated Cp2Mg. The activated P-type impurity gas is injected into the growth chamber 200 by the carrier gas 110.

On the other hand, the push gas flow controller 130 may be used to help the activated P-type impurity gas is injected into the growth chamber 200 and to control the flow rate of the P-type impurity gas. The push gas flow controller 130 is connected to a conduit between the plasma generator 100 and the growth chamber 200, and controls the flow rate of the P-type impurity gas by controlling the flow rate of the push gas, for example, nitrogen (N 2) gas. do.

The push gas flow controller 130 may be connected to the carrier gas 110, where the carrier gas 110 may be used as the push gas. The push gas flow controller 130 may be connected to a carrier gas other than the carrier gas 110 (including N 2), and another carrier gas may be used as the push gas.

On the other hand, the growth chamber 200 is a reaction chamber of chemical vapor deposition, for example, a metal organic chemical vapor deposition apparatus, an injection hole of the reaction gases 220 and 230 for growing a gallium nitride-based epilayer, an N-type impurity gas ( And an inlet for p-type impurity gas, and also an outlet for discharging the gas. In addition, the growth chamber 200 may have a disk-shaped substrate carrier on which a substrate may be placed, and the substrate carrier may rotate about a central axis. A substrate is placed on the substrate carrier, and the substrate can be heated to a growth temperature.

The reaction gases 220 and 230 may be carried into the growth chamber 200 by the carrier gas 210, and the P-type impurity gas may be carried into the growth chamber 200 by the carrier gas 110. The carrier gas 210 may be hydrogen or nitrogen, and the carrier gas 110 and the carrier gas 210 may use the same gas source.

The reaction gas 220 may be a source gas of a group III metal, for example, an alkyl group of a group III metal such as TMGa, TMIn, TMAl, and the reaction gas 230 may be a source gas of nitrogen, such as NH 3.

2 is a cross-sectional view illustrating an epitaxial growth method according to an embodiment of the present invention.

First, the substrate 21 is located on the substrate carrier in the growth chamber 200. A plurality of substrates 21 may be disposed on the carrier. The substrate 21 may be a single crystal substrate suitable for growing a gallium nitride based semiconductor layer such as sapphire, SiC, or spinel.

The N-type semiconductor layer 23 doped with N-type impurities is grown on the substrate 21 in the growth chamber 200. The N-type impurity may be Si, for example, and a source gas of Si, such as SiH 4, is injected into the growth chamber along with the reaction gases 220, 230 to dope the N-type impurity. A buffer layer (not shown) may be deposited before the N-type semiconductor layer 23 is grown.

The active layer 25 is grown on the N-type semiconductor layer 23. The active layer 25 may have a single quantum well structure or a multiple quantum well structure. The active layer 25 may be doped with N-type or P-type impurities, but may not be doped with impurities. In addition, only some of the active layers 25 may be doped with impurities.

The P-type semiconductor layer 27 is grown on the active layer 25. Hereinafter, the growth method of the P-type semiconductor layer 27 will be described in detail with reference to FIG. 1 again.

First, in order to grow the P-type semiconductor layer 27, a P-type impurity source gas is injected into the plasma generator 100 from the P-type impurity source 120. The P-type impurity source gas may be Cp2Mg and is generated from the Cp2Mg source by bubbling of the carrier gas 110. Subsequently, plasma is generated in the plasma generator 100 to activate the P-type impurity source gas. At this time, the P-type impurity source gas, such as Cp2Mg, may be decomposed, and thus an activated Mg gas may be generated.

P-type impurity gas activated by the plasma generator 100 is transferred into the growth chamber 200. In this case, the injection flow rate of the P-type impurity gas injected into the growth chamber 200 may be controlled by the push gas whose flow rate is controlled by the push gas flow controller 130.

On the other hand, the reaction chamber 220, which is the source gas of the group III metal, and the reaction gas 230, for example, NH 3, which is the source gas of the nitrogen (N), are transferred into the growth chamber 200 by the carrier gas 210. It is implanted into it, thereby growing a gallium nitride based P-type semiconductor layer 27 on the substrate 21 in the growth chamber 200, for example on the active layer 25.

According to this embodiment, the P-type impurity gas activated by the plasma generator 100 is injected into the growth chamber 200 and doped into the P-type semiconductor layer 27. Accordingly, P-type impurities such as Mg dopants, which are relatively activated in the P-type semiconductor layer 27, are generated, and as a result, P-type semiconductor layers having lower ionization energy of Mg dopants than conventional P-type semiconductor layers are formed. (27) can be grown.

21: substrate
23: N-type semiconductor layer
25: active layer
27: P-type semiconductor layer
100: plasma generator
110: carrier gas
120: P-type impurity source
130: push gas flow controller
200: growth chamber
210: carrier gas
220, 230: reaction gas

Claims (7)

A plasma generator for implanting a P-type impurity source gas generated from a P-type impurity source and generating a plasma to generate an activated P-type impurity gas; And
And a growth chamber into which reactive gases and a carrier gas are injected, and a P-type impurity gas activated from the plasma generating device is injected. The gallium nitride-based epitaxial growth apparatus according to claim 1, wherein the P-type impurity source is Cp2Mg. The gallium nitride-based epitaxial growth apparatus according to claim 1, wherein the plasma generator decomposes the P-type impurity source gas. The apparatus of claim 1, further comprising a carrier gas for transporting the P-type impurity source gas. The gallium nitride-based epitaxial growth apparatus according to claim 4, wherein the carrier gas is nitrogen (N2). The gallium nitride-based epi layer growth of claim 1, further comprising a push gas flow controller connected to a conduit between the plasma generator and the growth chamber to control a flow rate of the P-type impurity gas generated from the plasma generator. Device. Injecting the P-type impurity source gas into the plasma generator to generate a plasma to generate an activated P-type impurity gas,
Injecting a reactive gas containing a source gas of a Group III metal and a source gas of nitrogen, a carrier gas, and the activated P-type impurity gas into a growth chamber to grow a P-type gallium nitride based semiconductor layer on a substrate in the growth chamber. Gallium nitride-based epilayer growth method comprising.
KR1020100060193A 2010-06-24 2010-06-24 Apparatus for growing gallium nitride based epitaxial layer and method of growing thereof KR20110140024A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020100060193A KR20110140024A (en) 2010-06-24 2010-06-24 Apparatus for growing gallium nitride based epitaxial layer and method of growing thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100060193A KR20110140024A (en) 2010-06-24 2010-06-24 Apparatus for growing gallium nitride based epitaxial layer and method of growing thereof

Publications (1)

Publication Number Publication Date
KR20110140024A true KR20110140024A (en) 2011-12-30

Family

ID=45505311

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100060193A KR20110140024A (en) 2010-06-24 2010-06-24 Apparatus for growing gallium nitride based epitaxial layer and method of growing thereof

Country Status (1)

Country Link
KR (1) KR20110140024A (en)

Similar Documents

Publication Publication Date Title
JP6166392B2 (en) Light emitting diode
US8110889B2 (en) MOCVD single chamber split process for LED manufacturing
US20110244663A1 (en) Forming a compound-nitride structure that includes a nucleation layer
US20110227037A1 (en) Enhancement of led light extraction with in-situ surface roughening
US20110081771A1 (en) Multichamber split processes for led manufacturing
US8138069B2 (en) Substrate pretreatment for subsequent high temperature group III depositions
TW201331987A (en) Composite substrate, manufacturing method thereof and light emitting device having the same
US20110207256A1 (en) In-situ acceptor activation with nitrogen and/or oxygen plasma treatment
TWI435476B (en) Light emitting diodes with n-polarity and associated methods of manufacturing
US20120315741A1 (en) Enhanced magnesium incorporation into gallium nitride films through high pressure or ald-type processing
KR20120034031A (en) Systems and methods for forming semiconductor material by atomic layer deposition
US20120258580A1 (en) Plasma-assisted mocvd fabrication of p-type group iii-nitride materials
US20110263111A1 (en) Group iii-nitride n-type doping
CN109346561A (en) A kind of preparation method of GaN base light emitting epitaxial wafer
WO2010129289A2 (en) Decontamination of mocvd chamber using nh3 purge after in-situ cleaning
US20110189457A1 (en) Method of forming nitride film and nitride structure
US20160365474A1 (en) Group iii nitride semiconductor light-emitting device and production method therefor
KR20110140024A (en) Apparatus for growing gallium nitride based epitaxial layer and method of growing thereof
JP2013016863A (en) P-type compound semiconductor layer formation method
US9711684B2 (en) Group III nitride semiconductor light-emitting device and production method therefor
US8318522B2 (en) Surface passivation techniques for chamber-split processing
KR101162059B1 (en) Metal organic chemical vapor deposition method

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination