KR20110124214A - 균일한 기판을 포함하는 넓은 면적의 균일한 어레이 제작 - Google Patents

균일한 기판을 포함하는 넓은 면적의 균일한 어레이 제작 Download PDF

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Publication number
KR20110124214A
KR20110124214A KR1020117017435A KR20117017435A KR20110124214A KR 20110124214 A KR20110124214 A KR 20110124214A KR 1020117017435 A KR1020117017435 A KR 1020117017435A KR 20117017435 A KR20117017435 A KR 20117017435A KR 20110124214 A KR20110124214 A KR 20110124214A
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KR
South Korea
Prior art keywords
array
tip
cantilever
substrate
article
Prior art date
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Withdrawn
Application number
KR1020117017435A
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English (en)
Korean (ko)
Inventor
나빌 아. 암로
레이몬드 세인드린
얼 제이. 거빈스
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나노잉크, 인크.
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Publication date
Application filed by 나노잉크, 인크. filed Critical 나노잉크, 인크.
Publication of KR20110124214A publication Critical patent/KR20110124214A/ko
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)
  • Apparatus Associated With Microorganisms And Enzymes (AREA)
  • Micro-Organisms Or Cultivation Processes Thereof (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020117017435A 2009-01-26 2010-01-25 균일한 기판을 포함하는 넓은 면적의 균일한 어레이 제작 Withdrawn KR20110124214A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14745209P 2009-01-26 2009-01-26
US61/147,452 2009-01-26

Publications (1)

Publication Number Publication Date
KR20110124214A true KR20110124214A (ko) 2011-11-16

Family

ID=42096549

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117017435A Withdrawn KR20110124214A (ko) 2009-01-26 2010-01-25 균일한 기판을 포함하는 넓은 면적의 균일한 어레이 제작

Country Status (8)

Country Link
US (1) US20100221505A1 (https=)
EP (1) EP2389614A1 (https=)
JP (1) JP2012515560A (https=)
KR (1) KR20110124214A (https=)
AU (1) AU2010206594A1 (https=)
CA (1) CA2750430A1 (https=)
SG (1) SG172852A1 (https=)
WO (1) WO2010085769A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010085767A1 (en) * 2009-01-26 2010-07-29 Nanoink. Inc. Large area, homogeneous array fabrication including controlled tip loading vapor deposition
US8214916B2 (en) * 2009-01-26 2012-07-03 Nanoink, Inc. Large area, homogeneous array fabrication including leveling with use of bright spots
US9276190B2 (en) 2013-10-01 2016-03-01 The Pen Practical method of producing an aerogel composite continuous thin film thermoelectric semiconductor material by modified MOCVD
US9040339B2 (en) 2013-10-01 2015-05-26 The Pen Practical method of producing an aerogel composite continuous thin film thermoelectric semiconductor material
WO2021016354A1 (en) * 2019-07-23 2021-01-28 University Of Massachusetts Thermal imprinting of nanostructure materials

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE23838E (en) 1950-09-14 1954-06-08 Post-deflected color kinescope
US5171992A (en) 1990-10-31 1992-12-15 International Business Machines Corporation Nanometer scale probe for an atomic force microscope, and method for making same
US6827979B2 (en) * 1999-01-07 2004-12-07 Northwestern University Methods utilizing scanning probe microscope tips and products therefor or produced thereby
US6635311B1 (en) 1999-01-07 2003-10-21 Northwestern University Methods utilizing scanning probe microscope tips and products therefor or products thereby
US7291284B2 (en) * 2000-05-26 2007-11-06 Northwestern University Fabrication of sub-50 nm solid-state nanostructures based on nanolithography
US6642129B2 (en) 2001-07-26 2003-11-04 The Board Of Trustees Of The University Of Illinois Parallel, individually addressable probes for nanolithography
SE0102764D0 (sv) 2001-08-17 2001-08-17 Astrazeneca Ab Compounds
US7279046B2 (en) 2002-03-27 2007-10-09 Nanoink, Inc. Method and apparatus for aligning patterns on a substrate
US7060977B1 (en) 2002-05-14 2006-06-13 Nanoink, Inc. Nanolithographic calibration methods
EP1363164B1 (en) 2002-05-16 2015-04-29 NaWoTec GmbH Procedure for etching of materials at the surface with focussed electron beam induced chemical reactions at said surface
WO2004044552A2 (en) 2002-11-12 2004-05-27 Nanoink, Inc. Methods and apparatus for ink delivery to nanolithographic probe systems
US20040228962A1 (en) 2003-05-16 2004-11-18 Chang Liu Scanning probe microscopy probe and method for scanning probe contact printing
WO2005115630A2 (en) 2004-04-30 2005-12-08 Bioforce Nanosciences, Inc. Method and apparatus for depositing material onto a surface
EP1830184B1 (en) * 2004-10-29 2010-12-15 Japan Science and Technology Agency Substrate for maldi-tof ms and mass spectrometry method using the same
WO2006076272A2 (en) 2005-01-10 2006-07-20 Bioforce Nanosciences, Inc. Topographically indexed support substrates
EP2013662B1 (en) * 2006-04-19 2013-08-14 Northwestern University Article for parallel lithography with two-dimensional pen arrays
US8192795B2 (en) * 2006-06-28 2012-06-05 Northwestern University Etching and hole arrays
US8256017B2 (en) * 2006-08-31 2012-08-28 Nanoink, Inc. Using optical deflection of cantilevers for alignment
WO2008121137A2 (en) * 2006-12-18 2008-10-09 Northwestern University Fabrication of microstructures and nanostructures using etching resist
AU2008225175A1 (en) * 2007-03-13 2008-09-18 Nanoink, Inc. Nanolithography with use of viewports
JP5269887B2 (ja) 2007-05-09 2013-08-21 ナノインク インコーポレーティッド 小型ナノファブリケーション装置
WO2009020658A1 (en) * 2007-08-08 2009-02-12 Northwestern University Independently-addressable, self-correcting inking for cantilever arrays
WO2009099619A2 (en) * 2008-02-05 2009-08-13 Nanoink, Inc. Array and cantilever array leveling
WO2009132321A1 (en) 2008-04-25 2009-10-29 Northwestern University Polymer pen lithography
GB0812789D0 (en) * 2008-07-12 2008-08-20 Univ Liverpool Materials and methods for cell growth
US8214916B2 (en) * 2009-01-26 2012-07-03 Nanoink, Inc. Large area, homogeneous array fabrication including leveling with use of bright spots
WO2010085767A1 (en) * 2009-01-26 2010-07-29 Nanoink. Inc. Large area, homogeneous array fabrication including controlled tip loading vapor deposition
AU2010206595A1 (en) * 2009-01-26 2011-07-28 Nanoink, Inc. Large area, homogeneous array fabrication including substrate temperature control
US9918209B2 (en) 2013-10-28 2018-03-13 Microsoft Technology Licensing, Llc Policies for selecting sources for resource strings

Also Published As

Publication number Publication date
AU2010206594A1 (en) 2011-07-28
WO2010085769A1 (en) 2010-07-29
SG172852A1 (en) 2011-08-29
US20100221505A1 (en) 2010-09-02
EP2389614A1 (en) 2011-11-30
CA2750430A1 (en) 2010-07-29
JP2012515560A (ja) 2012-07-12

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PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000