KR20110124214A - 균일한 기판을 포함하는 넓은 면적의 균일한 어레이 제작 - Google Patents

균일한 기판을 포함하는 넓은 면적의 균일한 어레이 제작 Download PDF

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Publication number
KR20110124214A
KR20110124214A KR1020117017435A KR20117017435A KR20110124214A KR 20110124214 A KR20110124214 A KR 20110124214A KR 1020117017435 A KR1020117017435 A KR 1020117017435A KR 20117017435 A KR20117017435 A KR 20117017435A KR 20110124214 A KR20110124214 A KR 20110124214A
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KR
South Korea
Prior art keywords
array
tip
cantilever
substrate
article
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Withdrawn
Application number
KR1020117017435A
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English (en)
Korean (ko)
Inventor
나빌 아. 암로
레이몬드 세인드린
얼 제이. 거빈스
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나노잉크, 인크.
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Application filed by 나노잉크, 인크. filed Critical 나노잉크, 인크.
Publication of KR20110124214A publication Critical patent/KR20110124214A/ko
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)
  • Apparatus Associated With Microorganisms And Enzymes (AREA)
  • Micro-Organisms Or Cultivation Processes Thereof (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020117017435A 2009-01-26 2010-01-25 균일한 기판을 포함하는 넓은 면적의 균일한 어레이 제작 Withdrawn KR20110124214A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14745209P 2009-01-26 2009-01-26
US61/147,452 2009-01-26

Publications (1)

Publication Number Publication Date
KR20110124214A true KR20110124214A (ko) 2011-11-16

Family

ID=42096549

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117017435A Withdrawn KR20110124214A (ko) 2009-01-26 2010-01-25 균일한 기판을 포함하는 넓은 면적의 균일한 어레이 제작

Country Status (8)

Country Link
US (1) US20100221505A1 (https=)
EP (1) EP2389614A1 (https=)
JP (1) JP2012515560A (https=)
KR (1) KR20110124214A (https=)
AU (1) AU2010206594A1 (https=)
CA (1) CA2750430A1 (https=)
SG (1) SG172852A1 (https=)
WO (1) WO2010085769A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010085768A1 (en) * 2009-01-26 2010-07-29 Nanoink,Inc. Large area, homogeneous array fabbrication including leveling with use of bright spots
KR20110119665A (ko) * 2009-01-26 2011-11-02 나노잉크, 인크. 조절된 팁 로딩 증착을 포함하는 넓은 면적의 균일한 어레이 제작
US9040339B2 (en) 2013-10-01 2015-05-26 The Pen Practical method of producing an aerogel composite continuous thin film thermoelectric semiconductor material
US9276190B2 (en) 2013-10-01 2016-03-01 The Pen Practical method of producing an aerogel composite continuous thin film thermoelectric semiconductor material by modified MOCVD
EP4003683A4 (en) 2019-07-23 2024-08-07 University Of Massachusetts THERMAL PRINTING OF NANOSTRUCTURED MATERIALS

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USRE23838E (en) 1950-09-14 1954-06-08 Post-deflected color kinescope
US5171992A (en) 1990-10-31 1992-12-15 International Business Machines Corporation Nanometer scale probe for an atomic force microscope, and method for making same
US6635311B1 (en) * 1999-01-07 2003-10-21 Northwestern University Methods utilizing scanning probe microscope tips and products therefor or products thereby
US6827979B2 (en) * 1999-01-07 2004-12-07 Northwestern University Methods utilizing scanning probe microscope tips and products therefor or produced thereby
US7291284B2 (en) 2000-05-26 2007-11-06 Northwestern University Fabrication of sub-50 nm solid-state nanostructures based on nanolithography
US6642129B2 (en) * 2001-07-26 2003-11-04 The Board Of Trustees Of The University Of Illinois Parallel, individually addressable probes for nanolithography
SE0102764D0 (sv) 2001-08-17 2001-08-17 Astrazeneca Ab Compounds
WO2003083876A2 (en) 2002-03-27 2003-10-09 Nanoink, Inc. Method and apparatus for aligning patterns on a substrate
US7060977B1 (en) * 2002-05-14 2006-06-13 Nanoink, Inc. Nanolithographic calibration methods
EP1363164B1 (en) 2002-05-16 2015-04-29 NaWoTec GmbH Procedure for etching of materials at the surface with focussed electron beam induced chemical reactions at said surface
AU2003287618A1 (en) 2002-11-12 2004-06-03 Nanoink, Inc. Methods and apparatus for ink delivery to nanolithographic probe systems
US20040228962A1 (en) * 2003-05-16 2004-11-18 Chang Liu Scanning probe microscopy probe and method for scanning probe contact printing
CA2564876C (en) 2004-04-30 2013-04-16 Bioforce Nanosciences, Inc. Method and apparatus for depositing material onto a surface
DE602005025401D1 (de) * 2004-10-29 2011-01-27 Japan Science & Tech Agency Hes verfahren unter verwendung davon
US7339282B2 (en) 2005-01-10 2008-03-04 Bioforce Nanosciences, Inc. Topographically indexed support substrates
US8220317B2 (en) * 2006-04-19 2012-07-17 Northwestern University Massively parallel lithography with two-dimensional pen arrays
US8192795B2 (en) * 2006-06-28 2012-06-05 Northwestern University Etching and hole arrays
US8256017B2 (en) * 2006-08-31 2012-08-28 Nanoink, Inc. Using optical deflection of cantilevers for alignment
JP2010530126A (ja) * 2006-12-18 2010-09-02 ノースウエスタン ユニバーシティ エッチングレジストを用いたミクロ構造およびナノ構造の製造方法
WO2008112713A1 (en) * 2007-03-13 2008-09-18 Nanoink, Inc. Nanolithography with use of viewports
US20090023607A1 (en) 2007-05-09 2009-01-22 Nanolnk, Inc. Compact nanofabrication apparatus
EP2185975A1 (en) * 2007-08-08 2010-05-19 Northwestern University Independently-addressable, self-correcting inking for cantilever arrays
KR20100121634A (ko) * 2008-02-05 2010-11-18 나노잉크, 인크. 어레이 및 캔틸레버 어레이 레벨링 방법
EP2283395B1 (en) 2008-04-25 2018-08-22 Northwestern University Polymer pen lithography
GB0812789D0 (en) * 2008-07-12 2008-08-20 Univ Liverpool Materials and methods for cell growth
KR20110119665A (ko) * 2009-01-26 2011-11-02 나노잉크, 인크. 조절된 팁 로딩 증착을 포함하는 넓은 면적의 균일한 어레이 제작
WO2010085768A1 (en) * 2009-01-26 2010-07-29 Nanoink,Inc. Large area, homogeneous array fabbrication including leveling with use of bright spots
CA2750434A1 (en) * 2009-01-26 2010-07-29 Nanoink, Inc. Large area, homogeneous array fabrication including substrate temperature control
US9918209B2 (en) 2013-10-28 2018-03-13 Microsoft Technology Licensing, Llc Policies for selecting sources for resource strings

Also Published As

Publication number Publication date
WO2010085769A1 (en) 2010-07-29
EP2389614A1 (en) 2011-11-30
JP2012515560A (ja) 2012-07-12
CA2750430A1 (en) 2010-07-29
SG172852A1 (en) 2011-08-29
AU2010206594A1 (en) 2011-07-28
US20100221505A1 (en) 2010-09-02

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PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000