KR20110108097A - Light emitting device package and lighting system including the same - Google Patents

Light emitting device package and lighting system including the same Download PDF

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Publication number
KR20110108097A
KR20110108097A KR1020100027406A KR20100027406A KR20110108097A KR 20110108097 A KR20110108097 A KR 20110108097A KR 1020100027406 A KR1020100027406 A KR 1020100027406A KR 20100027406 A KR20100027406 A KR 20100027406A KR 20110108097 A KR20110108097 A KR 20110108097A
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KR
South Korea
Prior art keywords
light emitting
emitting device
electrode layer
device package
pattern
Prior art date
Application number
KR1020100027406A
Other languages
Korean (ko)
Inventor
노용진
Original Assignee
엘지이노텍 주식회사
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Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020100027406A priority Critical patent/KR20110108097A/en
Publication of KR20110108097A publication Critical patent/KR20110108097A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48092—Helix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85385—Shape, e.g. interlocking features

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  • Led Device Packages (AREA)

Abstract

Embodiments relate to a light emitting device package and an illumination system including the same.
The light emitting device package according to the embodiment includes a body portion; At least one electrode layer on the body, including a pattern; A light emitting device installed on the body and electrically connected to the electrode layer; And an encapsulant surrounding the light emitting device.

Description

LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME}

Embodiments relate to a light emitting device package and an illumination system including the same.

Light emitting devices (LEDs) are semiconductor devices that convert current into light.

Recently, the light emitting device has been gradually increased in brightness and is used as a light source for a display, a light source for an automobile, and a light source for an illumination, and an LED that emits white light having high efficiency can be realized by using a fluorescent material or by combining LEDs of various colors. .

The light emitting device package according to the related art generates heat according to the operation of the light emitting device, and the heat generation of the lead frame and the encapsulant is caused by such heat.

In addition, according to the prior art there is a problem that the effective heat dissipation means for heat generated when the light emitting device is operating.

Embodiments provide a light emitting device package capable of preventing lifting between an electrode layer (lead frame) and an encapsulant and an illumination system including the same.

In addition, an embodiment is to provide a light emitting device package having excellent heat dissipation and an illumination system including the same.

The light emitting device package according to the embodiment includes a body portion; At least one electrode layer on the body, including a pattern; A light emitting device installed on the body and electrically connected to the electrode layer; And an encapsulant surrounding the light emitting device.

In addition, the lighting system according to the embodiment includes a body portion, at least one electrode layer installed in the body portion including a pattern, a light emitting element provided in the body portion and electrically connected to the electrode layer and surrounding the light emitting element A light emitting device package including an encapsulant; And a light emitting module unit including the light emitting device package.

According to the light emitting device package and the lighting system including the same according to the embodiment, it is possible to prevent the lifting between the electrode layer and the encapsulant by increasing the contact area between the electrode layer and the encapsulant.

In addition, the embodiment is excellent in heat dissipation performance by widening the contact area between the electrode layer and the sealing material.

1A is a cross-sectional view of a light emitting device package according to an embodiment.
1B is a cross-sectional view of a light emitting device package according to another embodiment.
2 is a first enlarged partial view of an electrode layer in a light emitting device package according to an embodiment;
3 is an enlarged second exemplary view of an electrode layer in a light emitting device package according to an embodiment;
4 is a perspective view of a lighting unit according to an embodiment;
5 is an exploded perspective view of the backlight unit according to the embodiment;

In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and" under "are intended to include both" directly "or" indirectly " do. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

(Example)

1A is a cross-sectional view of a light emitting device package 500 according to an embodiment.

The light emitting device package according to the embodiment is provided in the body portion 100, the at least one electrode layer 110 installed on the body portion 100, the body portion 100 is electrically connected to the electrode layer 110 The light emitting device 200 may be included, and an encapsulant 310 surrounding the light emitting device 200 may be included.

An embodiment may include a phosphor (not shown) in the encapsulant 310.

1B is a cross-sectional view of a light emitting device package according to another embodiment. For example, the encapsulant 310 may be used as a transparent resin, and the phosphor layer 320 may be formed on the body portion 100. For example, the phosphor layer 320 may be coated by a screen printing method or may be formed of a photo luminescent film (PLF), but is not limited thereto.

The body part 100 may include at least one of a silicon material, a synthetic resin material such as polyphthalamide (PPA), a metal material, a photo sensitive glass (PSG), sapphire (Al 2 O 3 ), and a printed circuit board (PCB). It can be formed as one. The body part 100 may include a cavity having an inclined surface surrounding the light emitting device 200, and a reflective layer (not shown) may be formed on the inclined surface.

When the body part 100 is formed of a material having electrical conductivity, an insulating film (not shown) is further formed on the surface of the body part 100 so that the body part 100 is formed of the first electrode layer 111 and the first material. It is prevented from being electrically shorted with the two electrode layers 112.

The shape of the upper surface of the body portion 100 may have a variety of shapes, such as rectangular, polygonal, circular, depending on the use and design of the light emitting device package. For example, a rectangular light emitting device package may be used as a component of a backlight unit of a display device.

The body portion 100 may be formed with a cavity (cavity) so that the upper portion is opened. The cavity may be formed in a cup shape, a concave container shape, or the like, and the inner surface of the cavity may be a side perpendicular to the floor or an inclined side.

The shape of the cavity viewed from above may be a shape of a circle, a rectangle, a polygon, an oval, or the like.

In an embodiment, the electrode layer 110 may include the first electrode layer 111 and the second electrode layer 112, but is not limited thereto.

The first electrode layer 110 and the second electrode layer 120 may be electrically separated from each other, may be formed through the body portion 100, and serve to provide power to the light emitting device 200. In addition, the first electrode layer 110 and the second electrode layer 120 may serve to increase light efficiency by reflecting light generated from the light emitting device 200, and may be generated from the light emitting device 200. It may also serve to release heat to the outside.

The first electrode layer 111 and the second electrode layer 112 are made of a metal material, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), and tantalum ( It may include at least one of Ta), platinum (Pt), tin (Sn), silver (Ag), phosphorus (P). In addition, the first electrode layer 111 and the second electrode layer 112 may be formed to have a single layer or a multilayer structure, but is not limited thereto.

The first electrode layer 111 and the second electrode layer 112 may be formed to penetrate the body portion 100 to form a bottom of the light emitting device package, and the first electrode layer 111 and the second electrode layer ( An end portion of the 112 may be exposed to the outside of the body portion 100.

Since the first electrode layer 111 and the second electrode layer 112 are formed to penetrate the body part 100, the light emission mounted on any one of the first electrode layer 111 and the second electrode layer 112. Heat generated from the device 200 may be efficiently discharged through the first electrode layer 111 or the second electrode layer 112.

In the embodiment, the light emitting device 200 is illustrated on the second electrode layer 112, but the light emitting device 200 is installed on the body part 100 to provide the first electrode layer 111 and And / or may be electrically connected to the second electrode layer 112.

2 is an enlarged first exemplary view of an electrode layer in a light emitting device package according to an embodiment.

Embodiments provide a light emitting device package capable of preventing lifting between an electrode layer, which is a lead frame, and an encapsulant, and an illumination system including the same. In addition, an embodiment is to provide a light emitting device package having excellent heat dissipation and an illumination system including the same.

To this end, the electrode layer 110 in the light emitting device package according to the embodiment may include at least one pattern (P).

As the pattern P is formed on the electrode layer 110, the contact area with the encapsulant 310 is increased, thereby increasing the bonding force between the lead layer electrode layer and the encapsulant, thereby reducing the influence of heat generation of the light emitting device. It is possible to prevent the lifting between the electrode layer and the sealing material.

For example, according to the exemplary embodiment, the first pattern region A may be formed on the first electrode layer 111 and the second pattern region B may be formed on the second electrode layer 112.

Meanwhile, in an embodiment, a pattern may not be formed on the electrode layer contact surface to which the wire 210 is directly bonded, but is not limited thereto.

In addition, according to the embodiment, when the encapsulant absorbs heat, the heat dissipation function may be increased through the electrode layer having the pattern as the contact area between the encapsulant and the electrode layer increases.

In the exemplary embodiment, the shape of the pattern P formed on the electrode layer may be triangular in cross section as shown in FIG. 2, but is not limited thereto.

3 is an enlarged second exemplary view of a lead frame in the light emitting device package according to the embodiment.

In the exemplary embodiment, the shape of the pattern P formed on the electrode layer may have an arc shape as shown in FIG. 3, but is not limited thereto. For example, the pattern formed on the electrode layer 110 may have a trench shape having a rectangular cross section.

According to an embodiment, the pattern P formed on the electrode layer 110 may be formed to be recessed based on the upper surface of the electrode layer 110, and may be formed through an etching process, a mold stamping process, or a downset process. It is not limited.

According to the light emitting device package according to the embodiment, it is possible to prevent the lift between the lead frame and the encapsulant by increasing the contact area between the lead frame and the encapsulant.

In addition, the embodiment is excellent in heat dissipation performance by widening the contact area between the lead frame and the encapsulant.

The light emitting device 200 disposed on the body part 100 may include, for example, at least one light emitting diode (LED), and the light emitting diode may be red, green, blue, white, or the like. It may be a colored light emitting diode emitting light of UV or an ultraviolet (Ultra Violet) light emitting diode emitting ultraviolet light, but is not limited thereto.

As the method of arranging the light emitting device 200 on the body part 100, a method of adhering the light emitting device using a polymer adhesive or a method of using a eutectic metal plated on the light emitting device may be performed.

For example, when a light emitting device chip is attached by soldering with silver conductive epoxy having excellent processability, or when high thermal conductivity is required, a eutectic bonding method may be employed, but is not limited thereto. .

As illustrated, the light emitting device 200 may be electrically connected to the first electrode layer 111 and the second electrode layer 112 by a wire bonding method, or may be flip chip or die bonding. The first electrode layer 111 and the second electrode layer 112 may be electrically connected by a die bonding method or the like.

For example, the light emitting device 200 is a horizontal type light emitting device in which both the n-side electrode layer and the p-side electrode layer are disposed on the upper surface of the light emitting device structure. A flip chip type light emitting device disposed, or a vertical type light emitting device in which an n-side electrode layer and a p-side electrode layer are disposed on an upper surface and a lower surface of a light emitting device structure may be applied.

A vertical type light emitting device is illustrated in FIG. 1A, and the n-side electrode layer of the light emitting device 200 is electrically connected to the first electrode layer 110 through a wire 210 and the p of the light emitting device 200 is connected. The side electrode layer is in contact with the second electrode layer 120. For example, the light emitting device 200 may be formed of a light emitting diode including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer.

The wire 210 may employ any one or more of a gold wire, a copper wire, and an aluminum wire, and the wire bonding may be performed by a ball wire bonding method or an edge wire bonding method.

The light emitting device 200 may be installed on the body portion 100 or may be installed on the first electrode layer 110 or the second electrode layer 120. 1A illustrates that the light emitting device 200 is installed on the second electrode layer 120.

An encapsulant 310 may be formed in the cavity of the body part 100 to seal and protect the light emitting device 200, and the encapsulant 310 may include a phosphor (not shown).

The encapsulation of the encapsulant 310 may be performed by dispensing, casting molding, transfer molding, vacuum printing, or the like.

The encapsulant 310 may be formed of silicon or a resin material. The encapsulant 310 may be formed by filling the silicon or resin material in the cavity and then curing the encapsulation material, but the present invention is not limited thereto.

The encapsulant 310 may have a flat top surface, but is not limited thereto. The top surface may be convex. When the upper surface is convex, the light emitted to the outside through the encapsulant 310 may reduce the amount of total reflection at the interface between the encapsulant 310 and the outside.

The phosphor may include a host material and an active material, for example, a cerium (Ce) active material in a host material of yttrium aluminum garnet (YAG), and an europium (Eu) active material in a silicide-based host material. It may employ but is not limited to such.

The phosphor may be added in the encapsulant 310 and may be excited by light emitted from the light emitting device 200 to generate light having a different wavelength.

For example, when the light emitting device 200 is a blue light emitting diode and the phosphor is a yellow phosphor, the yellow phosphor may be excited by blue light to emit yellow light, and the blue light and the yellow light are mixed. As the light emitting device package may provide white light, the present invention is not limited thereto.

According to the light emitting device package and the lighting system including the same according to the embodiment, it is possible to prevent the lift between the lead frame and the encapsulant by increasing the contact area between the lead frame and the encapsulant.

In addition, the embodiment is excellent in heat dissipation performance by widening the contact area between the lead frame and the encapsulant.

The light emitting device package according to the embodiment may be applied to an illumination system. The lighting system includes a lighting unit shown in FIG. 4 and a backlight unit shown in FIG. 5, and may include a traffic light, a vehicle headlight, a signboard, and the like.

4 is a perspective view 1100 of a lighting unit according to an embodiment.

Referring to FIG. 4, the lighting unit 1100 is installed in the case body 1110, the light emitting module unit 1130 installed in the case body 1110, and the case body 1110 and supplies power from an external power source. It may include a connection terminal 1120 provided.

The case body 1110 may be formed of a material having good heat dissipation characteristics. For example, the case body 1110 may be formed of a metal material or a resin material.

The light emitting module unit 1130 may include a substrate 1132 and at least one light emitting device package 500 mounted on the substrate 1132.

The substrate 1132 may be a circuit pattern printed on an insulator, and for example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, and the like. It may include.

In addition, the substrate 1132 may be formed of a material that reflects light efficiently, or the surface may be formed of a color that reflects light efficiently, for example, white, silver, or the like.

The at least one light emitting device package 500 may be mounted on the substrate 1132. Each of the light emitting device packages 500 may include at least one light emitting diode (LED) 200. The light emitting diodes 200 may include colored light emitting diodes emitting red, green, blue, or white colored light, and UV light emitting diodes emitting ultraviolet (UV) light.

The light emitting module unit 1130 may be disposed to have a combination of various light emitting device packages 500 to obtain color and brightness. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1120 may be electrically connected to the light emitting module unit 1130 to supply power. According to FIG. 4, the connection terminal 1120 is coupled to the external power source by being connected to the socket in a socket manner, but is not limited thereto. For example, the connection terminal 1120 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

5 is an exploded perspective view 1200 of a backlight unit according to an embodiment.

The backlight unit 1200 according to the embodiment includes a light guide plate 1210, a light emitting module unit 1240 that provides light to the light guide plate 1210, a reflective member 1220 under the light guide plate 1210, and the light guide plate. 1210, a bottom cover 1230 for accommodating the light emitting module unit 1240 and the reflective member 1220, but is not limited thereto.

The light guide plate 1210 serves to surface light by diffusing light. The light guide plate 1210 is made of a transparent material, for example, an acrylic resin series such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module unit 1240 provides light to at least one side of the light guide plate 1210 and ultimately serves as a light source of a display device in which the backlight unit is installed.

The light emitting module unit 1240 may be in contact with the light guide plate 1210, but is not limited thereto. Specifically, the light emitting module unit 1240 includes a substrate 1242 and a plurality of light emitting device packages 500 mounted on the substrate 1242, wherein the substrate 1242 is connected to the light guide plate 1210. It may be encountered, but is not limited thereto.

The substrate 1242 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the substrate 1242 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB), and the like, but is not limited thereto.

The plurality of light emitting device packages 500 may be mounted on the substrate 1242 such that a light emitting surface on which light is emitted is spaced apart from the light guide plate 1210 by a predetermined distance.

The reflective member 1220 may be formed under the light guide plate 1210. The reflective member 1220 may improve the luminance of the backlight unit by reflecting the light incident on the lower surface of the light guide plate 1210 upward. The reflective member 1220 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto.

The bottom cover 1230 may accommodate the light guide plate 1210, the light emitting module unit 1240, the reflective member 1220, and the like. To this end, the bottom cover 1230 may be formed in a box shape having an upper surface opened, but is not limited thereto.

The bottom cover 1230 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in each embodiment may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

In addition, the above description has been made with reference to the embodiments, which are merely examples and are not intended to limit the embodiments, and those skilled in the art to which the embodiments belong may not be exemplified above without departing from the essential characteristics of the embodiments. It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

Claims (11)

A body portion;
At least one electrode layer on the body, including a pattern;
A light emitting device installed on the body and electrically connected to the electrode layer; And
A light emitting device package comprising an encapsulant surrounding the light emitting device. The method according to claim 1,
The electrode layer,
Light emitting device package comprising a pattern on the upper surface. The method according to claim 1,
The light emitting device package is filled with the encapsulant in the pattern of the electrode layer. The method according to claim 1,
The electrode layer includes a first electrode layer, a second electrode layer,
The electrode layer may include a first pattern region on the first electrode layer and a second pattern region on the second electrode layer. The method according to claim 1,
The electrode layer,
The light emitting device package does not form a pattern on the contact surface bonded to the wire. The method according to claim 1,
The pattern is
A light emitting device package having a vertical cross section of any one of triangle, square, or arc shape. The method according to claim 1,
The light emitting device package of the contact area between the electrode layer and the encapsulant is increased by the pattern. The method according to claim 1,
The pattern is
The light emitting device package is formed to be recessed relative to the upper surface of the electrode layer. The method according to claim 1,
The pattern of the electrode layer is
A light emitting device package formed through an etching process, a mold stamping process or a downset process. A light emitting device package including a body part, at least one electrode layer including a pattern, a light emitting device installed on the body part and electrically connected to the electrode layer, and an encapsulant surrounding the light emitting device; And,
And a light emitting module unit having the light emitting device package. The method of claim 10,
The light emitting device package is an illumination system of any one of claims 2 to 9.
KR1020100027406A 2010-03-26 2010-03-26 Light emitting device package and lighting system including the same KR20110108097A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130056769A (en) * 2011-11-22 2013-05-30 엘지이노텍 주식회사 Light-emitting device package and light-emitting module
KR20180049940A (en) * 2016-11-04 2018-05-14 (주)포인트엔지니어링 Light emitting device and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130056769A (en) * 2011-11-22 2013-05-30 엘지이노텍 주식회사 Light-emitting device package and light-emitting module
KR20180049940A (en) * 2016-11-04 2018-05-14 (주)포인트엔지니어링 Light emitting device and manufacturing method thereof

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