KR20110077731A - Solar cell - Google Patents
Solar cell Download PDFInfo
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- KR20110077731A KR20110077731A KR1020090134378A KR20090134378A KR20110077731A KR 20110077731 A KR20110077731 A KR 20110077731A KR 1020090134378 A KR1020090134378 A KR 1020090134378A KR 20090134378 A KR20090134378 A KR 20090134378A KR 20110077731 A KR20110077731 A KR 20110077731A
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- front electrode
- solar cell
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000011858 nanopowder Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 7
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 239000011230 binding agent Substances 0.000 claims description 16
- 239000002003 electrode paste Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
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- 239000011521 glass Substances 0.000 claims description 12
- 239000002904 solvent Substances 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
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- 230000008859 change Effects 0.000 description 9
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- 239000000654 additive Substances 0.000 description 8
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- 239000012535 impurity Substances 0.000 description 4
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- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
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- 238000010557 suspension polymerization reaction Methods 0.000 description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
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- INQDDHNZXOAFFD-UHFFFAOYSA-N 2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOC(=O)C=C INQDDHNZXOAFFD-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
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- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 description 2
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- CUDYYMUUJHLCGZ-UHFFFAOYSA-N 2-(2-methoxypropoxy)propan-1-ol Chemical compound COC(C)COC(C)CO CUDYYMUUJHLCGZ-UHFFFAOYSA-N 0.000 description 1
- RSROEZYGRKHVMN-UHFFFAOYSA-N 2-ethyl-2-(hydroxymethyl)propane-1,3-diol;oxirane Chemical compound C1CO1.CCC(CO)(CO)CO RSROEZYGRKHVMN-UHFFFAOYSA-N 0.000 description 1
- FUQUBWCLBBUXCM-UHFFFAOYSA-N 2-ethyl-2-(hydroxymethyl)propane-1,3-diol;prop-1-ene Chemical group CC=C.CCC(CO)(CO)CO FUQUBWCLBBUXCM-UHFFFAOYSA-N 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- GWZMWHWAWHPNHN-UHFFFAOYSA-N 2-hydroxypropyl prop-2-enoate Chemical compound CC(O)COC(=O)C=C GWZMWHWAWHPNHN-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
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- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 229910020443 SiO2—PbO—B2O3 Inorganic materials 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
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- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 125000003172 aldehyde group Chemical group 0.000 description 1
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- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
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- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
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- 239000007788 liquid Substances 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- CJJMLLCUQDSZIZ-UHFFFAOYSA-N oxobismuth Chemical class [Bi]=O CJJMLLCUQDSZIZ-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
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- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 150000007519 polyprotic acids Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
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- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 229940096522 trimethylolpropane triacrylate Drugs 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The present invention relates to a solar cell. The solar cell according to the present invention includes a silicon semiconductor substrate, an emitter layer formed on the substrate, an antireflection film formed on the emitter layer, and a front electrode connected to the emitter layer through the antireflection film, wherein the front electrode includes a silver powder and Nano powder, and the nano powder includes at least one of dry silica, a metal, and a metal oxide. As a result, the resistance of the front electrode can be reduced to improve the efficiency of the solar cell.
Description
The present invention relates to a solar cell, and more particularly, to a solar cell having a front electrode formed of a nano-powder.
Recently, with the anticipation of depletion of existing energy sources such as oil and coal, there is increasing interest in alternative energy to replace them. Among them, solar cells are in the spotlight as next generation batteries using semiconductor devices that directly convert solar energy into electrical energy.
Solar cells are roughly classified into silicon solar cells, compound semiconductor solar cells, and tandem solar cells. Among them, silicon solar cells are the mainstream.
Meanwhile, the front electrode of a silicon solar cell is formed using a paste containing silver powder, an organic binder, glass frit, etc., and the paste has a low viscosity when a large amount of additive is added to secure the thixotropy of the paste. There may be difficulties in securing pattern characteristics.
An object of the present invention to provide a solar cell comprising a front electrode having a high aspect ratio by preventing the flow of the front electrode paste.
The solar cell according to the present invention for achieving the above object comprises a silicon semiconductor substrate, an emitter layer formed on the substrate, an antireflection film formed on the emitter layer and a front electrode connected to the emitter layer through the antireflection film; The front electrode includes silver powder and nano powder, and the nano powder includes at least one of dry silica, a metal, and a metal oxide.
In addition, the average particle size of nano powder is 7-20 nm.
In addition, the aspect ratio of the front electrode is 0.41 to 0.59.
In addition, the front electrode paste according to the present invention for achieving the above object is 60 to 95 parts by weight of silver (Ag) powder, 0.1 to 8 parts by weight of glass frit, 0.5 to 1.5 parts by weight of nano powder, binder 1 To 20 parts by weight and 1 to 20 parts by weight of the solvent.
According to the present invention, the paste for the front electrode includes a nano powder including at least one of dry silica, a metal, and a metal oxide, thereby improving the aspect ratio of the front electrode and lowering the resistance of the front electrode, thereby increasing the efficiency of the solar cell. Can improve.
Hereinafter, with reference to the drawings will be described the present invention in more detail.
1 is a view showing the structure of a solar cell according to an embodiment of the present invention.
Referring to FIG. 1, the solar cell according to the present invention includes a
The
As described above, when impurities of the opposite conductivity type are doped to the
The
If the defect present in the
As such, when the open circuit voltage and the short circuit current of the solar cell are increased by the
The
The
The
First, the
During the heat treatment of the
When the rear electric field layer is formed, the carrier may be prevented from moving to the rear surface of the
In addition, the
On the other hand, as can be seen in Figure 1, the
Therefore, it is important to minimize the area without degrading the function of the
As a result, the aspect ratio of the
Table 1 below shows the aspect ratio of the
As can be seen from Table 1, when the aspect ratio of the
Therefore, the aspect ratio of the
The paste for forming the
First, the silver powder imparts conductivity to the paste, and the shape is not particularly limited as spherical or flake, but is preferably spherical in consideration of dispersibility.
On the other hand, when the amount of silver powder contained is less than 60 parts by weight, sufficient conductivity is not obtained in the
Further, it is preferable that the average particle size (D 50) of the powder is 1.7 to 3.21㎛. If the average particle size (D 50 ) of the silver powder is less than 1.7 μm, the fluidity of the paste may be deteriorated, and the workability may be degraded. On the other hand, if the average particle size (D 50 ) exceeds 3.21 μm, the voids may be formed in the electrode after firing. As a result, electrical resistance of the
Glass frit may be included in 0.1 to 8 parts by weight. When the glass frit is included in less than 0.1 part by weight, the adhesive strength of the electrode pattern to be formed may not be sufficient, whereas when the glass frit is added in excess of 8 parts by weight, the sinterability of the electrode pattern is lowered and the resistance of the resulting electrode is reduced. Can increase.
In addition, the glass frit is preferably a fine powder in the range of 0.5 to 2 μm of the average particle size (D 50 ) in order to effectively make a firing pattern without pinholes.
Examples of such glass frits may include lead oxides and / or bismuth oxides. Specifically, SiO 2 -PbO-based, SiO 2 -PbO-B 2 O 3 type, and Bi 2 O 3 -B 2 O 3 -SiO 2 based powder may be a one or as mixtures of two or more thereof selected from the group consisting of, It is not limited to this.
Nano powder may be included in 0.5 to 1.5 parts by weight, it means a nano-sized powder formed by at least one of metal powder, metal oxide and dry silica.
The average particle size (D 50 ) of the nanopowder is 7 to 20 nm, which is easy to adsorb to solvents and binders due to the high specific surface area, so that the viscosity of the paste can be easily increased even with a small amount, and the aspect ratio of the
Therefore, when the content of the nano-powder is contained less than 0.5 parts by weight, it is difficult to fully exhibit the above-described effect, while if it is contained in excess of 1.5 parts by weight, the viscosity of the paste is too high, so that the printability of the electrode pattern may be lowered, It is preferably included in 0.5 to 1.5 parts by weight.
The binder functions as a binder of each component before firing of the electrode pattern, and is preferably prepared by suspension polymerization for uniformity.
Such a binder may include a resin containing a carboxyl group, specifically, a carboxyl group-containing photosensitive resin having an ethylenically unsaturated double bond and a carboxyl group-containing resin not having an ethylenically unsaturated double bond.
For example, i) carboxyl group-containing resin obtained by copolymerizing an unsaturated carboxylic acid and a compound having an unsaturated double bond, and ii) a carboxyl group obtained by adding an ethylenically unsaturated group as a pendant to a copolymer of an unsaturated carboxylic acid and a compound having an unsaturated double bond. Containing photosensitive resin, iii) a carboxyl group-containing photosensitive resin obtained by reacting a copolymer of an acid anhydride having an unsaturated double bond with a compound having an unsaturated double bond, with a hydroxyl group and a compound having an unsaturated double bond, and the like. It is not.
Preferably, the binder is included in an amount of 1 to 20 parts by weight. If the amount of the binder is less than 1 part by weight, the distribution of the binder in the electrode pattern to be formed may become uneven, and patterning by selective exposure and development may be difficult. If it exceeds 20 parts by weight, it is easy to cause pattern collapse during firing of the electrode, and the resistance of the electrode may increase due to organic ash carbon after firing.
The solvent may dissolve the binder and may be mixed well with other additives. These include a-terpinol, buty cabitol acetate, texanol, buty cabitol, di-propylene glycol monomethyl ether And the like, including an aldehyde group, but are not limited thereto.
Such a solvent is preferably included in 1 to 20 parts by weight. When the content of the solvent is less than 1 part by weight, the paste may be difficult to apply uniformly. On the other hand, when it contains more than 20 parts by weight, sufficient conductivity of the electrode pattern may not be obtained, and adhesion to the substrate may be inferior. Because it is not desirable.
In addition, the paste for forming the
On the other hand, the photopolymerizable monomer among the additives is used to promote the photocurability of the conductive electrode paste and to improve the developability.
As the photopolymerizable monomer, 2-hydroxyethyl acrylate, 2-hydroxypropyl acrylate, diethylene glycol diacrylate, triethylene glycol diacrylate, polyethylene glycol diacrylate, polyurethane diacrylate, trimethylol propane Triacrylate, pentaerythrite triacrylate, pentaerythrite tetraacrylate, trimethylolpropane ethylene oxide modified triacrylate, trimethylolpropanepropylene oxide modified triacrylate, dipentaery little pentaacrylate, dipentaeryse Little hexaacrylate and each methacrylate corresponding to the said acrylate; Mono-, di-, tri- or more polyesters of polybasic acids such as phthalic acid, adipic acid, maleic acid, ataconic acid, succinic acid, trimellitic acid and terephthalic acid with hydroxyalkyl (meth) acrylates. However, it is not limited to a specific thing, These can be used individually or in combination of 2 or more types.
2A to 2C schematically illustrate a process of forming a front electrode using the front electrode paste described above, and FIG. 3 is a view illustrating a change in viscosity of the front electrode paste according to rotation of a spindle (RPM). .
2A to 2C are roads schematically illustrating a process of forming a front electrode by screen printing. Referring to FIGS. 2A to 2C, a process of forming a front electrode will be described. First, a
Subsequently, after the
At this time, as will be described later with reference to Figure 3, as the
Next, after the
In the drying step, the solvent included in the
On the other hand, Figure 3 is a view showing the viscosity change of the paste for the front electrode according to the rotation (RPM) of the spindle.
3 shows a change in viscosity of the paste for forming the front electrode according to the related art, and B shows a change in the viscosity of the paste for forming the front electrode according to the present invention. It can be seen that the change in viscosity is large.
Meanwhile, the viscosity change of the front electrode paste according to the rotation of the spindle represents the viscosity change of the paste due to the pressure applied to the paste according to the movement of the
Accordingly, FIG. 3 means a change in viscosity of the paste according to the pressure applied to the front electrode paste by the
That is, the
In addition, after forming the shape of the electrode, since the viscosity is quickly restored by Thixotropy property, the spreading of the paste is reduced, and can be formed with a relatively high aspect ratio.
This phenomenon is because the front electrode paste of the present invention contains nano powder as described above, and the inorganic additive included has a high specific surface area and thus is easily adsorbed to solvents and binders, so that the viscosity of the paste can be increased even with a small amount. This is because it is easy to maintain the shape after printing by preventing the flow of the paste.
4A and 4B illustrate a conventional front electrode pattern and a front electrode pattern according to the present invention.
4A and 4B illustrate a case in which the front electrode is formed through the processes of FIGS. 2A to 2C described above with the pastes having the A and B compositions of FIG. 3, respectively.
Here, the composition of the A paste is 80 parts by weight of silver powder having an average particle size of 2 µm, 3 parts by weight of glass frit Bi2O3-B2O3-SiO2, 3.5 parts by weight of a binder prepared by suspension polymerization of MMA and MAA, and 10.5 parts by weight of a solvent butylcarbitol. Part and other additives include photopolymerizable monomer Trimethylopropane Triacrylate, DAROCUR TRO as photoinitiator, BYK-352 as leveling agent.
The composition of the B paste is 80 parts by weight of silver powder having an average particle size of 2 µm, 3 parts by weight of glass frit Bi2O3-B2O3-SiO2, 2.5 parts by weight of a binder prepared by suspension polymerization of MMA and MAA, and butyl carbitol as a solvent. 10.5 parts by weight, 1 part by weight of dry silica nanopowder having an average particle size (D 50 ) of 15 nm, and other additives include the photopolymerizable monomer Trimethylopropane Triacrylate, DAROCUR TRO as a photoinitiator, and BYK-352 as a leveling agent.
Here, as can be seen in Figures 4a and 4b, it can be seen that the aspect ratio of the front electrode shown in Figure 4b including a small amount of nano-powder is significantly improved compared to Figure 4a.
Therefore, according to the present invention, the aspect ratio of the front electrode is improved, and thus the resistance of the front electrode is reduced, and the area capable of absorbing light is widened, thereby improving efficiency of the solar cell.
While the above has been shown and described with respect to preferred embodiments of the present invention, the present invention is not limited to the specific embodiments described above, it is usually in the technical field to which the invention belongs without departing from the spirit of the invention claimed in the claims. Various modifications can be made by those skilled in the art, and these modifications should not be individually understood from the technical spirit or the prospect of the present invention.
1 is a view showing the structure of a solar cell according to an embodiment of the present invention.
2A to 2C are schematic views illustrating a process of forming a front electrode.
3 is a view showing a viscosity change of the front electrode paste according to the rotation of the spindle (RPM).
4A and 4B illustrate a conventional front electrode pattern and a front electrode pattern according to the present invention.
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090134378A KR20110077731A (en) | 2009-12-30 | 2009-12-30 | Solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090134378A KR20110077731A (en) | 2009-12-30 | 2009-12-30 | Solar cell |
Publications (1)
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WO2014157958A1 (en) * | 2013-03-27 | 2014-10-02 | 제일모직 주식회사 | Composition for forming solar cell electrode and electrode produced from same |
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JP2018152620A (en) * | 2013-06-04 | 2018-09-27 | パナソニックIpマネジメント株式会社 | Solar cell |
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WO2014073829A1 (en) * | 2012-11-06 | 2014-05-15 | 한국에너지기술연구원 | Solar cell grid electrode, method for forming grid electrode, and device for forming same |
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