KR20110074237A

KR20110074237A - Electrophoretic display device and method for fabricating the same

Info

Publication number: KR20110074237A
Application number: KR1020090131145A
Authority: KR
Inventors: 오영무
Original assignee: 엘지디스플레이 주식회사
Priority date: 2009-12-24
Filing date: 2009-12-24
Publication date: 2011-06-30

Abstract

The present invention relates to an electrophoretic display device and a method of manufacturing the same, the electrophoretic display device according to the present invention includes a thin film transistor and a lower substrate having pixel electrodes connected to the thin film transistor in a matrix form; An electrophoretic display cell unit adhered to the lower substrate and formed of a first common electrode formed on a polyester substrate and an electrophoretic film adhered to the first common electrode; A second common electrode formed on the back surface of the polyester substrate, a plurality of nanowire patterns formed on the second common electrode and spaced apart from each other, a color filter formed on the second common electrode between the plurality of nanowire patterns; It is characterized in that it comprises a touch panel portion consisting of an upper substrate bonded to the polyester substrate.

Description

Electrophoretic display device and its manufacturing method {ELECTROPHORETIC DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrophoretic display device (EPD), and more particularly, to an electrophoretic display device suitable for a color touch EPD using a piezoelectric device and a manufacturing method thereof. .

In general, an electrophoretic display is an image display device using a phenomenon in which colloidal particles move to either polarity when a pair of electrodes to which a voltage is applied is immersed in a colloidal solution. A wide viewing angle, a high reflectance, and a weather without using a backlight are used. It is expected to be spotlighted as an electric paper because it has characteristics such as ease and low power consumption.

Such an electrophoretic display device has a structure in which an electrophoretic film is interposed between two substrates, and at least one of the two substrates must be transparent to display an image in a reflective mode.

When a pixel electrode is formed on a lower substrate of the two substrates and a voltage is applied to the pixel electrode, charged particles in the electrophoretic film move to the pixel electrode side or to the opposite side, whereby a viewing sheet You can see the image through.

Although not shown, a general electrophoretic display device has a structure in which an upper substrate and a lower substrate on which pixel electrodes are formed are disposed to face each other, and an electrophoretic film is interposed between the two substrates.

Here, the electrophoretic film is composed of a solvent (charged) containing charged pigment particles, and made into a microcapsule by a coacervation method, the microcapsules in a binder (binder) The mixture is formed by coating (coating) or laminating (laminating) the base film.

Here, the pigment particles may be colored in different colors, by adding a pigment of B (Black), W (White) to represent the image, the solvent and the binder is formed of a transparent material so that light can pass through do.

Since the electrophoretic film is surrounded by the microcapsule film, the pigment particles can be prevented from moving in an undesired direction by a field of adjacent pixels, thereby realizing better image quality. In this case, a partition wall may be further provided between adjacent pixels to completely block the parasitic field.

In such a general electrophoretic display, when voltage is applied to the pixel electrode, charged pigment particles are moved to an electrode having a polarity opposite to that of the polarity, and a predetermined image is generated according to reflection of light by the pigment particles. Will be displayed.

On the other hand, when moved toward the polarized electrode of the pigment particles, another image is displayed.

Referring to FIG. 1, an electrophoretic display device according to the prior art is as follows.

1 is a schematic cross-sectional view of an electrophoretic display device according to the related art.

As shown in FIG. 1, an electrophoretic display device according to the related art includes: a lower substrate 101 having a thin film transistor T and a pixel electrode 29 connected to the thin film transistor T in a matrix form; A first common electrode 43 formed on the first polyester substrate 41 adhered to the lower substrate 11 and an electrophoretic film 50 adhered to the first common electrode 43; On the electrophoretic display cell 40 composed of the color filter layer 45 formed on the back surface of the substrate, on the second common electrode 45 formed on the second polyester substrate 61, on the second common electrode 45 And a dot spacer 65 for preventing an upper and lower plate short, and a second common substrate 73 formed on the surface thereof, and being bonded to the second polyester substrate 61. It is configured to include a touch panel 80 composed of an upper substrate (71).

Here, the lower substrate 11 is formed of a flexible film of a material, the first and second polyester substrates (PET; 41, 61), the upper substrate 71 and the first, second, third common The electrodes 43, 63, and 73 are formed of a material through which light can pass.

In addition, a passivation layer 25 is formed on the entire surface of the lower substrate 11 including the thin film transistor T.

In addition, a gate wiring (not shown) for transmitting a scan signal and a data wiring (not shown) for transmitting an image data signal are formed on the lower substrate 11 to actively drive a plurality of thin film transistors.

In this case, the gate wiring and the data wiring cross each other to define pixels, and each pixel is provided with a thin film transistor T and a storage capacitor (not shown) to control the polarity of the voltage applied to the electrodes and to be applied to the electrodes. It serves to store voltage.

In addition, the passivation layer 25 further includes a pixel electrode 29 electrically connected to the thin film transistor T to apply an electric field to the electrophoretic film 50.

In addition, the electrophoretic film 50 is composed of microcapsules 53 in which white particles 55a and black particles 55b are mixed with a solvent 51.

In this case, the white particles 55a and the black particles 55b included in the microcapsule 53 apply a specific voltage to the pixel electrode 29 and accordingly, in the microcapsule 53. The color image is realized through the color filter layer 45 of the first polyester substrate 41.

Although not shown, the first common electrode 43 formed on the first polyester substrate 41 of the electrophoretic display cell 40 may be a TFT common electrode formed on the lower substrate 11 (not shown). The Ag doping portion (not shown) formed in FIG.

In addition, the third common electrode 73 formed on the rear surface of the upper substrate 71 of the touch panel 80 may have an Ag doping portion formed on the second common electrode 63 formed on the second polyester substrate 61. 67).

In this way, the upper substrate 71 of the touch panel 80 is pressed by using a pen or finger 81, and touch is performed by using a voltage difference at a point where contact between the upper and lower electrodes occurs. touch).

However, the electrophoretic display device according to the prior art has the following problems.

In the electrophoretic display device according to the prior art, the technical infrastructure (infra) for the touch implementation of the electrophoretic display device (EPD) has been lacking.

In addition, the electrophoretic display according to the related art requires an additional layer to implement a touch of the EPD, thereby increasing the thickness of the electrophoretic display (EPD) and reducing panel characteristics such as color reproducibility and reflectance. . In particular, in the related art, a common electrode and a dot spacer are stacked on a separate touch panel, that is, a PET substrate, and a common electrode is further formed on the rear surface of the upper substrate bonded to the polyester substrate (PET). Since additional layers are required to implement touch in the EPD, not only the thickness of the entire electrophoretic display device but also the panel characteristics such as color reproduction and reflectance are reduced.

In addition, the electrophoretic display device according to the related art is difficult to implement a touch sensitive technology in units of several millimeters because the thickness of the electrophoretic display device is increased by requiring additional layers to implement the touch of the EPD. .

Accordingly, the present invention has been made to solve the above-mentioned problems according to the prior art, an object of the present invention to provide an electrophoretic display device and a method of manufacturing the touch technology that can be implemented without the addition of a separate layer.

In addition, another object of the present invention is to provide an electrophoretic display device and a method of manufacturing the same that can reduce the thickness of the panel by reducing the layer compared to the existing process, and improve the reflectance.

According to an aspect of the present invention, there is provided an electrophoretic display device including: a lower substrate having a thin film transistor and a pixel electrode connected to the thin film transistor in a matrix form; An electrophoretic display cell unit adhered to the lower substrate and formed of a first common electrode formed on a polyester substrate and an electrophoretic film adhered to the first common electrode; A second common electrode formed on the back surface of the polyester substrate, a plurality of nanowire patterns formed on the second common electrode and spaced apart from each other, a color filter formed on the second common electrode between the plurality of nanowire patterns; It is characterized in that it comprises a touch panel portion consisting of an upper substrate bonded to the polyester substrate.

According to an aspect of the present invention, there is provided an electrophoretic display device including: a lower substrate having a thin film transistor and a pixel electrode connected to the thin film transistor in a matrix form; A plurality of partitions formed on the lower substrate to be spaced apart from each other, an electrophoretic layer filled between the plurality of partitions, and disposed on the partition and the electrophoretic layer, the first and second common electrodes are formed on the upper and lower surfaces An electrophoretic display cell unit made of a polyester substrate; And a plurality of nanowire patterns spaced apart from each other on a second common electrode formed on the back of the polyester substrate, a color filter formed between the plurality of nanowire patterns, and an upper substrate bonded to an upper portion of the polyester substrate. Touch panel unit; characterized in that comprises a.

According to an aspect of the present invention, there is provided a method of manufacturing an electrophoretic display device, including forming a thin film transistor and a pixel electrode connected to the thin film transistor in a matrix form on a lower substrate; Forming a first common electrode on a polyester substrate; Adhering an electrophoretic film on the first common electrode; Forming a second common electrode on the back surface of the polyester substrate; Bonding a polyester substrate to which the electrophoretic film is adhered to the lower substrate; Forming a plurality of nanowire patterns spaced apart from each other on the second common electrode; Forming a color filter on a second common electrode between the plurality of nanowire patterns; And bonding the upper substrate to the polyester substrate.

According to an aspect of the present invention, there is provided a method of manufacturing an electrophoretic display device, including forming a thin film transistor and a pixel electrode connected to the thin film transistor in a matrix form on a lower substrate; Forming a plurality of partition walls spaced apart from each other on the lower substrate on which the thin film transistor and the pixel electrode are formed; Forming an electrophoretic layer between the plurality of partition walls; Bonding a polyester substrate having first and second common electrodes formed on upper and lower surfaces of the electrophoretic layer and the partition wall; Forming a plurality of nanowire patterns spaced apart from each other on the second common electrode; Forming a color filter between the plurality of nanowire patterns; And bonding the upper substrate to the upper portion of the polyester substrate.

According to the electrophoretic display and the manufacturing method thereof according to the present invention has the following effects.

The electrophoretic display device and the method of manufacturing the same according to the present invention can reduce the number of layers compared to the existing process, thereby reducing the thickness of the panel, it is possible to improve the reflectance.

In addition, the electrophoretic display device and the method of manufacturing the same according to the present invention can be used in an electrophoretic display device that can realize a color because a cell of a partition structure can be fabricated using a piezoelectric material pattern of nano material. It is possible.

In addition, the electrophoretic display device and a method of manufacturing the same according to the present invention can implement the electrophoretic display device in which the piezoelectric element is in-cellized, and furthermore, the color electrophoretic display device (color EPD). In this case, the cell gap can be configured to be thin to improve image quality.

Hereinafter, an electrophoretic display device according to an exemplary embodiment of the present invention will be described in detail with reference to the accompanying drawings.

2 is a schematic cross-sectional view of an electrophoretic display device having a touch function according to an embodiment of the present invention.

In the electrophoretic display device according to an exemplary embodiment of the present invention, as shown in FIG. 2, a lower substrate 101 having a thin film transistor T and pixel electrodes 119 connected to the thin film transistor T formed in a matrix form. )and; The first common electrode 173 formed on the first polyester substrate (PET) 171 adhered to the lower substrate 101 and the electrophoretic film 150 adhered to the first common electrode 173. An electrophoretic display cell unit 160; A second common electrode 175 formed on the back surface of the polyester substrate 171, a plurality of nanowire patterns 177 spaced apart from each other on the second common electrode 175, and the plurality of nanowire patterns ( The touch panel unit 180 including the color filters 179a, 179b, and 179c formed on the second common electrode 175 between the upper and lower substrates 181 bonded to the polyester substrate 171 may be formed. It is configured to include.

Here, the lower substrate 101 is made of a flexible film, glass, or metal as a material, and the polyester substrate PET and the first and second common electrodes 173 and 175 are made of light. It is made of a material that can penetrate. In addition, the first and second common electrodes 173 and 175 are formed of a transparent conductive material such as indium tin oxide (ITO), and the first common electrode 173 is formed on the entire surface to flow a Vcom signal.

In addition, the passivation layer 125 is formed on the entire surface of the lower substrate 101 including the thin film transistor T.

In addition, a gate wiring (not shown) for transmitting a scan signal and a data wiring (not shown) for transferring an image data signal are formed on the lower substrate 101 to actively drive a plurality of thin film transistors.

In addition, the passivation layer 125 further includes a pixel electrode 129 electrically connected to the thin film transistor T to apply an electric field to the electrophoretic film 150.

In addition, although not shown in the drawing, the storage capacitor Cst includes a capacitor upper electrode overlapping the capacitor lower electrode with a capacitor lower electrode and a gate insulating layer interposed therebetween, and the thin film transistor is turned on when the image display is implemented. It maintains the voltage charged in the electrophoretic film in the off section serves to prevent the deterioration of image quality due to parasitic capacitance. In this case, the capacitor lower electrode extends to the outside of the active region to receive a signal, and the capacitor upper electrode is connected to the pixel electrode or the drain electrode to receive a signal.

In addition, the electrophoretic film 150 is composed of microcapsules 153 in which white particles 155a and black particles 155b are mixed with a solvent 151.

In this case, the white particles 155a and the black particles 155b included in the microcapsule 153 apply a specific voltage to the pixel electrode 129 and accordingly the inside of the microcapsule 153. The color image is implemented through the red (R), green (G), and blue (B) color filters 179a, 179b, and 179c.

The nanowire pattern 177 is formed of a zinc oxide (ZnO) nanowire material, which is one of piezoelectric materials.

The first common electrode 173 formed on the polyester substrate 171 of the electrophoretic display cell unit 160 may include an Ag doping unit formed on a TFT common electrode (not shown) formed on the lower substrate 101. 131).

In this way, the upper substrate 181 of the touch panel unit 180 is pressed using a pen or a finger (not shown) to use the voltage difference at the point where the contact between the upper and lower electrodes occurs. To implement a touch.

As described above, in the electrophoretic display device according to the present invention, the nanowire pattern 177 may be applied to form a color filter and a touch function on the electrophoretic display cell unit 160. The touch panel and the color can be realized by not forming a separate touch panel structure.

A method of manufacturing an electrophoretic display device according to an embodiment of the present invention having the above configuration will be described with reference to FIGS. 3A to 3D.

3A to 3D are cross-sectional views illustrating a manufacturing process of an electrophoretic display device according to an exemplary embodiment.

As shown in FIG. 3A, a metal film (not shown) is first deposited on a lower substrate 101 made of a flexible metal, plastic, or stainless foil or glass, and then, by a photolithography process and an etching process. The metal film (not shown) is selectively patterned to form a gate wiring (not shown) and a gate electrode 103 branched from the gate wiring (not shown).

In this case, the metal film material may be selected from Al-based metals such as Al and Al alloys, Ag-based metals such as Ag and Ag alloys, and Mo-based metals such as Mo and Mo alloys, Cr, Ti, and Ta. In addition, they may include two membranes of different material properties, that is, the lower layer and the upper layer thereon. Here, the upper layer is made of a low resistivity metal, for example, an Al-based metal or an Ag-based metal so as to reduce signal delay or voltage drop of the gate wiring.

On the other hand, the lower layer may be made of other materials, particularly materials having excellent physical, chemical and electrical contact properties with indium tin oxide (ITO) or indium zinc oxide (IZO), such as Ti, Ta, Cr, and Mo-based metals. Or an example of the combination of the lower layer and the upper layer is a Cr / Al-Nd alloy.

Subsequently, an inorganic insulating material such as silicon nitride (SiNx) and silicon oxide (SiOx) is deposited on the lower substrate 101 including the gate wiring (not shown) and the gate electrode 103 to form a gate insulating film 105. .

Next, although not shown in the drawings, a semiconductor layer (not shown) made of hydrogenated amorphous silicon (hydrogen-nated amorphous silicon) or the like, and silicide or n-type impurities are formed on the gate insulating film 105 at a high concentration. Impurity layers (not shown) made of a material such as doped n + hydrogenated amorphous silicon are sequentially formed.

Subsequently, the impurity layer (not shown) and the semiconductor layer (not shown) are selectively patterned by a photolithography process and an etching process to form an active layer 107 and an ohmic contact layer 109.

Next, a metal material for forming data wiring is deposited on the lower substrate 101 including the active layer 107 and the ohmic contact layer 109 by a sputtering method, and then selectively patterned by a photolithography process and an etching process. A data line (not shown), a source electrode 121 branched from the data line (not shown), and a drain electrode 123 spaced apart from the source electrode 121 by a predetermined distance are formed, respectively.

In this case, as the metal material, an Al-based metal, an Ag-based metal, a Mo-based metal, Cr, Ti, Ta, or other materials may be used, and may be formed in multiple layers.

The data line (not shown) is formed to cross the gate line (not shown), and the source electrode 121 and the drain electrode 123 are formed under the active layer 107 and the gate electrode 103. ) And a thin film transistor (T) which is a switching element. In this case, a channel of the thin film transistor T is formed in the active layer 107 between the source electrode 121 and the drain electrode 123.

Subsequently, an inorganic insulating material or an organic insulating material is deposited on the entire surface of the lower substrate 101 including the data line (not shown) and the source / drain electrodes 121 and 123 to form a protective film 125, and then a photolithography process. And selectively patterning through an etching process to form a drain contact hole 127 exposing a part of the drain electrode 123 of the thin film transistor.

Next, a metal material layer (not shown) made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) is deposited on the passivation layer 125 including the drain contact hole 127 by a sputtering method. After this, the photolithography process and the etching process are selectively removed to form the pixel electrode 129 electrically connected to the drain electrode 123, thereby completing the fabrication of the lower array substrate on the lower substrate 101. In this case, a TFT common electrode (not shown) is also formed when the pixel electrode 129 is formed.

Therefore, when a data voltage is applied to the pixel electrode 129, the pixel electrode 129 and the first common electrode (FIG. 3B) are generated by generating an electric field together with a common electrode (not shown) to which a common voltage is applied. The white particles 155a and the black particles 155b in the electrophoretic film 150 are moved between the red, green, and blue color filters 179a and 179b formed on the upper surface of the polyester substrate 171. , 179c is implemented.

Next, although not shown in the drawing, the lower substrate 101, that is, the mother substrate, on which the plurality of unit cell regions are defined, is cut in units of cell regions.

Subsequently, an Ag dotting unit 131 is formed on a TFT common electrode (not shown) formed in each unit cell region by using an Ag dotting apparatus (not shown) to perform Ag dotting on each unit cell region. .

Next, the electrophoretic film cell unit 160 manufacturing method according to an embodiment of the present invention will be described with reference to FIG. 3B.

As shown in FIG. 3B, first, a common electrode 173 formed of a transparent conductive material such as indium tin oxide (ITO) is formed on a polyester substrate (PET) 171, and the electrophoretic film 150 is formed thereon. ) And a cover film (not shown) thereon. In this case, the electrophoretic film 150 is composed of microcapsules 153 formed of electrophoretic particles 155a and 155b and a solvent 151 and a binder (not shown).

In addition, the electrophoretic particles are composed of white particles 155a reflecting light and black particles 155b absorbing light, and the white particles 155a may be charged with positive charge, and the black particles 155b. May be charged with a negative charge.

Thus, the first common electrode 173 is formed on the polyester substrate (PET) 171, and the electrophoretic film 150 is adhered thereon, and the cover film (not shown) is placed on top of The manufacturing process of the electrophoretic display cell unit 160 is completed. In this case, the first common electrode 173 may be made of a conductive material having durability and corrosion resistance to an external environment, for example, indium tin oxide (ITO) or indium zinc oxide (IZO).

Subsequently, the cover film (not shown) of the electrophoretic film cell unit 160 is attached to the lower substrate 101 of the unit cell by an adhesive (not shown).

Next, although not shown in the drawings, a process of attaching a protective sheet (not shown) to the rear surface of the electrophoretic film cell unit 160 may be performed.

Subsequently, in order to proceed with the process of manufacturing the touch panel unit 180, first, a material similar to the transparent conductive material used when the first common electrode is formed on the back surface of the polyester substrate 171 is deposited by a sputtering method, and then second common. An electrode 175 is formed. As the transparent conductive material, a transparent material including indium tin oxide (ITO) or indium zinc oxide (IZO) is used.

Next, as shown in FIG. 3C, a nanowire layer is deposited on the second common electrode 175 using zinc oxide (ZnO), which is one of piezoelectric materials. After selectively patterning it, the substrate is partially grown vertically by a predetermined height, for example, 5 to 10 μm, to form a plurality of nanowire patterns 177 spaced apart from each other by a predetermined distance. In this case, as the method for growing the nanowire pattern 177, a conventionally known nanowire growth method may be used, and other growth methods may be used.

Subsequently, red (R), green (G), and blue color filters 179a, 179b, and 179c are sequentially formed on the second common electrode 175 between the plurality of nanowire patterns 177.

Then, as shown in Figure 3d, by bonding the upper substrate 181 on top of the polyester substrate 171, the red (R), green (G), blue color filters (179a, 179b, 179c) is formed The manufacturing of the touch panel unit 180 is completed.

In this way, the electrophoretic display and the method of manufacturing the same according to the present invention can reduce the number of layers used in the touch panel as compared to the existing process, thereby reducing the thickness of the panel and improve the reflectance.

In addition, the electrophoretic display device and a method of manufacturing the same according to the present invention can be manufactured using a piezoelectric material pattern of nanomaterials, so that the color filter of the barrier rib structure can be manufactured. Available.

Meanwhile, an electrophoretic display device according to another embodiment of the present invention will be described with reference to FIG. 4.

4 is a schematic cross-sectional view of an electrophoretic display equipped with a touch panel according to another exemplary embodiment.

As shown in FIG. 4, an electrophoretic display device according to another embodiment of the present invention includes a lower substrate in which a thin film transistor T and pixel electrodes 229 connected to the thin film transistor T are formed in a matrix form. 201); A plurality of partitions 231 formed on the lower substrate 201 and spaced apart from each other, an electrophoretic layer 233 filled between the plurality of partitions, and disposed on the electrophoretic layer 233, An electrophoretic display cell unit 240 formed of a polyester substrate (PET) 251 having first and second common electrodes 253 and 255 formed thereon; A plurality of nanowire patterns 257 formed on the second common electrode 255 and spaced apart from each other, color filters 259a, 259b, and 259c formed between the nanowire patterns 257 and the polyester substrate And a touch panel unit 270 formed of an upper substrate 261 bonded to the 251.

Here, the lower substrate 201 uses a flexible film, glass, or metal as a material, and the polyester substrate (PET) 251 and the first and second common electrodes 253 and 255 are made of light. It is made of a material that can penetrate. In addition, the first and second common electrodes 253 and 255 are formed of a transparent conductive material such as indium tin oxide (ITO), and the first common electrode 253 is formed on the entire surface to flow a Vcom signal.

In addition, the passivation layer 225 is formed on the entire surface of the lower substrate 201 including the thin film transistor T.

In addition, a gate wiring (not shown) for transmitting a scan signal and a data wiring (not shown) for transferring an image data signal are formed on the lower substrate 201 to actively drive a plurality of thin film transistors.

In addition, the passivation layer 225 further includes a pixel electrode 229 electrically connected to the thin film transistor T to apply an electric field to the electrophoretic layer 233.

In addition, although not shown in the drawing, the storage capacitor Cst includes a capacitor upper electrode overlapping the capacitor lower electrode with a capacitor lower electrode and a gate insulating layer interposed therebetween, and the thin film transistor is turned on when the image display is implemented. It maintains the voltage charged in the electrophoretic film in the off section serves to prevent the deterioration of image quality due to parasitic capacitance. In this case, the capacitor lower electrode extends outside the active area to receive a signal, and the capacitor upper electrode is connected to the pixel electrode or the drain electrode to receive a signal.

In addition, the electrophoretic layer 233 includes white particles 233a and black particles 233b therein.

In this case, the white particles 233a and the black particles 233b included in the electrophoretic layer 233 apply a specific voltage to the pixel electrode 229, and thus the electrophoretic layer 233 is applied. The image is moved inside, thereby implementing a color image represented by the red (R), green (G), and blue (B) color filters 259a, 259b, and 259c of the polyester substrate (PET) 251.

In addition, the barrier rib 231 may be formed of a zinc oxide (ZnO) nanowire material, which is one of piezoelectric materials, or may be formed of any one of a photosensitive resin, an acrylic resin, a polymer organic material, and a sealant.

The nanowire pattern 257 is formed of a zinc oxide (ZnO) nanowire material, which is one of piezoelectric materials.

In addition, the first common electrode 253 formed on the bottom surface of the PET substrate 251 of the electrophoretic display cell unit 240 may include an Ag doping portion formed on a TFT common electrode (not shown) formed on the lower substrate 201. 241).

In this way, the upper substrate 261 of the touch panel unit 270 is pressed by using a pen or a finger (not shown), and the voltage difference between the upper and lower electrodes is generated by using a voltage difference. It will implement a touch (touch).

On the other hand, as another embodiment of the present invention, when the barrier rib 231 is formed of a barrier rib using nanowire material, the barrier rib 231 is electrically connected to the second common electrode 255 for touch. Since it may be used as a piezoelectric element, the structure of the touch panel unit 270 may be deleted.

As described above, in the electrophoretic display device according to the present invention, the partition wall 231 and the nanowire pattern 257 are applied to the electrophoretic display cell unit 240 and the touch panel unit 270, and thus, separate from each other. Since the touch panel structure is not required, the touch panel function and the color can be realized.

On the other hand, the electrophoretic display device manufacturing method according to an embodiment of the present invention having the above configuration will be described with reference to FIGS. 5A to 5F.

5A to 5F are cross-sectional views illustrating a manufacturing process of an electrophoretic display device according to another exemplary embodiment.

As shown in FIG. 5A, a metal film (not shown) is first deposited on a lower substrate 201 made of a flexible metal material, plastic, or stainless foil or glass, and then, by a photolithography process and an etching process. The metal layer (not shown) is selectively patterned to form a gate wiring (not shown) and a gate electrode 203 branched from the gate wiring (not shown).

Subsequently, an inorganic insulating material such as silicon nitride (SiNx) and silicon oxide (SiOx) is deposited on the lower substrate 201 including the gate wiring (not shown) and the gate electrode 203 to form a gate insulating film 205. .

Next, although not shown in the drawings, a high concentration of a semiconductor layer (not shown) and a silicide or n-type impurity are formed on the gate insulating layer 205, such as a hydrogen-nated amorphous silicon layer. An impurity layer (not shown) made of a material such as n + hydrogenated amorphous silicon doped with is sequentially formed.

Subsequently, the impurity layer (not shown) and the semiconductor layer (not shown) are selectively patterned by a photolithography process and an etching process to form an active layer 207 and an ohmic contact layer 209.

Next, a metal material for forming data wiring is deposited on the lower substrate 201 including the active layer 207 and the ohmic contact layer 209 by a sputtering method, and then selectively patterned by a photolithography process and an etching process. Data lines (not shown), source electrodes 221 branched from the data lines (not shown), and drain electrodes 223 spaced apart from the source electrodes 221 by a predetermined interval are formed, respectively.

The data line (not shown) is formed to cross the gate line (not shown), and the source electrode 221 and the drain electrode 223 are formed under the active layer 207 and the gate electrode 203. ) And a thin film transistor (T) which is a switching element. In this case, a channel of the thin film transistor T is formed in the active layer 207 between the source electrode 221 and the drain electrode 223.

Subsequently, an inorganic insulating material or an organic insulating material is deposited on the lower substrate 201 including the data line (not shown) and the source / drain electrodes 221 and 223 to form a protective film 225, and then photolithography. The drain contact hole 227 exposing a part of the drain electrode 223 of the thin film transistor may be formed by selectively patterning the same through a process and an etching process.

Next, a metal material layer (not shown) made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) is deposited on the passivation layer 225 including the drain contact hole 227 by a sputtering method. After that, it is selectively removed by a photolithography process and an etching process to form a pixel electrode 229 electrically connected to the drain electrode 223, thereby completing fabrication of the lower array substrate on the lower substrate 201. In this case, a TFT common electrode (not shown) is also formed when the pixel electrode 229 is formed.

Accordingly, when a data voltage is applied to the pixel electrode 229, an electric field is generated together with a common electrode (not shown) to which a common voltage is applied, thereby generating the pixel electrode 229 and the first common electrode (see FIG. 5C). White particles 233a and black particles 233b in the electrophoretic layer 233 are moved between the red, green, and blue color filters 259a and 259b formed on the upper surface of the polyester substrate 251. The image of 259c) is implemented.

Subsequently, a zinc oxide (ZnO) nanowire material, which is one of piezoelectric materials, or a photosensitive resin, an acrylic resin, a polymer organic material, or a sealant is coated on the lower substrate 201 to form a barrier material layer (not shown). C). In this case, the barrier material layer (not shown) may be formed using a photo method or a printing method.

Next, as illustrated in FIG. 5B, a plurality of partitions 231 are formed by selectively patterning the partition material layer (not shown) to divide regions where the thin film transistor T and the pixel electrode 229 are formed, respectively. To form. In this case, when the barrier rib 231 is formed using a nanowire material, the barrier rib 231 may be electrically connected to the second common electrode 255 formed in a subsequent process to be used as a piezoelectric element for touch. The manufacturing process of the touch panel unit 270 formed in a subsequent process may be omitted.

Subsequently, as illustrated in FIG. 5C, an electrophoretic material is filled on the lower substrate 201 on which the plurality of partitions 231 are formed to form an electrophoretic layer 233. In this case, as a method of filling the electrophoretic layer 233, die coating, casting, bar coating, dispensing, squeezing, inkjet printing ) And a screen printing process. In addition, the white particles 233a and the black particles 233b charged with different voltages included in the electrophoretic layer 233 move when a specific voltage is applied to the pixel electrode 229. .

Next, an Ag dotting unit 131 is formed on a TFT common electrode (not shown) formed in each unit cell region by using an Ag dotting apparatus (not shown) to perform Ag dotting on each unit cell region. . In this case, the Ag dopant 241 may be formed before the electrophoretic layer 233 is formed.

Subsequently, as shown in FIG. 5D, a transparent conductive material is deposited on the lower surface of the polyester substrate (PET) 251 to form a first common electrode 253.

Next, the process of manufacturing the electrophoretic display cell unit 240 is completed by adhering the polyester substrate 251 on the electrophoretic layer 233. In this case, the first common electrode 253 may be made of a conductive material having durability and corrosion resistance to an external environment, for example, indium tin oxide (ITO) or indium zinc oxide (IZO).

Subsequently, as shown in FIG. 5D, in order to proceed with the process of manufacturing the touch panel unit 270, a material similar to the transparent conductive material used when the first common electrode is formed on the back of the polyester substrate 251 is first formed. The second common electrode 255 is formed by depositing by a sputtering method. As the transparent conductive material, a transparent material including indium tin oxide (ITO) or indium zinc oxide (IZO) is used.

Next, as shown in FIG. 5E, a nanowire layer is deposited on the second common electrode 255 using zinc oxide (ZnO), which is one of piezoelectric materials. This is selectively patterned, and then partially grown vertically by a certain height, for example, 5-10 μm, to form a plurality of nanowire patterns 257 spaced apart from each other by a predetermined distance. In this case, as the method for growing the nanowire pattern 255, a conventional nanowire growth method known in the art may be used, and other growth methods may be used.

Subsequently, red (R), green (G), and blue color filters 259a, 259b, and 259c are sequentially formed on the second common electrode 255 between the plurality of nanowire patterns 257.

Next, as illustrated in FIG. 5F, the upper substrate 261 is bonded to the upper portion of the polyester substrate 251 on which the red, green, and blue color filters 259a, 259b, and 259c are formed. This completes the manufacture of the touch panel unit 270.

In this way, the electrophoretic display device and the method of manufacturing the same according to another embodiment of the present invention can reduce the number of layers used in the touch panel compared to the existing process, thereby reducing the thickness of the panel and improve the reflectance. .

In addition, the electrophoretic display device and the method of manufacturing the same according to the present invention can be implemented because the electrophoretic display cell portion and the touch panel portion of the barrier rib structure can be manufactured using a piezoelectric material pattern of nano material. Available for electrophoretic display devices.

In addition, the electrophoretic display device and a method of manufacturing the same according to the present invention can implement the electrophoretic display device in which the piezoelectric element is in-cellized, and furthermore, the color electrophoretic display device (color EPD). In this case, the cell gap can be made thinner to improve image quality.

On the other hand, with reference to the accompanying drawings, an electrophoretic display device according to another embodiment of the present invention will be described in detail.

6 is a schematic cross-sectional view of an electrophoretic display device having a touch panel structure according to another embodiment of the present invention.

As shown in FIG. 6, an electrophoretic display device according to an embodiment of the present invention includes a lower substrate having a thin film transistor T and a pixel electrode 329 connected to the thin film transistor T formed in a matrix form. 301); The first common electrode 343 formed on the first polyester substrate (PET) 341 adhered to the lower substrate 301 and the electrophoretic film 350 adhered to the first common electrode 343. An electrophoretic display cell unit 340; The second common electrode 363 formed on the rear surface of the second polyester substrate 361 bonded to the first polyester substrate 341 and the plurality of nano-parts formed on the second common electrode 363 to be spaced apart from each other. The touch panel unit 370 includes a wire pattern 365 and color filters 367a, 367b, and 367c formed on the second common electrode 363 between the plurality of nanowire patterns 365. .

Here, the lower substrate 301 is made of a flexible film, glass, or metal as a material, and the first and second polyester substrates PET 341 and 361 and the first and second common electrodes 343. , 363 is formed of a material that can transmit light. In addition, the first and second common electrodes 343 and 363 are formed of a transparent conductive material such as indium tin oxide (ITO), and the first common electrode 343 is formed on the entire surface to flow a Vcom signal.

In addition, a passivation layer 325 is formed on the entire surface of the lower substrate 301 including the thin film transistor T.

In addition, a gate wiring (not shown) for transmitting a scan signal and a data wiring (not shown) for transmitting an image data signal are formed on the lower substrate 301 to actively drive a plurality of thin film transistors.

In addition, the passivation layer 325 further includes a pixel electrode 329 electrically connected to the thin film transistor T to apply an electric field to the electrophoretic film 350.

In addition, the electrophoretic film 350 is composed of microcapsules 353 in which white particles 355a and black particles 355b are mixed with a solvent 351.

In this case, the white particles 355a and the black particles 355b included in the microcapsule 353 may apply a specific voltage to the pixel electrode 329, and accordingly, in the microcapsule 353. Will move.

The nanowire pattern 365 is formed of a zinc oxide (ZnO) nanowire material, which is one of piezoelectric materials.

The first common electrode 343 formed on the first polyester substrate 341 of the electrophoretic display cell unit 340 may include Ag formed on a TFT common electrode (not shown) formed on the lower substrate 301. In contact with the putting portion 331.

In this way, by using a pen or a finger (not shown) to press the second polyester substrate 361 of the touch panel unit 370, the voltage difference at the point where the contact between the upper and lower electrodes occurred By using a touch (touch) is implemented.

As described above, in the electrophoretic display device according to the present invention, by applying the nanowire pattern 365 to the touch panel unit 370, it is possible to implement the touch panel without having to form a separate touch panel structure as in the conventional Done.

A method of manufacturing an electrophoretic display device according to another exemplary embodiment of the present invention having the above configuration will be described below with reference to FIGS. 7A to 7F.

7A to 7F are cross-sectional views illustrating a manufacturing process of an electrophoretic display device according to another exemplary embodiment.

As shown in FIG. 7A, a metal film (not shown) is first deposited on a lower substrate 301 made of a flexible metal material, plastic, or stainless foil or glass, and then, by a photolithography process and an etching process. The metal layer (not shown) is selectively patterned to form a gate wiring (not shown) and a gate electrode 303 branched from the gate wiring (not shown).

Next, although not shown in the drawing, a semiconductor layer (not shown) made of hydrogenated amorphous silicon (hydrogen-nated amorphous silicon) or the like and silicide or n-type impurities are formed on the gate insulating film 305 at a high concentration. Impurity layers (not shown) made of a material such as doped n + hydrogenated amorphous silicon are sequentially formed.

Subsequently, the impurity layer (not shown) and the semiconductor layer (not shown) are selectively patterned by a photolithography process and an etching process to form an active layer 307 and an ohmic contact layer 309.

Next, a metal material for forming data wirings is deposited on the lower substrate 301 including the active layer 307 and the ohmic contact layer 309 by sputtering, and then selectively patterned by a photolithography process and an etching process. Data lines (not shown), source electrodes 321 branched from the data lines (not shown), and drain electrodes 323 spaced apart from the source electrodes 321 by a predetermined interval are formed, respectively.

The data line (not shown) is formed to cross the gate line (not shown), and the source electrode 321 and the drain electrode 323 are formed under the active layer 307 and the gate electrode 303. ) And a thin film transistor (T) which is a switching element. In this case, a channel of the thin film transistor T is formed in the active layer 307 between the source electrode 321 and the drain electrode 323.

Subsequently, an inorganic insulating material or an organic insulating material is deposited on the entire surface of the lower substrate 301 including the data line (not shown) and the source / drain electrodes 321 and 323 to form a protective film 325 and then a photolithography process. And selectively patterning through an etching process to form a drain contact hole 327 exposing a part of the drain electrode 323 of the thin film transistor.

Then, a metal material layer (not shown) made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) is deposited on the passivation layer 325 including the drain contact hole 327 by a sputtering method. After that, it is selectively removed by a photolithography process and an etching process to form a pixel electrode 329 electrically connected to the drain electrode 323, thereby completing fabrication of the lower array substrate on the lower substrate 301. In this case, a TFT common electrode (not shown) is also formed when the pixel electrode 329 is formed.

Therefore, when a data voltage is applied to the pixel electrode 329, the pixel electrode 329 and the first common electrode (FIG. 7B) are generated by generating an electric field together with a common electrode (not shown) to which a common voltage is applied. The white particles 355a and the black particles 355b in the electrophoretic film 350 are moved between each other.

Subsequently, an Ag doping portion is formed on the TFT common electrode (not shown) formed in each unit cell region of the lower substrate 301 by using an Ag dotting apparatus (not shown) to perform Ag dotting on each unit cell region. 331 is formed.

Next, an electrophoretic film cell unit 340 manufacturing method according to another embodiment of the present invention will be described with reference to FIG. 7B.

As shown in FIG. 7B, first, a first common electrode 343 made of a transparent conductive material such as indium tin oxide (ITO) is formed on a first polyester substrate (PET) 341, and the electric A gluing film 350 is adhered, and a cover film (not shown) is adhered thereto. In this case, the electrophoretic film 350 is composed of a microcapsule 353 formed of electrophoretic particles 355a and 355b and a solvent 351, and a binder (not shown).

In addition, the electrophoretic particles are composed of white particles 355a reflecting light and black particles 355b absorbing light, and the white particles 355a may be charged with positive charge, and the black particles 355b. May be charged with a negative charge.

Thus, by forming a first common electrode (343) on the first polyester substrate (PET) 341, the electrophoretic film 350 is bonded thereon, by placing a cover film (not shown) thereon The electrophoretic display cell unit 340 is manufactured. In this case, the first common electrode 343 may be made of a conductive material having durability and corrosion resistance to an external environment, for example, indium tin oxide (ITO) or indium zinc oxide (IZO).

Subsequently, the cover film (not shown) of the electrophoretic display cell unit 340 is attached to the lower substrate 301 of the unit cell by an adhesive (not shown).

Next, although not shown in the drawings, a process of attaching a protective sheet (not shown) to the rear surface of the electrophoretic display cell unit 340 may be performed.

Subsequently, in order to proceed with the process of manufacturing the touch panel unit 370, first, a transparent conductive material is deposited on the rear surface of the second polyester substrate 361 by sputtering to form a second common electrode 363. As the transparent conductive material, a transparent material including indium tin oxide (ITO) or indium zinc oxide (IZO) is used.

Next, as shown in FIG. 7D, a nanowire layer is deposited on the second common electrode 363 using zinc oxide (ZnO), which is one of piezoelectric materials. This is selectively patterned, and then partially grown vertically by a certain height, for example, 5-10 μm, to form a plurality of nanowire patterns 365 spaced apart from each other by a predetermined distance. In this case, as a method of growing the nanowire pattern 365, a conventional nanowire growth method known in the art may be used, and other growth methods may be used.

Subsequently, as shown in FIG. 7E, red (R), green (G), and blue color filters 367a, 367b, and 367c are disposed on the second common electrode 363 between the plurality of nanowire patterns 365. By sequentially forming, the manufacturing of the touch panel unit 370 is completed.

Next, as shown in FIG. 7F, a second polyester substrate 361 having the red (R), green (G), and blue color filters 367a, 367b, and 367c is formed on the electrophoretic display cell unit 340. ) The manufacturing of the electrophoretic display device is completed by adhering to the upper part.

In addition, the electrophoretic display device and the method of manufacturing the same according to the present invention can be applied to a piezoelectric material pattern, which is a nano material, in a touch panel part having a partition structure or an electrophoretic display cell part, and in some cases, nano The piezoelectric element material pattern, which is a material, may be simultaneously applied to the touch panel unit having the partition structure and the electrophoretic display cell unit.

Although the preferred embodiments of the present invention have been described in detail above, those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom.

Accordingly, the scope of the present invention is not limited thereto, but various modifications and improvements of those skilled in the art using the basic concept of the present invention as defined in the following claims are also within the scope of the present invention.

4 is a schematic cross-sectional view of an electrophoretic display device having a touch function according to another exemplary embodiment of the present invention.

5A through 5F are cross-sectional views illustrating a manufacturing process of an electrophoretic display device according to another exemplary embodiment.

6 is a schematic cross-sectional view of an electrophoretic display device having a touch function according to another embodiment of the present invention.

*** Explanation of symbols for the main parts of the drawing ***

101: lower substrate 103: gate electrode

105: gate insulating film 107: active layer

109: ohmic contact layer 121: source electrode

123: drain electrode 125: protective film

127: drain contact hole 129: pixel electrode

131: Ag dotting unit 150: electrophoretic film

151 solvent 153 microcapsules

155a: white particles 155b: black particles

160: electrophoresis display cell 171: polyester substrate (PET)

173: first common electrode 175: second common electrode

177: nanowire pattern 179a: red color filter

179b: Green Color Filter 179c: Blue Color Filter

180: touch panel unit 181: upper substrate

Claims

A lower substrate having a thin film transistor and pixel electrodes connected to the thin film transistor in a matrix form;

An electrophoretic display cell unit adhered to the lower substrate and formed of a first common electrode formed on a polyester substrate and an electrophoretic film adhered to the first common electrode; And

A second common electrode formed on the back surface of the polyester substrate, a plurality of nanowire patterns formed on the second common electrode and spaced apart from each other, a color filter formed on the second common electrode between the plurality of nanowire patterns; An electrophoretic display device comprising a touch panel portion consisting of an upper substrate bonded to the polyester substrate.

The electrophoretic display of claim 1, wherein the nanowire pattern is formed of a zinc oxide material which is a piezoelectric material.

The electrophoretic display of claim 1, wherein the lower substrate is made of flexible plastic, metal, or glass.

The electrophoretic display of claim 1, wherein the first and second common electrodes select any one of a transparent conductive material including ITO and IZO.

The electrophoretic display of claim 1, wherein the upper substrate is a polyester substrate.

A plurality of partitions formed on the lower substrate to be spaced apart from each other, an electrophoretic layer filled between the plurality of partitions, and disposed on the partition and the electrophoretic layer, the first and second common electrodes are formed on the upper and lower surfaces An electrophoretic display cell unit consisting of a PET substrate; And

A touch panel unit including a plurality of nanowire patterns formed on the second common electrode formed on the rear surface of the PET substrate, spaced apart from each other, a color filter formed between the plurality of nanowire patterns, and an upper substrate bonded to the upper portion of the PET substrate. Electrophoretic display device characterized in that it comprises a.

The electrophoretic display of claim 6, wherein the nanowire pattern is made of a zinc oxide material which is a piezoelectric material.

The electrophoretic display device according to claim 6, wherein the barrier rib is made of one of a zinc oxide material, a photosensitive resin, an acrylic resin, a polymer organic material, and a sealant.

The electrophoretic display of claim 6, wherein the lower substrate is made of flexible plastic, metal, or glass.

The electrophoretic display of claim 6, wherein the first and second common electrodes are selected from one of transparent conductive materials including ITO and IZO.

Forming a thin film transistor and a pixel electrode connected to the thin film transistor in a matrix form on a lower substrate;

Forming a first common electrode on the PET substrate;

Adhering an electrophoretic film on the first common electrode;

Forming a second common electrode on the back surface of the PET substrate;

Bonding the PET substrate to which the electrophoretic film is adhered on the lower substrate;

Forming a plurality of nanowire patterns spaced apart from each other on the second common electrode;

Forming a color filter on a second common electrode between the plurality of nanowire patterns; And

And bonding an upper substrate to the PET substrate.

The method of claim 11, wherein the nanowire pattern is formed of a zinc oxide material which is a piezoelectric material.

The method of claim 11, wherein the lower substrate is made of flexible plastic, metal, or glass.

The method of claim 11, wherein the first and second common electrodes are selected from a transparent conductive material including ITO and IZO.

Forming a plurality of partition walls spaced apart from each other on the lower substrate on which the thin film transistor and the pixel electrode are formed;

Forming an electrophoretic layer between the plurality of partition walls;

Bonding PET substrates having first and second common electrodes formed on upper and lower surfaces of the electrophoretic layer and the partition wall;

Forming a color filter between the plurality of nanowire patterns; And

And bonding an upper substrate to the upper portion of the PET substrate.

The method of claim 15, wherein the nanowire pattern is made of a zinc oxide material which is a piezoelectric element material.

The method of claim 15, wherein the barrier rib is made of one of a zinc oxide material, a photosensitive resin, an acrylic resin, a polymer organic material, and a sealant.

The method of claim 15, wherein the lower substrate is made of flexible plastic, metal, or glass.

The method of claim 15, wherein the first and second common electrodes select any one of transparent conductive materials including ITO and IZO.