KR20110074146A - Positive photoresist composition for insulation layer - Google Patents
Positive photoresist composition for insulation layer Download PDFInfo
- Publication number
- KR20110074146A KR20110074146A KR1020090131033A KR20090131033A KR20110074146A KR 20110074146 A KR20110074146 A KR 20110074146A KR 1020090131033 A KR1020090131033 A KR 1020090131033A KR 20090131033 A KR20090131033 A KR 20090131033A KR 20110074146 A KR20110074146 A KR 20110074146A
- Authority
- KR
- South Korea
- Prior art keywords
- group
- ether
- methyl
- resin composition
- ethylene glycol
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 title abstract description 3
- 238000009413 insulation Methods 0.000 title description 4
- 239000000178 monomer Substances 0.000 claims abstract description 28
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000011347 resin Substances 0.000 claims abstract description 23
- 229920005989 resin Polymers 0.000 claims abstract description 23
- 239000011342 resin composition Substances 0.000 claims abstract description 19
- 239000003960 organic solvent Substances 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims abstract description 8
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 26
- -1 1,2-naphthoquinone diazide sulfonic acid ester Chemical class 0.000 claims description 20
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 12
- 125000003545 alkoxy group Chemical group 0.000 claims description 12
- 125000002947 alkylene group Chemical group 0.000 claims description 11
- 125000000732 arylene group Chemical group 0.000 claims description 9
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 125000003118 aryl group Chemical group 0.000 claims description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical group CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 6
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052736 halogen Inorganic materials 0.000 claims description 6
- 150000002367 halogens Chemical group 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 6
- 150000001282 organosilanes Chemical class 0.000 claims description 6
- 239000003504 photosensitizing agent Substances 0.000 claims description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 5
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 claims description 5
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 5
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 5
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 5
- OJVAMHKKJGICOG-UHFFFAOYSA-N 2,5-hexanedione Chemical compound CC(=O)CCC(C)=O OJVAMHKKJGICOG-UHFFFAOYSA-N 0.000 claims description 4
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 claims description 4
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 claims description 4
- SYBYTAAJFKOIEJ-UHFFFAOYSA-N 3-Methylbutan-2-one Chemical compound CC(C)C(C)=O SYBYTAAJFKOIEJ-UHFFFAOYSA-N 0.000 claims description 4
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims description 4
- HCFAJYNVAYBARA-UHFFFAOYSA-N 4-heptanone Chemical compound CCCC(=O)CCC HCFAJYNVAYBARA-UHFFFAOYSA-N 0.000 claims description 4
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 claims description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 4
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims description 4
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 claims description 4
- GAEKPEKOJKCEMS-UHFFFAOYSA-N gamma-valerolactone Chemical compound CC1CCC(=O)O1 GAEKPEKOJKCEMS-UHFFFAOYSA-N 0.000 claims description 4
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 claims description 4
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 claims description 4
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 claims description 4
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 claims description 4
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 claims description 4
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 4
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 4
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- LEEANUDEDHYDTG-UHFFFAOYSA-N 1,2-dimethoxypropane Chemical compound COCC(C)OC LEEANUDEDHYDTG-UHFFFAOYSA-N 0.000 claims description 2
- GDXHBFHOEYVPED-UHFFFAOYSA-N 1-(2-butoxyethoxy)butane Chemical compound CCCCOCCOCCCC GDXHBFHOEYVPED-UHFFFAOYSA-N 0.000 claims description 2
- QMGJMGFZLXYHCR-UHFFFAOYSA-N 1-(2-butoxypropoxy)butane Chemical compound CCCCOCC(C)OCCCC QMGJMGFZLXYHCR-UHFFFAOYSA-N 0.000 claims description 2
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 claims description 2
- JRRDISHSXWGFRF-UHFFFAOYSA-N 1-[2-(2-ethoxyethoxy)ethoxy]-2-methoxyethane Chemical compound CCOCCOCCOCCOC JRRDISHSXWGFRF-UHFFFAOYSA-N 0.000 claims description 2
- CNJRPYFBORAQAU-UHFFFAOYSA-N 1-ethoxy-2-(2-methoxyethoxy)ethane Chemical compound CCOCCOCCOC CNJRPYFBORAQAU-UHFFFAOYSA-N 0.000 claims description 2
- GNFIHZDKQDJZBM-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate;1-methoxypropan-2-yl acetate Chemical compound COCC(C)OC(C)=O.CCOCC(C)OC(C)=O GNFIHZDKQDJZBM-UHFFFAOYSA-N 0.000 claims description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 2
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 claims description 2
- DMFAHCVITRDZQB-UHFFFAOYSA-N 1-propoxypropan-2-yl acetate Chemical compound CCCOCC(C)OC(C)=O DMFAHCVITRDZQB-UHFFFAOYSA-N 0.000 claims description 2
- JDSQBDGCMUXRBM-UHFFFAOYSA-N 2-[2-(2-butoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCOC(C)COC(C)COC(C)CO JDSQBDGCMUXRBM-UHFFFAOYSA-N 0.000 claims description 2
- PRBXPAHXMGDVNQ-UHFFFAOYSA-N 2-[2-(2-hydroxyethoxy)ethoxy]acetic acid Chemical compound OCCOCCOCC(O)=O PRBXPAHXMGDVNQ-UHFFFAOYSA-N 0.000 claims description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 claims description 2
- BYVKCQBOHJQWIO-UHFFFAOYSA-N 2-ethoxyethyl propanoate Chemical compound CCOCCOC(=O)CC BYVKCQBOHJQWIO-UHFFFAOYSA-N 0.000 claims description 2
- VAHNPAMCADTGIO-UHFFFAOYSA-N 2-methoxyethyl propanoate Chemical compound CCC(=O)OCCOC VAHNPAMCADTGIO-UHFFFAOYSA-N 0.000 claims description 2
- JWUJQDFVADABEY-UHFFFAOYSA-N 2-methyltetrahydrofuran Chemical compound CC1CCCO1 JWUJQDFVADABEY-UHFFFAOYSA-N 0.000 claims description 2
- MQWCXKGKQLNYQG-UHFFFAOYSA-N 4-methylcyclohexan-1-ol Chemical compound CC1CCC(O)CC1 MQWCXKGKQLNYQG-UHFFFAOYSA-N 0.000 claims description 2
- VGVHNLRUAMRIEW-UHFFFAOYSA-N 4-methylcyclohexan-1-one Chemical compound CC1CCC(=O)CC1 VGVHNLRUAMRIEW-UHFFFAOYSA-N 0.000 claims description 2
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 claims description 2
- XOBKSJJDNFUZPF-UHFFFAOYSA-N Methoxyethane Chemical compound CCOC XOBKSJJDNFUZPF-UHFFFAOYSA-N 0.000 claims description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 claims description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 2
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000006116 polymerization reaction Methods 0.000 claims description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 2
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 claims description 2
- 239000008096 xylene Substances 0.000 claims description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims 1
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical class CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 abstract description 26
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 24
- 239000004925 Acrylic resin Substances 0.000 abstract description 4
- 229920000178 Acrylic resin Polymers 0.000 abstract description 4
- 230000000379 polymerizing effect Effects 0.000 abstract description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 abstract 2
- 230000036211 photosensitivity Effects 0.000 abstract 2
- ALVGSDOIXRPZFH-UHFFFAOYSA-N [(1-diazonioimino-3,4-dioxonaphthalen-2-ylidene)hydrazinylidene]azanide Chemical compound C1=CC=C2C(=N[N+]#N)C(=NN=[N-])C(=O)C(=O)C2=C1 ALVGSDOIXRPZFH-UHFFFAOYSA-N 0.000 abstract 1
- 150000002148 esters Chemical class 0.000 abstract 1
- 239000010408 film Substances 0.000 description 19
- 239000011229 interlayer Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 239000003054 catalyst Substances 0.000 description 5
- 238000006482 condensation reaction Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- WWZKQHOCKIZLMA-UHFFFAOYSA-N Caprylic acid Natural products CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- 239000003377 acid catalyst Substances 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000012948 isocyanate Chemical group 0.000 description 3
- 150000002513 isocyanates Chemical group 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- DCFKHNIGBAHNSS-UHFFFAOYSA-N chloro(triethyl)silane Chemical compound CC[Si](Cl)(CC)CC DCFKHNIGBAHNSS-UHFFFAOYSA-N 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 239000003456 ion exchange resin Substances 0.000 description 2
- 229920003303 ion-exchange polymer Polymers 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- FBUKVWPVBMHYJY-UHFFFAOYSA-N nonanoic acid Chemical compound CCCCCCCCC(O)=O FBUKVWPVBMHYJY-UHFFFAOYSA-N 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- DCALJVULAGICIX-UHFFFAOYSA-N 1-propylpyrrolidin-2-one Chemical compound CCCN1CCCC1=O DCALJVULAGICIX-UHFFFAOYSA-N 0.000 description 1
- XGMDYIYCKWMWLY-UHFFFAOYSA-N 2,2,2-trifluoroethanesulfonic acid Chemical compound OS(=O)(=O)CC(F)(F)F XGMDYIYCKWMWLY-UHFFFAOYSA-N 0.000 description 1
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical group CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 1
- 239000005456 alcohol based solvent Substances 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- GONOPSZTUGRENK-UHFFFAOYSA-N benzyl(trichloro)silane Chemical compound Cl[Si](Cl)(Cl)CC1=CC=CC=C1 GONOPSZTUGRENK-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- ACTAPAGNZPZLEF-UHFFFAOYSA-N chloro(tripropyl)silane Chemical compound CCC[Si](Cl)(CCC)CCC ACTAPAGNZPZLEF-UHFFFAOYSA-N 0.000 description 1
- KQIADDMXRMTWHZ-UHFFFAOYSA-N chloro-tri(propan-2-yl)silane Chemical compound CC(C)[Si](Cl)(C(C)C)C(C)C KQIADDMXRMTWHZ-UHFFFAOYSA-N 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N dimethyl sulfoxide Natural products CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- BTZNPZMHENLISZ-UHFFFAOYSA-N fluoromethanesulfonic acid Chemical compound OS(=O)(=O)CF BTZNPZMHENLISZ-UHFFFAOYSA-N 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 125000004356 hydroxy functional group Chemical group O* 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 125000005647 linker group Chemical group 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N n-hexanoic acid Natural products CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- WSGCRAOTEDLMFQ-UHFFFAOYSA-N nonan-5-one Chemical compound CCCCC(=O)CCCC WSGCRAOTEDLMFQ-UHFFFAOYSA-N 0.000 description 1
- 125000002868 norbornyl group Chemical group C12(CCC(CC1)C2)* 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 229960002969 oleic acid Drugs 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 125000004817 pentamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 125000001792 phenanthrenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C=CC12)* 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical group CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 1
- 125000001725 pyrenyl group Chemical group 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 229960004274 stearic acid Drugs 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
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Abstract
Description
본 발명은 절연막용 양성 감광성 수지 조성물에 관한 것이다. 보다 상세하게는, 각종 전자소자에 사용되는 절연막을 포토리소그래피법을 사용하여 제조하는데 사용될 수 있는 양성 감광성 수지 조성물에 관한 것이다.The present invention relates to a positive photosensitive resin composition for an insulating film. More specifically, the present invention relates to a positive photosensitive resin composition which can be used to manufacture insulating films used in various electronic devices using photolithography.
최근 액정 표시장치 등의 평면 표시장치나 터치스크린 장치 등 전자제품의 제조 기술이 발전하면서 제품의 소형화, 박형화가 요구되고 있는 실정이다. 제품의 소형화, 박형화를 위해서는 제품 내부 소자의 집적도는 필수적으로 증가하게 되고, 이에 따라 소자 내 층간 절연막의 성능 향상이 더욱 요구되고 있다.Recently, as the manufacturing technology of electronic products such as flat panel display devices such as liquid crystal display devices and touch screen devices is developed, miniaturization and thinning of products are required. In order to miniaturize and thin a product, the degree of integration of the internal device of the product is essentially increased, and accordingly, the performance improvement of the interlayer insulating film in the device is required.
일반적으로 액정 디스플레이의 제조에 있어서 박막 트랜지스터의 절연막 형성을 위한 종래의 일반적인 공정은, 플라즈마 화학증착(plasma chemical vapor deposition, PCVD) 처리를 실행하여 절연막을 형성하고, 패턴을 형성하기 위해 또 다시 포토레지스트를 사용하여 포토리소그래피 공정을 진행하여야 하는 문제점을 갖고 있다. In general, in the manufacture of a liquid crystal display, a conventional general process for forming an insulating film of a thin film transistor is performed by performing plasma chemical vapor deposition (PCVD) processing to form an insulating film and again forming a photoresist to form a pattern. There is a problem that the photolithography process must be performed using.
이러한 문제점을 극복하기 위해 층간 절연막용 감광성 재료의 개발이 행해지 게 되었다. 특히, 액정표시장치에 있어서는, 픽셀 전극과 게이트/드레인 배선과 사이의 절연 및 디바이스(device) 평탄화를 위해 사용되는 층간 절연막에 컨택홀(contact hole)을 형성할 필요가 있기 때문에, 양성(positive type)의 감광특성을 갖는 층간 절연막용 감광성 재료가 요구된다. In order to overcome this problem, development of a photosensitive material for an interlayer insulating film has been carried out. In particular, in a liquid crystal display device, since a contact hole must be formed in an interlayer insulating film used for insulation between the pixel electrode and the gate / drain wiring and device planarization, a positive type is required. There is a need for a photosensitive material for an interlayer insulating film having a photosensitive characteristic.
또한, 층간 절연막용 감광성 재료에는, 평면 표시장치, 반도체 장치 등의 제조 프로세스상 적어도 1주 이상의 실온 보존 안정성이 필요하다. 또, 액정표시장치에 있어서 층간 절연막에는 가시 영역에서의 투과율이 98% 이상과 투명성이 높고 유전율이 3.5이하인 것이 필요로 한다. 특별히 액정표시장치에서는 근래 대형화, 고정밀화가 나아가고 있고, 이에 수반하는 신규 제조공정에 적용하기 위해 350℃ 이상의 내열성을 가지는 층간 절연막이 요구된다. In addition, the photosensitive material for an interlayer insulation film requires at least one week or more of room temperature storage stability in the manufacturing process of flat panel display devices, semiconductor devices, and the like. In the liquid crystal display device, the interlayer insulating film needs to have a transmittance of 98% or more in the visible region, high transparency, and a dielectric constant of 3.5 or less. In particular, liquid crystal displays have recently been enlarged in size and high in precision, and require an interlayer insulating film having heat resistance of 350 ° C. or higher in order to be applied to a new manufacturing process.
현재 층간 절연막용 감광성 재료로서는 일반적으로 알칼리 현상액에 가용인 감광성의 아크릴 수지 조성물이 사용되고 있다. 하지만, 아크릴 수지 조성물로 구성된 층간 절연막은 투명성이 높지만, 내열성이 250℃ 전후로 충분하지 않아 액정표시장치 등의 제조공정에 적용시 문제를 야기한다.Currently, as a photosensitive material for an interlayer insulation film, the photosensitive acrylic resin composition soluble generally in alkaline developing solution is used. However, although the interlayer insulating film made of an acrylic resin composition has high transparency, heat resistance is not sufficient around 250 ° C., which causes problems when applied to manufacturing processes such as liquid crystal displays.
따라서 본 발명이 해결하고자 하는 과제는, 유전율이 낮고 수계현상이 가능하여 패턴 형성이 용이하며 투명성이 높을 뿐만 아니라, 종래 절연막에 비해 특히 내열성이 우수한 양성 감광성 수지 조성물 및 이로부터 절연막을 제공하는 것이다.Accordingly, the problem to be solved by the present invention is to provide a positive photosensitive resin composition and an insulating film therefrom, which have a low dielectric constant and are capable of aqueous development, are easy to form patterns, have high transparency, and are particularly excellent in heat resistance compared to conventional insulating films.
상기 과제를 해결하기 위하여, 본 발명의 절연막용 양성 감광성 수지 조성물은, 하기 화학식 1로 표시되는 유기실란 제1 단량체 및 하기 화학식 2로 표시되는 유기실란 제2 단량체가 중합하여 형성되는 실록산 수지; 1,2-나프토퀴논 디아지드 술폰산 에스테르 감광제; 및 유기용매를 포함한다:In order to solve the above problems, the positive photosensitive resin composition for an insulating film of the present invention is a siloxane resin formed by polymerization of the organosilane first monomer represented by the following formula (1) and the organosilane second monomer represented by the formula (2); 1,2-naphthoquinone diazide sulfonic acid ester photosensitizer; And organic solvents:
상기 화학식 1에서,In Chemical Formula 1,
X는 탄소수 1 내지 7의 알콕시기, 할로겐, 이소시아네이트 또는 하이드록실기로서, 분자 내 복수의 X는 서로 동일하거나 다르고,X is an alkoxy group, halogen, isocyanate or hydroxyl group having 1 to 7 carbon atoms, and a plurality of X in the molecule are the same or different from each other,
A는 탄소수 1 내지 12의 직쇄상 또는 분지상의 알킬렌기, 탄소수 6 내지 12의 아릴렌기 또는 탄소수 7 내지 12인, 아릴기로 치환된 알킬렌기, 알킬기로 치환된 아릴렌기, 또는 알킬렌기와 아릴렌기가 연결된 기이고,A is a linear or branched alkylene group having 1 to 12 carbon atoms, an arylene group having 6 to 12 carbon atoms or an alkylene group substituted with an aryl group having 7 to 12 carbon atoms, an arylene group substituted with an alkyl group, or an alkylene group and arylene Is the connected group,
R1은 수소, 메틸기, 에틸기, n-프로필기, 이소프로필기, n-부틸기, 이소부틸기 또는 tert-부틸기이며,R 1 is hydrogen, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group or tert-butyl group,
상기 화학식 2에서,In Chemical Formula 2,
X는 탄소수 1 내지 7의 알콕시기, 할로겐, 이소시아네이트기 또는 하이드록실기로서, 분자 내 복수의 X는 서로 동일하거나 다르고,X is an alkoxy group, halogen, isocyanate group or hydroxyl group having 1 to 7 carbon atoms, and a plurality of X in the molecule are the same or different from each other,
R2는 수소, 탄소수 1 내지 20의 직쇄상, 분지상 또는 환상의 지방족 알킬기, 또는 탄소수 6 내지 20의 아릴기이고,R 2 is hydrogen, a linear, branched or cyclic aliphatic alkyl group having 1 to 20 carbon atoms, or an aryl group having 6 to 20 carbon atoms,
n은 0 내지 3인 정수이며, n=3인 경우는 n이 3이 아닌 단량체와 병용된다.n is an integer of 0-3, and when n = 3, it is used together with the monomer whose n is not 3.
제1 단량체로부터 형성되는 반복단위의 함량은 실록산 수지 전체 100 중량%에 대하여 10 내지 90 중량%인 것이 바람직하다.The content of the repeating unit formed from the first monomer is preferably 10 to 90% by weight based on 100% by weight of the total siloxane resin.
선택적으로, 상기 제2 단량체는 서로 다른 2종 이상의 제2 단량체를 포함할 수 있다.Optionally, the second monomer may comprise two or more different second monomers.
본 발명에 있어서, 감광제의 함량은 실록산 수지 전체 중량 100 중량부에 대하여 1 내지 25 중량부인 것이 바람직하며, 5 내지 25 중량부인 것이 보다 바람직하다.In the present invention, the content of the photosensitive agent is preferably 1 to 25 parts by weight, and more preferably 5 to 25 parts by weight based on 100 parts by weight of the total weight of the siloxane resin.
본 발명에 있어서, 유기용매의 함량은 감광성 수지 조성물의 고형분 전체 100 중량부에 대하여, 10 내지 80 중량부일 수 있으나, 이에 한정되는 것은 아니다.In the present invention, the content of the organic solvent may be 10 to 80 parts by weight based on 100 parts by weight of the total solids of the photosensitive resin composition, but is not limited thereto.
본 발명에 따르면, 알칼리 수용액에 수계현상이 가능하고, 기존 아크릴 수지 절연막에 비해 현상성, 투명성, 내균열성, 특히 내열성이 우수한 액정표시소자 및 터치스크린용 절연막 제조에 사용될 수 있다. According to the present invention, aqueous development is possible in an aqueous alkali solution, and can be used for manufacturing an insulating film for a liquid crystal display device and a touch screen having excellent developability, transparency, crack resistance, and particularly heat resistance compared to an existing acrylic resin insulating film.
이하, 본 발명을 상세히 설명하기로 한다. 본 명세서 및 청구범위에 사용된 용어나 단어는 통상적이거나 사전적인 의미로 한정해서 해석되어서는 아니 되며, 발명자는 그 자신의 발명을 가장 최선의 방법으로 설명하기 위해 용어의 개념을 적절하게 정의할 수 있다는 원칙에 입각하여 본 발명의 기술적 사상에 부합하는 의미와 개념으로 해석되어야만 한다.Hereinafter, the present invention will be described in detail. The terms or words used in this specification and claims are not to be construed as limiting in their usual or dictionary meanings, and the inventors may appropriately define the concept of terms in order to best explain their invention in the best way possible. It should be interpreted as meaning and concept corresponding to the technical idea of the present invention based on the principle that the present invention.
본 발명의 절연막용 양성 감광성 수지 조성물이 포함하는 실록산 수지는 하기 화학식 1로 표시되는 유기실란 제1 단량체 및 하기 화학식 2로 표시되는 유기실란 제2 단량체를 중합하여 형성할 수 있다. The siloxane resin contained in the positive photosensitive resin composition for an insulating film of the present invention may be formed by polymerizing an organosilane first monomer represented by the following formula (1) and an organosilane second monomer represented by the following formula (2).
상기 실록산 수지를 형성하는 제1 단량체는 링커(A)에 의해 연결된 알콕시기를 갖는 실란 화합물로서 실록산 수지가 알칼리 수용액에 용해가 가능하도록 하는 기능을 하며, 하기 하학식 1로 표시된다. The first monomer forming the siloxane resin is a silane compound having an alkoxy group connected by a linker (A), and functions to allow the siloxane resin to be dissolved in an aqueous alkali solution, and is represented by Equation 1 below.
[화학식 1][Formula 1]
상기 화학식 1에서,In Chemical Formula 1,
X는 탄소수 1 내지 7의 알콕시기, 할로겐, 이소시아네이트기 또는 하이드록실기로서, 분자 내 복수의 X는 서로 동일하거나 다르고,X is an alkoxy group, halogen, isocyanate group or hydroxyl group having 1 to 7 carbon atoms, and a plurality of X in the molecule are the same or different from each other,
A는 탄소수 1 내지 12의 직쇄상 또는 분지상의 알킬렌기, 탄소수 6 내지 12의 아릴렌기 또는 탄소수 7 내지 12인, 아릴기로 치환된 알킬렌기, 알킬기로 치환된 아릴렌기, 또는 알킬렌기와 아릴렌기가 연결된 기이고,A is a linear or branched alkylene group having 1 to 12 carbon atoms, an arylene group having 6 to 12 carbon atoms or an alkylene group substituted with an aryl group having 7 to 12 carbon atoms, an arylene group substituted with an alkyl group, or an alkylene group and arylene Is the connected group,
R1은 수소, 메틸기, 에틸기, n-프로필기, 이소프로필기, n-부틸기, 이소부틸기 또는 tert-부틸기이다.R 1 is hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl or tert-butyl.
상기 A의 구체적인 예로는, 탄소수 1 내지 12의 직쇄상의 알킬렌기로서, 메틸렌기, 에틸렌기, 프로필렌기, 부틸렌기, 펜틸렌기 등의 탄화수소기를 들 수 있다. 분지상 알킬렌기로서는, 이소프로필렌기, 이소부틸렌기 등을 들 수 있다. As a specific example of said A, hydrocarbon group, such as a methylene group, an ethylene group, a propylene group, butylene group, and a pentylene group, is mentioned as a C1-C12 linear alkylene group. As a branched alkylene group, an isopropylene group, an isobutylene group, etc. are mentioned.
X는 가수분해성기이며, 탄소수 1 내지 7의 알콕시기, 할로겐, 이소시아네이트기 또는 하이드록실기일 수 있고, 바람직하게는 알콕시기일 수 있다. 분자 내 복 수의 X는 서로 동일하거나 다를 수 있다.X is a hydrolyzable group, and may be an alkoxy group having 1 to 7 carbon atoms, a halogen, an isocyanate group or a hydroxyl group, preferably an alkoxy group. The plural X's in the molecule may be the same or different from each other.
본 발명에 있어서, 실록산 수지는 상기 제1 단량체 외에 하기 화학식 2로 표시되는 제2 단량체를 조합하여 형성됨으로써 내열성을 향상시킬 수 있다.In the present invention, the siloxane resin may be formed by combining a second monomer represented by the following Formula 2 in addition to the first monomer, thereby improving heat resistance.
[화학식 2][Formula 2]
상기 화학식 2에서,In Chemical Formula 2,
X는 탄소수 1 내지 7의 알콕시기, 할로겐 원자, 이소시아네이트 또는 하이드록실기로서, 분자 내 복수의 X는 서로 동일하거나 다르고,X is an alkoxy group, a halogen atom, an isocyanate or a hydroxyl group having 1 to 7 carbon atoms, and a plurality of X in the molecule are the same or different from each other,
R2는 수소, 탄소수 1 내지 20의 직쇄상, 분지상 또는 환상의 지방족 알킬기, 또는 탄소수 6 내지 20의 아릴기이고,R 2 is hydrogen, a linear, branched or cyclic aliphatic alkyl group having 1 to 20 carbon atoms, or an aryl group having 6 to 20 carbon atoms,
n은 0 내지 3인 정수이며, n=3인 경우는 n이 3이 아닌 단량체와 병용된다.n is an integer of 0-3, and when n = 3, it is used together with the monomer whose n is not 3.
X는 가수분해성기이며, 탄소수 1 내지 7의 알콕시기, 할로겐 원자, 이소시아네이트 또는 하이드록실기일 수 있고, 바람직하게는 알콕시기일 수 있다. 분자 내 복수의 X는 서로 동일하거나 다를 수 있다.X is a hydrolyzable group, may be an alkoxy group having 1 to 7 carbon atoms, a halogen atom, an isocyanate or a hydroxyl group, preferably an alkoxy group. The plurality of Xs in a molecule may be the same or different from each other.
R2의 구체적인 예로서는, 탄소수 1 내지 20의 지방족 알킬기로 메틸기, 에틸기, n-프로필기, 이소프로필기, n-부틸기, 이소부틸기, n-펜틸기 등을 들 수 있으며, 환상의 지방족 알킬기의 구체적인 예로서는, 시클로펜틸기, 시클로헥실기, 노르보닐기, 아다만틸기 등을 들 수 있다. 탄소수 6 내지 20인 아릴기의 구체적인 예로서는 페닐기, 페놀기, 나프틸기, 안트라세닐기, 페난트레닐기, 피레닐기 등을 들 수가 있다. As a specific example of R <2> , a methyl group, an ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, n-pentyl group, etc. are mentioned, and a cyclic aliphatic alkyl group is mentioned. Specific examples of the cyclopentyl group, cyclohexyl group, norbornyl group, adamantyl group and the like can be given. Specific examples of the aryl group having 6 to 20 carbon atoms include phenyl group, phenol group, naphthyl group, anthracenyl group, phenanthrenyl group, pyrenyl group and the like.
상기 제2 단량체의 예를 들면, 테트라알콕시 실란, 트리알콕시 실란, 플루오르 트리알콕시 실란, 메틸 트리알콕시 실란, 에틸 트리알콕시 실란, n-프로필 트리알콕시 실란, 이소프로필 트리알콕시 실란, n-부틸 트리알콕시 실란, tert-부틸 트리알콕시 실란, 페닐 트리알콕시 실란, 비닐 트리알콕시 실란, 메타아크릴옥시 메틸 트리알콕시 실란, 2-메타아크릴옥시에틸 트리알콕시 실란, 3-메타아크릴옥시프로필 트리알콕시 실란, 2-아미노에틸 트리알콕시 실란, 3-아미노프로필 트리알콕시 실란, 3-글리시딜옥시프로필 트리알콕시 실란, 3-머켑토프로필 트리알콕시 실란, 3-이소시아네이토프로필 트리알콕시 실란, 3-시아노프로필 트리알콕시 실란, 2-에폭시시클로헥실 에틸 트리알콕시 실란 등이 사용될 수 있으나, 이에 한정되는 것은 아니다. 여기서 알콕시는 탄소수 1 ~ 7 사이의 직쇄상, 분지상 또는 환상의 지방족, 또는 방향족 알콕시이다.Examples of the second monomer include tetraalkoxy silane, trialkoxy silane, fluoro trialkoxy silane, methyl trialkoxy silane, ethyl trialkoxy silane, n-propyl trialkoxy silane, isopropyl trialkoxy silane, n-butyl trialkoxy Silane, tert-butyl trialkoxy silane, phenyl trialkoxy silane, vinyl trialkoxy silane, methacryloxy methyl trialkoxy silane, 2-methacryloxyethyl trialkoxy silane, 3-methacryloxypropyl trialkoxy silane, 2-amino Ethyl trialkoxy silane, 3-aminopropyl trialkoxy silane, 3-glycidyloxypropyl trialkoxy silane, 3-mercetopropyl trialkoxy silane, 3-isocyanatopropyl trialkoxy silane, 3-cyanopropyl tri Alkoxy silane, 2-epoxycyclohexyl ethyl trialkoxy silane, and the like may be used, but is not limited thereto. Alkoxy is linear, branched or cyclic aliphatic or aromatic alkoxy having 1 to 7 carbon atoms.
본 발명에 따른 실록산 수지 내에서 상기 제1 단량체로부터 형성되는 반복단위의 함량은 실록산 수지 전체 100 중량%에 대하여 10 내지 90 중량%인 것이 바람직하다. 함량이 범위에서 벗어날 경우, 현상성이 저하될 수 있다.The content of the repeating unit formed from the first monomer in the siloxane resin according to the present invention is preferably 10 to 90 wt% based on 100 wt% of the total siloxane resin. If the content is out of range, developability may be reduced.
선택적으로, 제2 단량체는 서로 다른 2종이 함께 사용될 수 있다. Optionally, the second monomer may be used in combination with two different species.
본 발명에 따른 실록산 수지는 제1 단량체와 제2 단량체의 가수분해-축합반응을 거쳐 얻어진다. 하기 반응식 1에 나타난 실록한 수지의 반응식의 일 예는 다음과 같다:The siloxane resin according to the present invention is obtained through a hydrolysis-condensation reaction of a first monomer and a second monomer. An example of the reaction scheme of the siloxane resin shown in Scheme 1 is as follows:
상기 반응식 1에서, 촉매는 산촉매 또는 염기촉매를 사용할 수 있다.In Scheme 1, the catalyst may be an acid catalyst or a base catalyst.
산촉매로는 예를 들면, 염산, 황산, 질산, 붕산, 포름산, 말레인산, 푸마르산, 프탈산, 말론산, 호박산, 주석산, 사과산, 유산, 구연산, 초산, 프로피온산, 부탄산, 펜탄산, 헥산산, 헵탄산, 옥탄산, 노난산, 올레인산, 스테아린산, 살리실산, 벤젠술폰산, p-톨루엔술폰산, 메탄 술폰산, 플루오로메탄 술폰산, 트리플루오로 에탄 술폰산, 산성 이온교환수지 등을 각각 단독으로 또는 2종 이상 혼합하여 사용할 수 있다. As the acid catalyst, for example, hydrochloric acid, sulfuric acid, nitric acid, boric acid, formic acid, maleic acid, fumaric acid, phthalic acid, malonic acid, succinic acid, tartaric acid, malic acid, lactic acid, citric acid, acetic acid, propionic acid, butanoic acid, pentanoic acid, hexanoic acid, heptane Acid, octanoic acid, nonanoic acid, oleic acid, stearic acid, salicylic acid, benzenesulfonic acid, p-toluenesulfonic acid, methane sulfonic acid, fluoromethane sulfonic acid, trifluoroethane sulfonic acid, acidic ion exchange resin, etc., alone or in combination of two or more Can be used.
염기촉매로는 예를 들면, 암모니아, 1급 아민류, 2급 아민류, 3급 아민류, 피리딘 등의 질소함유 화합물, 알칼리성 이온교환수지, 수산화물, 탄산염 등을 각각 단독으로 또는 2종 이상 혼합하여 사용할 수 있다.As the base catalyst, for example, nitrogen-containing compounds such as ammonia, primary amines, secondary amines, tertiary amines, pyridine, alkaline ion exchange resins, hydroxides, carbonates and the like can be used alone or in combination of two or more thereof. have.
촉매의 사용량은 전체 실란 단량체 1몰(mole)에 대해 0.001 내지 3몰일 수 있고, 바람직하게는 0.005 내지 0.5몰일 수 있다.The amount of the catalyst to be used may be 0.001 to 3 moles, preferably 0.005 to 0.5 moles, based on 1 mole of the total silane monomers.
가수분해-축합에 사용되는 물의 양은 전체 실란 단량체 1몰에 대해 0.1 내지 100 몰일 수 있고, 바람직하게는 2 내지 10 몰일 수 있다. The amount of water used for the hydrolysis-condensation may be 0.1 to 100 moles, preferably 2 to 10 moles, relative to 1 mole of the total silane monomers.
가수분해-축합반응의 반응온도는 40 내지 120℃일 수 있으며, 바람직하게는 60 내지 80℃일 수 있다. 반응시간은 2 내지 20시간 일 수 있으며, 바람직하게는 4 내지 16시간일 수 있다. The reaction temperature of the hydrolysis-condensation reaction may be 40 to 120 ° C, preferably 60 to 80 ° C. The reaction time may be 2 to 20 hours, preferably 4 to 16 hours.
가수분해-축합반응 후에는 부반응물로 생성된 알코올류를 증발 제거 하여야 하고, 안정성을 위해 탄소수 3 ~ 7 사이의 하이드록시 함유 화합물 내지 알코올류를 첨가할 수 있다. 생성된 실록산 수지는 상분리를 통하여 산촉매 또는 염기촉매를 제거하고, MgSO4 등으로 건조하여 수분을 제거한다. After the hydrolysis-condensation reaction, alcohols produced as side reactants should be evaporated off, and hydroxy containing compounds or alcohols having 3 to 7 carbon atoms may be added for stability. The produced siloxane resin is removed an acid catalyst or a base catalyst through phase separation and dried with MgSO 4 to remove moisture.
얻어진 실록산 수지의 중량평균분자량은 4,000 내지 20,000인 것이 바람직하다.It is preferable that the weight average molecular weights of the obtained siloxane resin are 4,000-20,000.
상기 반응식 1에 나타난 바와 같이, 가수분해-축합반응 후 X의 일부는 미반응한 채로 남아 있을 수 있다. 미반응한 X는 클로로트리메틸실란, 클로로트리에틸실란, 클로로트리프로필실란, 클로로트리이소프로필실란 등으로 가수분해-축합반응을 통해 일부 제거될 수 있다.As shown in Scheme 1, part of X may remain unreacted after the hydrolysis-condensation reaction. Unreacted X may be partially removed through hydrolysis-condensation with chlorotrimethylsilane, chlorotriethylsilane, chlorotripropylsilane, chlorotriisopropylsilane, and the like.
본 발명의 양성 감광성 수지 조성물에 있어서, 감광제는 광 조사에 의해 카르복실산을 발생하는 1,2-나프토퀴논 디아지드 술폰산 에스테르 화합물을 포함한다. 1,2-나프토퀴논 디아지드 술폰산 에스테르는 페놀계 화합물, 알코올계 화합물 또는 아미노기를 가지는 화합물과 1,2-나프토퀴논 디아지드 술폰산 할라이드와의 축합반응으로 제조될 수 있다. In the positive photosensitive resin composition of the present invention, the photosensitive agent contains a 1,2-naphthoquinone diazide sulfonic acid ester compound which generates carboxylic acid by light irradiation. The 1,2-naphthoquinone diazide sulfonic acid ester may be prepared by the condensation reaction of a phenolic compound, an alcoholic compound or a compound having an amino group with 1,2-naphthoquinone diazide sulfonic acid halide.
본 발명에 따른 1,2-나프토퀴논 디아지드 술폰산 에스테르 감광제는 1종 단독으로 또는 2종 이상 혼합하여 이용할 수 있다. The 1,2-naphthoquinone diazide sulfonic acid ester photosensitizer which concerns on this invention can be used individually by 1 type or in mixture of 2 or more types.
감광제의 함량은 실록산 수지 전체 중량 100 중량부에 대하여 1 내지 25 중량부인 것이 바람직하며, 보다 바람직하게는 5 내지 25 중량부이다. The content of the photosensitizer is preferably 1 to 25 parts by weight, more preferably 5 to 25 parts by weight based on 100 parts by weight of the total weight of the siloxane resin.
본 발명의 양성 감광성 수지 조성물에 있어서, 유기용매는 상기 실록산 수지 및 감광제를 모두 용해 할 수 있는 용매라면 제한없이 사용할 수 있다. 구체적인 예를 들면, 메틸 에틸 케톤, 메틸-n-프로필 케톤, 메틸 이소프로필 케톤, 메틸-n-부틸 케톤, 메틸 이소부틸 케톤, 메틸-n-펜틸 케톤, 디에틸 케톤, 디프로필케톤, 디이소부틸 케톤, 사이클로헥사논, 사이클로펜타논, 메틸 사이클로헥사논, 2,4-펜탄디온, 아세토닐아세톤, 감마-부티로락톤, 감마-발레로락톤 등의 케톤(ketone)계 용매; 메틸 에틸 에테르, 메틸 디-n-프로필 에테르, 디이소 프로필 에테르, 테트라하이드로퓨란, 메틸 테트라하이드로퓨란, 에틸렌 글리콜 디메틸에테르, 에틸렌 글리콜 에테르, 에틸렌 글리콜 디부틸 에테르, 디에틸렌 글리콜 메틸 에틸 에테르, 트리에틸렌 글리콜 디메틸 에테르, 트리에틸렌 글리콜 에테르, 트리에틸렌 글리콜 메틸 에틸 에테르, 프로필렌 글리콜 디메틸 에테르, 프로필렌 글리콜 에테르, 프로필렌 글리콜-n-프로필 에테르, 프로필렌 글리콜 디부틸 에테르, 에틸렌 글리콜 메틸 에테르, 에틸렌 글리콜 에틸 에테르, 디에틸렌 글리콜 모노메틸 에테르, 디에틸렌 글리콜 에틸 에테르, 프로필렌 글리콜 모노메틸 에테르 등의 에테르(ether)계 용매; 에틸렌 글리콜 메틸 에테르 프로피오네이트, 에틸렌 글리콜 에틸 에테르 프 로피오네이트, 에틸렌 글리콜 메틸 에테르 아세테이트, 에틸렌 글리콜 에틸 에테르 아세테이트, 프로필렌 글리콜 메틸 에테르 아세테이트 프로필렌 글리콜 에틸 에테르 아세테이트, 프로필렌 글리콜 프로필 에테르 아세테이트 등의 에테르 아세테이트(ether acetate)계 용매, 아세토니트릴, N-메틸 피롤리디논, N-에틸 피롤리디논, N-프로필 피롤리디논, N,N-디메틸 포름아미드, N,N-디메틸 아세트아미드, N,N-디메틸 설폭시드, 톨루엔, 크실렌 등이 있고, 메탄올, 에탄올, n-프로판올, 이소프로판올, n-부탄올, 이소부탄올, 시클로 헥사놀, 메틸 시클로 헥사놀, 벤질알콜, 에틸렌 글리콜, 1,2-프로필렌 글리콜, 디에틸렌 글리콜 등의 알코올계 용매 등이 각각 단독으로 또는 2종 이상 혼합되어 이용될 수 있지만, 여기에 한정되는 것은 아니다. In the positive photosensitive resin composition of the present invention, The organic solvent can be used without limitation so long as it is a solvent capable of dissolving both the siloxane resin and the photosensitive agent. Specific examples include methyl ethyl ketone, methyl-n-propyl ketone, methyl isopropyl ketone, methyl-n-butyl ketone, methyl isobutyl ketone, methyl-n-pentyl ketone, diethyl ketone, dipropyl ketone, diiso Ketone solvents such as butyl ketone, cyclohexanone, cyclopentanone, methyl cyclohexanone, 2,4-pentanedione, acetonyl acetone, gamma-butyrolactone, and gamma-valerolactone; Methyl ethyl ether, methyl di-n-propyl ether, diisopropyl ether, tetrahydrofuran, methyl tetrahydrofuran, ethylene glycol dimethyl ether, ethylene glycol ether, ethylene glycol dibutyl ether, diethylene glycol methyl ethyl ether, triethylene Glycol dimethyl ether, triethylene glycol ether, triethylene glycol methyl ethyl ether, propylene glycol dimethyl ether, propylene glycol ether, propylene glycol-n-propyl ether, propylene glycol dibutyl ether, ethylene glycol methyl ether, ethylene glycol ethyl ether, di Ether solvents such as ethylene glycol monomethyl ether, diethylene glycol ethyl ether, and propylene glycol monomethyl ether; Ether acetates such as ethylene glycol methyl ether propionate, ethylene glycol ethyl ether propionate, ethylene glycol methyl ether acetate, ethylene glycol ethyl ether acetate, propylene glycol methyl ether acetate propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate ( ether acetate) solvent, acetonitrile, N-methyl pyrrolidinone, N-ethyl pyrrolidinone, N-propyl pyrrolidinone, N, N-dimethyl formamide, N, N-dimethyl acetamide, N, N- Dimethyl sulfoxide, toluene, xylene and the like, methanol, ethanol, n-propanol, isopropanol, n-butanol, isobutanol, cyclo hexanol, methyl cyclohexanol, benzyl alcohol, ethylene glycol, 1,2-propylene glycol, Alcohol solvents such as diethylene glycol, etc. may be used alone or in combination of two or more thereof. But it can be used, but is not limited to it.
유기용매의 함량은 실록산 수지 및 감광제 함량에 따라 적절히 조절할 수 있으며, 예를 들면 감광성 수지 조성물의 고형분 전체 100 중량부에 대하여, 10 내지 80 중량부일 수 있으나, 이에 한정되는 것은 아니다.The content of the organic solvent may be appropriately adjusted according to the content of the siloxane resin and the photosensitizer, and may be, for example, 10 to 80 parts by weight based on 100 parts by weight of the total solids of the photosensitive resin composition, but is not limited thereto.
상기 실록산 수지 및 감광제와 유기용매의 혼합은 당분야에서 통상적인 방법을 이용할 수 있다. 예를 들면, 실록산 수지의 제조 시에 용매로 사용하는 방법 또는, 실록산 수지의 제조 후, 첨가 또는 교환하는 방법 등이 있다.Mixing of the siloxane resin, the photosensitizer and the organic solvent may use a conventional method in the art. For example, the method of using as a solvent at the time of manufacture of a siloxane resin, the method of adding or exchanging after manufacture of a siloxane resin, etc. are mentioned.
Claims (7)
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