KR20110062192A - A method for fabricating probe structure of probe card - Google Patents

Abstract

PURPOSE: A method for manufacturing the probe of a probe card is provided to etch a semiconductor substrate to perform a probe tip plating process in a process in which a probe structure is formed, thereby saving production costs. CONSTITUTION: A semiconductor substrate(100) is etched to form a probe tip and a probe beam in a probe tip area and a probe beam area. A third mask pattern defines a hole area for plating a tip. The third mask pattern is formed on the lower part of the semiconductor substrate. A hole for plating a tip is formed by etching the semiconductor substrate by the third mask pattern. A metal solution with stronger abrasion resistance is injected into the hole for plating a tip to plate a probe tip.

Description

A method for fabricating probe structure of probe card

The present invention relates to a method for manufacturing a probe structure of a probe card, and more particularly, in forming a probe structure of a probe card having a fine pitch by etching a sacrificial substrate, and forming a hole for tip plating in the lower part of the sacrificial substrate, The present invention relates to a technique for plating a probe tip by injecting a metal solution having a higher wear resistance than a probe tip material into a tip plating hole to solve a wear problem and to extend a cleaning cycle.

In general, the probe card electrically connects the wafer and the semiconductor device inspection equipment to test whether there is a defect during or after fabrication of a semiconductor device such as a semiconductor memory, a flat panel display (FPD), and transmits an electrical signal of the inspection equipment to the wafer. It is a device for transmitting to the formed semiconductor die (die), and the signal returned from the semiconductor die to the inspection equipment of the semiconductor element.

On the other hand, as semiconductor devices are gradually reduced to finer sizes, the degree of integration of circuits is getting higher. Therefore, electrode pads of semiconductor devices in which needles of probe cards are in contact with each other are becoming even finer. MEMS type (Micro Electro Mechanical Systems type) in which the probe is formed integrally is used.

The MEMS type probe card forms a tip region by etching a semiconductor substrate and forms a probe structure by using a photoresist pattern defining a beam region.

The material of the probe card is mainly used for plating by adding cobalt to nickel. However, Ni-Co has a high elasticity. However, a problem arises that wear occurs when scrubs on an aluminum pad. There is a problem that the scrubbing residue is fixed to the tip end and the cleaning cycle is short.

The present invention has been made to solve the above problems, an object of the present invention is to plate the probe tip only with a metal with excellent wear resistance to solve the problem of wear and to extend the cleaning cycle while maintaining the overall elastic force It is.

Another object of the present invention is to provide a method in which a probe tip plating process is performed in a process of etching a semiconductor substrate to form a probe structure, thereby ensuring continuity of the process and making probe tip plating very easy.

According to an aspect of the present invention for achieving the above object, the step of forming a first mask pattern defining a probe beam region on the semiconductor substrate, defining a probe tip region on the semiconductor substrate and the first mask pattern Forming a probe tip region by etching the semiconductor substrate using the second mask pattern as an etch mask, removing the second mask pattern, and removing the first mask pattern Etching the semiconductor substrate with an etch mask to form the probe beam region, etching an exposed portion of the semiconductor substrate to a predetermined depth, and forming a probe tip and a probe beam in the probe tip region and the probe beam region. And forming a third mask pattern defining a hole region for tip plating below the semiconductor substrate. Forming a tip plating hole having a predetermined depth by etching the semiconductor substrate using the third mask pattern as an etch mask; and injecting a metal solution having a higher wear resistance than the probe tip material into the tip plating hole. Provided is a method of manufacturing a probe structure of a probe card, comprising the step of plating a tip.

Here, the method may further include etching the tip plating hole to the lower portion of the probe beam and removing the semiconductor substrate.

The probe structure is made of Ni-Co alloy material, and the plating metal is more preferably Rh.

According to the present invention as described above, it is possible to solve the problem of wear while maintaining the overall elastic force of the probe structure, there is an effect that can extend the cleaning cycle by suppressing the occurrence of debris as much as possible.

In addition, since the probe tip plating process is performed in the process of etching the semiconductor substrate to form the probe structure, the continuity of the process is secured, thereby reducing the production cost.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

1A to 1N are cross-sectional views illustrating a method for manufacturing a probe structure according to the applicant's registered patent, and show a process before the probe tip plating process according to the present invention is applied.

Referring to FIG. 1A, a first mask pattern 110 defining a probe beam region 140 is formed on the semiconductor substrate 100. The first mask pattern 110 may be formed by selectively etching an oxide film or a photoresist on the semiconductor substrate 100.

Referring to FIG. 1B, a second mask pattern 120 defining a probe tip region 130 is formed on the semiconductor substrate 100 and the first mask pattern 110. The second mask pattern 120, like the first mask pattern 110 is preferably formed by selectively etching after forming an oxide film or a photoresist on a semiconductor substrate (100).

Referring to FIG. 1C, the probe tip region 130 is formed by etching the semiconductor substrate 100 using the second mask pattern 120 as an etching mask.

Referring to FIG. 1D, the second mask pattern 120 is removed to expose a predetermined portion of the probe beam region 140.

Referring to FIG. 1E, the semiconductor substrate 100 is etched using the first mask pattern 110 as an etch mask to form the probe beam region 140.

Referring to FIG. 1F, an insulating layer 150 is formed on the surface of the semiconductor substrate 100 exposed by the first mask pattern 110.

Referring to FIG. 1G, an insulating layer is anisotropically etched until the surface of the semiconductor substrate 100 is exposed to form sidewall insulating layer patterns 150a on sidewalls of the probe tip region 130 and the probe beam region 140.

Referring to FIG. 1H, an exposed portion of the semiconductor substrate 100 is etched to a predetermined depth using the sidewall insulating layer pattern 150a and the first mask pattern 110 as a mask.

Referring to FIG. 1I, the sidewall insulating layer pattern 150a and the first mask pattern 110 are etched and removed. The etching process is preferably performed using a KOH and TMAH solution.

Referring to FIG. 1J, the seed layer 160 is formed on the semiconductor substrate 100. The seed layer 160 is preferably formed of a Ti / Cu layer.

Referring to FIG. 1K, a dummy mask layer pattern 170 exposing the probe tip region 130 and the probe beam region 140 is formed.

Referring to FIG. 1L, a probe tip and a probe beam 180 are formed in the probe tip region 130 and the probe beam region 140, respectively. The probe tip and probe beam are preferably formed of a Ni—Co layer using a plating process.

Referring to FIG. 1M, a photoresist pattern 190 is formed to expose a region predetermined as a conductive bump, that is, an end portion of a probe beam. Next, the conductive bumps 200 are formed of metal or the like.

Referring to FIG. 1N, the photosensitive film pattern 190 is removed to primarily complete the probe structure.

In the above, the probe tip and the probe beam are preferably made of Ni - Co alloy to provide elastic force so that the probe tip can be sufficiently bent when contacting the test surface.

FIG. 2 is a cross-sectional view illustrating a process of plating a probe tip after manufacturing the probe structure of FIG. 1.

Referring to FIG. 2A, a third mask pattern 205 defining a hole region for tip plating is formed under the semiconductor substrate 100. Similar to the first and second mask patterns 110 and 120, the third mask pattern 205 may be formed by selectively etching an oxide film or a photoresist under the semiconductor substrate 100.

Referring to FIG. 2B, the lower portion of the semiconductor substrate 100 is etched using the third mask pattern 205 as an etch mask to form a tip plating hole 210 having a predetermined depth.

Referring to FIG. 2C, a plating solution 220 plated with a probe tip is formed by injecting a metal solution having a higher wear resistance than a Ni—Co alloy into the tip plating hole 210. It is preferable to use hard metals, such as rhodium (Rh), which are inferior in elasticity to Ni-Co alloy but are excellent in wear resistance.

2D and 2E, after the tip plating hole 210 is additionally etched to the bottom of the probe beam, the third mask pattern 205 is removed to complete the probe structure. In FIG. 2D, the tip plating hole 210 is additionally added to the lower part of the probe beam. Etching is to prevent the semiconductor substrate 100 from expanding due to heat to apply pressure to the connection portion between the probe beam and the probe tip when the manufactured probe structure is bonded to the substrate, thereby preventing damage or cracking of the corresponding portion . .

That is, the tip plating hole 210 as shown in Figure 2d Probe  To the bottom of the beam Additionally expression Each side Probe  Beam and Probe  Since the semiconductor substrate 100 is spaced at a considerable distance around the connecting portion of the tip, the pressure due to thermal expansion is not applied.

Although not shown, the probe card may be completed by attaching the structure of FIG. 1N to the substrate on which the cantilever pedestal is formed via the conductive bump 200 and removing the semiconductor substrate 100.

example In the embodiment  1 and 2 are exemplarily described as being processed in a continuous process, which is representative Example  The semiconductor substrate is formed by various methods in addition to the method shown in FIG. By etching  Manufactured Probe Road to constructions  2 of Probe  The process of plating the tip can be applied, which is also naturally included in the technical spirit of the present invention.

Although the present invention has been described in connection with the above-mentioned preferred embodiments, it is possible to make various modifications or variations without departing from the spirit and scope of the invention. Accordingly, the appended claims are intended to cover such modifications or changes as fall within the scope of the invention.

1A to 1N are cross-sectional views illustrating a method for manufacturing a probe structure of a probe card up to the pre-probe tip plating step,

1A is a step of forming a first mask pattern,

1B is a step of forming a second mask pattern,

1C is a process for forming a probe tip region,

1D is a process of removing the second mask pattern,

1E illustrates a process of forming a probe beam region;

1F is a step of forming an insulating film in the exposed portion of the semiconductor substrate,

1G is a step of forming a side insulating film pattern,

1H illustrates a process of etching an exposed portion of a semiconductor substrate to a predetermined depth;

1I illustrates a process of removing a first mask pattern;

1J is a step of forming a seed layer,

1K is a step of forming a dummy mask layer,

1L illustrates a process of forming a probe in a probe tip region and a probe beam region;

1m is a step of forming a photosensitive film pattern and a conductive bump,

1N is a step of forming a probe structure by removing the photoresist pattern.

FIG. 2 is a cross-sectional view illustrating a process of plating a probe tip after manufacturing the probe structure of FIG. 1.

2A is a step of forming a third mask pattern defining a hole region for tip plating;

Figure 2b is a step of forming a hole for tip plating of a predetermined depth,

2c is a process for plating a probe tip,

2d is a process of additionally etching the tip plating hole to the lower portion of the probe beam,

2E illustrates a process of completing the probe structure by removing the third mask pattern.

<Description of the major reference numerals>

100 semiconductor substrate 110 first mask pattern

120: second mask pattern 130: probe tip region

140: probe beam region 150: insulating film

150a: sidewall insulating film pattern 160: seed layer

170: dummy mask layer pattern 180: probe tip and probe beam

190: photosensitive film pattern 200: conductive bump

205: third mask pattern 210: hole for tip plating

220: plating layer

Claims (3)

Forming a first mask pattern defining a probe beam region over the semiconductor substrate; Forming a second mask pattern defining a probe tip region on the semiconductor substrate and the first mask pattern; Etching the semiconductor substrate using the second mask pattern as an etch mask to form the probe tip region; Removing the second mask pattern; Etching the semiconductor substrate using the first mask pattern as an etch mask to form the probe beam region; Etching the exposed portion of the semiconductor substrate to a predetermined depth; Forming a probe tip and a probe beam in the probe tip region and the probe beam region; Forming a third mask pattern defining a hole region for tip plating below the semiconductor substrate; Etching the semiconductor substrate using the third mask pattern as an etch mask to form a tip plating hole having a predetermined depth; And And plating the probe tip by injecting a metal solution having a higher wear resistance than the probe tip material into the tip plating hole. The method of claim 1, Additionally etching the tip plating hole down to the bottom of the probe beam; And Removing the semiconductor substrate further comprises a probe structure manufacturing method of the probe card, characterized in that it further comprises. The method of claim 1, The probe structure is a Ni-Co alloy material, the plating metal is a probe structure manufacturing method of the probe card, characterized in that the Rh.

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