KR20110060681A - Planar hall resistance sensor and multi axis sensor using a planar hall resistance sensor - Google Patents

Abstract

PURPOSE: A plane hall resistance sensor and a multi-axial sensor using the same are provided to improve the output characteristic of the sensor by reducing the bonding force of an anti-ferromagnetic substance layer and a ferromagnetic substance layer. CONSTITUTION: A seed layer(11) is composed of Ta or Ti, and the thickness of the seed layer is between 3 and 10nm. The seed layer induces the self-alignment of a ferromagnetic substance. Fixed layers(12, 13, 14, 15) include a ferromagnetic substance layer, an anti-magnetic substance layer, and an anti-ferromagnetic substance layer. The ferromagnetic substance layer is stacked on the seed layer. The anti-magnetic substance layer is stacked on the ferromagnetic substance layer. A cap layer(16) is composed of Ta or Ti.

Description

Planar hall resistance sensor and multi axis sensor using a planar hall resistance sensor}

The present invention relates to a flat Hall resistance sensor and a multi-axis sensor using the same, and more particularly, to a flat Hall resistance sensor capable of detecting a micro magnetic field and a magnetic sensor (or a geomagnetic sensor) such as two or three axes using the same. It relates to a multi-axis sensor.

In general planar Hall resistance sensors, the direction of the voltage measurement and the direction of the current flowing are perpendicular to each other. The conventional planar Hall resistance sensor measures the magnetoresistance using the voltage generated by the Hall effect in which the flowing measurement current is affected by an external magnetic field.

The conventional planar Hall resistance sensor has a film formation pattern as shown in FIG. 1 and is configured in a cross shape as shown in FIG. Reference numeral 1 denotes a current direction pattern, and reference numerals 2 and 3 denote voltage measurement patterns.

The conventional planar Hall resistance sensor of FIG. 1 configured as described above is manufactured in a single thin film or a two-layer thin film structure such as ferromagnetic NiFe or CoFe. The conventional planar Hall resistance sensor of FIG. 1 exhibits linear output characteristics starting from zero magnetic field when the output voltage is measured in a vertical direction shifted by 90 degrees with respect to the applied current direction.

1 and 2, the cross-shaped flat Hall resistance sensor of the related art has a relatively large size and a driving current of about 5 mA, which is disadvantageous in terms of power consumption. In addition, the output characteristics of the minimum value and the maximum value show a low output characteristic of about ± 150 ~ ± 200㎶. In addition, the linear section region from the zero magnetic field is also very narrow locally within the gauss.

The present invention has been proposed in order to solve the above-mentioned problems, and the planar Hall resistance sensor which significantly reduces the size compared to the existing planar Hall resistance sensor and reduces the driving current, reduces the consumption strategy of the sensor and improves the output characteristics. The purpose is to provide a multi-axis sensor.

In order to achieve the above object, in the planar Hall resistance sensor according to the preferred embodiment of the present invention, a nonmagnetic layer is stacked inside a fixed layer of a sensor thin film having a bi-layer structure.

The nonmagnetic layer is laminated between the antiferromagnetic layer and the ferromagnetic layer inside the pinned layer.

The nonmagnetic layer is composed of any one of Cu, Ta, Ru, and Pd.

The nonmagnetic layer has a thickness of 0.1-0.8 nm.

In the planar Hall resistance sensor according to another embodiment of the present invention, a plurality of planar Hall resistance sensors in which a nonmagnetic layer is stacked inside a fixed layer of a sensor thin film having a bi-layer structure are arranged.

Here, the nonmagnetic layer is laminated between the antiferromagnetic layer and the ferromagnetic layer inside the pinned layer. The nonmagnetic layer is composed of any one of Cu, Ta, Ru, and Pd. The nonmagnetic layer has a thickness of 0.1-0.8 nm.

On the other hand, the multi-axis sensor according to a preferred embodiment of the present invention, the non-magnetic layer is laminated in the fixed layer of the sensor thin film of the bi-layer structure and the first to perform the geomagnetic sensing in any of the axial direction of the X, Y axis 1 flat hall resistance sensor; And a nonmagnetic layer formed inside a fixed layer of the sensor thin film having a bi-layer structure, and performing geomagnetic sensing in the remaining axial direction of the X and Y axes. 2 plane Hall resistance sensor.

The nonmagnetic layer is laminated between the antiferromagnetic layer and the ferromagnetic layer inside the pinned layer.

The nonmagnetic layer is composed of any one of Cu, Ta, Ru, and Pd.

The nonmagnetic layer has a thickness of 0.1-0.8 nm.

Preferably, the Hall sensor may be further provided for the geomagnetic detection in the Z-axis direction.

According to the present invention having such a configuration, by stacking a nonmagnetic layer between fixed layers in a bi-layer structure, the coupling force between the antiferromagnetic layer and the ferromagnetic layer is reduced to improve the output characteristics of the sensor.

Since the array type planar Hall resistance sensor is easy to implement, implementing the array type planar Hall resistance sensor further improves the output characteristics of the sensor.

In bi-layer structure, it can be applied to X-Y biaxial flat Hall resistance sensor and Z-axis Hall sensor with sensor thin film in which nonmagnetic layer is laminated between fixed layers.

According to the present invention, a sensor having a length of about 250 μm and a width of about 50 μm can be manufactured, thereby significantly reducing the size of the conventional flat hall resistance sensor.

In addition, it is possible to operate sufficiently even if the driving current is reduced to about 1 mA, thereby reducing the power consumption of the sensor.

Hereinafter, a planar Hall resistance sensor and a multi-axis sensor using the same according to an exemplary embodiment of the present invention will be described with reference to the accompanying drawings. Prior to the detailed description of the present invention, the terms or words used in the specification and claims described below should not be construed as being limited to the ordinary or dictionary meanings. Therefore, the embodiments described in the specification and the drawings shown in the drawings are only one of the most preferred embodiments of the present invention and do not represent all of the technical idea of the present invention, various modifications that can be replaced at the time of the present application It should be understood that there may be equivalents and variations.

3 is a diagram illustrating a sensor thin film structure of a planar Hall resistance sensor according to an exemplary embodiment of the present invention.

The sensor thin film 30 of the planar Hall resistance sensor according to the exemplary embodiment of the present invention has a bi-layer structure. The sensor thin film 30 includes a seed layer 11 stacked on the substrate 10, a pinned layer 12, 13, 14, 15 stacked on the seed layer 11, and a fixed layer 12, 13, And a cap layer 16 stacked on 14, 15.

The seed layer 11 is made of Ta or Ti, for example, and is formed to a thickness of about 3 to 10 nm. The seed layer 11 serves to induce the magnetic arrangement of the ferromagnetic material, to prevent oxidation of the material, and to improve adhesion between the substrate and the magnetic thin film.

The pinned layers 12, 13, 14, and 15 include ferromagnetic layers 12, 13, nonmagnetic layers 14, and antiferromagnetic layers 15. The ferromagnetic layer 12 is stacked on the seed layer 11 and formed of NiFe, for example, and formed to a thickness of about 3 to 50 nm. The ferromagnetic layer 13 is laminated on the ferromagnetic layer 12, for example made of CoFe, and formed to a thickness of about 3 to 50 nm. In the bi-layer structure, each of the ferromagnetic layers 12 and 13 is significantly inferior in PHR characteristics when the thickness exceeds 50 nm. The nonmagnetic layer 14 is laminated on the ferromagnetic layer 13 and is made of, for example, any one of Cu, Ta, Ru, and Pd, and is formed to a thickness of about 0.1 to 0.8 nm. Experimental results showed that the best output characteristics were shown when the thickness of the nonmagnetic layer 14 was 0.12 nm. When the thickness of the nonmagnetic layer 14 exceeds 0.8 nm, the exchange-bonded anisotropy with the antiferromagnetic layer 15 is lost. The nonmagnetic layer 14 may be referred to as a spacer layer. The antiferromagnetic layer 15 is stacked on the nonmagnetic layer 14 and is formed of any one of IrMn, NiO, FeMn, and PtMn, for example, and has a thickness of about 10 to 30 nm. The antiferromagnetic layer 15 is a ferromagnetic layer with respect to the direction of the external magnetic field due to an exchange coupling force with the ferromagnetic layer 13 when an external magnetic field is applied during deposition of a thin film by sputtering or when an annealing sensor is manufactured through an annealing device during magnetic field. It acts by fixing the magnetic domain of (13) in one direction.

Like the seed layer 11, the cap layer 16 is made of Ta, Ti, or the like, and is formed to a thickness of about 3 to 10 nm. Like the seed layer 11, the cap layer 16 induces the magnetic arrangement of the ferromagnetic material, prevents oxidation of the material, and improves adhesion of the magnetic thin film.

The sensor thin film 30 may adjust the exchange coupling anisotropy strength of the pinned layer according to the thickness of the nonmagnetic layer 15 by inserting a very thin nonmagnetic material between the ferromagnetic layer and the antiferromagnetic layer of the pinned layer. This improves the output characteristics of the sensor with respect to the external magnetic field. In other words, by inserting the nonmagnetic layer 14 between the ferromagnetic layers 12 and 13 and the antiferromagnetic layer 15, the exchange coupling anisotropy strength of the fixed layer is reduced, making the sensor more sensitive to external magnetic fields.

4A to 4C are graphs illustrating output characteristics of a conventional bi-layer type planar Hall resistance sensor and a planar Hall resistance sensor according to an exemplary embodiment of the present invention. 4A shows the output characteristics of a conventional Bi-layer planar Hall resistance sensor without the nonmagnetic layer 14. 4B shows the output characteristics of the planar Hall resistance sensor of the embodiment of the present invention fabricated with the nonmagnetic layer 14 having a thickness of 0.1 nm. 4C shows the output characteristics of the planar Hall resistance sensor of the embodiment of the present invention fabricated with the nonmagnetic layer 14 having a thickness of 0.2 nm.

In the absence of the nonmagnetic layer 14, the linear region is enlarged to about 50 gauss as shown in FIG. 4A. In FIGS. 4B and 4C having the nonmagnetic layer 14, the linear region section is ± 50 gauss. Will be reduced to). The maximum and minimum output characteristics of the sensor are slightly different, but the linear region section becomes narrower, so the output characteristic per gauss becomes larger than that of the sensor without the nonmagnetic layer 14. The linear region of the bi-layer planar Hall resistance sensor of the embodiment of the present invention can be adjusted from ± several hundred gauss to ± several gauss depending on the material and structure of the sensor.

In other words, the output characteristics vary slightly depending on the thickness and the material of the antiferromagnetic layer and the ferromagnetic layer in the fixed layer. However, as the thickness of the nonmagnetic layer 14 increases, the linear region section becomes narrower from the zero magnetic field. The output characteristic per gauss becomes large.

By controlling the thickness of the nonmagnetic layer 14 as described above, a sensor having a desired magnetic field region and output characteristics can be easily manufactured.

5 is a graph showing output characteristics of a conventional bi-layer type flat hall resistance sensor and a flat hall resistance sensor according to an exemplary embodiment of the present invention. In FIG. 5, curve p1 represents the output characteristic (PHE voltage profile) of the planar Hall resistance sensor according to the exemplary embodiment of the present invention, and curve p2 represents the output characteristic of the conventional bi-layer planar Hall resistance sensor. PHE voltage profile).

Except for the nonmagnetic layer 14, the conventional bi-layer type planar Hall resistance sensor having the same sensor thin film structure and the output characteristics of the planar Hall resistance sensor according to the embodiment of the present invention are compared. The output characteristic of the Bi-layer) planar Hall resistance sensor is about 1.6 mA / Oe, and the output characteristic of the flat Hall resistance sensor according to the embodiment of the present invention is about 12 mA / Oe. Accordingly, it can be seen that the sensor sensitivity to the external magnetic field of the planar Hall resistance sensor according to the embodiment of the present invention is superior to that of the conventional Bi-layer planar Hall resistance sensor.

Figure 6 is a graph showing the results of the experiment by adjusting the thickness of the nonmagnetic layer of the planar Hall resistance sensor according to an embodiment of the present invention. FIG. 6 shows that the thickness of each layer of the sensor thin film is Ta (3) / NiFe (10) / Cu (x) / IrMn (10) / Ta (3), with Cu thicknesses of 0.12, 0.18, 0.30, and 0.54. The experiment was made to vary. Here, the number in () means the thickness and the unit is nm.

As a result, the best properties were obtained when the thickness of the nonmagnetic layer, that is, the thickness of Cu was 0.12 nm. In Fig. 6, the curve g1 shows the output characteristics (PHE voltage profile) when the thickness of Cu is 0.12 nm, and the curve g2 shows the output characteristics (PHE voltage profile) when the thickness of Cu is 0.18 nm. Curve g3 shows the output characteristics (PHE voltage profile) when the thickness of Cu is 0.30 nm, and curve g4 shows the output characteristics (PHE voltage profile) when the thickness of Cu is 0.54 nm.

FIG. 7 is a structural diagram illustrating an array type planar Hall resistance sensor according to an exemplary embodiment of the present invention, and FIG. 8 is a graph illustrating output characteristics of the array type planar Hall resistance sensor of FIG. 7.

A plurality of planar Hall resistance sensors 100, 110, 120 are arrayed in series. Each planar hall resistance sensor 100, 110, 120 has a structure of the sensor thin film 30 described with reference to FIGS. 3 and 4.

Taking an array type planar hall resistance sensor in this way adds the characteristics of each sensor to improve the output characteristics of the final sensor. This can be easily seen by looking at the curve on the graph of FIG. In FIG. 8, the curve L1 represents output characteristics of one planar Hall resistance sensor, and the curve L2 is output of a structure in which three planar Hall resistance sensors 100, 110, and 120 are arrayed as shown in FIG. 7. It is characteristic. As shown in FIG. 7, the structure in which the plurality of planar Hall resistance sensors 100, 110, and 120 are arrayed may be referred to as a modular planar Hall resistance sensor.

9 is a structural diagram of a biaxial sensor to which a planar Hall resistance sensor according to an exemplary embodiment of the present invention is applied. Figure 9 shows a two-axis sensor (plane Hall resistance sensor) capable of sensing the geomagnetic of the X, Y bi-axis. Hall sensors must be erected in the vertical direction to detect geomagnetism in the X and Y axes, but plane Hall resistance sensors do not need to be erected in the vertical direction because they detect a magnetic field parallel to the sensor plane. Accordingly, in order to detect geomagnetism in the X-axis and Y-axis directions as shown in FIG. 9, planar Hall resistance sensors 200 and 210 are installed in place of the hall sensor.

In order to manufacture the structure as shown in FIG. 9, when forming a magnetic thin film of one sensor (eg, 200), a permanent magnet is formed under the Si-wafer substrate so that the magnetic thin film is aligned by the magnetic field of the permanent magnet during sputtering. 200). Subsequently, during fabrication of the other sensor 210, the Si-wafer is rotated 90 degrees to change the magnetic field of the permanent magnet to 90 degrees so that a magnetic field is formed, thereby depositing a magnetic thin film to manufacture the sensor 210.

Alternatively, the magnetic thin film of the sensor 200 is aligned by annealing in the magnetic field after formation of the magnetic thin film of any one sensor (eg, 200). Thereafter, when the other sensor 210 is manufactured, the magnetic field is formed in a direction opposite to that of the sensor 200 through the permanent magnet to form a magnetic thin film.

As such, by arranging the X and Y-axis sensors accurately on the same substrate through a semiconductor manufacturing process, they contribute to accurate sensing and size reduction of an external magnetic field.

10 is a structural diagram of a three-axis sensor to which a planar Hall resistance sensor according to an embodiment of the present invention is applied. FIG. 10 illustrates a three-axis geomagnetic sensor using an X, Y axis plane hall resistance sensor and a Z axis hall sensor. In FIG. 10, the conventional InSb type Hall sensor 220 is combined with the biaxial planar Hall resistance sensors 200 and 210.

In the case of a Hall sensor using a Si-wafer substrate with an integrated three-axis geomagnetic sensor, a Hall sensor using an InSb thin film can be easily manufactured through the remaining space where the X and Y biaxial planar Hall resistance sensors are formed.

FIG. 11 is a diagram illustrating a method of manufacturing a planar Hall resistance sensor according to an exemplary embodiment of the present invention.

First, a substrate 20 (Si-wafer) is prepared (see FIG. 11 (a)), and a photoresist (PR) 21 is applied to the upper surface of the substrate 20 (see FIG. 11 (b)). . Subsequently, sensor patterning is performed by etching (see FIG. 11C). Subsequently, the magnetic thin film 22 is deposited (see FIG. 11D) in the magnetic field, and then the photoresist 21 on the substrate 20 is removed, and the sensor element 30 (sensor thin film) on the substrate 20 is removed. Is formed (see FIG. 11E). Here, in the process of depositing the magnetic thin film 22 in the magnetic field (see (d) of FIG. 11), a magnetic field is applied to the bottom of the substrate holder by using a permanent magnet during sputtering. If the process of depositing the magnetic thin film 22 in the magnetic field is not used, an annealing process in the magnetic field of the magnetic thin film produced through the magnetic field annealing apparatus is performed after the magnetic thin film deposition and photoresist removal. In the process of removing the photoresist 21 on the substrate 20, a lift off method is used. In the case of the conventional etching method, it is not easy to find a thin film etching apparatus for etching a multilayer thin film, and thus the sameness of the sensor is detrimental due to over etching due to the concentration of the thin film etching apparatus, reaction time, and the like. In addition, the time for the thin film etching process becomes longer and the cost of the sensor increases in the equipment operation of the thin film etching equipment. In the case of conventional ion milling (vacuum equipment), a very uniform patterning is possible, but the time required for the process is not only long but also increases the cost of the sensor due to expensive equipment and equipment operation.

After the sensor element 30 is formed on the substrate 20 as shown in FIG. 11E, the photoresist 31 is again applied thereon (see FIG. 11F), and then electrode patterning is performed. (See FIG. 11 (g)). Subsequently, after depositing the electrode thin film 32 thereon (see FIG. 11 (h)), the photoresist 31 is removed by a lift-off method to form an electrode pattern (see FIG. 11 (i)). .

Then, the photoresist 33 is again applied thereon (see FIG. 11 (j)), and then insulator patterning is performed (see FIG. 11 (k)). Subsequently, after the insulating thin film 34 is deposited (see FIG. 11 (l)), the photoresist 33 is removed by a lift-off method to form an insulating film pattern (see FIG. 11 (m)). .

This completes the manufacture of the uniaxial flat Hall resistance sensor with the sensor thin film 30 of the embodiment of the present invention.

FIG. 12 is a diagram illustrating a method of manufacturing the biaxial sensor of FIG. 9, and illustrates a method of manufacturing the planar Hall resistance sensor of the X and Y biaxial axes.

First, a substrate 40 (Si-wafer) is prepared (see FIG. 12A), and a photoresist (PR) 41 is applied to the top surface of the substrate 40 (see FIG. 12B). . Subsequently, sensor patterning is performed for any one sensor (the sensor of one of the X and Y axes) by etching (see FIG. 12C). Thereafter, the magnetic thin film 42 is deposited (see FIG. 12D), and then the photoresist 41 on the substrate 40 is removed in a lift-off manner. A sensor thin film 30 is formed (see FIG. 12E). On the other hand, when the process of FIG. 12 (d) is not magnetic thin film deposition through magnetic field application (that is, when the magnetic thin film is deposited without magnetic field application), the annealing in the magnetic field after the process of FIG. The process (refer FIG. 12 (f)) is performed. Thereafter, the photoresist 43 is applied thereon (see Fig. 12G), and then sensor patterning for another sensor is performed (see Fig. 12H).

Subsequently, after depositing the magnetic thin film 44 in the magnetic field (see FIG. 12 (i)), the photoresist 43 on the substrate 40 is removed by the lift-off method. Sensor element 30 (sensor thin film) is formed (see FIG. 12 (j)).

After forming the sensor elements 30 for the X and Y-axis sensors on the substrate 40 so as to be spaced apart from each other, as shown in FIG. 12 (j), the photoresist 45 is applied thereon again (FIG. 12 (k). Electrode patterning is performed (see (l) of FIG. 12). Subsequently, after depositing the electrode thin film 46 thereon (see FIG. 12 (m)), the photoresist 45 is removed by a lift-off method to form an electrode pattern (see FIG. 12 (n)). .

Then, the photoresist 47 is again applied thereon (see Fig. 12 (o)) and then insulator patterning is performed (see Fig. 12 (p)). Subsequently, after the insulating thin film 48 is deposited (see FIG. 12 (q)), the photoresist 47 is removed by a lift-off method to form an insulating film pattern (see FIG. 12 (r)). ).

This completes the manufacture of the X, Y biaxial planar Hall resistance sensor with the sensor thin film 30 of the embodiment of the present invention.

FIG. 13 is a diagram illustrating a method of manufacturing the 3-axis sensor of FIG. 10, and illustrates a method of manufacturing a structure in which a planar Hall resistance sensor of X and Y axes and a Hall sensor of Z axis are combined.

A substrate 60 (Si-wafer) is prepared (see FIG. 13A), and a photoresist (PR) 61 is applied to the upper surface of the substrate 60 (see FIG. 13B). Subsequently, sensor patterning of one of the X and Y axis sensors is performed by etching (see FIG. 13C). Reference numeral 62 in FIG. 13C denotes a patterned shape. Thereafter, when the photoresist 61 is removed by magnetic thin film deposition and lift-off, a sensor element of one sensor 200 is formed as shown in FIG.

Thereafter, the photoresist (PR) 63 is applied again to the upper surface of the substrate 60, and the sensor patterning of the other one of the X and Y axis sensors is performed by etching (see FIG. 13E). . Reference numeral 64 in (e) of FIG. 13 means a patterned shape. Thereafter, when the photoresist 63 is removed by the magnetic thin film deposition and the lift-off method, the sensor element of the other sensor 210 is formed as shown in FIG.

Subsequently, photoresist (PR) 65 is again applied to the upper surface of the substrate 60, and patterning of the hall sensor is performed by etching (see FIG. 13 (g)). Reference numeral 66 in FIG. 13G denotes a patterned shape. Thereafter, when the photoresist 65 is removed by the InSb thin film deposition and the lift-off method, the sensor element of the hall sensor 220 is formed as shown in FIG. 13 (h).

After the sensor elements 200, 210, and 220 of the X, Y, and Z axes are formed on the substrate 60 as shown in FIG. 13H, the photoresist 68 is applied thereon, and then electrode patterning is performed. (See FIG. 13 (i)). Reference numeral 68 in (i) of FIG. 13 means a patterned shape. Subsequently, after depositing the electrode thin film 69 thereon, the photoresist 68 is removed by a lift-off method to form an electrode pattern (see FIG. 13 (j)).

Then, the photoresist 70 is applied again thereon, and then insulator patterning is performed (see FIG. 13 (k)). Subsequently, after the insulating thin film is deposited thereon, the photoresist 70 is removed by a lift-off method to form an insulating film pattern (see FIG. 13 (l)).

By doing so, the X and Y biaxial planar Hall resistance sensors having the sensor thin film 30 according to the embodiment of the present invention and the Z axis Hall sensor are combined to complete the manufacture of the structure.

On the other hand, the present invention is not limited only to the above-described embodiments and can be carried out by modifications and variations within the scope not departing from the gist of the present invention, the technical idea that such modifications and variations are also within the scope of the claims Must see

1 is a view illustrating a film formation pattern of a conventional planar Hall resistance sensor.

2 is an input / output structure diagram of a conventional planar hall resistance sensor.

3 is a diagram illustrating a sensor thin film structure of a planar Hall resistance sensor according to an exemplary embodiment of the present invention.

4A to 4C are graphs illustrating output characteristics of a conventional bi-layer type planar Hall resistance sensor and a planar Hall resistance sensor according to an exemplary embodiment of the present invention.

5 is a graph showing output characteristics of a conventional bi-layer type flat hall resistance sensor and a flat hall resistance sensor according to an exemplary embodiment of the present invention.

Figure 6 is a graph showing the results of the experiment by adjusting the thickness of the nonmagnetic layer of the planar Hall resistance sensor according to an embodiment of the present invention.

7 is a structural diagram of a planar Hall resistance sensor according to an exemplary embodiment of the present invention configured as an array type.

FIG. 8 is a graph for describing output characteristics of the array type planar hall resistance sensor of FIG. 7.

9 is a structural diagram of a biaxial sensor to which a planar Hall resistance sensor according to an exemplary embodiment of the present invention is applied.

10 is a structural diagram of a three-axis sensor to which a planar Hall resistance sensor according to an embodiment of the present invention is applied.

11 is a view illustrating a method of manufacturing a planar Hall resistance sensor according to an embodiment of the present invention.

FIG. 12 is a diagram illustrating a method of manufacturing the biaxial sensor of FIG. 9.

FIG. 13 is a diagram illustrating a method of manufacturing the triaxial sensor of FIG. 10.

Description of the Related Art

10 substrate 11 seed layer

12: ferromagnetic layer 13: ferromagnetic layer

14 nonmagnetic layer 15 antiferromagnetic layer

16: cap layer 30: sensor thin film

Claims (13)

Planar Hall resistance sensor, characterized in that the non-magnetic layer is laminated inside the fixed layer of the sensor film of the bi-layer structure. The method according to claim 1, And the nonmagnetic layer is laminated between the antiferromagnetic layer and the ferromagnetic layer in the fixed layer. The method according to claim 1 or 2, The nonmagnetic layer is a planar Hall resistance sensor, characterized in that composed of any one of a nonmagnetic material of Cu, Ta, Ru, Pd. The method according to claim 1 or 2, And the nonmagnetic layer has a thickness of 0.1 to 0.8 nm. A planar Hall resistance sensor, characterized in that a plurality of planar Hall resistance sensors in which a nonmagnetic layer is stacked in a fixed layer of a sensor thin film having a bi-layer structure. The method according to claim 5, And the nonmagnetic layer is laminated between the antiferromagnetic layer and the ferromagnetic layer in the fixed layer. The method according to claim 5 or 6, The nonmagnetic layer is a planar Hall resistance sensor, characterized in that composed of any one of a nonmagnetic material of Cu, Ta, Ru, Pd. The method according to claim 5 or 6, And the nonmagnetic layer has a thickness of 0.1 to 0.8 nm. A first planar Hall resistance sensor in which a nonmagnetic layer is stacked inside a fixed layer of a sensor thin film having a bi-layer structure and performing geomagnetic sensing in either of the X and Y axes; And It is formed in a direction perpendicular to the first planar Hall resistance sensor, a non-magnetic layer is laminated inside the fixed layer of the sensor film of the bi-layer type structure and performs a geomagnetic detection in the remaining one axis direction of the X, Y axis And a second planar hall resistance sensor. The method according to claim 9, And the nonmagnetic layer is laminated between the antiferromagnetic layer and the ferromagnetic layer in the fixed layer. The method according to claim 9 or 10, The nonmagnetic layer is a planar Hall resistance sensor, characterized in that composed of any one of a nonmagnetic material of Cu, Ta, Ru, Pd. The method according to claim 9 or 10, And the nonmagnetic layer has a thickness of 0.1 to 0.8 nm. The method according to claim 9 or 10, Hall sensor is a multi-axis sensor, characterized in that additionally installed for the detection of the geomagnetic in the Z-axis direction.

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