KR20110040143A - Polyacetal resin, method of synthesizing polyacetal resin and photoresist composition - Google Patents

Abstract

PURPOSE: A polyacetal resin is provided to improve high-sensitivity, high definition, high etch tolerance, and a low outgas amount property, and to obtain good photoresist pattern profiles. CONSTITUTION: A polyacetal resin is represented by chemical formula 1. In chemical formula 1, X and Y are a C3-30 alkyl group, monocyclic or polycyclic C3-30 alkyl group, allyl group, C6-30 aryl group, or benzyl group, wherein at least one hydrogen atom of C3-30 alkyl group, monocyclic or polycyclic C3-30 alkyl group, allyl group, C6-30 aryl group, or benzyl group is substituted with C1-10 alkyl group or C1-10 alkoxy group containing or not containing ether, ester, carbonyl, acetal, epoxy, nitrile or aldehyde; and n is an integer 1-20.

Description

POLYACETAL RESIN, METHOD OF SYNTHESIZING POLYACETAL RESIN AND PHOTORESIST COMPOSITION}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the manufacture of semiconductor devices, and more particularly, to a photoresist composition comprising a polyacetal resin, a method for synthesizing the same, and a polyacetal resin used in the manufacture of a semiconductor device.

With the high integration of semiconductor devices, ultrafine patterns of 0.10 µm or less are required for the manufacture of ultra large scale integration (ULSI) and the like. Accordingly, the exposure wavelength is further shortened in the g-ray or i-ray region used in the prior art, and attention has been paid to lithography using far ultraviolet rays, KrF excimer laser, ArF excimer laser, EUV, X-ray and electron beam. In particular, electron beam lithography is a next generation pattern formation technology, and development of a high sensitivity and high resolution photoresist corresponding thereto is required.

High sensitivity of the photoresist is associated with the power source of the electron beam. In other words, the higher the sensitivity, the smaller the power supply can be defined. However, if the sensitivity is poor, a higher power supply is required, which is directly related to the processing speed of the wafer. By the way, in an electron beam photoresist, since sensitivity, resolution, and line edge roughness are trade-off with each other, high sensitivity can worsen not only the resolution but also the line edge roughness. . For this reason, there is a strong demand for the development of a resist that simultaneously satisfies characteristics such as sensitivity, resolution, and line edge roughness.

One aspect of the present invention is a polyacetal resin capable of making the shape of the photoresist pattern high sensitivity, high resolution, high etching resistance, low outgas amount and the resulting photoresist required in lithography capable of forming a fine pattern, the synthesis thereof It provides a photoresist composition comprising a method and a polyacetal resin.

Polyacetal resin according to an aspect of the present invention is a compound represented by the following formula (1).

[Formula 1]

In Chemical Formula 1,

X and Y are each independently a C ₃ -C ₃₀ alkyl group, a monocyclic or polycyclic C ₃ -C ₃₀ alkyl group, an allyl group, a C ₆ -C ₃₀ aryl group or a benzyl group, wherein the C ₃ -C ₃₀ alkyl group , At least one hydrogen atom of a monocyclic or polycyclic C ₃ -C ₃₀ alkyl group, an allyl group, a C ₆ -C ₃₀ aryl group or a benzyl group is an ether group, an ester group, a carbonyl group, an acetal group, an epoxy group, a nitrile group or Unsubstituted or substituted with a C ₁ -C ₁₀ alkyl group or a C ₁ -C ₁₀ alkoxy group, a C ₁ -C ₄ perflow alkyl group, a C ₁ -C ₁₀ hydroxy alkyl group or a cyano group, with or without an aldehyde group,

n is an integer from 1 to 20.

Here, the polyacetal resin may be, for example, a compound represented by the following Chemical Formula 2 or the following Chemical Formula 3.

[Formula 2]

(3)

In Chemical Formulas 2 and 3,

n is an integer of 1-20, respectively.

Here, the polyacetal resin may have a polystyrene reduced weight average molecular weight of 500 to 100,000.

On the other hand, the method for synthesizing a polyacetal resin according to an aspect of the present invention includes the step of polycondensing the compound represented by the formula (4) and the compound represented by the formula (5).

[Formula 4]

In Chemical Formula 4,

X is a C ₃ -C ₃₀ alkyl group, monocyclic or polycyclic C ₃ -C ₃₀ alkyl group, allyl group, C ₆ -C ₃₀ aryl group or benzyl group, wherein the C ₃ -C ₃₀ alkyl group, monocyclic or polycyclic At least one hydrogen atom of a C ₃ -C ₃₀ alkyl group, an allyl group, a C ₆ -C ₃₀ aryl group or a benzyl group contains or does not contain an ether group, an ester group, a carbonyl group, an acetal group, an epoxy group, a nitrile group or an aldehyde group Unsubstituted or substituted with a C ₁ -C ₁₀ alkyl group or a C ₁ -C ₁₀ alkoxy group, a C ₁ -C ₄ perflow alkyl group, a C ₁ -C ₁₀ hydroxy alkyl group or a cyano group.

[Chemical Formula 5]

In Formula 5,

Y is a C ₃ -C ₃₀ alkyl group, monocyclic or polycyclic C ₃ -C ₃₀ alkyl group, allyl group, C ₆ -C ₃₀ aryl group or benzyl group, wherein the C ₃ -C ₃₀ alkyl group, monocyclic or polycyclic At least one hydrogen atom of a C ₃ -C ₃₀ alkyl group, an allyl group, a C ₆ -C ₃₀ aryl group or a benzyl group contains, or contains, an ether group, an ester group, a carbonyl group, an acetal group, an epoxy group, a nitrile group or an aldehyde group Unsubstituted or substituted with an unsubstituted C ₁ -C ₁₀ alkyl group or C ₁ -C ₁₀ alkoxy group, C ₁ -C ₄ perflow alkyl group, C ₁ -C ₁₀ hydroxy alkyl group or cyano group,

m is an integer of 1-2.

Here, the polycondensation can be carried out in the presence of an acid or the acid and the dehydrating agent.

On the other hand, the photoresist composition according to an aspect of the present invention includes a polyacetal resin, a photoacid generator and a solvent represented by the formula (1).

Here, the polyacetal resin may be 3 to 20 parts by weight based on 100 parts by weight of the total photoresist composition.

Here, the photoacid generator may be 0.3 to 15 parts by weight based on 100 parts by weight of the total solids of the photoresist composition.

According to an aspect of the present invention, it is possible to meet the high sensitivity, high resolution, high etching resistance, low outgas content characteristics of the photoresist required in lithography, for example, EUV lithography capable of forming a fine pattern, and also good photoresist A pattern shape can be obtained.

Hereinafter, a polyacetal resin, a synthesis method thereof, and a photoresist composition according to an aspect of the present invention will be described in detail.

Polyacetal  Suzy

The polyacetal resin is a compound represented by the following formula (1).

[Formula 1]

In Chemical Formula 1,

X and Y are each independently a C ₃ -C ₃₀ alkyl group, a monocyclic or polycyclic C ₃ -C ₃₀ alkyl group, an allyl group, a C ₆ -C ₃₀ aryl group or a benzyl group, wherein the C ₃ -C ₃₀ alkyl group , At least one hydrogen atom of a monocyclic or polycyclic C ₃ -C ₃₀ alkyl group, an allyl group, a C ₆ -C ₃₀ aryl group or a benzyl group is an ether group, an ester group, a carbonyl group, an acetal group, an epoxy group, a nitrile group or Unsubstituted or substituted with a C ₁ -C ₁₀ alkyl group or a C ₁ -C ₁₀ alkoxy group, a C ₁ -C ₄ perflow alkyl group, a C ₁ -C ₁₀ hydroxy alkyl group or a cyano group, with or without an aldehyde group,

n is an integer from 1 to 20.

The polyacetal resin is a monomolecular compound having an acid dissociable structure, and may be used as one component of the photoresist composition. The polyacetal resin is a kind of molecular glass resist rather than a radical copolymer which is one component of the existing photoresist composition, and its molecular weight is relatively smaller than that of the conventional radical copolymer. That is, the polystyrene reduced weight average molecular weight of the polyacetal resin by gel permeation chromatography (GPC) may be 500 to 100,000, and considering the sensitivity, developability, coatability, heat resistance, etc. to the photoresist, 5,000 is preferred. When the polystyrene reduced weight average molecular weight of the polyacetal resin is less than 500, the resist pattern may be easily collapsed or deformed. When the polystyrene reduced weight average molecular weight exceeds 100,000, the resolution of the resist pattern may decrease. The molecular weight distribution of the polyacetal resin is not particularly limited, but may be, for example, 1 to 5, preferably 1 to 3.

Specific examples of the polyacetal resin may include a compound represented by the following Chemical Formula 2 or a compound represented by the following Chemical Formula 3, but the present invention is not limited thereto.

[Formula 2]

(3)

In Chemical Formulas 2 and 3,

n is an integer of 1-20, respectively.

The polyacetal resin is insoluble or poorly soluble in aqueous alkali solution, but may be soluble in some cases. In addition, the polyacetal resin may have an acid sensitive functional group in the side chain portion, but may not have an acid sensitive functional group in some cases.

The polyacetal resin may be a binary or polymembered copolymer. In addition, the polyacetal resin may be, for example, a block copolymer, a random copolymer or a graft copolymer. In addition, the polyacetal resin may have a linear structure as well as a branched structure, and may have a crosslinked structure. In addition, the polyacetal resin may be a blend containing one or two or more kinds in any ratio.

The polyacetal resin may be synthesized by, for example, polycondensing the compound represented by the following formula (4) and the compound represented by the following formula (5).

[Formula 4]

In Chemical Formula 4,

X is a C ₃ -C ₃₀ alkyl group, monocyclic or polycyclic C ₃ -C ₃₀ alkyl group, allyl group, C ₆ -C ₃₀ aryl group or benzyl group, wherein the C ₃ -C ₃₀ alkyl group, monocyclic or polycyclic At least one hydrogen atom of a C ₃ -C ₃₀ alkyl group, an allyl group, a C ₆ -C ₃₀ aryl group or a benzyl group contains, or contains, an ether group, an ester group, a carbonyl group, an acetal group, an epoxy group, a nitrile group or an aldehyde group Unsubstituted or substituted with an unsubstituted C ₁ -C ₁₀ alkyl group or C ₁ -C ₁₀ alkoxy group, C ₁ -C ₄ perflow alkyl group, C ₁ -C ₁₀ hydroxy alkyl group or cyano group.

[Chemical Formula 5]

In Formula 5,

Y is a C ₃ -C ₃₀ alkyl group, monocyclic or polycyclic C ₃ -C ₃₀ alkyl group, allyl group, C ₆ -C ₃₀ aryl group or benzyl group, wherein the C ₃ -C ₃₀ alkyl group, monocyclic or polycyclic At least one hydrogen atom of a C ₃ -C ₃₀ alkyl group, an allyl group, a C ₆ -C ₃₀ aryl group or a benzyl group contains or does not contain an ether group, an ester group, a carbonyl group, an acetal group, an epoxy group, a nitrile group or an aldehyde group Unsubstituted or substituted with a C ₁ -C ₁₀ alkyl group or a C ₁ -C ₁₀ alkoxy group, a C ₁ -C ₄ perflow alkyl group, a C ₁ -C ₁₀ hydroxy alkyl group or a cyano group,

m is an integer of 1-2.

The polycondensation may involve an dehydration condensation reaction carried out in the presence of an acid or the acid and a dehydrating agent. Here, the acid is not particularly limited, but for example, p-toluenesulfonic acid, hydrochloric acid (HCl), sulfuric acid (H ₂ SO ₄ ), boron trifluoride (BF ₃ ), and the like. May be used alone or in combination of two or more thereof. In addition, the dehydrating agent is not particularly limited, and for example, trialkyl orthoformate may be used. The solvent that can be used during the polycondensation is not particularly limited, but for example, water, alcohols (alkyl alcohols such as methanol, ethanol and propyl alcohol), ketones (dialkyl ketones such as acetone) , Ethers (such as dialkyl ethers such as diethyl ether), esters, amides and the like may be used alone or in combination of two or more thereof. In addition, various solvents may be introduced. After the polycondensation is completed, it is preferable that unreacted substances and by-products remaining in the reaction mixture are removed by precipitation with a solvent.

Photoresist  Composition

Photoresist composition according to an aspect of the present invention comprises a polyacetal resin, a photoacid generator and a solvent represented by the formula (1). In addition, the photoresist composition may further include other additives as necessary. Although it does not specifically limit as said other additive, For example, surfactant, water-soluble alcohol, basic additives, etc. can be used individually or in combination of 2 or more types. Here, since the polyacetal resin constituting the photoresist composition according to an aspect of the present invention is the same as described above, redundant description will be omitted below.

The content of the polyacetal resin may be 3 to 20 parts by weight based on 100 parts by weight of the total photoresist composition. When the content of the polyacetal resin is less than 3 parts by weight based on 100 parts by weight of the total photoresist composition, the thickness of the resist film may be too thin to match the desired resist pattern thickness, and when it exceeds 20 parts by weight, the thickness of the resist film may be too high. Can be thickened.

Although it does not specifically limit as said photo-acid generator, For example, at least 1 can be used among the compounds represented by following formula (6) and (7).

[Formula 6]

[Formula 7]

In Chemical Formulas 6 and 7,

R ₁ and R ₂ each independently represent an alkyl group, an allyl group, a perfluoroalkyl group, a benzyl group, or an aryl group,

R ₃ , R ₄ and R ₅ each independently represent a hydrogen atom, an alkyl group, a halogen group, an alkoxy group, an aryl group, a thiophenoxy group, a thioalkoxy group or an alkoxycarbonylmethoxy group,

A ^- is _{^{- OSO 2 CF 3, - OSO}} 2 C 4 F 9, ^- OSO ₂ C ₈ F _17, ^- N (CF _{3) 2, ^{- N (C 2 F 5)}} 2, _{^{- N (C 4 F 9)}} 2, ^- C (CF _{3) 3, ^{- C (C 2 F 5)}} 3, _{^{- C (C 4 F 9)}} 3 , or The compound represented by the following formula (8).

[Formula 8]

In Chemical Formula 8,

X is a monocyclic or polycyclic C ₃ -C ₃₀ hydrocarbon group, benzyl group, C ₆ -C ₂₀ aryl group, C ₁ -C ₂₀ alkyl group, C ₁ -C ₂₀ haloalkyl group, C ₁ -C ₂₀ alkylsulfonyl group , C ₁ -C ₂₀ alkoxy group, C ₁ -C ₂₀ allyl group or cyano group, wherein the monocyclic or polycyclic C ₃ -C ₃₀ hydrocarbon group, benzyl group, C ₆ -C ₂₀ aryl group, C _1- At least one hydrogen atom of a C ₂₀ alkyl group, a C ₁ -C ₂₀ haloalkyl group, a C ₁ -C ₂₀ alkylsulfonyl group, a C ₁ -C ₂₀ alkoxy group or a C ₁ -C ₂₀ allyl group is selected from an ether group, an ester group, a carbonyl group, Substituted or unsubstituted with an acetal group, a nitrile group, a cyano group, a hydroxyl group, a carboxyl group, or an aldehyde group,

R is a C ₁ -C ₁₀ alkyl group, a C ₁ -C ₁₀ alkoxy group, a nitrogen atom, a sulfur atom, a fluorine atom or an oxygen atom,

m is an integer of 0-2.

Examples of the cationic moiety among the compounds represented by Formulas 6 and 7 include compounds represented by the following Formulas 9a to 9p.

Examples of the compound represented by the formula (8) include compounds represented by the following formulas (10a to 10l), (11a to 11o), and (12a to 12i).

The content of the photoacid generator may be 0.3 to 15 parts by weight based on 100 parts by weight of the total solids of the photoresist composition, preferably 2 to 10 parts by weight. When the content of the photoacid generator is less than 0.3 part by weight based on 100 parts by weight of the total solid content of the composition, the generation of acid is less, the resolution may be reduced, and the flexibility of the pattern may be deteriorated. Excessive thickness loss of the upper part of the resist film may be large, light absorption of the photoacid generator may be increased, and transparency of the resin may be reduced, and verticality of the pattern may be significantly decreased.

The solvent included in the photoresist composition is not particularly limited because it may dissolve the solid content of the composition and have an appropriate drying speed and viscosity. For example, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl Ether, methyl cellosolve acetate, ethyl cellosolve acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, methyl isopropyl ketone, cyclohexanone, methyl 2-hydroxypropion Nate, ethyl 2-hydroxypropionate, 2-heptanone, ethyl lactate, gamma-butyrolactone, etc. can be used individually or in combination of 2 or more types. The amount of the solvent may be adjusted to be uniformly formed on the wafer using an appropriate amount depending on the physical properties of the solvent, that is, volatility, viscosity, and the like.

Hereinafter, a method of forming a pattern on a substrate using a photoresist composition according to an aspect of the present invention will be described in detail. Here, the pattern forming method may be a method for forming a photoresist pattern on the substrate, but the present invention is not limited thereto. For example, the present invention may include formation of a pattern of a semiconductor device and / or a display device using the photoresist pattern, for example, a transistor, a capacitor, and a metal wiring.

According to an aspect of the present invention, there is provided a method of forming a pattern, by applying and drying the photoresist composition on a substrate to form a photoresist film, selectively exposing the photoresist film, and developing the exposed photoresist film. It includes. Hereinafter, each step will be described in detail.

First, the photoresist composition is coated on a base ratio substrate. The substrate is not particularly limited, and for example, may be arbitrarily selected from a silicon wafer, a glass substrate, a flexible substrate, and the like. The coating method can be arbitrarily selected from among spin coating method, dipping method, spray method, transfer method, spill coating, roll coating and the like.

Next, light or heat is applied to the photoresist composition applied on the substrate. As a result, the solvent of the composition may be evaporated to form a photoresist film. At this time, curing of the photoresist film may occur slightly.

Next, the photoresist film is selectively exposed. Here, selectively exposing refers to exposing to form a desired photoresist pattern. For example, a mask may be used to selectively form the desired photoresist pattern upon exposure. The light source at the time of exposure can be selected according to the kind of photo-acid generator from I-ray which is ultraviolet rays, KrF excimer laser which is far ultraviolet rays, ArF excimer laser, F2 excimer laser, X-ray, and electron beam which is a charged particle beam. After the exposure, the exposed photoresist film may be cured as necessary.

Next, the exposed photoresist film is developed using a developer. As a result, a photoresist pattern may be formed. As said developing solution, for example, sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium methane silicate, ammonia water, ethylamine, n-propylamine, triethylamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide The aqueous solution which side, etc. were independent or in combination of 2 or more types can be used. Among them, an aqueous solution containing tetramethylammonium hydroxide can be used.

According to one aspect of the present invention described above, it is possible to improve the characteristics of the high sensitivity, high resolution, high etching resistance, low outgas amount of the photoresist required in the lithography capable of forming a fine pattern, and also to form a good photoresist pattern shape. You can get it. Through this, a semiconductor device including an ultra fine pattern may be manufactured.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art to which the present invention pertains can realize that the present invention can be implemented in other specific forms without changing the technical spirit or essential features. I can understand that.

Therefore, since the embodiments described above are provided to completely inform the scope of the invention to those skilled in the art, it should be understood that they are exemplary in all respects and not limited. The invention is only defined by the scope of the claims.

Claims (9)

Polyacetal resin represented by the formula (1).

---- (One) (In the formula 1, X and Y are each independently a C ₃ -C ₃₀ alkyl group, a monocyclic or polycyclic C ₃ -C ₃₀ alkyl group, an allyl group, a C ₆ -C ₃₀ aryl group or a benzyl group, wherein the C ₃ -C ₃₀ alkyl group , At least one hydrogen atom of a monocyclic or polycyclic C ₃ -C ₃₀ alkyl group, an allyl group, a C ₆ -C ₃₀ aryl group or a benzyl group is an ether group, an ester group, a carbonyl group, an acetal group, an epoxy group, a nitrile group or Unsubstituted or substituted with a C ₁ -C ₁₀ alkyl group or a C ₁ -C ₁₀ alkoxy group, a C ₁ -C ₄ perflow alkyl group, a C ₁ -C ₁₀ hydroxy alkyl group or a cyano group, with or without an aldehyde group, n is an integer from 1 to 20.) The method of claim 1, Polyacetal resin represented by the following formula (2) or (3).

---- (2)

---- (3) (In Chemical Formulas 2 and 3, n is an integer of 1 to 20, respectively.) The method of claim 1, A polyacetal resin having a polystyrene reduced weight average molecular weight of 500 to 100,000. A method for synthesizing a polyacetal resin comprising polycondensing a compound represented by the following Chemical Formula 4 and a compound represented by the following Chemical Formula 5.

---- (4) (In Formula 4, X is a C ₃ -C ₃₀ alkyl group, monocyclic or polycyclic C ₃ -C ₃₀ alkyl group, allyl group, C ₆ -C ₃₀ aryl group or benzyl group, wherein the C ₃ -C ₃₀ alkyl group, monocyclic or polycyclic At least one hydrogen atom of a C ₃ -C ₃₀ alkyl group, an allyl group, a C ₆ -C ₃₀ aryl group or a benzyl group contains or does not contain an ether group, an ester group, a carbonyl group, an acetal group, an epoxy group, a nitrile group or an aldehyde group Unsubstituted or substituted with a C ₁ -C ₁₀ alkyl group or a C ₁ -C ₁₀ alkoxy group, a C ₁ -C ₄ perflow alkyl group, a C ₁ -C ₁₀ hydroxy alkyl group or a cyano group.)

---- (5) (In Chemical Formula 5, Y is a C ₃ -C ₃₀ alkyl group, monocyclic or polycyclic C ₃ -C ₃₀ alkyl group, allyl group, C ₆ -C ₃₀ aryl group or benzyl group, wherein the C ₃ -C ₃₀ alkyl group, monocyclic or polycyclic At least one hydrogen atom of a C ₃ -C ₃₀ alkyl group, an allyl group, a C ₆ -C ₃₀ aryl group or a benzyl group contains or does not contain an ether group, an ester group, a carbonyl group, an acetal group, an epoxy group, a nitrile group or an aldehyde group Unsubstituted or substituted with a C ₁ -C ₁₀ alkyl group or a C ₁ -C ₁₀ alkoxy group, a C ₁ -C ₄ perflow alkyl group, a C ₁ -C ₁₀ hydroxy alkyl group or a cyano group, m is an integer of 1 to 2.) The method of claim 4, wherein And said polycondensation is carried out in the presence of an acid or said acid and a dehydrating agent. A photoresist composition comprising a polyacetal resin, a photoacid generator and a solvent represented by the following Chemical Formula 1.

---- (One) (In the formula 1, X and Y are each independently a C ₃ -C ₃₀ alkyl group, a monocyclic or polycyclic C ₃ -C ₃₀ alkyl group, an allyl group, a C ₆ -C ₃₀ aryl group or a benzyl group, wherein the C ₃ -C ₃₀ alkyl group , At least one hydrogen atom of a monocyclic or polycyclic C ₃ -C ₃₀ alkyl group, an allyl group, a C ₆ -C ₃₀ aryl group or a benzyl group is an ether group, an ester group, a carbonyl group, an acetal group, an epoxy group, a nitrile group or Unsubstituted or substituted with a C ₁ -C ₁₀ alkyl group or a C ₁ -C ₁₀ alkoxy group, a C ₁ -C ₄ perflow alkyl group, a C ₁ -C ₁₀ hydroxy alkyl group or a cyano group, with or without an aldehyde group, n is an integer from 1 to 20.) The method of claim 6, Wherein the polyacetal resin is 3 to 20 parts by weight based on 100 parts by weight of the total photoresist composition. The method of claim 6, The photoresist composition of the photoacid generator is at least one of the compounds represented by the following formula (6) and (7).

---- (6)

---- (7)  (In Chemical Formulas 6 and 7, R ₁ and R ₂ each independently represent an alkyl group, an allyl group, a perfluoroalkyl group, a benzyl group, or an aryl group, R ₃ , R ₄ and R ₅ each independently represent a hydrogen atom, an alkyl group, a halogen group, an alkoxy group, an aryl group, a thiophenoxy group, a thioalkoxy group or an alkoxycarbonylmethoxy group, A ^- is ^{_{- OSO 2 CF 3, - OSO}} 2 C 4 F 9, ^- OSO ₂ C ₈ F _17, ^- N (CF _{3) 2, ^{- N (C 2 F 5)}} 2, ^{_{- N (C 4 F 9)}} 2, ^- C (CF _{3) 3, ^{- C (C 2 F 5)}} 3, ^{_{- C (C 4 F 9)}} 3 , or The compound represented by the following formula (8).

---- (8) In Chemical Formula 8, X is a monocyclic or polycyclic C ₃ -C ₃₀ hydrocarbon group, benzyl group, C ₆ -C ₂₀ aryl group, C ₁ -C ₂₀ alkyl group, C ₁ -C ₂₀ haloalkyl group, C ₁ -C ₂₀ alkylsulfonyl group , C ₁ -C ₂₀ alkoxy group, C ₁ -C ₂₀ allyl group or cyano group, wherein the monocyclic or polycyclic C ₃ -C ₃₀ hydrocarbon group, benzyl group, C ₆ -C ₂₀ aryl group, C _1- At least one hydrogen atom of a C ₂₀ alkyl group, a C ₁ -C ₂₀ haloalkyl group, a C ₁ -C ₂₀ alkylsulfonyl group, a C ₁ -C ₂₀ alkoxy group or a C ₁ -C ₂₀ allyl group is selected from an ether group, an ester group, a carbonyl group, Substituted or unsubstituted with an acetal group, a nitrile group, a cyano group, a hydroxyl group, a carboxyl group, or an aldehyde group, R is a C ₁ -C ₁₀ alkyl group, a C ₁ -C ₁₀ alkoxy group, a nitrogen atom, a sulfur atom, a fluorine atom or an oxygen atom, m is an integer of 0 to 2). The method of claim 6, The photoresist composition is 0.3 to 15 parts by weight based on 100 parts by weight of the total solids of the photoresist composition.