KR20110027967A - Apparatus for depositting thin film - Google Patents

Abstract

PURPOSE: A thin film depositing device is provided to set a gas flow direction in a heating unit to pass through several heater cartridges to heat a gas, thereby controlling a wide temperature range. CONSTITUTION: A chamber(10) provides a space on which a thin film is deposited on a substrate. Injection valves(13a,13b) are installed on a pipe(29) supplying a gas to the inside of the chamber. A heating unit(19) is installed on a rear side pipe of an injection valve. The heating unit comprises a unit main body with an inlet and an outlet and a heater heating a gas. A gas path of the heating unit is filled with ceramic balls.

Description

Thin film deposition apparatus {Apparatus for depositting thin film}

The present invention relates to a thin film deposition apparatus, and more particularly, to an apparatus for depositing a thin film on a substrate in a CVD / PVD process of semiconductor, LCD, PDP production facilities.

Recently, the level of integration of semiconductor integrated circuits manufactured by semiconductor manufacturers has been increasing.

At present, research and development activities are shifting from the current efforts to manufacture DRAMs with megabit storage capacity to produce future DRAMs with gigabit storage capacity.

The DRAM contains capacitive devices that can provide as much capacity as possible while occupying as little area as possible.

Non-dielectric thin films currently used in the technology for providing capacitive elements include silicon oxide films or silicon nitride films.

These films have a dielectric constant of 10 or less, and among the thin film materials used in the future, there are tallium pentoxide (Ta ₂ O ₃ ) having a relative dielectric constant of about 20, barium titanate (BaTiO ₃ ) having a relative dielectric constant of about 300, and Metal oxides having strontium titanate (SrTiO ₃ ), or a mixture thereof, barium strontium titanate.

When the metal oxide thin film on the substrate is grown by this vapor phase chemical reaction, the substrate is placed on a susceptor placed in a vacuum-tight thin film deposition chamber, and the substrate is placed by a device such as a heater surrounded by the susceptor at a predetermined temperature. It is heated, and a mixed gas of the supply gas and the reaction gas (containing oxygen) is ejected onto the substrate through the gas injection head.

Chemical Vapor Deposition (CVD) is one of the thin film formation processes that are generally required in semiconductor integrated circuit processes.

This deposition method is a process in which at least one compound gas is introduced into a chamber prepared for a CVD process to form a thin film on a semiconductor wafer while causing a chemical reaction in a vapor phase with a substrate heated to a high temperature, for example, a semiconductor wafer.

As shown in FIG. 1, a CVD apparatus for performing such a CVD process includes a chamber 10, a shower head 11 and a substrate 100 provided inside the chamber 10 to inject a gas. A heater stage 12 to be placed, a deposition gas and a carrier gas, and injection valves 13a and 13b for supplying a backside gas and a carrier gas, and the like.

Therefore, if the inside of the chamber is vacuumed, and the substrate is heated to a high temperature through the heater stage, and then a reactive gas is introduced through each valve, the surface of the substrate heated to a high temperature while the reactive gas is rapidly scattered under vacuum conditions And chemical reaction, which eventually forms a thin film on the substrate.

Here, the deposition gas is a gas that is the main material of the film deposited on the substrate, is introduced into the chamber through the shower head, and chemically reacts on the substrate and is deposited on the film.

The back side gas is a gas that is introduced to maintain uniformity of the film deposited on the substrate, and is introduced into the backside of the substrate through a heater stage.

In addition, the carrier gas (Carrier gas) serves to transport the gas difficult to move itself according to the type of gas when the deposition gas and the backside gas is introduced into the chamber.

On the other hand, the role of the injection valve for supplying a reactive gas is as follows.

As shown in FIG. 2, the injection valve includes a valve body 16 having two inlet ports 14 and one outlet port 15, an electric diaphragm 17 for controlling the flow rate of gas, and the like. The carrier gas and the deposition gas (or backside gas) flow into the two inflow ports 14, and one discharge port 15 is connected to the chamber side.

Here, reference numeral 18 denotes a coil for operating the electric diaphragm.

Therefore, as shown in FIG. 3A, the deposition gas (or the backside gas) connected to another port of the injection valve is swept in while the carrier gas is introduced into the chamber through the injection valve.

At this time, when a current flows through the coil, as shown in FIG. 3B, the electric diaphragm moves up and down according to the direction of the current, and the amount of gas flowing into the chamber is adjusted according to the movement degree of the electric diaphragm.

However, as illustrated in FIG. 3C, in the conventional injection valve, there is a problem in that deposition gas (or backside gas) is deposited inside the pipe and the valve and is blocked in the process of flowing into the chamber.

That is, since deposition of the deposition gas (or backside gas) particles is not active and the inflow into the chamber is delayed, deposition occurs inside the pipe and the valve.

As a result, the gas supply is not smooth due to blockage in the piping or the valve, resulting in thin film thickness imbalance in the CVD process, and the thickness of the deposition film due to the temperature difference between the deposition gas and the backside gas of the heater stage. There is a problem in that the quality of the deposition film is degraded, such as a phenomenon that an uneven phenomenon occurs.

Accordingly, the present invention has been made in view of the above, and a new type of thin film deposition in which the temperature of the gas supplied into the chamber is heated and supplied to a desired temperature when the thin film is deposited on the substrate in the CVD / PVD process. By implementing the method, the inflow of gas into the chamber can be actively performed, and thus, a film having a uniform thickness can be completely eliminated such as a problem of clogging in the pipe or valve, a temperature difference between gases in the chamber, and the like. It is an object of the present invention to provide a thin film deposition apparatus capable of obtaining a high quality substrate deposited.

In addition, the present invention provides a thin film deposition apparatus that can be applied to all the piping of the vacuum equipment used for semiconductor manufacturing and liquid crystal manufacturing, as well as a gas supply device using a pipe such as carrier gas, deposition gas, backside gas. There is another purpose.

In order to achieve the above object, the thin film deposition apparatus provided in the present invention comprises a chamber, an injection valve for supplying gas into the chamber and a pipe, and a heating unit installed on the pipe. The heating unit is characterized in that the gas supplied to the inside of the chamber can be heated and supplied to a desired temperature.

Here, the heating unit is a unit body having an inlet and an outlet, a gas passage having a predetermined path formed inside the unit body and extending from the inlet to the outlet, and installed inside the gas passage to expose the gas flow. It is preferable to comprise in the form containing the heater etc. which heat a gas.

In the case of the heating unit, a controller for controlling the operation of the heater as a means for controlling the temperature of the gas supplied to the chamber, a gas temperature detection sensor and a heater temperature detection sensor that provide temperature information to the controller. It is desirable to apply.

In addition, the heating unit is characterized in that it can be installed and used in all the piping of the vacuum equipment used in the semiconductor manufacturing equipment or the liquid crystal manufacturing equipment, as well as the piping for supplying the carrier gas, the deposition gas, the backside gas and the like.

The thin film deposition apparatus provided by the present invention has the following advantages.

First, by heating the temperature of the gas provided in the chamber to a desired temperature by using a heating unit during the thin film deposition process, the inflow of the gas into the chamber can be actively made, thus the environment inside the chamber is optimal It is possible to improve the quality of the product, such as to obtain a film layer having a uniform thickness by composition in a state.

Second, the application range of the apparatus including the heating unit can be widely secured by piping such as carrier gas, deposition gas and backside gas, and piping of vacuum equipment used for semiconductor manufacturing and liquid crystal manufacturing. It can greatly improve the utility.

Third, by heating the gas by setting the gas flow direction in the heating unit in a zigzag manner via a plurality of heater cartridges, not only the temperature of the gas can be easily controlled but also a wide temperature range can be controlled.

Fourth, by filling the inside of the gas flow path with a ceramic ball, it is possible to shorten the heating time and to continuously maintain the state heated to the appropriate temperature.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

Figure 4 is a schematic diagram showing a thin film deposition apparatus according to an embodiment of the present invention.

As shown in FIG. 4, a chamber 10 is provided to provide a space for depositing a thin film on a substrate such as a semiconductor wafer in a CVD process or a PVD process, and the chamber 10 includes a shower head for gas injection. 11), the heater stage 12 for setting the substrate is provided, the pipe 29 for supplying gas to the chamber 10 side injection valve 13a for adjusting the supply of the deposition gas and the carrier gas ) And an injection valve 13b for supplying the backside gas and the carrier gas.

In particular, the one side on the pipe 29, preferably the rear end pipe 29 of each injection valve 13a, 13b to increase the temperature of the gas supplied into the chamber 10, that is, the chamber A heating unit 19 is installed for heating the gas supplied to 10 to a desired temperature.

Accordingly, all the gas flowing into the chamber 10 by the heating unit 19 can be heated to a high temperature, the movement of the gas particles can be active due to this heating.

As the movement of the gas particles whose temperature has been raised is increased, the gas is deposited inside the pipe 29 or the injection valves 13a and 13b before they reach the inside of the chamber 10, thereby completely eliminating clogging. have.

Here, only the example in which the heating unit 19 is applied to the pipe 29 to which the carrier gas, the deposition gas, and the backside gas are supplied is described. In addition, the heating unit 19 is a vacuum used for semiconductor manufacturing and liquid crystal manufacturing. Of course, it can be applied to all the piping of the installation.

5 and 6 are a perspective view and a cross-sectional view showing a heating unit of the thin film deposition apparatus according to an embodiment of the present invention.

5 and 6, the heating unit 19 includes a unit body 22 formed of a thin rectangular case, and an inlet 20 is provided on one side of the unit body 22. , The outlet 21 is provided on the other side, respectively.

At this time, the inlet 20 is a portion into which the gas at room temperature enters, and a pipe extending from an external gas supply source (not shown) is connected, and the outlet 21 is an injection valve 13a as a portion out of the hot gas. 13b and a pipe extending to the chamber 10 side.

In addition, a gas passage 23, which is a flow path for gas flow, is provided inside the unit body 20, in which case the gas passage 23 has a path in which a predetermined amount of gas can be sufficiently heated. Is done.

For example, the gas passage 23 is a zigzag-shaped passage in which a direction is changed several times in a section between the inlet 20 and the outlet 21, that is, a plurality of vertical sections 23a vertically side by side. As it is arranged in a horizontal section (23b) connecting the upper and lower ends of each vertical section (23a) can be made of a passage of the form that the entire section is through one.

Accordingly, the gas entering the inlet 20 flows out through the outlet 21 after flowing through the zigzag-shaped section, so that the gas can be heated while remaining sufficiently inside the unit body 22. .

In particular, the inside of the gas passage 23 is filled with a small granular ceramic ball 25, the ceramic ball 25 at this time is heated by the heater 24 to be described later, the heater 24 while dissipating heat Together with the heating of the gas.

Here, in the case of the ceramic ball 25 may be filled in a suitable amount in the inner space of the gas passage 23, it may be preferable to fill the inner space of the passage tightly in terms of enhancing the heat transfer effect.

The heater 24 for heating the gas is installed inside the gas passage 23 to serve to heat the gas flowing through the passage.

To this end, the heater 24 is formed in a cartridge form, is installed in a structure arranged side by side along the central axis of the gas passage 23 to enter from the lower portion of the unit body (22).

Of course, a gap in which gas can flow can be secured between the heater 24 and the passage wall surface.

The embodiment of the present invention provides a structure in which the heaters 24 are assigned one by one in the four vertical sections 23a constituting the gas passage 23.

At this time, the heater 24 is electrically connected to the controller 26 side and may be operated under the control of power supply.

On one side of the unit main body 22, sensor mounting portions 30a and 30b are provided up and down, respectively, and the gas temperature detection sensor 27 and the heater temperature detection sensor 28 described later are provided here. ) May be installed in a fastening structure, in which the sensor 27 for gas temperature detection is located in the gas passage 23 and the sensing part of the heater temperature detection sensor 28 is a heater 24. Is connected to the side.

7 is a cross-sectional view showing the flow of gas in the heating unit of the thin film deposition apparatus according to an embodiment of the present invention.

As shown in FIG. 7, the normal temperature gas introduced into the unit body 22 through the inlet 20 is heated to a predetermined temperature via the gas passage 23, and then the injection valve 13a ( 13 shows a flow of gas exiting the outlet 21 to be supplied to the side.

That is, the gas at room temperature, for example, the carrier gas, the deposition gas, the backside gas, etc., passes through the four vertical sections 23a of the gas passages 23 connected to each other.

At this time, the four vertical sections 23a connected to each other are filled with ceramic balls 25 having a small grain shape.

Then, a cartridge type heater 24 is inserted into the center of each passage of the four vertical sections 23a connected to each other.

At this time, the heater 24 heats the inside of the vertical section 23a and the ceramic ball 25.

By passing through the vertical section 23a in the heated state, that is, the gas passage 23 and the ceramic balls 25 therein, the gas flows into the injection valves 13a and 13b while maintaining a high temperature. Can be supplied.

8 is a schematic view showing a temperature control relationship in a heating unit of a thin film deposition apparatus according to an embodiment of the present invention.

As shown in FIG. 8, the controller 26 and a plurality of sensors are provided as a means for heating and controlling the temperature of the gas supplied to the injection valves 13a and 13b to a desired temperature, that is, a set temperature. do.

To this end, the heater 24 installed in the unit main body 22 of the heating unit 19 is controlled by the controller 26, and each sensor mounting portion 30a on the side of the unit main body 22 is provided. 30b are provided with a gas temperature detection sensor 27 and a heater temperature detection sensor 28 that provide gas and heater temperature information on the controller 26 side, respectively.

Accordingly, the controller 26 may control the temperature of the gas in accordance with the set temperature based on the temperature value input from each sensor.

For example, first enter the temperature value heated in the controller (Set point setting).

Next, the current temperature of the heater 24 and the gas is sensed.

Next, when the current temperature of the heater and the gas falls short of the temperature value to be heated, heating power for the heater is continuously supplied.

Next, when the current temperature of the heater and gas reaches or exceeds the temperature value to be heated, the heating power to the heater is cut off.

Here, the heating temperature of the gas controlled by the controller 26, that is, the high temperature gas temperature supplied to the chamber 10 via the heating unit 19 is set in the range of 50 ° C to 300 ° C for the backside gas. Can be.

Such a heating unit may be usefully applied to a chamber or a facility in which a vacuum environment is created.

The present invention provides an example in which the heating unit is applied as a means for supplying a hot backside gas to a heater stage inside a chamber for depositing a thin film on a substrate, or as a means for supplying a hot deposition gas to a shower head inside a chamber. .

In addition, the heating unit may be applied to all devices using a CVD processor among semiconductor manufacturing apparatuses, LCD manufacturing apparatuses, and PDP manufacturing apparatuses.

For example, it can be applied to all equipment that uses backside gas for the production of semiconductors, LCDs, PDPs, all equipment that uses injection valves, all equipment that uses gas valves, and all equipment that performs CVD / PVD processes. have.

1 is a schematic diagram showing a typical CVD apparatus

2 is a cross-sectional perspective view showing an injection valve of a typical CVD apparatus

3A, 3B, and 3C are cross-sectional views illustrating the flow of gas in an injection valve of a general CVD apparatus.

Figure 4 is a schematic diagram showing a thin film deposition apparatus according to an embodiment of the present invention

5 is a perspective view showing a heating unit of a thin film deposition apparatus according to an embodiment of the present invention

6 is a cross-sectional view showing a heating unit of a thin film deposition apparatus according to an embodiment of the present invention.

7 is a cross-sectional view showing the flow of gas in the heating unit of the thin film deposition apparatus according to an embodiment of the present invention

Figure 8 is a schematic diagram showing the temperature control relationship in the heating unit of the thin film deposition apparatus according to an embodiment of the present invention

<Description of the symbols for the main parts of the drawings>

10 chamber 11: shower head

12: heater stage 13a, 13b: injection valve

14 inlet port 15 outlet port

16: valve body 17: electric diaphragm

18 coil 19 heating unit

20: inlet 21: outlet

22: unit body 23: gas passage

23a: vertical section 23b: horizontal section

24: heater 25: ceramic ball

26: controller 27: gas temperature detection sensor

28: heater temperature detection sensor 29: piping

30a, 30b: Sensor installation part

Claims (9)

A chamber 10 which provides a space for depositing a thin film on a substrate, Injection valves 13a and 13b installed on a pipe 29 for supplying gas into the chamber 10 to regulate the inflow of the supplied gas; And a heating unit 19 installed on the rear end pipe 29 of the injection valves 13a and 13b to increase the temperature of the gas supplied to the injection valves 13a and 13b. Thin film deposition apparatus. 2. The heating unit (19) according to claim 1, wherein the heating unit (19) has a unit body (22) having an inlet (20) and an outlet (21), and is formed inside the unit body (22) and from the inlet (20) to the outlet (21). And a gas passage (23) having a gas flow path leading to the gas passage (23) and a heater (24) installed in the gas passage (23) to heat the gas while being exposed to the gas flow. The method of claim 2, wherein the gas passage 23 of the heating unit 19 is a thin film, characterized in that consisting of a zig-zag-shaped passage in which the direction is changed while bending the path several times in the section between the inlet 20 and outlet 21 Vapor deposition apparatus. The thin film deposition apparatus according to claim 2, wherein the gas passages (23) of the heating unit (19) are filled with a plurality of ceramic balls (25). 5. The thin film deposition apparatus according to claim 4, wherein the ceramic balls (25) are filled tightly over the entire inner wall space of the gas passage (23). The thin film deposition apparatus according to claim 2, wherein the heaters (24) are arranged in parallel along the center axis of the gas passage (23) as the heaters in the form of cartridges. The gas body detecting sensor 27 and the heater temperature detecting device of claim 2, wherein the unit body 22 of the heating unit 19 provides temperature information to the controller 26 for controlling the operation of the heater 24. Thin film deposition apparatus characterized in that the sensor 28 is provided, it is possible to control the temperature of the gas supplied according to the temperature set in the controller. The thin film deposition apparatus according to claim 1, wherein the heating unit (19) is installed in a pipe to which a carrier gas or a deposition gas or a backside gas is supplied. The thin film deposition apparatus according to claim 1, wherein the heating unit (19) is installed in a pipe of a vacuum facility used in a semiconductor manufacturing facility or a liquid crystal manufacturing facility.

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