KR20110027543A - Active phase correction method using the negative index meta materials, exposure imaging device and system using the same and method to improve resolution of exposure imaging device using the negative index meta materials - Google Patents

Active phase correction method using the negative index meta materials, exposure imaging device and system using the same and method to improve resolution of exposure imaging device using the negative index meta materials Download PDF

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KR20110027543A
KR20110027543A KR1020100054817A KR20100054817A KR20110027543A KR 20110027543 A KR20110027543 A KR 20110027543A KR 1020100054817 A KR1020100054817 A KR 1020100054817A KR 20100054817 A KR20100054817 A KR 20100054817A KR 20110027543 A KR20110027543 A KR 20110027543A
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refractive index
negative refractive
layer
dielectric
exposure imaging
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KR1020100054817A
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Korean (ko)
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김경식
박해성
이광칠
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연세대학교 산학협력단
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers

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  • Engineering & Computer Science (AREA)
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Abstract

PURPOSE: An active phase correction method using a negative refractive index meta material, exposure imagine device and system using the same, and a method for improving the resolution of the exposure imaging device are provided to correct an image spreading phenomenon due to electromagnetic wave. CONSTITUTION: An optical transparent material layer does not absorb electromagnetic wave in an incident wavelength band. A photo-mask layer is composed of an optical opaque material and patterns containing information related to an exposure target and a circuit array. A first positive refractive index material layer separates the photo mask layer and a negative refractive index meta-material layer. A second positive refractive index material layer separates the negative refractive index meta-material layer and a recording layer. A lens stack layer is composed of the positive refractive index material layers and negative refractive index meta-material layer. The recording layer is composed of a photo-sensitive material.

Description

ACTIVE PHASE CORRECTION METHOD USING THE NEGATIVE INDEX META MATERIALS, EXPOSURE IMAGING DEVICE AND SYSTEM USING THE SAME AND METHOD TO IMPROVE RESOLUTION OF EXPOSURE IMAGING DEVICE USING THE NEGATIVE INDEX META MATERIALS}

The present invention relates to an active phase correction method using a negative refractive index metamaterial, an exposure imaging apparatus and system using the same, and a method for improving the resolution of an exposure imaging apparatus using a negative refractive index metamaterial. More specifically, the present invention provides a light source unit, a light source control unit for adjusting the wavelength of the electromagnetic wave irradiated from the light source unit, a pattern unit containing the information of the object or circuit arrangement to be exposed, a negative refractive index metamaterial layer having a negative refractive index and the An exposure imaging system comprising: a lens unit positioned on both sides of a negative refractive index meta-material layer and comprising a positive refractive index material layer, and a recording unit for recording electromagnetic wave information passing through the lens unit, wherein the light source unit irradiates the light source unit; An active phase correction method comprising the step of adjusting the wavelength range of the negative refractive index metamaterial and the absolute real part of the positive refractive index material to be inconsistent, and configuring the negative refractive index metamaterial as a metal-dielectric composite material. Image spreading without adjusting the wavelength band irradiated from the light source unit The resolution of the exposure an imaging apparatus that can effectively reduce the phase is for the improved process.

Optical imaging technology, which is attracting attention as the next generation technology, has been an obstacle to the development of high resolution imaging technology because its accuracy, processing precision and productivity are superior to any other methods, but the resolution cannot be shorter than the wavelength due to diffraction limits.

In order to overcome such diffraction limits, researches are actively conducted in various fields all over the world, and in particular, near-field optical phenomena generated by plasmonic resonance or phonon resonance are conventional light optics. It has a characteristic that is not seen at, and has a high potential of realizing high resolution.

Meanwhile, as one of methods for overcoming the resolution limitation due to diffraction limit, as shown in FIG. 2, a negative refractive index metamaterial having a negative dielectric constant or negative permeability is proposed by JB Pendry in 2000. (JB Pendry, Phys. Rev. Lett. 85, 3966 (2000)), a high resolution above the diffraction limit can be obtained by introducing the negative refractive index metamaterial into the near-field optical imaging system, as shown in FIG. (N. Fang et al., Science 308, 534-537 (2005)).

The difference between the refractive index metamaterial and other technologies that overcome the diffraction limit is that the surface plasmon resonance or the phonon resonance is generated in the electromagnetic wave band of a specific wavelength, so that the exponential function depends on the traveling distance of the electromagnetic wave. By reconstructing the evanescent wave, which normally disappears, high resolution beyond the diffraction limit is possible, and since it is a slab structure capable of large-area imaging and requiring no geometrical deformation or processing, FIGS. 4A and 4B. As can be seen, it is highly compatible with conventional optical lithography and optical imaging techniques (RJ Blaikie et al, J. Opt. A. 7 S176 (2005)).

On the other hand, the negative refractive index metamaterial has a conventional index matching method despite the above-mentioned advantages (index matching method; a method of matching the real part size of the refractive index or the dielectric constant of the refractive index metamaterial and the surroundings of the positive refractive index material) In this case, image blurring due to the absorption of electromagnetic waves of a medium inevitably occurs, which causes a decrease in the transmittance of electromagnetic waves and a phase change of spatial frequency components, thereby drastically reducing imaging resolution and resolution. Let's do it.

In general, the optical transfer function (OTF) is used to measure the image quality of an optical system, and the optical transfer function OTF is expressed as MTF (k x ) exp [-iPTF (k x )]. Here, the Modulation Transfer Function (MTF) is a value representing the magnitude of | OTF | and the Phase Transfer Function (PTF) is a phase of the OTF.

When the value of the optical transfer function (OTF) is 1 at a spatial frequency (k x ) in a wide range (Δk x ), the Near Field Super Lens (NFSL) obtains information of an object plane from an image plane. It is a perfect lens that perfectly reconstructs the (image plane) and has a resolution of about 1 / (Δk x ). Therefore, the research trends up to now have been made to improve the modulation transfer function (MTF) to obtain the perfect lens condition in the index match situation. However, electromagnetic wave absorption of materials inevitably occurs in constructing an image system using a negative refractive index metamaterial, which causes an image spread phenomenon, which makes it impossible to completely restore the phase information of the object plane to the image plane. The phase control of the function is also a significant factor in the image quality.

In order to prevent such deterioration of the image performance, an optical system generally uses a phase retrieval method (adaptive optics), but it includes a measurement unit that collects the distorted wavefront information of the image and restores the distorted information. As a feedback device is required to deliver adaptive control optics, the complexity of the optical system and the increase in system size are inevitable. In particular, in near-field imaging systems, it is very difficult to obtain wavefront information of distorted images. Could not be used.

Accordingly, the present inventors can not only enable the resolution beyond the diffraction limit by restoring the near field, but also have a refractive index metamaterial imaging apparatus and system that is easy to implant technology into existing semiconductor processes and equipment without complex molding openings and periodic structures. In this regard, the present inventors have developed an active phase correction method and an optical imaging apparatus and system using the same, which can minimize image performance degradation due to electromagnetic wave absorption of a medium without introducing a complicated optical system configuration or system for phase recovery.

It is an object of the present invention to provide a high resolution exposure imaging apparatus and system that is capable of nano resolution by restoring near-field to convey spatial information beyond the diffraction limit on the object plane to the image plane and ultimately suitable for nano and bio imaging. will be.

In addition, an object of the present invention is to provide an optical imaging apparatus and system that is easy to implant technology into existing semiconductor processes and equipment using only planar metal or dielectric thin film without complicated molding opening and periodic structure, and excellent scalability to integration and large area imaging. To provide.

In addition, an object of the present invention is to apply the index mismatched negative refractive index metamaterial to the micro-optical system that is difficult to measure the wavefront information and can not install a separate feedback device, thereby spreading the image by absorbing electromagnetic waves without a separate manual correction device It is to provide an active phase correction method for correcting a phenomenon and actively correcting a distorted image.

In order to achieve the above object, the present invention provides a layer of a light transparent material that does not absorb electromagnetic waves in the incident wavelength band: composed of a light opaque material that does not transmit incident light having a predetermined wavelength, and includes information on an object or circuit arrangement to be exposed. A photomask layer having a pattern formed thereon: a first positive refractive index material layer having a positive refractive index and spaced apart from the photomask layer and the negative refractive index metamaterial layer; A negative refractive index lens layer having a negative refractive index and inconsistent absolute values of the dielectric constant part with the first positive refractive index material layer; A lens stack layer having a positive refractive index and having a second positive refractive index material layer spaced apart from the negative refractive index metamaterial layer and the recording layer; and a photosensitive material for recording electromagnetic wave information transmitted through the material layers An exposure imaging apparatus including a recording layer made of the same is provided.

On the other hand, in order to achieve the above object, the present invention is a light source unit for irradiating electromagnetic waves having a predetermined wavelength; A light source controller configured to adjust the wavelength of the electromagnetic wave irradiated from the light source unit so that the absolute value of the dielectric constant part of the birefringent material layer and the negative refractive index metamaterial layer constituting the lens unit is inconsistent; A pattern unit, which is made of an optically opaque material through which electromagnetic waves incident from the light source unit cannot pass, and contains information of an object to be exposed or a circuit arrangement; Comprising a negative refractive index metamaterial layer having a negative refractive index and a positive refractive index material layer having a positive refractive index located on both sides of the negative refractive index metamaterial layer, the dielectric constant real portion of the positive refractive index material layer and negative refractive index metamaterial layer A lens unit having an absolute value mismatch; And a recording unit made of a photosensitive material for recording the electromagnetic wave information transmitted through the super lens unit.

On the other hand, in order to achieve the above object, the present invention provides a light source unit, a light source control unit for adjusting the wavelength of the electromagnetic wave irradiated from the light source unit, a pattern unit containing the information of the object or circuit arrangement to be exposed, the sound having a negative refractive index An optical imaging system including a lens unit including a refractive index metamaterial layer and a positive refractive index material layer positioned on both sides of the negative refractive index metamaterial layer and having a positive refractive index, and a recording unit for recording electromagnetic wave information transmitted through the lens unit. The method of claim 1, further comprising adjusting the wavelength band irradiated by the light source unit such that the absolute value of the dielectric constant part of the negative refractive index metamaterial and the positive refractive index material does not match.

Here, the lens stack layer or the lens unit may be formed in plural at regular intervals, and the birefringence material layer may be formed of a dielectric substance.

In addition, the negative refractive index meta-material layer may be formed of any metal thin film having a negative refractive index, such as silver (Ag) or gold (Au) thin film, wherein the positive refractive index material layer is a free space made of air , Poly (methyl methacrylate) or PMC.

In addition, the real part (ε ') of the negative refractive index metamaterial layer is

Figure pat00001
To
Figure pat00002
It may have a range of. Here, the value of ε " M is the imaginary imaginary part of the negative refractive index metamaterial (ie, ε M = ε ' M + i · ε" M ), and means the intrinsic loss of electromagnetic waves caused by the medium, and ε " A value of 1 is the dielectric imaginary part of the birefringent material (ie ε 1 = ε ′ 1 + i · ε ″ 1 ).

In addition, the negative refractive index metamaterial layer may be formed of any dielectric thin film having a negative refractive index, such as a SiC dielectric, a TiO 2 dielectric or a carbon nanotube (CNT) thin film, wherein the positive refractive index material layer is It may be made of free space or SiO 2 .

In addition, the real part (ε ') of the negative refractive index metamaterial layer is To

Figure pat00004
It may have a range of. Here, the value of ε " M is the imaginary imaginary part of the negative refractive index metamaterial (ie, ε M = ε ' M + i · ε" M ), and means the intrinsic loss of electromagnetic waves caused by the medium, and ε " A value of 1 is the dielectric imaginary part of the birefringent material (ie ε 1 = ε ′ 1 + i · ε ″ 1 ).

In addition, the present invention, in manufacturing the negative refractive index metamaterial layer of the exposure imaging apparatus having the above configuration, composed of a metal-dielectric composite material, not a metal or dielectric pure material, and spreads the image on a light source having a constant wavelength Another technical gist of the present invention is a method for improving the resolution of an exposure imaging apparatus using a negative refractive index metamaterial characterized by adopting a metal-dielectric composite material having a relatively low degree of image blurring.

In addition, the present invention, when manufacturing the negative refractive index metamaterial layer of the exposure imaging system having the above configuration, consisting of a metal-dielectric composite material, not a metal or dielectric pure material, at a fixed wavelength without replacement of the light source Another technical gist of the present invention is a method for improving the resolution of an exposure imaging apparatus using a negative refractive index metamaterial characterized by adopting a metal-dielectric composite material having a relatively low degree of image blurring.

The present invention provides an index mismatching condition to a negative refractive index meta-material and a surrounding-refractive index material with varying incidence wavelength so as to correspond to a phase of a phase transfer function (optical transfer function). By controlling the, it is possible to correct the image spreading phenomenon caused by the absorption of electromagnetic waves, thereby eliminating the degradation of the image performance, which is a disadvantage of the refractive index metamaterial imaging system.

As described above, by applying index mismatched negative refractive index metamaterials to an ultra-compact optical system that is difficult to measure wavefront information and cannot install a separate feedback device, the image spreading phenomenon due to electromagnetic wave absorption is corrected without a separate manual correction device. And actively correct the distorted image.

In addition, this enables high resolution by restoring the near field and transmitting spatial information beyond the diffraction limit on the object plane to the image plane, ultimately enabling high resolution exposure imaging devices and systems suitable for nano and bio imaging. In addition, optical imaging devices and systems that can be easily implanted into existing semiconductor processes and equipment and that are highly scalable to integration and large-area imaging can be implemented using only planar metal or dielectric thin films without complicated molding openings and periodic structures.

In constructing the negative refractive index metamaterial, the dielectric constant is artificially designed and controlled by applying a metal-dielectric composite material that is not a metal or a dielectric pure material, so that an index mismatch condition with a positive refractive index material can be avoided without changing the incident wavelength. By controlling the phase transfer function, it is possible to reliably correct the image spreading phenomenon caused by the absorption of electromagnetic waves.

Accordingly, in applying the active phase correction technology of the exposure imaging apparatus to the existing imaging apparatus, it is possible to remove the image spread phenomenon and increase the clarity by a simple operation of replacing the refractive index metamaterial, so that the light source must be replaced. With no economic burden, it has high compatibility with existing exposure imaging apparatus.

1 is a conceptual diagram briefly showing the principle of a phase correction technique using a negative refractive index metamaterial and the structure of an imaging system.
2 is a conceptual diagram briefly illustrating an imaging principle using a negative refractive index metamaterial.
3 is a cross-sectional view illustrating a principle of operation of a near field super lens using a silver thin film, which is a negative refractive index metamaterial.
4A and 4B are cross-sectional views of a conventional lithographic apparatus and a cross-sectional view of a device in which a silver thin film, which is a layer of negative refractive index metamaterial, is added to a conventional lithographic apparatus.
5A and 5B are graphs showing the object and image energy intensities of the silver thin film near field lens.
6A through 6E are graphs showing MTF and PTF changes according to k x / k o of the silver thin film superfield super lens when the epsilon ”values are 0.001, 0.4, and 0.6, respectively.
FIG. 7 is a graph showing the correlation between ε ”and ε ′ and the relationship between ε ′ and the incident wavelength for each k x / k o range.
8A to 8D show a) image clarity when a thin film superlens imaging system is given an index matching condition for various pp spacings and slit widths, and b) image clarity when ε 'of the silver thin film is index mismatched to -0.92. c) image clarity when the index mismatch condition is optimized, and d) ε 'value of the silver thin film satisfying the image clarity when the index mismatch condition is optimized.
9A to 9C illustrate a) change in vividness according to the pp spacing and b) change in energy intensity according to the distance when the pp spacing is 87 nm in optical imaging using a silver thin film near field superlens (ε ″ = 0.4). , And c) a graph showing a change in energy intensity with distance when the pp interval is 110 nm.
10a to 10d are a) a graph showing the dielectric constant dispersion of SiC, a dielectric having a negative dielectric constant, and SiO 2 , a positive refractive index material surrounding it, and b) index matching to SiC superlens imaging systems for various pp spacings and slit widths. It is a graph showing the image clarity when the method is applied, c) the image clarity indicated by optimizing the index mismatch condition, and d) the incident wavelength λ value satisfying the image clarity indicated by optimizing the index mismatch condition.
11A-11E show a) image clarity when a) incident light is fixed at 10.5 μm in a SiC superlens imaging system, b) MTF of the SiC superlens imaging system for k x / k o and incident wavelength, c) MTF for k x / k o in the index matching condition (incidence wavelength: 11 μm) and the index mismatch condition (incident wavelength: 10.5 μm), d) change in visibility with pp spacing when the slit width is 360 nm, and e) In optical imaging using a SiC dielectric thin film near field superlens, it is a graph showing the lateral transfer intensity distribution passing through a pp slit of 0.93 μm with a double slit having a 360 nm slit width.
12A and 12B show pp spacings (minimum decomposition intervals) and peak intensity of electromagnetic waves according to acquisition clarity when the slit width is 360 nm under the index matching condition (incident wavelength: 11 μm) and the index mismatch condition (incident wavelength: 10.5 μm). peak intensity).
FIG. 13 is a graph illustrating a change in permittivity of a composite material according to a mixing ratio of a metal-dielectric composite material.

An active phase correction method using a negative refractive index metamaterial and an exposure imaging apparatus and system using the same according to the present invention will be described in detail with reference to the following drawings.

Exposure imaging apparatus according to the present invention is a light-transparent material layer that does not absorb electromagnetic waves in the incident wavelength band: composed of a light-opaque material that does not transmit incident light having a certain wavelength, the pattern containing the information of the object or circuit arrangement to be exposed The formed photomask layer: a first positive refractive index material layer having a positive refractive index and spaced apart from the photomask layer and the negative refractive index metamaterial layer; A negative refractive index lens layer having a negative refractive index and inconsistent absolute values of the dielectric constant part with the first positive refractive index material layer; A lens stack layer having a positive refractive index and having a second positive refractive index material layer spaced apart from the negative refractive index metamaterial layer and the recording layer; and a photosensitive material for recording electromagnetic wave information transmitted through the material layers And a recording layer consisting of: a.

In addition, the exposure imaging system according to the present invention includes a light source unit for irradiating electromagnetic waves having a predetermined wavelength; A light source controller configured to adjust the wavelength of the electromagnetic wave irradiated from the light source unit so that the absolute value of the dielectric constant part of the birefringent material layer and the negative refractive index metamaterial layer constituting the lens unit is inconsistent; A pattern unit, which is made of an optically opaque material through which electromagnetic waves incident from the light source unit cannot pass, and contains information of an object to be exposed or a circuit arrangement; Comprising a negative refractive index metamaterial layer having a negative refractive index and a positive refractive index material layer having a positive refractive index located on both sides of the negative refractive index metamaterial layer, the dielectric constant real portion of the positive refractive index material layer and negative refractive index metamaterial layer A lens unit having an absolute value mismatch; And a recording unit made of a photosensitive material for recording electromagnetic wave information transmitted through the super lens unit.

The phase correction method of the exposure imaging system using the exposure imaging apparatus may include adjusting the wavelength band irradiated from the light source unit such that the absolute value of the dielectric constant part of the negative refractive index metamaterial and the positive refractive index material does not match. Include.

In the conventional exposure imaging apparatus (FIG. 4A) used in general, optical imaging is performed by the incident light passing through the photomask layer directly onto a recording layer made of a photosensitive material, and thus, the resolution of λ / 2 or less of the incident wavelength ( It was difficult to have a resolution. However, by inserting a lens layer using a negative refractive index metamaterial into an existing exposure imaging apparatus (FIG. 5), resolutions up to λ / 5 of the incident wavelength for silver thin film superlenses and λ / 14.2 for SiC dielectric superlenses ( can improve the resolution.

The negative refractive index metamaterial (FIGS. 1 and 2) inserted into the exposure imaging apparatus is a material having a negative dielectric constant or negative permeability, and has been in the spotlight as an alternative for overcoming the resolution limitation due to the diffraction limit. That is, by introducing the negative refractive index metamaterial into the optical imaging system using the near field (FIG. 3), the negative refractive index metamaterial is used to produce Surface Plasmon Resonance or Phonon Resonance in the electromagnetic wave band of a specific wavelength. By reconstructing the evanescent wave which exponentially disappears according to the traveling distance of the electromagnetic wave, high resolution above the diffraction limit can be obtained.

In addition, the negative refractive index metamaterial is a slab structure capable of large-area imaging and does not require geometric deformation or processing, and can be easily applied to conventional photolithography and optical imaging techniques as shown in FIGS. 4A and 4B.

On the other hand, even though the negative refractive index metamaterial has the above-described resolution improving effect, when incident light passes through the medium having the negative refractive index, image blurring occurs due to the absorption of electromagnetic waves of the medium, which is caused by electromagnetic waves. The transmittance decreases and the phase change of the spatial frequency components causes the imaging resolution to be significantly reduced.

In order to prevent such deterioration of the image performance, an optical system generally uses a phase retrieval method (adaptive optics), but it includes a measurement unit that collects the distorted wavefront information of the image and restores the distorted information. Therefore, the need for a feedback device to be delivered to adaptive optics device, the complexity of the optical system configuration and increased system size was inevitable.

On the other hand, the conventional optical system using the negative refractive index metamaterial has an index matching method, that is, a method of matching the absolute value of the real part absolute value of the refractive index or dielectric constant of the negative refractive index metamaterial and its surroundings It was common to use, but there was a problem in overcoming image blurring due to electromagnetic wave absorption.

In contrast, the imaging apparatus of the present invention imparts an index mismatching condition to the negative refractive index metamaterial and the surrounding refractive index material to surround the phase of the phase transfer function (Optical Transfer Function). By controlling the image spread phenomenon by the electromagnetic wave absorption by controlling the corresponding, it is possible to solve the degradation of the image performance, which is a disadvantage of the refractive index metamaterial imaging system.

In this case, the lens stack layer or the lens unit including the negative refractive index metamaterial given the index mismatch condition may be applied as a single layer or may be formed in a multi-layer at regular intervals. have.

In addition, the negative refractive index metamaterial layer may be any material having a negative dielectric constant or negative permeability, preferably, a negative refractive index such as silver (Ag) or gold (Au) thin film in the UV incident wavelength region Any dielectric thin film having a negative refractive index, such as a metal thin film having a thin film, a SiC dielectric, a TiO 2 dielectric, or a carbon nanotube (CNT) thin film in the mid-IR incident wavelength region, may be used. .

On the other hand, the birefringent material layer can be used for all commercially available dielectric materials, and when using a negative refractive index meta-material metal thin film such as silver (Ag) or gold (Au) thin film, the free space ( Free space), PMMA (Poly (methyl methacrylate)) or SiC can be used as a birefringent material, and a negative refractive index meta-material such as SiC dielectric, TiO 2 dielectric or carbon nanotube (CNT) thin film is used. In this case, a free space made of air or SiO 2 may be used as the birefringence material.

In addition, the dielectric constant part ε ' M of the negative refractive index meta-material layer is induced through a series of processes described below to prevent image spreading and degradation of image performance due to electromagnetic wave absorption, and the incident wavelength is short. In the wavelength range (UV, visible, near-infrared)

Figure pat00005
To
Figure pat00006
It is preferable to have a range of. In the wavelength region (mid-infrared, THz region) with a long incident wavelength,
Figure pat00007
To
Figure pat00008
It is preferable to have a range of. Here, the value of ε " M is the imaginary imaginary part of the negative refractive index metamaterial (ie, ε M = ε ' M + i · ε" M ), and means the intrinsic loss of electromagnetic waves caused by the medium, and ε " A value of 1 is the dielectric imaginary part of the birefringent material (ie ε 1 = ε ′ 1 + i · ε ″ 1 ).

Hereinafter, a brief description will be made of a process of deriving a real dielectric constant (ε ′ M ) of the negative refractive index metamaterial layer to which the index mismatching condition is applied.

In the most typical near field superlens imaging system structure as shown in Fig. 1, when the light in the transverse magnetic (TM) mode is projected, the optical transfer function (OTF) of the lens stack composed of a negative refractive index metamaterial and a positive refractive index material surrounding both sides ) Is expressed as

Figure pat00009

The optical transfer function (OTF) is expressed as an MTF corresponding to an amplitude or magnitude of an OTF as a function of spatial frequency and a PTF corresponding to a phase.

Meanwhile, the optical transfer function (OTF) of the lens stack may be expressed by multiplying the transmittance of the negative refractive index metamaterial expressed by the Fresnel equation representing the transmission and reflectance of the multilayer thin film and the electromagnetic wave transfer formula in the birefringent material. Where k x is the transverse wavelength vector and k z (i) refers to the wave number in the z direction at i medium. When i is 1, 2, and M as shown in FIG. 1, k z (i) is as follows.

Figure pat00010

Also r ij And t ij (= 1 + r ij ) represents Fresnel reflection coefficient and transmission coefficient from the i-th material to the j-th material, respectively, wherein the optical transfer function (OTF) from the object to the image is given by the following equation.

Figure pat00011

Here, the dielectric constant of the birefringent material is ε 1 = ε 2 = ε ' 1 + i · ε " 1 , the permeability is μ 1 = μ 2 = 1, and the size of the imaging system is much smaller than the incident wavelength,

Figure pat00012
Applying a high spatial frequency limit
Figure pat00013
to be. At this time, r 1M and r M2 can be represented by the following formula.

Figure pat00014

The permittivity of the negative refractive index metamaterial is given by ε M = ε ' M + i · ε " M , and the permittivity of the birefringent material is given by ε 1 = ε' 1 + i · ε" 1 , d M = d 1 + d 2 Therefore, at a high spatial frequency (k x / k o >> 1) limit, the optical transfer function is given by the following equation.

Figure pat00015

Where r 1M 2 Is represented as follows.

Figure pat00016

OTF is random

Figure pat00017
To be real, ie to be a zero PTF, r 1M 2 Since this must be a mistake, the answer is given by

Figure pat00018

In the refractive index metamaterial imaging system, the dielectric constant conditions of the refractive index metamaterial and the birefringence material,

Figure pat00019
Applying an expression, the first answer is
Figure pat00020
Will be displayed. This means that the phase of the imaging system is always recovered (zero PTF) in the absence of absorption of both the refractive index metamaterial and the birefringent material, so that the maximum MTF condition is an important factor in measuring the performance of the imaging system. Will have the maximum MTF. this is
Figure pat00021
when,
Figure pat00022
The imaging system works with a perfect lens with zero PTF and maximum MTF.

On the other hand, the definition of the optical impedance of the i material

Figure pat00023
), The second solution can be expressed as

Figure pat00024

This impedance matching condition is applied when the intrinsic absorption of electromagnetic waves of negative index metamaterial

Figure pat00025
) Is extended to the index mismatch condition, that is, the phase correction condition. As such, in the presence of electromagnetic intrinsic absorption in the imaging system, the phase correction condition (zero PTF) is an important factor in the superlens image resolution because the MTF does not always have a maximum value in the index matching condition. The impedance matching condition, that is, the index mismatching condition may be expressed as the following equation when expressed by the equation for the real part ε ' M of the refractive index metamaterial dielectric constant.

Figure pat00026

That is, the real part of the dielectric constant of the negative refractive index metamaterial, as in the above formula,

Figure pat00027
Preferably, in the wavelength range of short incident wavelengths (UV, visible, near infrared)
Figure pat00028
To In the wavelength range (mid-infrared, THz region) with a range of
Figure pat00030
To
Figure pat00031
By inconsistent with the real part of the dielectric constant of the birefringent material to have a range of, the phase transfer function (corresponding to the phase of the optical transfer function) can be controlled to prevent image spreading due to electromagnetic wave absorption. have.

The index mismatch condition of the above equation improves the resolution and sharpness of the image in the thin film superlens imaging system operating in the UV incident wavelength region and in the SiC dielectric thin film superlens imaging system operating in the mid-IR region. You can check it.

6A, 6C, and 6E show the thin film near-fields when the values of ε " are 0.001, 0.4, and 0.6, respectively, in the case of index matching and mismatching (ε '=-0.7, -0.8, -0.9, -1.0, -1.1). is a graph showing the MTF changes in k x / k o super lens, Fig. 6b, 6d, 6e has the index matched, in disagreement case, ε "values are respectively 0.001, 0.4, 0.6 foil layer near-field Super when the This graph shows the change in PTF according to k x / k o of the lens.

6A and 6B, when the absorption loss of the superlens is negligible (ε " = 0.001), the MTF has a value close to 1 at high spatial frequency under the index matching condition, and the PTF is 0 at almost all ε '. With near values, the phase is recovered most of the time, so that the best image quality appears at the index match condition, which indicates the highest data rate.

On the other hand, if the loss due to electromagnetic wave absorption of the silver film is not negligible (ε "= 0.4, 0.6) as shown in FIGS. 6C, 6D, 6E, and 6F, the MTF is reduced to a similar size in case of index matching and index mismatch. As a result, the phase (PTF) adjustment of the OTF becomes a decisive factor in image reconstruction.

As can be seen in Figures 6d and 6f, in the case where ε "value is 0.4, PTF tends to converge to" 0 "when ε 'is -0.92, and in the case where ε" value is 0.6, PTF is ε' Is a trend of convergence to "0" when -0.80, which is the result as expected from the above equations.

In other words, in the case of the silver thin film having a loss due to the absorption of electromagnetic waves of the medium, the OTF phase can be adjusted under an index mismatch condition. It will play a big role.

FIG. 7 is a graph showing the correlation between ε "and ε 'and the relationship between ε' and the incident wavelength for each k x / k o range, where the broken line is 6 <k x / k o <8 and the dotted line is 12 Correlation at <k x / k o <13, with solid line at k x / k o → ∞, which satisfies zero PTF conditions at high spatial frequencies as derived above.

Figure pat00032
(Birefringence material: free space) is part of the curve.

The epsilon'adjustment of the silver thin film superfield superlens for mismatching the index can be realized by adjusting the wavelength of incident light, as represented by the dashed-dashed line in FIG. In the embodiment shown in Figure 7, it can be implemented as a light source that can be adjusted from 330nm to 341nm using a UV lamp as a spectrometer.

In order to compare the imaging ability in the coincidence and inconsistency conditions formed by the silver thin film having the ε " 0.4, the lateral transmission intensity distribution through the double-slits of the nanoscales arranged on the x-axis as shown in ) And its visibility (V) were calculated.

The field distribution in the image plane E img (x) is obtained by the inverse Fourier transform of E obj (k x ) as in the following equation.

Figure pat00033

8A and 8B show image sharpness and ε 'of silver thin film index mismatch with -0.92 when the silver thin film superlens imaging system is given an index matching condition for various pp spacings (see FIG. 1) and slit widths. It is a graph showing the sharpness. In this case, it can be seen that the sharpness of FIG. 8B is significantly improved than the sharpness of FIG. 8A. In particular, it can be seen that the image sharpness can be excellently obtained even when the p-p interval and the slit width become smaller.

8C and 8D are graphs showing image sharpness and ε 'values of silver thin films corresponding to index mismatch conditions optimized for various p-p intervals and slit widths. When the wavelength control of ε 'of the silver thin film is performed as shown in FIG. 8D, maximum image clarity is possible for each pp spacing and slit width as shown in FIG. 8C, which is more than that of FIG. 8B (ε ′ = − 0.92). It shows improved sharpness.

9A, 9B, and 9C, the sharpness and lateral transfer intensity distributions represented by the p-p spacing and the slit width parameters in the index mismatch, index mismatch, and index mismatch cases optimized by Equation 7 are shown.

9A shows the sharpness according to the p-p interval when the slit width is 20 nm, and when the index mismatch condition of the present invention is given, it can be seen that the sharpness of 1.0 is obtained at the 124 nm p-p interval. It can also be seen that the analytical p-p spacing at V = 0.5 decreases from 106 nm when ε 'is -1.0 to 95 nm when ε' is -0.82.

9B and 9C show the lateral transfer intensity distributions passing through the double slit having a 20 nm slit width and the pp spacing of 87 nm and 110 nm, respectively. While there is a wide range of overlapping bumps, in the index mismatch case represented by the blue line (ε '= -0.79), the peaks are well separated to improve resolution as well as to suppress bumps. You can see that it is completely removed. In other words, it can be seen that the phase adjustment approach provides improved image performance.

The results can also be found in SiC dielectric superlens imaging systems operating in the mid-IR region.

FIG. 10A is a graph illustrating dielectric constant dispersion of SiC, which is a dielectric having a negative dielectric constant, and SiO 2 , a positive refractive index material surrounding the dielectric material, wherein the dielectric constant of SiO 2 is air and a positive refractive index material of a silver thin film superlens imaging system. In other words, it can be seen that the material has an electromagnetic wave absorptance (ε " 1 ≠ 0) rather than" 0 ".

The SiC dielectric thin film superlens imaging system also used Equation 8 to calculate the lateral transmission intensity distribution and its visibility (V) through the double slit listed on the x-axis.

FIG. 10B is a graph showing image clarity when the index matching method (incident wavelength λ = 11 μm) is applied to the SiC superlens imaging system for various p-p intervals and slit widths. In this case, the image sharpness is about 0.5, so that the image sharpness is locally localized in a relatively wide p-p interval and slit width region.

10C and 10D are graphs showing image sharpness and an incident wavelength lambda value corresponding to index mismatch conditions optimized for p-p intervals and slit widths. When the incident wavelength corresponding to FIG. 10D is exposed to the SiC dielectric thin film imaging system, a sharply improved image clarity can be obtained as shown in FIG. 10C, and high sharpness can be achieved even at a very small pp spacing and slit width region compared to the incident wavelength. .

FIG. 11A is a graph showing image clarity when the incident wavelength is fixed at 10.5 μm to solve technical difficulties for implementing wavelength variability in an imaging system, and FIG. 11B is SiC for k x / k o and incident wavelength. A graph showing the MTF of a super lens imaging system. As shown in FIG. 11B, when the incident wavelength is around 10.5 μm, not only the phase correction effect of the OTF but also the MTF for k x / k o is improved, so that the image clarity is significantly improved compared to the index matching condition (incident wavelength: 11 μm). do.

11C is a graph showing MTF for k x / k o under an index matching condition (blue line; incident wavelength = 11 μm) and an index mismatching condition (red line; incident wavelength = 10.5 μm), wherein the index mismatch condition is high. It can be seen that we have an excellent MTF for k x / k o . This is because when there is no electromagnetic absorption of the refractive index metamaterial and the birefringence material surrounding it, MTF becomes the maximum because there is no electromagnetic reflection at the interface of the refractive index metamaterial when the index matching condition is added, but the absorption of the electromagnetic wave is negligible. In the above example, since the index matching condition is no longer the maximum MTF condition, the MTF is improved in the index mismatch condition.

FIG. 11D is a graph showing the change in visibility with pp spacing when the slit width is 360 nm, and the analytical pp spacing at V = 0.5 is 2.6 탆 under the index matching condition (blue line; incident wavelength = 11 탆) It can be seen that at (λ / 4.2), the index mismatch condition (red line; incident wavelength = 10.5 μm) decreases to 0.74 μm (λ / 14.2).

FIG. 11E shows a lateral transfer intensity distribution passing a pp slit of 0.93 μm and a double slit having a 360 nm slit width in optical imaging using a SiC dielectric thin film near-field superlens, and an index matching condition (blue line; incident wavelength). FIG. = 11 μm), the image of the double slit cannot be obtained, that is, the resolution cannot be obtained, but under the index mismatch condition (red line; incident wavelength = 10.5 μm), the image of the double slit can not only obtain high sharpness. In addition, it can be seen that the distribution of lateral transfer strength is also improved over the index matching condition.

12A and 12B show the pp spacing (minimum decomposition interval) according to the obtained clarity and the highest point of the electromagnetic wave when the slit width is 360 nm under the index matching condition (incident wavelength: 11 μm) and the index mismatch condition (incident wavelength: 10.5 μm). Each graph shows peak intensity.

As can be seen in FIG. 12A, the pp interval that can be analyzed at V = 0.5 is the index mismatch condition (red square box; incident wavelength = 10.5 μm) at λ / 4.2 when the index matching condition (black origin; incident wavelength = 11 μm). When it is improved to λ / 14.2, it can be seen that under an index mismatch condition, high definition of V = 0.6 or more can be obtained with a resolution of about λ / 12. In addition, when comparing the peak intensity of the electromagnetic waves transmitted through the double slit as shown in Figure 12b, the index matching condition (black origin) when the index mismatch condition (red square box; incident wavelength = 10.5㎛) at V = 0.5 It can be seen that the incident wavelength is improved by more than three times compared to the incident wavelength = 11㎛).

In order to implement such an index mismatch condition in a SiC dielectric thin film superlens imaging system, a wavelength variable CO 2 laser or an FTIR microscope may be used as a light source.

As described above, the present invention controls the phase transfer function by adjusting the incident wavelength to give an index mismatching condition to the negative refractive index metamaterial and the positive refractive index material surrounding the surroundings, thereby controlling the electromagnetic wave absorption. By correcting the image spreading phenomenon by this, it is possible to solve the degradation of the image performance, which is a disadvantage of the refractive index imaging system.

In addition, this enables high resolution by restoring the near field and transmitting spatial information beyond the diffraction limit on the object plane to the image plane, ultimately enabling high resolution exposure imaging devices and systems suitable for nano and bio imaging. In addition, optical imaging devices and systems that can be easily implanted into existing semiconductor processes and equipment and that are highly scalable to integration and large-area imaging can be implemented using only planar metal or dielectric thin films without complicated molding openings and periodic structures.

However, in applying an active phase correction method using the negative refractive index metamaterial having the above structure, the negative refractive index metamaterial layer is composed of a pure metal or dielectric material such as silver (Ag) or gold (Au) thin film. In this case, it is cumbersome to replace the light source of the existing exposure imaging apparatus for the implementation thereof, and may cause a decrease in compatibility with the existing exposure equipment.

In constructing the negative refractive index metamaterial layer, when the metal-dielectric composite material is applied, the dielectric constant of the pure material is different from that of the pure material by adjusting a composite ratio of two pure materials having different dielectric constant values. It is possible to implement a phase correction technique of an exposure imaging apparatus by imparting a dielectric constant of.

That is, the method for improving the resolution of an exposure imaging apparatus according to the present invention has a dielectric constant inherent to a pure material (hereinafter, referred to as a negative permittivity value) at a fixed wavelength through regular arrangement and irregular mixing of heterogeneous pure materials based on the effective medium theory. Pure materials are called active media) and a technique for designing the dispersion properties of a composite material having a value different from the refractive index.

Here, the composite material includes regular and irregular mixing and arrangement of heterogeneous pure materials such as metals, dielectrics, and semiconductors, and the regular and irregular mixing and mixing of two or more materials whose optical properties are changed through artificial processing of pure materials. Means the active medium produced through the arrangement.

Active media include negative refractive index metamaterials as well as natural materials with negative real dielectric constants that can cause surface plasmon resonance (SPR) and phonon resonance phenomena. Materials include even natural or artificially designed metamaterials with negative permittivity or negative permeability in the electromagnetic band of a particular wavelength.

Effective medium theory refers to pure material through regular or irregular arrangement and mixing of materials with different properties, such as metals, dielectrics and semiconductors, in all electromagnetic fields covering the UV, Optical, IR, THz and Microwave areas. It means an analysis method for a composite material having a dielectric constant and refractive index different from the dielectric constant and refractive index.

In constructing the negative refractive index metamaterial with a metal-dielectric composite material, as can be seen in the graph of FIG. 13, by applying various metal volume mixing ratios, a fixed wavelength (700 nm), that is, without replacing the light source, It is possible to design and vary the optimized permittivity epsilon.

While the phase correction technique by changing the wavelength of the light source of the exposure equipment changes the dielectric constant by using the dispersion property inherent in the lens layer according to the wavelength, the metal-dielectric composite material method based on the effective medium theory, By adjusting the dielectric constant of the lens layer based on the metal-dielectric composite material without changing the wavelength within the dielectric constant range of various pure materials mixed in a light source having a constant wavelength, it is possible to implement the exposure imaging apparatus to which the phase correction technology is applied.

That is, in implementing an exposure imaging system based on the negative refractive index metamaterial, the dielectric constant at a fixed wavelength is artificially designed and controlled by replacing the negative refractive index metamaterial which is composed of pure materials with a metal-dielectric composite material, The phase shift of spatial frequency components caused by the problem of image spreading due to electromagnetic wave absorption can be corrected and used to improve imaging resolution and contrast.

Therefore, according to the method for improving the resolution of an exposure imaging apparatus using a negative refractive index metamaterial according to the present invention, by artificially designing and controlling the dielectric constant of the negative refractive index metamaterial, the index mismatch condition is applied to the positive refractive index material without changing the incident wavelength. By controlling the phase transfer function by applying a, it is possible to reliably correct the image spreading phenomenon caused by the absorption of electromagnetic waves.

Accordingly, in applying the phase correction technology of the exposure imaging apparatus to the existing imaging apparatus, it is possible to eliminate the image spread phenomenon and increase the clarity by a simple operation of replacing the refractive index metamaterial, thereby making it necessary to replace the light source. Without burden, it has high compatibility with existing exposure imaging apparatus.

The present invention is not limited to the above specific embodiments and descriptions, and various modifications can be made by those skilled in the art without departing from the gist of the invention as claimed in the claims. Such variations are within the protection scope of the present invention.

Claims (29)

Layer of transparent material that does not absorb electromagnetic waves in the incident wavelength band:
A photomask layer composed of a light opaque material that does not transmit incident light having a predetermined wavelength, and includes a pattern containing information of an object or circuit arrangement to be exposed:
A first layer of positive refractive index material having a positive refractive index and spaced apart from the photomask layer and the layer of negative refractive index metamaterial; A negative refractive index lens layer having a negative refractive index and inconsistent absolute values of the dielectric constant part with the first positive refractive index material layer; A lens stack layer having a positive refractive index and comprising a second positive refractive index material layer spaced apart from the negative refractive index metamaterial layer and the recording layer; and
A recording layer made of a photosensitive material for recording electromagnetic wave information transmitted through the material layers:
Exposure imaging apparatus comprising a.
The exposure imaging apparatus of claim 1, wherein a plurality of lens stack layers are formed at regular intervals.
2. An exposure imaging apparatus according to claim 1, wherein said birefringent material layer is made of a dielectric substance.
The exposure imaging apparatus of claim 1, wherein the negative refractive index metamaterial layer is formed of a thin film of silver (Ag) or gold (Au).
The exposure imaging apparatus according to claim 3 or 4, wherein the birefringent material layer is free space made of air, poly (methyl methacrylate), or SiC.
The dielectric constant part ε 'of the negative refractive index metamaterial layer is
Figure pat00034
To
Figure pat00035
An exposure imaging apparatus having a range of.
Here, the value of ε " M is the imaginary imaginary part of the negative refractive index metamaterial (ie, ε M = ε ' M + i · ε" M ), and means the intrinsic loss of electromagnetic waves caused by the medium, and ε " A value of 1 is the dielectric imaginary part of the birefringent material (ie ε 1 = ε ′ 1 + i · ε ″ 1 ).
The exposure imaging apparatus of claim 1, wherein the negative refractive index metamaterial layer is formed of a SiC dielectric, a TiO 2 dielectric, or a carbon nanotube (CNT) thin film.
8. An exposure imaging apparatus according to claim 3 or 7 wherein the birefringent material layer is SiO 2 or free space made of air.
The dielectric constant part ε 'of the negative refractive index metamaterial layer is
Figure pat00036
To
Figure pat00037
An exposure imaging apparatus having a range of.
Here, the value of ε " M is the imaginary imaginary part of the negative refractive index metamaterial (ie, ε M = ε ' M + i · ε" M ), and means the intrinsic loss of electromagnetic waves caused by the medium, and ε " A value of 1 is the dielectric imaginary part of the birefringent material (ie ε 1 = ε ′ 1 + i · ε ″ 1 ).
A light source unit irradiating electromagnetic waves having a predetermined wavelength;
A light source controller configured to adjust the wavelength of the electromagnetic wave irradiated from the light source unit so that the absolute value of the dielectric constant part of the birefringent material layer and the negative refractive index metamaterial layer constituting the lens unit does not match;
A pattern unit, which is made of an optically opaque material through which electromagnetic waves incident from the light source unit cannot pass, and contains information of an object to be exposed or a circuit arrangement;
Comprising a negative refractive index metamaterial layer having a negative refractive index and a positive refractive index material layer having a positive refractive index located on both sides of the negative refractive index metamaterial layer, the dielectric constant real portion of the positive refractive index material layer and negative refractive index metamaterial layer A lens unit having an absolute value mismatch; And
A recording unit made of a photosensitive material for recording electromagnetic wave information transmitted through the super lens unit;
Exposure imaging system comprising a.
The exposure imaging system of claim 10, wherein a plurality of the lens units are formed at regular intervals.
11. An exposure imaging apparatus according to claim 10, wherein said birefringent material layer is made of a dielectric substance.
The exposure imaging system of claim 10, wherein the negative refractive index metamaterial layer is formed of a thin film of silver (Ag) or gold (Au).
14. An exposure imaging system according to claim 12 or 13, wherein the birefringent material layer is free space made of air, poly (methyl methacrylate), or SiC.
The dielectric constant part ε 'of the negative refractive index metamaterial layer is determined by the light source controller.
Figure pat00038
To
Figure pat00039
Exposure imaging system, characterized in that for adjusting the wavelength of the electromagnetic wave to have a range of.
Here, the value of ε " M is the imaginary imaginary part of the negative refractive index metamaterial (ie, ε M = ε ' M + i · ε" M ), and means the intrinsic loss of electromagnetic waves caused by the medium, and ε " A value of 1 is the dielectric imaginary part of the birefringent material (ie ε 1 = ε ′ 1 + i · ε ″ 1 ).
The exposure imaging system of claim 10, wherein the negative refractive index metamaterial layer is formed of a SiC dielectric, a TiO 2 dielectric, or a carbon nanotube (CNT) thin film.
17. An exposure imaging system according to claim 12 or 16, wherein the birefringent material layer is SiO 2 or free space made of air.
17. The method of claim 12 or 16, wherein the light source control unit, the dielectric constant real portion (ε ') of the negative refractive index meta-material layer
Figure pat00040
To
Figure pat00041
Exposure imaging system, characterized in that for adjusting the wavelength of the electromagnetic wave to have a range of.
Here, the value of ε " M is the imaginary imaginary part of the negative refractive index metamaterial (ie, ε M = ε ' M + i · ε" M ), and means the intrinsic loss of electromagnetic waves caused by the medium, and ε " A value of 1 is the dielectric imaginary part of the birefringent material (ie ε 1 = ε ′ 1 + i · ε ″ 1 ).
A light source unit, a light source control unit for adjusting the wavelength of the electromagnetic wave irradiated from the light source unit, a pattern unit containing the information of the object or the circuit array to be exposed, on both sides of the negative refractive index metamaterial layer having a negative refractive index and the negative refractive index metamaterial layer An exposure imaging system comprising: a lens portion comprising a birefringent material layer having a positive refractive index and a recording portion for recording electromagnetic wave information transmitted through the lens portion,
And adjusting the wavelength band irradiated by the light source unit such that the absolute value of the dielectric constant part of the negative refractive index metamaterial and the positive refractive index material does not match.
20. The active phase correction method of claim 19, wherein a plurality of the lens units are formed at regular intervals.
20. The method of claim 19, wherein said birefringent material layer is comprised of a dielectric substance.
20. The active phase correction method of claim 19, wherein the negative refractive index metamaterial layer is formed of a thin film of silver (Ag) or gold (Au).
23. The method of claim 21 or 22 wherein the birefringent material layer is a free space made of air, poly (methyl methacrylate), or SiC.
23. The method according to claim 21 or 22, wherein the wavelength band irradiated from the light source is the dielectric constant part (ε ') of the negative refractive index metamaterial layer
Figure pat00042
To
Figure pat00043
Active phase correction method characterized in that the adjustment to have a range of.
Here, the value of ε " M is the imaginary imaginary part of the negative refractive index metamaterial (ie, ε M = ε ' M + i · ε" M ), and means the intrinsic loss of electromagnetic waves caused by the medium, and ε " A value of 1 is the dielectric imaginary part of the birefringent material (ie ε 1 = ε ′ 1 + i · ε ″ 1 ).
The active phase correction method of claim 19, wherein the negative refractive index metamaterial layer is formed of a SiC dielectric, a TiO 2 dielectric, or a carbon nanotube (CNT) thin film.
27. The method of claim 21 or 25 wherein the birefringent material layer is free space made of air or SiO 2 .
26. The method according to claim 21 or 25, wherein the wavelength realm irradiated from the light source is the dielectric constant part (ε ') of the negative refractive index metamaterial layer
Figure pat00044
To
Figure pat00045
Active phase correction method characterized in that the adjustment to have a range of.
Here, the value of ε " M is the imaginary imaginary part of the negative refractive index metamaterial (ie, ε M = ε ' M + i · ε" M ), and means the intrinsic loss of electromagnetic waves caused by the medium, and ε " A value of 1 is the dielectric imaginary part of the birefringent material (ie ε 1 = ε ′ 1 + i · ε ″ 1 ).
In manufacturing the negative refractive index metamaterial layer of the exposure imaging apparatus according to claim 1,
Negative refractive index metamaterial composed of metal-dielectric composite material, not metal or dielectric pure material, and adopting metal-dielectric composite material with relatively low degree of image blurring on a light source of constant wavelength A method for improving the resolution of an exposure imaging apparatus using a.
In manufacturing the negative refractive index metamaterial layer of the exposure imaging system according to claim 10,
Comprising a metal-dielectric composite material, not a metal or dielectric pure material, and adopting a metal-dielectric composite material having a relatively low degree of image blurring at a fixed wavelength without replacing the light source. A method for improving the resolution of an exposure imaging apparatus using metamaterials.
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