KR20110021623A - Apparatus for thin layer deposition and method for manufacturing of organic light emitting display apparatus using the same - Google Patents

Abstract

PURPOSE: A thin film depositing apparatus and a method for manufacturing an organic electroluminescent display device are provided to improve the uniformity of a deposited thin film. CONSTITUTION: A method for manufacturing an organic electroluminescent display device using a thin film depositing apparatus(100) comprises following steps. A substrate is separated from a thin film depositing apparatus. One side between the thin film depositing apparatus and the substrate is moved relatively to the other side. Deposition materials radiated from the thin film depositing apparatus are deposited on the substrate.

Description

Thin film deposition apparatus and method for manufacturing organic light emitting display device using the same {Apparatus for thin layer deposition and method for manufacturing of organic light emitting display apparatus using the same}

The present invention relates to a thin film deposition apparatus and a method of manufacturing an organic light emitting display device using the same, and more particularly, can be easily applied to a large-scale substrate mass production process, and can improve manufacturing yield and improve thickness uniformity of the deposited film. A thin film deposition apparatus and a method of manufacturing an organic light emitting display device using the same.

Among the display devices, the organic light emitting display device has attracted attention as a next generation display device because of its advantages of having a wide viewing angle, excellent contrast, and fast response speed.

In general, an organic light emitting display device has a stacked structure in which a light emitting layer is inserted between an anode and a cathode so that colors can be realized on the principle that holes and electrons injected from the anode and the cathode recombine in the light emitting layer to emit light. However, such a structure makes it difficult to obtain high-efficiency light emission. Therefore, intermediate layers such as an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer are selectively inserted between each electrode and the light emitting layer.

However, since it is practically very difficult to form fine patterns of organic thin films such as a light emitting layer and an intermediate layer, and the luminous efficiency of red, green, and blue varies depending on the layers, a conventional thin film deposition apparatus has a large area (more than 5G). It is impossible to manufacture large size organic light emitting display devices with satisfactory driving voltage, current density, brightness, color purity, luminous efficiency, and lifetime because it is impossible to pattern mother-glass. It's urgent.

Meanwhile, the organic light emitting display device includes a light emitting layer and an intermediate layer including the same between the first and second electrodes facing each other. In this case, the electrodes and the intermediate layer may be formed by various methods, one of which is deposition. In order to fabricate an organic light emitting display device using a deposition method, a fine metal mask (FMM) having the same pattern as the pattern of the thin film to be formed is in close contact with the surface of the substrate on which the thin film or the like is to be formed. The material is deposited to form a thin film of a predetermined pattern.

The main object of the present invention is a thin film that is easy to manufacture, can be easily applied to a large-scale substrate production process, improves production yield and deposition efficiency, facilitates material recycling, and improves thickness uniformity of the deposited material. An object of the present invention is to provide a deposition apparatus and a method of manufacturing an organic light emitting display apparatus using the same.

A thin film deposition apparatus according to an embodiment of the present invention is a thin film deposition apparatus for forming a thin film on a substrate, the deposition source for emitting a deposition material, and disposed on one side of the deposition source, the first direction A deposition source nozzle unit in which a plurality of deposition source nozzles are formed, a patterning slit sheet disposed to face the deposition source, and having a plurality of patterning slits formed along the first direction, the deposition source nozzle unit and the patterning A blocking plate assembly disposed along the first direction between the slit sheets, the blocking plate assembly having a plurality of blocking plates partitioning a space between the deposition source nozzle unit and the patterning slit sheet into a plurality of deposition spaces; The patterning slits corresponding to each deposition space are formed to have different lengths, and the thin film deposition apparatus is formed to be spaced apart from the substrate by a predetermined degree. The thin film deposition apparatus and the substrate may be formed such that one side thereof is relatively movable with respect to the other side.

In the present invention, the patterning slits may be formed to be longer in length from the center of each deposition space.

In the present invention, the length of the patterning slits corresponding to the center of each deposition space may be formed smaller than the length of the patterning slits corresponding to the end of each deposition space.

In the present invention, the patterning slit sheet may further include a support member for supporting the patterning slit sheet to prevent sagging toward the deposition source.

In the present invention, the support member may be disposed to cross the longitudinal direction of the patterning slit.

In the present invention, the support member may be disposed to be perpendicular to the longitudinal direction of the patterning slit.

In the present invention, a compensation plate may be further disposed between the deposition source nozzle unit and the patterning slit sheet to block at least a portion of the deposition material radiated from the deposition source.

In the present invention, the correction plate may be provided so that the thickness of the thin film is formed substantially the same.

In the present invention, the correction plate may be formed in a lower height as the distance from the center of each deposition space.

In the present invention, the correction plate may be formed in the shape of an arc or cosine curve.

In the present invention, the correction plate may be formed such that the height at the center of each deposition space is lower than the height at the end of each deposition space.

In the present invention, the correction plate may be formed such that the blocking amount of the deposition material at the center of each deposition space is greater than the blocking amount of the deposition material at the end of each deposition space.

In the present invention, the correction plate may be formed between the blocking plates adjacent to each other.

In the present invention, the compensation plate is formed for each of the deposition space, the size or shape of each of the compensation plate may be changed according to the characteristics of the deposition material radiated from the deposition source nozzle disposed in each deposition space. .

In the present invention, the size or shape of each of the compensation plates may be changed so that the thickness of the thin film deposited for each of the plurality of deposition spaces is the same.

In the present invention, each of the plurality of blocking plates is formed in a second direction substantially perpendicular to the first direction, thereby partitioning a space between the deposition source nozzle unit and the patterning slit sheet into a plurality of deposition spaces. can do.

In the present invention, the plurality of blocking plates may be arranged at equal intervals.

In the present invention, the blocking plates and the patterning slit sheet may be formed to be spaced apart at a predetermined interval.

In the present invention, the blocking plate assembly may include a first blocking plate assembly having a plurality of first blocking plates and a second blocking plate assembly having a plurality of second blocking plates.

In the present invention, each of the plurality of first blocking plates and the plurality of second blocking plates is formed in a second direction substantially perpendicular to the first direction, so that the deposition source nozzle unit and the patterning slit sheet The space between can be partitioned into a plurality of deposition spaces.

In the present invention, each of the plurality of first blocking plates and the plurality of second blocking plates may be disposed to correspond to each other.

In the present invention, the first blocking plate and the second blocking plate corresponding to each other may be disposed to be substantially on the same plane.

A method of manufacturing an organic light emitting display device according to an embodiment of the present invention is a method of manufacturing an organic light emitting display device using a thin film deposition apparatus for forming a thin film on a substrate, wherein the substrate is a predetermined degree relative to the thin film deposition apparatus. It may be disposed to be spaced apart, and the deposition material radiated from the thin film deposition apparatus is deposited on the substrate while one side of the thin film deposition apparatus and the substrate is moved relative to the other side. .

In the present invention, the depositing of the deposition material on the substrate may include the deposition material radiated from the thin film deposition apparatus continuously deposited on the substrate while the substrate is moved relative to the thin film deposition apparatus. have.

In the thin film deposition apparatus according to another embodiment of the present invention, a thin film deposition apparatus for forming a thin film on a substrate, a deposition source for emitting a deposition material, and disposed on one side of the deposition source, the first direction A patterning slit sheet having a deposition source nozzle portion in which a plurality of deposition source nozzles are formed along with the deposition source nozzle portion, and having a plurality of patterning slits formed along a second direction perpendicular to the first direction Wherein the plurality of patterning slits are formed to have different lengths from each other, and the deposition is performed while the substrate moves in the first direction with respect to the thin film deposition apparatus, wherein the deposition source, the deposition source nozzle unit, and The patterning slit sheet is integrally formed.

In the thin film deposition apparatus according to another embodiment of the present invention, a thin film deposition apparatus for forming a thin film on a substrate, a deposition source for emitting a deposition material, and disposed on one side of the deposition source, the first direction A patterning slit sheet having a deposition source nozzle portion in which a plurality of deposition source nozzles are formed along with the deposition source nozzle portion, and having a plurality of patterning slits formed along a second direction perpendicular to the first direction And a compensation plate disposed between the deposition source nozzle unit and the patterning slit sheet to block at least a portion of the deposition material radiated from the deposition source, wherein the substrate is in the first direction with respect to the thin film deposition apparatus. Deposition is performed while moving along the deposition source, the deposition source nozzle unit and the patterning slit sheet are integrally formed.

According to the thin film deposition apparatus of the present invention made as described above, it is easy to manufacture, can be easily applied to the mass production process of the substrate, the production yield and deposition efficiency is improved, the recycling of the deposition material is facilitated, the deposition thin film Can improve the uniformity.

1 is a plan view of an organic light emitting display device manufactured by a thin film deposition apparatus according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view of a portion of the organic light emitting display device of FIG. 1.
3 is a perspective view schematically showing a thin film deposition assembly according to an embodiment of the present invention.
4 is a schematic side view of the thin film deposition assembly of FIG. 3.
5 is a schematic plan view of the thin film deposition assembly of FIG. 3.
6A is a view schematically showing a state in which a deposition material is being deposited in a thin film deposition assembly according to an embodiment of the present invention.
FIG. 6B is a diagram illustrating a shadow generated when the deposition space is separated by a blocking plate as shown in FIG. 6A.
FIG. 6C is a diagram illustrating a shadow that occurs when the deposition space is not separated. FIG.
7 is a diagram schematically illustrating a distribution form of a deposition film deposited on a substrate by a thin film deposition apparatus according to an embodiment of the present invention.
8 is a view schematically showing that the deposition material is injected from the deposition source of the deposition apparatus according to an embodiment of the present invention.
9 shows a portion of a patterned slit sheet.
10 is a plan view showing another modification of the patterning slit sheet of the thin film deposition apparatus according to the embodiment of the present invention.
11 is a plan view showing still another modification of the patterning slit sheet of the thin film deposition apparatus according to the embodiment of the present invention.
12 is a plan view showing still another modification of the patterning slit sheet of the thin film deposition apparatus according to the embodiment of the present invention.
13 is a rear perspective view showing still another modification of the patterning slit sheet of the thin film deposition apparatus according to the embodiment of the present invention.
14 is a perspective view schematically showing a thin film deposition apparatus according to another embodiment of the present invention.
FIG. 15 is a rear perspective view illustrating a modification of the patterning slit sheet of the thin film deposition apparatus according to another embodiment of the present invention. FIG.
FIG. 16 is an enlarged view of A of FIG. 13.
17 is a rear perspective view showing another modification of the patterning slit sheet of the thin film deposition apparatus according to another embodiment of the present invention.
18 is a perspective view schematically showing a thin film deposition apparatus according to another embodiment of the present invention.
19 is a schematic side view of the thin film deposition apparatus of FIG. 18.
20 is a schematic plan view of the thin film deposition apparatus of FIG. 18.
FIG. 21 is a diagram illustrating a patterning slit sheet of the thin film deposition apparatus of FIG. 18.
22 is a view showing a patterning slit sheet of a thin film deposition apparatus according to another embodiment of the present invention.
FIG. 23 is a rear view of a patterning slit sheet of a thin film deposition apparatus according to another embodiment of the present invention. FIG.
24 is a view showing a thin film deposition apparatus according to another embodiment of the present invention.
FIG. 25 is a view schematically illustrating a distribution form of a deposition film deposited on a substrate when the deposition source nozzle is not tilted in the thin film deposition apparatus according to the present invention.
FIG. 26 is a view schematically illustrating a distribution form of a deposition film deposited on a substrate when the deposition source nozzle is tilted in the thin film deposition apparatus according to the present invention.

Hereinafter, with reference to the embodiments of the present invention shown in the accompanying drawings will be described in detail the present invention. Shapes and sizes of the elements in the drawings may be exaggerated for more clear description, elements denoted by the same reference numerals in the drawings are the same element.

1 is a plan view of an organic light emitting display device manufactured by a thin film deposition apparatus according to an embodiment of the present invention.

Referring to FIG. 1, an organic light emitting display device may include a pixel region 30 and a circuit region 40 at an edge of the pixel region 30. The pixel region 30 may include a plurality of pixels, and each of the pixels may include a light emitting part that emits light to implement a predetermined image.

According to an embodiment of the present invention, the light emitting unit may be formed of a plurality of sub-pixels each having an organic EL device. In the case of a full color organic light emitting display device, subpixels of red (R), green (G), and blue (B) may be arranged in various patterns such as a line, a mosaic, and a grid to include pixels. The organic light emitting display device manufactured by the thin film deposition apparatus according to the exemplary embodiment of the present invention may be a mono color flat panel display device, not a full color flat panel display device.

The circuit region 40 may control an image signal or the like input to the pixel region 30. In the organic light emitting display device, at least one thin film transistor may be provided in the pixel region 30 and the circuit region 40, respectively.

The thin film transistor provided in the pixel region 30 includes a switching thin film transistor which transmits a data signal to the light emitting element according to the gate line signal and controls its operation, and a predetermined current is applied to the organic electroluminescent element according to the data signal. There may be a pixel portion thin film transistor such as a driving thin film transistor for driving to flow. In addition, the thin film transistor provided in the circuit region 40 may include a circuit part thin film transistor provided to implement a predetermined circuit.

Of course, the number and arrangement of the thin film transistors may vary depending on the characteristics of the display, the driving method, and the like, and the arrangement may be various.

FIG. 2 is a cross-sectional view of a sub-pixel of the organic light emitting display device of FIG. 1.

As shown in FIG. 2, a buffer layer 51 is formed on a glass or plastic substrate 50, and a thin film transistor TFT and an organic light emitting diode OLED may be formed thereon.

The active layer 52 of a predetermined pattern may be disposed on the buffer layer 51 of the substrate 50. The gate insulating layer 53 may be disposed on the active layer 52, and the gate electrode 54 may be disposed in a predetermined region above the gate insulating layer 53. The gate electrode 54 may be connected to a gate line (not shown) for applying the thin film transistor on / off signal. An interlayer insulating layer 55 is formed on the gate electrode 54, and the source / drain electrodes 56 and 57 are respectively formed in the source / drain regions 52b and 52c of the active layer 52 through the contact holes. It may be formed to contact. A passivation film 58 made of SiO ₂ , SiNx, or the like is formed on the source / drain electrodes 56 and 57, and acrylic, polyimide, and BCB are formed on the passivation film 58. The planarization layer 59 may be formed of an organic material such as benzocyclobutene. A pixel electrode 61 serving as an anode of the organic light emitting diode OLED may be formed on the planarization layer 59, and a pixel define layer 60 may be formed of an organic material to cover the pixel electrode 61. After the predetermined opening is formed in the pixel defining layer 60, the organic layer 62 may be formed on the pixel electrode 61 exposed to the outside by forming an upper portion and an opening of the pixel defining layer 60. . The organic layer 62 may include a light emitting layer. The present invention is not necessarily limited to such a structure, and the structure of various organic light emitting display devices may be applied as it is.

The organic light emitting diode OLED displays predetermined image information by emitting red, green, and blue light according to the flow of current, and is connected to the drain electrode 56 of the thin film transistor to receive positive power therefrom. The pixel electrode 61 and the counter electrode 63 provided to cover all the pixels to supply negative power, and the organic film 62 disposed between the pixel electrodes 61 and the counter electrode 63 to emit light. Can be made.

The pixel electrode 61 and the counter electrode 63 are insulated from each other by the organic layer 62, and apply light to the organic layer 62 to emit light in the organic layer 62.

The organic layer 62 may be a low molecular or polymer organic layer. When the low molecular organic layer is used, a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), An electron transport layer (ETL), an electron injection layer (EIL), and the like may be formed by stacking a single or a composite structure. The organic materials usable may also be copper phthalocyanine (CuPc) or N. , N-di (naphthalen-1-yl) -N, N'-diphenyl-benzidine (N, N'-Di (naphthalene-1-yl) -N, N'-diphenyl-benzidine: NPB), tris- Various applications include 8-hydroxyquinoline aluminum (Alq3) and the like. These low molecular weight organic films can be formed by a vacuum deposition method.

In the case of the polymer organic film, the structure may be generally provided as a hole transporting layer (HTL) and a light emitting layer (EML). In this case, PEDOT is used as the hole transporting layer, and poly-phenylenevinylene (PPV) and polyfluorene (Polyfluorene) are used as the light emitting layer. A polymer organic material such as) may be used, and it may be formed by screen printing or inkjet printing.

Such an organic film is not necessarily limited thereto, and various embodiments may be applied.

The pixel electrode 61 functions as an anode electrode, and the counter electrode 63 functions as a cathode electrode. Of course, the polarities of these pixel electrodes 61 and the counter electrode 63 may be reversed.

The pixel electrode 61 may be provided as a transparent electrode or a reflective electrode, and when used as a transparent electrode, may be provided as ITO, IZO, ZnO, or In ₂ O ₃ , and when used as a reflective electrode, Ag, Mg After forming a reflecting film with Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and a compound thereof, ITO, IZO, ZnO, or In ₂ O ₃ can be formed thereon.

Meanwhile, the counter electrode 63 may also be provided as a transparent electrode or a reflective electrode. When the counter electrode 63 is used as a transparent electrode, since the counter electrode 63 is used as a cathode, a metal having a small work function, that is, Li, Ca, or LiF is used. / Ca, LiF / Al, Al, Ag, Mg, and their compounds are deposited to face the organic film 62, and then formed thereon a transparent electrode such as ITO, IZO, ZnO, or In ₂ O ₃ The auxiliary electrode layer or the bus electrode line may be formed of the solvent material. And, when used as a reflective electrode can be formed by depositing the above Li, Ca, LiF / Ca, LiF / Al, Al, Ag, Mg, and their compounds.

In such an organic light emitting display device, the organic layer 62 including the light emitting layer may be formed by a thin film deposition apparatus (see 100 of FIG. 3) to be described later.

Hereinafter, a thin film deposition apparatus and a manufacturing method of an organic light emitting display apparatus using the same according to an embodiment of the present invention will be described in detail.

3 is a perspective view schematically showing a thin film deposition assembly according to an embodiment of the present invention, FIG. 4 is a schematic side view of the thin film deposition assembly of FIG. 3, and FIG. 5 is a schematic plan view of the thin film deposition assembly of FIG. 3. to be.

3, 4, and 5, the thin film deposition assembly 100 according to the exemplary embodiment of the present invention includes a deposition source 110, a deposition source nozzle unit 120, a blocking plate assembly 130, and a patterning slit. Sheet 150.

3, 4, and 5, although the chamber is not shown for convenience of description, all the components of FIGS. 3 to 5 may be disposed in a chamber in which an appropriate degree of vacuum is maintained. This is to ensure the straightness of the deposition material.

In detail, in order for the deposition material 115 emitted from the deposition source 110 to pass through the deposition source nozzle unit 120 and the patterning slit sheet 150 to be deposited on the substrate 400 in a desired pattern, a chamber (not shown) is basically used. The inside must maintain the same high vacuum as the FMM (Fine matel mask) deposition method. In addition, when the temperature of the blocking plate 131 and the patterning slit sheet 150 is sufficiently lower than the temperature of the deposition source 110 (about 100 ° or less), the space between the deposition source nozzle unit 120 and the patterning slit sheet 150 is high vacuum. I can keep it in a state. As such, when the temperature of the blocking plate assembly 130 and the patterning slit sheet 150 is sufficiently low, all of the deposition material 115 radiating in an undesired direction may be adsorbed on the surface of the blocking plate assembly 130 to maintain high vacuum. Since the collision between the deposition materials does not occur, the straightness of the deposition materials can be secured. In this case, the blocking plate assembly 130 faces the high temperature deposition source 110, and the temperature closes to the deposition source 110 at a maximum of about 167 ° C., so that a partial cooling device may be further provided if necessary. To this end, the blocking plate assembly 130 may be formed with a cooling member (not shown).

In such a chamber (not shown), a substrate 400 which is a deposition target is disposed. The substrate 400 may be a substrate for a flat panel display, and a large area substrate such as a mother glass capable of forming a plurality of flat panel displays may be applied.

Here, in one embodiment of the present invention, the substrate 400 is characterized in that the deposition proceeds while moving relative to the thin film deposition assembly 100.

In detail, in the conventional FMM deposition method, since the FMM size must be formed to be the same as the substrate size, the FMM must be enlarged as the substrate size increases. However, there has been a problem that it is not easy to manufacture an enlarged FMM, and it is not easy to align the FMM to a precise pattern.

In order to solve such a problem, the thin film deposition assembly 100 according to an embodiment of the present invention is characterized in that the deposition is performed while the thin film deposition assembly 100 and the substrate 400 move relative to each other. In other words, the substrate 400 disposed to face the thin film deposition assembly 100 may move in the Y-axis direction and may continuously perform deposition. That is, deposition is performed by scanning. Here, although the substrate 400 is shown to be deposited while moving in the Y-axis direction in the chamber (not shown), the spirit of the present invention is not limited thereto, the substrate 400 is fixed and thin film deposition The assembly 100 itself may move in the Y-axis direction to perform deposition.

Accordingly, the thin film deposition assembly 100 of the present invention can make the patterning slit sheet 150 much smaller than the conventional FMM. That is, in the case of the thin film deposition assembly 100 of the present invention, since the substrate 400 moves in the Y-axis direction and performs deposition continuously, that is, in a scanning manner, X of the patterning slit sheet 150 If only the width in the axial direction and the width in the X-axis direction of the substrate 400 are substantially the same, the length of the Y-axis direction of the patterning slit sheet 150 may be formed to be much smaller than the length of the substrate 400. . Thus, since the patterning slit sheet 150 can be made much smaller than the conventional FMM, the patterning slit sheet 150 of the present invention is easy to manufacture. That is, in all processes, such as etching of the patterning slit sheet 150, precision tension and welding operations thereafter, movement and cleaning operations, the patterning slit sheet 150 having a small size is advantageous over the FMM deposition method. In addition, this becomes more advantageous as the display device becomes larger.

As such, in order for the deposition to be performed while the thin film deposition assembly 100 and the substrate 400 move relative to each other, it is preferable that the thin film deposition assembly 100 and the substrate 400 are spaced to some extent. This will be described later in detail.

Meanwhile, a deposition source 110 in which the deposition material 115 is received and heated may be disposed on the side of the chamber that faces the substrate 400. As the deposition material 115 stored in the deposition source 110 is vaporized, deposition may be performed on the substrate 400.

In detail, the deposition source 110 includes the crucible 111 filled with the deposition material 115 therein, and the deposition material 115 filled inside the crucible 111 by heating the crucible 111. One side, in detail, may be provided with a heater 112 for evaporating to the deposition source nozzle unit 120 side.

The deposition source nozzle unit 120 may be disposed on one side of the deposition source 110, in detail, the side of the deposition source 110 that faces the substrate 400. In addition, a plurality of deposition source nozzles 121 may be formed in the deposition source nozzle unit 120 along the X-axis direction. Here, each of the plurality of deposition source nozzles 121 may be formed at the same interval. The evaporation material 115 vaporized in the evaporation source 110 passes through the evaporation source nozzle unit 120 such that the evaporation material 115 is directed toward the substrate 400 as the evaporation target.

The blocking plate assembly 130 may be disposed at one side of the deposition source nozzle unit 120. The blocking plate assembly 130 may include a plurality of blocking plates 131 and a blocking plate frame 132 provided outside the blocking plates 131. The plurality of blocking plates 131 may be arranged parallel to each other along the X-axis direction. Here, each of the plurality of blocking plates 131 may be disposed at the same interval. In addition, each of the blocking plates 131 may be arranged to be parallel to the YZ plane when viewed in the drawing, that is, perpendicular to the X-axis direction. The plurality of blocking plates 131 disposed as described above may serve to divide the space between the deposition source nozzle unit 120 and the patterning slit sheet 150 into a plurality of deposition spaces S. That is, in the thin film deposition assembly 100 according to the exemplary embodiment, the deposition space S is separated by each deposition source nozzle 121 to which the deposition material is sprayed by the blocking plates 131. It features one.

Here, each of the blocking plates 131 may be disposed between the deposition source nozzles 121 adjacent to each other. In other words, one deposition source nozzle 121 may be disposed between the blocking plates 131 adjacent to each other. Preferably, the deposition source nozzle 121 may be located at the center of the barrier plate 131 adjacent to each other. As described above, the blocking plate 131 partitions the space between the deposition source nozzle unit 120 and the patterning slit sheet 150 into a plurality of deposition spaces S, thereby depositing one discharge source nozzle 121. The material may not be mixed with deposition materials discharged from other deposition source nozzles 121 but may be deposited on the substrate 400 through the patterning slit 151. In other words, the blocking plates 131 may serve to guide the movement path in the X-axis direction of the deposition material so that the deposition material discharged through the deposition source nozzle 121 is not dispersed and maintains straightness.

As such, by providing the blocking plates 131 to secure the straightness of the deposition material, the size of the shadow formed on the substrate can be significantly reduced, and thus the thin film deposition assembly 100 and the substrate 400 may be uniformly fixed. It becomes possible to space apart. This will be described later in detail.

Meanwhile, a blocking plate frame 132 may be further provided outside the plurality of blocking plates 131. The blocking plate frame 132 is provided on the upper and lower surfaces of the plurality of blocking plates 131 to support the positions of the plurality of blocking plates 131, and at the same time, the deposition material discharged through the deposition source nozzle 121 is dispersed. It may serve to guide the movement path in the Y-axis direction of the deposition material.

Meanwhile, although the deposition source nozzle unit 120 and the blocking plate assembly 130 are shown to be spaced apart to some extent, the spirit of the present invention is not limited thereto. That is, in order to prevent the heat emitted from the deposition source 110 from being conducted to the blocking plate assembly 130, the deposition source nozzle unit 120 and the blocking plate assembly 130 may be formed to be spaced apart to some extent, and the deposition may be performed. When an appropriate heat insulating means is provided between the original nozzle unit 120 and the blocking plate assembly 130, the deposition source nozzle unit 120 and the blocking plate assembly 130 may be in contact with each other.

Meanwhile, the blocking plate assembly 130 may be formed to be separated from the thin film deposition assembly 100. In detail, the conventional FMM deposition method has a problem that the deposition efficiency is low. Here, the deposition efficiency refers to the ratio of the material vaporized on the substrate among the vaporized material from the deposition source. The deposition efficiency in the conventional FMM deposition method is not only about 32% low, but in the conventional FMM deposition method, since about 68% of organic matter which is not used for deposition is deposited everywhere in the evaporator, the recycling is easy. There was a problem of not doing.

In order to solve such a problem, in the thin film deposition assembly 100 according to the exemplary embodiment of the present invention, since the deposition space is separated from the external space using the blocking plate assembly 130, the deposition space is not deposited on the substrate 400. Deposition materials can be deposited mostly in the barrier plate assembly 130. Therefore, when the barrier plate assembly 130 is formed to be detachable from the thin film deposition assembly 100, and a large amount of deposition material is accumulated in the barrier plate assembly 130 after a long time deposition, the barrier plate assembly 130 is separated and separated. The deposition material may be recovered by placing it in a deposition material recycling apparatus. Through such a configuration, it is possible to obtain an effect of reducing the manufacturing cost by increasing the deposition material recycling rate.

The patterning slit sheet 150 and the patterning slit sheet frame 155 may be further provided between the deposition source 110 and the substrate 400. The patterning slit sheet frame 155 is formed in a substantially window-like shape, and the patterning slit sheet 150 may be coupled to the inside thereof. In addition, a plurality of patterning slits 151 may be formed in the patterning slit sheet 150 along the X-axis direction. The lengths of the patterning slits 151 corresponding to one deposition space S may not be the same as illustrated in FIG. 1. This is to improve the thickness uniformity of the deposited thin film. This will be described later.

The deposition material 115 vaporized in the deposition source 110 may pass through the deposition source nozzle unit 120 and the patterning slit sheet 150 toward the substrate 400, which is the deposition target. In this case, the patterning slit sheet 150 may be manufactured by etching, which is the same method as a method of manufacturing a conventional fine metal mask (FMM), in particular, a stripe type mask.

Here, the thin film deposition assembly 100 according to the exemplary embodiment of the present invention may have a greater number of patterning slits 151 than the total number of deposition source nozzles 121. In addition, the number of patterning slits 151 may be greater than the number of deposition source nozzles 121 disposed between two blocking plates 131 adjacent to each other.

 That is, one deposition source nozzle 121 may be disposed between two blocking plates 131 adjacent to each other. At the same time, a plurality of patterning slits 151 may be disposed between two blocking plates 131 neighboring each other. In addition, the space between the deposition source nozzle unit 120 and the patterning slit sheet 150 is partitioned by two blocking plates 131 adjacent to each other, and the deposition space S for each deposition source nozzle 121. This is separated. Therefore, the deposition material radiated from one deposition source nozzle 121 may be deposited on the substrate 400 through the patterning slits 151 located in the same deposition space (S).

Meanwhile, the above-described blocking plate assembly 130 and the patterning slit sheet 150 may be formed to be spaced apart from each other to some extent, and the blocking plate assembly 130 and the patterning slit sheet 150 may be separated from each other by the connecting member 135. Can be connected. In detail, since the temperature of the blocking plate assembly 130 rises by about 100 ° C. or more by the deposition source 110 in a high temperature state, the temperature of the raised blocking plate assembly 130 is not conducted to the patterning slit sheet 150. The blocking plate assembly 130 and the patterning slit sheet 150 are spaced apart to some extent.

As described above, the thin film deposition assembly 100 according to the embodiment of the present invention performs deposition while moving relative to the substrate 400, and thus the thin film deposition assembly 100 is performed on the substrate 400. The patterning slit sheet 150 may be formed to be spaced apart from the substrate 400 to move relatively. In addition, in order to solve a shadow problem that occurs when the patterning slit sheet 150 and the substrate 400 are spaced apart, the blocking plate 131 between the deposition source nozzle unit 120 and the patterning slit sheet 150. By providing the straightness of the deposition material to provide a, it is possible to significantly reduce the size of the shadow (shadow) formed on the substrate.

In detail, in the conventional FMM deposition method, a deposition process was performed by closely attaching a mask to a substrate in order to prevent shadows on the substrate. However, when the mask is in close contact with the substrate as described above, there has been a problem that a defect problem occurs due to contact between the substrate and the mask. Also, since the mask cannot be moved relative to the substrate, the mask must be formed to the same size as the substrate. Therefore, as the display device becomes larger, the size of the mask must be increased, but there is a problem that it is not easy to form such a large mask.

In order to solve such a problem, in the thin film deposition assembly 100 according to the exemplary embodiment of the present invention, the patterning slit sheet 150 is disposed to be spaced apart from the substrate 400, which is the deposition target, at a predetermined interval. This can be realized by providing the blocking plate 131 so that the shadow generated on the substrate 400 is reduced.

According to the present invention, after forming the mask smaller than the substrate, it is possible to perform the deposition while moving the mask with respect to the substrate, it is possible to obtain the effect that the mask fabrication becomes easy. Moreover, the effect which prevents the defect by the contact between a board | substrate and a mask can be acquired. In addition, since the time for bringing the substrate into close contact with the mask is unnecessary in the step, an effect of increasing the manufacturing speed can be obtained.

In the following, the size of the shadow formed with and without the blocking plate is compared in detail.

FIG. 6A is a view schematically showing a state in which a deposition material is being deposited in a thin film deposition assembly according to an embodiment of the present invention, and FIG. 6B is a shade generated when a deposition space is separated by a blocking plate as shown in FIG. 6A. FIG. 6C is a diagram illustrating a shadow that occurs when the deposition space is not separated.

Referring to FIG. 6A, the deposition material vaporized in the deposition source 110 is deposited on the substrate 400 by passing through the deposition source nozzle unit 120 and the patterning slit sheet 150. In this case, since the space between the deposition source nozzle unit 120 and the patterning slit sheet 150 is partitioned into a plurality of deposition spaces S by the blocking plates 131, the deposition source nozzles are formed by the blocking plate 131. The deposition material from each deposition source nozzle 121 of the portion 120 is not mixed with the deposition material from another deposition source nozzle 121.

When the space between the deposition source nozzle unit 120 and the patterning slit sheet 150 is partitioned by the barrier plate assembly 130, as shown in FIG. 6B, the deposition materials are at an angle of about 55 ° to 90 °. It passes through the furnace patterning slit sheet 150 and is deposited on the substrate 400. That is, the incident angle of the deposition material passing through the patterning slit 151 next to the blocking plate assembly 130 is about 55 °, and the incident angle of the deposition material passing through the patterning slit 151 of the central portion is the substrate 400. Almost perpendicular to In this case, the width SH ₁ of the shaded region generated in the substrate 400 is determined by Equation 1 below.

(s = distance between the patterned slit sheet and the substrate, d _s = width of the deposition source nozzle,

h = distance between deposition source and patterning slit sheet)

On the other hand, when the space between the deposition source nozzle portion and the patterning slit sheet is not partitioned by the blocking plates, as illustrated in FIG. 6C, the deposition materials may be formed at various angles in a wider range than in FIG. 6B. Will pass. That is, in this case, not only the deposition material radiated from the deposition source nozzle directly above the patterning slit, but also the deposition materials radiated from another deposition source nozzle are deposited on the substrate 400 through the patterning slit, The width of the formed shaded area SH ₂ becomes very large compared with the case where the blocking plate is provided. In this case, the width SH ₂ of the shaded region generated in the substrate 400 is determined by Equation 2 below.

(s = distance between the patterned slit sheet and the substrate, d = distance between neighboring blocking plates,

h = distance between deposition source and patterning slit sheet)

When comparing Equation 1 and Equation 2, d (interval between neighboring blocking plates) is formed to be much larger than several times several tens more than d _s (width of the evaporation source nozzle), so that the evaporation source nozzle unit 120 If the space between the) and the patterning slit sheet 150 is partitioned by the blocking plates 131, it can be seen that the shading is much smaller. Here, in order to reduce the width (SH ₂ ) of the shaded area generated in the substrate 400, (1) reduce the interval between the blocking plate 131 is installed (d reduction), or (2) the patterning slit sheet 150 The distance between the substrate 400 and the substrate 400 should be reduced (s reduced) or (2) the height of the blocking plate 131 should be increased (h increased).

As such, by providing the blocking plate 131, the shadow generated on the substrate 400 may be reduced, and thus the patterning slit sheet 150 may be spaced apart from the substrate 400.

Hereinafter, a patterning slit sheet for securing film uniformity of the entire substrate will be described in detail.

7 is a diagram schematically illustrating a distribution form of a deposition film deposited on a substrate by a thin film deposition apparatus according to an embodiment of the present invention. Here, FIG. 7 shows a case where the organic radiation amount and the radiation coefficient emitted from each opening (that is, the deposition source nozzles (see 121 in FIG. 1)) are all the same. In FIG. 5, S denotes each deposition space, and d denotes a distance between neighboring blocking plates.

In Fig. 7, the distribution form of the deposited film deposited by the thin film deposition apparatus having the patterning slit sheet with the same length of the patterning slits is shown by line A, and the thin film deposition with the patterning slit sheet having different lengths of the patterning slits is shown. The distribution form of the deposited film deposited by the device is shown by line B. FIG.

As shown in FIG. 7, the emission of organic matter in a vacuum is the most perpendicular to the deposition source nozzle (see 121 in FIG. 1), that is, the center portion of each deposition space S according to the cosine law. The organics are emitted and the closer the blocking plate (see 131 of FIG. 1) is, the less the amount of organics is emitted. Therefore, the deposition film deposited by the thin film deposition apparatus having the patterning slit sheet having the same length of the patterning slit may be formed in the form as shown in line A of FIG. 5. That is, when only the respective deposition spaces S are separated, the deposition film is formed such that the center portion is convex, and when viewed as a whole, the deposition film may be formed in such a manner that the convex portion and the concave portion are repeated.

In this case, the relationship between the distance from the center of each deposition space S and the thickness of the deposited film can be easily derived through experiments, and in most cases it can be expressed as a function of cos ⁿ (θ).

In order to remove the non-uniformity of the thickness of the deposited film generated in each deposition space S as described above, the lengths of the patterning slits 151 may be formed differently.

8 is a view schematically showing that the deposition material is injected from the deposition source of the deposition apparatus according to an embodiment of the present invention.

The profile of the deposited film may be determined by the distance between the deposition source 110 and the substrate 400 and the n value of cos ⁿ (θ). Since the deposition apparatus according to an embodiment of the present invention performs deposition while moving relative to the substrate, deposition materials overlap with each other in the moving direction. Thus, the thickness of the deposited film according to the position is determined by the equation (3).

(TS is the distance between the deposition source and the substrate, xc is the center position of the substrate corresponding to each deposition space (S), xe is any position on the substrate corresponding to each deposition space (S), y is the length of the patterning slit) )

The left side of the equation (3) means the thickness of the deposition film at the center position on the substrate corresponding to each deposition space (S), the right side of the equation (3) is any position on the substrate corresponding to each deposition space (S) Means the thickness of the deposited film. Therefore, when the left side and the right side of Equation 3 are the same, the thickness of the deposited film may be uniformly formed. In order to determine the length of the patterning slit for uniformly forming the thickness of the deposited film, Equation 3 is obtained by polynomial of x for y.

Equation 4 is represented by four variable coefficients having a highest order term of four, but the present invention is not limited thereto and may be a term of five or more orders.

9 shows a part of the patterning slit sheet according to equations (3) and (4) above. Specifically, FIG. 9 shows a portion of a patterned slit sheet corresponding to a deposition space formed by adjacent barrier walls. Referring to FIG. 9, the patterning slits 151 of the patterning slit sheet are different in length from each other, and the length y of the patterning slits may increase in length from the center (x = 0) to the outer portion.

FIG. 10 is a plan view illustrating the patterning slit sheet 150 of the thin film deposition apparatus according to the exemplary embodiment of the present invention illustrated in FIG. 1. Referring to FIG. 10, the patterning slits 151a, 151b, and 151c may have a length longer as the deposition space S moves away from the center. That is, the length t2 of the patterning slit 151a corresponding to the center of the deposition space S among the patterning slits corresponding to the deposition space S is the length among the patterning slits corresponding to the deposition space S. The smaller the length of the patterning slit is, the longer it is adjacent to the patterning slit 151a. Accordingly, the length t2 of the patterning slit 151a corresponding to the center of the deposition space S is the smallest, and the lengths t1 and t3 of the patterning slits 151b and 151c corresponding to both ends of the deposition space S. ) Is the longest. The shape of the patterning slits 151a, 151b, and 151c may be repeatedly disposed on the patterning slit sheet 150.

Patterning slits as described above may serve to block some of the deposition material moving from the deposition source nozzle (see 121 of FIG. 1) toward the patterning slit sheet 150. Specifically, since the deposited film deposited by the thin film deposition apparatus has a convex shape in the center portion, in order to make it uniform, some of the deposition material directed to the center portion must be blocked. Accordingly, some of the deposition materials may be blocked by forming different lengths of the patterning slits 151a, 151b, and 151c. At this time, the patterning slit sheet 150 is patterned corresponding to a relatively small central portion because the lengths of the patterning slits 151a, 151b, and 151c are formed to extend from the center of the deposition space S toward both ends. Less deposition material passes through the slit 151a, and more deposition material passes through the patterning slits 151b and 151c corresponding to the end of the relatively long deposition space S. In this case, the lengths of the patterning slits 151a, 151b, and 151c are formed such that the thickness of the thinnest portion in the deposition space S, generally, the film thickness of both ends of the deposition space S, becomes the total film thickness. It can form differently.

As described above, by forming the lengths of the patterning slits 151a, 151b, and 151c differently, the deposition film deposited by the thin film deposition apparatus may be corrected to have a shape such as line B of FIG. 5. In other words, the portion where the deposition material is deposited is small so that the length of the patterning slit is smaller to allow the deposition material to penetrate, and the portion where the deposition material is deposited is larger so that the length of the patterning slit is increased so that the thickness of the entire deposition material is uniform. Can be corrected.

According to the present invention, since the uniformity of the thin film deposited on the substrate is uniformly formed within an error range of 1 to 2%, an effect of improving product quality and reliability can be obtained.

11 is a plan view showing another modification of the patterning slit sheet of the thin film deposition apparatus according to the embodiment of the present invention. Referring to FIG. 11, the patterning slit sheet 250 includes patterning slits having different lengths. The patterning slit sheet 250 of FIG. 11 is the same as the patterning slit sheet 150 of FIG. 8 in that it has patterning slits of different lengths. However, in the patterning slit sheet 150 of FIG. 10, the patterning slits 151a, 151b, and 151c are located at the same position and have a difference in length from the bottom thereof, but the patterning slit sheet 250 of FIG. 11 is a patterning slit. The patterning slit sheet 250 of FIG. 11 differs from the patterning slit sheet 150 of FIG. 8 in that 251a is smaller at both the upper and lower portions of the length of the patterning slits 251b and 251c. Despite the difference in the position of the patterning slits, the patterning slit sheet 250 of FIG. 11 also has the length of the patterning slits 251a, 251b, and 251c from the center of the deposition space S to both ends thereof. It is the same as the patterning slit sheet 150. Accordingly, less deposition material passes through the patterning slit 251a corresponding to the relatively small central portion, and deposition occurs in the patterning slits 251b and 251c corresponding to the end of the relatively long deposition space S. A large amount of material may pass therethrough so that the thickness of the deposited thin film may be uniformly formed. .

12 is a plan view showing still another modification of the patterning slit sheet of the thin film deposition apparatus according to the embodiment of the present invention. Referring to FIG. 12, the patterning slit sheet 350 may further include a correction plate 390. The compensating plate 390 may be formed in a form in which approximately circular arcs or cosine curves are vertically coupled between blocking plates adjacent to each other (see 131 of FIG. 1). The correction plate 390 may serve to block some of the deposition material that moves from the deposition source nozzle (see 121 of FIG. 1) toward the patterning slit (see 151 of FIG. 1).

In detail, since the deposited film deposited by the thin film deposition apparatus has a convex shape in the center portion, in order to make it uniform, some of the deposition material directed to the center portion must be blocked. Accordingly, the compensation plate 390 may be disposed in the middle of the movement path of the deposition material, thereby blocking some of the deposition material. At this time, since the correction plate 390 is formed in a shape that combines the arc to the cosine curve up and down, the deposition material collides a lot in the relatively protruding center portion to block more deposition material, and the deposition material at the edge portion This less collision can result in less blocking of the deposition material. In this case, the compensation plate 390 may be formed such that the film thickness of the thinnest portion in the deposition space S, and generally, both ends of the deposition space S, becomes the entire film thickness.

As such, by arranging the compensation plate 390 in the movement path of the deposition material, the deposition film deposited by the thin film deposition apparatus may be corrected to have a shape such as line B of FIG. 7. That is, the portion of the deposition material is deposited a lot of the deposition plate to increase the height of the compensation plate to block the deposition material, the portion of the deposition material is deposited by reducing the height of the compensation plate to reduce the deposition material by reducing the thickness of the overall deposition material, The deposition amount is corrected to be uniform.

According to the present invention, since the uniformity of the thin film deposited on the substrate is uniformly formed within an error range of 1 to 2%, an effect of improving product quality and reliability can be obtained.

13 is a rear perspective view showing still another modification of the patterning slit sheet of the thin film deposition apparatus according to the embodiment of the present invention. Referring to FIG. 11, the back surface of the patterning slit sheet 150 may include a support member 160 for supporting the patterning slit sheet 150. The support member 160 may be disposed on the rear surface of the patterning slit sheet 150 to prevent the patterning slit sheet 150 from sagging toward the deposition source (see 110 in FIG. 1). The support member 160 may have a rod shape. The support member 160 may be disposed on the rear surface of the patterning slit sheet 150 to intersect the longitudinal direction of the patterning slit 151, and in one embodiment, the support member 160 may have a patterning slit 151 in the longitudinal direction thereof. It may be arranged to be perpendicular to the longitudinal direction of. Both ends of the support member 160 may be fixed to the patterning slit sheet frame 155.

14 is a perspective view schematically showing a thin film deposition assembly according to another embodiment of the present invention.

Referring to FIG. 14, the thin film deposition assembly 500 according to another embodiment of the present invention may include a deposition source 510, a deposition source nozzle unit 520, a first blocking plate assembly 530, and a second blocking plate assembly ( 540, the patterning slit sheet 550, and the substrate 400.

Here, although the chamber is not shown in FIG. 14 for convenience of description, all the components of FIG. 14 are preferably disposed in a chamber in which an appropriate degree of vacuum is maintained. This is to ensure the straightness of the deposition material.

In such a chamber (not shown), a substrate 400, which is a deposition target, may be disposed. In addition, a deposition source 510 in which the deposition material 515 is received and heated may be disposed on a side opposite to the substrate 400 in the chamber (not shown). The deposition source 510 may include a crucible 511 and a heater 512.

The deposition source nozzle unit 520 may be disposed on one side of the deposition source 510, in detail, the side of the deposition source 510 facing the substrate 400. In addition, a plurality of deposition source nozzles 521 may be formed in the deposition source nozzle unit 520 along the X-axis direction.

One side of the deposition source nozzle unit 520 may be provided with a first blocking plate assembly 530. The first blocking plate assembly 530 may include a plurality of first blocking plates 531 and a first blocking plate frame 532 disposed outside the first blocking plates 531.

One side of the first blocking plate assembly 530 may be provided with a second blocking plate assembly 540. The second blocking plate assembly 540 may include a plurality of second blocking plates 541 and a second blocking plate frame 542 provided outside the second blocking plates 541.

The patterning slit sheet 550 and the patterning slit sheet frame 555 may be further provided between the deposition source 510 and the substrate 400. The patterning slit sheet frame 555 is formed in a lattice shape, such as a window frame, and the patterning slit sheet 550 may be coupled to the inside thereof. In addition, a plurality of patterning slits 551 may be formed in the patterning slit sheet 550 along the X-axis direction.

Here, the thin film deposition assembly 500 according to the second embodiment of the present invention is characterized in that the blocking plate assembly is separated into the first blocking plate assembly 530 and the second blocking plate assembly 540.

In detail, the plurality of first blocking plates 531 may be provided parallel to each other along the X-axis direction. The plurality of first blocking plates 531 may be formed at equal intervals. In addition, each first blocking plate 531 may be formed to be parallel to the YZ plane when viewed in the drawing, that is, perpendicular to the X-axis direction.

In addition, the plurality of second blocking plates 541 may be provided in parallel with each other along the X-axis direction. The plurality of second blocking plates 541 may be formed at equal intervals. Also, each second blocking plate 541 may be formed to be parallel to the YZ plane when viewed in the drawing, that is, perpendicular to the X-axis direction.

The plurality of first blocking plates 531 and the second blocking plates 541 disposed as described above may serve to partition a space between the deposition source nozzle unit 520 and the patterning slit sheet 550. Here, in the thin film deposition assembly 500 according to the second embodiment of the present invention, the deposition source nozzles 521 through which the deposition material is sprayed by the first blocking plate 531 and the second blocking plate 541. It is characterized in that the deposition space is separated by.

Here, each of the second blocking plates 541 may be disposed to correspond one-to-one with each of the first blocking plates 531. In other words, each of the second blocking plates 541 may be aligned with each of the first blocking plates 531 and disposed parallel to each other. That is, the first blocking plate 531 and the second blocking plate 541 corresponding to each other may be disposed on the same plane. As such, the space between the deposition source nozzle unit 520 and the patterning slit sheet 550 to be described later is partitioned by the first blocking plates 531 and the second blocking plates 541 arranged side by side. The deposition material discharged from one deposition source nozzle 521 may be deposited on the substrate 400 through the patterning slit 551 without being mixed with the deposition materials discharged from the other deposition source nozzle 521. . In other words, the first blocking plates 531 and the second blocking plates 541 guide the movement path in the X-axis direction of the deposition material so that the deposition material discharged through the deposition source nozzle 521 is not dispersed. Can be done.

In the drawing, although the length of the first blocking plate 531 and the width of the second blocking plate 541 in the X-axis direction are the same, the spirit of the present invention is not limited thereto. That is, the second blocking plate 541 which requires precise alignment with the patterning slit sheet 550 is formed relatively thin, while the first blocking plate 531 that does not require precise alignment is relatively thin. It will also be possible to form thick, so that the production is easy.

FIG. 15 is a rear perspective view illustrating a modification of the patterning slit sheet of the thin film deposition apparatus according to another embodiment of the present invention. FIG. Referring to FIG. 15, the support member 560 may be disposed on the rear surface of the patterning slit sheet 550. The support member 560 may be disposed on the rear surface of the patterned slit sheet 550 to prevent the patterned slit sheet 550 from sagging toward the deposition source (see 510 of FIG. 14). The support member 560 may have a rod shape. The support member 560 may be disposed on the rear surface of the patterning slit sheet 550 to intersect the longitudinal direction of the patterning slit 551. In one embodiment, the support member 560 has a patterning slit 551 in the longitudinal direction thereof. It may be arranged to be perpendicular to the longitudinal direction of. Both ends of the support member 560 may be fixed to the patterning slit sheet frame 555.

In addition, the support member 560 may be supported by the second blocking plate 541. 16 is an enlarged view of a portion A of FIG. 15. Referring to FIG. 16, a through hole 543 is formed in the second blocking plate 541. The support member 560 may support the patterning slit sheet 550 through the through hole 543.

As described above, the patterning slit sheet 550 includes a patterning slit 551a, 551b, and 551c corresponding to each deposition space S for the thickness uniformity of the deposited thin film. The smaller the length of the 551a and the longer the patterning slit spaced from the patterning slit 551a, the larger the length of the patterning slits 551b and 551c corresponding to both ends of each deposition space S may be formed. have.

17 is a rear perspective view showing another modification of the patterning slit sheet of the thin film deposition apparatus according to another embodiment of the present invention. Referring to FIG. 15, the patterning slit sheet 560 is the same as the patterning slit sheet 560 shown in FIG. 16 in that the supporting member 560 supports the patterning slit sheet 660, but of the patterning slit sheet on which the supporting member 560 is disposed. No slit is formed in the portion 662. As such, since a slit is not formed in the portion 662 of the patterned slit sheet on which the support member 560 is disposed, a deposition material enters between the support member 560 and the patterned slit sheet 660 to form a film. Can be reduced.

The patterning slit sheet 660 shown in FIG. 17 may be formed such that the slits 661d formed on the other hand about the portion 662 of the patterning slit sheet on which the supporting member 560 is disposed have the same length, and the other The slits 661 formed on the side may have different lengths. That is, the length of the slits 661a disposed at the center of each deposition space S increases from the slits 661b and 661c disposed at both ends of the deposition space S. FIG. As such, the slits may be formed to have different lengths, thereby making it possible to uniformly form the thickness of the deposited thin film as described above.

18 is a perspective view schematically showing a thin film deposition apparatus according to another embodiment of the present invention, FIG. 19 is a schematic side view of the thin film deposition apparatus of FIG. 18, and FIG. 20 is a schematic view of the thin film deposition apparatus of FIG. 18. Top view.

18, 19, and 20, a thin film deposition apparatus 700 according to another embodiment of the present invention includes a deposition source 710, a deposition source nozzle unit 720, and a patterning slit sheet 750. do.

Here, although the chamber is not shown in FIGS. 18, 19, and 20 for convenience of description, all the components of FIGS. 18 to 20 are preferably disposed in a chamber in which an appropriate degree of vacuum is maintained. This is to ensure the straightness of the deposition material.

In detail, in order for the deposition material 715 emitted from the deposition source 710 to pass through the deposition source nozzle portion 720 and the patterning slit sheet 750 to be deposited on the substrate 400 in a desired pattern, a chamber (not shown) is basically used. The inside must maintain the same high vacuum as the FMM deposition method. In addition, the temperature of the patterning slit sheet 750 should be sufficiently lower than the deposition source 710 temperature (about 100 degrees or less). This is because the problem of thermal expansion of the patterned slit sheet 750 due to temperature can be minimized only when the temperature of the patterned slit sheet 750 is sufficiently low.

In such a chamber (not shown), a substrate 400 which is a deposition target is disposed. The substrate 400 may be a substrate for a flat panel display, and a large area substrate such as a mother glass capable of forming a plurality of flat panel displays may be applied.

Here, in one embodiment of the present invention, the substrate 400 is characterized in that the deposition proceeds while moving relative to the thin film deposition apparatus 700.

In detail, in the conventional FMM deposition method, the FMM size should be formed to be the same as the substrate size. Therefore, as the substrate size increases, the FMM needs to be enlarged. As a result, there is a problem that it is not easy to manufacture the FMM, and it is not easy to align the FMM to a precise pattern.

In order to solve such a problem, the thin film deposition apparatus 700 according to an embodiment of the present invention is characterized in that the deposition is performed while the thin film deposition apparatus 700 and the substrate 400 move relative to each other. In other words, the substrate 400 disposed to face the thin film deposition apparatus 700 moves continuously along the Y-axis direction to perform deposition continuously. That is, deposition is performed by scanning while the substrate 400 moves in the direction of arrow A in FIG. 18. Here, although the substrate 400 is shown to be deposited while moving in the Y-axis direction in the chamber (not shown), the spirit of the present invention is not limited thereto, the substrate 400 is fixed and thin film deposition It will also be possible to perform deposition while the device 700 itself moves in the Y-axis direction.

Therefore, in the thin film deposition apparatus 700 of the present invention, the patterning slit sheet 750 can be made much smaller than the conventional FMM. That is, in the case of the thin film deposition apparatus 700 of the present invention, since the substrate 400 moves in the Y-axis direction and performs deposition in a continuous manner, that is, by scanning, the X of the patterning slit sheet 750 The length in the axial direction and the Y-axis direction may be formed to be much smaller than the length of the substrate 400. As such, since the patterned slit sheet 750 can be made much smaller than the conventional FMM, the patterned slit sheet 750 of the present invention is easy to manufacture. That is, in all processes, such as etching of the patterned slit sheet 750, precision tension and welding operations thereafter, movement and cleaning operations, the small sized patterned slit sheet 750 is advantageous over the FMM deposition method. In addition, this becomes more advantageous as the display device becomes larger.

As described above, in order for deposition to occur while the thin film deposition apparatus 700 and the substrate 400 move relative to each other, the thin film deposition apparatus 700 and the substrate 400 may be spaced apart from each other to some extent. This will be described later in detail.

On the other hand, the deposition source 710 in which the deposition material 715 is received and heated is disposed on the side opposite to the substrate 400 in the chamber. As the deposition material 715 stored in the deposition source 710 is vaporized, deposition is performed on the substrate 400.

In detail, the deposition source 710 includes a crucible 711 filled with the deposition material 715 therein and a deposition material 715 filled inside the crucible 711 by heating the crucible 711. One side, in detail, comprises a heater 712 for evaporating to the deposition source nozzle unit 720 side.

The deposition source nozzle unit 720 is disposed on one side of the deposition source 710, in detail, the side of the deposition source 710 facing the substrate 400. In addition, a plurality of deposition source nozzles 721 are formed in the deposition source nozzle unit 720 along the Y-axis direction, that is, the scanning direction of the substrate 400. Here, the plurality of deposition source nozzles 721 may be formed at equal intervals. The deposition material 715 vaporized in the deposition source 710 passes through the deposition source nozzle unit 720 toward the substrate 400, which is the deposition target. As described above, when the plurality of deposition source nozzles 721 are formed on the deposition source nozzle unit 720 along the Y-axis direction, that is, the scanning direction of the substrate 400, each patterning slit of the patterning slit sheet 750 ( The size of the pattern formed by the deposition material passing through 751 is only affected by the size of one deposition source nozzle 721 (ie, there is only one deposition source nozzle 721 in the X-axis direction). Shadows will not occur. In addition, since a plurality of deposition source nozzles 721 are present in the scan direction, even if a flux difference between individual deposition source nozzles occurs, the difference is canceled to obtain an effect of maintaining a uniform deposition uniformity.

Meanwhile, a patterning slit sheet 750 and a frame 755 are further provided between the deposition source 710 and the substrate 400. The frame 755 is formed in the shape of a window frame, and the patterning slit sheet 750 is coupled to the inside thereof. In addition, a plurality of patterning slits 751 are formed in the patterning slit sheet 750 along the X-axis direction. The deposition material 715 vaporized in the deposition source 710 passes through the deposition source nozzle unit 720 and the patterning slit sheet 750 toward the substrate 400, which is the deposition target. In this case, the patterning slit sheet 750 may be manufactured by etching, which is the same method as that of a conventional fine metal mask (FMM), in particular, a stripe type mask. In this case, the total number of patterning slits 751 may be greater than the total number of deposition source nozzles 721.

Meanwhile, the above-described deposition source 710 (and the deposition source nozzle unit 720 coupled thereto) and the patterning slit sheet 750 may be formed to be spaced apart from each other by a certain degree, and the deposition source 710 (and coupled thereto) The deposition source nozzle unit 720 and the patterning slit sheet 750 may be connected to each other by the connection member 735. That is, the deposition source 710, the deposition source nozzle unit 720, and the patterning slit sheet 750 may be connected by the connection member 735 to be integrally formed with each other. The connection members 735 may guide the movement path of the deposition material so that the deposition material discharged through the deposition source nozzle 721 is not dispersed. In the drawing, the connecting member 735 is formed only in the left and right directions of the deposition source 710, the deposition source nozzle unit 720, and the patterning slit sheet 750 to guide only the X-axis direction of the deposition material. For convenience of illustration, the spirit of the present invention is not limited thereto, and the connection member 735 may be formed in a sealed shape in a box shape to simultaneously guide the movement of the deposition material in the X-axis direction and the Y-axis direction.

As described above, the thin film deposition apparatus 700 according to another embodiment of the present invention performs deposition while moving relative to the substrate 400, and thus the thin film deposition apparatus 700 is applied to the substrate 400. The patterned slit sheet 750 is formed to be spaced apart from the substrate 400 to move relative to the substrate 400.

In detail, in the conventional FMM deposition method, a deposition process was performed by closely attaching a mask to a substrate in order to prevent shadows on the substrate. However, when the mask is in close contact with the substrate as described above, there has been a problem that a defect problem occurs due to contact between the substrate and the mask. Also, since the mask cannot be moved relative to the substrate, the mask must be formed to the same size as the substrate. Therefore, as the display device becomes larger, the size of the mask must be increased, but there is a problem that it is not easy to form such a large mask.

In order to solve such a problem, in the thin film deposition apparatus 700 according to another embodiment of the present invention, the patterning slit sheet 750 is disposed to be spaced apart from the substrate 400 which is the deposition target by a predetermined interval.

According to the present invention, after forming the mask smaller than the substrate, it is possible to perform the deposition while moving the mask with respect to the substrate, it is possible to obtain the effect that the mask fabrication becomes easy. Moreover, the effect which prevents the defect by the contact between a board | substrate and a mask can be acquired. In addition, since the time for bringing the substrate into close contact with the mask is unnecessary in the step, an effect of increasing the manufacturing speed can be obtained.

FIG. 21 is a diagram illustrating a patterning slit sheet 750 of the thin film deposition apparatus illustrated in FIG. 18. Referring to FIG. 21, the length of the patterning slit 751a at the center of the patterning slit sheet 750 is greater than the length of the patterning slits 751b at both ends of the patterning slit sheet 750 in order to secure the film uniformity of the entire substrate. It is formed short. Organic matter emission is a portion perpendicular to the deposition source nozzle (see 721 of FIG. 18) according to a cosine law, and the most organic matter is emitted, and the amount of organic matter emitted toward both ends of the patterning slit sheet 750 decreases. do. Therefore, in the case of the thin film deposition apparatus in which the length of the patterning slit 751 is formed to be the same, the deposition film is formed so that the center portion is convex.

In order to eliminate such unevenness of the deposited film thickness, the length of the patterning slit 751a of the center portion of the patterning slit sheet 750 as shown in FIG. 21 has a patterning slit 751b at both ends of the patterning slit sheet 750. It is formed shorter than the length. That is, the length of the patterning slit 751a of the center portion of the patterning slit sheet 750 is formed shortest, and the length of the patterning slits 751b of both ends of the patterning slit sheet 750 is formed longest. The patterning slit sheet 750 having such a different length serves to block some of the deposition material moving from the deposition source nozzle (see 721 of FIG. 18) to the patterning slit (see 751 of FIG. 18).

That is, since the deposited film deposited by the thin film deposition apparatus has a convex shape in the center part, in order to make it uniform, some of the deposition material directed to the center part must be blocked. Therefore, since the length of the patterning slit 751a is shorter than that of both ends of the patterning slit sheet 750, the center of the patterning slit sheet 750 collides more with the deposition material, thereby blocking more deposition material. In the edge portion, the less deposited material collides with the less deposited material.

As such, by forming the length of the patterning slit 751 differently in the movement path of the deposition material, the deposition film deposited by the thin film deposition apparatus may be corrected. That is, the portion where the deposition material is deposited to block the deposition material by shortening the length of the patterning slit 751a, and the portion where the deposition material is deposited to block the deposition material by lengthening the length of the patterning slit 751b. This is to correct the deposition amount so that the thickness of the entire deposition material is uniform.

According to the present invention, since the uniformity of the thin film deposited on the substrate is uniformly formed within an error range of 1 to 2%, an effect of improving product quality and reliability can be obtained.

22 is a view showing a patterning slit sheet 850 of a thin film deposition apparatus according to another embodiment of the present invention. This embodiment is distinguished from the above-described embodiment 700 in that a correction plate 857 is further provided on one side of the patterning slit sheet 850.

In detail, the thin film deposition apparatus according to another embodiment of the present invention may further include a compensation plate 857 to secure the film uniformity of the entire substrate. Organic emission is a portion perpendicular to the evaporation source nozzle (see 721 of FIG. 18) according to a cosine law, and the most organic matter is emitted, and the amount of organic matter emitted toward both ends of the patterning slit sheet 850 decreases. do. Therefore, in the case of the thin film deposition apparatus without the correction plate, the deposition film is formed so that the center portion is convex.

In order to eliminate such unevenness of the thickness of the deposited film, a compensation plate 857 as illustrated in FIG. 22 may be provided on one side of the patterning slit sheet 850. The compensating plate 857 is disposed in a substantially arc or cosine curve shape on one surface of the patterning slit sheet 850. The compensation plate 857 serves to block some of the deposition material moving from the deposition source nozzle (see 721 of FIG. 18) toward the patterning slit (see 751 of FIG. 18).

That is, since the deposited film deposited by the thin film deposition apparatus has a convex shape in the center part, in order to make it uniform, some of the deposition material directed to the center part must be blocked. Thus, a calibration plate 857 is placed in the middle of the path of deposition material to block some of the deposition material. At this time, since the compensation plate 857 is formed in a circular arc to cosine curve shape, the deposition material collides a lot in the center portion which is relatively protruded to block more deposition material, and the deposition material collides less at the edge portion. Less barrier to deposition material. In this case, the correction plate 857 can be formed so that the film thickness of the thinnest part, generally, both ends of the patterning slit sheet 850 becomes the entire film thickness.

As such, by arranging the correction plate in the movement path of the deposition material, the deposition film deposited by the thin film deposition apparatus may be corrected. That is, the portion of the deposition material is deposited a lot of the deposition plate to increase the height of the compensation plate to block the deposition material, the portion of the deposition material is deposited by reducing the height of the compensation plate to reduce the deposition material by reducing the thickness of the overall deposition material, The deposition amount is corrected to be uniform.

According to the present invention, since the uniformity of the thin film deposited on the substrate is uniformly formed within an error range of 1 to 2%, an effect of improving product quality and reliability can be obtained.

Fig. 23 is a rear perspective view showing a patterning slit sheet of a thin film deposition apparatus according to still another embodiment of the present invention. Referring to FIG. 23, the back surface of the patterning slit sheet 750 may include a support member 760 supporting the patterning slit sheet 750. The support member 160 may be disposed on the rear surface of the patterned slit sheet 750 to prevent the patterned slit sheet 750 from sagging toward the deposition source (see 710 of FIG. 18). The support member 760 may have a rod shape. The support member 760 may be disposed on the rear surface of the patterning slit sheet 750 to intersect the longitudinal direction of the patterning slit 751, and in one embodiment, the support member 760 has a longitudinal direction of the patterning slit 751. It may be arranged to be perpendicular to the longitudinal direction of. Both ends of the support member 760 may be fixed to the patterning slit sheet frame 755.

24 is a view showing a thin film deposition apparatus according to another embodiment of the present invention. Referring to the drawings, a thin film deposition apparatus according to another embodiment of the present invention includes a deposition source 910, a deposition source nozzle unit 920, and a patterning slit sheet 950. Here, the deposition source 910 may be a crucible 911 filled with a deposition material 915 therein, and a deposition source 915 filled with a crucible 911 by heating the crucible 911. A heater 912 for evaporating to the side of 920. Meanwhile, a deposition source nozzle unit 920 is disposed on one side of the deposition source 910, and a plurality of deposition source nozzles 921 are formed in the deposition source nozzle unit 920 along the Y-axis direction. Meanwhile, a patterning slit sheet 950 and a frame 955 are further provided between the deposition source 910 and the substrate 400, and the patterning slit sheet 950 includes a plurality of patterning slits 951 along the X-axis direction. Is formed. In addition, the deposition source 910, the deposition source nozzle unit 920, and the patterning slit sheet 950 are coupled by the connection member 935.

In the present embodiment, the plurality of deposition source nozzles 921 formed in the deposition source nozzle unit 920 are distinguished from the above-described first embodiment in that they are arranged at a predetermined angle. In detail, the deposition source nozzles 921 may be formed of two rows of deposition source nozzles 921a and 921b, and the two rows of deposition source nozzles 921a and 921b are alternately disposed. In this case, the deposition source nozzles 921a and 921b may be tilted to be inclined at a predetermined angle on the XZ plane.

In the case where the length of the patterning slit (751 in FIG. 21) shown in FIG. 21 is differentiated or the correction plate shown in FIG. 22 is provided (see 857 in FIG. 22), the deposition material is formed by the correction plate or the patterning slit. Since it is blocked, the utilization efficiency of the material can be reduced. Therefore, in this embodiment, the deposition source nozzles 921a and 921b are tilted and disposed at a predetermined angle. Here, the deposition source nozzles 921a of the first row are tilted to face the deposition source nozzles 921b of the second row, and the deposition source nozzles 921b of the second row are tilted to face the deposition source nozzles 921a of the first row. Can be. In other words, the deposition source nozzles 921a disposed in the left column face the right end of the patterning slit sheet 950, and the deposition source nozzles 921b disposed in the right column move the left end of the patterning slit sheet 950. It can be arranged to look at.

FIG. 25 is a view schematically illustrating a distribution form of a deposition film deposited on a substrate when the deposition source nozzle is not tilted in the thin film deposition apparatus according to the present invention, and FIG. 26 illustrates a deposition source nozzle in the thin film deposition apparatus according to the present invention. It is a figure which shows the distribution form of the vapor deposition film deposited on a board | substrate when tilting. Comparing FIG. 25 with FIG. 26, it can be seen that when the deposition source nozzle is tilted, the thickness of the deposition film deposited on both ends of the substrate is relatively increased, thereby increasing the uniformity of the deposition film.

By such a configuration, the difference in film thickness at the center and the end of the substrate is reduced, so that the deposition amount can be controlled so that the thickness of the entire deposition material is uniform, and further, the material utilization efficiency can be increased. .

The present invention is not limited by the above-described embodiment and the accompanying drawings, but is intended to be limited by the appended claims, and various forms of substitution, modification, and within the scope not departing from the technical spirit of the present invention described in the claims. It will be apparent to those skilled in the art that changes are possible.

100: thin film deposition apparatus 110: deposition source
120: deposition source nozzle unit 130: blocking plate assembly
131: blocking plate 132: blocking plate frame
150: patterning slit sheet 155: patterning slit sheet frame
400: substrate

Claims (42)

In the thin film deposition apparatus for forming a thin film on a substrate,
A deposition source for emitting a deposition material;
A deposition source nozzle unit disposed on one side of the deposition source and having a plurality of deposition source nozzles formed along a first direction;
A patterning slit sheet disposed to face the deposition source and having a plurality of patterning slits formed along the first direction; And
A plurality of blocking plates disposed in the first direction between the deposition source nozzle part and the patterning slit sheet and partitioning a space between the deposition source nozzle part and the patterning slit sheet into a plurality of deposition spaces; A blocking plate assembly;
The patterning slits corresponding to the respective deposition spaces are formed to have different lengths,
The thin film deposition apparatus is formed to be spaced apart from the substrate by a predetermined degree,
The thin film deposition apparatus and the substrate, the thin film deposition apparatus, characterized in that any one side is formed to be relatively movable relative to the other side. The method of claim 1,
The patterning slits are thin film deposition apparatus characterized in that the length is formed longer as the distance from the center of each deposition space. The method of claim 1,
The length of the patterning slits corresponding to the center of each deposition space is formed thinner than the length of the patterning slits corresponding to the end of each deposition space. The method of claim 1,
And a support member supporting the patterning slit sheet to prevent the patterning slit sheet from sagging toward the deposition source. The method of claim 4, wherein
And the support member is disposed to intersect the longitudinal direction of the patterning slit. The method of claim 5,
And the support member is disposed to be perpendicular to the longitudinal direction of the patterning slit. The method of claim 1,
And a compensation plate disposed between the deposition source nozzle unit and the patterning slit sheet to block at least a portion of the deposition material radiated from the deposition source. The method of claim 7, wherein
The correction plate is a thin film deposition apparatus, characterized in that the thickness of the thin film is provided to be formed substantially the same. The method of claim 7, wherein
The correction plate is a thin film deposition apparatus, characterized in that the lower the height is formed from the center of each deposition space. 10. The method of claim 9,
The correction plate is a thin film deposition apparatus, characterized in that formed in the shape of an arc or cosine curve. The method of claim 7, wherein
The correction plate is a thin film deposition apparatus, characterized in that the height at the center of each deposition space is formed lower than the height at the end of each deposition space. The method of claim 7, wherein
And the compensation plate is formed such that the blocking amount of the deposition material at the center of each deposition space is greater than the blocking amount of the deposition material at the end of each deposition space. The method of claim 7, wherein
And the compensation plates are formed between the blocking plates adjacent to each other. The method of claim 7, wherein
The correction plate is formed for each deposition space,
The thin film deposition apparatus of claim 1, wherein the size or shape of each of the compensation plates may be changed according to characteristics of the deposition material radiated from the deposition source nozzles disposed in the deposition spaces. The method of claim 14,
The thin film deposition apparatus, characterized in that the size or shape of each of the compensation plates can be changed so that the thickness of the thin film deposited for each of the plurality of deposition spaces is the same. The method of claim 1,
Each of the plurality of blocking plates is formed in a second direction substantially perpendicular to the first direction to divide the space between the deposition source nozzle unit and the patterning slit sheet into a plurality of deposition spaces. Thin film deposition apparatus. The method of claim 1,
Thin film deposition apparatus, characterized in that the plurality of blocking plates are arranged at equal intervals. The method of claim 1,
And the blocking plates and the patterning slit sheet are formed to be spaced apart at a predetermined interval. The method of claim 1,
The blocking plate assembly may include a first blocking plate assembly including a plurality of first blocking plates and a second blocking plate assembly including a plurality of second blocking plates. The method of claim 19,
Each of the plurality of first blocking plates and the plurality of second blocking plates is formed in a second direction substantially perpendicular to the first direction, thereby providing a plurality of spaces between the deposition source nozzle part and the patterning slit sheet. Thin film deposition apparatus characterized by partitioning into two deposition spaces. The method of claim 19,
The thin film deposition apparatus of claim 1, wherein each of the plurality of first blocking plates and the plurality of second blocking plates is disposed to correspond to each other. The method of claim 21,
The thin film deposition apparatus of claim 1, wherein the first blocking plate and the second blocking plate corresponding to each other are disposed on substantially the same plane. In the thin film deposition apparatus for forming a thin film on a substrate,
A deposition source for emitting a deposition material;
A deposition source nozzle unit disposed on one side of the deposition source and having a plurality of deposition source nozzles formed along a first direction; And
A patterning slit sheet disposed to face the deposition source nozzle unit and having a plurality of patterning slits formed along a second direction perpendicular to the first direction,
The plurality of patterning slits are formed to have different lengths from each other,
Deposition is performed while the substrate moves along the first direction with respect to the thin film deposition apparatus,
And the deposition source, the deposition source nozzle unit, and the patterning slit sheet are integrally formed. The method of claim 23, wherein
The plurality of patterning slits are thin film deposition apparatus, characterized in that provided so that the thickness of the deposited thin film is formed to be substantially the same. The method of claim 23, wherein
The deposition amount of the deposition material deposited on the substrate is controlled by the length of each patterning slit. The method of claim 23, wherein
And the length of the patterning slit in the center portion of the patterning slit sheet is shorter than the length of the patterning slit at both ends of the patterning slit sheet. The method of claim 23, wherein
And the deposition source nozzle unit and the patterning slit sheet are integrally formed by a coupling member. The method of claim 27,
The connecting member is a thin film deposition apparatus, characterized in that for guiding the movement path of the deposition material. The method of claim 27,
And the connection member is formed to seal a space between the deposition source and the deposition source nozzle unit and the patterning slit sheet from the outside. The method of claim 23, wherein
The thin film deposition apparatus is formed to be spaced apart from the substrate by a predetermined degree. The method of claim 23, wherein
And the deposition material is continuously deposited on the substrate while the substrate moves in the first direction with respect to the thin film deposition apparatus. The method of claim 23, wherein
And the patterning slit sheet of the thin film deposition apparatus is smaller than the substrate. The method of claim 23, wherein
And a support member supporting the patterning slit sheet to prevent the patterning slit sheet from sagging toward the deposition source. The method of claim 33, wherein
And the support member is disposed to intersect the longitudinal direction of the patterning slit. The method of claim 34, wherein
And the support member is disposed to be perpendicular to the longitudinal direction of the patterning slit. In the thin film deposition apparatus for forming a thin film on a substrate,
A deposition source for emitting a deposition material;
A deposition source nozzle unit disposed on one side of the deposition source and having a plurality of deposition source nozzles formed along a first direction;
A patterning slit sheet disposed to face the deposition source nozzle unit and having a plurality of patterning slits formed along a second direction perpendicular to the first direction; And
And a correction plate disposed between the deposition source nozzle unit and the patterning slit sheet to block at least a portion of the deposition material radiated from the deposition source.
Deposition is performed while the substrate moves along the first direction with respect to the thin film deposition apparatus,
And the deposition source, the deposition source nozzle unit, and the patterning slit sheet are integrally formed. The method of claim 36,
The correction plate is a thin film deposition apparatus, characterized in that provided so that the thickness of the deposited thin film is substantially the same. The method of claim 36,
The correction plate is a thin film deposition apparatus, characterized in that the lower the height is formed from the center of the patterned slit sheet. The method of claim 38,
The correction plate is a thin film deposition apparatus, characterized in that formed in the shape of an arc or cosine curve. The method of claim 37,
And the correction plate is formed such that the blocking amount of the deposition material at the center of the patterning slit sheet is greater than the blocking amount of the deposition material at the end of the patterning slit sheet. In the method of manufacturing an organic light emitting display device using a thin film deposition apparatus for forming a thin film on a substrate,
Disposing the substrate to a predetermined distance from the thin film deposition apparatus; And
And depositing a deposition material radiated from the thin film deposition apparatus on the substrate while one side of the thin film deposition apparatus and the substrate is moved relative to the other side. The method of claim 41, wherein
Depositing the deposition material on the substrate,
And the deposition material radiated from the thin film deposition apparatus is continuously deposited on the substrate while the substrate is moved relative to the thin film deposition apparatus.

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