KR20110020613A - Organic electro luminescent device - Google Patents

Abstract

PURPOSE: An organic electro luminescent device is provided to prevent a frit-pattern from being exfoliated by including an impact absorbing pattern made of a polymer with high elastic property. CONSTITUTION: In an organic electro luminescent device, a first metal pattern(138) is formed in a non-display area(NA) of a first substrate(110). An impact absorbing pattern(124) is completely overlapped with the first metal pattern. A frit pattern(161) consisting of frits is formed on the first metal pattern. A reinforcing pattern(165) is formed at the outside of the frit pattern, the first metal pattern, and the impact absorbing pattern. . The reinforcing pattern is contacted with the interior of first and second substrates respectively.

Description

Organic electroluminescent device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent device, and more particularly, to an organic electroluminescent device capable of reducing the peeling phenomenon due to physical external impact.

The organic light emitting diode, which is one of the flat panel displays (FPDs), has high luminance and low operating voltage characteristics. In addition, the self-luminous self-illuminating type provides high contrast ratio, enables ultra-thin display, easy response time with several microsecond response time, no restriction on viewing angle, and stable at low temperatures. Since it is driven at a low voltage of 5 to 15V DC, it is easy to manufacture and design a driving circuit.

In addition, the manufacturing process of the organic light emitting device is very simple because the deposition (deposition) and encapsulation (encapsulation) equipment is all.

The organic light emitting diode having such characteristics is largely divided into a passive matrix type and an active matrix type. In the passive matrix method, since the scan lines and the signal lines cross each other to form a device in a matrix form, each pixel Since the scan lines are sequentially driven over time in order to drive, the instantaneous luminance must be equal to the average luminance multiplied by the number of lines in order to represent the required average luminance.

However, in the active matrix method, a thin film transistor, which is a switching element for turning on / off a pixel area, is positioned for each pixel area, and the first electrode connected to the switching thin film transistor is a pixel area unit. The second electrode turned on / off and facing the first electrode becomes a common electrode.

In the active matrix method, the voltage applied to the pixel region is charged in the storage capacitor StgC, and the power is applied until the next frame signal is applied, thereby allowing one screen regardless of the number of scan lines. Continue to run. Therefore, since low luminance, high definition, and large size can be obtained even when a low current is applied, an active matrix type organic light emitting diode is mainly used in recent years.

Hereinafter, the basic structure and operation characteristics of the active matrix organic light emitting display device will be described in detail with reference to the accompanying drawings.

1 is a circuit diagram of one pixel of a typical active matrix organic electroluminescent device.

As illustrated, one pixel of the active matrix organic light emitting diode includes a switching thin film transistor STr, a driving thin film transistor DTr, a storage capacitor StgC, and an organic light emitting diode E.

A gate line GL is formed in a first direction, is arranged in a second direction crossing the first direction to define a pixel region P, and a data line DL is formed. And a power supply wiring (PL) for applying a power supply voltage is spaced apart.

In addition, a switching thin film transistor STr is formed at a portion where the data line DL and the gate wiring GL cross each other, and are electrically connected to the switching thin film transistor STr inside each pixel region P. FIG. The driving thin film transistor DTr is formed.

In this case, the driving thin film transistor DTr is electrically connected to the organic light emitting diode E. That is, the first electrode, which is one terminal of the organic light emitting diode E, is connected to the drain electrode of the driving thin film transistor DTr, and the second electrode, which is the other terminal, is connected to the power supply line PL. In this case, the power line PL transfers a power supply voltage to the organic light emitting diode E. In addition, a storage capacitor StgC is formed between the gate electrode and the source electrode of the driving thin film transistor DTr.

Therefore, when a signal is applied through the gate line GL, the switching thin film transistor STr is turned on, and the signal of the data line DL is transferred to the gate electrode of the driving thin film transistor DTr to drive the driving signal. Since the thin film transistor DTr is turned on, light is output through the organic light emitting diode E. At this time, when the driving thin film transistor DTr is in an on state, the level of the current flowing from the power supply line PL to the organic light emitting diode E is determined, and thus the organic light emitting diode E is The gray scale may be implemented, and the storage capacitor StgC maintains the gate voltage of the driving thin film transistor DTr constant when the switching thin film transistor STr is turned off. As a result, even when the switching thin film transistor STr is turned off, the level of the current flowing through the organic light emitting diode E may be maintained until the next frame.

On the other hand, Figure 2 is a schematic cross-sectional view of a conventional organic EL device.

As shown in the drawing, in the conventional organic light emitting device 1, the first and second substrates 10 and 70 are disposed to face each other.

In the first substrate 10, a display area AA and a non-display area NA are defined outside the display area AA, and gate lines (not shown) and data are defined in the display area AA. A plurality of pixel regions P defined as regions captured by wirings (not shown) are provided, and power wirings (not shown) are provided in parallel with the data wirings (not shown). Each of the pixel regions P includes a switching and driving thin film transistor (DTr), is connected to the driving thin film transistor DTr, and has a first electrode 47 formed thereon.

In addition, an organic emission layer 55 including light emitting material patterns 55a, 55b, and 55c emitting red, green, and blue colors is formed on the first electrode 47. The second electrode 58 is formed on the entire surface of the organic emission layer 55.

A seal pattern 80 is formed on the non-display area NA outside the display area AA of the two substrates 10 and 70, bordering the display area AA. At this time, the two substrates 10 and 70 in an inert gas or vacuum atmosphere in a state where the seal pattern 80 is formed on the edge of the inner region between the two substrates 10 and 70 so as not to be exposed to moisture and air. ) Is held in a panel state.

At this time, the seal pattern 80 is typically made of a sealant (sealant) made of an organic or polymer material, the sealant (sealant) is due to its internal molecular structure properties of the molecules between the molecules can be sufficiently moved water molecules It becomes the size that there is. Therefore, as time passes, external moisture penetrates the seal pattern 80 to penetrate the inside, thereby adversely affecting the organic light emitting layer (not shown), thereby causing a problem of shortening the lifespan.

Therefore, in order to solve such a problem, an organic light emitting diode comprising a frit pattern made of frit whose main component is an inorganic material instead of a seal pattern made of a sealant made of organic or polymer material has recently been developed. Proposed.

3 is a schematic cross-sectional view of an organic light emitting diode having a conventional frit pattern. The same components are given the same hibernating code as in FIG.

As illustrated, a frit pattern 82 is formed between the first substrate 10 and the second substrate 70 in the non-display area NA.

Since the frit pattern 82 is made of a glass material that constitutes the first and second substrates 10 and 70 itself, the frit pattern 82 has excellent adhesion to the first and second substrates 10 and 70 and its material. By their nature, the voids are smaller than water molecules. Therefore, since it is much superior to the seal pattern of the sealant material in terms of preventing the penetration of moisture from the outside, it is possible to extend the life of the organic light emitting device by preventing degradation due to moisture infiltration.

In this case, the frit pattern 82 is not directly formed on the inner surface of the first substrate 10 in the first substrate 10, and the metal pattern 81 is provided under the frit pattern 82. have. The metal pattern 81 is disposed below the frit pattern 82 in the first substrate 10 to prevent defects that may occur during the firing process of the frit pattern 82.

That is, the firing process of the frit pattern 82 is performed by irradiating a laser beam, and the irradiated laser beam may be irradiated to the outside without irradiating only the portion where the frit pattern 82 is formed due to an error in the laser beam irradiation. In this case, the laser beam has a very large energy, and the laser beam affects the driving and switching thin film transistor DTr (not shown) and the organic light emitting layer 55 provided in the display area AA. It may cause a decrease and a decrease in luminous efficiency of the organic light emitting layer 55.

Therefore, the source of the driving and switching thin film transistors DTr (not shown) configured in the display area AA to reflect the laser beam irradiated to the outside of the frit pattern 82 to prevent adverse effects on components in the display area. And the same metal material that forms the source and drain electrodes (not shown) together when forming a drain electrode (not shown), for example, molybdenum (Mo) to have a width wider than the width of the frit pattern 82. The pattern 82 is formed.

However, since the frit pattern 82 is formed on the metal pattern 81, the phenomenon in which the frit pattern 82 is peeled off due to an external impact occurs frequently.

That is, the elastic modulus of the metal pattern 81 made of molybdenum (Mo) more precisely is about 0.19 gPa, and the elastic modulus is very small so that the elastic property is hardly expressed when an external shock is applied. As a result, peeling of the frit pattern 82 occurs easily.

The present invention has been made to solve the above problems, even if the frit pattern is formed on the upper metal pattern to have a configuration that can absorb the impact from the outside can reduce the defect easily peeled off by the external impact An object of the present invention is to provide an organic light emitting device.

In order to achieve the above object, an organic electroluminescent device according to an embodiment of the present invention, a display area including a plurality of pixel areas and a first substrate having a non-display area defined outside thereof, facing the An organic light emitting device comprising a second substrate, a driving thin film transistor and an organic light emitting diode in each pixel area, wherein the first metal pattern has a first width in the non-display area of the first substrate. and; An impact mitigating pattern formed between the first substrate and the lower portion of the first metal pattern, the material having an elastic modulus of 15 gPa to 25 gPa, having a width smaller than the first width and completely overlapping the first metal pattern; A frit pattern in contact with the upper surface of the first metal pattern and simultaneously in contact with the second substrate, bordering the display area, and having a width smaller than the first width and completely overlapping the first metal pattern; And the frit pattern is baked and cured by laser beam irradiation, and the first metal pattern reflects the laser beam to prevent heat transfer to a display area.

  In this case, the material having an elastic modulus of 15 gPa to 25 gPa is preferably polyimide, which is a polymer material.

 In addition, the impact mitigating pattern has the same shape as the frit pattern is formed without a break in the non-display area, or has a form of a gap spaced apart at regular intervals in the longitudinal direction in which the first width direction or the frit pattern extends. It is characterized by having.

In addition, the driving thin film transistor and the switching thin film transistor may each include a semiconductor structure of a polysilicon semiconductor layer, a gate insulating film, a gate electrode, an interlayer insulating film having a contact hole, and the semiconductor layer through the contact hole. It is a top gate type by forming a source and drain electrode in contact with a layer and spaced apart from each other, or a gate electrode, a gate insulating film, and an ohmic contact layer of impurity amorphous silicon spaced from each other with an active layer of pure amorphous silicon. The bottom gate type is characterized by forming the semiconductor layer and the source and drain electrodes spaced apart from each other. The first metal pattern may be formed of the same metal material forming the source and drain electrodes. When the driving and switching thin film transistor is a top gate type, an interlayer insulating film, a gate insulating film, and the top may be disposed below the impact relaxation pattern. A second metal pattern made of the same metal material as the gate electrode of the gate type driving and switching thin film transistor is provided. When the driving and switching thin film transistor is a bottom gate type, a gate insulating layer and the bottom gate type driving are disposed below the impact relaxation pattern. And a second metal pattern made of the same metal material as that of the gate electrode of the switching thin film transistor.

In addition, a plurality of gate wires connected to the gate electrodes of the switching thin film transistors and a plurality of data wires connected to the source electrodes of the switching thin film transistors and intersect each of the plurality of gate wires to define the plurality of pixel areas. do.

In addition, the outer surface of the frit pattern is characterized in that the reinforcement pattern is formed in contact with the outer surface and at the same time in contact with the inner surface of each of the first and second substrates, wherein the reinforcement pattern has an elastic modulus of 5gPa to 15gPa It is preferably made of a urethane or acrylic material of the degree.

The organic light emitting device according to the present invention absorbs the shock internally when an impact from the outside occurs by providing a shock-absorbing pattern as a polymer material having excellent elastic properties under the metal pattern provided in the non-display area of the first substrate. Therefore, there is an effect of minimizing the defect that the frit pattern is separated from the first substrate.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

4 is a cross-sectional view of a partial region including a non-display area of an organic light emitting diode according to an exemplary embodiment of the present invention. An area in which the driving thin film transistor is formed in each pixel area P in the display area AA is defined as a driving area DA and an area in which the switching thin film transistor is formed as a switching area (not shown).

As illustrated, the organic light emitting diode 101 according to an exemplary embodiment of the present invention defines a display area AA and a non-display area NA around the display area AA, and the display area ( The first substrate 110 includes a plurality of pixel areas P in AA, and a driving and switching thin film transistor DTr (not shown) and an organic light emitting diode E in each pixel area P. In response to this, the second substrate 170 for encapsulation is disposed to face each other.

In the first substrate 110, a gate and a data line 121 (not shown) are formed in the display area AA and intersect each other at a boundary of each pixel area P. The gate line 121 or Power supply wirings (not shown) are formed in parallel with data wirings (not shown).

In addition, switching and driving thin film transistors (DTr) are formed in each of the plurality of pixel regions P, are connected to the drain electrode 136 of the driving thin film transistor DTr, and the first electrode 147 is Formed. In addition, an organic emission layer 155 including an organic emission pattern (not shown) emitting red, green, and blue colors is formed on the first electrode 147. The second electrode 158 is formed on the entire surface of the display area AA on the organic emission layer 155. In this case, the first electrode 147, the organic emission layer 155, and the second electrode 158 form an organic light emitting diode (E).

 In addition, a second substrate 170 for encapsulation is provided corresponding to the first substrate 110 having the above-described configuration, and non-display outside the display area AA of the two substrates 110 and 170 is provided. In the area NA, a frit pattern 161 formed around the display area AA and formed of a frit is provided. In this case, a metal pattern (second metal pattern) 138 is provided below the frit pattern 161 of the first substrate 110. Accordingly, the frit pattern 161 contacts the metal pattern (second metal pattern) 138 on the first substrate 110, and the second substrate 170 on the second substrate 170. It is formed in direct contact with the inner surface.

Meanwhile, in the non-display region NA of the first substrate 110, the elastic modulus may be in the range of about 15 gPa to about 25 gPa below the metal pattern (second metal pattern) 138. An impact relaxation pattern 124 made of a polymer material having polyimide, for example, is provided.

In addition, the outside of the frit pattern 161, the metal pattern (second metal pattern) 138, and the impact relaxation pattern 124 may correspond to inner surfaces of the first substrate 110 and the second substrate 170, respectively. Another feature is that the reinforcement pattern 165 is further provided as a urethane or acrylic material having a modulus of elasticity of about 5 gPa to about 15 gPa in direct contact with the outside of the frit pattern 161.

In more detail, the configuration of the organic light emitting diode according to the embodiment of the present invention will be described.

As shown, the organic light emitting diode 101 according to an embodiment of the present invention includes a first substrate 110 having a driving and switching thin film transistor DTr (not shown) and an organic light emitting diode E; The display area AA is surrounded by a second substrate 170 for encapsulating the organic light emitting diode E and a non-display area NA of the first and second substrates 110 and 170. The frit pattern 161 and the reinforcement pattern 165 are formed, and the metal pattern (second metal pattern) 138 corresponds to a portion where the frit pattern 161 is formed on the first substrate 110. And a shock absorbing pattern 124 is further provided.

Each pixel area P in the display area AA of the first substrate 110 is formed of pure polysilicon corresponding to the driving area DA and the switching area (not shown), and a center part thereof is a channel. The semiconductor layer 113 including the first region 113a and the second region 113b doped with a high concentration of impurities are formed on both sides of the first region 113a. In this case, a buffer layer (not shown) made of an inorganic insulating material, for example, silicon oxide (SiO ₂ ) or silicon nitride (SiNx) may be further provided between the semiconductor layer 113 and the first substrate 110. have. The buffer layer (not shown) is for preventing the deterioration of the characteristics of the semiconductor layer 113 due to the release of alkali ions from the inside of the insulating substrate 110 during crystallization of the semiconductor layer 113.

In addition, a gate insulating layer 116 is formed on the entire surface of the first substrate 110 to cover the semiconductor layer 113. A gate electrode 120 is formed on the gate insulating layer 116 to correspond to the first region 113a of the semiconductor layer 113 in the driving region DA and the switching region (not shown). In addition, a gate wiring 121 is formed on the gate insulating layer 116 and is connected to a gate electrode (not shown) formed in the switching region (not shown) and extends in one direction. In this case, the gate electrode 120 and the gate wiring 121 may be formed of a first metal material having low resistance, for example, aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, and molybdenum (Mo). ), May be formed of any one of the molybdenum (MoTi) may have a single layer structure, or may have a double layer or triple layer structure as two or more metal materials.

In the non-display area NA, the first metal pattern 122 is formed of the same metal material on which the gate line 121 and the gate electrode 120 are formed on the gate insulating layer 116 formed on the front surface. have. In this case, the first metal pattern 122 may be omitted. In this case, in the drawing, the first metal pattern 122 is formed as an example.

An interlayer insulating film 123 is formed on the gate electrode 120 and the gate wiring 121 in the display area AA. In this case, the interlayer insulating film 123 is formed in the non-display area. The pattern 122 is extended to the upper portion.

In this case, in the display area AA, a semiconductor layer contact exposing each of the second regions 113b located on both sides of the first region 113a to the interlayer insulating layer 123 and the gate insulating layer 116 thereunder. The hole 125 is provided.

Next, an upper portion of the interlayer insulating layer 123 including the semiconductor layer contact hole 125 intersects with the gate wiring 121 in the display area AA and connects the long axis of the pixel area P. And extend the second metal material such as aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum (Mo), molybdenum (MoTi), chromium (Cr), titanium (Ti) Data wirings (not shown) made of one or more materials and power wirings (not shown) are formed apart from each other. In this case, the power line (not shown) may be formed spaced apart from the gate line 121 on the layer where the gate line 121 is formed.

In addition, in the display area AA, each of the driving area DA and the switching area (not shown) are spaced apart from each other on the interlayer insulating layer 123 and exposed through the semiconductor layer contact hole 125. Source and drain electrodes 133 and 136 formed in contact with 113b) and made of the same material as the data line (not shown) are formed. In this case, the semiconductor layer 113 includes the source and drain electrodes 133 and 136 formed in the driving region DA, and the second region 113b contacting the two electrodes 133 and 136, respectively. The gate insulating layer 116 and the gate electrode 120 formed on the semiconductor layer 113 form a driving thin film transistor DTr. In the drawing, the data line (not shown) and the source and drain electrodes 133 and 136 all have a single layer structure, but these components may have a double layer or triple layer structure.

In this case, although not shown in the figure, a switching thin film transistor (not shown) having the same structure as the driving thin film transistor DTr is also formed in the switching region (not shown). In this case, the switching thin film transistor (not shown) is electrically connected to the driving thin film transistor DTr, the gate line 121, and the data line (not shown).

Meanwhile, in the exemplary embodiment of the present invention, the driving thin film transistor DTr and the switching thin film transistor (not shown) have a semiconductor layer 113 of polysilicon and have a top gate type. It is apparent that the driving and switching thin film transistor DTr (not shown) may be configured as a bottom gate type having a semiconductor layer of amorphous silicon. When the driving and switching thin film transistor is configured as a bottom gate type, the stacked structure is spaced apart from the active layer of the gate electrode / gate insulating film / pure amorphous silicon and spaced apart from the semiconductor layer made of an ohmic contact layer of impurity amorphous silicon. It is made of a source and a drain electrode. In this case, the gate line is connected to the gate electrode of the switching thin film transistor on the layer where the gate electrode is formed, and the data line is formed to be connected to the source electrode on the layer where the source electrode of the switching thin film transistor is formed.

Meanwhile, in the non-display area NA, the impact relaxation pattern 124 is formed of a polymer material having a modulus of elasticity of about 15 gPa to about 25 gPa, for example, polyimide, on the interlayer insulating layer 123. It is formed. In addition, the impact relief pattern 124 having the first width may be formed of the same metal material forming the source and drain electrodes 133 and 136 and may have the same stacked shape as the source and drain electrodes 133 and 136. The second metal pattern 138 is formed by forming a single layer, a double layer, or a triple layer structure (shown as an example having a single layer structure in the drawing).

Meanwhile, in the drawing according to the exemplary embodiment, the impact mitigation pattern 124 has a first width in the non-display area NA in which the frit pattern 161 is formed and is formed in the first width direction without interruption. Referring to FIG. 6 (denoted by the same reference numerals for the same components as in FIG. 5), which is a cross-sectional view of an organic light emitting diode according to a modified example of the embodiment of the present invention, the impact mitigating pattern 124 may include the first pattern. It can be seen that it is formed to have a plurality of convex portions in the width direction spaced apart.

In this case, the shock alleviation pattern 124 may be variously modified.

Although not shown in the drawings as another modified example, there are no breaks in the first width direction, but a plurality of patterns having a break in the longitudinal direction in which the frit pattern 161 extends are spaced at regular intervals. It may be configured to have a disposed form.

The impact relaxation pattern 124 having the shape described above and formed under the second metal pattern 138 has an elastic modulus of about 75 times that of molybdenum (Mo), which is one of the metal materials forming the second metal pattern 138. The frit pattern 161 by absorbing the impact applied to the frit pattern 161 when the organic electroluminescent device 101 is impacted from the outside by being made of a polymer material, for example, polyimide, which is about 130 times larger. ) Is to minimize the peeling from the second metal pattern (138).

When the frit pattern is provided in contact with the second metal pattern without a shock-absorbing pattern as in the related art, the frit pattern is easily peeled from the second metal pattern by receiving the frit pattern by almost 100% of external impact. In the case of the organic light emitting device according to the embodiment, when the impact is applied from the outside by forming a shock-absorbing pattern 124 made of a polymer material having an elastic modulus of the size described above under the second metal pattern 138 The impact mitigating pattern 124 is to absorb most of the shock, it is characterized in that it is possible to minimize the peeling of the frit pattern (161).

In general, the peeling test due to the impact of the organic light emitting device is performed by free fall several times at a height of about 1.5 mm, or by putting it in a box made of a metal material larger than the organic light emitting device and vibrating from side to side for a predetermined time. In order to continuously apply an impact to the organic light emitting device.

When performing such an impact test, assuming that the level at which peeling of the first substrate and the second substrate hardly occurs (the substrate peeling level of the liquid crystal display device bonded using an epoxy-based sealant) is 3, When the first and second substrates are bonded to each other using only the frit pattern as described above, the numerical value is about 1.5, and in the case of the organic light emitting device 101 according to the exemplary embodiment of the present invention provided with the impact relaxation pattern, 2.0 to 2.4. It turned out to be enough. Therefore, it can be seen from the test results that an improvement of about 33% to 60% is achieved compared to the conventional organic light emitting device.

On the other hand, although not shown in the drawings, as a modification, when the switching and driving thin film transistor is configured as a bottom gate type, the first metal pattern is formed in contact with the inner surface of the first substrate, and the gate insulating film is formed thereon. The impact relief pattern is formed on the gate insulating layer, and the second metal pattern is formed on the impact relaxation pattern.

On the other hand, in the case of the embodiment and the modified example, the drain contact exposing the drain electrode 136 of the driving thin film transistor DTr on the driving and switching thin film transistor DTr (not shown) corresponding to the display area AA. A protective layer 140 having a hole 143 is formed. In this case, the protective layer 140 may be removed to correspond to the portion where the frit pattern 161 is formed to expose the second metal pattern 138. When the laser beam is irradiated to cure the frit pattern 161, the laser beam exposed to the outside of the frit pattern 161 is directly irradiated onto the second metal pattern 138 to reflect the laser beam. This is to prevent element breakage and deterioration of characteristics by minimizing heat transfer to the components configured in the display area AA.

In addition, the display area AA is in contact with the drain electrode 136 of the driving thin film transistor DTr and the drain contact hole 143 on the passivation layer 140. The first electrode 147 is formed.

Next, a buffer pattern 150 is formed on the boundary of each pixel area P on the first electrode 147. In this case, the buffer pattern 150 is formed to overlap the edge of the first electrode 147 to surround each pixel area P, and has a lattice shape having a plurality of openings as a whole of the display area AA. It is coming true.

In addition, in each pixel area P surrounded by the buffer pattern 150, an organic emission layer 155 including an organic emission pattern (not shown) that emits red, green, and blue colors is formed on the first electrode 147, respectively. It is becoming. The organic light emitting layer 155 may be composed of a single layer made of an organic light emitting material as shown in the drawing, or although not shown in the drawing, a hole injection layer and a hole transporting layer to increase luminous efficiency. It may be composed of multiple layers of a layer, an emitting material layer, an electron transporting layer, and an electron injection layer.

In addition, a second electrode 158 is formed on the entire surface of the display area AA on the organic emission layer 155 and the buffer pattern 150. In this case, the first and second electrodes 147 and 158 and the organic light emitting layer 155 formed therebetween form an organic light emitting diode (E).

The second substrate 170 is positioned to face the first substrate 110 having the above-described structure, and the display is performed in the non-display area NA of the first substrate 110 and the second substrate 170. The frit pattern 161 has a second width smaller than the first width and borders the area AA so that the two substrates 110 and 170 may be bonded to each other. It is completely nested.

In addition, a reinforcement pattern 165 made of urethane or acrylic material having an elastic modulus having an elastic modulus of about 5 gPa to 15 gPa and having excellent elastic properties is provided outside the frit pattern 161.

In this case, the frit pattern 161 is in contact with the second metal pattern 138 with respect to the first substrate 110, and with the inner surface of the second substrate 170 with respect to the second substrate 170. The reinforcing pattern 165 contacts the outer surface of the frit pattern 161 to the outside of the frit pattern 161 and simultaneously with the inner surface of the first substrate 110. 2 is characterized by being formed in direct contact with the inner surface of the substrate 170.

On the other hand, as described above, when the reinforcement pattern 165 made of urethane or acrylic material having an elastic modulus of about 5 gPa to about 15 gPa in addition to the impact mitigation pattern 124 is further improved, the impact resistance against external impact is further improved. It was found that the peel resistance of about 2.4 to 2.8 was obtained.

1 is a view illustrating a basic pixel structure of a general active matrix organic light emitting diode.

2 is a schematic cross-sectional view of a conventional organic EL device.

3 is a cross-sectional view of an organic light emitting device having a conventional frit pattern.

4 is a cross-sectional view of an organic light emitting diode according to an embodiment of the present invention.

5 is a cross-sectional view of an organic light emitting diode according to a modification of the embodiment of the present invention.

<Explanation of symbols for main parts of the drawings>

101 organic light emitting device 110 first substrate

113: semiconductor layer 113a: first region

113b: second region 116: gate insulating film

120: gate electrode 121: gate wiring

122: first metal pattern 123: interlayer insulating film

124: shock alleviation pattern 125: semiconductor layer contact hole

133: source electrode 136: drain electrode

138: second metal pattern 140: protective layer

143: drain contact hole 147: first electrode

150: buffer pattern 155: organic light emitting layer

158: second electrode 161: frit pattern

165: reinforcement pattern AA: display area

DA: drive area NA: non-display area

P: pixel area

Claims (9)

A display region including a plurality of pixel regions, a first substrate having a non-display region defined therein; a second substrate facing the same; a driving and switching thin film transistor and an organic light emitting diode in each of the pixel regions; In the organic light emitting device having a, A first metal pattern having a first width in the non-display area of the first substrate; An impact mitigating pattern formed between the first substrate and the lower portion of the first metal pattern, the material having an elastic modulus of 15 gPa to 25 gPa, having a width smaller than the first width and completely overlapping the first metal pattern; A frit pattern in contact with the upper surface of the first metal pattern in the non-display area and simultaneously in contact with the second substrate and bordering the display area and having a width smaller than the first width and completely overlapping the first metal pattern. And the frit pattern is baked and cured by laser beam irradiation, and the first metal pattern reflects the laser beam to prevent heat transfer to a display area. The method of claim 1,   The material having an elastic modulus of 15 gPa to 25 gPa is an organic light emitting device of polyimide as a polymer material. The method of claim 1,   The shock absorbing pattern has the same shape as the frit pattern and is formed in the non-display area without interruption. The organic light emitting device of claim 1, wherein the organic light emitting device is formed to have a predetermined distance from the first width direction or the longitudinal direction in which the frit pattern extends. The method of claim 1, The driving thin film transistor and the switching thin film transistor have a stacked structure from a lower portion thereof, and a semiconductor layer of polysilicon, a gate insulating film, a gate electrode, an interlayer insulating film having a contact hole, and the semiconductor layer through the contact hole, respectively. It is a top gate type by forming a source and drain electrode in contact and spaced apart from each other, Alternatively, the bottom gate type is formed by forming a gate electrode, a gate insulating film, a semiconductor layer composed of an ohmic contact layer of impurity amorphous silicon spaced apart from the active layer of pure amorphous silicon, and a source and drain electrode spaced apart from each other. Characterized in organic light emitting device. The method of claim 4, wherein And the first metal pattern is made of the same metal material forming the source and drain electrodes. The method of claim 4, wherein When the driving and switching thin film transistor is a top gate type, a second metal pattern including an interlayer insulating film, a gate insulating film, and a second metal pattern formed of the same metal material as the gate electrode of the top gate type driving and switching thin film transistor is provided below the impact relaxation pattern. In the case where the driving and switching thin film transistor is a bottom gate type, a lower insulating layer and a second metal pattern made of the same metal material as the gate electrode of the bottom gate type driving and switching thin film transistor are provided below the impact relaxation pattern. EL device. The method of claim 1, A plurality of gate wires connected to the gate electrodes of the switching thin film transistors, and a plurality of data wires connected to the source electrodes of the switching thin film transistors and intersecting the plurality of gate wires to define the plurality of pixel areas. EL device. The method of claim 1, And an reinforcing pattern formed on an outer surface of the frit pattern and in contact with the inner surface of the first and second substrates. The method of claim 1, The reinforcement pattern is an organic light emitting diode made of urethane or acrylic material having an elastic modulus of about 5 gPa to about 15 gPa.

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