KR20110017049A - Method for producing of group iii nitride solar cell film - Google Patents
Method for producing of group iii nitride solar cell film Download PDFInfo
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- KR20110017049A KR20110017049A KR1020090074529A KR20090074529A KR20110017049A KR 20110017049 A KR20110017049 A KR 20110017049A KR 1020090074529 A KR1020090074529 A KR 1020090074529A KR 20090074529 A KR20090074529 A KR 20090074529A KR 20110017049 A KR20110017049 A KR 20110017049A
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- gallium nitride
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 150000004767 nitrides Chemical class 0.000 title description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000011521 glass Substances 0.000 claims abstract description 14
- 229910052738 indium Inorganic materials 0.000 claims abstract description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 238000004549 pulsed laser deposition Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- 239000000470 constituent Substances 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
본 발명은, 유리기판에 질화갈륨(GaN), 질화인듐갈륨(InGaN),질화알루미늄갈륨 (AlGaN), 질화알루미늄(AlN) 등의 III족 질화 혼합막을 증착하여 광전변환이 가능한 질화갈륨 태양전지 웨이퍼 성장에 관한 발명이다.A gallium nitride solar cell wafer capable of photoelectric conversion by depositing a group III nitride mixed film such as gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), and aluminum nitride (AlN) on a glass substrate. It is an invention about growth.
현재 태양전지 웨이퍼는 실리콘 기반의 결정질 웨이퍼와 비결정질 웨이퍼가 주종을 이루고 있다. 하지만 실리콘 기반의 태양전지는 제조 단가가 싼 편이지만 광전변환 효율이 7~19%대에 머무르고 있다. 이에 따라 변환 효율을 증가시키기 위하여 두 종류 이상의 물질이 혼합된 화합물 반도체를 이용하는 연구가 널리 진행되고 있는 추세이다. GaN, InGaN, AlGaN, AlN, InN 등의 III족 질화물 반도체는, 발광 소자와 고주파 하이파워 소자뿐만 아니라 태양 전지로의 응용이 확대되고 있는 추세이다. 본 발명은 질화갈륨(GaN) 태양전지 웨이퍼 제조 방법에 관한 것이다. 상기 언급한 발광 소자나 고주파 하이파워 소자들은 일반적으로 사파이어나 탄화실리콘 기판 위 에 성장되어 디바이스로 제작되고 있다. 이들 기판의 사이즈는 통상적으로 2인치 또는 4인치 지름을 가지는 원형 모양의 기판이다. 사파이어나 탄화실리콘 같은 기판이 이용되는 이유는 질화갈륨 성장 공법상에 1000℃ 이상의 높은 온도가 수반되기 때문에 이러한 온도에 견딜 수 있는 기판이 요구된다. 본 발명에서는 저온의 기판 온도를 유지하면서 대면적의 유리기판 위에 질화갈륨을 성장할 수 있는 화학기상증착법이 이용되었다.Currently, solar cell wafers are mainly composed of silicon-based crystalline wafers and amorphous wafers. However, silicon-based solar cells are cheaper to manufacture, but their photoelectric conversion efficiency remains at 7-19%. Accordingly, researches using compound semiconductors in which two or more kinds of materials are mixed to increase conversion efficiency have been widely conducted. Group III nitride semiconductors such as GaN, InGaN, AlGaN, AlN, and InN have tended to be widely applied to solar cells as well as light emitting devices and high frequency high power devices. The present invention relates to a method for manufacturing a gallium nitride (GaN) solar cell wafer. The light emitting devices and the high frequency high power devices mentioned above are generally grown on sapphire or silicon carbide substrates and manufactured as devices. These substrates are typically circular shaped substrates having a 2 inch or 4 inch diameter. The reason why substrates such as sapphire or silicon carbide are used is required because the gallium nitride growth method involves a high temperature of 1000 ° C. or higher. In the present invention, a chemical vapor deposition method capable of growing gallium nitride on a large glass substrate while maintaining a low temperature of the substrate is used.
기존의 상용화된 실리콘 계열의 태양전지의 7~19% 수준의 낮은 광전 변환 효율을 이론적으로 50% 이상의 광전변환 효율을 갖는 질화갈륨 태양전지 웨이퍼 제작이 가능하다. 광전변환 효율뿐만 아니라 기존 방식의 질화갈륨 생성 방식에 사용되는 2인치 또는 4인치 사파이어나 탄화실리콘 기판보다도 100배 이상의 넓은 대면적의 유리 기판 위에 질화갈륨 웨이퍼를 성장할 수 있어서 낮은 제조 단가를 구현할 수 있다.It is possible to manufacture a gallium nitride solar cell wafer having a photoelectric conversion efficiency of more than 50%, theoretically low photoelectric conversion efficiency of 7 ~ 19% of conventional commercial silicon-based solar cells. In addition to the photoelectric conversion efficiency, gallium nitride wafers can be grown on glass substrates with a large area of 100 times larger than 2 inch or 4 inch sapphire or silicon carbide substrates used in the conventional gallium nitride generation method, resulting in low manufacturing cost. .
기존의 고가의 사파이어 기판이나 탄화실리콘 기판보다 값싸고 대면적의 유리기판으로 대체함으로 값싸고 고 효율의 질화갈륨 태양전지 웨이퍼를 제작할 수 있다.Cheaper and more efficient gallium nitride solar cell wafers can be manufactured by replacing glass substrates with cheaper and larger area than existing expensive sapphire substrates or silicon carbide substrates.
현재 질화갈륨 웨이퍼 제작에 사용되는 제작 공법은 본 발명에 따르면, 대면적의 유리 기판에 GaN 등의 III족 질화물을 저온에서 성장시킬 수 있다. 또한, 기존의 LCD용 유리기판을 기판으로 이용하여 LCD 공정을 그대로 사용하여 디바이스를 제작할 수 있으며 하나의 유리 기판이 모듈이 되어 공정의 간소화와 생산성의 효과가 크다. 질화물의 소스로써 암모니아와 같은 유해 물질을 사용하지 않음으로써 유해물질을 제거하기 위한 설비가 불필요하며, 기판 재료의 선택 범위를 확대시킬 수 있고, 나아가서는 III족 질화물 반도체의 응용 범위를 확대시켜 발광소자로도 이용을 확대시킬 수 있다.According to the present invention, a fabrication method used for gallium nitride wafer fabrication can grow a group III nitride such as GaN at a low temperature on a large-area glass substrate. In addition, by using a glass substrate for the LCD as a substrate can be manufactured using the LCD process as it is, one glass substrate becomes a module, the process is simplified and the effect of productivity is great. By not using harmful substances such as ammonia as a source of nitride, no equipment for removing harmful substances is needed, and the selection range of substrate materials can be expanded, and further, the range of application of group III nitride semiconductors can be expanded. It can also be used to expand.
본 발명에 의한 유리기판 위에 성장된 질화갈륨 태양전지 웨이퍼 제작 방법은 다음과 같다. 현재 LCD 패널 공정에 이용되고 있는 대면적의 LCD용 유리기판을 이종기판으로 이용한다. 세정 공정을 거쳐 준비된 유리기판 위에 산화아연층을 원자층 증착법이나 펄스레이져증착법등을 이용하여 두께가 10 내지 500 나노미터인 것을 특징으로 증착한다. 형성된 산화아연층 위에 100℃ 내지 600℃의 저온의 기판 온도 조건하에서 화학기상증착법을 이용하여 n타입의 질화갈륨 층을 0.01 내지 1 마이크로미터정도의 두께로 성장한다. 그 다음으로는 인듐이 첨가된 질화갈륨 활성층을 성장하고 그 위에 0.01 내지 0.5 마이크로미터 정도의 두께로 p타입 질화갈륨 층을 성장한다.A method of fabricating a gallium nitride solar cell wafer grown on a glass substrate according to the present invention is as follows. Large area LCD glass substrates, which are currently used in LCD panel processes, are used as heterogeneous substrates. The zinc oxide layer is deposited on the glass substrate prepared through the cleaning process by using an atomic layer deposition method or a pulsed laser deposition method. The thickness is 10 to 500 nanometers. On the formed zinc oxide layer, an n-type gallium nitride layer is grown to a thickness of about 0.01 to 1 micrometer using chemical vapor deposition under low temperature substrate temperature of 100 ° C to 600 ° C. Next, an indium-added gallium nitride active layer is grown, and a p-type gallium nitride layer is grown thereon with a thickness of about 0.01 to 0.5 micrometers.
본 발명은, 현재 상업적으로 판매되고 있는 저 효율의 비정질 실리콘 태양전지를 광전 변환 효율이 더 향상된 고 효율의 질화갈륨 태양전지 제조에 적용 가능하여 저가의 고 효율 태양전지 시장을 형성하고 새로운 제2세대 박막형 태양전지 웨이퍼 산업 창출에 이바지할 수 있다.The present invention can be applied to the production of low-efficiency amorphous silicon solar cells, which are currently commercially available, for the production of high-efficiency gallium nitride solar cells with improved photoelectric conversion efficiency, thereby forming a low-cost, high-efficiency solar cell market and a new second generation. It can contribute to the creation of thin film solar cell wafer industry.
도 1은 본 발명에 따른 유리기판 위에 성장된 질화갈륨(GaN) 태양전지 웨이퍼의 공정 단면도이다.1 is a cross-sectional view of a gallium nitride (GaN) solar cell wafer grown on a glass substrate according to the present invention.
도 2는 산화아연(ZnO)층과 질화갈륨(GaN)층 사이에 질화갈륨(GaN) 버퍼층이 삽입된 질화갈륨(GaN) 태양전지 웨이퍼의 공정 단면도이다.2 is a process cross-sectional view of a gallium nitride (GaN) solar cell wafer in which a gallium nitride (GaN) buffer layer is inserted between a zinc oxide (ZnO) layer and a gallium nitride (GaN) layer.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US11427919B2 (en) | 2018-09-14 | 2022-08-30 | King Fahd University Of Petroleum And Minerals | Gallium oxynitride-zinc oxide photoelectrode for solar water splitting |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11427919B2 (en) | 2018-09-14 | 2022-08-30 | King Fahd University Of Petroleum And Minerals | Gallium oxynitride-zinc oxide photoelectrode for solar water splitting |
| US11851775B2 (en) | 2018-09-14 | 2023-12-26 | King Fahd University Of Petroleum And Minerals | Photoelectrochemical water splitting method |
| US11859295B2 (en) | 2018-09-14 | 2024-01-02 | King Fahd University Of Petroleum And Minerals | Photo electrochemical cell for water splitting |
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