KR20100138498A - Fabrication method of nano-scale structures on sic using afm local oxidation - Google Patents

Fabrication method of nano-scale structures on sic using afm local oxidation Download PDF

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Publication number
KR20100138498A
KR20100138498A KR1020090057060A KR20090057060A KR20100138498A KR 20100138498 A KR20100138498 A KR 20100138498A KR 1020090057060 A KR1020090057060 A KR 1020090057060A KR 20090057060 A KR20090057060 A KR 20090057060A KR 20100138498 A KR20100138498 A KR 20100138498A
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South Korea
Prior art keywords
silicon carbide
local oxidation
oxidation
atomic force
sic
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KR1020090057060A
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Korean (ko)
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구상모
조영득
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구상모
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure

Abstract

The present invention relates to a local oxidation method using atomic force microscopy, a method of forming an oxidation pattern by applying an appropriate sample doping and an electric field of an appropriate threshold value on silicon carbide (SiC), in which local oxidation is not easily formed. to be. In addition, since the oxidation pattern formed by this method uses a cantilever of an atomic force microscope, it is possible to form a fine oxide structure having a line width of several nanometers by local voltage.

Description

TECHNICAL FIELD OF THE INVENTION Formation of fine oxidized structure of silicon carbide using atomic force local oxidation method {FABRICATION METHOD OF NANO-SCALE STRUCTURES ON SiC USING AFM LOCAL OXIDATION}

The present invention relates to a method for forming a fine oxidation pattern of silicon carbide (SiC), which is a high energy bandgap semiconductor material that can be applied to semiconductor fields such as high power, high temperature, and environmentally-resistant devices using atomic force local oxidation.

The present invention can be widely used and used in the field of semiconductor electronic devices such as, for example, high power devices and sensors using a fine oxide pattern formed on a silicon carbide (SiC) substrate.

An atomic force microscope (AFM) is a state-of-the-art analytical instrument capable of analyzing microstructures ranging from a few micros to several nanoscales. In addition, the atomic force microscope is expanding its application field as a device such as measuring electronic characteristics or implementing nano-patterns, as well as the role of such analytical equipment.

As one of these applications, local oxidation using atomic force microscopy is a technique for generating nanoscale patterns in a specific sample by applying an electric voltage between the tip and the sample to form an electric field. In the current device fabrication, a pattern process using a photolithography method is widely used. This pattern technology has the advantage of being able to make a large amount of patterns in a short time, but there are big disadvantages such as the cost and time spent in manufacturing the mask. In addition, due to the disadvantages of the process to be performed in a high vacuum state, the problem of proper control of the electron beam and acceleration voltage, high electron scattering due to the high voltage is used in the manufacture of the mask, and directly to the semiconductor device processing It is not used.

On the other hand, the patterning technique using the atomic force microscope has the advantage of not requiring a mask, minimizing electron scattering by using a very low voltage, and manufacturing a fine pattern compared to the photoetch pattern technique. Because of these advantages, AFM localization is one of the process technologies of interest in the nanoscale semiconductor industry.

Silicon carbide (SiC) is a material having high thermal conductivity and critical voltage. When silicon carbide is used as an element, it is being spotlighted as a high energy gap material that can make a device that can operate in harsh conditions of high power, high temperature, and high pressure. In addition, it is a material that is expected to replace the current silicon (Si) -based power semiconductor industry. Among the various polytypes, 4H-silicon carbide-based research, which is most advantageous in terms of electron mobility, is being conducted.

However, the micro local oxidation of silicon carbide using atomic force microscopy has been reported to be difficult due to the physical strength and chemical inertness of the silicon carbide material. Many studies have been published on the success or improvement of local oxidation based on silicon. For example, a thin coating of gold on a substrate can result in local oxidation [J. S. Hwang, Z, Y. You, S. Y. Lin, et al., Appl. Phys. Lett., Vol. 86, p. 161901, 2005], study to improve oxidation by irradiating topical UV light source [J. S. Hwang, Z, S. Hu, T. Y. Lu, et al. , Nanotechnology, Vol. 17, p. 3299-3303, 2006]. However, few cases have succeeded in local oxidation based on silicon carbide. Previously published literature [X. N. Xie, H. J. Chung, C. H. Sow, and A. T. S. Wee, Appl. Phys. Lett., Vol. 84, p.4904-4916, 2004, has shown that silicon carbide does not form oxidation due to graphitization under normal atomic force local oxidation, and the bias is applied more than 1000 times longer. Research has shown that oxidation has occurred.

Fabrication of microstructures in silicon carbide can be widely used in the field of high power semiconductor devices. With the current focus on the development of hybrid cars in the automotive industry, atomic carbide local oxidation of silicon carbide offers the possibility of fabricating realistic fine high power semiconductor devices.

In this study, microstructures were fabricated by atomic force microscopy on silicon carbide using appropriate critical field and high doping concentration.

The method for forming a fine oxide structure according to an embodiment of the present invention is a method for producing a fine oxide structure of silicon carbide using an atomic force microscopy.

Pretreatment such as cleaning the surface of the sample may be performed prior to the atomic force microscopy.

A voltage can be applied to form an atomic threshold probe or more between the AFM and the sample.

Silicon carbide having an appropriate doping concentration or more can be used.

In the present invention, due to the graphitization of silicon carbide, which is a high-energy bandgap material, solves a problem in that oxidation is not formed in general atomic force local oxidation. In the present situation where the atomic microscope local oxidation of silicon carbide is not actively conducted, the study of the electric field and the formation pattern of the oxidation pattern may play an important role for the fabrication of silicon carbide microstructure.

In this study, local oxidation was carried out using a contact mode of an atomic force microscope (Surface Imaging Systems Gmbh, Germany) at room temperature with a humidity of 40 to 50%, and surface analysis was performed using a non-contact mode. The tip used is a tip coated with Pt / Ir on silicon (N-type, 0.01 ~ 0.025 Ωcm), the modulus of elasticity is ~ 3 N / m, and has a resonance frequency value of 50 ~ 70 kHz band.

In the present invention, when the voltage of the probe and the sample is increased, the electric field of the portion where the tip surface and the tip of the tip abuts is increased, and when the electric field is increased, the tunneling of negative ions (OH − ) between the tip and the sample is increased, The following chemical reactions are accelerated: The chemical reaction at the tip under the electric field is as follows (Fig. 1).

4H 2 O + 4e - → 2H 2 ↑ + 4OH -

As a result of the chain reaction, H 2 O is formed by combining hydrogen ions (H 2 ) and hydroxide ions (OH − ) as follows.

4H + + 4OH - → 2H 2 O

The produced water causes the following chemical reaction on the sample surface to produce oxides.

SiC + 2H 2 O + 4h + → SiO 2 + 4H + + C 4 +

Also, the tunneling anion (OH -) are tailored for higher oxide pattern made more active in these reactions.

It was confirmed that an oxide pattern was formed when a value above a certain threshold voltage was applied on a silicon carbide substrate having a doping concentration of ˜10 15 cm −3 or more. Using a 2-D simulation to compare the electric field value of the sample surface at the threshold voltage and the constant doping range, when the doping concentration increases from -10 16 cm -3 to -10 18 cm -3 , A constant electric field value (~ 5 x 10 7 V / m) can be seen on the sample surface, but the p-type silicon carbide was found to increase constantly. The results of the actual local oxidation showed that the p-type 4H-silicon carbide was well formed at the doping concentration of about 10 15 cm −3 or more (FIG. 2). In low-concentration substrates, silicon carbide has a higher energy bandgap than silicon, so the energy required for carrier movement is greater, so the electric field is lowered.

The doping concentration and the electric field conditions were studied and analyzed, and the atomic microscope localization of silicon carbide was successful. As the electric field increases in proportion to the voltage, the chemistry between the tip and the substrate increases, resulting in an increase in the oxidation height. On the silicon carbide substrate having a doping concentration value of about 9 × 10 15 cm −3 or more, an oxidation pattern was generated by applying a threshold electric field value of about 4 × 10 7 V / m or more (FIG. 3).

1 is a schematic diagram showing the basic principle of the AFM local oxidation method according to an embodiment of the present invention.

FIG. 2 is a graph showing an oxidation height and a figure in which a microstructure is formed on silicon carbide using an atomic force microscopy according to an embodiment of the present invention.

3 is a diagram showing the electric field distribution using 2-D simulation when the voltage is formed between the probe and the sample according to an embodiment of the present invention.

Claims (4)

Fabrication of Fine Oxidized Structure of Silicon Carbide by Atomic Force Microscopy. The method of claim 1, Pretreatment methods such as cleaning the surface of the sample prior to performing AFM local oxidation. The method of claim 1, A method of applying a voltage to form an atomic threshold probe or greater between an atomic force microscope probe and a sample. The method of claim 1, Process using silicon carbide having more than the appropriate doping concentration.
KR1020090057060A 2009-06-25 2009-06-25 Fabrication method of nano-scale structures on sic using afm local oxidation KR20100138498A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190058741A (en) * 2017-11-20 2019-05-30 극동대학교 산학협력단 Method of forming nano-scale structures on silicon-carbide by local oxidation
KR20190135844A (en) * 2018-05-29 2019-12-09 한국과학기술원 Variable temperature scanning probe microscope

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190058741A (en) * 2017-11-20 2019-05-30 극동대학교 산학협력단 Method of forming nano-scale structures on silicon-carbide by local oxidation
KR20190135844A (en) * 2018-05-29 2019-12-09 한국과학기술원 Variable temperature scanning probe microscope

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