KR20100133679A - Apparatus for thin layer deposition - Google Patents

Abstract

PURPOSE: A thin film deposition device is provided to improve a manufacturing yield and deposition efficiency by being easily applied to a large scale substrate production process. CONSTITUTION: A deposition source part(110) radiates a deposition material. A first nozzle(120) is arranged in one side of the deposition source part. The first nozzle comprises a plurality of first slits formed along a first direction. A second nozzle(150) faces the deposition source part. The second nozzle comprises a plurality of second slits formed along the first direction. A barrier wall assembly(130) is arranged between the first nozzle and the second nozzle along the first direction. The barrier wall assembly comprises a plurality of barrier walls dividing a space between the second nozzle and the first nozzle into a plurality of deposition spaces. A correction plate(190) secludes at least a part among deposition materials radiated from the deposition source part between the first and the second nozzle.

Description

Thin film deposition apparatus {Apparatus for thin layer deposition}

The present invention relates to a thin film deposition apparatus, and more particularly, to a thin film deposition apparatus which can be easily applied to a large-scale substrate mass production process and has an improved manufacturing yield.

Among the display devices, the organic light emitting display device has attracted attention as a next generation display device because of its advantages of having a wide viewing angle, excellent contrast, and fast response speed.

In general, an organic light emitting display device has a stacked structure in which a light emitting layer is inserted between an anode and a cathode so that colors can be realized on the principle that holes and electrons injected from the anode and the cathode recombine in the light emitting layer to emit light. However, such a structure makes it difficult to obtain high-efficiency light emission. Therefore, intermediate layers such as an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer are selectively inserted between each electrode and the light emitting layer.

However, since it is practically very difficult to form fine patterns of organic thin films such as a light emitting layer and an intermediate layer, and the luminous efficiency of red, green, and blue varies depending on the layers, a conventional thin film deposition apparatus has a large area (more than 5G). It is impossible to manufacture large size organic light emitting display devices with satisfactory driving voltage, current density, brightness, color purity, luminous efficiency and lifespan due to impossible patterning for mother glass. It's urgent.

Meanwhile, the organic light emitting display device includes a light emitting layer and an intermediate layer including the same between the first and second electrodes facing each other. In this case, the electrodes and the intermediate layer may be formed by various methods, one of which is deposition. In order to fabricate an organic light emitting display device using a deposition method, a fine metal mask (FMM) having the same pattern as the pattern of the thin film to be formed is in close contact with the surface of the substrate on which the thin film or the like is to be formed. The material is deposited to form a thin film of a predetermined pattern.

An object of the present invention is to provide a thin film deposition apparatus that can be easily manufactured, can be easily applied to a large-scale substrate mass production process, manufacturing yield and deposition efficiency can be improved, and the deposition material can be easily recycled.

The present invention provides a thin film deposition apparatus for forming a thin film on a deposition target, comprising: a deposition source for emitting a deposition material; A first nozzle disposed on one side of the deposition source and having a plurality of first slits formed in a first direction; A second nozzle disposed to face the deposition source and having a plurality of second slits formed along the first direction; A barrier wall disposed between the first nozzle and the second nozzle along a first direction, the barrier wall including a plurality of barrier walls partitioning a space between the first nozzle and the second nozzle into a plurality of deposition spaces; assembly; And a compensation plate disposed between the first nozzle and the second nozzle to block at least a portion of the deposition material radiated from the deposition source, wherein the deposition source, the first nozzle, the second nozzle, and the correction plate And the barrier wall assembly is formed to be movable relative to the deposition target.

In the present invention, the correction plate may be provided so that the thickness of the thin film in each of the deposition space is formed substantially the same.

In the present invention, the correction plate may be formed in a lower height as the distance from the center of each deposition space.

Here, the correction plate may be formed in the shape of an arc or cosine curve.

In the present invention, the correction plate may be formed such that the height at the center of each deposition space is lower than the height at the end of each deposition space.

In the present invention, the correction plate may be formed such that the blocking amount of the deposition material at the center of each deposition space is greater than the blocking amount of the deposition material at the end of each deposition space.

In the present invention, the correction plate may be formed between the blocking walls adjacent to each other.

In the present invention, the compensation plate is formed for each of the deposition space, the size or shape of each of the compensation plate may be changed according to the characteristics of the deposition material radiated from the first slit disposed in each deposition space. .

Here, the size or shape of each of the compensation plates may be changed so that the thickness of the thin film deposited for each of the plurality of deposition spaces is the same.

In the present invention, each of the plurality of blocking walls is formed in a second direction substantially perpendicular to the first direction to divide the space between the first nozzle and the second nozzle into a plurality of deposition spaces. Can be.

In the present invention, the plurality of blocking walls may be arranged at equal intervals.

In the present invention, the blocking walls and the second nozzle may be formed to be spaced apart at a predetermined interval.

In the present invention, the barrier wall assembly may be formed to be detachable from the thin film deposition apparatus.

In the present invention, the barrier wall assembly may include a first barrier wall assembly having a plurality of first barrier walls and a second barrier wall assembly having a plurality of second barrier walls.

Here, each of the plurality of first blocking walls and the plurality of second blocking walls is formed in a second direction substantially perpendicular to the first direction, thereby providing a space between the first nozzle and the second nozzle. It may be partitioned into a plurality of deposition spaces.

Here, each of the plurality of first blocking walls and the plurality of second blocking walls may be disposed to correspond to each other.

Here, the first blocking wall and the second blocking wall corresponding to each other may be disposed on substantially the same plane.

In the present invention, the second nozzle may be formed so as to be spaced apart from the deposition target on which the deposition material vaporized in the deposition source is deposited.

In the present invention, the deposition source, the first nozzle, the second nozzle and the barrier wall assembly may be formed to be relatively movable relative to the deposition target.

Here, the deposition source, the first nozzle, the second nozzle, the compensation plate and the barrier wall assembly may deposit the deposition material on the deposition target while moving relative to the deposition target.

The deposition source, the first nozzle, the second nozzle, the compensating plate, and the barrier wall assembly may be relatively moved in a third direction perpendicular to the first direction and the second direction, respectively.

According to another aspect of the present invention, there is provided a thin film deposition apparatus for forming a thin film on a deposition target, comprising: a deposition source for emitting a deposition material; A first nozzle and a second nozzle provided at one side of the deposition source and disposed to face each other; A barrier wall assembly having a plurality of barrier walls disposed between the first nozzle and the second nozzle; And a compensating plate disposed between the first nozzle and the second nozzle to block at least a portion of the deposition material radiated from the deposition source, wherein the second nozzle is spaced apart from the deposition target at a predetermined interval. It provides a thin film deposition apparatus, characterized in that formed to be.

In the present invention, the plurality of blocking walls are disposed along the first direction between the first nozzle and the second nozzle, and the space between the first nozzle and the second nozzle is divided into a plurality of deposition spaces. Can be partitioned

Here, the compensation plate may be provided so that the thicknesses of the thin films in the respective deposition spaces are substantially the same.

Here, the correction plate may be formed in a lower height as the distance from the center of each deposition space.

Here, the correction plate may be formed in the shape of an arc or cosine curve.

Here, the correction plate may be formed to have a height at the center of each deposition space is lower than the height at the end of each deposition space.

Here, the compensation plate may be formed such that the blocking amount of the deposition material at the center of each deposition space is greater than the blocking amount of the deposition material at the end of each deposition space.

In the present invention, the correction plate may be formed between the blocking walls adjacent to each other.

In the present invention, the compensation plate is formed for each of the deposition space, the size or shape of each of the compensation plate may be changed according to the characteristics of the deposition material radiated from the first slit disposed in each deposition space. .

Here, the size or shape of each of the compensation plates may be changed so that the thickness of the thin film deposited for each of the plurality of deposition spaces is the same.

In the present invention, the plurality of blocking walls may be arranged at equal intervals.

In the present invention, the blocking walls and the second nozzle may be formed to be spaced apart at a predetermined interval.

In the present invention, the barrier wall assembly may be formed to be detachable from the thin film deposition apparatus.

In the present invention, the barrier wall assembly may include a first barrier wall assembly having a plurality of first barrier walls and a second barrier wall assembly having a plurality of second barrier walls.

Here, each of the plurality of first blocking walls and the plurality of second blocking walls is formed in a second direction substantially perpendicular to the first direction, thereby providing a space between the first nozzle and the second nozzle. It may be partitioned into a plurality of deposition spaces.

Here, each of the plurality of first blocking walls and the plurality of second blocking walls may be disposed to correspond to each other.

Here, the first blocking wall and the second blocking wall corresponding to each other may be disposed on substantially the same plane.

In the present invention, the deposition source, the first nozzle, the second nozzle, the compensation plate, and the barrier wall assembly may be formed to be relatively movable with respect to the deposition target.

Here, the deposition source, the first nozzle, the second nozzle, the compensation plate and the barrier wall assembly may deposit the deposition material on the deposition target while moving relative to the deposition target.

The deposition source, the first nozzle, the second nozzle, the compensating plate, and the barrier wall assembly may be relatively moved along a plane parallel to the deposition target.

According to the thin film deposition apparatus of the present invention made as described above, it is easy to manufacture, can be easily applied to the large-scale substrate mass production process, the production yield and deposition efficiency is improved, the deposition material can be easily recycled effect can be obtained have.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a perspective view schematically showing a deposition apparatus according to a preferred embodiment of the present invention, FIG. 2 is a schematic side view of the deposition apparatus of FIG. 1, and FIG. 3 is a schematic plan view of the deposition apparatus of FIG. 1.

1, 2 and 3, the thin film deposition apparatus 100 according to an embodiment of the present invention is a deposition source 110, the first nozzle 120, the barrier wall assembly 130, the second nozzle 150, a second nozzle frame 155, and a substrate 160. In addition, the thin film deposition apparatus 100 according to an embodiment of the present invention further includes a correction plate 190.

1, 2 and 3 are not shown in the chamber for convenience of description, it is preferable that all the configurations of FIGS. 1 to 3 are arranged in a chamber in which an appropriate degree of vacuum is maintained. This is to ensure the straightness of the deposition material.

In detail, in order for the deposition material 115 emitted from the deposition source 110 to pass through the first nozzle 120 and the second nozzle 150 to be deposited on the substrate 160 in a desired pattern, a chamber (not shown) is basically provided. The inside must maintain the same high vacuum as the FMM deposition method. In addition, when the temperature of the barrier wall 131 and the second nozzle 150 is sufficiently lower than the deposition source 110 temperature (about 100 ° or less), the space between the first nozzle 120 and the second nozzle 150 is maintained in a high vacuum state. Can be maintained. As such, when the temperature of the barrier wall assembly 130 and the second nozzle 150 is sufficiently low, all of the deposition material 115 radiated in an undesired direction may be adsorbed onto the barrier wall assembly 130 to maintain high vacuum. Since the collision between the deposition materials does not occur, the straightness of the deposition materials can be secured. In this case, since the barrier wall assembly 130 faces the high temperature deposition source 110 and the temperature near the deposition source 110 is increased by about 167 °, the partial cooling device may be further provided if necessary. . To this end, a cooling member may be formed in the barrier wall assembly 130.

In this chamber (not shown), a substrate 160, which is a deposition target, is disposed. The substrate 160 may be a substrate for a flat panel display, and a large area substrate such as a mother glass capable of forming a plurality of flat panel displays may be applied.

On the side opposite to the substrate 160 in the chamber, a deposition source 110 in which the deposition material 115 is received and heated is disposed. As the deposition material 115 contained in the deposition source 110 is vaporized, deposition is performed on the substrate 160. In detail, the deposition source 110 includes the crucible 111 filled with the deposition material 115 therein, and the deposition material 115 filled inside the crucible 111 by heating the crucible 111. One side, in detail, comprises a heater 112 for evaporating to the first nozzle 120 side.

The first nozzle 120 is disposed on one side of the deposition source 110, in detail, the side facing the substrate 160 from the deposition source 110. In addition, a plurality of first slits 121 are formed in the first nozzle 120 along the Y-axis direction. Here, the plurality of first slits 121 may be formed at equal intervals. The deposition material 115 vaporized in the deposition source 110 passes through the first nozzle 120 and is directed toward the substrate 160, which is the deposition target.

One side of the first nozzle 120 is provided with a barrier wall assembly 130. The barrier wall assembly 130 includes a plurality of barrier walls 131 and a barrier wall frame 132 disposed outside the barrier walls 131. The plurality of blocking walls 131 may be provided to be parallel to each other along the Y-axis direction. Here, the plurality of blocking walls 131 may be formed at equal intervals. In addition, each of the blocking walls 131 are formed to be parallel to the XZ plane when viewed in the drawing, that is, perpendicular to the Y-axis direction. The plurality of blocking walls 131 disposed as described above divides the space between the first nozzle 120 and the second nozzle 150 to be described later into a plurality of deposition spaces S. That is, in the thin film deposition apparatus 100 according to the exemplary embodiment, the deposition space S is separated by each first slit 121 through which the deposition material is injected by the blocking walls 131. It features one.

Here, each of the blocking walls 131 may be disposed between the first slits 121 adjacent to each other. In other words, it may be regarded that one first slit 121 is disposed between the blocking walls 131 neighboring each other. Preferably, the first slit 121 may be located at the center of the barrier wall 131 adjacent to each other. As such, the barrier wall 131 divides the space between the first nozzle 120 and the second nozzle 150 to be described later into a plurality of deposition spaces S, thereby being discharged to one first slit 121. The deposition material is not mixed with the deposition materials discharged from the other first slits 121, but is deposited on the substrate 160 through the second slits 151. In other words, the blocking walls 131 guide the movement path in the Y-axis direction of the deposition material so that the deposition material discharged through the first slit 121 is not dispersed.

Meanwhile, a blocking wall frame 132 may be further provided outside the plurality of blocking walls 131. The blocking wall frame 132 is provided on the upper and lower surfaces of the plurality of blocking walls 131 to support the positions of the plurality of blocking walls 131, and at the same time, the deposition material discharged through the first slit 121 is dispersed. It serves to guide the movement path of the deposition material in the Z-axis direction.

Meanwhile, the barrier wall assembly 130 may be formed to be separated from the thin film deposition apparatus 100. In detail, the conventional FMM deposition method has a problem that the deposition efficiency is low. Here, the deposition efficiency refers to the ratio of the material vaporized on the substrate among the vaporized material in the deposition source, the deposition efficiency in the conventional FMM deposition method is about 32%. Moreover, in the conventional FMM deposition method, since about 68% of organic matter which is not used for deposition is deposited everywhere in the evaporator, there is a problem that its recycling is not easy.

In order to solve such a problem, in the thin film deposition apparatus 100 according to the exemplary embodiment of the present invention, since the deposition space is separated from the external space by using the barrier wall assembly 130, it is not deposited on the substrate 160. Deposition materials are mostly deposited within the barrier wall assembly 130. Therefore, after a long time deposition, when a large amount of deposition material is accumulated in the barrier wall assembly 130, the barrier wall assembly 130 is separated from the thin film deposition apparatus 100, and then put into a separate deposition material recycling apparatus to recover the deposition material. can do. Through such a configuration, it is possible to obtain an effect of improving deposition efficiency and reducing manufacturing cost by increasing deposition material recycling rate.

A second nozzle 150 and a second nozzle frame 155 are further provided between the deposition source 110 and the substrate 160. The second nozzle frame 155 is formed in a lattice form, such as a window frame, and the second nozzle 150 is coupled to the inside thereof. In addition, a plurality of second slits 151 are formed in the second nozzle 150 along the Y-axis direction. The deposition material 115 vaporized in the deposition source 110 passes through the first nozzle 120 and the second nozzle 150 and is directed toward the substrate 160, which is the deposition target.

Meanwhile, in the thin film deposition apparatus 100 according to the exemplary embodiment, the total number of the second slits 151 is greater than the total number of the first slits 121. In addition, the number of the second slits 151 is greater than the number of the first slits 121 disposed in each deposition space S.

 That is, one or more first slits 121 are disposed between two blocking walls 131 neighboring each other. At the same time, a plurality of second slits 151 are disposed between two blocking walls 131 neighboring each other. In addition, the space between the first nozzle 120 and the second nozzle 150 is divided by two blocking walls 131 adjacent to each other, so that the deposition space is separated for each first slit 121. Therefore, the deposition material radiated from one first slit 121 is to be deposited on the substrate 160 through most of the second slits 151 in the same deposition space.

Meanwhile, the second nozzle 150 may be manufactured through etching, which is the same method as that of a conventional fine metal mask (FMM), in particular, a stripe type mask. In this case, in the conventional FMM deposition method, the FMM size should be formed to be the same as the substrate size. Therefore, as the substrate size increases, the FMM also needs to be enlarged. Therefore, there is a problem in that it is not easy to manufacture the FMM, and it is not easy to align the FMM to a precise pattern. However, in the case of the thin film deposition apparatus 100 according to an embodiment of the present invention, the deposition is performed while the thin film deposition apparatus 100 moves in the Z-axis direction in a chamber (not shown). In other words, the thin film deposition apparatus 100 according to the exemplary embodiment of the present invention continuously deposits the thin film deposition apparatus 100 or the substrate 160 while moving in the Z-axis direction. Therefore, in the thin film deposition apparatus 100 of the present invention, the second nozzle 150 can be made much smaller than the conventional FMM. That is, in the case of the thin film deposition apparatus 100 of the present invention, when the width in the Y-axis direction of the second nozzle 150 and the width in the Y-axis direction of the substrate 160 are the same, the second nozzle 150 may be formed. The length of the Z-axis direction may be formed smaller than the length of the substrate 160. Thus, since the second nozzle 150 can be made much smaller than the conventional FMM, the second nozzle 150 of the present invention is easy to manufacture. That is, in all processes, such as etching operations of the second nozzle 150, precision tension and welding operations, moving and cleaning operations thereafter, the small size of the second nozzle 150 is advantageous over the FMM deposition method. In addition, this becomes more advantageous as the display device becomes larger.

On the other hand, the above-described barrier wall assembly 130 and the second nozzle 150 may be formed to be spaced apart from each other to some extent. The reason for separating the barrier wall assembly 130 and the second nozzle 150 from each other is as follows.

First, the second nozzle 150 and the second nozzle frame 155 should be aligned with a precise position and a gap Gap on the substrate 160, that is, a part requiring high precision control. Therefore, in order to facilitate the control by lightening the weight of the portion requiring high precision, the deposition source 110, the first nozzle 120, and the barrier wall assembly 130, which require no precision control and are expensive, are prepared. It is separated from the two nozzles 150 and the second nozzle frame 155. Next, since the temperature of the barrier wall assembly 130 is increased by at least 100 degrees by the deposition source 110 in a high temperature state, the temperature of the elevated barrier wall assembly 130 is not conducted to the second nozzle 150. In order to prevent the barrier wall assembly 130 and the second nozzle 150 to be separated. Next, in the thin film deposition apparatus 100 of the present invention, the deposition material attached to the barrier wall assembly 130 may be mainly recycled, and the deposition material attached to the second nozzle 150 may not be recycled. Therefore, when the barrier wall assembly 130 is separated from the second nozzle 150, the recycling of the deposition material may be easily performed. In addition, a partition (not shown) may be further provided to increase the nozzle replacement cycle by preventing deposition of the deposition material on the second nozzle 150 in a state of depositing one substrate and the next substrate. At this time, the partition (not shown) is easy to install between the blocking wall 131 and the second nozzle 150.

In addition, a correction plate 190 may be further provided to secure the film uniformity of the entire substrate 160. When the blocking wall 131 is separated from the second nozzle 150, it is very easy to install the correction plate 190. Done. Such a correction plate 190 will be described in detail with reference to FIGS. 5 and 6.

4A is a view schematically showing a state in which a deposition material is being deposited in the thin film deposition apparatus according to an embodiment of the present invention, and FIG. 4B is a shade generated when the deposition space is separated by a barrier wall as shown in FIG. 4A. FIG. 4C is a diagram illustrating a shadow that occurs when the deposition space is not separated.

Referring to FIG. 4A, the deposition material vaporized from the deposition source 110 is deposited on the substrate 160 through the first nozzle 120 and the second nozzle 150. In this case, since the space between the first nozzle 120 and the second nozzle 150 is partitioned into a plurality of deposition spaces S by the blocking walls 131, the first nozzle ( The deposition material from each first slit 121 of 120 is not mixed with the deposition material from another first slit 121.

When the space between the first nozzle 120 and the second nozzle 150 is partitioned by the barrier wall assembly 130, as shown in FIG. 4B, the deposition materials are at an angle of about 55 ° to 90 °. Passed through the second nozzle 150 is deposited on the substrate 160. That is, the angle of incidence of the deposition material passing through the second slit 151 adjacent to the barrier wall assembly 130 is about 55 °, and the angle of incidence of the deposition material passing through the second slit 151 of the central portion is determined by the substrate ( Almost perpendicular to 160). At this time, the width SH1 of the shaded region generated in the substrate 160 is determined by the following equation (1).

SH ₁ = s * d _s / h

On the other hand, when the space between the first nozzle and the second nozzle is not partitioned by the barrier walls, as shown in FIG. 4C, the deposition materials pass through the second nozzle at various angles in a wider range than in FIG. 4B. Done. That is, in this case, not only the deposition material radiated from the first slit directly above the second slit, but also the deposition materials radiated from the other first slit are deposited on the substrate 160 through the second slit, thus the substrate 160 The width of the shaded area SH ₂ formed in) is very large as compared with the case where the blocking plate is provided. In this case, the width SH ₂ of the shaded region generated in the substrate 160 is determined by Equation 2 below.

SH ₂ = s * 2d / h

When comparing Equation 1 and Equation 2, since d (interval between neighboring blocking walls) is formed to be much larger than several times to several tens more than d _s (width of the first slit), the first nozzle 120 It can be seen that when the space between the second nozzle 150 is partitioned by the barrier walls 131, the shading is much smaller. Here, in order to reduce the width SH ₂ of the shaded area generated in the substrate 160, (1) reduce the distance between the barrier wall 131 is installed (d decrease), or (2) the second nozzle 150. The distance between the substrate 160 and the substrate 160 should be reduced (s reduced), or (2) the height of the barrier wall 131 should be increased (h increased).

As such, by providing the barrier wall 131, the shadow generated on the substrate 160 is reduced, and thus the second nozzle 150 can be separated from the substrate 160.

In detail, in the thin film deposition apparatus 100 according to the exemplary embodiment of the present invention, the second nozzle 150 is formed to be spaced apart from the substrate 160 to some extent. In other words, in the conventional FMM deposition method, the deposition process was performed by closely attaching a mask to the substrate in order to prevent shadows on the substrate. However, when the mask is in close contact with the substrate as described above, there has been a problem that a defect problem occurs due to contact between the substrate and the mask. Also, since the mask cannot be moved relative to the substrate, the mask must be formed to the same size as the substrate. Therefore, as the display device becomes larger, the size of the mask must be increased, but there is a problem that it is not easy to form such a large mask.

In order to solve such a problem, in the thin film deposition apparatus 100 according to the exemplary embodiment of the present invention, the second nozzle 150 is disposed to be spaced apart from the substrate 160, which is the deposition target, at a predetermined interval. This can be realized by providing the barrier wall 131, whereby the shadow generated on the substrate 160 is reduced.

According to the present invention, after forming the mask smaller than the substrate, it is possible to perform the deposition while moving the mask with respect to the substrate, it is possible to obtain the effect that the mask fabrication becomes easy. Moreover, the effect which prevents the defect by the contact between a board | substrate and a mask can be acquired. In addition, since the time for bringing the substrate into close contact with the mask is unnecessary in the step, an effect of increasing the manufacturing speed can be obtained.

Hereinafter, a correction plate for securing the film uniformity of the entire substrate will be described in detail.

5 is a diagram schematically illustrating a distribution form of a deposition film deposited on a substrate by a thin film deposition apparatus according to an embodiment of the present invention. Here, FIG. 5 shows a case where both the organic radiation amount and the radiation coefficient emitted from each opening (ie, the first slit) are the same. In FIG. 5, S denotes each deposition space, and d denotes the distance between neighboring barrier walls.

In FIG. 5, the distribution form of the deposited film deposited by the thin film deposition apparatus without a compensation plate is shown by line A, and the distribution form of the deposited film deposited by the thin film deposition apparatus with the correction plate is shown by line B. In FIG. .

As shown in FIG. 5, the emission of organic matter in a vacuum is the most perpendicular to the first slit (see 121 in FIG. 1), that is, the center portion of each deposition space S according to the cosine law. The organics are emitted, and the closer to the barrier wall (see 131 in FIG. 1), the less organic matter is emitted. Therefore, the deposited film deposited by the thin film deposition apparatus without the correction plate is formed in the form as shown in the line A of FIG. That is, when only the deposition spaces S are separated, the deposition film is formed such that the center portion is convex, and when viewed as a whole, the deposition film is formed in such a manner that the convex portion and the concave portion are repeated.

In this case, the relationship between the distance from the center of each deposition space S and the thickness of the deposited film can be easily derived through experiments, and in most cases it can be expressed as a function of cos ⁿ (θ).

In order to remove the unevenness of the thickness of the deposited film generated in each deposition space S as described above, a correction plate 190 as shown in FIG. 1 may be provided. The correction plate (see 190 in FIG. 1) is repeatedly arranged in a substantially arc or cosine curve shape between adjacent blocking walls (see 131 in FIG. 1). The correction plate (see 190 of FIG. 1) serves to block some of the deposition material moving from the first slit (see 121 of FIG. 1) to the second slit (see 151 of FIG. 1).

In detail, since the deposited film deposited by the thin film deposition apparatus has a convex shape in the center part, in order to make it uniform, some of the deposition material directed to the center part must be blocked. Thus, a calibration plate (see 190 in FIG. 1) is placed in the middle of the path of deposition material to block some of the deposition material. At this time, since the compensation plate (see 190 of FIG. 1) is formed in a circular arc to cosine curve shape, the deposition material collides with the center portion relatively protruded to block more deposition material, and the deposition material is located at the edge portion. Less collisions result in fewer barriers to deposition material. In this case, the compensation plate (see 190 in FIG. 1) may be formed such that the thickness of the thinnest portion in the deposition space S, generally, the film thickness of both ends of the deposition space S is the total thickness. .

As such, by arranging the correction plate in the movement path of the deposition material, the deposition film deposited by the thin film deposition apparatus may be corrected to have a shape such as line B of FIG. 5. In other words, the portion of the deposition material is deposited a lot of the deposition plate to increase the height of the compensation plate to block the deposition material, the portion of the deposition material is deposited by reducing the height of the compensation plate to reduce the deposition material, so that the overall thickness of the deposition material The deposition amount is corrected to be uniform.

According to the present invention, since the uniformity of the thin film deposited on the substrate is uniformly formed within an error range of 1 to 2%, an effect of improving product quality and reliability can be obtained.

6 is a diagram schematically illustrating a distribution form of a deposition film deposited on a substrate by a thin film deposition apparatus according to an embodiment of the present invention. Here, FIG. 6 is a diagram showing a case where the amount of emission of organic matter and the emission coefficient emitted from each opening (that is, the first slit) are different from each other. In FIG. 6, S denotes each deposition space, and d denotes the distance between neighboring barrier walls.

In FIG. 6, the distribution form of the deposited film deposited by the thin film deposition apparatus without the correction plate is shown by line C, and the distribution form of the deposited film deposited by the thin film deposition apparatus with the correction plate is shown by the line D. In FIG. .

As shown in FIG. 6, the emission of organic matter in a vacuum is the most perpendicular to the first slit (see 121 in FIG. 1), that is, the center portion of each deposition space S according to the cosine law. The organics are emitted, and the closer to the barrier wall (see 131 in FIG. 1), the less organic matter is emitted. However, when there are a plurality of first slits to which the deposition material is radiated, as in the thin film deposition apparatus according to the exemplary embodiment of the present invention, the internal temperature of the deposition source (see 110 in FIG. 1) is not uniform, and the deposition is performed. Since the geometrical conditions of the center portion and the edge portion of the circle (see 110 in FIG. 1) are different, the organic emission amount or radiation coefficient may be different for each first slit. Therefore, in this case, the deposited film deposited by the thin film deposition apparatus is formed in the form as shown in the line C of FIG. That is, the central portion is convex in each deposition space S, and when viewed as a whole, the maximum film thickness of each deposition space S is different for each deposition space S. FIG.

In this case, the relationship between the distance from the center of each deposition space S and the thickness of the deposited film can be easily derived through experiments, and in most cases it can be expressed as a function of cos ⁿ (θ).

Here, FIG. 6 differs from FIG. 5 because the maximum thickness of the deposition film is different for each deposition space S, and thus the correction plate (see 190 of FIG. 1) is also formed differently for each deposition space S. FIG. That is, in the case of a deposition space S having a relatively thick maximum film thickness, such as the deposition space S on the leftmost side of FIG. 6, the deposition material collides relatively large by increasing the size of the compensation plate (see 190 in FIG. 1). This blocks more deposition material. On the other hand, in the case of a deposition space S having a relatively thin maximum film thickness, such as the deposition space S on the rightmost side of FIG. 6, the deposition material collides relatively less by reducing the size of the compensation plate (see 190 in FIG. This allows less deposition of the deposited material. In this case, the compensation plate 190 may be formed such that the minimum film thickness of the deposition space S having the smallest film thickness becomes the entire film thickness.

As such, by arranging the correction plate in the movement path of the deposition material, the deposition film deposited by the thin film deposition apparatus may be corrected in the form as shown in the line D of FIG. 6. That is, the correction plate not only uniformly adjusts the film thickness in each deposition space (S), but also serves to uniformly adjust the overall film thickness of the deposited film deposited on the substrate.

According to the present invention, since the uniformity of the thin film deposited on the substrate is uniformly formed within an error range of 1 to 2%, an effect of improving product quality and reliability can be obtained.

7 is a diagram schematically showing a thin film deposition apparatus according to a modification of the first embodiment of the present invention. One modification of the first embodiment of the present invention is the same as the other embodiment of the other parts, the configuration of the correction plate is characteristically different. Therefore, in the present modified example, detailed descriptions of components that use the same reference numerals as the original embodiment will be omitted.

Referring to FIG. 7, the thin film deposition apparatus 100 according to the modification of the first embodiment of the present invention may include a deposition source 110, a first nozzle 120, a barrier wall assembly 130, and a second nozzle 150. ), A second nozzle frame 155, and a substrate 160. In addition, the thin film deposition apparatus 100 according to an embodiment of the present invention further includes a correction plate 190 ′.

Here, in one modification of the first embodiment of the present invention, the correction plate 190 ′ is characterized in that the central portion is formed in the lower portion of the first barrier wall assembly 130. In addition, the shape of the correction plate 190 ′ may be formed in a form of combining the arc to cosine curve up and down. In addition, although not shown in the drawings, the correction plate may be formed on the side of the second barrier wall assembly as well as the first barrier wall assembly, and the formation position thereof may be variously formed on the lower end, the center and the upper end of the barrier wall assembly. In addition, if the shape is also a shape that can ensure the film uniformity of the entire substrate, it may be formed in a variety of shapes, as well as circular arcs, cosine curves and shapes that combine them up and down.

8 is a perspective view schematically showing a thin film deposition apparatus according to a second embodiment of the present invention.

Referring to FIG. 8, the thin film deposition apparatus 200 according to the second embodiment of the present invention may include a deposition source 210, a first nozzle 220, a first barrier wall assembly 230, and a second barrier wall assembly ( 240, a second nozzle 250, a second nozzle frame 255, and a substrate 260.

Here, although the chamber is not shown in FIG. 8 for convenience of description, all the components of FIG. 8 are preferably disposed in a chamber in which an appropriate degree of vacuum is maintained. This is to ensure the straightness of the deposition material.

In such a chamber (not shown), a substrate 260 which is a deposition target is disposed. The deposition source 210 in which the deposition material 215 is received and heated is disposed on the side opposite to the substrate 260 in the chamber (not shown). The deposition source 210 includes a crucible 211 and a heater 212.

The first nozzle 220 is disposed on one side of the deposition source 210, in detail, on the side facing the substrate 260 in the deposition source 210. In addition, a plurality of first slits 221 are formed in the first nozzle 220 along the Y-axis direction.

One side of the first nozzle 220 is provided with a first barrier wall assembly 230. The first barrier wall assembly 230 includes a plurality of first barrier walls 231 and a first barrier wall frame 232 disposed outside the first barrier walls 231.

One side of the first barrier wall assembly 230 is provided with a second barrier wall assembly 240. The second barrier wall assembly 240 includes a plurality of second barrier walls 241 and a second barrier wall frame 242 disposed outside the second barrier walls 241.

In addition, a second nozzle 250 and a second nozzle frame 255 are further provided between the deposition source 210 and the substrate 260. The second nozzle frame 255 is formed in a lattice form, such as a window frame, and the second nozzle 250 is coupled to the inside thereof. In addition, a plurality of second slits 251 are formed in the second nozzle 250 along the Y-axis direction.

Here, the thin film deposition apparatus 200 according to the second embodiment of the present invention is characterized in that the barrier wall assembly is separated into the first barrier wall assembly 230 and the second barrier wall assembly 240.

In detail, the plurality of first blocking walls 231 may be provided to be parallel to each other along the Y-axis direction. The plurality of first blocking walls 231 may be formed at equal intervals. In addition, each of the first blocking walls 231 is formed to be parallel to the XZ plane when viewed in the drawing, that is, perpendicular to the Y-axis direction.

In addition, the plurality of second blocking walls 241 may be provided to be parallel to each other along the Y-axis direction. The plurality of second blocking walls 241 may be formed at equal intervals. In addition, each second blocking wall 241 is formed to be parallel to the XZ plane when viewed in the drawing, that is, perpendicular to the Y-axis direction.

The plurality of first blocking walls 231 and the second blocking walls 241 arranged as described above serve to partition the space between the first nozzle 220 and the second nozzle 250. Here, in the thin film deposition apparatus 200 according to the second embodiment of the present invention, each of the first slits 221 to which the deposition material is sprayed by the first blocking wall 231 and the second blocking wall 241. It is characterized in that the deposition space is separated by.

Here, each of the second blocking walls 241 may be disposed to correspond one-to-one with each of the first blocking walls 231. In other words, each of the second blocking walls 241 may be aligned with each of the first blocking walls 231 and disposed in parallel with each other. That is, the first blocking wall 231 and the second blocking wall 241 corresponding to each other are positioned on the same plane. As such, the space between the first nozzle 220 and the second nozzle 250 to be described later is partitioned by the first blocking walls 231 and the second blocking walls 241 arranged side by side. The deposition material discharged from one first slit 221 is not mixed with the deposition materials discharged from the other first slit 221 and is deposited on the substrate 260 through the second slit 251. In other words, the first blocking walls 231 and the second blocking walls 241 guide the movement path in the Y-axis direction of the deposition material so that the deposition material discharged through the first slit 221 is not dispersed. To perform.

In the drawing, although the length of the first blocking wall 231 and the width of the second blocking wall 241 in the Y-axis direction are the same, the spirit of the present invention is not limited thereto. That is, the second blocking wall 241 that requires precise alignment with the second nozzle 250 is relatively thin, whereas the first blocking wall 231 that does not require precise alignment is relatively thin. It will also be possible to form thick, so that the production is easy.

On the other hand, the thin film deposition apparatus 200 according to the second embodiment of the present invention is characterized by further comprising a correction plate 290 in order to ensure the film uniformity of the entire substrate 260. In detail, the compensating plate 290 is repeatedly disposed in a substantially arc or cosine curve shape between the first blocking walls 231 neighboring each other. The compensating plate 290 blocks a portion of the deposition material moving from the first slit 221 toward the second slit 251. The uniformity of the thin film deposited on the substrate by the correction plate is uniformly formed within an error range of 1% to 2%, thereby obtaining an effect of improving product quality and reliability. Since the correction plate is described in detail in the first embodiment, the detailed description thereof is omitted in this embodiment.

Although the present invention has been described with reference to the embodiments shown in the drawings, this is merely exemplary, and it will be understood by those skilled in the art that various modifications and equivalent other embodiments are possible. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

1 is a perspective view schematically showing a deposition apparatus according to a preferred embodiment of the present invention.

FIG. 2 is a schematic side view of the deposition apparatus of FIG. 1.

3 is a schematic plan view of the deposition apparatus of FIG. 1.

4A is a view schematically showing a state in which a deposition material is being deposited in the thin film deposition apparatus according to the exemplary embodiment of the present invention.

FIG. 4B is a diagram illustrating shadows generated when the deposition space is separated by the barrier wall as shown in FIG. 4A.

FIG. 4C is a diagram illustrating shadows occurring when the deposition space is not separated. FIG.

5 and 6 are diagrams schematically showing a distribution form of a deposited film deposited on a substrate by a thin film deposition apparatus according to an embodiment of the present invention.

7 is a perspective view schematically showing a thin film deposition apparatus according to a modification of the first embodiment of the present invention.

8 is a perspective view schematically showing a thin film deposition apparatus according to a second embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

100: thin film deposition apparatus 110: deposition source

120: first nozzle 130: barrier wall assembly

131: barrier wall 132: barrier wall frame

150: second nozzle 155: second nozzle frame

160: substrate 190: correction plate

Claims (40)

In the thin film deposition apparatus for forming a thin film on a to-be-deposited body, A deposition source for emitting a deposition material; A first nozzle disposed on one side of the deposition source and having a plurality of first slits formed in a first direction; A second nozzle disposed to face the deposition source and having a plurality of second slits formed along the first direction; A barrier wall disposed between the first nozzle and the second nozzle along a first direction, the barrier wall including a plurality of barrier walls partitioning a space between the first nozzle and the second nozzle into a plurality of deposition spaces; assembly; And A compensation plate disposed between the first nozzle and the second nozzle to block at least a portion of the deposition material radiated from the deposition source, And the deposition source, the first nozzle, the second nozzle, the compensation plate, and the barrier wall assembly are formed to be movable relative to the deposition target. The method of claim 1, The correction plate is a thin film deposition apparatus, characterized in that the thickness of the thin film in each of the deposition space is provided to be formed substantially the same. The method of claim 1, The correction plate is a thin film deposition apparatus, characterized in that the lower the height is formed from the center of each deposition space. The method of claim 3, wherein The correction plate is a thin film deposition apparatus, characterized in that formed in the shape of an arc or cosine curve. The method of claim 1, The correction plate is a thin film deposition apparatus, characterized in that the height at the center of each deposition space is formed lower than the height at the end of each deposition space. The method of claim 1, And the compensation plate is formed such that the blocking amount of the deposition material at the center of each deposition space is greater than the blocking amount of the deposition material at the end of each deposition space. The method of claim 1, The compensation plate is a thin film deposition apparatus, characterized in that formed between the adjacent barrier walls. The method of claim 1, The correction plate is formed for each deposition space, The thin film deposition apparatus of claim 1, wherein the size or shape of each of the compensation plates may be changed according to characteristics of the deposition material radiated from the first slits disposed in the deposition spaces. The method of claim 8, The thin film deposition apparatus, characterized in that the size or shape of each of the compensation plates can be changed so that the thickness of the thin film deposited for each of the plurality of deposition spaces is the same. The method of claim 1, Each of the plurality of barrier walls is formed in a second direction substantially perpendicular to the first direction to divide the space between the first nozzle and the second nozzle into a plurality of deposition spaces. Deposition apparatus. The method of claim 1, The thin film deposition apparatus of claim 1, wherein the plurality of barrier walls are arranged at equal intervals. The method of claim 1, And the blocking walls and the second nozzle are formed to be spaced apart at a predetermined interval. The method of claim 1, And the barrier wall assembly is formed to be separated from the thin film deposition apparatus. The method of claim 1, And the barrier wall assembly comprises a first barrier wall assembly having a plurality of first barrier walls and a second barrier wall assembly having a plurality of second barrier walls. The method of claim 14, Each of the plurality of first blocking walls and the plurality of second blocking walls is formed in a second direction substantially perpendicular to the first direction, thereby providing a plurality of spaces between the first nozzle and the second nozzle. Thin film deposition apparatus characterized by partitioning the deposition spaces. The method of claim 14, The thin film deposition apparatus of claim 1, wherein each of the plurality of first blocking walls and the plurality of second blocking walls is disposed to correspond to each other. The method of claim 16, The thin film deposition apparatus of claim 1, wherein the first and second barrier walls corresponding to each other are disposed on substantially the same plane. The method of claim 1, The second nozzle is thin film deposition apparatus, characterized in that formed to be spaced apart from the deposition target vapor deposition material vaporized in the deposition source at a predetermined interval. The method of claim 1, And the deposition source, the first nozzle, the second nozzle, the compensation plate, and the barrier wall assembly deposit the deposition material on the deposition target while moving relative to the deposition target. . The method of claim 10, Wherein the deposition source, the first nozzle, the second nozzle, the compensating plate, and the barrier wall assembly move relatively in a third direction perpendicular to the first direction and the second direction, respectively. Deposition apparatus. In the thin film deposition apparatus for forming a thin film on a to-be-deposited body, A deposition source for emitting a deposition material; A first nozzle and a second nozzle provided at one side of the deposition source and disposed to face each other; A barrier wall assembly having a plurality of barrier walls disposed between the first nozzle and the second nozzle; And And a compensation plate disposed between the first nozzle and the second nozzle to block at least a portion of the deposition material radiated from the deposition source. And the second nozzle is formed to be spaced apart from the deposition target at a predetermined interval. The method of claim 21, The plurality of barrier walls may be disposed along the first direction between the first nozzle and the second nozzle to partition a space between the first nozzle and the second nozzle into a plurality of deposition spaces. Thin film deposition apparatus. The method of claim 22, The correction plate is a thin film deposition apparatus, characterized in that the thickness of the thin film in each of the deposition space is provided to be substantially the same. The method of claim 22, The correction plate is a thin film deposition apparatus, characterized in that the lower the height is formed from the center of each deposition space. The method of claim 24, The correction plate is a thin film deposition apparatus, characterized in that formed in the shape of an arc or cosine curve. The method of claim 22, The correction plate is a thin film deposition apparatus, characterized in that the height at the center of each deposition space is formed lower than the height at the end of each deposition space. The method of claim 22, And the compensation plate is formed such that the blocking amount of the deposition material at the center of each deposition space is greater than the blocking amount of the deposition material at the end of each deposition space. The method of claim 21, The correction plate is a thin film deposition apparatus, characterized in that formed between the adjacent barrier walls. The method of claim 22, The correction plate is formed for each deposition space, The thin film deposition apparatus of claim 1, wherein the size or shape of each of the compensation plates may be changed according to characteristics of the deposition material radiated from the first slits disposed in the deposition spaces. 30. The method of claim 29, The thin film deposition apparatus, characterized in that the size or shape of each of the compensation plates can be changed so that the thickness of the thin film deposited for each of the plurality of deposition spaces is the same. The method of claim 21, The thin film deposition apparatus of claim 1, wherein the plurality of barrier walls are arranged at equal intervals. The method of claim 21, And the blocking walls and the second nozzle are formed to be spaced apart at a predetermined interval. The method of claim 21, And the barrier wall assembly is formed to be separated from the thin film deposition apparatus. The method of claim 21, And the barrier wall assembly comprises a first barrier wall assembly having a plurality of first barrier walls and a second barrier wall assembly having a plurality of second barrier walls. The method of claim 34, wherein Each of the plurality of first blocking walls and the plurality of second blocking walls is formed in a second direction substantially perpendicular to the first direction, thereby providing a plurality of spaces between the first nozzle and the second nozzle. Thin film deposition apparatus characterized by partitioning the deposition spaces. The method of claim 34, wherein The thin film deposition apparatus of claim 1, wherein each of the plurality of first blocking walls and the plurality of second blocking walls is disposed to correspond to each other. 37. The method of claim 36, The thin film deposition apparatus of claim 1, wherein the first and second barrier walls corresponding to each other are disposed on substantially the same plane. The method of claim 21, And the deposition source, the first nozzle, the second nozzle, the compensation plate, and the barrier wall assembly are formed to be movable relative to the deposition target. 39. The method of claim 38, And the deposition source, the first nozzle, the second nozzle, the compensation plate, and the barrier wall assembly deposit the deposition material on the deposition target while moving relative to the deposition target. . 39. The method of claim 38, And the deposition source, the first nozzle, the second nozzle, the compensating plate, and the barrier wall assembly move relatively along a plane parallel to the deposition target.

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