KR20100131770A - Apparatus for thin layer deposition - Google Patents

Abstract

PURPOSE: An apparatus for depositing a thin film is provided to prevent the pattern error due to the temperature increase of a second nozzle since the temperature of a second nozzle frame, which gribs the second nozzle in a tensile state, is uniformly maintained. CONSTITUTION: An apparatus(100) for depositing a thin film consists of a depositing source(110), first and second nozzles(120,130) and barrier assemblies(131,132). The first and second nozzles are formed on one side of the depositing source. The first and second nozzles are arranged to face each other. The barrier assembly comprises a plurality of barriers. The barriers are arranged between the first and second nozzles. The second nozzle is arranged to be spaced from a deposited member. The barriers are arranged to slope to the moving direction of the thin film depositing apparatus.

Description

Thin film deposition apparatus {Apparatus for thin layer deposition}

The present invention relates to a thin film deposition apparatus, and more particularly, to a thin film deposition apparatus which can be easily applied to a large-scale substrate mass production process and can improve the uniformity of the deposited film.

Among the display devices, the organic light emitting display device has attracted attention as a next generation display device because of its advantages of having a wide viewing angle, excellent contrast, and fast response speed.

In general, an organic light emitting display device has a stacked structure in which a light emitting layer is inserted between an anode and a cathode so that colors can be realized on the principle that holes and electrons injected from the anode and the cathode recombine in the light emitting layer to emit light. However, such a structure makes it difficult to obtain high-efficiency light emission. Therefore, intermediate layers such as an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer are selectively inserted between each electrode and the light emitting layer.

However, since it is practically very difficult to form fine patterns of organic thin films, such as a light emitting layer and an intermediate layer, and the luminous efficiency of red, green, and blue varies depending on the layer, the conventional thin film deposition apparatus has a large area (5G). It is impossible to manufacture a large organic light emitting display device having a satisfactory driving voltage, current density, brightness, color purity, luminous efficiency, and lifespan because it is impossible to pattern the above mother-glass. This is urgent.

Meanwhile, the organic light emitting display device includes a light emitting layer and an intermediate layer including the same between the first and second electrodes facing each other. In this case, the electrodes and the intermediate layer may be formed by various methods, one of which is deposition. In order to fabricate an organic light emitting display device using a deposition method, a fine metal mask (FMM) having the same pattern as the pattern of the thin film to be formed is in close contact with the surface of the substrate on which the thin film or the like is to be formed. The material is deposited to form a thin film of a predetermined pattern.

An object of the present invention is to provide a thin film deposition apparatus that can be easily manufactured, can be easily applied to a large-scale substrate mass production process, manufacturing yield and deposition efficiency can be improved, and the deposition material can be easily recycled.

A thin film deposition apparatus according to an embodiment of the present invention includes a deposition source, a first nozzle disposed on one side of the deposition source and having a plurality of first slits formed along one direction, and disposed to face the deposition source. And a second nozzle having a plurality of second slits formed along the one direction, and a plurality of blocking walls arranged along the one direction to partition a space between the first nozzle and the second nozzle. An assembly, wherein the plurality of barrier walls are arranged to be inclined in the one direction.

In the present invention, the longitudinal direction of each of the plurality of blocking walls and the one direction may not be perpendicular to each other.

In the present invention, the angle between the longitudinal direction of each of the plurality of blocking walls and the one direction may be an acute angle.

In the present invention, the angle between the direction of the longitudinal section of each of the plurality of blocking walls and the one direction may be about 90 ° to about 99 °.

In the present invention, the plurality of blocking walls may be arranged at equal intervals.

In the present invention, one or more first slits may be disposed between two adjacent blocking walls of the plurality of blocking walls.

In the present invention, a plurality of second slits may be disposed between two adjacent blocking walls of the plurality of blocking walls.

In the present invention, the number of the second slits may be larger than the number of the first slits disposed between two neighboring blocking walls among the plurality of blocking walls.

In the present invention, the total number of the second slits may be larger than the total number of the first slits.

In the present invention, the plurality of blocking walls may be arranged at equal intervals.

In the present invention, the blocking walls and the second nozzle may be formed to be spaced apart at a predetermined interval.

In the present invention, the blocking wall assembly may be further provided with a cooling member.

Here, the cooling member may be a cooling fin protruding from an outer circumferential surface of the barrier wall assembly.

In the present invention, the thin film deposition apparatus may further include a second nozzle frame coupled to the second nozzle to support the second nozzle.

Here, the temperature of the second nozzle frame may be maintained substantially uniform during the deposition process.

Here, the second nozzle frame may be further provided with a heat radiation fin.

Here, a heat shield plate may be disposed between the deposition source and the second nozzle frame.

In the present invention, the barrier wall assembly may be formed to be detachable from the thin film deposition apparatus.

In the present invention, the thin film deposition apparatus may be provided in a vacuum chamber.

In the present invention, the second nozzle may be formed so as to be spaced apart from the deposit to which the deposition material vaporized from the deposition source is deposited at a predetermined interval.

According to another aspect of the present invention, there is provided a thin film deposition apparatus for forming a thin film on an object to be deposited, comprising: a deposition source, a first nozzle and a second nozzle disposed on one side of the deposition source and disposed to face each other; And a blocking wall assembly having a plurality of blocking walls disposed between the first nozzle and the second nozzle, wherein the second nozzle is disposed to be spaced apart from the deposition target at a predetermined interval, The barrier walls are provided to be inclined with respect to the moving direction of the thin film deposition apparatus.

In the present invention, the inclination angle of the plurality of blocking walls with respect to the moving direction may be an acute angle.

In the present invention, the inclination angle of the plurality of blocking walls with respect to the moving direction may be about 1 ° to 10 °.

In the present invention, the deposition material evaporated in the deposition source may be deposited on the deposition through the first nozzle and the second nozzle.

In the present invention, each of the plurality of blocking walls may be formed in a direction substantially perpendicular to the first nozzle and the second nozzle to partition a space between the first nozzle and the second nozzle.

In the present invention, the plurality of blocking walls may be arranged at equal intervals.

In the present invention, the blocking walls and the second nozzle may be formed to be spaced apart at a predetermined interval.

In the present invention, the blocking wall assembly may be further provided with a cooling member.

Here, the cooling member may be a cooling fin protruding from an outer circumferential surface of the barrier wall assembly.

In the present invention, the thin film deposition apparatus may further include a second nozzle frame coupled to the second nozzle to support the second nozzle.

Here, the temperature of the second nozzle frame may be maintained substantially uniform during the deposition process.

Here, the second nozzle frame may be further provided with a heat radiation fin.

Here, a heat shield plate may be disposed between the deposition source and the second nozzle frame.

In the present invention, the barrier wall assembly may be formed to be detachable from the thin film deposition apparatus.

In the present invention, a plurality of first slits may be formed in one direction in the first nozzle, and a plurality of second slits may be formed in the one nozzle in the second nozzle.

Here, the plurality of blocking walls may be disposed along the one direction to partition a space between the first nozzle and the second nozzle.

Here, at least one first slit may be disposed between two neighboring blocking walls among the plurality of blocking walls.

Here, the plurality of second slits may be disposed between two adjacent blocking walls of the plurality of blocking walls.

Here, the width of the second nozzle in the one direction and the width of the deposition target in the one direction may be formed to be substantially the same.

Here, the second nozzle may be disposed substantially parallel to the deposition target.

In the present invention, the first barrier wall assembly may be spaced apart from the first nozzle.

According to the thin film deposition apparatus of the present invention made as described above, it is easy to manufacture, can be easily applied to the mass production process of the substrate, the production yield and deposition efficiency is improved, the recycling of the deposition material is facilitated, the deposition thin film Can improve the uniformity.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a perspective view schematically showing a deposition apparatus according to a preferred embodiment of the present invention, FIG. 2 is a schematic side view of the deposition apparatus of FIG. 1, FIG. 3 is a schematic plan view of the deposition apparatus of FIG. 1, 4 is a longitudinal cross-sectional view schematically illustrating the barrier wall of FIG. 1.

1, 2, 3, and 4, the thin film deposition apparatus 100 according to the exemplary embodiment of the present invention includes a deposition source 110, a first nozzle 120, and a barrier wall assembly 130. , A second nozzle 150, a second nozzle frame 155, and a substrate 160.

Here, although FIGS. 1, 2. 3, and 4 do not show chambers for convenience of description, all the configurations of FIGS. 1 to 4 are preferably disposed in a chamber in which an appropriate degree of vacuum is maintained. This is to ensure the straightness of the deposition material.

In detail, in order for the deposition material 115 emitted from the deposition source 110 to pass through the first nozzle 120 and the second nozzle 150 to be deposited on the substrate 160 in a desired pattern, a chamber (not shown) is basically provided. The inside must maintain the same high vacuum as the fine metal mask (FMM) deposition method. In addition, when the temperature of the barrier wall 131 and the second nozzle 150 is sufficiently lower than the deposition source 110 temperature (about 100 ° or less), the space between the first nozzle 120 and the second nozzle 150 is maintained in a high vacuum state. Can be maintained. As such, when the temperatures of the barrier wall assembly 130 and the second nozzle 120 are sufficiently low, all of the deposition material 115 radiated in an undesired direction may be adsorbed onto the barrier wall assembly 130 to maintain high vacuum. Since the collision between the deposition materials does not occur, the straightness of the deposition materials can be secured. In this case, the barrier wall assembly 130 faces the deposition source 110 at a high temperature, and the temperature closes to the deposition source 110 at a maximum of about 167 °, so that a partial cooling device may be further provided if necessary. To this end, a cooling member may be formed in the barrier wall assembly 130. This will be described later.

In this chamber (not shown), a substrate 160, which is a vapor deposition body, is disposed. The substrate 160 may be a substrate for a flat panel display, and a large area substrate such as a mother glass capable of forming a plurality of flat panel displays may be applied.

On the side opposite to the substrate 160 in the chamber, a deposition source 110 in which the deposition material 115 is received and heated is disposed. As the deposition material 115 contained in the deposition source 110 is vaporized, deposition is performed on the substrate 160. In detail, the deposition source 110 includes the crucible 111 filled with the deposition material 115 therein, and the deposition material 115 filled inside the crucible 111 by heating the crucible 111. One side, in detail, may include a heater 112 for evaporating to the first nozzle 120 side.

The first nozzle 120 is disposed on one side of the deposition source 110, in detail, the side facing the substrate 160 from the deposition source 110. In addition, a plurality of first slits 121 are formed in the first nozzle 120 along the Y-axis direction. Here, the plurality of first slits 121 may be formed at equal intervals. The deposition material 115 vaporized in the deposition source 110 passes through the first nozzle 120 such that the deposition material 115 is directed toward the substrate 160, which is the deposition target.

A blocking wall assembly 130 may be provided at one side of the first nozzle 120. The blocking wall assembly 130 may include a plurality of blocking walls 131 and a blocking wall frame 132 provided outside the blocking walls 131.

Here, the plurality of blocking walls 131 may be disposed to be inclined in the Y-axis direction. 4 is a cross-sectional view of the deposition apparatus of FIG. 1 viewed in the X-axis direction from the YZ plane. Referring to FIG. 4, A may mean a direction of the second slit 150, and A may be a Z-axis direction. In addition, the A direction may be a moving direction of the deposition apparatus 100. B is one direction in which the second slits 151 are arranged. The B direction may be the Y axis direction.

Each of the blocking walls 131 may be disposed to be inclined at a predetermined angle θ1 with respect to the A direction. The predetermined angle θ1 may be an acute angle, for example, the predetermined angle θ1 may be about 1 ° to about 10 °.

In other respects, the blocking walls 131 may be disposed to be inclined at a predetermined angle θ2 with respect to the B direction, respectively. That is, the blocking walls 131 may be disposed not to be orthogonal to the B direction. The predetermined angle θ2 may be an acute angle, for example, the predetermined angle θ2 may be about 90 ° to about 99 °.

As described above, when the blocking walls 131 are disposed to be inclined, the uniformity of the thickness of the thin film deposited on the vapor deposition body 160 may be improved. This will be described later.

The plurality of blocking walls 131 may be formed at equal intervals. The plurality of blocking walls 131 arranged as described above serve to partition a space between the first nozzle 120 and the second nozzle 150 to be described later. Here, the thin film deposition apparatus 100 according to an embodiment of the present invention is characterized in that the deposition space is separated for each first slit 121 through which the deposition material is sprayed by the blocking wall 131. do.

Here, each of the blocking walls 131 may be disposed between the first slits 121 adjacent to each other. In other words, it may be regarded that one first slit 121 is disposed between the blocking walls 131 neighboring each other. Preferably, the first slit 121 may be located at the center of the barrier wall 131 adjacent to each other. As such, the barrier wall 131 partitions a space between the first nozzle 120 and the second nozzle 150, which will be described later, so that the deposition material discharged to the first slit 121 is separated from the first slit ( Mixing with the deposition materials discharged from 121 is minimized and deposited on the substrate 160 through the second slit 151. In other words, the barrier walls 131 guide the movement path in the Y-axis direction of the deposition material by minimizing mixing of the deposition materials discharged through the respective first slits 121 with each other.

Meanwhile, a blocking wall frame 132 may be further provided outside the plurality of blocking walls 131. The blocking wall frame 132 is provided on the upper and lower surfaces of the plurality of blocking walls 131 to support the positions of the plurality of blocking walls 131 and at the same time, the deposition material discharged through the first slit 121 is dispersed. It serves to guide the movement path of the deposition material in the Z-axis direction.

Meanwhile, the barrier wall assembly 130 may be formed to be separated from the thin film deposition apparatus 100. In detail, the conventional FMM deposition method has a problem that the deposition efficiency is low. Here, the deposition efficiency refers to the ratio of the material vaporized on the substrate among the vaporized material in the deposition source, the deposition efficiency in the conventional FMM deposition method is about 32%. Moreover, in the conventional FMM deposition method, since about 68% of organic matter which is not used for deposition is deposited everywhere in the evaporator, there is a problem that its recycling is not easy.

In order to solve such a problem, in the thin film deposition apparatus 100 according to the exemplary embodiment of the present invention, since the deposition space is separated from the external space by using the barrier wall assembly 130, it is not deposited on the substrate 160. Deposition materials are mostly deposited within the barrier wall assembly 130. Therefore, after a long time deposition, when a large amount of deposition material is accumulated in the barrier wall assembly 130, the barrier wall assembly 130 is separated from the thin film deposition apparatus 100, and then put into a separate deposition material recycling apparatus to recover the deposition material. can do. Through such a configuration, it is possible to obtain an effect of improving deposition efficiency and reducing manufacturing cost by increasing deposition material recycling rate.

In addition, since the first barrier wall assembly 130 is spaced apart from the first nozzle 120, heat is transferred to the first barrier wall assembly 130, thereby suppressing a temperature increase of the first barrier wall assembly 130. In addition, the first barrier wall assembly 130 may be spaced apart from the first nozzle 120 to secure a space for easily installing a member (not shown) for blocking radiant heat of the first nozzle 120. Specifically, it is easy to secure a space for a member that blocks radiant heat of a surface around the first slit 121 among the surfaces of the first nozzle 120.

A distance between the first barrier wall assembly 130 and the first nozzle 120 may be set to a desired value according to process conditions.

A second nozzle 150 and a second nozzle frame 155 are further provided between the deposition source 110 and the substrate 160. The second nozzle frame 155 is formed in a lattice form, such as a window frame, and the second nozzle 150 is coupled to the inside thereof. In addition, a plurality of second slits 151 are formed in the second nozzle 150 along the Y-axis direction. Here, the plurality of second slits 151 may be formed at equal intervals. The deposition material 115 vaporized in the deposition source 110 passes through the first nozzle 120 and the second nozzle 150 and is directed toward the substrate 160, which is the deposition target.

Here, the thin film deposition apparatus 100 according to an embodiment of the present invention is characterized in that the total number of the second slits 151 is larger than the total number of the first slits 121. In addition, the number of the second slits 151 is larger than the number of the first slits 121 disposed between the two blocking walls 131 adjacent to each other.

 That is, one or more first slits 121 are disposed between two blocking walls 131 neighboring each other. At the same time, a plurality of second slits 151 are disposed between two blocking walls 131 neighboring each other. In addition, the space between the first nozzle 120 and the second nozzle 150 is divided by two blocking walls 131 adjacent to each other, so that the deposition space is separated for each first slit 121. Therefore, the deposition material radiated from one first slit 121 is to be deposited on the substrate 160 through most of the second slits 151 in the same deposition space.

Meanwhile, the second nozzle 150 may be manufactured through etching, which is the same method as that of a conventional fine metal mask (FMM), in particular, a stripe type mask. In this case, in the conventional FMM deposition method, the FMM size should be formed to be the same as the substrate size. Therefore, as the substrate size increases, the FMM also needs to be enlarged. Therefore, there is a problem in that it is not easy to manufacture the FMM, and it is not easy to align the FMM to a precise pattern. However, in the case of the thin film deposition apparatus 100 according to an embodiment of the present invention, the thin film deposition apparatus 100 moves along one direction of the vapor deposition body 160 and the deposition is performed or the vapor deposition object 160 is moved. Deposition may occur while moving in one direction. For example, the thin film deposition apparatus 100 may be deposited while moving in the Z-axis direction in a chamber (not shown), or the thin film deposition apparatus 100 may be fixed in a chamber (not shown) and deposited. As the sieve 160 moves in the Z-axis direction, deposition may be performed. That is, when the thin film deposition apparatus 100 completes the deposition at the current position, the thin film deposition apparatus 100 or the substrate 160 is moved relatively in the Z-axis direction to continuously perform deposition. Therefore, in the thin film deposition apparatus 100 according to the exemplary embodiment of the present invention, the second nozzle 150 may be made much smaller than the conventional FMM. In detail, in the case of the thin film deposition apparatus 100 according to the exemplary embodiment, only the width in the Y-axis direction of the second nozzle 150 and the width in the Y-axis direction of the substrate 160 are the same. The length of the second nozzle 150 in the Z-axis direction may be smaller than the length of the substrate 160. Thus, since the second nozzle 150 can be made much smaller than the conventional FMM, the second nozzle 150 can be easily manufactured. That is, in all processes, such as etching operations of the second nozzle 150, precision tension and welding operations, moving and cleaning operations thereafter, the small size of the second nozzle 150 is advantageous over the FMM deposition method. In addition, this becomes more advantageous as the display device becomes larger.

On the other hand, the above-described barrier wall assembly 130 and the second nozzle 150 may be formed to be spaced apart from each other to some extent. The reason for separating the barrier wall assembly 130 and the second nozzle 150 from each other is as follows.

First, the second nozzle 150 and the second nozzle frame 155 should be aligned with a precise position and a gap Gap on the substrate 160, that is, a part requiring high precision control. Therefore, in order to facilitate the control by lightening the weight of the portion requiring high precision, the deposition source 110, the first nozzle 120, and the barrier wall assembly 130, which require no precision control and are expensive, are prepared. It is separated from the two nozzles 150 and the second nozzle frame 155. Next, since the temperature of the barrier wall assembly 130 is increased by at least 100 degrees by the deposition source 110 in a high temperature state, the temperature of the elevated barrier wall assembly 130 is not conducted to the second nozzle 150. In order to prevent the barrier wall assembly 130 and the second nozzle 150 to be separated. Next, in the thin film deposition apparatus 100 of the present invention, the deposition material attached to the barrier wall assembly 130 may be mainly recycled, and the deposition material attached to the second nozzle 150 may not be recycled. Therefore, when the barrier wall assembly 130 is separated from the second nozzle 150, the recycling of the deposition material may be easily performed. Finally, a partition (not shown) may be further provided to increase the nozzle replacement period by preventing deposition of the deposition material on the second nozzle 150 in a state of depositing one substrate and before depositing the next substrate. . At this time, the partition (not shown) is easy to install between the blocking wall 131 and the second nozzle 150.

The second nozzle frame 155 is formed in a lattice shape, such as a window frame, and the second nozzle 150 having a plurality of second slits 151 formed therein is coupled thereto. Here, in the thin film deposition apparatus 100 according to the embodiment of the present invention, when the second nozzle 150 and the second nozzle frame 155 are coupled, the second nozzle frame 155 is the second nozzle 150. It is characterized in that the second nozzle 150 and the second nozzle frame 155 is coupled to give a predetermined tensile force to the).

In detail, the precision of the second nozzle 150 may be divided into a manufacturing error of the second nozzle 150 and an error due to thermal expansion of the second nozzle 150 during deposition. Here, in order to minimize the manufacturing error of the second nozzle 150, a counter force technique used when precisely tensioning / welding the fine metal mask to the frame may be applied. This will be described in more detail as follows. First, as shown in FIG. 4, the second nozzle 150 is pressed from the inside to the outside to tension the second nozzle 150. Next, a compressive force is applied to the second nozzle frame 155 in a direction corresponding to the pressing force applied to the second nozzle 150, that is, in an opposite direction, to be in equilibrium with an external force applied to the second nozzle 150. . Next, the second nozzle 150 is coupled to the second nozzle frame 155 by welding the edge of the second nozzle 150 to the second nozzle frame 155. Finally, when the external force acting to balance the second nozzle 150 and the second nozzle frame 155 is removed, a tensile force is applied to the second nozzle 150 by the second nozzle frame 155. Using such a precision tensile / compression / welding technique, the manufacturing error of the second nozzle 150 can be manufactured to 2 μm or less even if there is an etching dispersion.

On the other hand, in the thin film deposition apparatus 100 according to an embodiment of the present invention, it is characterized in that the temperature of the second nozzle frame 155 is kept constant. In detail, in the present invention, since the second nozzle 150 continues to look at the high temperature deposition source 110, the temperature is raised to a certain degree (about 5 to 15 °) because the radiant heat is always received. As described above, when the temperature of the second nozzle 150 rises, the second nozzle 150 may expand to reduce pattern accuracy. In order to solve such a problem, in the present invention, the temperature of the second nozzle frame 155 that uses the stripe type second nozzle 150 and holds the second nozzle 150 in a tensioned state. By making it uniform, the pattern error by the temperature rise of the 2nd nozzle 150 is prevented.

In this case, since the thermal expansion (pattern error) in the horizontal direction (Y-axis direction) of the second nozzle 150 is determined by the temperature of the second nozzle frame 155, only the temperature of the second nozzle frame 155 is constant. Even if the temperature of the second nozzle 150 increases, the pattern error problem due to thermal expansion does not occur. On the other hand, thermal expansion in the longitudinal direction (Z-axis direction) of the second nozzle 150 exists, but this is a scanning direction and thus has no relation to pattern accuracy.

In this case, since the second nozzle frame 155 does not directly look at the deposition source 110 in a vacuum state, it does not receive radiant heat, and since the second nozzle frame 155 is not connected to the deposition source 110, the second nozzle frame 155 has no thermal conductivity. There is little room for the temperature to rise. If there is a problem of slight temperature rise (1 to 3 °), it is easy to maintain a constant temperature by using a thermal shield or a radiation pin. This will be described later.

As described above, the second nozzle frame 155 imparts a predetermined tensile force to the second nozzle 150, and the thermal expansion of the second nozzle 150 is maintained by maintaining the temperature of the second nozzle frame 155 constant. The problem and the pattern precision problem of the 2nd nozzle 150 are isolate | separated, and the effect which the pattern precision of the 2nd nozzle 150 improves can be acquired. That is, as described above, when the precision tension / compression / welding technique is used, the manufacturing error of the second nozzle 150 may be 2 μm or less even if there is an etching dispersion. In addition, the error due to thermal expansion due to the temperature rise of the second nozzle 150 is applied by applying a tensile force to the stripe type second nozzle 150 and making the temperature of the second nozzle frame 155 constant. Does not occur. Therefore, it can be seen that the precision of the second nozzle 150 can be manufactured by {second nozzle manufacturing error (<2) + second nozzle thermal expansion error (˜0) <2 um}.

FIG. 5A is a view schematically showing a state in which a deposition material is being deposited in the thin film deposition apparatus according to the exemplary embodiment of the present invention, and FIG. 5B is a shade generated when the deposition space is separated by a barrier wall as shown in FIG. 5A. FIG. 5C is a diagram illustrating a shadow that occurs when the deposition space is not separated.

Referring to FIG. 5A, the deposition material vaporized from the deposition source 110 is deposited on the substrate 160 through the first nozzle 120 and the second nozzle 150. At this time, since the space between the first nozzle 120 and the second nozzle 150 is partitioned by the blocking walls 131, the deposition from the respective first slits 121 of the first nozzle 120 is deposited. The material is not mixed with the deposition material from another first slit by the blocking wall 131 from the first slit 121 to the region where the blocking wall 131 is disposed. However, deposition materials may be mixed in a space where the second nozzle 150 and the barrier wall 131 are spaced apart from each other. In this case, the deposition materials released from the second slits adjacent to each other are only mixed, and the deposition materials released from the second slits not adjacent to each other are not mixed.

When the space between the first nozzle 120 and the second nozzle 150 is partitioned by the blocking walls 131, the gap between the adjacent first blocking walls 131 and the adjacent second blocking wall 141 are provided. By controlling the distance between them, it is possible to control the angle between the path that the deposition material moves and the second nozzle 150. That is, as the distance between the adjacent first blocking walls 131 and the distance between the adjacent second blocking walls 141 decreases, as illustrated in FIG. 5B, the deposition materials are substantially perpendicular to the second nozzle 150. Passed through is deposited on the substrate 160. In addition, as the distance between the adjacent first blocking walls 131 and the distance between the adjacent second blocking walls 141 increases, the angle between the movement path of the deposition materials and the second nozzle 150 may be reduced. At this time, the width SH1 of the shaded region generated in the substrate 160 is determined by the following equation (1).

SH ₁ = s * d _s / h

On the other hand, when the space between the first nozzle and the second nozzle is not partitioned by the barrier walls, as shown in FIG. 5C, the deposition materials pass through the second nozzle at various angles in a wider range than in FIG. 5B. Done. That is, in this case, not only the deposition material radiated from the first slit directly above the second slit, but also the deposition materials radiated from the other first slit are deposited on the substrate 160 through the second slit 151. The width of the shaded area SH ₂ formed in the substrate 160 becomes very large as compared with the case where the blocking plate is provided. In this case, the width SH ₂ of the shaded region generated in the substrate 160 is determined by Equation 2 below.

SH ₂ = s * 2d / h

When comparing Equation 1 and Equation 2, since d (interval between neighboring blocking walls) is formed to be much larger than several times to several tens more than d _s (width of the first slit), the first nozzle 120 It can be seen that when the space between the second nozzle 150 is partitioned by the barrier walls 131, the shading is much smaller. Here, in order to reduce the width SH ₂ of the shaded area generated in the substrate 160, (1) reduce the interval (d) of installing the barrier wall 131 or (2) the second nozzle 140. The distance between the substrate 160 and the substrate 160 should be reduced (s reduced) or (3) the height of the barrier wall 131 should be increased (h increased).

As such, by providing the barrier wall 131, the shadow generated on the substrate 160 is reduced, and thus the second nozzle 150 can be separated from the substrate 160.

In detail, in the thin film deposition apparatus 100 according to the exemplary embodiment of the present invention, the second nozzle 150 is formed to be spaced apart from the substrate 160 to some extent. In other words, in the conventional FMM deposition method, the deposition process was performed by closely attaching a mask to the substrate in order to prevent shadows on the substrate. However, when the mask is in close contact with the substrate as described above, there has been a problem that a defect problem occurs due to contact between the substrate and the mask. In order to solve such a problem, in the thin film deposition apparatus 100 according to the exemplary embodiment of the present invention, the second nozzle 150 is disposed to be spaced apart from the substrate 160, which is a vapor deposition object, at a predetermined interval. This can be realized by providing the barrier wall 131, whereby the shadow generated on the substrate 160 is reduced.

According to the present invention as described above, an effect of preventing a defect due to contact between the substrate and the mask can be obtained. In addition, since the time for bringing the substrate into close contact with the mask is unnecessary in the step, an effect of increasing the manufacturing speed can be obtained.

6 is a view showing thickness uniformity of thin films deposited by a deposition apparatus according to an embodiment of the present invention.

FIG. 6A illustrates the uniformity of the deposited thin film when the blocking wall 131 coincides with the direction in which the second slits 151 are arranged, that is, the direction perpendicular to the Y-axis direction. In detail, the thickness uniformity of the thin films deposited through the region partitioned by the neighboring barrier wall 131 is shown. Referring to FIG. 6A, the thickness 157a of the thin film deposited by crossing the second slit 151 perpendicular to the first slit 121 is greater than the thickness of the thin film deposited around the thin film. thick. However, the thicknesses 157b and 157c of the thin films formed on the outer portion of the region partitioned by the barrier wall 131 are thicker than the thicknesses of the thin films deposited on the periphery thereof. This is because the vapor deposition materials released in the neighboring first slits are mixed and deposited. Therefore, the thicknesses of the thin films deposited through the regions partitioned by the neighboring barrier walls 131 are shown in FIG. 6A, and the thickness distribution is repeatedly displayed.

However, according to the deposition apparatus 100 according to the embodiment of the present invention, the deposition apparatus 100 according to the embodiment of the present invention is disposed so that the barrier wall 131 is inclined as described above, so that the deposition apparatus 100 is provided. ) Or when the deposition body 160 moves in one direction (eg, Z-axis direction) and deposits a thin film, the thin films overlap each other as shown in FIG. 6 (b) (157a, 157b, and 157c). 157c, 157d, 157e, and 157f, and finally, the thickness distribution of the thin films through the area partitioned by neighboring barrier walls 131 as shown in FIG. 6 (c) becomes uniform.

As such, the present invention can uniformize the thickness of the thin film only by the inclination of the blocking wall 131 without providing a compensation plate for thickness uniformity of the thin film, thereby simplifying the manufacturing process of the deposition apparatus 100 and reducing the manufacturing cost. You can. In addition, the separate compensation plate for the uniformity of the thickness of the thin film has a problem in that the deposition rate is reduced to maintain the uniformity of the thin film in a manner that prevents deposition of the deposition material. By maintaining the uniformity of the thin film only by the slope of the) it can improve the deposition rate of the deposition material.

7 is a view showing a state in which a cooling member or the like is further provided in the thin film deposition apparatus according to the embodiment of the present invention.

As described above, the blocking wall assembly 130 may further include a cooling member 133. In detail, the barrier wall assembly 130 must maintain a significantly lower temperature than the deposition source 110. Therefore, a cooling member may be further provided to cool the blocking wall assembly 130. As an example of the cooling member, the blocking wall frame 132 may be provided with a cooling fin 133. The cooling fins 133 may protrude from the outer circumferential surface of the barrier wall frame 132 to serve to radiate and cool heat of the barrier wall assembly 130. Alternatively, although not shown in the drawing, a pipe or the like may be installed in the barrier wall assembly 130 and a water cooling method of flowing a refrigerant through the pipe may be utilized.

Meanwhile, a radiation pin 153 may be further provided on the second nozzle frame 155. In addition, a thermal shield 190 may be further provided between the deposition source 110 and the second nozzle frame 155.

In detail, since the second nozzle frame 155 does not directly face the deposition source 110 in a vacuum state, the second nozzle frame 155 does not receive radiant heat, and since the second nozzle frame 155 is not connected to the deposition source 110, the second nozzle frame 155 also has no thermal conduction. There is little room for the temperature to rise. However, since there is room for a slight temperature increase (1 to 3 °), the heat dissipation fin 153 is further provided to prevent such a temperature increase, thereby providing a temperature of the second nozzle frame 155. Can be kept constant. The heat dissipation fin 153 may protrude from an outer circumferential surface of the second nozzle frame 155 to serve to radiate and cool heat of the second nozzle frame 155. Alternatively, a thermal shield 190 is provided between the deposition source 110 and the second nozzle frame 155 to block heat radiated from the deposition source 110 to the second nozzle frame 155. Thereby, the temperature of the 2nd nozzle frame 155 can also be kept constant.

Although the present invention has been described with reference to the embodiments shown in the drawings, this is merely exemplary, and it will be understood by those skilled in the art that various modifications and equivalent other embodiments are possible. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

1 is a perspective view schematically showing a deposition apparatus according to a preferred embodiment of the present invention.

FIG. 2 is a side view schematically illustrating the deposition apparatus of FIG. 1.

3 is a plan view schematically illustrating the deposition apparatus of FIG. 1.

4 is a longitudinal cross-sectional view schematically illustrating the barrier walls illustrated in FIG. 1.

5A is a view schematically showing a state in which a deposition material is being deposited in the thin film deposition apparatus according to the exemplary embodiment of the present invention.

FIG. 5B is a diagram illustrating a shadow generated in a state where the deposition space is separated by a barrier wall as shown in FIG. 5A.

FIG. 5C is a diagram illustrating shadows occurring when the deposition space is not separated. FIG.

6 is a view schematically showing the thickness uniformity of the thin films deposited by the thin film deposition apparatus according to the embodiment of the present invention.

7 is a view showing a state in which a cooling member or the like is further provided in the thin film deposition apparatus according to the embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

100: thin film deposition apparatus 110: deposition source

120: first nozzle 130: barrier wall assembly

131: barrier wall 132: barrier wall frame

150: second nozzle 155: second nozzle frame

160: substrate

Claims (39)

In the thin film deposition apparatus for forming a thin film on one surface of the deposit while moving on the deposit, Evaporation source; A first nozzle and a second nozzle provided at one side of the deposition source and disposed to face each other; And And a blocking wall assembly including a plurality of blocking walls disposed between the first nozzle and the second nozzle, And the second nozzle is disposed to be spaced apart from the deposition target by a predetermined distance, and the plurality of blocking walls are disposed to be inclined with respect to the moving direction of the thin film deposition apparatus. The method of claim 1, The inclination angle of the plurality of blocking walls with respect to the moving direction is an acute angle. The method of claim 1, And the inclination angle of the plurality of blocking walls with respect to the moving direction is about 1 ° to 10 °. The method of claim 1, The deposition material vaporized from the deposition source is deposited through the first nozzle and the second nozzle is deposited on the deposition target. The method of claim 1, The thin film deposition apparatus, characterized in that the plurality of barrier walls are arranged at equal intervals. The method of claim 1, And the blocking walls and the second nozzle are formed to be spaced apart at a predetermined interval. The method of claim 1, Thin film deposition apparatus, characterized in that the barrier member is further provided with a cooling member. The method of claim 6, And the cooling member is a cooling fin protruding from an outer circumferential surface of the barrier wall assembly. The method of claim 1, The thin film deposition apparatus further comprises a second nozzle frame coupled to the second nozzle to support the second nozzle. The method of claim 9, And the temperature of the second nozzle frame is maintained substantially uniform during the deposition process. The method of claim 9, Thin film deposition apparatus, characterized in that the second nozzle frame is further provided with a heat radiation fin. The method of claim 9, The thin film deposition apparatus, characterized in that a heat shield plate is disposed between the deposition source and the second nozzle frame. The method of claim 1, And the barrier wall assembly is formed to be separated from the thin film deposition apparatus. The method of claim 1, The first nozzle is formed with a plurality of first slits in one direction, The second nozzle is a thin film deposition apparatus, characterized in that a plurality of second slits are formed along the one direction. The method of claim 14, And the plurality of blocking walls are disposed along the one direction to partition a space between the first nozzle and the second nozzle. The method of claim 14, The thin film deposition apparatus of claim 1, wherein at least one first slit is disposed between two adjacent barrier walls among the plurality of barrier walls. The method of claim 14, And a plurality of second slits are disposed between two adjacent blocking walls of the plurality of blocking walls. The method of claim 14, And the width of the second nozzle in the one direction and the width of the vapor deposition body in the one direction are substantially the same. The method of claim 14, And the second nozzle is disposed substantially parallel to the deposition target. Evaporation source; A first nozzle provided at one side of the deposition source and having a plurality of first slits in one direction; A second nozzle disposed to face the deposition source and having a plurality of second slits formed along the one direction; And And a blocking wall assembly having a plurality of blocking walls disposed along the one direction to partition a space between the first nozzle and the second nozzle. And the plurality of blocking walls are disposed to be inclined in the one direction. The method of claim 20, Thin film deposition apparatus, characterized in that the direction of the longitudinal cross-section of each of the plurality of blocking walls and the one direction is not perpendicular to each other. The method of claim 20, And an angle between a direction of a longitudinal section of each of the plurality of blocking walls and the one direction is an acute angle. The method of claim 22, And an angle between a direction of a longitudinal section of each of the plurality of barrier walls and the one direction is about 90 ° to about 99 °. The method of claim 20, The thin film deposition apparatus of claim 1, wherein the plurality of barrier walls are arranged at equal intervals. The method of claim 20, The thin film deposition apparatus of claim 1, wherein at least one first slit is disposed between two adjacent barrier walls among the plurality of barrier walls. The method of claim 20, And a plurality of second slits are disposed between two adjacent blocking walls of the plurality of blocking walls. The method of claim 20, And the number of the second slits is greater than the number of the first slits disposed between two neighboring blocking walls among the plurality of blocking walls. The method of claim 20, And the total number of the second slits is greater than the total number of the first slits. The method of claim 20, And the blocking walls and the second nozzle are spaced apart from each other at a predetermined interval. The method of claim 20, Thin film deposition apparatus, characterized in that the barrier member is further provided with a cooling member. 31. The method of claim 30, And the cooling member is a cooling fin protruding from an outer circumferential surface of the barrier wall assembly. The method of claim 20, The thin film deposition apparatus further comprises a second nozzle frame coupled to the second nozzle to support the second nozzle. 33. The method of claim 32, And the temperature of the second nozzle frame is maintained substantially uniform during the deposition process. 33. The method of claim 32, Thin film deposition apparatus, characterized in that the second nozzle frame is further provided with a heat radiation fin. 33. The method of claim 32, The thin film deposition apparatus, characterized in that a heat shield plate is disposed between the deposition source and the second nozzle frame. The method of claim 20, And the barrier wall assembly is formed to be separated from the thin film deposition apparatus. The method of claim 20, The thin film deposition apparatus is provided in the vacuum chamber. The method of claim 20, The second nozzle is a thin film deposition apparatus, characterized in that formed to be spaced apart from the deposition to be deposited vapor deposition material vaporized in the deposition source at a predetermined interval. According to claim 1, And the first barrier wall assembly is spaced apart from the first nozzle.

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