KR20100112070A - Method for forming an amorphous carbon layer and method for forming a pattern using the same - Google Patents

Abstract

PURPOSE: A method for forming an amorphous carbon film and a method for forming patterns using the same are provided to manufacture a semiconductor device including fine patterns using an amorphous carbon film with the superior planarity as a hard mask film. CONSTITUTION: A susceptor(12) is located in a depositing chamber(10) in order to support a substrate. A guide ring(14) is located on the edge side of the susceptor in order to guide the substrate. A heater(16) is located in the susceptor. A shower head(18) is located to be opposite with the susceptor and is connected with a depositing gas supplying unit(22) which is located on the outside of the depositing chamber. High frequency power(20) is connected with the shower head.

Description

Method for forming an amorphous carbon layer and method for forming a pattern using the same}

The present invention relates to an amorphous carbon film forming method and a pattern forming method using the same. More specifically, the present invention relates to a method of forming an amorphous carbon film suitable for use as a hard mask and a pattern forming method using the same.

In general, as the degree of integration of semiconductor devices increases, a pattern forming method having a fine line width and spacing becomes important. In particular, in the case of the photoresist pattern, since the etching resistance is not large, there is a limit to use as an etching mask pattern. Therefore, a hard mask pattern made of a material having relatively high etching resistance is used as an etching mask pattern.

However, in the process of forming a hard mask film, excessive stress is applied to the substrate, causing problems such as bending of the substrate. In particular, in large diameter substrates having a diameter of 300 mm, the problem of bending of the substrate is more serious. In addition, it is not easy to form a hard mask film having high flatness in the entire substrate region. Moreover, it is not easy to form a hard mask pattern having a high etching selectivity.

An object of the present invention is to provide a method for forming an amorphous carbon film suitable for use as a hard mask film and having a low stress.

Another object of the present invention is to provide a method of forming a pattern using the amorphous carbon film.

In the amorphous carbon film forming method according to an embodiment of the present invention for achieving the above object, the substrate is placed in the deposition chamber. Next, by performing a plasma deposition process of introducing a reactive gas containing hydrocarbons, a carrier gas and at least one regulating gas selected from the group consisting of oxygen and carbon oxide in the chamber at a temperature in the range of 400 to 500 ° C., An amorphous carbon film is formed on the substrate while suppressing warpage of the substrate.

In one embodiment of the present invention, the total amount of gas introduced into the chamber per unit time in the process of forming the amorphous carbon film may be 1% to 20% of the volume of the chamber.

In one embodiment of the present invention, the ratio of the reaction gas and the control gas may be 20: 1 to 2: 1.

In one embodiment of the present invention, the ratio of carbon and hydrogen included in the hydrocarbon may be 1: 2 to 1: 5.

In one embodiment of the present invention, the carbon oxide may include carbon monoxide or carbon dioxide.

In one embodiment of the present invention, by adjusting the temperature of the substrate within the temperature range, it is possible to be adjusted so that the substrate is bent in the tensile direction or the compression direction, or the substrate is in a flat state.

More specifically, the substrate may be bent in the compression direction by raising the temperature of the substrate within the temperature range. Alternatively, by lowering the temperature of the substrate within the temperature range it may be adjusted to bend the substrate in the tensile direction.

In one embodiment of the present invention, by controlling the amount of the control gas flowing into the chamber, it is possible to adjust the absorption coefficient (k) of the amorphous carbon film.

More specifically, the absorption coefficient of the amorphous carbon film may be increased by increasing the amount of control gas introduced into the chamber. Alternatively, the absorption coefficient of the amorphous carbon film may be lowered by reducing the amount of control gas introduced into the chamber.

In one embodiment of the present invention, the carbon oxide may include carbon monoxide or carbon dioxide.

In the amorphous carbon film forming method according to an embodiment of the present invention for achieving the above another object, in the deposition chamber, the substrate on which the etching target film is deposited. In the temperature range of 400 to 500 ° C, warpage of the substrate is suppressed through a plasma deposition process using a reactive gas containing a hydrocarbon in the chamber, a carrier gas, and at least one regulating gas selected from the group consisting of oxygen and carbon oxide. While forming an amorphous carbon film on the etching target film. A photoresist pattern is formed on the amorphous carbon film. The amorphous carbon film is etched using the photoresist pattern to form an amorphous carbon film pattern. The etching target layer is etched using the amorphous carbon film pattern to form a thin film pattern.

In one embodiment of the present invention, the etching target layer may be silicon oxide, single crystal silicon, silicon nitride, SiOC, SiON.

In one embodiment of the present invention, the thin film pattern may be used as an etching mask pattern for etching the underlying film formed under the thin film pattern.

The base film may be a conductive film or a silicon oxide film.

By etching the underlying film using the thin film pattern, a conductive film pattern, a contact hole, or a trench can be formed.

In one embodiment of the present invention, a silicon oxynitride film and an antireflective coating film may be formed between the carbon film and the photoresist film.

In an embodiment, the method may further include removing the amorphous carbon film pattern remaining on the thin film pattern.

In one embodiment of the present invention, the total amount of gas introduced into the chamber per unit time in the process of forming the amorphous carbon film may be 1 to 20% of the volume of the chamber.

In one embodiment of the present invention, the ratio of the reaction gas and the control gas may be 20: 1 to 2: 1.

In one embodiment of the present invention, by adjusting the temperature of the substrate within the temperature range, it is possible to be adjusted so that the substrate is bent in the tensile direction or the compression direction, or the substrate is in a flat state.

In one embodiment of the present invention, by controlling the amount of the control gas flowing into the chamber, the absorption coefficient of the amorphous carbon film can be adjusted.

As described, according to the amorphous carbon film forming method of the present invention, warping of the substrate is suppressed. According to the method, it is possible to form an amorphous carbon film having a refractive index and an absorption coefficient at a level desired by a user. In addition, the amorphous carbon film may be formed at a high deposition rate. Moreover, the amorphous carbon film formed by the above method has high flatness in the entire region of the substrate.

Therefore, the amorphous carbon film formed by the method of the present invention is very suitable for use as a hard mask film. Therefore, by using the amorphous carbon film as a hard mask film, a thin film pattern of a semiconductor device having a fine line width can be formed. In addition, warpage of the substrate is reduced to reduce focus defects in the photolithography process, thereby reducing defects such as unetched or over-etched when forming the thin film pattern.

As described above, by using the amorphous carbon film having high flatness, a semiconductor device having a fine pattern can be formed, and process defects can be reduced when the semiconductor device is manufactured.

1 is a cross-sectional view showing a deposition apparatus having a structure suitable for forming an amorphous carbon film according to the present invention.
2 is a flowchart illustrating a method of forming an amorphous carbon film according to an embodiment of the present invention.
3 to 8 are cross-sectional views showing a pattern forming method according to an embodiment of the present invention.
9 shows the thickness of the amorphous carbon film measured at each position of the substrate in Sample 3 and Comparative Samples 2 and 3. FIG.
FIG. 10 is an intensity of diamond / graphite (hereinafter, D / G) measured in each of the amorphous carbon films of Sample 3 and Comparative Samples 2 and 3.
12 is the thickness of the amorphous carbon film in Comparative Samples # 1 to # 7 formed under the same conditions as those shown in Table 3. FIG.
13 is an extinction coefficient of an amorphous carbon film in Comparative Samples # 1 to # 7 formed under the same conditions as those shown in Table 3. FIG.
FIG. 14 shows absorbance coefficients measured in each sample when the amorphous carbon films were formed under the same conditions as those shown in Table 4. FIG.
15 to 18 are cross-sectional views illustrating a method of forming a pattern according to another exemplary embodiment of the present invention.
19 to 22 are cross-sectional views illustrating a method of forming a pattern according to another exemplary embodiment of the present invention.
23 to 27 are cross-sectional views illustrating a method of manufacturing a DRAM device according to an embodiment of the present invention.
28 illustrates a semiconductor device including memory elements fabricated according to the method of one embodiment of the present invention.
29 illustrates a portable device including a memory device manufactured according to an embodiment of the present invention.
30 illustrates a semiconductor device including memory elements fabricated according to the method of one embodiment of the present invention.
31 illustrates a semiconductor device including memory elements fabricated according to the method of one embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

In the present invention, like reference numerals are used for like elements in describing the drawings. In the accompanying drawings, the dimensions of the structures are shown in an enlarged scale than actual for clarity of the invention.

In the present invention, the terms first, second, etc. may be used to describe various elements, but the elements should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

In the present invention, each layer (film), region, electrode, pattern or structures is formed on, "on" or "bottom" of the object, substrate, each layer (film), region, electrode or pattern. When referred to as being meant that each layer (film), region, electrode, pattern or structure is formed directly over or below the substrate, each layer (film), region or patterns, or other layer (film) Other regions, different electrodes, different patterns, or different structures may be additionally formed on the object or the substrate.

For the embodiments of the invention disclosed herein, specific structural and functional descriptions are set forth for the purpose of describing an embodiment of the invention only, and it is to be understood that the embodiments of the invention may be practiced in various forms, But should not be construed as limited to the embodiments set forth in the claims.

As the inventive concept allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the text. However, this is not intended to limit the present invention to the specific disclosed form, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention.

1 is a cross-sectional view showing a deposition apparatus having a structure suitable for forming an amorphous carbon film according to the present invention.

Referring to FIG. 1, a deposition chamber 10 is provided. The susceptor 12 for supporting the substrate W is provided in the deposition chamber 10. The edge portion of the susceptor 12 is provided with a guide ring 14 for guiding the substrate (W). In addition, the susceptor 12 is provided with a heater 16, so that the substrate (W) can be adjusted to a specific temperature.

Opposing the susceptor 12, a shower head 18 is provided. The shower head 18 is connected to the deposition gas supply part 22 provided outside the chamber 10. In addition, the deposition gas supplied from the deposition gas supply unit 22 is introduced onto the substrate W through the gas outlets generated in the shower head 18. A high frequency power source 20 is connected to the shower head 18, and the deposition gases may be in a plasma state by the power supplied from the high frequency power source 20.

In addition, the deposition chamber 10 is provided with a vacuum pump (not shown), and the gases are exhausted out of the chamber.

Example 1

2 is a flowchart illustrating a method of forming an amorphous carbon film according to an embodiment of the present invention.

1 and 2, first, the substrate W is positioned in the chamber 10 of the deposition apparatus. (S10) An etching target layer may be deposited on the substrate W. The etching target layer may be, for example, silicon oxide, silicon nitride, silicon oxide, single crystal silicon, silicon nitride, SiOC, or SiON. These may be deposited alone, or two or more may be laminated. Alternatively, the substrate itself made of single crystal silicon may be an etching target film.

The substrate W is positioned on the susceptor 12 in the chamber 10. It is preferable that the susceptor 12 is heated at the process temperature at the time of a vapor deposition process. That is, the susceptor 12 maintains a constant temperature within the temperature range of 400 to 500 ℃. In addition, a high frequency power source 20 is applied to the shower head 18.

Next, in the temperature range of 400 to 500 ° C, a deposition gas containing a hydrocarbon (CxHy), a carrier gas, and a control gas selected from the group consisting of oxygen and carbon oxide are introduced into the chamber 10. As a result, an amorphous carbon film is formed on the substrate (W). That is, in the process of forming the amorphous carbon film, a control gas is further introduced in addition to the deposition gas and the carrier gas. (S12)

Hereinafter, a deposition process for forming the amorphous carbon film will be described in more detail.

In the present embodiment, the deposition temperature in the deposition process is 400 to 500 ℃.

When the deposition process is performed at a temperature lower than 400 ° C., excessive tensile stress is generated in the amorphous carbon film. Therefore, the substrate is largely bent in the tensile direction. In addition, when the deposition process is performed at a temperature higher than 500 ° C., excessive compressive stress is generated in the amorphous carbon film. Therefore, the substrate is largely bent in the compression direction.

However, as in this embodiment, when performing the deposition process in the temperature range of 400 to 500 ℃, the stress on the substrate is greatly reduced. In detail, when the deposition process is performed at a temperature of 400 ° C. to 430 ° C., the tensile stress is slightly generated in the amorphous carbon film, so that the substrate may be somewhat curved in the tensile direction. On the other hand, in the case of performing the deposition process at a temperature of 480 ℃ to 430 ℃, a slight compressive stress is generated in the amorphous carbon film may be bent in the compression direction. However, since the degree of warpage of the substrate is very weak, problems due to the warpage of the substrate are hardly generated. In addition, at the temperature of 430 to 470 ° C, the stress applied to the substrate is almost eliminated, and thus the substrate is hardly bent.

As such, by adjusting the temperature during the deposition process, the degree of warpage of the substrate may be adjusted, and in particular, the stress applied to the substrate may be reduced to about zero.

Therefore, even after the amorphous carbon film is formed, the substrate may have a flat state without being bent. Particularly, even when the substrate is a large diameter substrate having a diameter of 300 mm, when the deposition process is performed in the temperature range, the substrate may be maintained in a flat state with little bending. Because of this, process defects generated as the substrate is warped can be greatly reduced.

As described above, in the deposition process, hydrocarbon (CxHy) and a carrier gas are used, and in addition, a control gas including at least one of oxygen and carbon oxide is used. The carbon oxide may include CO or CO ₂ .

The hydrocarbon is a deposition source gas for forming the amorphous carbon film. Hydrocarbons suitable for forming the amorphous carbon film have a ratio of carbon to hydrogen of 1: 2 to 1: 5. More specifically, the hydrocarbon may be an ethylene-based hydrocarbon, for example, C ₃ H ₆ It can be used.

The carrier gas is a gas that moves the hydrocarbons and the regulating gases into the chamber and regulates the atmosphere within the chamber. The carrier gas may use an inert gas such as helium or argon, and in this embodiment, helium is used.

When the hydrocarbon and the carrier gas are 1: 1.5 or more, and the carrier gas is excessively introduced, the reaction of carbon is hindered, which is not preferable. In addition, when the hydrocarbon and the carrier gas are 1: 0.7 or less and the carrier gas is small, the hydrocarbon is hardly introduced into the chamber, which is not preferable. Therefore, the hydrocarbon and the carrier gas are preferably introduced into the chamber at a ratio of 1: 0.7 to 1: 1.5.

The regulating gas controls the carbon bonding component of the amorphous carbon film to be deposited, and the refractive index and the extinction coefficient of the amorphous carbon film. The extinction coefficient of the amorphous carbon film is related to the etching selectivity of the amorphous carbon film. Specifically, when the absorption coefficient of the amorphous carbon film is lowered, the etching selectivity with the etching target film is lowered.

Increasing the addition amount of the control gas increases the absorption coefficient of the amorphous carbon film. On the contrary, when the addition amount of the control gas is reduced, the absorption coefficient of the amorphous carbon film is lowered. In this way, the absorption coefficient of the amorphous carbon film can be adjusted to 0.1 to 1 in accordance with the amount of the oxygen gas. As described above, the inflow ratio of the hydrocarbon and the regulating gas for adjusting the extinction coefficient to 0.1 to 1 may be 20: 1 to 2: 1.

Typically, the amorphous carbon film requires an absorption coefficient of about 0.41 to 0.42 in order to have an etching selectivity with silicon oxide and an etching selectivity with single crystal silicon. In order to have the extinction coefficient, the inflow ratio of the hydrocarbon and the regulating gas may be 5: 1 to 2: 1.

As the regulating gas is introduced, the carbon bonding structure is further increased during the plasma reaction of the hydrocarbon, so that the film becomes more dense, thereby increasing the etching selectivity.

According to the total inflow of the hydrocarbon, helium and the control gas, there is a big difference in the film quality, flatness, deposition rate, etc. of the amorphous carbon film deposited. This is because the amount of reaction by-products generated and the recombination rate of the reaction by-products vary according to the total inflow of hydrocarbon, helium and the control gas. In addition, depending on the total inflow of hydrocarbons, helium and the control gas, the degree of generation of vortex in the region of the chamber is different. As a result, the degree of introduction of the deposition gas into each position of the substrate is changed due to the vortex generation, and the thickness of the amorphous carbon film is changed from each position of the substrate.

If the total inflow rate per unit time of the deposition gas consisting of the hydrocarbon, helium and the control gas is greater than 20% of the volume of the chamber, the deposition rate of the amorphous carbon film is reduced to reduce productivity. In addition, in some regions of the chamber, for example, a portion where the deposition gas is exhausted, a large amount of vortex of the deposition gas is generated, resulting in poor uniformity of the amorphous carbon film. In addition, if the total inflow rate per unit time of the deposition gas consisting of the hydrocarbon, helium and the control gas is less than 1% of the chamber volume, the deposition gas is too small to deposit the amorphous carbon film normally.

Therefore, it is preferable that the total inflow amount per unit time of the deposition gas which consists of said hydrocarbon, helium, and a control gas is 1%-20% of the volume of a chamber. More preferably, the total inflow rate per unit time of the deposition gas is 5 to 10% of the volume of the chamber. Deposition gases introduced into the chamber during the deposition process are exhausted by pumping deposition gases out of the chamber. Therefore, when the deposition gas is introduced as described above, the deposition gas is continuously maintained in the chamber during the deposition process with 1% to 20% of the deposition volume remaining in the chamber volume.

As described above, when the total inflow rate per unit time of the deposition gas consisting of the hydrocarbon, helium and the control gas is 1 to 20% of the volume of the chamber, the deposition rate of the amorphous carbon film is increased to increase productivity. In addition, since the amount of deposition gas remaining in the chamber is not large, vortex generation is reduced, thereby increasing the uniformity of the amorphous carbon film.

Since the amount of the hydrocarbon, which is the deposition source gas of the amorphous carbon film, is reduced, the generated reaction by-products remain in the amorphous carbon film with little recombination. Therefore, as compared with the amorphous carbon film formed when the inflow amount of the deposition gas is large, when the inflow amount of the deposition gas is small, not only C = C bonds but also CH = CH bonds are contained in the amorphous carbon film. The amorphous carbon film containing a lot of CH = CH bonds has a low absorption coefficient and a low etching selectivity with silicon oxide and single crystal silicon.

However, when the regulating gas is used as oxygen, the oxygen and carbon or the oxygen and hydrogen react with the regulating gas. Therefore, more reactants such as CO ₂ , H ₂ O are produced. Therefore, the CH = CH bond in the amorphous carbon film is reduced. As such, the CH = CH bond included in the amorphous carbon film may be adjusted according to the inflow amount of the oxygen gas, thereby controlling the absorption coefficient of the amorphous carbon film and controlling the etching selectivity with silicon oxide and single crystal silicon.

In contrast, when the regulating gas is used as carbon oxide, the regulating gas reacts with hydrogen. Therefore, the CH = CH bond in the amorphous carbon film is reduced. As such, the CH = CH bond included in the amorphous carbon film may be adjusted according to the inflow amount of the carbon oxide gas, thereby controlling the absorption coefficient of the amorphous carbon film, and controlling the etching selectivity with silicon oxide and single crystal silicon. .

In addition, when carbon oxide is used as the control gas, it is possible to reduce local thickening or thinning of the amorphous carbon film formed on the substrate surface.

More specifically, when the deposition process is performed in a general-purpose plasma deposition apparatus using a 200 mm substrate, the hydrocarbon may introduce about 100 to 300 sccm. Then, the remaining carrier gas and the regulating gas may be introduced at the above-mentioned ratios. In addition, when the deposition process is performed in a universal plasma deposition apparatus using a 300 mm substrate, the hydrocarbon may flow in about 1000 to 1500 sccm. In addition, the remaining carrier gas and the regulating gas may be introduced at the above-mentioned ratios.

As described, according to the present invention, an amorphous carbon film can be formed while hardly causing warping and stress of a large diameter substrate. The amorphous carbon film formed by the above method has a very high flatness in a large diameter substrate and can be formed at a high deposition rate. In addition, the amorphous carbon film may be formed to be adjusted to have a high absorbance coefficient of a user desired level, thereby, may be formed to have a desired level of etching selectivity.

Therefore, the amorphous carbon film is very suitable for use as a hard mask film for forming patterns or contacts having a fine line width.

3 to 8 are cross-sectional views showing a pattern forming method according to an embodiment of the present invention.

In the present embodiment, a trench for device isolation will be described.

Referring to FIG. 3, an amorphous carbon film 102 is formed on a substrate 100 made of single crystal silicon. The amorphous carbon film 102 is used as a hard mask for etching the substrate 100 in a subsequent process. In this embodiment, the etching target film becomes a single crystal silicon substrate.

In another embodiment, a separate etching target layer (not shown) may be deposited on the substrate 100, and an amorphous carbon layer may be formed on the etching target layer. In this case, the etching target layer may be silicon oxide, silicon nitride, SiC, SiCN, SiON. These may be deposited alone or two or more may be laminated.

The amorphous carbon film 102 is formed through the same process as described with reference to FIG. 2. Accordingly, the substrate 100 on which the amorphous carbon film 102 is formed has almost no bend and has a flat top surface. In addition, the uniformity of the amorphous carbon film 102 formed on the substrate 100 is very excellent.

Referring to FIG. 4, a silicon oxynitride film 104 (SiON) is formed on the amorphous carbon film 102. The silicon oxynitride film 104 is provided to protect the amorphous carbon film 102 in an unetched portion in a subsequent process of etching the amorphous carbon film 102. A bottom anti-reflective coating (106, BARC) is formed on the silicon oxynitride layer 104. A photoresist film 108 is formed on the lower antireflective coating film 106. In this embodiment, since the amorphous carbon film 102 is used as an etching mask, the photoresist film 108 may be formed thin.

Referring to FIG. 5, the photoresist film 108 is patterned through a photolithography process to form a photoresist pattern 108a. Since the photoresist film 108 is thin, the photoresist pattern 108a having a narrow line width and spacing may be formed while the pattern is not collapsed.

Next, the lower antireflective coating layer 106 and the silicon oxynitride layer 104 are sequentially etched using the photoresist pattern 108a as an etch mask, thereby forming the lower antireflective coating pattern 106a and the silicon oxynitride layer pattern. Form 104a.

Referring to FIG. 6, the amorphous carbon layer is formed by using a structure (FIGS. 5 and 110) in which the silicon oxynitride layer pattern 104a, the lower anti-reflective coating pattern 106a, and the photoresist pattern 108a are stacked as an etching mask. Etch 102. Through the etching process, an amorphous carbon film pattern 102a to be used as a hard mask pattern is formed.

In this case, since the flatness of the amorphous carbon film 102 is very excellent, the thickness of the amorphous carbon film pattern 102a formed by etching the amorphous carbon film 102 is very uniform.

If, unlike the present embodiment, the thickness of the amorphous carbon film is not constant according to the position, the film may remain without etching by a certain thickness at a portion where the amorphous carbon film is formed thick. In addition, in the portion where the amorphous carbon film is thinly formed, the etching is excessively performed, and an attack may be applied to the lower layer under the amorphous carbon film. However, since the amorphous carbon film of the present embodiment is excellent in film flatness, when the etching process of the amorphous carbon film 102 is completed, the amorphous carbon film 102 is not normally etched or overetched. The carbon film pattern 102a may be formed.

When the etching process for forming the amorphous carbon film pattern 102a is performed, most of the photoresist pattern and the lower anti-reflective coating film which are not highly etch resistant are etched away, and only a part of the silicon oxynitride film pattern 104a remains.

Referring to FIG. 7, the single crystal silicon substrate 100 to be etched is etched using the amorphous carbon film pattern 102a and the silicon oxynitride film pattern 104a as an etching mask. As a result, the single crystal silicon pattern 100a is formed.

Since the amorphous carbon film pattern 102a formed as described above has a high etching selectivity with respect to the single crystal silicon, it is suitable to be used as a hard mask pattern for etching the substrate 100. Therefore, only part of the amorphous carbon film pattern 102a is removed and most of the remaining part is left while the single crystal silicon is etched.

Unlike the present embodiment, if the thickness of the amorphous carbon film pattern is not constant and varies from location to location, the substrate may not be sufficiently masked at a portion where the thickness of the amorphous carbon film is thin when the etching process is performed. As a result, a defect of the single crystal silicon pattern may be caused. However, since the amorphous carbon film pattern 102a of the present embodiment has a very constant thickness, the single crystal silicon pattern 100a may be uniformly formed through the etching process.

Referring to FIG. 8, the amorphous carbon film pattern 102a remaining on the single crystal silicon pattern 100a is removed. Removal of the amorphous carbon film pattern 102a may be performed through an ashing and stripping process.

As described, by using an amorphous carbon film pattern having a high selectivity and having a uniform height as a hard mask, a single crystal silicon pattern having a fine line width and spacing can be formed.

Stress Characteristic Test of Substrate

Sample 1

According to one embodiment of the present invention, an amorphous carbon film was formed on a 300 mm substrate. The amorphous carbon film of Sample 1 formed an amorphous carbon film through a plasma deposition process using a reaction gas C ₃ H ₆ , a carrier gas He and a control gas O ₂ as a deposition gas at a temperature of 450 ° C.

Sample 2

According to one embodiment of the present invention, an amorphous carbon film was formed on a 300 mm substrate. The amorphous carbon film of Sample 2 formed an amorphous carbon film through a plasma deposition process using a reaction gas C ₃ H ₆ , carrier gas He, and controlled gas O ₂ as a deposition gas at a temperature of 400 ° C. The deposition gas was used in the same manner as in sample 1.

Comparison sample 1

In order to compare with the present invention, an amorphous carbon film was formed on a 300 mm substrate. The amorphous carbon film of Comparative Sample 1 formed an amorphous carbon film through a plasma deposition process using a reaction gas C ₃ H ₆ , carrier gas He, and controlled gas O ₂ as a deposition gas at a temperature of 300 ° C. The deposition gas was used in the same manner as in sample 1.

The stresses generated on the substrates of Samples 1 and 2 and Comparative Sample 1 were measured and shown in Table 1.

TABLE 1

As shown in Table 1, the tensile stress was relatively large in Comparative Sample 1, and the tensile stress was very small in Samples 1 and 2.

As such, by carrying out the deposition process in the temperature range of 400 to 500 ° C., the stress could be made close to zero in a large diameter 300 mm substrate. In addition, it was possible to hardly cause warping of the substrate.

Flatness Experiment of Amorphous Carbon Film

Sample 3

According to one embodiment of the present invention, an amorphous carbon film was formed on a 200 mm substrate. The amorphous carbon film of Sample 3 was formed under the condition of flowing 165 sccm of C ₃ H ₆ gas, flowing 100 sccm of He gas, and flowing 60 sccm of oxygen at a temperature of 450 ° C.

Comparison sample 2

In order to compare with the present invention, an amorphous carbon film was formed on a 200 mm substrate. The amorphous carbon film of Comparative Sample 2 was formed under the condition of introducing 165 sccm of C ₃ H ₆ gas and introducing 100 sccm of He gas at a temperature of 450 ° C. On the other hand, oxygen did not flow in during the deposition process.

Comparison sample 3

In order to compare with the present invention, an amorphous carbon film was formed on a 200 mm substrate. The amorphous carbon film of Comparative Sample 3 was formed under the condition of flowing 700 sccm of C ₃ H ₆ gas and flowing 225 sccm of He gas at a temperature of 450 ° C. On the other hand, oxygen did not flow in during the deposition process.

In Sample 3 and Comparative Samples 2 and 3, the thickness of the amorphous carbon film was measured for each position of the substrate. That is, the thickness of the amorphous carbon film was measured for each position while changing each position to the left edge, the center, and the right edge of the substrate.

9 shows the thickness of the amorphous carbon film measured at each position of the substrate in Sample 3 and Comparative Samples 2 and 3. FIG.

Referring to FIG. 9, reference numeral 150 denotes the thickness of the amorphous carbon film measured in Sample 3, reference numeral 152 denotes the thickness of the amorphous carbon film measured in Comparative Sample 2, and reference numeral 154 denotes the amorphous carbon film measured in Comparative Sample 3. Thickness.

In Sample 3, it can be seen that the difference in thickness between the center portion and the edge portion was greatly reduced. This shows that the flatness of the amorphous carbon film of Sample 3 is the best. In particular, in Comparative Sample 3 in which the inflow amount of deposition gas was relatively large, the thickness difference between the center portion and the edge portion was very large. As a result, it was found that the flatness becomes poor as the inflow amount of the deposition gas increased.

Amorphous Carbon Film Crystallization Analysis

Raman spectrum analysis was performed on the amorphous carbon films formed on the respective substrates in Sample 3 and Comparative Samples 2 and 3.

FIG. 10 is an intensity of diamond / graphite (hereinafter, D / G) measured in each of the amorphous carbon films of Sample 3 and Comparative Samples 2 and 3.

In FIG. 10, reference numeral 210 is measured in Sample 3, 212 is measured in Comparative Sample 2, and 214 is measured in Comparative Sample 3.

Referring to FIG. 10, the amorphous carbon film of Sample 3 formed according to an embodiment of the present invention showed the highest D / G. D / G was also slightly higher in the amorphous carbon film of Comparative Sample 3, which had a relatively high inflow rate of deposition gas. On the other hand, D / G was lowest in the amorphous carbon film of Comparative Sample 2 in which the deposition gas inflow was relatively small and oxygen gas was not introduced.

As a result, it can be seen that, when the inflow amount of the deposition gas is small, the degree of crystallinity is lower than when the inflow amount of the deposition gas is large. However, it was found that even if the inflow amount of the deposition gas is small, the degree of crystallinity can be increased by introducing oxygen gas as in the present invention. In this way, by increasing the crystallinity of the amorphous carbon film, the amorphous carbon film can be formed more densely.

Characteristic test of amorphous carbon film

Sample 4

According to one embodiment of the present invention, an amorphous carbon film was formed on a 300 mm substrate. The amorphous carbon film of Sample 4 was formed under the condition of introducing 1200 sccm of C ₃ H ₆ gas, introducing 1000 sccm of He gas, and introducing 90 sccm of oxygen gas at a temperature of 400 ° C.

Sample 5

According to one embodiment of the invention, an amorphous carbon film was formed on a 300 mm substrate. The amorphous carbon film of Sample 5 was formed under the condition of introducing 1200 sccm of C ₃ H ₆ gas, 1000 sccm of He gas, and 90 sccm of CO ₂ at a temperature of 400 ° C.

Table 2 shows the characteristics of the amorphous carbon films of Samples 4 and 5.

TABLE 2

As in Table 2, Sample 4 and Sample 5 have good warping characteristics.

The thickness range is the thickness difference between the highest and low thickness in each sample. The thickness ranges of samples 4 and 5 are small, within 5% of the average thickness. That is, samples 4 and 5 are neither locally high nor low in thickness. In particular, for sample 5 the thickness range is small, within about 3% of the average thickness.

Etch Resistance Experiments of Amorphous Carbon Membranes

Sample 6

According to an embodiment of the present invention, a silicon nitride film was formed on a 300 mm substrate with a thickness of 2000 mm 3. An amorphous carbon film was formed on the silicon nitride film. The amorphous carbon film was formed under a condition of introducing 1200 sccm of C ₃ H ₆ gas, introducing 1000 sccm of He gas, and introducing 90 sccm of CO ₂ at a temperature of 400 ° C. In addition, the amorphous carbon film is patterned to form an amorphous carbon film pattern. Thereafter, using the amorphous carbon film pattern as an etching mask, the exposed silicon nitride film was accurately etched to remove the silicon nitride film. As a result, a silicon nitride film pattern was formed.

Comparison sample 4

In order to compare with the present invention, a silicon nitride film was formed on a 300 mm substrate with a thickness of 2000 mm 3. An amorphous carbon film was formed on the silicon nitride film. The amorphous carbon film was formed under a condition of introducing 1200 sccm of C ₃ H ₆ gas and introducing 1000 sccm of He gas at a temperature of 400 ° C. In addition, the amorphous carbon film is patterned to form an amorphous carbon film pattern. Thereafter, using the amorphous carbon film pattern as an etching mask, the exposed silicon nitride film was accurately etched to remove the silicon nitride film. As a result, a silicon nitride film pattern was formed.

FIG. 11 illustrates thicknesses of amorphous carbon films measured at respective positions of a substrate in Sample 6 and Comparative Sample 4. FIG.

Referring to FIG. 11, reference numeral 160a denotes a thickness and an average thickness of each amorphous carbon film pattern of the amorphous carbon film pattern measured in Sample 6, and reference numeral 162a denotes a thickness and an average of each amorphous substrate film pattern of the amorphous carbon film pattern measured in Comparative Sample 4 Thickness. Reference numeral 160b denotes the thickness and average thickness of each substrate in which the amorphous carbon film pattern and the silicon nitride film are combined in Sample 6, and reference numeral 162b denotes the thickness and average thickness of each substrate in which the amorphous carbon film pattern and the silicon nitride film pattern in the Comparative Sample 4 are added. to be. Each position of the substrate measured is the center portion CEN, the bottom portion BOT, the center and the bottom portion B / M of the substrate.

After performing the etching process, the amorphous carbon film pattern remaining in Sample 6 was about 800 mm 3. On the other hand, the amorphous carbon film pattern remaining in Comparative Sample 4 was about 700 GPa. In addition, after performing the etching process, the sum of the thicknesses of the amorphous carbon film pattern and the silicon nitride film pattern remaining in Sample 6 was about 2900 mm 3. On the other hand, the sum of the thicknesses of the amorphous carbon film pattern and the silicon nitride film pattern remaining in Comparative Sample 4 was about 2800 mm 3.

As such, it was found that the sample 6 had a thicker amorphous carbon film pattern remaining after etching than the comparative sample 4. That is, it was found that the etching resistance of the amorphous carbon film formed by including CO in the deposition gas was better. Therefore, it can be seen that it is more suitable for use as a hard mask for etching the underlayer.

For each of the samples, the thicknesses of the amorphous carbon film pattern and the silicon nitride film pattern, as well as the thickness of the amorphous carbon film pattern, respectively, were measured to reduce the error on the thickness measurement and to compare the thickness variation with each other.

In addition, as shown in FIG. 11, it can be seen that the sample 6 has a smaller difference in thickness of the amorphous carbon film pattern for each position of the substrate than the comparative sample 4. Similarly, it can be seen that the sample 6 has a smaller difference in the sum of the thicknesses of the amorphous carbon film pattern and the silicon nitride film pattern for each position of the substrate than the comparative sample 4. That is, the sample 6 has a uniform thickness of the amorphous carbon film pattern for each position of the substrate when compared with the comparative sample 4.

Comparison of Deposition Rate and Absorption Coefficient of Amorphous Carbon Films

On the 200 mm substrate, as shown in Table 2, deposition gas was introduced under various conditions to form an amorphous carbon film. In addition, after performing the deposition process by introducing the deposition gas as described above for the same time, the thickness of the amorphous carbon film according to the deposition gas inflow amount was compared. This experiment was conducted to investigate the relationship between the deposition gas inflow rate and the deposition rate of the amorphous carbon film. All the comparative samples were deposited with the amorphous carbon film under the condition that oxygen was not introduced.

[Table 3]

When each amorphous carbon film was formed under the conditions as described in Table 3, the amorphous carbon film thickness was measured in each of the comparative samples. In addition, the extinction coefficient was measured in each sample.

12 is the thickness of the amorphous carbon film in Comparative Samples # 1 to # 7 formed under the same conditions as those shown in Table 3. FIG. 13 is an extinction coefficient of an amorphous carbon film in Comparative Samples # 1 to # 7 formed under the same conditions as those shown in Table 3. FIG.

Referring to FIG. 12, it can be seen that the thickness of the film decreases as the amount of the deposition source gas C ₃ H ₆ increases. When the amount of C ₃ H ₆ gas is the same, it can be seen that the deposition thickness is somewhat changed depending on the amount of helium gas, which is a carrier gas. That is, it was found that the deposition rate of the amorphous carbon film increased as the amount of helium gas increased.

13, it can be seen that the absorption coefficient decreases as the amount of C ₃ H ₆ , which is a deposition source gas, decreases.

As described, it was found that when the amount of C ₃ H ₆ was decreased to increase the deposition rate of the film, the absorption coefficient of the film was lowered. For example, in the case of Sample # 7, an amorphous carbon film was formed at a high deposition rate of 1900 mW / min, but the amorphous carbon film had a low extinction coefficient of about 0.37, so that the etching selectivity was not high. Therefore, the amorphous carbon film was not suitable for use as a hard mask pattern.

Experiment of extinction coefficient control using oxygen

On a 200 mm substrate, deposition gas was introduced as shown in Table 3 to form amorphous carbon films according to an embodiment of the present invention, respectively.

[Table 4]

When each of the amorphous carbon films was formed under the conditions as described in Table 4, the extinction coefficient was measured in each sample.

FIG. 14 shows absorbance coefficients measured in each sample when the amorphous carbon films were formed under the same conditions as those shown in Table 4. FIG.

Referring to FIG. 14, as in the embodiment of the present invention, under the condition that the flow rates of the deposition source gas and the carrier gas are reduced, it can be seen that the absorption coefficient increases as the amount of the oxygen gas is increased. Therefore, by reducing or increasing the amount of the oxygen gas, the extinction coefficient can be adjusted.

Example 2

15 to 18 are cross-sectional views illustrating a method of forming a pattern according to another exemplary embodiment of the present invention.

In this embodiment, the gate electrode is described.

Referring to FIG. 15, a gate insulating film 202 and a gate conductive film 204 are formed on a substrate 200 made of single crystal silicon. As the gate insulating layer 202, a silicon oxide layer may be used. In addition, the gate conductive layer 204 may use a semiconductor material such as polysilicon or a metal material such as tungsten.

A silicon nitride film 206 is formed on the gate conductive film 204. The silicon nitride layer 206 may serve as an etching mask for etching the gate conductive layer 204.

An amorphous carbon film 208 is formed on the silicon nitride film 206. The amorphous carbon film 208 is used as a hard mask for etching the silicon nitride film 206 in a subsequent process. That is, in this embodiment, the etching target film is a silicon nitride film.

The amorphous carbon film 208 is formed through the same process as described with reference to FIG. 2. Therefore, even when the amorphous carbon film 208 is formed on the silicon nitride film 206, the substrate 200 hardly bends. In addition, the uniformity of the amorphous carbon film 208 formed on the silicon nitride film 206 is very excellent.

Referring to FIG. 16, a silicon oxynitride film (not shown) and a lower anti-reflective coating film (not shown) are sequentially formed on the amorphous carbon film 208. A photoresist pattern (not shown) is formed on the lower antireflective coating layer. The photoresist pattern has a shape in which lines and spaces are repeated.

Thereafter, the lower antireflective coating layer and the silicon oxynitride layer are sequentially etched to form the silicon oxynitride layer pattern 210a and the lower antireflective coating pattern (not shown).

Subsequently, the amorphous carbon film 208 below is etched. Through the etching process, an amorphous carbon film pattern 208a to be used as a hard mask pattern is formed. During the etching process, most of the anti-reflection coating pattern and the photoresist pattern are removed, and only a part of the silicon oxynitride layer pattern 210a remains. The above-described processes are the same as those described with reference to FIGS. 4 to 6.

Referring to FIG. 17, the silicon nitride film 206 to be etched is etched using the amorphous carbon film pattern 208a and the silicon oxynitride film pattern 210a as an etching mask. As a result, the silicon nitride film pattern 206a is formed. Since the amorphous carbon film pattern 208a has excellent etching resistance, all of the amorphous carbon film pattern 208a remains undepleted while the exposed silicon nitride film 206 is etched.

Referring to FIG. 18, the remaining amorphous carbon film pattern 208a is removed. Removal of the amorphous carbon film pattern 208a may be performed through an ashing and stripping process.

The conductive film pattern 204a is formed by etching the conductive film 204 using the silicon nitride film pattern 206a as an etching mask. The conductive film pattern 204a is used as a gate electrode. By performing the above-described process, gate electrodes having a structure in which lines and spaces having a fine line width are repeated may be formed.

Although not described, the above-described method may be performed to form various conductive lines used as wiring. For example, the bit line of the semiconductor memory device may be formed by the above-described method.

Example 3

19 to 22 are cross-sectional views illustrating a method of forming a pattern according to another exemplary embodiment of the present invention.

In the present embodiment, the contact plug is formed on the interlayer insulating film.

Referring to FIG. 19, a substrate 250 on which lower structures (not shown) are formed is provided. The lower structure may include a MOS transistor and the like.

An interlayer insulating layer 252 is formed on the substrate 250. The interlayer insulating layer 252 may be formed of silicon oxide.

An amorphous carbon film 254 is formed on the interlayer insulating film 252. The amorphous carbon film 254 is formed through the same process as described with reference to FIG. 2. The amorphous carbon film 254 is used as a hard mask for etching the interlayer insulating film 252 in a subsequent process. That is, in this embodiment, the etching target film is silicon oxide.

Referring to FIG. 20, a silicon oxynitride layer (not shown) and a lower anti-reflective coating layer (not shown) are sequentially formed on the amorphous carbon film 254. A photoresist pattern (not shown) is formed on the lower antireflective coating layer. The photoresist pattern has a shape in which holes are formed in a contact formation portion.

Thereafter, the lower antireflective coating layer and the silicon oxynitride layer are sequentially etched to form the lower antireflective coating pattern (not shown) and the silicon oxynitride layer pattern 256a.

Subsequently, a lower portion of the amorphous carbon film 254 is etched. Through the etching process, an amorphous carbon film pattern 254a to be used as a hard mask pattern is formed. The above-described processes are the same as those described with reference to FIGS. 4 to 6.

Referring to FIG. 21, the interlayer insulating layer 252 as an etching target is etched using the amorphous carbon film pattern 254a and the silicon oxynitride film pattern 256a as an etching mask. As a result, contact holes 260 are formed in the interlayer insulating layer 252.

As described above, when the above process is performed using the amorphous carbon film pattern 254a having excellent etching resistance as an etching mask, the contact holes 260 having a fine opening width may be formed.

Referring to FIG. 22, the remaining amorphous carbon film pattern 254a is removed. Removal of the amorphous carbon film pattern 254a may be performed through an ashing and stripping process. The contact plugs 262 are formed by filling a conductive material in the contact holes 260 and polishing the upper surface of the interlayer insulating layer 252 to be exposed.

As described above, various patterns included in the semiconductor device may be formed using the method of the exemplary embodiment of the present invention. In addition, various semiconductor devices, such as DRAM, SRAM, flash memory, and next-generation memory, may be implemented using the embodiments of the present invention. Hereinafter, a method of manufacturing a DRAM device using the above-described methods will be briefly described.

Example 4

23 to 27 are cross-sectional views illustrating a method of manufacturing a DRAM device according to an embodiment of the present invention.

Referring to FIG. 23, an isolation layer pattern 304 is formed by performing an isolation process on a substrate 300. The device isolation process may be performed in the same manner as described with reference to FIGS. 3 to 8 of the first embodiment.

Briefly, the same process as described with reference to FIG. 2 is performed to form an amorphous carbon film on the substrate 300. Subsequently, a silicon oxynitride film and an antireflective coating film are formed on the amorphous carbon film. Through the patterning process, the anti-reflection coating layer pattern and the silicon oxynitride layer pattern are formed. Thereafter, the amorphous carbon film is etched to form an amorphous carbon film pattern. The amorphous carbon film pattern has a shape covering the active region of the substrate.

The substrate is etched using the amorphous carbon film pattern as an etch mask to form a device isolation trench 302. The isolation layer pattern 304 is formed by filling an insulating material in the isolation trench 302.

Referring to FIG. 24, a MOS transistor is formed on a substrate on which the device isolation layer pattern 304 is formed.

For this purpose, first, the same process as described with reference to FIGS. 15 to 18 of Embodiment 2 is performed to form a gate structure of a MOS transistor. The gate structure has a shape in which a gate insulating film 306, a gate electrode 308, and a silicon nitride film pattern 310 are stacked. For example, the gate electrode 308 may be made of a tungsten material.

Spacers 312 are formed on both sides of the gate structure. In addition, the impurity regions 314 are formed by implanting impurities into both sides of the gate structure. As a result, MOS transistors are formed in the substrate 300.

Referring to FIG. 25, a first interlayer insulating layer 316 is formed on the substrate 300 to cover MOS transistors. Thereafter, a portion of the first interlayer insulating layer 316 is etched to form first contact holes 315 exposing the impurity regions 314. The first contact holes 315 may be formed by performing the same process as described with reference to FIGS. 19 to 21 of the third embodiment.

Thereafter, a conductive material is filled in the first contact holes 315 to form first and second pad contacts 318a and 318b electrically connected to the impurity regions 314, respectively.

Referring to FIG. 26, a second interlayer insulating layer 320 is formed on the first interlayer insulating layer 316. A portion of the second interlayer insulating layer 320 is etched to form second contact holes 321 exposing upper portions of the first pad contacts 318a. The second contact holes 321 may be formed by performing the same process as described with reference to FIGS. 19 to 21 of the third embodiment.

A conductive film is formed on the second interlayer insulating layer 320 while filling the inside of the second contact holes 321. The conductive layer is patterned to form bit line contacts 322a and bit lines 322b. The process of patterning the conductive film may be performed in the same manner as described with reference to FIGS. 15 to 18 of the second embodiment. However, in the process of forming the bit line contact 322a and the bit line 322b, a film corresponding to the gate insulating film is not formed.

A third interlayer insulating layer 324 is formed on the second interlayer insulating layer 320 to cover the bit line 322b.

Portions of the third and second interlayer insulating layers 324 and 320 are etched to form third contact holes 325 exposing upper portions of the second contact pads 318b. The storage node contact 326 is formed by filling a conductive material in the third contact holes 325. The storage node contact may be formed by performing the same process as described with reference to FIGS. 19 to 22 of the third embodiment.

Referring to FIG. 27, a mold layer (not shown) is formed on the third interlayer insulating layer 324. A portion of the mold layer is etched to form an opening (not shown) that exposes an upper surface of the storage node contact. The opening may be formed by performing the same process as described with reference to FIGS. 19 to 21 of the third embodiment.

A lower electrode conductive film (not shown) is formed along the sidewalls and the bottom surface of the opening and the upper surface of the mold layer. The lower electrode conductive film may be formed using a material such as polysilicon, titanium, titanium nitride, tantalum, tantalum nitride, tungsten nitride, ruthenium, or the like. It is preferable to use the above materials alone, but in some cases, two or more of them may be laminated.

After forming a sacrificial film (not shown) on the conductive film for the lower electrode, a portion of the conductive film for the sacrificial film and the lower electrode is removed to expose the upper surface of the mold film. As a result, the lower electrode conductive film is divided into nodes to form a cylindrical lower electrode 328. Next, the sacrificial film and the mold film are removed.

Thereafter, the capacitor is completed by forming the dielectric film 330 and the upper electrode 332 on the lower electrode 328.

As described above, a DRAM device including patterns having a fine line width and an opening width may be manufactured according to an embodiment of the present invention.

28 illustrates a semiconductor device including memory elements fabricated according to the method of one embodiment of the present invention.

As shown, in the apparatus according to the present embodiment, the memory 610 and the memory controller 620 are implemented as a memory card 630.

The memory 610 is a memory device including patterns formed by the method according to the embodiments of the present invention described above. The memory device may include a DRAM, an SRAM, a flash memory, a next generation memory, and the like. The memory controller 620 may supply an input signal for controlling the operation of the memory 610. For example, the memory controller 610 may provide command and address signals. The memory controller 620 may control the memory 610 based on the received control signal.

The memory card 630 may be a memory card that satisfies a standard for use with a consumer electronic device such as a digital camera or a personal computer. The memory controller 620 may control the memory 610 based on a control signal received by the memory card 630 from another device, for example, an external device.

29 illustrates a portable device including a memory device manufactured according to an embodiment of the present invention.

As shown, the portable device 700 may be an MP3, a video player, a video and audio player, or the like. As shown, the portable device 700 includes a memory 610 and a memory controller 620. The memory 610 is a memory device including patterns formed by the method according to the embodiments of the present invention described above. The memory device may include a DRAM, an SRAM, a flash memory, a next generation memory, and the like. The portable device 700 may include an encoder and decoder (EDC) 710, a display member 720, and an interface 730. Data (video, audio, etc.) may be exchanged between the memory 610 and the encoder and decoder (EDC) 710 via the memory controller 620. As indicated by the dotted lines, data may be exchanged directly between the memory 610 and the encoder and decoder (EDC) 710.

The EDC 710 may encode data to be stored in the memory 610. For example, the EDC 710 may MP3 encode audio data and store the same in the memory 610. Alternatively, the EDC 710 may encode MPEG video data (eg, MPEG3, MPEG3, MPEG4, etc.) and store the same in the memory 610. In addition, the EDC 710 may include multiple encoders for encoding different types of data according to different data formats. For example, the EDC 710 may include an MP3 encoder for audio data and an MPEG encoder for video data. The EDC 710 may decode data output from the memory 610. For example, the EDC 710 may MP3 decode audio data output from the memory 610. Alternatively, the EDC 710 may MPEG-decode (eg, MPEG3, MPEG3, MPEG4, etc.) video data output from the memory 610. In addition, the EDC 710 may include multiple decoders for decoding different types of data according to different data formats.

For example, the EDC 710 may include an MP3 decoder for audio data and an MPEG decoder for video data. In addition, the EDC 710 may include only a decoder. For example, data that has already been encoded may be transferred to the EDC 710, decoded, and then transferred to the memory controller 620 and / or the memory 610.

EDC 710 receives data for encoding or already encoded data via interface 730. The interface 730 may follow well known standards (eg, USB, Firewire, etc.). Interface 730 may also include one or more interfaces. For example, the interface 730 may include a firewire interface, a USB interface, and the like. Data provided from memory 610 may also be output via interface 730.

The display member 720 displays the data decoded by the memory 610 and / or the EDC 710 so that the user can recognize the data. For example, the display member 720 may include a display screen for outputting video data, a speaker jack for outputting audio data, and the like.

30 illustrates a semiconductor device including memory elements fabricated according to the method of one embodiment of the present invention.

As shown, in accordance with the device of this embodiment, memory 610 may be coupled to a central processing unit (CPU) 810 within computer system 800.

For example, computer system 800 may be a personal computer, personal data assistant, or the like. The memory 610 may be connected to the CPU 810 via a bus.

31 illustrates a semiconductor device including memory elements fabricated according to the method of one embodiment of the present invention.

As shown, the device 900 according to the present embodiment may include a controller 910, an input / output device 920 such as a keyboard, a display, a memory 610, and an interface 930. In this embodiment, each component of the device may be connected to each other via a bus 950. The controller 910 may include one or more microprocessors, digital processors, microcontrollers, or processors. The memory 610 may store data and / or instructions executed by the controller 910. Interface 930 may be used to transmit data to or from another system, such as a communication network. Device 900 may be a mobile system such as a PDA, a portable computer, a web tablet, a cordless phone, a mobile phone, a digital music player, a memory card, or other system capable of transmitting and / or receiving information.

As described above, according to the present invention, it is possible to form an amorphous carbon film having high flatness while controlling the etching selectivity while suppressing the bending of the substrate. The amorphous carbon film may be used as a hard mask for patterning various thin films used for manufacturing a semiconductor device. In particular, the amorphous carbon film may be used as a hard mask pattern for forming a thick pattern having a fine line width and spacing.

100 substrate 102a amorphous carbon film pattern
104a: silicon oxynitride film pattern 106a: antireflective coating film pattern
108a: photoresist pattern
200 substrate 202 gate insulating film
204a: Gate conductive film pattern 206a: Silicon nitride film pattern
208a: amorphous carbon film pattern 210a: silicon oxynitride film pattern
250: substrate 252: interlayer insulating film
254a: amorphous carbon film pattern 256a: silicon oxynitride film pattern
260: contact hole 262: contact plug

Claims (10)

Positioning the substrate in the deposition chamber; And
In the temperature range of 400 to 500 ° C, warpage of the substrate is suppressed through a plasma deposition process using a reactive gas containing a hydrocarbon in the chamber, a carrier gas, and at least one regulating gas selected from the group consisting of oxygen and carbon oxide. While forming an amorphous carbon film on the substrate, characterized in that it comprises an amorphous carbon film. The method of claim 1, wherein the total amount of gas introduced into the chamber per unit time in the process of forming the amorphous carbon film is 1 to 20% of the volume of the chamber. The method of claim 1, wherein the ratio of the reaction gas and the regulating gas is 20: 1 to 2: 1. The method of claim 1, wherein the ratio of carbon and hydrogen included in the hydrocarbon is 1: 2 to 1: 5. The amorphous carbon film forming method of claim 1, wherein the substrate is bent in the tensile direction or the compression direction or the substrate is flattened by adjusting the temperature of the substrate within the temperature range. The method of claim 1, wherein the carbon oxide comprises carbon monoxide or carbon dioxide. The amorphous carbon film forming method according to claim 1, wherein the extinction coefficient of the amorphous carbon film is adjusted by adjusting an amount of a control gas introduced into the chamber. The method according to claim 7, wherein the amount of control gas flowing into the chamber is increased to increase the absorption coefficient of the amorphous carbon film, or the amount of oxygen introduced into the chamber is reduced to lower the absorption coefficient of the amorphous carbon film. Amorphous Carbon Film Formation Method. Positioning a substrate on which an etch target film is deposited on an upper surface of the deposition chamber;
In the temperature range of 400 to 500 ° C, warpage of the substrate is suppressed through a plasma deposition process using a reactive gas containing a hydrocarbon in the chamber, a carrier gas, and at least one regulating gas selected from the group consisting of oxygen and carbon oxide. Forming an amorphous carbon film on the etching target film;
Forming a photoresist pattern on the amorphous carbon film;
Forming an amorphous carbon film pattern by etching the amorphous carbon film using the photoresist pattern; And
And forming a thin film pattern by etching the etch target layer using the amorphous carbon film pattern. The method of claim 9, wherein the etching target layer is at least one selected from the group consisting of silicon oxide, single crystal silicon, silicon nitride, SiOC, and SiON.

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