KR20100094720A - Rf strap of plasma processing equipment for pecvd process of tft-lcd panel manufactruing - Google Patents

Rf strap of plasma processing equipment for pecvd process of tft-lcd panel manufactruing Download PDF

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Publication number
KR20100094720A
KR20100094720A KR1020090013832A KR20090013832A KR20100094720A KR 20100094720 A KR20100094720 A KR 20100094720A KR 1020090013832 A KR1020090013832 A KR 1020090013832A KR 20090013832 A KR20090013832 A KR 20090013832A KR 20100094720 A KR20100094720 A KR 20100094720A
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KR
South Korea
Prior art keywords
grounding
ground
electrode
plasma processing
processing equipment
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Application number
KR1020090013832A
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Korean (ko)
Inventor
김남규
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김남규
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Priority to KR1020090013832A priority Critical patent/KR20100094720A/en
Publication of KR20100094720A publication Critical patent/KR20100094720A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs

Abstract

PURPOSE: An RF strap of plasma processing equipment for a PECVD process for manufacturing a TFT-LCD panel is provided to achieve uniform density of plasma within a plasma treatment space by preventing a deposited material from being inclined toward an edge of a substrate. CONSTITUTION: An RF strap of plasma processing equipment for a PECVD process for manufacturing a TFT-LCD panel comprises a chamber, a second electrode(120), and a grounding part. The chamber comprises a first electrode(110) to which RF power is applied from outside and a treatment space in which a plasma atmosphere is formed. The second electrode in which a substrate is placed is installed in the chamber. The grounding part is grounded with the second electrode.

Description

RF STRAP OF PLASMA PROCESSING EQUIPMENT FOR PECVD PROCESS OF TFT-LCD PANEL MANUFACTRUING}

The present invention relates to the grounding of a plasma processing facility for a plasma enhanced chemical vapor deposition (PECVD) process for manufacturing TFT-LCD PANEL, and more particularly, to form a uniform plasma atmosphere within the plasma processing space and to deposit the same. The present invention relates to an RF ground (STRAP) for a PECVD process that can deposit a uniform thin film on a substrate by preventing the deposition material from being deposited on the edge side of the substrate.

Typically, in the process of manufacturing a flat panel display device such as an LCD, a plasma processing apparatus that performs a predetermined process on a GLASS substrate using plasma is used, and the plasma processing apparatus includes an upper electrode (diffuser) and a lower electrode. The substrate is positioned between the susceptors, a plasma is generated in the space between both electrodes, and the substrate is subjected to a predetermined process. At this time, RF power is applied to one of the two electrodes, and the other electrode is grounded.

In the conventional plasma enhanced (PE) plasma processing apparatus, RF power is applied to the upper electrode, and a side cross section is fixed to the bracket provided on the lower surface of the lower electrode to fix the RF STRAP (ground) to a ground means made of aluminum on the bottom of the chamber. Grounded by

Here, the above-described lower electrode also serves as a mounting table in which a substrate (not shown) is positioned in an upper region thereof, and thus the substrate is raised upward to reduce the separation distance from the upper electrode after the substrate is supplied from the outside of the plasma processing apparatus. Plasma treatment is performed on the substrate, and when the treatment is completed, the lower electrode is lowered again and then the substrate is taken out. Therefore, the lower electrode continuously moves in the vertical direction.

Here, the bracket is attached to the lower surface of the lower electrode and the grounding means for electrically connecting the bottom of the chamber is composed of a flexible member such as a flexible material such as aluminum, which is composed of a predetermined portion of the lower region of the bracket It is fixed to the chamber bottom predetermined part by fixing members, such as a bolt, respectively. At this time, the ground means is bent in the middle portion, the ground means is at an angle to the lower surface of the lower electrode or the bottom of the chamber, the bending and unfolding is repeated in accordance with the repeated lifting operation of the lower electrode in accordance with the processing performed.

Therefore, aluminum used as a conventional grounding means has a Young's modulus of 70.3 GPa, so that a local load is applied due to the repeated lifting operation of the lower electrode.

Accordingly, the conventional grounding means has a problem that the local fatigue strength is increased and broken, thereby closing the ground path of the plasma electrons inside the apparatus.

In addition, conventionally, there is a problem in that the thin film deposited on the substrate is deposited toward the edge of the substrate according to the closing of the ground path.

SUMMARY OF THE INVENTION The present invention was created to solve the above problems, and an object of the present invention is to form a uniform plasma density in a plasma processing space, and to prevent the deposition material to be deposited toward the edge of the substrate. The present invention provides an RF ground (STRAP) of a plasma processing facility for a TFT-LCD panel manufacturing PECVD process capable of depositing a uniform thin film on a substrate.

The present invention provides an RF ground (STRAP) of a plasma processing facility for a PECVD process for manufacturing TFT-LCD PANEL to solve the above problems.

The TFT-LCD PANEL manufacturing PECVD process plasma processing apparatus includes a chamber having a first electrode portion to which RF power is applied from the outside and a processing space in which a plasma atmosphere is formed; A second electrode unit installed in the chamber and on which a substrate is mounted; And a ground part that grounds the second electrode part and is formed of different vertical elastic modulus and formed to border each other.

Here, the ground part has a first ground part member having a first type elastic modulus, and a second ground part having a second type elastic modulus surrounding an outer surface of the first ground part member to form a boundary with the first ground part member. It is preferable that it consists of members.

The first type elastic modulus is preferably three times the second type elastic modulus.

The first ground member may be made of pure nickel or nickel alloy, and the second ground member may be made of pure aluminum or aluminum alloy.

In addition, the second ground member may be formed on the outer surface of the first ground member by coating by any one of a flame spray, arc spray and plasma spray.

In addition, the ground portion is heat-treated at 350 degrees Celsius for 3 to 4 hours, after the heat treatment is preferably formed by washing and drying through isopropyl alcohol (IPA) cleaning.

In addition, the ground portion is formed in a pair to be located at both ends of the second electrode portion, one end of the ground portion is bolted to one end side of the second electrode portion, the other end of the ground portion is bolted to the inner bottom wall of the chamber It is preferred to be fastened.

Here, the pair of grounding portions are preferably bent to be symmetrical to each other.

In addition, the ground portion may include a plurality of holes that are drilled at regular intervals, and the holes may be connected to each other through straight holes forming a straight line.

In addition, a plurality of vacuum holes are provided to receive the vacuum from the outside of the second electrode portion, and a lifting unit is disposed at the bottom of the second electrode portion.

Here, the elevating unit is preferably provided with an elevating shaft for supporting the lower end of the second electrode portion, and the elevating cylinder connected to the elevating shaft and receiving the power from the outside to elevate the elevating shaft.

As described above, the present invention has the effect of forming a uniform plasma atmosphere within the plasma processing space.

In addition, the present invention has the effect of being able to deposit a uniform thin film on the substrate by preventing the deposition material is deposited to the edge side of the substrate.

Hereinafter, a plasma processing apparatus for a PECVD process for manufacturing TFT-LCD PANEL will be described with reference to the accompanying drawings.

2 is a cross-sectional view showing a plasma processing apparatus for a PECVD process for manufacturing TFT-LCD PANEL of the present invention. 3 is an enlarged cross-sectional view illustrating a coupling state of the ground part of FIG. 2. 4 is a perspective view illustrating a ground part of FIG. 3. FIG. 5 is a cross-sectional view taken along the line II ′ of FIG. 4. 6 is a photograph showing an optical image of a grounding part according to the present invention. Figure 7 is a photograph showing an SEM image of the grounding portion according to the present invention. 8 is a perspective view illustrating an example in which holes and straight holes are formed in the ground portion according to the present invention. 9 is a cross-sectional view showing that the first grounding member and the second grounding member in accordance with the present invention forms an interface between the uneven shape.

Plasma processing equipment for the TFT-LCD PANEL manufacturing PECVD process using the RF ground (STRAP) of the present invention has a chamber 100 forming a processing space 100a in which a plasma atmosphere is formed. One side of the chamber 100 is formed with an inlet 101 for guiding the introduction of the substrate 10 by a transfer device (not shown) such as a robot arm, and on the other side of the chamber 100, a substrate having a deposition process completed. An outlet 102 through which 10 is drawn out is formed.

In addition, the first electrode part 110 is disposed at an inner upper side of the chamber 100. The first electrode unit 110 may be a shower head in which a plurality of gas supply holes 111 are formed.

The shower head is connected to the gas supply unit 200 installed outside the chamber 100. The gas supply part 200 serves to supply deposition gas to the gas supply hole 111 of the shower head which is the first electrode part 110. Here, the gas supply unit 200 is connected to the central portion of the shower head, and communicates with the gas supply holes 111 opened from the center portion to the bottom of the shower head. Here, the diameters of the gas supply holes 111 may be formed to gradually increase from the central portion along the outer circumferential side of the shower head. Here, the gas supply unit 200 may be operated by receiving an electrical signal from the control unit 600 described below.

Therefore, since the gas pressure flowing into the central portion may be formed higher than the gas pressure flowing into the gas supply hole 111 on the outer circumferential side of the shower head, the diameters of the gas supply holes 111 are formed as described above. In this case, the pressure of the deposition gas discharged through the gas supply at the bottom of the shower head may be uniform.

The first electrode 110, which is the shower head, is electrically connected to the high frequency power applying unit 300. Here, the high frequency power applying unit 300 is grounded. Therefore, the high frequency power applying unit 300 may apply high frequency power to the first electrode unit 110.

In addition, a second electrode part 120 is disposed below the chamber 100 so as to face the first electrode part 110. Here, the second electrode 120 is preferably a chuck or susceptor on which the substrate 10 is seated. A plurality of vacuum holes 120a are formed in the second electrode part 120 to form a vacuum provided from the outside in order to vacuum-adsorb the substrate 10.

In addition, a lifting unit is installed at the bottom of the second electrode part 120. Here, the elevating unit is the elevating cylinder 122, the elevating shaft 121 is connected to the elevating cylinder 122 and connected to the lower end of the second electrode portion 120 and the elevating cylinder 122 Consists of a control unit 600 for controlling the operation of. Therefore, as the lifting shaft 121 is lifted, the second electrode 120 moves up and down, and thus, the substrate 10 is lifted by the lifting shaft 121 to the upper surface of the second electrode 120. Settling or lifting may be repeated.

The second electrode part 120 is grounded at the bottom of the second electrode part 120 and inside the chamber 100, and formed with different longitudinal elastic modulus (or Young's modulus) and formed to have a boundary with each other. Grounding unit 400 is installed.

Here, as shown in Figure 3, the ground portion 400 is formed in a pair to be located at both ends of the second electrode portion 120, one end of the ground portion 400 is the second electrode The bolt B is fastened to one end of the part 120, and the other end of the ground part 400 is fastened to the inner bottom wall of the chamber 100.

In addition, the pair of grounding parts 400 are bent to be convex toward the side wall of the chamber 100 so as to be symmetrical with each other.

In addition, referring to FIG. 8, the ground part 400 may include a plurality of holes 401 which are punctured at predetermined intervals, and the holes 401 may be connected to each other through a straight hole 402 forming a straight line. have.

4 and 5, the grounding part 400 has a first grounding member 410 having a first type elastic modulus and the first grounding member 410 to form a boundary with the first grounding member 400. The second ground member 420 has a second type elastic modulus that surrounds the outer surface of the first ground member 410.

The first type elastic modulus may be included in a range of 2.5 to 3.5 times the second type elastic modulus. Preferably, the first type elastic modulus is three times greater than the second type elastic modulus.

Here, the first ground member 410 is made of pure nickel (pure-Ni) or nickel alloy (Ni-a), the second ground member 420 is pure aluminum (pure-Al) Alternatively, the aluminum alloy (Al-a) may be made of any one. The final modulus of pure aluminum is 70.3 GPa, and the final modulus of nickel is 199 to 220 GPa. In addition, preferably, the second ground member 420 uses either Al 1100 or Al 1050, and the first ground member 410 is preferably made of Ni 600.

9, the boundary between the first ground member 410 and the second ground member 420 of the ground portion 400 may form a boundary surface PS of an uneven shape. Therefore, the impact from the outside can be easily dissipated by the above-mentioned concave-convex interface PS.

On the other hand, the second ground member 420 is coated on the outer surface of the first ground member 410 by any one of a spray method of flame spray, arc spray and plasma spray It is good to be formed.

Here, the grounding part 400 may be heat-treated at 350 degrees Celsius for 3 to 4 hours, and then washed and dried through isopropyl alcohol (IPA) cleaning after the heat treatment.

In addition, the chamber 100 is connected to the exhaust unit 500. The exhaust unit 500 includes a vacuum pump 510 operated by receiving an electrical signal from the control unit 600.

Next, referring to FIG. 1 for the plasma processing equipment for the TFT-LCD PANEL manufacturing PECVD process using the RF ground (STRAP) of the present invention configured as described above, the high-frequency power supply unit 300 is a shower head RF power may be applied to the first electrode unit 110.

The control unit 600 transmits an electrical signal to the gas supply unit 200, and the gas supply unit 200 supplies the deposition gas to the first electrode unit 110, which is a shower head. Here, the deposition gas is a processing gas such as silane (SiH 4) and hydrogen (H 2) for depositing silicon, and is injected into the processing space 100a through the plurality of gas supply holes 111 of the shower head. As a result, the deposition precursor gas is uniformly distributed into the processing space 100a on the substrate 10. Alternative mixtures of precursor gases for depositing silicon nitride are silane, ammonia (NH 3) and nitrogen (N 2).

For example, the RF power supply unit 300 operating at 10 to 14 MHz is connected to the first electrode unit 110 to thereby excite the deposition gas into the plasma state, thereby improving chemical vapor deposition of silicon onto the substrate 10. Let's do it.

In addition, the second electrode part 120 which is a susceptor grounded by the ground part 400 according to the present invention serves as a counter electrode with respect to the RF-biased first electrode part 110.

The second electrode part 120 is connected to the lifting unit, whereby the external transfer device introduces the substrate 10 onto the second electrode part 120, and then the substrate 10 is moved to the second electrode part 120. It is possible to raise closer to).

Here, an electric field is formed between the first electrode part 110 and the second electrode part 120. For example, when the second electrode part 120 forms a '+' pole, plasma electrons in the processing space 100a are moved from the first electrode part 110 onto the second electrode part 120.

As the plasma electrons move, the deposition gas excited in the plasma state in the processing space 100a of the chamber 100 is moved to the upper surface of the substrate 10 as described above.

In addition, the plasma electrons have a ground path formed by ground parts 400 installed at both lower ends of the second electrode part 120.

Here, the grounding part 400 according to the present invention includes a first grounding part body 410 made of nickel or a nickel alloy having a Young's modulus in a range of 2.5 to 3.5 times greater than that of aluminum or an aluminum alloy, and the first contacting part. The second ground portion body 420 is a coating film of aluminum or aluminum alloy coated on the outer surface of the branch body 410.

Therefore, the grounding part 400 of the present invention supports both bottom surfaces of the second electrode part 120 and the bottom surface of the chamber 100, while lifting and lowering the second electrode part 120 according to the operation of the lifting unit. It can be easily prevented from being broken. That is, the grounding part 400 according to the present invention can reduce the fatigue accumulation phenomenon to a certain level or less because the elasticity and fatigue strength is a certain level or more than aluminum.

 Accordingly, the closing of the ground path of the plasma electrons due to the breakage of the ground unit 400 can be easily prevented, and the formation of the thin film deposited on the substrate 10 can be normally guided. That is, it is possible to prevent the deposition material to be deposited toward the edge side of the substrate 10.

In addition, as shown in FIG. 8, since the ground portion 400 is provided with a plurality of holes 401, and the holes 401 are connected to each other through the straight hole 402, the ground portion 400. The bending strength of itself may be increased.

On the other hand, the grounding part 400 according to the present invention is aluminum on the outer surface of the first grounding member 410 of the nickel (flame spray, arc spray and plasma spray any one spray method of aluminum It is prepared by coating the second ground body 420 of the. Therefore, due to the spray method, the grounding part 400 according to the present invention may have plasma resistance.

In addition, since the grounding part 400 is heat-treated at 350 degrees Celsius for 3 to 4 hours, and is formed by washing and drying through isopropyl alcohol (IPA) cleaning after the heat treatment, the grounding part 400 is itself It can also improve the strength of.

In addition, referring to FIG. 9, since the first and second ground body bodies 410 and 420 according to the present invention may have a boundary surface PS having an uneven shape, the external impact may be easily dispersed. That is, the grounding part 400 according to the present invention may increase the life time by 10 times or more than the aluminum grounding part by preventing local load concentration due to the lifting operation of the second electrode part 120. .

Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. Of course.

Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined not only by the claims below, but also by the equivalents of the claims.

1 is a photograph showing an optical image of a ground portion used in a conventional plasma processing apparatus for manufacturing a semiconductor device.

Figure 2 is a cross-sectional view showing a plasma processing equipment for the PDV process for manufacturing TFT-PCD panel of the present invention.

3 is an enlarged cross-sectional view of the symbol A of FIG. 2.

4 is a perspective view illustrating a ground part of FIG. 3.

FIG. 5 is a cross-sectional view taken along the line II ′ of FIG. 4.

6 is a photograph showing an optical image of a grounding part according to the present invention.

Figure 7 is a photograph showing an SEM image of the grounding portion according to the present invention.

8 is a perspective view illustrating an example in which holes and straight holes are formed in the ground portion according to the present invention.

9 is a cross-sectional view showing that the first grounding member and the second grounding member in accordance with the present invention forms an interface between the uneven shape.

* Description of main parts

100: chamber

110: first electrode portion

120: second electrode portion

121: lifting shaft

122: lifting cylinder

123: Bellows

200: gas supply unit

300: RF power supply unit

400: grounding part

410: the first ground member

420: second ground member

500: exhaust

510: exhaust pump

600: control unit

Claims (10)

A chamber having a first electrode portion to which RF power is applied from the outside and having a processing space in which a plasma atmosphere is formed; A second electrode unit installed in the chamber and on which a substrate is mounted; And And grounding the second electrode part, the grounding part having a different elastic modulus of elasticity and including a grounding part formed on a boundary with each other. The method of claim 1, The ground portion may include a first ground member having a first type elastic modulus and a second ground member having a second type elastic modulus surrounding an outer surface of the first ground member to form a boundary with the first ground member. RF grounding of the plasma processing equipment for the PDV process for manufacturing TFT-LC panel. 3. The method of claim 2, And wherein said first elastic modulus is three times greater than said second elastic modulus. RF grounding of a plasma processing apparatus for manufacturing a TFT-PCD panel. 3. The method of claim 2, The first ground member is made of any one of pure nickel or nickel alloy, And said second ground member is made of any one of pure aluminum or an aluminum alloy. The method of claim 4, wherein The second ground member is formed by coating the outer surface of the first ground member by any one of a flame spray, arc spray and plasma spray coating method -RF grounding of the plasma processing equipment for the PCB manufacturing process. The method of claim 5, The ground portion is heat-treated at 350 degrees Celsius for 3 to 4 hours, and after the heat treatment is formed by washing and drying through isopropyl alcohol (IPA) cleaning PDV panel for manufacturing RF grounding of process plasma processing equipment. The method of claim 1, The ground portion is formed in a pair to be located at both ends of the second electrode portion, One end of the ground part is bolted to one end of the second electrode part, and the other end of the ground part is bolted to an internal bottom wall of the chamber. RF grounding. The method of claim 7, wherein And the pair of grounding parts are bent to be symmetrical to each other. The method of claim 1, The ground portion is provided with holes to be drilled at a predetermined interval, the hole is connected to each other through a straight hole forming a straight line, RF grounding of the plasma processing equipment of the plasma processing equipment for the PCB manufacturing process. The method of claim 1, The second electrode unit is formed with vacuum holes that receive a vacuum from the outside, A lifting unit is disposed at the bottom of the second electrode unit, The elevating unit has a lifting shaft connected to the lower end of the second electrode portion, and the lifting cylinder is connected to the lifting shaft and receives the power from the outside to lift the lifting shaft, characterized in that the TFT-LCD panel manufacturing RF grounding of plasma processing equipment for PCV process.
KR1020090013832A 2009-02-19 2009-02-19 Rf strap of plasma processing equipment for pecvd process of tft-lcd panel manufactruing KR20100094720A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160127368A (en) 2015-04-27 2016-11-04 김경아 Ground Strap for manufacturing OLED and TFT-LCD Panel
KR20170041409A (en) * 2015-10-07 2017-04-17 주식회사 원익아이피에스 Substrate processing apparatus
KR20210132444A (en) * 2020-04-27 2021-11-04 주식회사 티원 Ground Strap

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160127368A (en) 2015-04-27 2016-11-04 김경아 Ground Strap for manufacturing OLED and TFT-LCD Panel
KR20170041409A (en) * 2015-10-07 2017-04-17 주식회사 원익아이피에스 Substrate processing apparatus
KR20210132444A (en) * 2020-04-27 2021-11-04 주식회사 티원 Ground Strap

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