KR20100089606A - Display device using semiconductor quantum dot for color changing layer - Google Patents

Display device using semiconductor quantum dot for color changing layer Download PDF

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KR20100089606A
KR20100089606A KR1020090008936A KR20090008936A KR20100089606A KR 20100089606 A KR20100089606 A KR 20100089606A KR 1020090008936 A KR1020090008936 A KR 1020090008936A KR 20090008936 A KR20090008936 A KR 20090008936A KR 20100089606 A KR20100089606 A KR 20100089606A
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layer
color
light emitting
color conversion
conversion layer
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KR1020090008936A
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Korean (ko)
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정소희
한창수
장원석
김준동
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한국기계연구원
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

PURPOSE: A display device is provided to improve light emitting efficiency by forming a color conversion layer which converts light into various colors into a plurality of nano quantum dots. CONSTITUTION: An anode layer(10) is formed on a substrate in a predetermined pattern. A color filter(11) is formed on the anode layer. A color conversion layer(12) is formed on the color filter. A hole injection/transmission layer(13) is formed on the color conversion layer. A light emitting layer(14) is formed on the hole injection/transmission layer. A cathode layer(16) is formed on the light emitting layer.

Description

컬러 변환층으로 반도체 나노 양자점을 포함하는 디스플레이소자{DISPLAY DEVICE USING SEMICONDUCTOR QUANTUM DOT FOR COLOR CHANGING LAYER}DISPLAY DEVICE USING SEMICONDUCTOR QUANTUM DOT FOR COLOR CHANGING LAYER}

본 발명은 디스플레이소자에 관한 것으로서, 더욱 상세하게는 발광층으로부터 발광된 광의 컬러를 변환하여 컬러 필터에 입사시키는 컬러 변환층을 반도체 나노 양자점 및 그를 포함하는 복합재료로 구성함으로써 발광 효율 및 색 분해능을 향상시킬 수 있도록 하는 컬러 변환층으로 반도체 나노 양자점을 포함하는 디스플레이소자에 관한 것이다. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a display device, and more particularly, to improve light emission efficiency and color resolution by constructing a color conversion layer that converts the color of light emitted from the light emitting layer and enters a color filter into a semiconductor nano quantum dot and a composite material including the same. The present invention relates to a display device including a semiconductor nano quantum dot as a color conversion layer.

일반적으로 유기전계 발광표시장치(OLED: Organic Light Emitting Display), 특히 액티브 매트릭스 유기전계발광표시장치(AMOLED: Active Matrix Organic Light Emitting Display)는 ITO와 같은 투명 전극에 의해 형성되는 양극과 낮은 일함수를 갖는 금속의 음극 사이에 복수의 유기박막이 적층된 유기발광층 구조를 갖는다.In general, an organic light emitting display (OLED), particularly an active matrix organic light emitting display (AMOLED) has a low work function and an anode formed by a transparent electrode such as ITO. It has an organic light emitting layer structure in which a plurality of organic thin films are laminated between cathodes of metals having a metal.

유기전계 발광표시장치에서는 외부로부터 공급되는 전자와 정공이 발광층에서 서로 결합하여 소멸하면서 여기자(exiton)를 형성하고 이 여기자가 여기상태에서 기저상태로 천이하면서 발광층의 형광성 분자에 에너지를 전달하고 이것이 발광함으로써 화상이 형성된다.In the organic light emitting display device, electrons and holes supplied from the outside combine with each other in the light emitting layer to disappear and form an exciton, and the excitons transition from the excited state to the ground state, transferring energy to the fluorescent molecules of the light emitting layer, which emits light. This forms an image.

이처럼, 상기 유기전계 발광표시장치는 유기물의 자체 발광으로 구조가 간단하고 광효율이 높은 장점이 있다.As such, the organic light emitting display device has advantages of simple structure and high light efficiency by self-emission of organic material.

유기전계 발광표시장치에는 기판 상부에 소정패턴으로 형성된 양극층과, 이 양극층 상부에 순차적으로 적층되는 정공주입층, 정공수송층, 발광층 및 전자수송층과 상기 전자수송층의 상면에 형성된 소정패턴의 음극층으로 구성된다. In an organic light emitting display device, an anode layer formed in a predetermined pattern on a substrate, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and a cathode pattern having a predetermined pattern formed on an upper surface of the electron transport layer are sequentially stacked on the anode layer. It consists of.

여기서 정공 수송층, 발광층 및 전자수송층은 유기화합물로 이루어진 유기박막들이다. The hole transport layer, the light emitting layer and the electron transport layer are organic thin films made of an organic compound.

이러한 유기전계 발광표시장치 중 특히 멀티컬러 또는 풀컬러 유기전계 발광표시장치의 제조방식에는 도 1에 도시된 바와 같이 적색, 녹색, 청색의 각 발광 물질을 따로따로 증착시키는 방식(이하, RGB 3색 독립 발광 방식)과, 도 2에 도시된 바와 같이 백색광 및 컬러필터를 쓰는 방식, 도 3에 도시된 바와 같이 청색광 및 컬러변환물질(color changing medium: CCM)을 쓰는 방식 등이 있다.Among the organic light emitting display devices, in particular, a method of manufacturing a multicolor or full color organic light emitting display device is a method of separately depositing red, green, and blue light emitting materials as shown in FIG. 1 (hereinafter, RGB 3 colors). Independent light emission method), a method of using white light and a color filter as shown in FIG. 2, a method of using blue light and a color changing medium (CCM) as shown in FIG.

도 1의 3색 독립 발광 방식은 양극층(100)과, 이 양극층(100) 상부에 순차적으로 형성된 정공주입/수송층(110), RGB 각각의 유기발광층(120: 120a,120b,120c)과 전자주입/수송층(130), 및 음극층(140)을 포함한다. The three-color independent emission method of FIG. 1 includes an anode layer 100, a hole injection / transport layer 110 sequentially formed on the anode layer 100, and organic light emitting layers 120 (120a, 120b, 120c) of RGB, respectively. The electron injection / transport layer 130, and the cathode layer 140 is included.

도 2의 백색광 및 컬러필터를 이용하는 방식은 양극층(200)과, 이 양극층(200) 상부에 순차적으로 형성된 RGB 컬러 필터(210 : 210a,210b,210c)와, 정공주입/수송층(220), 백색광 발광층(230)과 전자주입/수송층(240), 및 음극층(250)을 포함한다.The method using the white light and the color filter of FIG. 2 includes the anode layer 200, the RGB color filters 210: 210a, 210b, and 210c sequentially formed on the anode layer 200, and the hole injection / transport layer 220. , A white light emitting layer 230, an electron injection / transport layer 240, and a cathode layer 250.

도 3의 컬러변환물질을 이용하는 방식은 양극층(300)과, 이 양극층(300) 상 부에 순차적으로 형성된 RGB 컬러 필터(310 : 310a, 310b,310c)와, 컬러 변환층(320 : 320a,320b), 정공주입/수송층(330), 발광층(340)과 전자주입/수송층(350), 및 음극층(360)을 포함한다. The method using the color converting material of FIG. 3 includes an anode layer 300, RGB color filters 310: 310a, 310b, 310c sequentially formed on the anode layer 300, and a color converting layer 320: 320a. And 320b), a hole injection / transport layer 330, a light emitting layer 340, an electron injection / transport layer 350, and a cathode layer 360.

그런데, 도 1에 도시된 3색 독립발광방식은 높은 발광 효율을 나타내기는 하지만 색 분해능이 떨어지는 단점이 있고, 도 2의 백색광 및 컬러필터를 쓰는 방식은 저비용으로 간단한 제조 공정이 간단하고 안정적이며 색 분해능이 높지만 발광 효율이 낮은 단점이 있다.By the way, the three-color independent light emitting method shown in Figure 1 shows a high luminous efficiency but has a disadvantage of poor color resolution, the method of using the white light and the color filter of Figure 2 is a simple manufacturing process at a low cost simple, stable and color High resolution but low luminous efficiency has the disadvantage.

또한, 도 3에 도시된 청색광 및 컬러변환물질(color changing medium: CCM)을 이용하는 방식은 저비용과 제조 공정의 단순화 및 높은 색 분해능을 갖지만 기존에 사용되는 컬러 변환물질의 발광 효율이 낮고, 발광 반폭이 커서 색순도가 낮으며 안정적이지 못한 단점이 있다.In addition, the method using the blue light and the color changing medium (CCM) shown in FIG. 3 has low cost, simplification of manufacturing process and high color resolution, but low luminous efficiency of the conventional color converting material, and light emission half width. This cursor has low color purity and is not stable.

도 4는 도 3에 도시된 디스플레이 소자에서 종래 기술에 따른 컬러변환물질의 흡광 및 발광 스펙트럼을 나타낸 그래프도이다. 4 is a graph illustrating absorption and emission spectra of a color conversion material according to the related art in the display device illustrated in FIG. 3.

도 4를 참조하면, 기존의 형광체의 경우 흡광 파형과 발광 파형이 넓고, 흡광 최고점과 발광 최고점이 인접해 있다. 이로 인해 도3의 디스플레이 소자에서 청색 빛을 녹색, 적색으로 동시에 효율적으로 변환하기 어렵다. Referring to FIG. 4, in the case of a conventional phosphor, an absorption waveform and a emission waveform are wide, and an absorption peak and an emission peak are adjacent to each other. As a result, it is difficult to efficiently convert blue light into green and red at the same time in the display device of FIG.

특히, 청색 빛을 적색으로의 변환하는데 있어서 효율이 저하된다. In particular, the efficiency falls in converting blue light into red.

이에 따라, 청색 빛의 효과적인 변환을 위해 서로 다른 재료를 혼합해야 하므로 균일도가 감소되는 문제가 발생한다. 또한, 발광 파형이 넓어 최종 출력되는 광의 색 순도가 저하되는 문제가 있다.Accordingly, a problem arises in that uniformity is reduced because different materials must be mixed for effective conversion of blue light. In addition, there is a problem that the light emission waveform is wide and the color purity of the light finally output is lowered.

상기 배경 기술의 문제점을 해결하기 위한 본 발명의 목적은, 청색광 및 컬러변환물질(color changing medium: CCM)을 이용하는 디스플레이소자에 있어서, 컬러 변환 물질을 반도체 나노 양자점 및 그를 포함하는 복합재료로 형성함으로써 청색광을 같은 조성을 같는 재료을 사용하여 적색 및 녹색으로 동시에 변환하고, 발광 파형을 좁혀 색순도를 증대할 수 있도록 하는 컬러 변환층으로 반도체 나노 양자점을 포함하는 디스플레이소자를 제공함에 있다. SUMMARY OF THE INVENTION An object of the present invention for solving the problems of the background art, in a display device using a blue light and a color changing medium (CCM), by forming a color converting material of a semiconductor nano quantum dot and a composite material comprising the same The present invention provides a display device including a semiconductor nano quantum dot as a color conversion layer for converting blue light into red and green simultaneously using a material having the same composition and narrowing an emission waveform to increase color purity.

상기 과제를 해결하기 위한 본 발명의 컬러 변환층으로 반도체 나노 양자점을 포함하는 디스플레이소자는 기판 상부에 소정패턴으로 형성된 양극층과, 이 양극층 상부에 순차적으로 형성된 컬러 필터와, 컬러 변환층, 정공주입/수송층, 발광층과 전자주입/수송층, 및 음극층을 포함하는 디스플레이 소자에 있어서, 상기 컬러 변환층이 다수의 나노 양자점을 포함하는 층으로 형성된 것이다.A display device including a semiconductor nano quantum dot as a color conversion layer of the present invention for solving the above problems is an anode layer formed in a predetermined pattern on the substrate, a color filter sequentially formed on the anode layer, a color conversion layer, holes In a display device including an injection / transport layer, a light emitting layer, an electron injection / transport layer, and a cathode layer, the color conversion layer is formed of a layer including a plurality of nano quantum dots.

여기서, 상기 발광층은 청색광을 제공하도록 형성되며, 상기 컬러 변환층은 상기 발광층에서 제공된 청색광을 적색과 녹색 광으로 변환하는 적색 변환층과 녹색 변환층을 포함하여 이루어 질 수 있다. The emission layer may be formed to provide blue light, and the color conversion layer may include a red conversion layer and a green conversion layer for converting the blue light provided from the emission layer into red and green light.

본 발명은 발광층으로부터의 광을 다양한 색상으로 변환하는 컬러 변환층을 다수의 나노 양자점으로 구성하여 다양한 파장대에서 흡광이 이루어지도록 하여 으로써 발광 효율을 높이고, 발광 파형을 좁혀 색 구현 능력을 높일 수 있는 이점이 있다. 또한 부드러운 재료와 결합된 반도체 나노양자점은 플렉시블한 발광 소자에 적용될 수 있다.The present invention provides a color conversion layer for converting light from the light emitting layer into a variety of colors to a plurality of nano quantum dots to absorb light in a variety of wavelengths to increase the efficiency of light emission, narrowing the light emission waveform to increase the color implementation ability There is this. In addition, semiconductor nano quantum dots combined with soft materials can be applied to flexible light emitting devices.

도 5는 본 발명에 따른 컬러 변환층으로 반도체 나노 양자점을 포함하는 디스플레이소자의 단면 개략도이다.5 is a schematic cross-sectional view of a display device including semiconductor nano quantum dots as a color conversion layer according to the present invention.

도 5를 참조하면, 본 발명은 기판 상부에 소정패턴으로 형성된 양극층(10)과, 이 양극층(10) 상부에 순차적으로 형성된 컬러 필터(11: 11a,11b,11c))와, 컬러 변환층(12 : 12a,12b), 정공주입/수송층(13), 발광층(14)과 전자주입/수송층(15), 및 음극층(16)을 포함하는 디스플레이 소자에 관한 것이다.Referring to FIG. 5, the present invention provides an anode layer 10 formed in a predetermined pattern on a substrate, color filters 11: 11a, 11b, and 11c sequentially formed on the anode layer 10, and color conversion. A display element comprising a layer 12: 12a, 12b, a hole injection / transport layer 13, a light emitting layer 14, an electron injection / transport layer 15, and a cathode layer 16.

여기서, 양극층(16)은 투명성 및 도전성 특성을 가지는 물질로서, 예컨대 ITO(indium-tin oxide), FTO(Fluorine doped tin oxide), ZnO-(Ga2O3 또는 Al2O3), SnO2-Sb2O3 등이 사용될 수 있으며, 바람직하게는 ITO로 이루어진다. Here, the anode layer 16 is a material having transparency and conductivity characteristics, for example, indium-tin oxide (ITO), fluorine doped tin oxide (FTO), ZnO- (Ga 2 O 3 or Al 2 O 3 ), SnO 2 -Sb 2 O 3 or the like can be used, preferably made of ITO.

컬러 필터(11)는 적색, 녹색, 청색의 조절을 통해 색 구현을 하는 것으로서, 적색 필터(11a)와, 청색 필터(11b) 및 녹색 필터(11c)로 구성된다. The color filter 11 implements color by adjusting red, green, and blue, and includes a red filter 11a, a blue filter 11b, and a green filter 11c.

컬러 변환층(12: 12a,12b)은 발광층(14)에서 제공된 광을 변환하여 적(Red), 녹(Green), 청(Blue) 3원색으로 변환하는 것으로서, 발광층(14)이 청색광을 발광하 는 경우 적색 변환층(12a)과 녹색 변환층(12b)이 일정한 배열 패턴을 가지도록 형성할 수 있다. The color conversion layers 12: 12a and 12b convert the light provided from the light emitting layer 14 to red, green, and blue primary colors, and the light emitting layer 14 emits blue light. In this case, the red conversion layer 12a and the green conversion layer 12b may be formed to have a predetermined arrangement pattern.

본 발명의 특징적인 양상에 따라 컬러 변환층(12)은 다수의 반도체 나노 양자점 또는 이를 포함하는 고분자층으로 형성된다. According to a characteristic aspect of the present invention, the color conversion layer 12 is formed of a plurality of semiconductor nano quantum dots or a polymer layer including the same.

즉, 기존의 컬러변환물질(color changing medium: CCM)로서 형광체를 이용하는 경우 흡광 폭이 좁아 파장 변환이 어렵고 발광 파형이 넓어 색순도가 저하되었으나, 본 발명은 다수의 나노 양자점을 컬러변환층으로 이용함으로써 도 5에 도시된 바와 같이 흡광 폭을 넓히고, 발광 파형이 좁혀 발광 효율을 색 분해능을 높일 수 있다. That is, in the case of using a phosphor as a conventional color changing medium (CCM), although the absorption width is narrow, wavelength conversion is difficult and the light emission waveform is wide, the color purity is degraded. However, the present invention uses a plurality of nano quantum dots as the color conversion layer. As shown in FIG. 5, the light absorption width is widened and the light emission waveform is narrowed, thereby improving color emission efficiency.

또한 어떤 기판 위에서도 손쉽게 제작이 가능하고 저가 공정이 가능하다. It is also easy to fabricate on any substrate and allows for a low cost process.

이때, 양자점은 II-VI족, III-V족, IV-VI족, IV족 반도체 화합물 및 이들의 혼합물로 형성할 수 있으며, 구체적으로는 CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, InP, InAs 또는 및 이들의 혼합물로 이루어진 군에서 선택하여 형성할 수 있다. In this case, the quantum dots may be formed of group II-VI, group III-V, group IV-VI, group IV semiconductor compounds and mixtures thereof, and specifically, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, InP, It may be selected from the group consisting of InAs or a mixture thereof.

또한, 양자점은 코어 구조 또는 코어-쉘 구조로 이루어질 수 있으나, 코어-쉘 구조를 갖는 것이 발광 효율을 높이고 광안정성을 증대시키는 데에 유리하다.In addition, the quantum dots may be formed of a core structure or a core-shell structure, but having a core-shell structure is advantageous for increasing luminous efficiency and increasing light stability.

또한, 정공주입/수송층(13)은 다이아민(diamine) 유도체인 TPD 등이 이용된다.In addition, as the hole injection / transport layer 13, TPD, which is a diamine derivative, is used.

한편, 발광층(14)은 적색, 녹색, 청색 컬러 중 가장 높은 에너지를 가지는 청색 컬러 발광물질을 포함하는 것이 바람직하다. Meanwhile, the light emitting layer 14 preferably includes a blue color light emitting material having the highest energy among red, green, and blue colors.

다시 말해, 높은 에너지(짧은 파장)를 가지는 광을 사용해야만 상대적으로 긴 파장의 색상으로 변환 발광이 가능하기 때문에 성택 컬러 발광물질을 포함하는 것이 바람직하다.In other words, since it is possible to convert light emission into a color having a relatively long wavelength only by using light having a high energy (short wavelength), it is preferable to include an adult color light emitting material.

전자주입/수송층(15)은 상대적으로 전자 포집능력이 좋은 특성을 가지는 물질로 이루어짐이 바람직하며, [6,6]-phenyl-C71 butyric acid methyl ester (PC70BM) 또는 C60, CNT, TiO2, ZnO 등 같은 무기물로 이루어질 수 있다.The electron injection / transport layer 15 is preferably made of a material having a relatively good electron trapping ability, [6,6] -phenyl-C 71 butyric acid methyl ester (PC 70 BM) or C 60 , CNT, It may be made of an inorganic material such as TiO 2 , ZnO and the like.

그리고, 음극층(16)은 알루미늄(Al)과 같은 금속 물질이 이용된다.The cathode layer 16 is made of a metal material such as aluminum (Al).

색 변환층은 녹색 (CdSe/ZnS 의 경우 코어 크기 2.2 nm - 3 nm) 변환을 위한 나노 양자점과 적색(CdSe/ZnS의 경우 코어 크기 4.3 nm - 5 nm)변환을 위한 나노양자점을 각각의 픽셀에 스핀코팅이나 프린팅을 통해 도포할 수 있다. The color conversion layer contains nano quantum dots for green (core size 2.2 nm-3 nm for CdSe / ZnS) conversion and nano quantum dots for red (4.3 nm-5 nm core size for CdSe / ZnS) conversion for each pixel. It can be applied by spin coating or printing.

이때, 나노 양자점 단독 사용이 가능하고 점도 및 안정성 증대를 위해 고분자를 포함하는 복합물질로도 사용이 가능하다. At this time, the nano quantum dots can be used alone and may be used as a composite material containing a polymer for increasing viscosity and stability.

고분자 안에 나노양자점을 분산하게 되면 모양과 크기를 다양하게 조절해서 제작이 가능한 장점이 있으며, 사출(Injection mold)과 같은 방법으로 대량으로 값싸게 만들어낼 수 있는 장점이 있다. Dispersing the nano quantum dots in the polymer has the advantage that it can be produced by varying the shape and size, and has the advantage that it can be made inexpensively in a large amount by an injection mold method.

도 7과 도 8은 종래 기술과 본 발명에 따른 컬러 변환층(cresyl violet)의 흡광 파장에 따른 발광 스펙트럼을 비교한 각각의 그래프도로서, 도 7의 종래 기술의 경우 흡광 파장의 반폭이 좁고, 발광 파형이 넓은 것을 볼 수 있다. 7 and 8 are graphs comparing emission spectra according to absorption wavelengths of a conventional color conversion layer (cresyl violet) according to the present invention. In the prior art of FIG. 7, the half width of the absorption wavelength is narrow. It can be seen that the light emission waveform is wide.

또한 Stokes shift가 작아 에너지가 높은 빛의 변환 효율이 저하됨을 볼 수 있다. 즉 청색의 적색 변환 효율이 매우 저하된다.In addition, the Stokes shift is small, it can be seen that the conversion efficiency of high energy light is reduced. That is, blue red conversion efficiency falls very much.

그런데, 본 발명에 따라 나노 양자점 (CdSe/ZnS)으로 컬러 변환층을 형성한 (b)의 경우 발광 반폭이 좁아 최종 출력되는 광의 색 순도가 높고 도 8에 도시된 바와 같이 청색의 적색 변환 효율이 오히려 증대됨을 볼 수 있다.However, in the case of (b) in which the color conversion layer is formed of nano quantum dots (CdSe / ZnS) according to the present invention, the light emission half-width is narrow, the color purity of the final output light is high, and as shown in FIG. Rather, it can be seen increased.

도 1 내지 도 3은 종래 기술에 따른 디스플레이 소자의 단면 개략도.1 to 3 are cross-sectional schematic diagrams of display elements according to the prior art.

도 4는 종래 기술에 따른 청색광을 발광하는 형광체를 컬러변환물질을 이용하는 방식의 흡광 스펙트럼을 나타낸 그래프도.4 is a graph showing an absorption spectrum of a method using a color converting material of a phosphor emitting blue light according to the prior art;

도 5는 본 발명에 따른 컬러 변환층으로 반도체 나노 양자점을 포함하는 디스플레이소자 단면 개략도.5 is a schematic cross-sectional view of a display device including semiconductor nano quantum dots as a color conversion layer according to the present invention.

도 6은 본 발명에 따른 반도체 나노양자점을 컬러변환물질로 이용하는 방식의 흡광 및 발광 스펙트럼을 나타낸 그래프도.Figure 6 is a graph showing the absorption and emission spectrum of the method using a semiconductor nano quantum dot as a color conversion material according to the present invention.

도 7은 종래 기술에 따른 컬러 변환층의 색 변환 효율을 비교한 그래프도.7 is a graph comparing color conversion efficiency of a color conversion layer according to the prior art.

도 8은 본 발명에 따른 컬러 변환층의 색 변환 효율을 비교한 그래프도.8 is a graph comparing color conversion efficiency of a color conversion layer according to the present invention;

<도면의 주요 부분에 대한 부호 설명><Description of the symbols for the main parts of the drawings>

10 : 양극층10: anode layer

11 : 컬러 필터11: color filter

11a : 적색 필터11a: red filter

11b : 청색 필터11b: blue filter

11c : 녹색 필터11c: green filter

12 : 컬러 변환층12: color conversion layer

12a : 적색 변환층12a: red conversion layer

12b : 녹색 변환층12b: green conversion layer

13 : 정공주입/수송층13: hole injection / transport layer

14 : 발광층14: light emitting layer

15 : 전자주입/수송층15: electron injection / transport layer

16 : 음극층16: cathode layer

Claims (3)

기판 상부에 소정패턴으로 형성된 양극층과, 이 양극층 상부에 순차적으로 형성된 컬러 필터와, 컬러 변환층, 정공주입/수송층, 발광층과 전자주입/수송층, 및 음극층을 포함하는 디스플레이 소자에 있어서, A display element comprising an anode layer formed in a predetermined pattern on a substrate, a color filter sequentially formed on the anode layer, a color conversion layer, a hole injection / transport layer, a light emitting layer, an electron injection / transport layer, and a cathode layer, 상기 컬러 변환층은 다수의 나노 양자점 및 이를 포함하는 복합물질로 형성된 것을 특징으로 하는 컬러 변환층으로 반도체 나노 양자점을 포함하는 디스플레이소자. The color conversion layer is a color conversion layer, characterized in that formed of a plurality of nano quantum dots and a composite material comprising the same. 제 1항에 있어서,The method of claim 1, 상기 발광층은 청색광을 제공함을 특징으로 하는 컬러 변환층으로 반도체 나노 양자점을 포함하는 디스플레이소자. The light emitting layer is a color conversion layer, characterized in that to provide a blue light display device comprising a semiconductor nano quantum dot. 제 2항에 있어서,3. The method of claim 2, 상기 컬러 변환층은 상기 발광층에서 제공된 청색광을 적색과 녹색 광으로 변환하는 적색 변환층과 녹색 변환층을 포함하여 이루어짐을 특징으로 하는 컬러 변환층으로 반도체 나노 양자점을 포함하는 디스플레이소자. The color conversion layer is a color conversion layer comprising a semiconductor nano quantum dot, characterized in that it comprises a red conversion layer and a green conversion layer for converting the blue light provided from the light emitting layer to red and green light.
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Publication number Priority date Publication date Assignee Title
EP2429202A2 (en) 2010-09-13 2012-03-14 LG Electronics Image display apparatus and method for operating image display apparatus
WO2013019030A1 (en) * 2011-07-29 2013-02-07 한양대학교 산학협력단 Organic light-emitting device into which polymer layer for color conversion including quantum dots is inserted
WO2013022215A2 (en) * 2011-08-05 2013-02-14 삼성전자주식회사 Light-emitting device, backlight unit, display device, and manufacturing method thereof
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US20160091757A1 (en) * 2014-09-26 2016-03-31 Japan Display Inc. Display device
KR20160043803A (en) * 2014-10-14 2016-04-22 엘지디스플레이 주식회사 Organic light emitting display device
US9382470B2 (en) 2010-07-01 2016-07-05 Samsung Electronics Co., Ltd. Thiol containing compositions for preparing a composite, polymeric composites prepared therefrom, and articles including the same
WO2016208818A1 (en) * 2015-06-23 2016-12-29 Samsung Electronics Co., Ltd. Display assembly and display device using the same
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US9726928B2 (en) 2011-12-09 2017-08-08 Samsung Electronics Co., Ltd. Backlight unit and liquid crystal display including the same
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US9841625B2 (en) 2015-08-28 2017-12-12 Samsung Display Co., Ltd. Color conversion panel, display device including the same, and manufacturing method of the color conversion panel
US9971076B2 (en) 2015-11-26 2018-05-15 Samsung Display Co., Ltd. Quantum dot color filter and display apparatus including the same
US9971198B2 (en) 2012-12-10 2018-05-15 Samsung Display Co., Ltd. Photoluminescent panel, photoluminescent liquid crystal display device, and method of manufacturing the photoluminescent panel
US10184618B2 (en) 2017-01-19 2019-01-22 Samsung Display Co., Ltd. Color conversion panel and display device including color conversion panel
US10249689B2 (en) 2016-06-29 2019-04-02 Samsung Display Co., Ltd. Color-conversion panel, method of manufacturing the panel, and display device including the panel
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KR20160043803A (en) * 2014-10-14 2016-04-22 엘지디스플레이 주식회사 Organic light emitting display device
CN104576961A (en) * 2014-12-03 2015-04-29 深圳丹邦投资集团有限公司 Quantum-dot-based white OLEG device and manufacturing method thereof
US9927096B2 (en) 2015-06-23 2018-03-27 Samsung Electronics Co., Ltd. Display assembly and display device using the same
WO2016208818A1 (en) * 2015-06-23 2016-12-29 Samsung Electronics Co., Ltd. Display assembly and display device using the same
US9841625B2 (en) 2015-08-28 2017-12-12 Samsung Display Co., Ltd. Color conversion panel, display device including the same, and manufacturing method of the color conversion panel
US10996515B2 (en) 2015-08-28 2021-05-04 Samsung Display Co., Ltd. Color conversion panel, display device comprising the same and manufacturing method of the color conversion panel
US9971076B2 (en) 2015-11-26 2018-05-15 Samsung Display Co., Ltd. Quantum dot color filter and display apparatus including the same
US10249689B2 (en) 2016-06-29 2019-04-02 Samsung Display Co., Ltd. Color-conversion panel, method of manufacturing the panel, and display device including the panel
US10948137B2 (en) 2017-01-19 2021-03-16 Samsung Display Co., Lid. Color conversion panel and display device including color conversion panel
US10184618B2 (en) 2017-01-19 2019-01-22 Samsung Display Co., Ltd. Color conversion panel and display device including color conversion panel
US11608944B2 (en) 2017-01-19 2023-03-21 Samsung Display Co., Ltd. Color conversion panel and display device including color conversion panel
CN106876433A (en) * 2017-03-02 2017-06-20 京东方科技集团股份有限公司 Organic electroluminescence assembly, display panel, display device and lighting device
WO2019124883A1 (en) * 2017-12-18 2019-06-27 삼성전자주식회사 Display apparatus
US11521955B2 (en) 2017-12-18 2022-12-06 Samsung Electronics Co., Ltd. Display apparatus
US11366354B2 (en) 2018-04-25 2022-06-21 Samsung Display Co., Ltd. Display device and method of time division driving display device
US11004892B2 (en) 2018-08-06 2021-05-11 Samsung Display Co., Ltd. Display device
US11682693B2 (en) 2018-08-06 2023-06-20 Samsung Display Co., Ltd. Display device
US11227980B2 (en) 2018-08-29 2022-01-18 Samsung Display Co., Ltd. Display device
CN109888131B (en) * 2019-02-28 2021-08-24 南京京东方显示技术有限公司 Quantum dot display device and manufacturing method thereof
CN109888131A (en) * 2019-02-28 2019-06-14 南京中电熊猫平板显示科技有限公司 A kind of quantum dot display device and its manufacturing method

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