KR20100089606A - Display device using semiconductor quantum dot for color changing layer - Google Patents

Display device using semiconductor quantum dot for color changing layer Download PDF

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Publication number
KR20100089606A
KR20100089606A KR1020090008936A KR20090008936A KR20100089606A KR 20100089606 A KR20100089606 A KR 20100089606A KR 1020090008936 A KR1020090008936 A KR 1020090008936A KR 20090008936 A KR20090008936 A KR 20090008936A KR 20100089606 A KR20100089606 A KR 20100089606A
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KR
South Korea
Prior art keywords
layer
color
light emitting
color conversion
conversion layer
Prior art date
Application number
KR1020090008936A
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Korean (ko)
Inventor
김준동
장원석
정소희
한창수
Original Assignee
한국기계연구원
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Priority to KR1020090008936A priority Critical patent/KR20100089606A/en
Publication of KR20100089606A publication Critical patent/KR20100089606A/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/32Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
    • H01L27/3206Multi-colour light emission
    • H01L27/322Multi-colour light emission using colour filters or colour changing media [CCM]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/5012Electroluminescent [EL] layer
    • H01L51/502Electroluminescent [EL] layer comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/5048Carrier transporting layer
    • H01L51/5056Hole transporting layer
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/5048Carrier transporting layer
    • H01L51/5072Electron transporting layer
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/5088Carrier injection layer
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/5088Carrier injection layer
    • H01L51/5092Electron injection layer

Abstract

PURPOSE: A display device is provided to improve light emitting efficiency by forming a color conversion layer which converts light into various colors into a plurality of nano quantum dots. CONSTITUTION: An anode layer(10) is formed on a substrate in a predetermined pattern. A color filter(11) is formed on the anode layer. A color conversion layer(12) is formed on the color filter. A hole injection/transmission layer(13) is formed on the color conversion layer. A light emitting layer(14) is formed on the hole injection/transmission layer. A cathode layer(16) is formed on the light emitting layer.

Description

DISPLAY DEVICE USING SEMICONDUCTOR QUANTUM DOT FOR COLOR CHANGING LAYER}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a display device, and more particularly, to improve light emission efficiency and color resolution by constructing a color conversion layer that converts the color of light emitted from the light emitting layer and enters a color filter into a semiconductor nano quantum dot and a composite material including the same. The present invention relates to a display device including a semiconductor nano quantum dot as a color conversion layer.

In general, an organic light emitting display (OLED), particularly an active matrix organic light emitting display (AMOLED) has a low work function and an anode formed by a transparent electrode such as ITO. It has an organic light emitting layer structure in which a plurality of organic thin films are laminated between cathodes of metals having a metal.

In the organic light emitting display device, electrons and holes supplied from the outside combine with each other in the light emitting layer to disappear and form an exciton, and the excitons transition from the excited state to the ground state, transferring energy to the fluorescent molecules of the light emitting layer, which emits light. This forms an image.

As such, the organic light emitting display device has advantages of simple structure and high light efficiency by self-emission of organic material.

In an organic light emitting display device, an anode layer formed in a predetermined pattern on a substrate, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and a cathode pattern having a predetermined pattern formed on an upper surface of the electron transport layer are sequentially stacked on the anode layer. It consists of.

The hole transport layer, the light emitting layer and the electron transport layer are organic thin films made of an organic compound.

Among the organic light emitting display devices, in particular, a method of manufacturing a multicolor or full color organic light emitting display device is a method of separately depositing red, green, and blue light emitting materials as shown in FIG. 1 (hereinafter, RGB 3 colors). Independent light emission method), a method of using white light and a color filter as shown in FIG. 2, a method of using blue light and a color changing medium (CCM) as shown in FIG.

The three-color independent emission method of FIG. 1 includes an anode layer 100, a hole injection / transport layer 110 sequentially formed on the anode layer 100, and organic light emitting layers 120 (120a, 120b, 120c) of RGB, respectively. The electron injection / transport layer 130, and the cathode layer 140 is included.

The method using the white light and the color filter of FIG. 2 includes the anode layer 200, the RGB color filters 210: 210a, 210b, and 210c sequentially formed on the anode layer 200, and the hole injection / transport layer 220. , A white light emitting layer 230, an electron injection / transport layer 240, and a cathode layer 250.

The method using the color converting material of FIG. 3 includes an anode layer 300, RGB color filters 310: 310a, 310b, 310c sequentially formed on the anode layer 300, and a color converting layer 320: 320a. And 320b), a hole injection / transport layer 330, a light emitting layer 340, an electron injection / transport layer 350, and a cathode layer 360.

By the way, the three-color independent light emitting method shown in Figure 1 shows a high luminous efficiency but has a disadvantage of poor color resolution, the method of using the white light and the color filter of Figure 2 is a simple manufacturing process at a low cost simple, stable and color High resolution but low luminous efficiency has the disadvantage.

In addition, the method using the blue light and the color changing medium (CCM) shown in FIG. 3 has low cost, simplification of manufacturing process and high color resolution, but low luminous efficiency of the conventional color converting material, and light emission half width. This cursor has low color purity and is not stable.

4 is a graph illustrating absorption and emission spectra of a color conversion material according to the related art in the display device illustrated in FIG. 3.

Referring to FIG. 4, in the case of a conventional phosphor, an absorption waveform and a emission waveform are wide, and an absorption peak and an emission peak are adjacent to each other. As a result, it is difficult to efficiently convert blue light into green and red at the same time in the display device of FIG.

In particular, the efficiency falls in converting blue light into red.

Accordingly, a problem arises in that uniformity is reduced because different materials must be mixed for effective conversion of blue light. In addition, there is a problem that the light emission waveform is wide and the color purity of the light finally output is lowered.

SUMMARY OF THE INVENTION An object of the present invention for solving the problems of the background art, in a display device using a blue light and a color changing medium (CCM), by forming a color converting material of a semiconductor nano quantum dot and a composite material comprising the same The present invention provides a display device including a semiconductor nano quantum dot as a color conversion layer for converting blue light into red and green simultaneously using a material having the same composition and narrowing an emission waveform to increase color purity.

A display device including a semiconductor nano quantum dot as a color conversion layer of the present invention for solving the above problems is an anode layer formed in a predetermined pattern on the substrate, a color filter sequentially formed on the anode layer, a color conversion layer, holes In a display device including an injection / transport layer, a light emitting layer, an electron injection / transport layer, and a cathode layer, the color conversion layer is formed of a layer including a plurality of nano quantum dots.

The emission layer may be formed to provide blue light, and the color conversion layer may include a red conversion layer and a green conversion layer for converting the blue light provided from the emission layer into red and green light.

The present invention provides a color conversion layer for converting light from the light emitting layer into a variety of colors to a plurality of nano quantum dots to absorb light in a variety of wavelengths to increase the efficiency of light emission, narrowing the light emission waveform to increase the color implementation ability There is this. In addition, semiconductor nano quantum dots combined with soft materials can be applied to flexible light emitting devices.

5 is a schematic cross-sectional view of a display device including semiconductor nano quantum dots as a color conversion layer according to the present invention.

Referring to FIG. 5, the present invention provides an anode layer 10 formed in a predetermined pattern on a substrate, color filters 11: 11a, 11b, and 11c sequentially formed on the anode layer 10, and color conversion. A display element comprising a layer 12: 12a, 12b, a hole injection / transport layer 13, a light emitting layer 14, an electron injection / transport layer 15, and a cathode layer 16.

Here, the anode layer 16 is a material having transparency and conductivity characteristics, for example, indium-tin oxide (ITO), fluorine doped tin oxide (FTO), ZnO- (Ga 2 O 3 or Al 2 O 3 ), SnO 2 -Sb 2 O 3 or the like can be used, preferably made of ITO.

The color filter 11 implements color by adjusting red, green, and blue, and includes a red filter 11a, a blue filter 11b, and a green filter 11c.

The color conversion layers 12: 12a and 12b convert the light provided from the light emitting layer 14 to red, green, and blue primary colors, and the light emitting layer 14 emits blue light. In this case, the red conversion layer 12a and the green conversion layer 12b may be formed to have a predetermined arrangement pattern.

According to a characteristic aspect of the present invention, the color conversion layer 12 is formed of a plurality of semiconductor nano quantum dots or a polymer layer including the same.

That is, in the case of using a phosphor as a conventional color changing medium (CCM), although the absorption width is narrow, wavelength conversion is difficult and the light emission waveform is wide, the color purity is degraded. However, the present invention uses a plurality of nano quantum dots as the color conversion layer. As shown in FIG. 5, the light absorption width is widened and the light emission waveform is narrowed, thereby improving color emission efficiency.

It is also easy to fabricate on any substrate and allows for a low cost process.

In this case, the quantum dots may be formed of group II-VI, group III-V, group IV-VI, group IV semiconductor compounds and mixtures thereof, and specifically, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, InP, It may be selected from the group consisting of InAs or a mixture thereof.

In addition, the quantum dots may be formed of a core structure or a core-shell structure, but having a core-shell structure is advantageous for increasing luminous efficiency and increasing light stability.

In addition, as the hole injection / transport layer 13, TPD, which is a diamine derivative, is used.

Meanwhile, the light emitting layer 14 preferably includes a blue color light emitting material having the highest energy among red, green, and blue colors.

In other words, since it is possible to convert light emission into a color having a relatively long wavelength only by using light having a high energy (short wavelength), it is preferable to include an adult color light emitting material.

The electron injection / transport layer 15 is preferably made of a material having a relatively good electron trapping ability, [6,6] -phenyl-C 71 butyric acid methyl ester (PC 70 BM) or C 60 , CNT, It may be made of an inorganic material such as TiO 2 , ZnO and the like.

The cathode layer 16 is made of a metal material such as aluminum (Al).

The color conversion layer contains nano quantum dots for green (core size 2.2 nm-3 nm for CdSe / ZnS) conversion and nano quantum dots for red (4.3 nm-5 nm core size for CdSe / ZnS) conversion for each pixel. It can be applied by spin coating or printing.

At this time, the nano quantum dots can be used alone and may be used as a composite material containing a polymer for increasing viscosity and stability.

Dispersing the nano quantum dots in the polymer has the advantage that it can be produced by varying the shape and size, and has the advantage that it can be made inexpensively in a large amount by an injection mold method.

7 and 8 are graphs comparing emission spectra according to absorption wavelengths of a conventional color conversion layer (cresyl violet) according to the present invention. In the prior art of FIG. 7, the half width of the absorption wavelength is narrow. It can be seen that the light emission waveform is wide.

In addition, the Stokes shift is small, it can be seen that the conversion efficiency of high energy light is reduced. That is, blue red conversion efficiency falls very much.

However, in the case of (b) in which the color conversion layer is formed of nano quantum dots (CdSe / ZnS) according to the present invention, the light emission half-width is narrow, the color purity of the final output light is high, and as shown in FIG. Rather, it can be seen increased.

1 to 3 are cross-sectional schematic diagrams of display elements according to the prior art.

4 is a graph showing an absorption spectrum of a method using a color converting material of a phosphor emitting blue light according to the prior art;

5 is a schematic cross-sectional view of a display device including semiconductor nano quantum dots as a color conversion layer according to the present invention.

Figure 6 is a graph showing the absorption and emission spectrum of the method using a semiconductor nano quantum dot as a color conversion material according to the present invention.

7 is a graph comparing color conversion efficiency of a color conversion layer according to the prior art.

8 is a graph comparing color conversion efficiency of a color conversion layer according to the present invention;

<Description of the symbols for the main parts of the drawings>

10: anode layer

11: color filter

11a: red filter

11b: blue filter

11c: green filter

12: color conversion layer

12a: red conversion layer

12b: green conversion layer

13: hole injection / transport layer

14: light emitting layer

15: electron injection / transport layer

16: cathode layer

Claims (3)

  1. A display element comprising an anode layer formed in a predetermined pattern on a substrate, a color filter sequentially formed on the anode layer, a color conversion layer, a hole injection / transport layer, a light emitting layer, an electron injection / transport layer, and a cathode layer,
    The color conversion layer is a color conversion layer, characterized in that formed of a plurality of nano quantum dots and a composite material comprising the same.
  2. The method of claim 1,
    The light emitting layer is a color conversion layer, characterized in that to provide a blue light display device comprising a semiconductor nano quantum dot.
  3. 3. The method of claim 2,
    The color conversion layer is a color conversion layer comprising a semiconductor nano quantum dot, characterized in that it comprises a red conversion layer and a green conversion layer for converting the blue light provided from the light emitting layer to red and green light.
KR1020090008936A 2009-02-04 2009-02-04 Display device using semiconductor quantum dot for color changing layer KR20100089606A (en)

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Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2429202A2 (en) 2010-09-13 2012-03-14 LG Electronics Image display apparatus and method for operating image display apparatus
WO2013019030A1 (en) * 2011-07-29 2013-02-07 한양대학교 산학협력단 Organic light-emitting device into which polymer layer for color conversion including quantum dots is inserted
WO2013022215A2 (en) * 2011-08-05 2013-02-14 삼성전자주식회사 Light-emitting device, backlight unit, display device, and manufacturing method thereof
CN103022287A (en) * 2012-11-15 2013-04-03 璨圆光电股份有限公司 Multi-wavelength LED (light-emitting diode) chip
WO2013140083A1 (en) 2012-03-19 2013-09-26 Solarwell Light-emitting device containing flattened anisotropic colloidal semiconductor nanocrystals and processes for manufacturing such devices
KR20130111483A (en) * 2012-03-30 2013-10-10 주식회사 엘지화학 Organic light emitting device
CN104576961A (en) * 2014-12-03 2015-04-29 深圳丹邦投资集团有限公司 Quantum-dot-based white OLEG device and manufacturing method thereof
WO2015152535A1 (en) * 2014-04-01 2015-10-08 코닝정밀소재 주식회사 Color-converting substrate for light-emitting diode and method for producing same
US20160091757A1 (en) * 2014-09-26 2016-03-31 Japan Display Inc. Display device
US9382470B2 (en) 2010-07-01 2016-07-05 Samsung Electronics Co., Ltd. Thiol containing compositions for preparing a composite, polymeric composites prepared therefrom, and articles including the same
WO2016208818A1 (en) * 2015-06-23 2016-12-29 Samsung Electronics Co., Ltd. Display assembly and display device using the same
CN106876433A (en) * 2017-03-02 2017-06-20 京东方科技集团股份有限公司 Organic electroluminescence assembly, display panel, display device and lighting device
US9726928B2 (en) 2011-12-09 2017-08-08 Samsung Electronics Co., Ltd. Backlight unit and liquid crystal display including the same
US9753324B2 (en) 2014-09-04 2017-09-05 Samsung Electronics Co., Ltd. Photoluminescent liquid crystal display
US9841625B2 (en) 2015-08-28 2017-12-12 Samsung Display Co., Ltd. Color conversion panel, display device including the same, and manufacturing method of the color conversion panel
US9971076B2 (en) 2015-11-26 2018-05-15 Samsung Display Co., Ltd. Quantum dot color filter and display apparatus including the same
US9971198B2 (en) 2012-12-10 2018-05-15 Samsung Display Co., Ltd. Photoluminescent panel, photoluminescent liquid crystal display device, and method of manufacturing the photoluminescent panel
US10184618B2 (en) 2017-01-19 2019-01-22 Samsung Display Co., Ltd. Color conversion panel and display device including color conversion panel
US10249689B2 (en) 2016-06-29 2019-04-02 Samsung Display Co., Ltd. Color-conversion panel, method of manufacturing the panel, and display device including the panel
WO2019124883A1 (en) * 2017-12-18 2019-06-27 삼성전자주식회사 Display apparatus
US10371875B2 (en) 2014-09-03 2019-08-06 Samsung Display Co., Ltd. Display device having a color conversion layer

Cited By (27)

* Cited by examiner, † Cited by third party
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US9701901B2 (en) 2010-07-01 2017-07-11 Samsung Electronics Co., Ltd. Thiol containing compositions for preparing a composite, polymeric composites prepared therefrom, and articles including the same
US9382470B2 (en) 2010-07-01 2016-07-05 Samsung Electronics Co., Ltd. Thiol containing compositions for preparing a composite, polymeric composites prepared therefrom, and articles including the same
EP2429202A2 (en) 2010-09-13 2012-03-14 LG Electronics Image display apparatus and method for operating image display apparatus
WO2013019030A1 (en) * 2011-07-29 2013-02-07 한양대학교 산학협력단 Organic light-emitting device into which polymer layer for color conversion including quantum dots is inserted
KR101237124B1 (en) * 2011-07-29 2013-02-25 한양대학교 산학협력단 Organic Light Emitting Diode Insulted With Color-converting Polymer Layer Containing Quantum Dot
WO2013022215A2 (en) * 2011-08-05 2013-02-14 삼성전자주식회사 Light-emitting device, backlight unit, display device, and manufacturing method thereof
WO2013022215A3 (en) * 2011-08-05 2013-06-13 삼성전자주식회사 Light-emitting device, backlight unit, display device, and manufacturing method thereof
US9726928B2 (en) 2011-12-09 2017-08-08 Samsung Electronics Co., Ltd. Backlight unit and liquid crystal display including the same
WO2013140083A1 (en) 2012-03-19 2013-09-26 Solarwell Light-emitting device containing flattened anisotropic colloidal semiconductor nanocrystals and processes for manufacturing such devices
KR20130111483A (en) * 2012-03-30 2013-10-10 주식회사 엘지화학 Organic light emitting device
CN103022287A (en) * 2012-11-15 2013-04-03 璨圆光电股份有限公司 Multi-wavelength LED (light-emitting diode) chip
US9971198B2 (en) 2012-12-10 2018-05-15 Samsung Display Co., Ltd. Photoluminescent panel, photoluminescent liquid crystal display device, and method of manufacturing the photoluminescent panel
US10481432B2 (en) 2012-12-10 2019-11-19 Samsung Display Co., Ltd. Photoluminescent panel, photoluminescent liquid crystal display device, and method of manufacturing the photoluminescent panel
WO2015152535A1 (en) * 2014-04-01 2015-10-08 코닝정밀소재 주식회사 Color-converting substrate for light-emitting diode and method for producing same
US9893245B2 (en) 2014-04-01 2018-02-13 Corning Precision Materials Co., Ltd. Color-converting substrate for light-emitting diode and method for producing same
US10371875B2 (en) 2014-09-03 2019-08-06 Samsung Display Co., Ltd. Display device having a color conversion layer
US9753324B2 (en) 2014-09-04 2017-09-05 Samsung Electronics Co., Ltd. Photoluminescent liquid crystal display
US20160091757A1 (en) * 2014-09-26 2016-03-31 Japan Display Inc. Display device
CN104576961A (en) * 2014-12-03 2015-04-29 深圳丹邦投资集团有限公司 Quantum-dot-based white OLEG device and manufacturing method thereof
US9927096B2 (en) 2015-06-23 2018-03-27 Samsung Electronics Co., Ltd. Display assembly and display device using the same
WO2016208818A1 (en) * 2015-06-23 2016-12-29 Samsung Electronics Co., Ltd. Display assembly and display device using the same
US9841625B2 (en) 2015-08-28 2017-12-12 Samsung Display Co., Ltd. Color conversion panel, display device including the same, and manufacturing method of the color conversion panel
US9971076B2 (en) 2015-11-26 2018-05-15 Samsung Display Co., Ltd. Quantum dot color filter and display apparatus including the same
US10249689B2 (en) 2016-06-29 2019-04-02 Samsung Display Co., Ltd. Color-conversion panel, method of manufacturing the panel, and display device including the panel
US10184618B2 (en) 2017-01-19 2019-01-22 Samsung Display Co., Ltd. Color conversion panel and display device including color conversion panel
CN106876433A (en) * 2017-03-02 2017-06-20 京东方科技集团股份有限公司 Organic electroluminescence assembly, display panel, display device and lighting device
WO2019124883A1 (en) * 2017-12-18 2019-06-27 삼성전자주식회사 Display apparatus

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