KR20100079165A - Apparatus for chemical mechanical polishing, membrane and polishing head for chemical mechanical polishing - Google Patents

Apparatus for chemical mechanical polishing, membrane and polishing head for chemical mechanical polishing Download PDF

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Publication number
KR20100079165A
KR20100079165A KR1020080137581A KR20080137581A KR20100079165A KR 20100079165 A KR20100079165 A KR 20100079165A KR 1020080137581 A KR1020080137581 A KR 1020080137581A KR 20080137581 A KR20080137581 A KR 20080137581A KR 20100079165 A KR20100079165 A KR 20100079165A
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KR
South Korea
Prior art keywords
membrane
wafer
thickness
chemical mechanical
mechanical polishing
Prior art date
Application number
KR1020080137581A
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Korean (ko)
Inventor
윤대령
Original Assignee
주식회사 동부하이텍
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Application filed by 주식회사 동부하이텍 filed Critical 주식회사 동부하이텍
Priority to KR1020080137581A priority Critical patent/KR20100079165A/en
Publication of KR20100079165A publication Critical patent/KR20100079165A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The chemical mechanical polishing apparatus according to the present invention includes a support on which a plurality of holes are formed for application of pressure, and a circular membrane provided under the support to be in direct contact with the wafer, wherein the thickness of the edge portion is the thickness of the center portion. It is formed thinner.

In addition, the polishing head according to the present invention includes a support in which a plurality of holes are formed for application of pressure, and a circular membrane provided under the support to be in direct contact with the wafer, wherein the thickness of the edge portion is the thickness of the center portion. It is formed thinner than the portion, and in the membrane according to the present invention, the membrane is formed such that the thickness of the edge portion is thinner than that of the central portion.

As a result, pressure is stably applied to the edge of the wafer in the chemical mechanical polishing process of the wafer, thereby improving the yield of the wafer while simultaneously processing the wafer uniformly.

Description

Chemical mechanical polishing apparatus, membranes and polishing heads for the same, and the like.

The present invention relates to a chemical mechanical polishing (CMP) apparatus, a membrane and a polishing head used therein, and specifically, a membrane and a polishing head having a thickness of an edge portion of the membrane thinner than a thickness of a central portion thereof, and a chemical mechanical polishing method using the same. It relates to a polishing apparatus.

The chemical mechanical polishing process has been introduced due to the demand for strict wide area planarization and depth of focus as semiconductor devices have a multi-layered wiring structure, and the demand increases rapidly as semiconductor devices become more miniaturized and wafers become larger. Doing.

The chemical mechanical polishing process is a process in which mechanical polishing by friction between a polishing head and a wafer surface and chemical polishing by a reaction of a slurry, which is a chemical abrasive, occur simultaneously. The apparatus used for this chemical mechanical polishing process is shown in FIG.

As shown in FIG. 1, the chemical mechanical polishing apparatus 10 is composed of a polishing table 11, a polishing pad 12, and a polishing head 13. The polishing table 11 has a flat top surface and is provided with a polishing pad 12 thereon. The polishing head 13 sucks and fixes the wafer 20 on the lower surface and rubs the surface of the wafer 20 with the polishing pad 12 through pressure, rotation, and vibration. At this time, the slurry 14 is supplied to the surface of the polishing pad 12.

As shown in FIG. 2, the polishing head 13 fixing the wafer 20 in the chemical mechanical polishing process is largely composed of a lower assembly 30 and an upper assembly 40. Here, the lower assembly 30 of the polishing head 13 is composed of a retainer ring 31, a membrane 32, and a support 33. The polishing head 13 sucks and fixes the wafer 20 with a vacuum suction force. The membrane 32 is a circular thin rubber film, which comes into direct contact with the wafer 20 when the polishing head 13 adsorbs and fixes the wafer 20. The retainer ring 31 is an annular ring surrounding the support 33 to prevent the wafer 20 from being released due to the rotation of the polishing head 13 during the polishing process.

The support body 33 on which the wafer 20 is adsorbed and fixed is lowered inside the retainer ring 31 toward the polishing pad (12 in FIG. 1) in order to proceed with the polishing process. At this time, pressure is applied through the holes 33a formed in the support 33, thereby applying pressure to the wafer 20 as the membrane 32 expands.

Here, the membrane 32 expands as a whole by the application of pressure. The membrane 32 is constrained to the support 33 while the portion in contact with the wafer 20 under pressure is formed to have a constant thickness. The edge portion 32a of the is limited in expansion than the central portion 32b thereof. Thereby, between the edge part 32a of the membrane 32 and the center part 32b, the part 32c which the membrane 32 cannot apply pressure to the wafer 20 by the lowering of the support body 33 is Will occur.

As a result, as shown in FIG. 3, after the polishing process, the edge E of the wafer 20 is not polished properly, so that a circular strip having a relatively thick thickness is formed. Here, the processing of such a wafer 20 makes the wafer 20 uneven, which results in a decrease in wafer 20 yield.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and enables the stable application of pressure to the edge of the wafer during the wafer polishing process, thereby ensuring uniform polishing of the wafer and improving the yield of the wafer. It is an object of the present invention to provide a polishing apparatus, a membrane and a polishing head used therein.

The chemical mechanical polishing apparatus according to the present invention includes a support on which a plurality of holes are formed for application of pressure, and a circular membrane provided under the support to be in direct contact with the wafer, wherein the thickness of the edge portion is the thickness of the center portion. It is formed thinner.

Here, the membrane may gradually become thinner from the central portion to the edge portion. At this time, as the membrane goes from the center portion to the edge portion, the reduction rate of the thickness may be changed.

In addition, the thickness of the membrane may vary continuously, and the membrane is brought into contact with the wafer at a lower portion of the support by the application of pressure.

The polishing head according to the present invention includes a support in which a plurality of holes are formed for application of pressure, and a circular membrane provided under the support to be in direct contact with the wafer. It is thinly formed.

In addition, the membrane according to the present invention, in the membrane included in the chemical mechanical polishing apparatus, the thickness of the edge portion is formed thinner than the thickness of the central portion.

The chemical mechanical polishing apparatus according to the present invention, the membrane and the polishing head used therein to ensure that the pressure is stably applied to the edge of the wafer in the chemical mechanical polishing process of the wafer, thereby ensuring a uniform processing of the wafer and at the same time improve the yield of the wafer It is effective to let.

A chemical mechanical polishing apparatus, a membrane and a polishing head used therein according to embodiments of the present invention will be described in detail with reference to the accompanying drawings.

4 is a front view of the membrane according to the first embodiment of the present invention, FIG. 5 is a front view of the polishing head mounted with the membrane according to the first embodiment of the present invention, and FIG. 6 is a second embodiment of the present invention. 7 is a front view of the membrane according to the third embodiment of the present invention.

Hereinafter, the first to third embodiments of the present invention will be mainly described with respect to the membrane, the membrane-mounted polishing head to the chemical mechanical polishing apparatus according to the embodiments of the present invention is the technical idea of the present invention It will be included within the scope of.

As shown in Fig. 4 or 5, the membrane 40 according to the first embodiment of the present invention is formed in a circular shape as a whole, a membrane support 41 for supporting the membrane 40 to the support 43 And a membrane contact 42 which contacts the wafer 20 directly at the membrane.

Here, the membrane 40, specifically the membrane contact 42, can be entirely circular, including an edge 42a and a central portion 42b in a circular shape.

At this time, the thickness of the edge portion 42a of the membrane 40 is made thinner than the thickness of the central portion 42b. According to the first embodiment of the present invention, the membrane 40 is the central portion of the membrane contact portion 42. It becomes so that the thickness becomes thin gradually from 42b to the edge part 42a.

Specifically, as shown in FIG. 5, the membrane 40 is in contact with the wafer 20 while expanding by the application of pressure while the membrane support 41 is supported by the support 43. Here, in the membrane contact portion 42 which comes into contact with the wafer 20, the thickness is gradually thinned from the central portion 42b to the edge portion 42a, and the membrane 40 is applied by applying pressure. As it expands, it extends more from the central portion 42b to the edge portion 42a.

Moreover, in the membrane contact portion 42 of the membrane 40, the difference in its thickness causes the elongation at the edge portion 42a to be maximum, which in turn leads to the edge portion of the membrane 40 up to the edge of the wafer 20. The 42a can be brought into contact so that it can be uniformly processed to the edge of the wafer 20 during the chemical mechanical polishing process.

In addition, as shown in FIG. 6, the membrane according to the second embodiment of the present invention will be described in detail below, and a detailed description of parts overlapping with the first embodiment of the present invention will be omitted. Hereinafter, in the second embodiment of the present invention, the membrane will be described in detail, but the technical idea extends to the polishing head or the chemical mechanical polishing apparatus using the membrane.

As shown in FIG. 6, the membrane 50 according to the second embodiment of the present invention is formed such that its thickness gradually becomes thinner from the central portion 52b of the membrane contact portion 52 toward the edge portion 52a. The thickness becomes thinner from the central portion 52b to the edge portion 52b.

Specifically, in the second embodiment of the present invention, the thickness becomes thinner with a predetermined slope from the central portion 52b to the edge portion 52a with a predetermined slope, and then the thickness becomes thinner more steeply from the predetermined portion to the edge portion 52b. Can be formed.

Here, the predetermined part may be set differently according to the process conditions such as the strength of the applied pressure, and may be determined in consideration of the design process of the initial process. In addition, in the second embodiment of the present invention has been described that the change rate of the thickness of the membrane contact portion 52 is changed once, it may be changed more than once, of course, it can be set differently depending on the process conditions .

In addition, as shown in FIG. 7, the membrane according to the third embodiment of the present invention will be described in detail below, and detailed description of parts overlapping with the above embodiments of the present invention will be omitted. Hereinafter, in the third embodiment of the present invention, the membrane will be described in detail, but the technical concept extends to the polishing head or the chemical mechanical polishing apparatus using the membrane.

As shown in FIG. 7, the membrane 60 according to the third embodiment of the present invention has a constant thickness of the membrane 60 from a central portion 62b of the membrane contact portion 62 to a predetermined portion, and the predetermined portion. The edge portion 62a may be made thinner than the thickness from the central portion 62b to a predetermined portion.

Here, in the third embodiment of the present invention, the predetermined portion, that is, the portion where the thickness of the membrane 60 changes from the central portion 62b to the edge portion 62a may be formed to be smoothly changed to be continuous, where the membrane 60 The degree of change of the thickness) may be formed differently depending on the design conditions. In other words, the thickness of the membrane 60 may be changed in a range that does not prevent the membrane 60 from contacting the wafer (20 in FIG. 5) to perform the chemical mechanical polishing process. It may be formed differently depending on the process conditions.

In addition, the predetermined part may also be set differently according to the process conditions, and of course, may be determined by considering it in the design stage of the initial process. In addition, in the third embodiment of the present invention, although the change rate of the thickness of the membrane contact portion 62 has been described once, it may be changed two or more times, which may be set differently according to the process conditions. .

Hereinafter, the operation of the polishing head to the chemical mechanical polishing apparatus according to the embodiments of the present invention will be described. In describing this, the operations of the polishing head to the chemical mechanical polishing apparatus including the membranes 40, 50, and 60 according to the embodiments of the present invention have many overlapping parts, according to the first embodiment of the present invention. Only the case where the membrane 40 is provided will be described.

As shown in FIG. 5, in the polishing head included in the chemical mechanical polishing apparatus, the substructure 70 includes the support 43, the membrane 40, and the retaining ring 45 having the holes 43a formed therein. Include.

The chemical mechanical polishing process is performed while the wafer 20 is adsorbed and supported by the retaining ring 45. At this time, air or air pressure is injected through the holes 43a formed in the support 43. This causes the membrane 40 to expand.

At this time, when the membrane 40 expands due to the injection of air or air pressure, the edge portion 42a of the membrane 40 is formed thinner than the center portion 42b. More elongation, thereby allowing contact to the edge of the wafer 20.

That is, while the membrane 40 is in uniform contact over the entire area of the wafer 20, the chemical mechanical polishing process is performed by the rotation of the polishing head or the like, whereby the edge of the wafer 20 is uniformly processed. It can be utilized to process the wafer 20 with improved yield.

In the above, only exemplary embodiments of the present invention have been described, but the technical scope of the present invention may be easily changed by those skilled in the art, such as addition of well-known or well-known technologies. Thoughts are going crazy.

1 is a simplified diagram of a typical chemical mechanical polishing apparatus,

2 is a cross-sectional view to a partially enlarged view of a polishing head in the chemical mechanical polishing apparatus according to the prior art,

3 is a plan view of a wafer processed according to the prior art,

4 is a front view of a membrane according to a first embodiment of the present invention,

5 is a front view of the polishing head with a membrane according to the first embodiment of the present invention,

6 is a front view of a membrane according to a second embodiment of the present invention,

7 is a front view of a membrane according to a third embodiment of the present invention.

<Description of main parts of drawing>

20: wafer 40, 50, 60: membrane

41, 51, 61: membrane support 42, 52, 62: membrane contact

42a, 52a, 62a: edge portion 42b, 52b, 62b: center portion

Claims (7)

A support on which a plurality of holes are formed for application of pressure; A circular membrane provided under the support to be in direct contact with the wafer, The membrane has a thickness of the edge portion is formed thinner than the thickness of the central portion Chemical mechanical polishing device. The method of claim 1, The membrane gradually becomes thinner from the center to the edges. Chemical mechanical polishing device. The method of claim 2, As the membrane goes from the center portion to the edge portion, the rate of decrease in thickness is changed. Chemical mechanical polishing device. The method of claim 3, wherein The thickness of the membrane varies continuously Chemical mechanical polishing equipment. The method of claim 1, The membrane is spaced apart from the bottom of the support by the application of pressure is in contact with the wafer Chemical mechanical polishing device. A support on which a plurality of holes are formed for application of pressure; A circular membrane provided under the support to be in direct contact with the wafer, The membrane has a thickness of the edge portion is formed thinner than the thickness of the central portion Polishing head. In the membrane included in the chemical mechanical polishing device, The membrane has a thickness of the edge portion is formed thinner than the thickness of the central portion Membrane.
KR1020080137581A 2008-12-30 2008-12-30 Apparatus for chemical mechanical polishing, membrane and polishing head for chemical mechanical polishing KR20100079165A (en)

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Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
KR1020080137581A KR20100079165A (en) 2008-12-30 2008-12-30 Apparatus for chemical mechanical polishing, membrane and polishing head for chemical mechanical polishing

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101395380B1 (en) * 2013-04-18 2014-05-16 주식회사 케이씨텍 Membrane in carrier head
JP2015071197A (en) * 2013-10-02 2015-04-16 株式会社Sumco Membrane, polishing head, device and method of polishing workpiece, and silicon wafer
CN111469044A (en) * 2020-05-18 2020-07-31 中国科学院微电子研究所 Diaphragm plate, grinding head and chemical mechanical grinding device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101395380B1 (en) * 2013-04-18 2014-05-16 주식회사 케이씨텍 Membrane in carrier head
JP2015071197A (en) * 2013-10-02 2015-04-16 株式会社Sumco Membrane, polishing head, device and method of polishing workpiece, and silicon wafer
CN111469044A (en) * 2020-05-18 2020-07-31 中国科学院微电子研究所 Diaphragm plate, grinding head and chemical mechanical grinding device

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