KR20100077566A - Image sensor and method for manufacturing thereof - Google Patents
Image sensor and method for manufacturing thereof Download PDFInfo
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- KR20100077566A KR20100077566A KR1020080135536A KR20080135536A KR20100077566A KR 20100077566 A KR20100077566 A KR 20100077566A KR 1020080135536 A KR1020080135536 A KR 1020080135536A KR 20080135536 A KR20080135536 A KR 20080135536A KR 20100077566 A KR20100077566 A KR 20100077566A
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- light blocking
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- wiring
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000010410 layer Substances 0.000 claims description 79
- 230000000903 blocking effect Effects 0.000 claims description 23
- 238000005468 ion implantation Methods 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 238000000926 separation method Methods 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 3
- 239000011229 interlayer Substances 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 230000015556 catabolic process Effects 0.000 abstract description 5
- 238000006731 degradation reaction Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- -1 hydrogen ions Chemical class 0.000 description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Embodiments relate to an image sensor and a manufacturing method thereof.
An image sensor is a semiconductor device that converts an optical image into an electrical signal, and is classified into a charge coupled device (CCD) image sensor and a CMOS image sensor (CIS). .
In the prior art, a photodiode is formed on a substrate by ion implantation. However, as the size of the photodiode gradually decreases for the purpose of increasing the number of pixels without increasing the chip size, the image quality decreases due to the reduction of the area of the light receiver.
In addition, since the stack height is not reduced as much as the area of the light receiving unit is reduced, the number of photons incident on the light receiving unit is also decreased due to diffraction of light called an airy disk.
One alternative to overcome this is to deposit photodiodes with amorphous Si, or read-out circuitry using wafer-to-wafer bonding such as silicon substrates. And photodiodes are formed on the lead-out circuit (hereinafter referred to as "three-dimensional image sensor"). The photodiode and lead-out circuit are connected via a metal line.
On the other hand, according to the prior art according to the development of the high-resolution image sensor in the three-dimensional image sensor, the size of the light receiving portion is reduced and the relative height of the light receiving portion is increased. Accordingly, there is a problem that all the light entering the light-receiving portion enters the adjacent light-receiving portion without changing into photoelectrons, thereby causing a cross talk phenomenon.
In addition, according to the related art, since both the source and the drain of both ends of the transfer transistor of the readout circuit are doped with a high concentration of N-type, there is a problem that charge sharing occurs. When charge sharing occurs, the sensitivity of the output image is lowered and image errors may occur.
In addition, according to the related art, a dark current is generated between the photodiode and the lead-out circuit and the photocharge is not smoothly moved, and saturation and sensitivity are decreased.
Embodiments provide an image sensor and a method of manufacturing the same, in which a crosstalk phenomenon does not occur while increasing the fill factor.
In addition, the embodiment is to provide an image sensor and a method of manufacturing the same that can increase the charge factor (Charge Sharing) does not occur.
In addition, the embodiment of the present invention provides an image sensor capable of minimizing dark current sources and preventing saturation and degradation of sensitivity by creating a smooth movement path of photo charge between the photodiode and the lead-out circuit. To provide a manufacturing method.
The image sensor according to the embodiment includes a readout circuitry formed on the first substrate; An electrical junction region formed on the first substrate to be electrically connected to the lead-out circuit; Wiring formed on the electrical junction region; An image sensing device formed on the wiring; And a light blocking layer formed between the image sensing unit.
In addition, the manufacturing method of the image sensor according to the embodiment comprises the steps of forming a readout circuitry (Readout Circuitry) on the first substrate; Forming an electrical junction region on the first substrate, the electrical junction region being electrically connected to the lead-out circuit; Forming a wire on the electrical junction region; Forming an image sensing device on the wiring; And forming a light blocking layer between the image sensing units.
According to the image sensor and the manufacturing method thereof according to the embodiment, crosstalk between pixels can be prevented by forming a light blocking layer between the image sensing units.
In addition, according to the embodiment, the device may be designed such that there is a potential difference between the source and the drain across the transfer transistor Tx, thereby enabling full dumping of the photo charge.
In addition, according to the embodiment, the charge connection region is formed between the photodiode and the lead-out circuit to create a smooth movement path of the photo charge, thereby minimizing the dark current source, and reducing saturation and sensitivity. You can prevent it.
Hereinafter, an image sensor and a method of manufacturing the same according to an embodiment will be described in detail with reference to the accompanying drawings.
In the description of the embodiments, where it is described as being formed "on / under" of each layer, it is understood that the phase is formed directly or indirectly through another layer. It includes everything.
The present invention is not limited to the CMOS image sensor, and may be applied to an image sensor requiring a photodiode.
(First embodiment)
1 is a cross-sectional view of an image sensor according to a first embodiment.
The image sensor according to the first embodiment includes a light blocking layer formed between the
In addition, the first embodiment includes a
The
Unexplained reference numerals among the reference numerals of FIG. 1 will be described in the following manufacturing method.
Hereinafter, a manufacturing method of an image sensor according to an exemplary embodiment will be described with reference to FIGS. 2 to 4. FIG. 2 is a detailed view of the
Hereinafter, FIG. 2 will be described in detail.
First, as shown in FIG. 2, the
The forming of the lead-out
For example, the
According to the embodiment, the device can be designed such that there is a voltage difference between the source / drain across the transfer transistor Tx to enable full dumping of the photo charge. Accordingly, as the photo charge generated in the photodiode is dumped into the floating diffusion region, the output image sensitivity may be increased.
That is, the embodiment forms the
Hereinafter, the dumping structure of the photocharge of the embodiment will be described in detail.
Unlike the floating diffusion (FD) 131 node, which is an N + function in the embodiment, the P / N /
Specifically, the electrons generated by the
Since the maximum voltage value of the P0 / N- / P-
That is, in the embodiment, the reason why the P0 / N- / P-well junction, not the N + / P-well junction, is formed in the silicon sub, which is the
Therefore, unlike the case where the photodiode is simply connected by N + junction as in the prior art, the embodiment can avoid problems such as degradation of saturation and degradation of sensitivity.
Next, according to the embodiment, the first
To this end, the first embodiment may form an n + doped region as the first
Meanwhile, in order to minimize the first
That is, as in the first embodiment, the reason for locally N + doping only to the contact forming part is to facilitate the formation of ohmic contact while minimizing the dark signal. As in the prior art, when N + Doping the entire Tx Source part, the dark signal may increase due to the substrate surface dangling bond.
Next, the
Next, as shown in FIG. 3, a crystalline semiconductor layer (not shown) is formed on the
For example, a crystalline semiconductor layer is formed on the
Next, the
Thereafter, a first conductivity type
According to the embodiment, the thickness of the first conductivity type
Thereafter, the first embodiment may further include forming a high concentration of the first conductivity type
Next, as shown in FIG. 4, the
Thereafter, the hydrogen
Thereafter, an
In an embodiment, the
For example, the
According to the image sensor and the manufacturing method thereof according to the embodiment, crosstalk between pixels can be prevented by forming a light blocking layer between the image sensing units.
In an embodiment, the
Next, the
According to the image sensor and the manufacturing method thereof according to the embodiment, crosstalk between pixels can be prevented by forming a light blocking layer between the image sensing units.
In addition, according to the embodiment, the device may be designed such that there is a potential difference between the source and the drain across the transfer transistor Tx, thereby enabling full dumping of the photo charge.
In addition, according to the embodiment, the charge connection region is formed between the photodiode and the lead-out circuit to create a smooth movement path of the photo charge, thereby minimizing the dark current source, and reducing saturation and sensitivity. You can prevent it.
(2nd Example)
5 is a cross-sectional view of the image sensor according to the second embodiment, which is a detailed view of the
The second embodiment can employ the technical features of the first embodiment. Hereinafter, description will be given focusing on differences from the first embodiment.
Unlike the first embodiment, the second embodiment is an example in which the first
According to an embodiment, an N +
In addition, when the N +
Accordingly, in the second embodiment, the
According to the second embodiment, the E-Field of the Si surface does not occur, which may contribute to the reduction of dark current of the 3-D integrated CIS.
The present invention is not limited to the described embodiments and drawings, and various other embodiments are possible within the scope of the claims.
1 is a sectional view of an image sensor according to a first embodiment;
2 to 4 are process cross-sectional views of a method of manufacturing the image sensor according to the first embodiment.
5 is a sectional view of an image sensor according to a second embodiment;
Claims (19)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080135536A KR20100077566A (en) | 2008-12-29 | 2008-12-29 | Image sensor and method for manufacturing thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080135536A KR20100077566A (en) | 2008-12-29 | 2008-12-29 | Image sensor and method for manufacturing thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20100077566A true KR20100077566A (en) | 2010-07-08 |
Family
ID=42638898
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020080135536A KR20100077566A (en) | 2008-12-29 | 2008-12-29 | Image sensor and method for manufacturing thereof |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20100077566A (en) |
-
2008
- 2008-12-29 KR KR1020080135536A patent/KR20100077566A/en not_active Application Discontinuation
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