KR20100067916A - High-temperature adhesive tape for semiconductor package - Google Patents

Abstract

PURPOSE: A high-temperature adhesive tape for a semiconductor package is provided to increase the density and heat resistance of a film, to control the generation of foaming void, and to improve the reliability of the semiconductor package. CONSTITUTION: A high-temperature adhesive tape for a semiconductor package includes a one or more adhesive layers between a base film and a protective film. The adhesive layer is a high thermal resistant adhesive layer including polyisoimide. The polyisoimide is a precursor which is synthesized through a ring opening polymerization of an amine-containing diamine and dianhydride. The base film(1), the high thermal resistant adhesive layer(3), an insulating adhesive layer(4), and the protective film(5) are laminated on the adhesive tape(10).

Description

High Heat Adhesive Tape for Semiconductor Packaging {HIGH-TEMPERATURE ADHESIVE TAPE FOR SEMICONDUCTOR PACKAGE}

The present invention relates to a high heat resistant adhesive tape for semiconductor packaging, and more particularly, to a high heat resistant adhesive tape for semiconductor packaging comprising a high heat resistant adhesive layer comprising at least one layer of polyisoimide between a base film and a protective film. will be.

With the recent miniaturization and thinning of electromechanical devices and electronic devices (electronic devices), the establishment of better high-density packaging technology for semiconductor devices is required. The method using a lead frame conventionally used as a method of mounting a semiconductor device could not comply with such a demand for high density mounting. Accordingly, flip-chip mounting has been proposed as a method of mounting a semiconductor device having a size substantially the same as that of a semiconductor element. Flip chip mounting has recently attracted attention as a method for mounting a semiconductor element with a minimum area for miniaturization and high density of electronic devices. A bump is formed on the aluminum electrode of the semiconductor element used for this flip chip mounting, and the bump is electrically connected with wiring on a circuit board. Solder is mainly used as the composition of such bumps, which are formed on exposed aluminum terminals which are connected to the internal wiring of the chip by vapor deposition or plating. In addition, there are gold stud bumps and the like that are formed in the wiring joint apparatus.

When the semiconductor device connected by the flip chip is used as it is, the electrode of the connection part is exposed to air, and the difference in the color expansion coefficient between the chip and the substrate is large. There was a large stress on the surface, and there was a problem in the reliability of the mounting.

In order to solve this problem, in order to improve the reliability of the bonded portion after connecting the bump and the substrate, a method of fixing the semiconductor element and the substrate by filling a gap between the semiconductor element and the substrate with a resin paste or an adhesive film and curing them is adopted. It is.

In the above-described semiconductor mounting technology, a die attach film used for adhesion between a semiconductor device and a substrate or adhesion between a device and a device has been proposed, and a removable adhesive and adhesion for use from a dicing process to a die bonding process is proposed. Multilayer or single layer tapes having a tape function have been proposed. With the advent of a tape having the functions of an adhesive layer for dicing and an adhesive layer for fixing a chip, the process from dicing to packaging has been simplified and has become a commonly used technique.

Conventional die-bonding adhesive film layer is an adhesive film having heat resistance and moisture resistance and suppresses volatile matters generated, and an adhesive film for suppressing generation of volatile matters by applying epoxy and phenol having relatively high heat resistance has been introduced. Epoxy and phenolic compounds realize reliability and stability at temperatures of 100-120 ° C, the die bonding process conditions of die attach films for general multi-chip packaging. It is used as an insulating adhesive film composition for packages.

However, since the die-bonding conditions of the non-conductive film (NCF) for TSV packaging, which have been newly proposed recently, are 250 ° C. or more, epoxy and phenol compounds, which are adhesive compositions that have been stably used at existing process temperatures, are used. The thermal decomposition results in the release of low molecular weight materials such as methylene bisphenol, and these low molecular weight materials form effervescent voids in the semiconductor package in a gaseous state, which adversely affects semiconductor reliability such as breakage of bonded portions and damage to chips. .

In order to solve the problems of the prior art as described above, an object of the present invention is to provide a high heat-resistant adhesive tape for semiconductor packaging by increasing the heat resistance and coating density of the coating film to suppress the formation of foamed voids.

In addition, the present invention is for semiconductor packaging including a high heat-resistant adhesive layer having a degree of weight loss of 0.5% or less and a coefficient of thermal expansion (CTE) of 150㎛ / m ℃ or less in the temperature increase process of 25 ~ 350 ℃ It is an object to provide a high heat resistant adhesive tape.

In order to achieve the above object, the present invention is an adhesive tape for semiconductor packaging formed by including at least one adhesive layer between the base film and the protective film, at least one of the adhesive layer comprises a polyisoimide (polyisoimide) It provides an adhesive tape for semiconductor packaging, characterized in that the high heat-resistant adhesive layer.

The polyisoimide is preferably a precursor of polyimide synthesized by ring-opening polymerization of diamine and dianhydride containing an amine group.

Specifically, the adhesive tape for semiconductor packaging is preferably laminated in the order of a base film, a high heat-resistant adhesive layer containing polyisoimide, an insulating adhesive layer and a protective film.

In addition, the adhesive tape for semiconductor packaging is preferably laminated in the order of a base film, a photocurable adhesive layer, a high heat-resistant adhesive layer containing a polyisoimide, an insulating adhesive layer, a protective film.

In addition, the adhesive tape for semiconductor packaging is preferably laminated in the order of a base film, a photocurable adhesive layer, an insulating adhesive layer, a high heat-resistant adhesive layer containing a polyisoimide and a protective film.

The high heat-resistant adhesive tape for semiconductor packaging according to the present invention includes a high heat-resistant adhesive layer comprising at least one layer of polyisoimide between the base film and the protective film to increase the heat resistance and the film density of the coating film to suppress the formation of foamed voids. Can improve the reliability of the semiconductor package.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Prior to this, terms or words used in the specification and claims should not be construed as having a conventional or dictionary meaning, and the inventors should properly explain the concept of terms in order to best explain their own invention. Based on the principle that can be defined, it should be interpreted as meaning and concept corresponding to the technical idea of the present invention. Therefore, the embodiments described in the specification and the drawings shown in the drawings are only the most preferred embodiment of the present invention and do not represent all of the technical idea of the present invention, various modifications that can be replaced at the time of the present application It should be understood that there may be equivalents and variations.

The high heat resistant adhesive tape for semiconductor packaging of the present invention comprises at least one adhesive layer formed between the base film and the protective film, wherein at least one layer of the adhesive layer is polyisoimide (polyisoimide) It is characterized by being a high heat-resistant adhesive layer containing.

The polyisoimide is preferably a precursor of polyimide synthesized by ring-opening polymerization of diamine and dianhydride including an amine group.

The high heat-resistant adhesive layer containing the polyisoimide is excellent in heat resistance with a degree of weight loss of 0.5% or less generated in a temperature rising process of 25 to 350 ° C., resulting in almost no thermal decomposition product which is a cause of foamed voids. The thermal expansion coefficient of the coating film is lower than the maximum of 150㎛ / m ℃, and there is almost no flow of the coating film during the curing process, so that the micro-sized micro-bubble voids generated in the insulating adhesive layer merge into the macro size by the flow. By suppressing, the expression of a foamable void can be suppressed effectively.

The thickness of the high heat-resistant adhesive layer is preferably 1 to 5㎛.

The high heat-resistant adhesive tape for semiconductor packaging of the present invention comprising at least one or more layers of a high heat-resistant adhesive layer containing the above polyimide between the base film and the protective film is a high heat-resistant comprising a base film, polyisoimide Laminated in the order of an adhesive layer, an insulating adhesive layer and a protective film, or a base film, a photocurable adhesive layer, a high heat-resistant adhesive layer containing polyisoimide, an insulating adhesive layer and a protective film, or a base film, a photocurable adhesive layer, It may be laminated in the order of an insulating adhesive layer, a high heat resistant adhesive layer including a polyisoimide, and a protective film.

Hereinafter, one embodiment of a high heat resistant adhesive tape for a semiconductor package of the present invention will be described with reference to FIGS. 1 and 2.

1 is a cross-sectional view of a high heat resistant adhesive tape for a semiconductor package according to an embodiment of the present invention. As shown in FIG. 1, the high heat resistant adhesive tape 10 for a semiconductor package according to an embodiment of the present invention has a high heat resistance including a base film 1, a photocurable adhesive layer 2, and polyisoimide. It consists of an adhesive layer 3, an insulating adhesive layer 4 and a protective film 5.

The base film 1 constituting the high heat-resistant adhesive tape 10 for a semiconductor package of the present invention is not limited as long as it is a base film of a tape used in a back grinding process used in the art. . For example, a plastic film can be used, and among them, it is preferable to use a thermoplastic plastic film that can be expanded. When the wafer receives the physical impact generated during the backside grinding process, the wafer is cracked or broken and the circuit designed wafer is damaged. Therefore, it means that the base film should be a film capable of thermoplastic and expandable to protect the wafer because the film absorbs the physical impact caused by the grinding process to mitigate the impact.

In addition, it is preferable that the base film 1 should be expandable as well as UV-permeable. Particularly, since the photocurable adhesive layer 2 is an ultraviolet (UV) curable adhesive composition, the substrate film (1) can be cured with respect to ultraviolet rays having a wavelength that can be cured. It is preferable that it is a film excellent in permeability. Therefore, the base film 1 should not contain an ultraviolet absorber etc.

In addition, the base film 1 should be chemically stable. In the back grinding process, the physical impact is also great, but since the polishing is finally performed by the CMP slurry, the base film 1 in contact with it should be chemically stable.

Accordingly, the base film 1 is generally preferably in the form of a polymer, in particular a chemically stable polyolefin-based polymer. Specific examples that can be used as the base film (1), polyethylene, polypropylene, ethylene / propylene copolymer, polybutene-1, ethylene / vinyl acetate copolymer, a mixture of polyethylene / styrene butadiene rubber, polyvinyl chloride film Polyolefin type films, such as these, can be mainly used. In addition, plastics such as polyethylene terephthalate, polycarbonate, poly (methyl methacrylate), thermoplastic elastomers such as polyurethane, polyamide-polyol copolymer, and mixtures thereof can be used.

 The base film 1 may be mainly melted by blending polyolefin chips to form a film by extrusion, or may be formed by blowing. The heat resistance and mechanical properties of the formed film are determined according to the type of chips to be blended. In addition, the prepared base film 1 may be subjected to surface modification in order to increase the adhesive force with the photocurable adhesive layer (1) laminated on the base film (1).

As for the thickness of the said base film 1, 30-300 micrometers is preferable normally from a viewpoint of workability, ultraviolet permeability, etc. If the thickness is less than 30 μm, the film is easily deformed by the heat generated by UV irradiation, and the physical impact generated during backgrinding is not sufficiently alleviated. If the thickness exceeds 300 μm, the length of one roll of finished product is It is not long in terms of thickness, which is undesirable in terms of cost due to the increase in roll replacement time. In particular, the base film (1) is more preferably 50 ~ 200㎛ thickness in order to fill the wafer surface with bumps irregularities are formed.

The photocurable adhesive layer 2 constituting the high heat resistant adhesive tape 10 for a semiconductor package of the present invention is laminated on the base film 1.

The photocurable adhesive layer 2 is not particularly limited, but before ultraviolet irradiation, the high heat resistant adhesive layer 3, the insulating adhesive layer 4, and the wafer are strongly supported by a strong tack so as to shake or move during the backgrinding process. The wafer can be prevented from being damaged, and chemical substances such as CMP can be prevented from penetrating into the interface of each layer, and after UV irradiation, the adhesive layer increases the coating cohesion force due to the crosslinking reaction and shrinks to form a high heat-resistant adhesive layer on the top. (3) The adhesive force is significantly reduced at the interface with the photocurable adhesive layer 2 and the base film from the wafer to which the high heat-resistant adhesive layer 3 and the insulating adhesive layer 4 are attached by a reel-type adhesive tape. Any one can be used as long as 1) is easily peeled off.

Specifically, the photocurable adhesive layer 2 includes an adhesive binder, a thermosetting agent and a photoinitiator, and other additives may be included as necessary.

The pressure-sensitive adhesive may use an internal pressure-sensitive adhesive of a type such that a low molecular material having a carbon-carbon double bond in a polymer binder side chain, which is an adhesive component, behaves like a molecule by introducing a chemical reaction.

The pressure-sensitive adhesive binder preferably has a molecular weight of 100,000 to 1,000,000, by adding a low-molecular substance having a carbon-carbon double bond (for example, a low-molecular substance having an isocyanate group introduced into the terminal) in the copolymerized polymer binder side chain by a urethane reaction It can manufacture. As the adhesive resin applicable to the adhesive binder, various resins such as acrylic, polyester, urethane, silicone, and natural rubber may be used. However, in the present invention, the cohesive force is excellent and the heat resistance is excellent. An acrylic adhesive binder is used which is easy to introduce the substance.

The thermosetting agent may be used as long as the thermosetting agent can be cured by reacting with a functional group introduced into the side chain of the adhesive binder. Specifically, when the functional group introduced into the side chain of the adhesive binder is carboxyl type, it is preferable to use an epoxy curing agent, and if the functional group introduced into the side chain is hydroxyl type, it is preferable to use an isocyanate curing agent. In addition to this, a melamine-based curing agent or the like can be used, and an epoxy-based, isocyanate-based, melamine-based or the like can be used by mixing two or more components.

The thermosetting agent is preferably included in the photocurable adhesive layer 2 in an amount of 0.01 to 15 parts by weight based on 100 parts by weight of the adhesive binder. If the content is less than 0.01 parts by weight, the crosslinking reaction does not occur and adhesion to the base film may be poor, resulting in desorption of the coating layer after coating. ), The adhesion of the ring frame is deteriorated, so that the dicing die-bonding film and the wafer may be detached from the ring frame during expansion.

The photoinitiator can be used as long as the molecular chain is broken by ultraviolet light such as ketone-based or acetone-phenone-based to generate radicals. When the photoinitiator is added, the carbon-carbon double bond of the side chain of the adhesive binder in the photocurable adhesive layer 2 is crosslinked by radicals, and the glass transition temperature of the photocurable adhesive layer 2 is increased by the crosslinking reaction. The photocurable adhesive layer 2 loses a tack. When the tack is lost in this manner, a small force is required to peel off the high heat-resistant adhesive layer 3 on the upper side.

The photoinitiator is preferably contained in the photocurable pressure-sensitive adhesive layer 2, 0.01 to 3 parts by weight based on 100 parts by weight of the adhesive binder. When the content is less than 0.01 part by weight, the radical generation efficiency is lowered by ultraviolet irradiation, and thus, sufficient reduction in adhesion between the photocurable adhesive layer 2 and the high heat resistant adhesive layer 3 after the ultraviolet irradiation is not brought about. Thus, regardless of chip size, the desired pickup performance is not achieved. In addition, when the content of the photoinitiator exceeds 5 parts by weight, the UV irradiation efficiency does not increase any more, but the transition of the unreacted initiator to the high heat-resistant adhesive layer 3 occurs, thereby reducing the reliability in the packaging of the adhesive layer.

The photocurable pressure-sensitive adhesive layer 2 composed of the above components may further include components such as organic / inorganic fillers, curing accelerators, diluents and the like commonly used in the art, in addition to the above components.

The photocurable adhesive layer 2 as described above may be formed by directly coating on the base film 1, or after coating on a release film or the like and transferred by a transfer method after completion of drying. In addition, the coating method is not limited in any way as long as it can form a coating film such as bar coating, gravure coating, comma coating, reverse roll coating, applicator coating, spray coating.

The high heat resistant adhesive layer 3 including the polyisoimide constituting the high heat resistant adhesive tape 10 for a semiconductor package of the present invention is laminated on the photocurable adhesive layer 2. Since the high heat-resistant adhesive layer 3 is finally used as an adhesive for adhering the upper and lower sides of the chip, the high heat-resistant adhesive layer 3 should have physical properties to satisfy the reliability of the semiconductor packaging level, and at the same time, have good processability for packaging.

The high heat-resistant adhesive layer 3 does not generate foamy voids under the conditions of chip bonding (250 to 350 ° C.), and may be used as long as it satisfies the reliability of the semiconductor packaging level and maintains adhesion between the upper and lower chips. Do.

Specifically, the high heat-resistant adhesive layer 3 preferably comprises polyisoimide, which is a precursor of polyimide synthesized by ring-opening polymerization of diamine and dianhydride containing an amine group.

The high heat-resistant adhesive layer (3) containing the polyisoimide is a thermal decomposition product that is excellent in heat resistance with a degree of weight loss of 0.5% or less generated in a temperature rising process of 25 to 350 ° C. and is a cause of foamed voids. Hardly occurs, and the thermal expansion coefficient of the coating film is lower than the maximum 150 탆 / m ° C., so that there is little flow of the coating film during the curing process. Can be suppressed to effectively suppress the expression of effervescent voids. When the degree of weight loss exceeds 0.5%, macro-sized foamy voids are generated by the thermal decomposition products of the weight loss, and when the thermal expansion coefficient exceeds 150 μm / m ℃, the coating film during the curing process The flowability of the microporous microbubble voids flows and the macromolecular size merges to cause problems in reliability.

The coating method of the high heat-resistant adhesive layer 3 is not particularly limited as long as it can form a uniform coating thickness, the thickness is preferably 1 to 5㎛. If the coating thickness is less than 1㎛ does not exhibit a suitable adhesion between the upper and lower chips, if it exceeds 5㎛ may lower the storage modulus to less than 18MPa may cause problems in bump mounting (bump mounting).

The insulating adhesive layer 4 constituting the high heat resistant adhesive tape 10 for a semiconductor package of the present invention is laminated on the high heat resistant adhesive layer 4.

The insulating adhesive layer 4 is an adhesive layer which directly adheres to the wafer surface. In the case of a wafer-level processed stack package (WSP), the wafer surface having the bumpy surface having the bumpy surface having a large uneven surface must be laminated without voiding. Strong bond between the top and bottom of the chip. That is, since the insulating adhesive layer 4 is finally used as an adhesive for attaching the upper and lower sides of the chip, the insulating adhesive layer 4 must have physical properties to satisfy the reliability of the semiconductor packaging level, and at the same time, a wafer for unevenness during the mounting process, that is, the packaging process. The voids are filled without voids to prevent chipping or chip cracking during the dicing process and to avoid deterioration of reliability due to swelling after die attach. The insulating adhesive layer 4 is usually attached to the surface of the bump-forming wafer in which the circuit is designed at a temperature near 60 ° C.

The insulating adhesive layer 4 preferably has a storage modulus of 0.1 to 3 MPa at 60 ° C. If the storage modulus is less than 0.1 MPa, the fluidity is too large to cause a wheelet (Fillet), etc. of the adhesive layer to contaminate the peripheral device, if it exceeds 3 MPa, the adhesive layer bumps at the mounting temperature of 60 ℃ It is not good because it does not have the proper fluidity and viscosity to fill the cotton sufficiently.

The insulating adhesive layer 4 includes an acrylic resin as a binder, an epoxy resin as a curing unit, and a curing accelerator, and other additives may be included as necessary.

The acrylic resin as the binder is a thermoplastic resin having excellent film forming ability, and has a weight average molecular weight of 100,000 to 2,000,000 and a glass transition temperature (Tg) of -30 to 10 ° C. When the weight average molecular weight is less than 100,000, when the adhesive composition is coated on the base film, the coating film cohesion may be insufficient, and thus the film forming ability may be decreased. When the weight average molecular weight is over 2,000,000, the solvent solubility may be poor, such as coating.

As mentioned above, in order to satisfy the storage modulus at 60 ° C. of 0.1 to 3 MPa, the acrylic resin is included in an amount of 30 to 150 parts by weight based on 100 parts by weight of the remaining composition except for the acrylic resin, and has a glass transition temperature (Tg). It is preferable to use the thing of -30-10 degreeC. When the glass transition temperature of the acrylic resin is within the above range, it has fluidity capable of sufficiently filling the bump forming bend at the mounting temperature of 60 ° C., and the content is less than 30 parts by weight even for the acrylic resin having the glass transition temperature within the above range. There is a lack of an absolute amount of the binder due to the lack of film-forming ability to easily break the film-like adhesive is rolled into a roll shape, if it exceeds 150 parts by weight, the fluidity at a high temperature of 100 ℃ or more may be reduced when bubbles between chips.

The epoxy resin is not particularly limited as long as the epoxy resin is cured to exhibit adhesive strength, but in order to perform a curing reaction, the functional group must be 2 or more. Thus, bisphenol A type epoxy resin, phenol novolak type epoxy resin, cresol novolak type epoxy resin, and the like are used. It is good.

The curing accelerator acts as a curing agent for curing the epoxy resin, which is a curing unit, and curing accelerators such as imidazole, amine, and phenol may be used.

The insulating adhesive layer 4 composed of the above components may further include inorganic particles such as silica to improve dimensional stability and heat resistance. In addition, various silane coupling agents may be further added and used to increase adhesion with the wafer.

The coating method of the insulating adhesive layer 4 is not particularly limited as long as it can form a uniform coating thickness, the thickness is preferably 2 to 30 ㎛. If the coating thickness is less than 2 ㎛ does not exhibit a suitable adhesion between the top and bottom of the chip, if it exceeds 30 ㎛ is placed in the tendency of light and short semiconductor packaging is not advantageous to apply.

The protective film 5 constituting the high heat resistant adhesive tape 10 for a semiconductor package of the present invention is laminated on the insulating adhesive layer 4.

The protective film 5 may be used as long as it can protect the insulating adhesive layer 4 from external foreign matters or impacts, and is generally used as a traveling film for coating the outermost insulating adhesive layer 4. Mainly used.

In particular, during the semiconductor packaging process, the outermost protective film is removed to proceed with the process, so an easy-to-remove film is used. Specifically, in order to further provide a polyethylene terephthalate film or release property, the surface may be made of polydimethylsiloxane or a fluorine-based release agent. Modified ones can be used.

2 is a cross-sectional view of a high heat resistant adhesive tape for a semiconductor package according to another embodiment of the present invention. As shown in FIG. 2, the high heat resistant adhesive tape 10 for a semiconductor package according to another embodiment of the present invention has a high heat resistance including a base film 1, a photocurable adhesive layer 2, and polyisoimide. It consists of an adhesive layer 3, an insulating adhesive layer 4, a high heat resistant adhesive layer 3 'containing polyisoimide, and a protective film 5.

Since the contents of each of the high heat resistant adhesive tape 10 shown in FIG. 2 are the same as those described above, detailed description thereof will be omitted.

Hereinafter, the present invention will be described in more detail with reference to Preparation Examples and Examples. These examples are for illustrative purposes only and are not intended to limit the protection scope of the present invention.

Preparation Example 1 Preparation of Photocurable Adhesive Layer Composition

240 g of ethyl acetate and 120 g of toluene were first put into a 2 L four-neck flask, and a reflux cooler was installed on one side, a thermometer was installed on one side, and a dropping panel was installed on the other side. After raising the flask solution temperature to 60 ° C, a mixed solution of 51 g of methyl methacrylate, 54 g of butyl acrylate monomer, 285 g of 2-ethylhexyl acrylate, 180 g of 2-hydroxyethyl methacrylate, 30 g of acrylic acid, and 3.9 g of benzoyl peroxide was prepared. Then, the mixed solution was added dropwise at 60 ~ 70 ℃ for 3 hours using a dropping panel. After the dropping, the stirring speed was 250 rpm. After completion of the dropping, the reactants were aged at the same temperature for 3 hours. Then, 60 g of methoxypropyl acetate and 0.2 g of azobisisobutylonitrile were added thereto and maintained for 4 hours. Solids were measured and the reaction was stopped. The viscosity after polymerization was 10000 to 15000 cps, and the content of solids was corrected to 40%. 45 g of glycidyl methacrylate was added to the acrylic adhesive thus prepared and reacted at 50 ° C. for 1 hour to prepare an internal adhesive binder, and 2 g of a thermosetting agent AK-75 (100 g of the internal adhesive adhesive prepared) Aekyung Chemical) and 1 g photoinitiator IC-184 (Ciba-Geigy) were mixed to prepare a photocurable pressure-sensitive adhesive layer composition.

Preparation Example 2 Preparation of High Heat Resistance Adhesive Layer Composition

The polymerization apparatus was equipped with a mechanical stirrer at the center of the flask using a 1 L four-necked flask, and provided a nitrogen inlet, an outlet, and a sample inlet. First, 30 ml of 3,3'-diaminodiphenylsulfone (3,3'-DDS) is used as a solvent, 60 ml of N-methyl-2-pyrrolidone (NMP). After dissolving in, cooled in an ice water bath, 4,4'-hexafluoroisopropyridinebis (phthalic anhydride) (4,4'-hexafluoroisopropylidinebis (phthalic anhydride), 6FDA) 30 mmol was added and reacted at room temperature for 6 hours. 60 mmol of triethylamine (TEA) and 90 mmol of trifluoroacetic-anhydride (TFAA) as dehydrating agents were added to the reactant, followed by reaction for 4 hours, followed by isopropyl alcohol (isopropyl). alcohol). Then, to remove N-methyl-2-pyrrolidone, which is a high boiling point solvent, the purified isopropyl alcohol is centrifuged while exchanging several times to separate polyisoimide, followed by tetrahydrofuran as a solvent. tetrahydrofuran (THF) was dissolved in 15% by weight to prepare a high heat-resistant adhesive layer composition.

Preparation Example 3 Insulating Adhesive Layer Composition

Acrylic resin SG-70L (weight average molecular weight 900,000, glass transition temperature -13 ℃, Nagase Chemtech Co., Ltd.) 220g, epoxy resin YDCN-500-1P (molecular weight 10,000 or less, Kukdo Chemical Co., Ltd.) 110g, cresol novolac system After mixing 110 g of the curing agent MY721 (Huntsman), 1 g of 2P4MZ (Shikoku Chemical Co., Ltd.) with an imidazole series curing catalyst, 1 g of KBM-573 (Shin-Etsu Corp.) with an amino silane coupling agent, and 10 g of round silica filler PLV-6XS (Tatsumori), Primary dispersion was performed at 700 rpm for about 2 hours and then milled to prepare an insulating adhesive layer composition.

Example 1

First, the photocurable adhesive layer composition of Preparation Example 1 was coated on one side of a 38 micron PET release film (SRD-T38, Saehan Media) using an applicator, dried at 80 ° C. for 2 minutes, and then 100 micron PO (Polyolefin) Lamination was performed at 60 ° C. on the film, and then aged for 3 days in an oven at 40 ° C. to prepare a photocurable adhesive layer. Then, the high heat-resistant adhesive composition of Preparation Example 2 was coated on one side of a 38 micron PET release film (SRD-T38, Saehan media) using an applicator to a thickness of 5 microns and dried at 80 ℃ for 2 minutes 38 After lamination on a micron PET release film (SRD-T38, Saehan Media) at 80 ℃ 3 days at 25 ℃ room temperature to prepare a high heat-resistant adhesive layer. In the same manner, the insulating adhesive layer composition of Preparation Example 3 was coated on one side of a 38 micron PET release film (SRD-T38, Saehan Media) using an applicator to a thickness of 15 microns and dried at 80 ° C. for 2 minutes. After lamination on a 38 micron PET release film (SRD-T38, Saehan media) at a temperature of 80 ℃ was aged at 25 ℃ room temperature for 3 days to prepare a high heat-resistant adhesive layer. An adhesive film was prepared by laminating the photocurable adhesive layer, the high heat resistant adhesive layer, and the insulating adhesive layer sequentially using a laminator.

Example 2

As shown in Table 1 below, one more high heat-resistant adhesive layer was prepared as in the high heat-resistant adhesive layer of Example 1, and the photocured adhesive layer, the high heat-resistant adhesive layer, the insulation adhesive layer, and the high heat-resistant adhesive layer were manufactured by using a laminator. Laminating in order to prepare an adhesive film.

Comparative Example 1

Except that there is no high heat-resistant adhesive layer in Example 1 as shown in Table 1 by the same method as in Example 1 to laminate them to prepare an adhesive film.

After measuring the physical properties in the following manner using the adhesive film prepared in Example 1, Example 2 and Comparative Example 1, the results are shown in Table 2.

(1) foamable void

The adhesive films prepared in Example 1, Example 2 and Comparative Example 1 were laminated on a cover glass of 18 mm x 18 mm using a laminator, and then on a hot plate at 60 ° C. In the preheated state for 3 minutes, the cover glass of 18 mm x 18 mm was covered and laminated using a laminator so as not to generate bubbles. The final sample laminated with the upper and lower cover glasses was visually inspected for foamed voids at 300 ° C. In this case, it is represented by ○ when there is an expandable void, and by X when there is no expandable void.

(2) mounting voids, chippings, and chip cracks

The adhesive films prepared in Examples 1, 2 and Comparative Example 1 were thermocompressed at 60 ° C. on a surface of an 8 inch 80 μm wafer in which bumps were formed using Aaron's Mounter AR-08WM, followed by an optical microscope (Nikon). ME600L) was used to observe the void state of the surface. In addition, the mounted wafer is diced into a size of 10.0 mm x 10.0 mm using DFD-650 (Disco) to observe the chipping and chip cracks by observing the surface and cross section of 100 chips. At this time, if there is no void, chipping, chip crack, ○, if there is void, chipping, chip crack is represented by X.

(3) Thermal expansion coefficient (C.T.E)

The high heat-resistant adhesive layer of the adhesive films prepared in Examples 1, 2 and Comparative Example 1 to 200㎛ thickness, cut to 7mm × 14mm size using a TMA Q7200 (TA Instrument) -20 ~ 300 ℃ The thermal expansion coefficient was measured while increasing the heating rate to 5 ℃ / min.

(4) Adhesion layer-high heat-resistant adhesive layer 180 degree average peeling force measurement (before and after UV curing)

The 180-degree peel force of the pressure-sensitive adhesive layer-high heat resistant adhesive layer was measured according to the JIS Z 0237 standard. The adhesive films prepared in Examples 1, 2 and Comparative Example 1 were cut to 25mm × 150mm after UV irradiation. After peeling off the interface between the adhesive layer and the high heat-resistant adhesive layer of each cut film by using tweezers, the peeled part was placed on the upper and lower jigs in a 10N load cell using a tensile tester (Instron Series lX / s Automated materials Tester-3343). The load required for peeling was measured by peeling and peeling at a speed of 300 mm / min. UV irradiation was carried out using DS-MUV128-S1 (Daesung Engineering) in a high-pressure mercury lamp with a roughness of 70 W / cm for 3 seconds and the exposure dose was 300mJ / ㎠, and the average of 10 samples was measured before and after UV irradiation. .

(5) storage modulus

The insulating adhesive layer of the adhesive films prepared in Examples 1, 2 and Comparative Example 1 was made to have a thickness of 200㎛, cut into 7mm x 14mm size to -10 ~ 150 ℃ using DMA Q800 (TA Instrument) The elastic modulus was measured while increasing the temperature increase rate to 4 ℃ / min. At this time, the data of 60 ℃ was taken in this experiment.

(6) degree of weight loss (TGA)

Weighing 10 ~ 15mg of the high heat-resistant adhesive layer of the adhesive film prepared in Examples 1, 2 and Comparative Example 1 while increasing the temperature increase rate to 20 ℃ / min to 25 ~ 500 ℃ using TGA Q5000 (TA Instrument) The degree of weight loss was measured. In this experiment, data of 350 ° C was taken. At this time, the test conditions were that the pressure under nitrogen pressure (nitrogen flow rate (differentiated by nitrogen flow rate, not measured separately by a pressure gauge): 25 ml / min), and the humidity was almost zero at 150 ° C or higher.

As shown in Table 2, in Examples 1 and 2 according to the present invention, a high heat-resistant adhesive layer including polyisoimide is laminated so that the degree of weight loss is 0.5% or less at 350 ° C. It was also confirmed that the heat resistance and the coating film strength were excellent, and foamed voids did not occur. In addition, using an acrylic resin having a weight average molecular weight of 900,000 and a glass transition temperature of -13 ° C as a component of the insulating adhesive layer, it can be confirmed that mounting voids, chipping, and chip cracks do not occur at 60 ° C storage elastic modulus of 2.63 MPa. there was. In addition, the chip-to-chip shear strength during chip bonding according to Examples 1 and 2 was about 11 Kgf.

On the other hand, in the case of Comparative Example 1 without a high heat-resistant adhesive layer, mounting voids, chipping, chip cracks, etc. does not occur, but the weight loss is more than 5% at 350 ℃, the thermal expansion coefficient between 180 ~ 270 ℃ curing temperature Foamed voids were generated due to the lack of heat resistance of the insulating adhesive layer at a level of at least 300 μm / m ° C. or higher. Although the present invention has been described as the preferred embodiment mentioned above, it is possible to make various modifications or variations without departing from the spirit and scope of the invention. The appended claims also cover such modifications and variations as fall within the spirit of the invention.

1 is a cross-sectional view of a high heat resistant adhesive tape for a semiconductor package according to an embodiment of the present invention.

2 is a cross-sectional view of a high heat resistant adhesive tape for a semiconductor package according to another embodiment of the present invention.

Claims (14)

In the adhesive tape for semiconductor packaging formed by including at least one adhesive layer between the base film and the protective film, at least one of the adhesive layer is a semiconductor characterized in that the high heat-resistant adhesive layer containing polyisoimide (polyisoimide) Adhesive tape for packaging. The method of claim 1, Said polyisoimide is a precursor of polyimide synthesized by ring-opening polymerization of diamine and dianhydride containing an amine group, The adhesive tape for semiconductor packaging. The method of claim 1, The high heat-resistant adhesive layer has a thickness of 1 to 5㎛ adhesive packaging tape for semiconductor packaging. The method of claim 1, The adhesive tape is a base film, a high heat-resistant adhesive layer containing polyisoimide, an insulating adhesive layer and a protective film, the adhesive tape for a semiconductor packaging, characterized in that laminated in the order. The method of claim 1, The adhesive tape is an adhesive tape for semiconductor packaging, characterized in that laminated in the order of the base film, a photocurable adhesive layer, a high heat-resistant adhesive layer containing a polyisoimide, an insulating adhesive layer and a protective film. The method of claim 1, The adhesive tape is an adhesive tape for a semiconductor packaging, characterized in that laminated in the order of a base film, a photocurable adhesive layer, an insulating adhesive layer, a high heat-resistant adhesive layer comprising a polyisoimide and a protective film. The method according to any one of claims 4 to 6, The photocurable pressure-sensitive adhesive layer is a semiconductor packaging adhesive tape comprising 0.01 to 15 parts by weight of the thermosetting agent and 0.01 to 3 parts by weight of the photoinitiator, relative to 100 parts by weight of the adhesive binder. The method of claim 7, wherein The adhesive binder is an adhesive tape for semiconductor packaging, characterized in that at least one selected from acrylic resin, polyester resin, urethane resin, silicone resin and natural rubber. The method of claim 7, wherein The thermosetting agent is any one or more selected from an epoxy curing agent, an isocyanate curing agent and a melamine curing agent, and the photoinitiator is any one selected from ketone photoinitiator, acetone phenone photoinitiator and mixtures thereof. Heat resistant adhesive tape. The method according to any one of claims 4 to 6, The insulation adhesive layer comprises an acrylic resin, an epoxy resin and a curing accelerator, wherein the acrylic resin is 30 to 150 parts by weight based on 100 parts by weight of the remaining components except for the acrylic resin tape. The method of claim 10, The acrylic resin has a weight average molecular weight of 100,000 to 2,000,000, a high heat-resistant adhesive tape for semiconductor packaging, characterized in that the glass transition temperature is -30 to 10 ℃. The method of claim 10, The epoxy resin is a high heat resistance adhesive tape for semiconductor packaging, characterized in that any one or more selected from bisphenol A epoxy resin, phenol novolak-type epoxy resin and cresol novolak-type epoxy resin. The method of claim 10, The hardening accelerator is a high heat resistant adhesive tape for semiconductor packaging, characterized in that any one or more selected from imidazole-based curing accelerator, amine-based curing accelerator and phenolic curing accelerator. The method of claim 1, The adhesive tape is laminated in the order of a base film, a high heat resistant adhesive layer including polyisoimide, an insulating adhesive layer and a base film, The high heat-resistant adhesive layer has a degree of weight loss of 0.5% or less during the temperature increase process of 25 ~ 350 ℃, thermal expansion coefficient (C.T.E.) of 150㎛ / m ℃ or less adhesive tape for semiconductor packaging.

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