KR20100059436A - Anti-reflective composition and pattern forming method using the same - Google Patents

Anti-reflective composition and pattern forming method using the same Download PDF

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KR20100059436A
KR20100059436A KR1020080118207A KR20080118207A KR20100059436A KR 20100059436 A KR20100059436 A KR 20100059436A KR 1020080118207 A KR1020080118207 A KR 1020080118207A KR 20080118207 A KR20080118207 A KR 20080118207A KR 20100059436 A KR20100059436 A KR 20100059436A
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film
composition
polymer
formula
acid generator
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KR1020080118207A
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정재창
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주식회사 하이닉스반도체
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

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  • Spectroscopy & Molecular Physics (AREA)
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Abstract

PURPOSE: An antireflective composition, a method for forming a pattern of a semiconductor device, and the semiconductor device are provided to simultaneously develop an antireflective film and a photoresist film without a separate etching process for eliminating the antireflective film. CONSTITUTION: An antireflective composition includes a polymer having a repeat unit of a chemical formula 1, a polymer for absorbing light, an acid generator, a cross-linking agent, and an organic solvent. In the chemical formula 1, R_1 and R_2 are hydrogen or methyl and R_3 is alkylene of C1-C5. In the chemical formula 1, a and b are a polymerization ratio of the polymer. The polymer for absorbing light includes polyhydroxystyrene. The acid generator is a photoacid generator or a thermal acid generator.

Description

반사방지막 조성물 및 이를 이용한 패턴 형성방법 {Anti-reflective composition and pattern forming method using the same}Anti-reflective composition and pattern forming method using same {Anti-reflective composition and pattern forming method using the same}

본 발명은 반사방지막용 조성물 및 이를 이용한 패턴 형성방법에 관한 것으로, 더욱 상세하게는 포토레지스트 막의 현상 공정시 포토레지스트 막과 동시에 현상 가능하여 반사방지막을 제거하기 위한 별도의 식각 공정이 필요하지 않은 반사방지막용 조성물 및 이를 이용한 패턴 형성방법에 관한 것이다.The present invention relates to a composition for an antireflection film and a pattern forming method using the same. More particularly, the present invention can be developed at the same time as the photoresist film during the development process of the photoresist film so that a separate etching process for removing the antireflection film is not required. It relates to a composition for preventing film and a pattern forming method using the same.

초미세 패턴형성 공정에서는 포토레지스트 막의 하부막 층의 광학적 성질 및 레지스트 두께의 변동으로 인한 정현파 (standing wave) 및 반사 노칭 (reflective notching)과 하부막으로부터의 회절광 및 반사광에 의한 CD (Critical Dimension)의 변동이 불가피하게 일어난다. 따라서 노광원으로 사용하는 빛의 파장대에서 광흡수를 잘하는 물질을 도입하여 하부막 층에서의 반사를 막을 수 있는 반사방지막을 포토레지스트의 하부에 적층하여 미세가공 공정에 사용할 수 있다.In the ultra-fine pattern forming process, CD (Critical Dimension) by standing wave and reflective notching due to the optical properties of the lower layer of the photoresist layer and the variation of the resist thickness and diffraction and reflected light from the lower layer Fluctuations inevitably occur. Therefore, an anti-reflection film that can prevent reflection in the lower layer by introducing a material that absorbs light well in the wavelength range of light used as the exposure source can be used in the microfabrication process.

광원으로부터 빛을 받게 되면, 포토레지스트 막을 투과하여 포토레지스트 막의 하부에 들어온 빛이 산란 또는 반사되게 되는데, 유기 반사방지막은 산란 또는 반사되는 빛을 흡수하여 포토레지스트의 미세가공에 직접적으로 영향을 주게 된다.When light is received from the light source, light penetrating the photoresist film is scattered or reflected from the lower portion of the photoresist film. The organic antireflection film absorbs the scattered or reflected light and directly affects the microprocessing of the photoresist. .

한편, 반도체 리소그라피 공정이 미세화됨에 따라 선폭이 점차 감소되므로 포토레지스트 막의 두께가 얇아져야 패턴 무너짐 없이 패턴을 형성할 수 있다.On the other hand, as the semiconductor lithography process becomes finer, the line width gradually decreases, so that the thickness of the photoresist film may be reduced to form a pattern without collapsing the pattern.

이렇게 포토레지스트 막의 두께가 감소하다 보니 하부층인 반사방지막을 식각할 때 포토레지스트가 소모되면, 반사방지막 하부에 존재하는 피식각층을 식각할 때 포토레지스트 막이 충분한 식각 방지막으로 작용하기가 어렵다는 문제가 있다.As the thickness of the photoresist film decreases, when the photoresist is consumed when the anti-reflection film is etched, the photoresist film is difficult to function as a sufficient etch stop layer when etching the etched layer existing under the anti-reflection film.

도 1a 내지 도 1c는 종래의 반사방지막을 이용한 패턴 형성 과정을 나타낸 공정 단면도이다.1A to 1C are cross-sectional views illustrating a process of forming a pattern using a conventional antireflection film.

도 1a에 의하면, 피식각층 (11) 상부에 반사방지막 (13) 및 포토레지스트 막 (15)을 순차적으로 도포한다.Referring to FIG. 1A, an antireflection film 13 and a photoresist film 15 are sequentially applied on the etched layer 11.

도 1b에 의하면, 포토레지스트 막을 노광 및 현상하여 포토레지스트 패턴 (15')을 형성한다.1B, the photoresist film is exposed and developed to form a photoresist pattern 15 '.

도 1c에 의하면, 도 1b에서 형성된 포토레지스트 패턴 (15')을 식각 방지막으로 하여 하부의 반사방지막을 식각하여 반사방지막 패턴 (13')을 형성하게 된다. 그런데 이 식각 공정에 의해 포토레지스트 패턴이 소모되어 그 두께가 낮아지게 되어 (15"), 이렇게 두께가 낮아진 포토레지스트 패턴 (15")은 추후 피식각층 (11)을 식각할 때 식각 방지막으로서의 역할을 충분히 수행하지 못하게 된다는 문제가 있다.Referring to FIG. 1C, the anti-reflection film below is etched using the photoresist pattern 15 ′ formed in FIG. 1B as an etch stop layer to form the anti-reflection film pattern 13 ′. However, the photoresist pattern is consumed by the etching process and the thickness thereof is reduced (15 ″). Thus, the photoresist pattern 15 ″ having such a low thickness serves as an etch stop layer when etching the etching layer 11 later. There is a problem that it does not perform enough.

본 발명에서는 포토레지스트 막의 두께가 얇아지는 경우 발생하는 상기와 같은 문제점을 해결하기 위하여, 포토레지스트 패턴을 형성하기 위한 현상 공정시에 포토레지스트 막과 함께 현상됨으로써 반사방지막의 제거를 위한 별도의 식각 공정이 필요하지 않은 반사방지막 조성물 및 이를 이용한 패턴 형성방법을 제공하는 것을 목적으로 한다.In the present invention, in order to solve the above problems that occur when the thickness of the photoresist film becomes thin, the separate etching process for removing the anti-reflection film by developing with the photoresist film during the development process for forming the photoresist pattern An object of the present invention is to provide an antireflection film composition which is not necessary and a pattern forming method using the same.

상기 과제를 해결하기 위하여, 본 발명에서는In order to solve the above problems, in the present invention

하기 화학식 1의 반복단위를 포함하는 중합체, 광흡수용 중합체, 산 발생제, 가교제 및 유기용매를 포함하는 반사방지막용 조성물을 제공한다:It provides a composition for an anti-reflection film comprising a polymer, a light absorption polymer, an acid generator, a crosslinking agent, and an organic solvent comprising a repeating unit represented by Formula 1 below:

Figure 112008081617139-PAT00001
Figure 112008081617139-PAT00001

상기 화학식 1에서,In Chemical Formula 1,

R1 및 R2 는 각각 독립적으로 수소 또는 메틸이고,R 1 and R 2 are each independently hydrogen or methyl,

R3 은 C1~C5 의 알킬렌이며,R 3 is C 1 to C 5 alkylene,

a 및 b 는 중합체의 중합비로서, 그 비율 (a : b)은 중량비로 2~7 : 8~3 이다.a and b are polymerization ratios of a polymer, and the ratio (a: b) is 2-7: 8-3 by weight ratio.

상기 화학식 1의 반복단위는 하기 화학식 1a의 반복단위일 수 있다:The repeating unit of Formula 1 may be a repeating unit of Formula 1a:

Figure 112008081617139-PAT00002
Figure 112008081617139-PAT00002

상기 광흡수용 중합체는, 예컨대 노광원으로 ArF 광원을 사용할 경우에는 193nm 파장의 ArF 광원을 잘 흡수하기 위한 방향족 고리를 포함하는 중합체를 사용할 수 있으며, 본 발명에서는 폴리히드록시스티렌을 포함하는 것이 바람직하다.For example, when the ArF light source is used as an exposure source, the light absorbing polymer may use a polymer including an aromatic ring for well absorbing an ArF light source having a wavelength of 193 nm. In the present invention, it is preferable to include polyhydroxystyrene. Do.

상기 산 발생제는 광산 발생제 및 열산 발생제로 이루어진 군으로부터 선택되는 하나 이상의 것을 사용할 수 있다.The acid generator may be used at least one selected from the group consisting of photoacid generator and thermal acid generator.

상기 광산 발생제는 빛에 의해 산을 발생할 수 있는 화합물이라면 특별히 제한되지 않지만, 예를 들면 트리페닐술포늄 노나플레이트를 사용할 수 있고, 열산 발생제는 열에 의해 산을 발생할 수 있는 화합물이라면 특별히 제한되지 않지만, 예를 들면 2-히드록시시클로헥실 파라톨루엔설포네이트를 사용할 수 있다.The photoacid generator is not particularly limited as long as it is a compound capable of generating an acid by light. For example, triphenylsulfonium nona plate may be used, and the thermal acid generator is not particularly limited as long as it is a compound capable of generating acid by heat. However, for example, 2-hydroxycyclohexyl paratoluenesulfonate can be used.

상기 가교제는 -OH기와 가교 결합을 형성할 수 있는 것이라면 특별히 제한되지는 않지만, 멜라민을 사용할 수 있다.The crosslinking agent is not particularly limited as long as it can form a crosslinking bond with -OH group, but melamine may be used.

상기 유기용매는 특별히 제한되지는 않지만, 메틸 3-메톡시프로피오네이트 (MMP), 에틸 3-에톡시프로피오네이트 (EEP), 프로필렌글리콜 메틸에테르아세테이트 (PGMEA), 사이클로헥사논 또는 이들의 혼합물을 사용할 수 있다.The organic solvent is not particularly limited, but methyl 3-methoxypropionate (MMP), ethyl 3-ethoxypropionate (EEP), propylene glycol methyl ether acetate (PGMEA), cyclohexanone or mixtures thereof Can be used.

상기 조성물 내에, 화학식 1의 중합체 100 중량부에 대하여 광 흡수용 중합체 5~30 중량부 산 발생제 2~20 중량부, 가교제 2~20 중량부, 유기 용매는 1000~10000 중량부 포함될 수 있다.In the composition, 5 to 30 parts by weight of an acid generator, 2 to 20 parts by weight of acid generator, 2 to 20 parts by weight of crosslinking agent, and 1000 to 10000 parts by weight of an organic solvent may be included based on 100 parts by weight of the polymer of Formula 1.

본 발명에서는 또한,In the present invention,

상기 화학식 1의 반사방지막용 조성물을 피식각층 상부에 도포한 후 베이크 공정을 수행하여 반사방지막을 형성하는 단계;Forming an anti-reflection film by applying the composition for anti-reflection film of Chemical Formula 1 on the etched layer and then performing a baking process;

상기 반사방지막 상부에 포토레지스트 막을 형성하는 단계; 및Forming a photoresist film on the anti-reflection film; And

상기 포토레지스트 막에 노광 및 현상 공정을 수행하여 포토레지스트 막 및 반사방지막을 동시에 패터닝하는 단계를 포함하는 반도체 소자의 패턴 형성 방법을 제공한다.It provides a patterning method of a semiconductor device comprising performing the exposure and development process on the photoresist film and patterning the photoresist film and the anti-reflection film at the same time.

본 발명에서는 또한, 상기 패턴 형성방법을 이용하여 제조되는 반도체 소자를 제공한다.The present invention also provides a semiconductor device manufactured using the pattern forming method.

본 발명의 반사방지막 조성물에는 반사방지막 고유의 역할을 수행하기 위하여 광을 흡수하는 광 흡수용 중합체 이외에 화학식 1의 중합체가 필수적으로 포함된다. 이때 화학식 1의 중합체는 산에 의해 탈리되는 t-부틸기를 포함함으로써 노 광 공정시 포토레지스트를 투과한 빛이 반사방지막에 도달하면 발생하는 산에 의해 t-부틸기가 탈리된다. 이에 따라 현상 공정시 현상액인 알칼리 수용액에 용해되게 되므로 포토레지스트와 함께 반사방지막도 제거된다.The anti-reflective coating composition of the present invention essentially includes a polymer of the formula (1) in addition to the light absorbing polymer that absorbs light in order to perform a unique role of the anti-reflective coating. In this case, the polymer of Formula 1 includes a t-butyl group that is desorbed by the acid, so that the t-butyl group is desorbed by the acid generated when light transmitted through the photoresist reaches the antireflection film during the exposure process. As a result, the antireflection film is removed together with the photoresist because it is dissolved in the aqueous alkali solution during the development process.

본 발명의 반사방지막 조성물로 형성된 반사방지막은 포토레지스트 패턴 형성시 함께 패터닝되어, 포토레지스트 패턴 형성 후 반사방지막을 제거하기 위한 별도의 식각 공정이 필요하지 않다. 따라서, 식각 공정에 의한 포토레지스트의 소모에 따라 추후 식각 공정의 식각 방지막으로서의 역할 수행에 방해를 받았던 문제점을 해결할 수 있으며, 공정이 간단해진다는 부가적인 효과도 있다.The antireflection film formed of the antireflection film composition of the present invention is patterned together at the time of forming the photoresist pattern, so that a separate etching process for removing the antireflection film after the formation of the photoresist pattern is not necessary. Therefore, the problem of being obstructed in performing the role of the etch prevention layer in the etching process later by the consumption of the photoresist by the etching process can be solved, there is an additional effect that the process is simplified.

이하, 본 발명을 도면을 참고하여 더욱 구체적으로 설명한다.Hereinafter, the present invention will be described in more detail with reference to the drawings.

도 2a 및 도 2b는 본 발명의 반사방지막을 이용한 패턴 형성 과정을 나타낸 공정 단면도이다.2A and 2B are cross-sectional views illustrating a process of forming a pattern using an anti-reflection film according to the present invention.

도 2a에 의하면, 피식각층 (110) 상부에 반사방지막 (130) 및 포토레지스트 막 (150)을 순차적으로 도포한다.Referring to FIG. 2A, an antireflection film 130 and a photoresist film 150 are sequentially applied on the etched layer 110.

도 2b에 의하면, 포토레지스트 막을 노광 및 현상할 때 포토레지스트 막과 반사방지막이 동시에 패터닝되어 포토레지스트 패턴 (150')과 그 하부에 반사방지막 패턴 (130')이 동시에 형성된다.Referring to FIG. 2B, when the photoresist film is exposed and developed, the photoresist film and the antireflection film are simultaneously patterned to simultaneously form the photoresist pattern 150 ′ and the antireflection film pattern 130 ′ below.

즉, 본 발명에서는 종래 기술과 달리 반사방지막을 제거하기 위한 별도의 식각 공정이 필요하지 않게 된다.That is, in the present invention, unlike the prior art, a separate etching process for removing the anti-reflection film is not required.

이하 실시예를 들어 본원 발명을 더욱 상세히 설명하지만 본원 발명의 범위가 이에 한정되는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to Examples, but the scope of the present invention is not limited thereto.

제조예 1. 화학식 1a의 중합체의 합성Preparation Example 1 Synthesis of Polymer of Formula 1a

2-히드록시에틸 메타크릴레이트 64.57g, 2-메틸-2-아다만틸 메타크릴레이트 24.05g, AIBN 1.6g을 PGMEA 350g에 넣은 후 67℃에서 2시간 중합시켰다. 중합이 완료되면 용매 중에 흰색 분말 형태의 반응물이 석출되는데, 이를 필터 후 진공 건조하여 화학식 1a의 폴리(2-히드록시에틸 메타크릴레이트/2-메틸-2-아다만틸 메타크릴레이트)를 얻었다 (수율: 87%).64.57 g of 2-hydroxyethyl methacrylate, 24.05 g of 2-methyl-2-adamantyl methacrylate, and 1.6 g of AIBN were placed in 350 g of PGMEA, and then polymerized at 67 ° C. for 2 hours. When the polymerization was completed, a white powdery reactant was precipitated in a solvent, which was filtered and dried in vacuo to obtain poly (2-hydroxyethyl methacrylate / 2-methyl-2-adamantyl methacrylate) of formula 1a. (Yield 87%).

실시예 1. 반사방지막용 조성물의 제조Example 1. Preparation of antireflection film composition

상기 제조예 1에서 제조된 중합체 0.94g, 폴리히드록시스티렌 0.2g, 2-히드록시시클로헥실 파라톨루엔 술포네이트 0.1g, 멜라민 0.1g, 트리페닐렌술포늄 노나플레이트 0.03g을 36g의 PGMEA에 용해시킨 후 0.2㎛ 필터로 여과함으로써 파티클을 제거하여 반사방지막용 조성물을 얻었다.0.94 g of the polymer prepared in Preparation Example 1, 0.2 g of polyhydroxystyrene, 0.1 g of 2-hydroxycyclohexyl paratoluene sulfonate, 0.1 g of melamine, and 0.03 g of triphenylenesulfonium nonaplate were dissolved in 36 g of PGMEA. After that, particles were removed by filtration with a 0.2 μm filter to obtain an antireflective composition.

실시예 2. 패턴 형성Example 2. Pattern Formation

실리콘 웨이퍼 위에 상기 실시예 1에서 제조한 반사방지막을 코팅한 후 240℃에서 60초간 베이크하여 35nm 두께의 반사방지막을 형성하였다. 상기 반사방지막 위에 JSR (Japan Synthetic Rubber)사의 AR1221J ArF 감광제를 코팅한 후 110℃에서 90초간 베이크하여 200nm 두께의 포토레지스트 막을 형성하였다. 그런 다음 ArF 노광기를 이용하여 노광 후 다시 110℃에서 60초간 베이크한 후 2.38 중량% TMAH 수용액 현상액으로 현상한 결과 포토레지스트 막과 반사방지막이 동시에 현상된 패턴을 얻었다 (도 3 참조).The antireflection film prepared in Example 1 was coated on the silicon wafer, and then baked at 240 ° C. for 60 seconds to form an antireflection film having a thickness of 35 nm. After coating AR1221J ArF photoresist of JSR (Japan Synthetic Rubber) company on the anti-reflection film and baked for 90 seconds at 110 ℃ to form a photoresist film of 200nm thickness. Then, after exposure using an ArF exposure machine and baked again at 110 ° C. for 60 seconds, the resultant was developed with a 2.38 wt% TMAH aqueous solution developer to obtain a pattern in which a photoresist film and an antireflection film were simultaneously developed (see FIG. 3).

본 발명의 바람직한 실시예는 예시의 목적을 위한 것으로, 당업자라면 첨부된 특허청구범위의 기술적 사상과 범위를 통해 다양한 수정, 변경, 대체 및 부가가 가능할 것이며, 이러한 수정 변경 등은 이하의 특허청구범위에 속하는 것으로 보아야 할 것이다.Preferred embodiments of the present invention are for the purpose of illustration, and those skilled in the art will be able to make various modifications, changes, substitutions and additions through the spirit and scope of the appended claims, and such modifications may be made by the following claims. Should be seen as belonging to.

도 1a 내지 도 1c는 종래의 패턴 형성방법을 나타낸 공정 단면도이다.1A to 1C are cross-sectional views illustrating a conventional method for forming a pattern.

도 2a 및 도 2b는 본 발명에 의한 패턴 형성방법을 나타낸 공정 단면도이다.2A and 2B are cross-sectional views illustrating a method of forming a pattern according to the present invention.

도 3은 본 발명의 실시예에 의해 형성된 패턴의 단면 SEM 사진이다.3 is a cross-sectional SEM photograph of the pattern formed by the embodiment of the present invention.

<부호의 설명><Code description>

11, 110: 피식각층11, 110: etching layer

13, 130: 반사방지막13, 130: antireflection film

13', 130': 반사방지막 패턴13 ', 130': antireflective pattern

15, 150: 포토레지스트 막15, 150: photoresist film

15', 150': 포토레지스트 패턴15 ', 150': photoresist pattern

Claims (10)

하기 화학식 1의 반복단위를 포함하는 중합체, 광흡수용 중합체, 산 발생제, 가교제 및 유기용매를 포함하는 반사방지막용 조성물:A composition for antireflection film comprising a polymer, a light absorbing polymer, an acid generator, a crosslinking agent, and an organic solvent including a repeating unit represented by Formula 1 below: [화학식 1][Formula 1]
Figure 112008081617139-PAT00003
Figure 112008081617139-PAT00003
 상기 화학식 1에서,In Chemical Formula 1, R1 및 R2 는 각각 독립적으로 수소 또는 메틸이고,R 1 and R 2 are each independently hydrogen or methyl, R3 은 C1~C5 의 알킬렌이며,R 3 is C 1 to C 5 alkylene, a 및 b 는 중합체의 중합비로서, 그 비율 (a : b)은 중량비로 2~7 : 8~3 이다.a and b are polymerization ratios of a polymer, and the ratio (a: b) is 2-7: 8-3 by weight ratio. 청구항 1에 있어서,The method according to claim 1, 상기 화학식 1의 반복단위는 하기 화학식 1a의 반복단위인 것을 특징으로 하는 반사방지막용 조성물:The repeating unit of Formula 1 is a composition for anti-reflection film, characterized in that the repeating unit of the formula 1a: [화학식 1a][Formula 1a]
Figure 112008081617139-PAT00004
Figure 112008081617139-PAT00004
 청구항 1에 있어서,The method according to claim 1, 상기 광흡수용 중합체는 폴리히드록시스티렌을 포함하는 것을 특징으로 하는 반사방지막용 조성물.The light absorption polymer composition is an antireflection film, characterized in that it comprises a polyhydroxy styrene. 청구항 1에 있어서,The method according to claim 1, 상기 산 발생제는 광산 발생제 및 열산 발생제로 이루어진 군으로부터 선택되는 하나 이상인 것을 특징으로 하는 반사방지막용 조성물.The acid generator is an antireflection film composition, characterized in that at least one selected from the group consisting of photoacid generator and thermal acid generator. 청구항 1에 있어서,The method according to claim 1, 상기 광산 발생제는 트리페닐술포늄 노나플레이트를 포함하고, 열산 발생제는 2-히드록시시클로헥실 파라톨루엔설포네이트를 포함하는 것을 특징으로 하는 반사방지막용 조성물.The photoacid generator comprises a triphenylsulfonium nona plate, and the thermal acid generator comprises 2-hydroxycyclohexyl paratoluenesulfonate. 청구항 1에 있어서,The method according to claim 1, 상기 가교제는 멜라민을 포함하는 것을 특징으로 하는 반사방지막용 조성물.The crosslinking agent comprises a melamine composition for the antireflection film. 청구항 1에 있어서,The method according to claim 1, 상기 유기용매는 메틸 3-메톡시프로피오네이트 (MMP), 에틸 3-에톡시프로피오네이트 (EEP), 프로필렌글리콜 메틸에테르아세테이트 (PGMEA), 사이클로헥사논 및 이들의 조합으로부터 선택되는 어느 하나인 것을 특징으로 하는 반사방지막용 조성물.The organic solvent is any one selected from methyl 3-methoxypropionate (MMP), ethyl 3-ethoxypropionate (EEP), propylene glycol methyl ether acetate (PGMEA), cyclohexanone, and combinations thereof. Anti-reflective coating composition, characterized in that. 청구항 1에 있어서,The method according to claim 1, 화학식 1의 중합체 100 중량부에 대하여 광 흡수용 중합체 5~30 중량부 산 발생제 2~20 중량부, 가교제 2~20 중량부, 유기 용매는 1000~10000 중량부 포함되는 반사방지막용 조성물.5 to 30 parts by weight of an acid generator, 2 to 20 parts by weight of the acid generator, 2 to 20 parts by weight of the crosslinking agent, and 1000 to 10000 parts by weight of the organic solvent, based on 100 parts by weight of the polymer of the formula (1). 청구항 1의 반사방지막용 조성물을 피식각층 상부에 도포한 후 베이크 공정을 수행하여 반사방지막을 형성하는 단계;Forming an anti-reflection film by applying the composition for anti-reflection film on the etched layer and then performing a baking process; 상기 반사방지막 상부에 포토레지스트 막을 형성하는 단계; 및Forming a photoresist film on the anti-reflection film; And 상기 포토레지스트 막에 노광 및 현상 공정을 수행하여 포토레지스트 막 및 반사방지막을 동시에 패터닝하는 단계를 포함하는 반도체 소자의 패턴 형성 방법.And patterning the photoresist film and the anti-reflection film simultaneously by performing exposure and development processes on the photoresist film. 청구항 9의 패턴 형성방법을 이용하여 제조되는 반도체 소자.A semiconductor device manufactured using the pattern forming method of claim 9.
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