KR20100044760A - An improved method of removing arc, an arc remover, and an hybrid switch - Google Patents

An improved method of removing arc, an arc remover, and an hybrid switch Download PDF

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Publication number
KR20100044760A
KR20100044760A KR1020100030330A KR20100030330A KR20100044760A KR 20100044760 A KR20100044760 A KR 20100044760A KR 1020100030330 A KR1020100030330 A KR 1020100030330A KR 20100030330 A KR20100030330 A KR 20100030330A KR 20100044760 A KR20100044760 A KR 20100044760A
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South Korea
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semiconductor switch
arc
terminals
electrical signal
improved
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KR1020100030330A
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Korean (ko)
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허진
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허진
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Publication of KR20100044760A publication Critical patent/KR20100044760A/en
Priority to PCT/KR2011/001486 priority Critical patent/WO2011108874A2/en
Priority to KR1020110019259A priority patent/KR20110101076A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H47/00Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current
    • H01H47/22Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current for supplying energising current for relay coil
    • H01H47/32Energising current supplied by semiconductor device
    • H01H47/325Energising current supplied by semiconductor device by switching regulator
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H50/00Details of electromagnetic relays
    • H01H50/12Ventilating; Cooling; Heating

Abstract

An electrical parallel connection with a relay or a circuit breaker provides a method for removing an arc occurring between the contacts of the relay, an arc remover, and a hybrid switch including a method used for an arc remover.

Description

An improved method of removing arc, an arc remover, and an hybrid switch}

The present invention relates to the arc control technology of high voltage high current contact relays and breakers.

The present invention relates to relays, contactors (contact relays), semiconductor relays, circuit breakers. Relays normally open and close signals and power. Contactors are very large relays used to drive motors, heaters and light bulbs. Devices with a capacity of 15 A or more or thousands of watts or more are called contactors. Additional Options Except for additional low current contactors, they are made almost exclusively with normally open contactors. Unlike relays, contactors are designed with the ability to suppress and control the arcing that occurs when breaking large motor currents. An unavoidable arc upon blocking leads to oxidation of the contacts, which are made of silver alloys (AgSnO 2 , AgCdO 2 ). This is because the oxide of silver alloy is still a good conductor. The physical size of the contactor ranges from a small size that can be lifted with one hand to a large size that is approximately 1 meter laterally.

The high voltage contactor is surrounded by vacuum or an inert gas surrounding the contact electrodes to prevent oxidation of the contacts by the arc. The contacts carry the current from the contactor. This includes power contacts and a contact spring. The electromagnets provide the driving force for contacting the contacts. There is a cover surrounding the contacts and the electromagnet connection and the connections with the terminals and contacts for connection with the external system. The cover is made of Bakelite, Nylon 6, and thermosetting plastics to protect and insulate the contacts and to prevent people from touching them. Open cover contactors may have additional covers to protect against dust, oil, explosion hazards and climate.

Most motor control contactors operating at low voltages (below 600V) are air insulated contactors. Modern medium voltage motor controllers use vacuum contactors. Motor control contactors must match the fixtures for mounting them to make short circuit protection, heat exchange means, overload relays and combined starters

The physical phenomenon of the arc is described as follows. When charge accumulates on the surface of an object, an electric field is generated in the surrounding medium, which causes the Coulomb force to act on another object in the electric field, and when it reaches a limit, the medium reads electrical insulation and becomes conductive. When discharge occurs, electromagnetic radiation, sound, and light are generated accordingly. Discharge types include spark discharge, brush discharge, corona discharge, and propagating brush discharge. Spark discharges are discharges that convert very quickly the energy that has been charged by complete dielectric breakdown of the medium in a uniform electric field. Brush discharge A discharge in which a discharge occurs at a part exceeding the dielectric strength in part of an uneven electric field. Corona discharge is a type of brush discharge that is a weak discharge in which the local breakdown of the medium breaks down in a more severely uneven electric field. Propagating brush discharge occurs in a charge double layer consisting of positive and negative charges of several times the maximum surface charge density on both sides of a thin insulator such as a film. The dielectric strength of air is about 2.7 x 10 -2 C / m 2 in terms of surface charge density of about 2.7 kV / mm. Electrostatic discharge occurs when the charge density on the surface of the charge is about 10 −6 or more. That is, since the distance between the contacts is far from zero at the time of interruption, when the distance between the contacts is very close, a spark discharge occurs, and ions and particles of the electrode due to ionization of the medium pop out. For example, referring to FIG. 3, when the 400V battery power is turned off, the spark discharge occurs when the distance d of the contacts is within 2/15 mm (= d_spark). As a result, even when the distance between the contacts is increased, the local dielectric strength is low through ionization due to ionization in the medium, thereby maintaining the brush discharge form. Thus, as the distance between the contacts increases, the arc can be maintained in the form of a brush or corona discharge starting with a spark discharge.

Since the arc in the atmosphere is ionized (gas) in the ionized state at a high temperature, the arc control is finally reduced from the ionized state to the insulator by cooling. This removal of ions is called SOHO. At a voltage of 27V, discharge starts within 1/100 mm. As the separation distance between the electrodes increases, ions are quickly cooled and extinguished by the electrodes, making it difficult to generate an arc. However, in a contactor with a limit (~ mm) in the distance between the contacts, it is very difficult to extinguish it in the atmosphere if the current reaches more than a few hundred amps when the voltage is above 2.7kV. When the power source is a voltage source, as the current caused by the arc increases, the amount of ions generated by the arc increases and the arc contact resistance decreases, leading to further increase in current due to the arc, leading to breakage. Therefore, the control of the arc is important. On the other hand, arc extinguishing by direct current is more difficult than alternating current where current passes through zero. The arc extinguishing methods currently used for blocking include: cooling by using gas generated by the arc, expanding ions in a vacuum state, blowing ions in any direction, increasing internal pressure of the arc chamber, and arcing. There is a method of subdividing and using the arc driving force of the magnetic field. Both of these methods result in a reasonable increase in the recovery of the rapid dielectric strength between poles in the event of a break. In practice, the breaker or contact relay combines several methods to improve the breakdown performance.

In the sixties, a circuit breaker operated with insulating oil was used to control the arc at the time of breaking. In general, the surrounding insulating oil is decomposed by an arc generated when the current is interrupted to generate gases such as hydrogen, acetylene, methane, and ethane. 50-70% of the composition ratio of these gases is hydrogen, but the hydrogen gas is light and the thermal conductivity is very high even at a high temperature of about 4000 ° K.

Magnetic arcs use magnetic fields to lengthen arcs and use blown coils or permanent magnets to move arcs into arc chambers. The extinguishing chamber is made of an arc resistant insulating material such as zircon powder material, and the arc is cooled by ionic extinction to cut off the current. Current magnetic circuit breaker stacks a subplate of heat-resistant magnetic material with inverted V-shaped grooves in an appropriate number of sheets, installs a blowing coil and a magnetic pole, and flows an arc current to the blowing coil to create a magnetic field, which makes the magnetic field induced by the magnetic field and the arc. The arc is blown into the extinguishing chamber by (in this case, the arc is considered to be a current-carrying conductor and the Fleming's left-hand rule is applied to indicate the direction of motion of the arc). In the case of a magnetic circuit breaker, a high temperature arc reaches the surface of the arc board of the heat-resistant magnetic and becomes a cooling ion by thermal conduction. In order to effectively effect such cooling, the material of the arc board, the shape of the reverse V-shaped groove, the number of turns of the blowing coil, the installation position, etc. must be taken into consideration. On the other hand, by filling the high thermal conductivity of hydrogen, the cooling effect is further enhanced. The arc extinguishing principle of the arc chute is basically a cooling effect as described above, but another advantage related to arc extinguishing is the current-limiting wave effect of dividing one large arc into smaller arcs.

Vacuum circuit breaker is a circuit breaker that operates the circuit breaker in high vacuum. The insulation resistance in the high vacuum is very high and the extinguishing action by the diffusion of metal vapor or charge particles is outstanding. To block. When the pressure is gradually decreased from the atmospheric pressure, the dielectric strength decreases initially, but when the pressure is again applied, the dielectric strength increases. In a vacuum of 10 -3 Torr or less, the free stroke of electrons reaches several meters, so the generated arc is a neutral metal vapor atom, positive and negative charge, which starts from the cathode, not by electron collision. The high pressure arc vapor, which fills the core of the arc main in the vacuum valve, rapidly diffuses into the low pressure pipe wall of 10 -4 Torr or less. If the amount of neutral metal vapor atoms, cations and anions supplied from the cathode is less than the amount diffused in the vacuum during the opening and closing of the vacuum circuit breaker, the arc between the contacts cannot be maintained. The block is completed. If it is less than 10 -4 Torr, almost constant dielectric strength (100kV / mm when using tungsten electrodes) can be obtained regardless of pressure, and this vacuum area can be used to shorten the stroke of the contact of the vacuum circuit breaker to about 6-16mm.

The contact shape of the vacuum circuit breaker has been studied in various ways to facilitate the arc extinguishing. The oblique grooved structure of the contactor is to facilitate the arc extinguishing by bending the charge path. As a result, localized heating phenomenon of the contact surface is eliminated, and the surface consumption state becomes uniform. If the surface of the contactor is kept uniform, the withstand voltage characteristics between the poles can be improved and the distance between the contacts can be reduced.

For arc control using inert gas, SF 6 gas with intrinsic arc time constant of less than 1/100 of air due to its unique thermochemical and remarkable electrical characteristics is used because of its excellent insulation and extinguishing performance and excellent recovery characteristics. The extinguishing power is about 100 times that of air, so the SF 6 gas circuit breaker needs to supply as much fresh SF 6 gas molecules as possible to the generated plasma space, so that the arc is blown through the nozzle or electronically rotated to make the arc fresh. Guide to the gas molecule region.

SF 6 gas, which is currently applied to ultra-high voltage transmission and transmission equipment, is widely used as an insulating medium of ultra-high voltage equipment, but it is expensive, easily liquefied at low temperature and high pressure, and has a disadvantage of causing a greenhouse effect when released into the atmosphere. With the recent increase in environmental concerns and regulations, the Kyoto Protocol as a regulation on greenhouse gases has been officially entered into force, and SF 6 gas is highly likely to be regulated in the future due to total restrictions. Therefore, an insulating medium mixed with SF 6 gas and Air, N 2 , CO 2 , N 2 / O 2 syngas, He, etc. has been studied as an alternative.

Semiconductor contact relays are large-capacity semiconductor switches with heat sinks used to drive motors, heaters, and bulbs that often need to switch electrical connections. Since there is no moving part, there is no mechanical wear and no electrical contact vibration by vibration without sparks. Compared with a mechanical relay, when the semiconductor switch operates in saturation, the semiconductor contact relay causes a voltage drop of 1.5V or more. At this time, the power consumption generates heat corresponding to the product of the voltage drop value and the conduction current value. Therefore, an appropriate heat sink must be installed. Heat sinks, which require large heat sinks in proportion to the current capacity, do not allow small and light manufacturing of large capacity semiconductor contact relays. On the other hand, a conventional intelligent power semiconductor switch includes current sensor means for providing an electrical sensor signal proportional to the total current flowing through the semiconductor switch. The following is a summary of the advantages and disadvantages of semiconductor relays versus mechanical relays.

Advantages

1. Semiconductor relays are faster than electromechanical relays; Their switching time depends on the microsecond to millisecond time required to turn the LED on and off.

2. No moving parts, no wear

3. There is no side effect caused by vibration and it operates cleanly and without electric shaking.

4. When switching, there is no arc, so the electric noise is reduced.

5. Can be used in explosion environments where sparking should not occur when switching

6. Operates completely quietly

7. Can continue to operate under severe vibration

Disadvantages

1. When conducting, the voltage drop is bigger than that of the mechanical and electronic contact relay, which generates a lot of heat, requiring a large heat sink.

2. Shorter faults than electromechanical contact relays

3. Electrical noise increases when challenged

4. There is low resistance and reverse leakage current (level) during electrical disconnection.

5. There may be a malfunction due to a transient voltage.

6. Requires isolated semiconductor gate drive power supply

In summary, arc control is very important in the blocking of direct current, as opposed to the blocking of alternating current in which the current or voltage passes through zero in contact relays or contact breakers. Investigations have been made on the use of insulating oil, blown, blown with magnetic fields, the use of an arc-extinguishing chamber with an arc board, vacuum cut-off, and gas cut-off for arc control that hinders the breaking voltage and shortens its life. come. On the other hand, a semiconductor contact relay that does not generate an arc has a disadvantage in that a large heat sink and a large voltage drop are generated as compared with a mechanical and electronic contact relay. The previously filed technology (Korean Patent Application No. 10-2010-0020111) provides an arc eliminator and a method for eliminating arcs generated between the contacts of the relay by electrically connecting a relay or a circuit breaker and using the arc eliminator. A hybrid switch comprising the method described above. This patent application provides a method for making a small, light and high voltage and high current contact relay for an electric vehicle that can be used in an explosion environment due to no arcing, and a hybrid switch manufactured by the method. However, the conventional patent pending arc eliminator uses a pre-measured value as a method of detecting the time point at which the movable electrode is spaced apart from the fixed electrode when the relay is blocked. Therefore, the arc eliminator used for a particular relay must measure the electrical and physical characteristics of the relay before use to time the semiconductor switch on / off. This may result in deviations in the electrical and physical properties of the products even when mass-producing the same products, manufacturing cost increases if the on-off timing of the semiconductor switch to meet the characteristics during mass production.

Meanwhile, prior art B for a high speed arc extinction device and method by early shunting of arc current in plasma using a similar physical principle at the time of filing of a relay related application A (Korean Patent Application No. 10-2010-0020111) (International Application No. PCT / US2005 / 020276, International Publication No. WO 2006/014212, publication date 9 February 2006) have not been published. Therefore, the claim of the inventors that the application technology A and the prior art B have different patent components and effects, and that the related developers cannot easily devise the application technology A from the prior art B is as follows.

First, the power supply which is the main patent component of the prior art B is not a component of the application technology A. The power supply of Prior Art B should be designed to ignite the plasma and maintain the plasma without arcing. To this end, the power supply must be designed to be a current-following current source and be sufficiently in series with the output so that an arc does not occur and the current increases significantly when the output voltage decreases (because the resistance between the chamber internal electrodes decreases). It is essential to have a large inductance or to have a fast current programmed current controller. On the other hand, the power supply of the application technology A used as a component of the present invention is used only for supplying a relay movable electrode driving device and a semiconductor switch driving device. The power supply for applying a voltage to the fixed electrode and the movable electrode to the relay of the application technology A is not a current source, unlike the power supply of the prior art B. Extremely the power supply of prior art B and as another example an electric vehicle battery is a voltage source. The power supply of prior art B should be designed such that the output capacitor C1 is stored with a minimum of energy while proper filtering is provided. On the other hand, a power source that can be used with the application A should be designed to store the maximum energy. Thus, the capacitor, inductance, fast current programmed current controller, which is essential for the power supply implementation of Prior Art B, is not necessary as a component of the present invention.

Second, the plasma processing chamber, which is a component of the prior art B, is different from the component relay of the present invention. The plasma processing chamber, which is a component of the prior art B, must have a gas between the electrodes that promotes plasma generation between two electrodes spaced apart by a certain distance. On the other hand, the relay of Patent Application A does not need any gas to promote plasma generation between the two electrodes and should not be present. On the other hand, the output cable, which is a component of the prior art B, has an inductance, so that there is a resonance between the inductance of the output cable and the output capacitor C1. Because of this resonance, diode D1 is needed for normal operation. On the other hand, the conductor connecting the relay and the semiconductor switch, which is a component of the application technology A, is a pure conductor whose resistance, inductance, and capacitance values are all nearly zero. Therefore, the diode D1 series connection of the prior art B is not necessary for the normal operation of the application A. It is only desirable to connect the freewheel diode in parallel to the semiconductor switch in order to bypass the current caused by back electromotive force generated when blocking the current flowing to the inductive load. In the plasma processing chamber, which is a component of the prior art B, the two electrodes must be in contact or spaced apart for normal operation. On the other hand, the relay of the application technology A should be composed of a movable electrode and a fixed electrode for the normal operation, the movable electrode should be able to contact and spaced apart from the fixed electrode by the mobile electrode drive. The cause of arc generation in the chamber for plasma processing, which is a component of the prior art B, is due to unevenness of the electrode surface, unevenness of plasma concentration, and fluctuation of the voltage applied to the electrode. The voltage drops and the current rises. On the other hand, the reason for arc generation in the relay is that a voltage greater than the dielectric strength of air is always applied because the electrode spacing is small, and the occurrence of arc is predictable, and the voltage between the electrodes at the time of contact is proportional to the current flowing. The voltage rises and the current decreases. Therefore, the application technology A and the prior art B have different components.

On the other hand, the application technology A suppresses the generation of arcs that can occur between the mobile electrode and the fixed electrode to extend the life of the relay and makes it possible to use in an explosive gas environment. On the other hand, prior art B is for stably providing an arc-free plasma to the plasma processing chamber for plasma processing. Accordingly, the objects and effects of the application technology A and the prior art B are different from each other.

It will now be shown that one skilled in the art can not easily design the application A from the prior art B. The principles of arc generation differ between the application technology A and the prior art B (International Application No. PCT / US2005 / 020276, International Publication No. 9, 2006, Korean Application No. 10-2006-12-28). The principle of operation is completely different, including how to set the semiconductor switch operating time. First, a product having the same operating principle as the applied technology A for more than 48 months, even though the prior art B was published on February 9, 2006 as proof that the person skilled in the art cannot easily design the application technology A from the prior art B. Or no patent. Secondly, the application technology A is that the arc generation time is a function of the distance d between the moving electrode and the fixed electrode, and can actually predict the arc generation time. Therefore, the application technology A can be closed at the time when the distance between the movable electrode and the fixed electrode d_arc when contacting, and at the time when the distance between the movable electrode and the fixed electrode is d_arc when separated, eliminating the cause of arc generation before the occurrence of arc. have. On the other hand, in the prior art B, since the arc generation is caused by the instability of the power supply output voltage, the plasma concentration unevenness, and the electrode surface unevenness, the occurrence time of the arc is unpredictable. Therefore, in the prior art B, the semiconductor switch is closed at the time t2 at which the ring-out ends from the time of detecting the arc, and the semiconductor switch is opened at t3 before the current of the cable disappears to zero. In other words, the application technology A can be controlled so that the arc does not occur at all, while the prior art B is unpredictable, it can prevent the generated arc from proceeding to a more serious state. After all, since the arc generation time can be predicted, the principle of the application technology A for determining the time when the semiconductor switch on / off depending on the relay on / off time; Although the patent document (PCT / US2005 / 020276) cannot predict the time of occurrence, the principles of prior art B, which determine when to turn the semiconductor switch on / off based on the time of detecting the arc, are very different from each other and the operating principle of the applied technology A The expert cannot easily devise because it is not simple.

On the other hand, the prior art related to arc detection is well summarized in the prior art B (PCT / US1996 / 05404).

It is an object of the present invention to provide a method capable of making a small and light contact high voltage and high current contact relay for an electric vehicle that can be used in an explosion environment due to no arc, and a relay manufactured by the method. Provided is an improved arc eliminator and hybrid switch which operates by detecting a semiconductor switch on / off time automatically regardless of the electrical and physical characteristic deviations of products that may exist in mass production of the arc eliminator and hybrid switch according to the present invention. Is in.

The construction principle of the arc eliminator according to the present invention will be described with reference to FIG. 1. The arc eliminator according to the invention comprises two terminals (10, 20) for facilitating electrical connection between the external system and the invention; Terminals 51 and 52 to which an electrical signal for opening and closing an electrical connection between two terminals 10 and 20 is connected; A semiconductor switch 30 electrically connected to the two terminals 10 and 20 and capable of being electrically opened and closed through terminals 52 and 53 in dependence on the electrical signal; The semiconductor switch driver 50 electrically closes the semiconductor switch 30 at a specific time Ton from the time point at which the electrical signal changes, depending on the electrical signal, and electrically opens the semiconductor switch 30 at a specific time Toff depending on the electrical signal. )Wow; A frame for preventing the damage caused by the heat of the semiconductor switch 30, respectively, and mechanically arranges and connects the contact elements (10, 20, 30, 50, 51, 52, 53, 54) and the contact relay And 60. The semiconductor switch 30 may be implemented as a bipolar transistor, an insulated gate bipolar transistor (IGBT), or a field effect transistor (FET). The semiconductor switch driving device 50 includes terminals 51 and 52 to which an electrical signal for opening and closing an electrical connection between two terminals 10 and 20 is connected; Terminals 53 and 54 for driving a semiconductor switch are provided.

Referring now to the operation principle of the present invention shown in Figure 2 as follows. First, an initial state in which the semiconductor switch 30 is electrically open, is spaced apart by an arc-free distance between the fixed electrode 70 and the moving electrode 80, and a voltage is applied between the terminals 10 and 20. Consider a process of approaching the moving electrode 80 in the direction of the fixed electrode (70). When the contact type relay driving device 90 operates in response to the electrical switching signals applied to the terminals 51 and 52 in the initial state and converts the contact relay from the spaced state into the contact state, the fixed electrode 70 is based on the electrical switching signal. Let T_spark be the time at which the arc starts to occur between the c) and the moving electrode 80. In this case, a distance between the fixed electrode 70 and the moving electrode 80 is referred to as d_spark with reference to FIG. 3. Here, d_spark depends on the voltage between the terminals 10 and 20 and the shapes of the fixed electrode 70 and the moving electrode 80. The shape of the fixed electrode 70 and the moving electrode 80 is divided into two planes. Suppose there is a relationship of d_spark = voltage (V) /2.7 (kV / mm) in air. For example, if the voltage between the terminals 10, 20 in the electrically open state is 400 V, the value of d_spark is about 2/15 mm. T_spark depends on the driving method of the contact relay driving device 90, and can be obtained experimentally. On the other hand, when time comes into contact, the arc generated at time T_spark disappears.

Referring now to FIGS. 3 and 4, the operation principle of generating no arc at all in the embodiment of the present invention illustrated in FIG. 2 is as follows. In the initial state, the contact type relay driving device 90 operates according to the electrical switching signals applied to the terminals 51 and 52 to move the movable electrode 80 in the initial spaced state to move with the fixed electrode 70. Consider the semiconductor switch driver 60 that changes the semiconductor switch 30 from the electrically open state to the closed state when the separation distance d of the electrode 80 is d_spark. Since the operation speed of the semiconductor switch 30 is very fast, a voltage is conducted between the terminals 10 and 20 at the separation distance d (= d_spark) between the fixed electrode 70 and the moving electrode 80 while the semiconductor is saturated. The voltage is about 1.5 ~ 4V and no arc occurs. In a relay driven by an electromagnet type, the time (T_contact-T_spark) from T_spark to a contact state is very short (1 ms or less). Therefore, even if the semiconductor switch 30 operates in a saturated state during this time, the total amount of heat generated is very small. On the other hand, deterioration of the contacts can be neglected during the time from T_spark to the contact state unless it is driving a load with a very large capacitance. Therefore, it is desirable to sufficiently delay the time of turning on the semiconductor switch in consideration of the deviation of the electrical and mechanical properties of the relay.

When the semiconductor switch 30 is closed in the contact state, the voltage V is between the terminals 10 and 20 and the current A flowing through the contact resistance Ω of the fixed electrode 70 and the moving electrode 80. Is not greater than the product of. Thus, if the contact resistance of the contacts is small enough, most of the current will flow through the contact without passing through the semiconductor switch 30. For example, if the contact resistance is 1 mΩ and the current flowing through the contact is 200 A, the voltage between the terminals 10 and 20 will be 0.2 V, and the closed semiconductor switch 30 has almost no current, so the semiconductor switch ( At 30), little heat is generated.

Now, the contact relay driving device 90 operates in response to the electrical switching signals applied to the terminals 51 and 52 in the contact state and the semiconductor switch 30 is closed to convert from the contact state to the spaced state. Consider a process in which the semiconductor switch driving device 60 operates. When measured from the time point T_move at which the moving electrode 80 starts to move, it is assumed that the distance d between the fixed electrode 70 and the moving electrode 80 becomes d_spark. Consider a semiconductor switch driving device 60 that changes the semiconductor switch 30 from an electrically closed state to an open state at time T_off (= T_move + T_open). Before the time T_move when the moving electrode 80 starts to move, the voltage between the terminals 10 and 20 is the product of the contact resistance and the current flowing through the contacts 70 and 80 and the contact resistance is 1 mΩ. If the current is 200A, it is 0.2V. After the T_move time point when the moving electrode 80 starts to move while the semiconductor switch 30 is in the on state, the current flowing through the semiconductor switch 30 increases rapidly. At this time, when the semiconductor switch 30 operates in a saturated state, the voltage between the terminals 10 and 20 corresponds to 1.5 to 4V according to the characteristics of the semiconductor switch. At this time, if too much current flows in the semiconductor switch 30 such that the semiconductor switch 30 cannot operate in a saturated state, the voltage between the terminals 10 and 20 rises. Therefore, when the voltage depending on the current flowing in the semiconductor switch 30 is detected, the time corresponding to the contact state, the space start time T_move, and the overcurrent time point can be automatically detected. Many commercially available semiconductor switches have a real-time control function capable of controlling the current flowing through the semiconductor switch in real time. In this case, if a current signal that is also dependent on the current is detected, it is possible to automatically detect the time corresponding to the contact state, the separation start time T_move, and the overcurrent time point.

Even when the distance d between the fixed electrode 70 and the moving electrode 80 is small (d <d_spark), the voltage V between the terminals 10 and 20 is about 1.5, which is a voltage that conducts the semiconductor in a saturated state. It becomes ~ 4V and no arc occurs. When the semiconductor switch 30 is opened, since the separation distance d (> d_spark) between the fixed electrode 70 and the moving electrode 80 is sufficiently large, spark discharge does not occur between the contacts and thus no arc is generated. . This is in contrast to conventional arc phenomena where a brush arc or corona discharge continues even when the separation distance d (> d_spark) is sufficiently large because the ions generated by the spark discharge generated when the electrode arc is small in the electrode gap are sufficiently large. to be. At this time, since the current mainly flows through the contacts having a small contact resistance before T_move, since the semiconductor switch 30 operates in a saturation state only during T_open, heat is generated, but the time is very short and the total amount of heat is very small.

In FIG. 4, the voltages between the contacts are conceptually illustrated with respect to time, taking a power supply voltage of 400V, a load resistance of 2Ω, a contact resistance of 1mΩ, and a maximum distance of 1 mm between the fixed electrode and the moving electrode. Referring to Fig. 4, the first time chart conceptually illustrates the voltage between the contacts of a conventional relay. The voltage decreases from the time t_spark when the separation distance d is d_spark, and the voltage is instantaneously 0.2V at t_contact. The moving electrode is bounced by the fixed electrode to oscillate between a voltage of 0.2 V and a high voltage which is not defined by the arc. When an arc is generated by a spark, the voltage between the contacts becomes a partial pressure of the contact resistance and the load resistance by the arc. Contact resistance due to arc depends on the situation. It can be seen from the first time diagram of FIG. 4 that the arc generated by the spark that occurs at the time T_move at which the mobile electrodes are spaced may continue to exist even when the mobile electrodes are completely spaced apart. Referring to Figure 4, the second to third time plots show the voltage (Vce, second time plot) between the contacts, when the improved arc eliminator according to the invention is used to eliminate arcing on contact and on interruption. The semiconductor switch 30 shows the gate voltage Vge (third time chart). When the semiconductor switch is turned on at T_spark, no spark occurs even if the distance d between the contacts is smaller than d_spark. On the other hand, even when the moving electrode is spaced apart in T_move at the time of blocking, the spark does not occur because the voltage between the contacts does not exceed Vce of the semiconductor switch 30 in saturation operation. Even after the semiconductor switch 30 is opened after T_open, the distance d between the contacts is larger than d_spark, and thus no spark occurs.

Now, the operation principle of the present invention that allows only arc discharge for a very short time will be described with reference to FIG. A voltage is applied between the terminals 10 and 20, the semiconductor switch 30 is electrically open, and the fixed electrode 70 and the moving electrode 80 move with the fixed electrode 70 in an initial state in contact. Consider a process of separating the electrodes 80. In accordance with the electrical signal applied to the terminals 51 and 52 in the initial contact state, the contact relay driving device 90 is operated to switch from the contact state to the spaced state. At this time, when the mobile electrode 80 starts to move based on the electrical signal, the spark discharge starts. Even though the separation distance d between the fixed electrode 70 and the moving electrode 80 is sufficiently larger than d_spark, since the charged particles made by the spark discharge exist, a region having a low dielectric strength exists and the brush discharge may be maintained. Here, consider a case where the electrically open semiconductor switch 30 is closed and opened for a short time, T_close. From the time when the open / close signal becomes 1 to 0, the semiconductor switch 30 is kept open from the time T_move + T_open, and after the time T_move + T_open, the semiconductor switch (T_move + T_open + T_close) before the time (T_move + T_open + T_close). Consider a semiconductor switch driving device 50 that keeps 50 closed and maintains its open state after the time T_move + T_open + T_close. When the semiconductor switch 30 is closed, the voltage between the terminals 10 and 20 drops to about 3 V of the semiconductor saturation voltage, so that the arc between the fixed electrode 70 and the moving electrode 80 disappears and the dielectric strength by air Is recovered. When the semiconductor switch 30 is opened again, the terminals 10 and 20 are electrically opened. Here, T_close is closely related to the time at which the plasma is killed. During T_close, a large amount of heat is generated because a large amount of current flows in the semiconductor switch 30, but T_close is very short, about 20 microseconds, so the total amount of heat is very small.

In both the operating principle of the present invention that does not generate an arc and the operating principle of the present invention that allows only arc discharge for a very short time, the time from T_spark to contact, and T_open and T_close are all very short and are assumed to be approximately 1 ms for 1 second. It is about 1/1000 of the calorific value at the time of saturation conduction. The thermal resistance of the junction and the semiconductor switch case in a commercial IBGT switch is shown in FIG. 5. Referring to FIG. 5, the thermal resistance of 1 ms single pulse is 10 times smaller than that of DC, and the thermal resistance of 20us single pulse is 125 times smaller than that of DC. Since the temperature is increased by a single pulse and then cooled, it is possible to manufacture a relay without generating an arc without a heat sink if the case temperature of the semiconductor switch 30 does not exceed 125 ° C. For example, a commercial IBGT semiconductor switch has a Vce of about 3 V at a current of 300 A, but a case temperature rise of the semiconductor switch 30 is about 42 o C and 10 o C, respectively, when the pulse width is 1 ms and 20 us. In other words, since the temperature of the junction rises and decreases momentarily, it does not require a heat sink even when operating at 80 ° C. Normally 20 us is enough for T_close, the difference between T_contact and T_spark is within 1ms, and T_open is also within 1ms.

6 is an embodiment of a hybrid switch utilizing the principle of arc eliminator. The principle of operation is the same as that of the arc eliminator illustrated in FIG. 2.

There is a need to provide an improved arc eliminator and hybrid switch that automatically detects and operates the semiconductor switch on / off timing, regardless of the electrical and physical characteristic variations of products that may exist in mass production of the arc eliminator and hybrid switch. . In order to implement such a technique, it is necessary to accurately detect the time point (T_move + T_open). Referring to Figure 7 the principle and operation of the improved arc eliminator designed for this purpose are as follows. The semiconductor switch drive device 50 of the improved arc eliminator comprises terminals 51 and 52 to which an electrical signal is connected for opening and closing an electrical connection between two terminals 10 and 20; Terminals 53 and 54 for driving a semiconductor switch; A terminal 55 for measuring the voltage is provided. The semiconductor switch driving device 50 senses a voltage through the terminal 55. The voltage measured through terminal 55 is 0.5V (> 0.2V, supply voltage 400V, load resistance 2Ω, contact resistance 1mΩ) depending on the electrical signal to open and close the electrical connection between terminals 10 and 20. If the time at which the abnormality is set as T_move and the semiconductor switch 30 is turned off after T_open on the basis of T_move does not generate an arc. This has the advantage of automatically detecting T_move for various relays. In addition, if the voltage between the terminals 10 and 20 is sufficiently higher than the voltage during the saturation operation of the semiconductor switch 30, the semiconductor switch 30 is turned off within a few microseconds so that the semiconductor switch 30 is broken. Can be prevented.

8 is an improved hybrid switch according to the present invention, characterized in that it comprises a freewheel diode 31 to prevent breakage of the semiconductor switch 30 by back electromotive force which may occur when a current is cut off when driving an inductive load. The conceptual diagram of configuration. Referring to FIG. 8, the hybrid switch according to the present invention includes two power terminals 10 and 20 for facilitating electrical connection between an external system and the present invention; Opening and closing signal terminals 51 and 52 to which an electrical opening and closing signal for opening and closing an electrical connection between two power terminals 10 and 20 is connected; A semiconductor switch 30 electrically connected to the two terminals 10 and 20 and capable of being electrically opened and closed through terminals 52 and 53 in dependence on the electrical signal; The semiconductor switch 30 is electrically closed at a specific time Ton from the time point at which the electrical signal changes, depending on the electrical signal, and the semiconductor switch at a specific time Toff depending on the voltage measured through the terminal 55 in dependence on the electrical signal. A semiconductor switch driver 50 which electrically opens 30; A fixed electrode 70 connected to the terminal 10 by a conductor and fixed thereto; A movable electrode 80 connected to the terminal 20 by a conductor and movable; The movable electrode 80 is moved in response to the electrical opening / closing signal to convert the fixed electrode 70 and the movable electrode 80 into a contact state in a spaced apart state, and in the contact state, the movable electrode 80 is moved to fix the fixed electrode ( A contact relay driving device 90 for converting the 70 and the moving electrode 80 into a spaced state; It prevents each damage caused by the heat generation of the semiconductor switch 30, and the components 10, 20, 30, 31, 50, 51, 52, 53, 54, 55, 70, 80, 90 It characterized in that it comprises a frame 60 that is arranged to connect. The principle of operation is that of all components except the freewheel diode 31 is the same as in the preferred embodiment of the improved hybrid switch of FIG. 6. Due to the counter electromotive force that may occur when blocking the current flowing in the inductive load, the current flows from the terminal 20 to the terminal 10 through the freewheel diode 31 to suppress the voltage increase of the terminal 20. The freewheel diode 31 operates only when counter electromotive force is generated without disturbing the operation of other components.

The semiconductor switch 30 may be composed of a bipolar transistor, an insulated gate bipolar transistor, or a field effect transistor. Insulated gate bipolar transistors, which are typically suitable for high Vce voltages and fast operation, are advantageous due to the characteristics of arc eliminators. Commercially available single chips with the following known protection functions are available on the market to prevent breakage of the insulated gate bipolar transistors. First, there is a desaturation operation prevention function that protects the semiconductor switch 30 by opening the semiconductor switch 30 when the value of Vce is greater than or equal to the preset Vce value. Second, when the power supply voltage of the semiconductor switch driver 50 is not high enough to apply sufficient voltage between the terminals 53 and 54, a low power supply voltage lock (UVLO) that prevents the semiconductor switch 30 from driving. There is a function. Third, when the semiconductor switch is turned off too quickly, there is a slow off function which eliminates the possibility of damaging the semiconductor switch by back electromotive force due to the floating load. Fourth, there is a gate voltage suppression function that prevents the gate voltage from rising above a certain level to prevent dielectric breakdown of the gate. Fifth, there is a gate emitter voltage suppression function to prevent semiconductor switch damage due to the gate emitter voltage rise.

On the other hand, in the overcurrent or short-circuit current detection method by Vce detection, the current flowing through the Vce and the semiconductor switch may not be proportional when the inductive load or the capacitive load is driven. Therefore, a semiconductor switch having a real-time control function for real-time measurement and control of the current flowing through the semiconductor switch and a temperature detection function for stopping operation upon overheating can be obtained commercially. 9 is a conceptual diagram illustrating an improved arc eliminator comprising a semiconductor switch 30 having a current sensor terminal for outputting a voltage proportional to a current flowing in the semiconductor switch. The usage and principle of operation of an improved arc eliminator comprising: a semiconductor switch 30 having a current sensor terminal for outputting a voltage proportional to the current flowing in the semiconductor switch. Connect terminal 55 of the improved arc eliminator to the semiconductor switch current sensor terminal. The operating principle of the terminal 55 in FIG. 9 is the same as the operating principle in FIG.

Electrically parallel connection of the improved arc eliminator according to the invention with the contact relay completely eliminates the arc occurring between the contacts of the relay, making it usable in explosive gas environments, making it possible to use in harsh vibration environments, and Increases the electrical life of the. Blocking with minimal arcing permits high current interruption without a heat sink. On the other hand, the improved hybrid switch according to the present invention provides a power switch small and light by allowing no arcing or only minimal arcing without a large heat sink.

1 is a conceptual diagram of an improved arc eliminator
2. Preferred Embodiment of the Improved Arc Eliminator
Figure 3. Distance between the sparks
4. Time chart to explain the arc elimination principle
Figure 5. Thermal resistance versus pulse width of a commercial semiconductor switch
6 is a conceptual diagram of an improved hybrid switch
7 is an exemplary conceptual diagram of an improved hybrid switch.
8. Improved hybrid switch including diode for preventing semiconductor switch breakage by back EMF
9. Improved arc eliminator including semiconductor switch with real time control

T_spark, T_move, T_open, and T_close all depend on the shape of the contacts and the driving method of the moving contact.However, since the relay has an operating frequency of 8 ms or less, the time from T_spark to the contact (~ 0.35ms), T_move (automatically) Detection), T_open (~ 0.35ms), T_close (~ 20us) values and the present invention operates.

10, 20 ~ 2 power terminals to facilitate electrical connection with an external system and the present invention
A semiconductor switch that is connected to 30 to two terminals 10 and 20 by a conductor and that can be electrically opened and closed depending on the electrical open / close signal.
31 to freewheel diode in which the diode forward direction is opposite to the current flowing in the semiconductor switch 30 when the semiconductor switch 30 is closed and connected in parallel with the semiconductor switch 30.
32 to a current sensor terminal for outputting a voltage proportional to the current flowing through the semiconductor switch 30
50 ~ Electrically close the semiconductor switch 30 after a certain time Ton from the time of the change of the electrical open and close signal, and electrically turn off the semiconductor switch 30 after Toff depending on the voltage measured through the terminal 55 in dependence on the electrical open and close signal. Semiconductor switch driving unit
51, 52 ~ two open / close signal terminals to which an electrical open / close signal is connected to open or close an electrical connection between the two power terminals 10, 20.
52, 53 ~ terminals for driving the semiconductor switch 30
55 ~ terminal for automatically controlling the semiconductor switch 30 by detecting the voltage
60 ~ frame to prevent heat damage by heat dissipation function of the semiconductor switch 30, and the structural arrangement of the contact relay and the contact relay mechanically
70 ~ fixed electrode of external relay or fixed electrode of hybrid switch
80 ~ moving electrode of external relay or moving electrode of hybrid switch
90 ~ mobile electrode drive of external relay or mobile electrode drive of hybrid switch
100 ~ frame of external relay

Claims (17)

Two terminals (10, 20) for facilitating electrical connection between an external system and the present invention; Terminals 51 and 52 to which an electrical signal for opening and closing an electrical connection between two terminals 10 and 20 is connected; A semiconductor switch 30 electrically connected to the two terminals 10 and 20 and capable of being electrically opened and closed through terminals 52 and 53 in dependence on the electrical signal; Depending on the electrical signal, the semiconductor switch 30 is electrically closed at a specific time Ton from the time of the electrical signal change, and the semiconductor switch 30 is electrically connected at the specific time Toff from the time of the electrical signal change depending on the electrical signal. An open semiconductor switch driver 50; A frame for preventing the damage caused by the heat of the semiconductor switch 30, respectively, and mechanically arranges and connects the contact elements (10, 20, 30, 50, 51, 52, 53, 54) and the contact relay Arc eliminator and method of using the arc eliminator, characterized in that it comprises (60) Two power terminals (10, 20) for facilitating electrical connection between an external system and the present invention; Opening and closing signal terminals 51 and 52 to which an electrical opening and closing signal for opening and closing an electrical connection between two power terminals 10 and 20 is connected; A semiconductor switch 30 electrically connected to the two terminals 10 and 20 and capable of being electrically opened and closed through terminals 52 and 53 in dependence on the electrical signal; Depending on the electrical signal, the semiconductor switch 30 is electrically closed at a specific time Ton from the time of the electrical signal change, and the semiconductor switch 30 is electrically connected at the specific time Toff from the time of the electrical signal change depending on the electrical signal. An open semiconductor switch driver 50; A fixed electrode 70 connected to the terminal 10 by a conductor and fixed thereto; A movable electrode 80 connected to the terminal 20 by a conductor and movable; The movable electrode 80 is moved in response to the electrical opening / closing signal to convert the fixed electrode 70 and the movable electrode 80 into a contact state in a spaced apart state, and in the contact state, the movable electrode 80 is moved to fix the fixed electrode ( A contact relay driving device 90 for converting the 70 and the moving electrode 80 into a spaced state; To prevent the damage caused by the heat generation of the semiconductor switch 30, the components 10, 20, 30, 50, 51, 52, 53, 54, 70, 80, 90 mechanically arranged connection Hybrid switch characterized in that it comprises a frame 60 Two terminals (10, 20) for facilitating electrical connection between an external system and the present invention; Terminals 51 and 52 to which an electrical signal for opening and closing an electrical connection between two terminals 10 and 20 is connected; A semiconductor switch 30 electrically connected to the two terminals 10 and 20 and capable of being electrically opened and closed through terminals 52 and 53 in dependence on the electrical signal; A freewheel diode 31 in which the diode forward direction is opposite to the current flowing in the semiconductor switch 30 when the semiconductor switch 30 is closed and connected in parallel with the semiconductor switch 30; Depending on the electrical signal, the semiconductor switch 30 is electrically closed at a specific time Ton from the time of the electrical signal change, and the semiconductor switch 30 is electrically connected at the specific time Toff from the time of the electrical signal change depending on the electrical signal. An open semiconductor switch driver 50; It prevents each damage caused by the heat generation of the semiconductor switch 30, and mechanically arranges and connects the contact relays and the contact relay with the invention components (10, 20, 30, 31, 50, 51, 52, 53, 54) Arc eliminator and arc eliminator method characterized in that it comprises a frame (60) Two power terminals (10, 20) for facilitating electrical connection between an external system and the present invention; Opening and closing signal terminals 51 and 52 to which an electrical opening and closing signal for opening and closing an electrical connection between two power terminals 10 and 20 is connected; A semiconductor switch 30 electrically connected to the two terminals 10 and 20 and capable of being electrically opened and closed through terminals 52 and 53 in dependence on the electrical signal; A freewheel diode 31 in which the diode forward direction is opposite to the current flowing in the semiconductor switch 30 when the semiconductor switch 30 is closed and connected in parallel with the semiconductor switch 30; Depending on the electrical signal, the semiconductor switch 30 is electrically closed at a specific time Ton from the time of the electrical signal change, and the semiconductor switch 30 is electrically connected at the specific time Toff from the time of the electrical signal change depending on the electrical signal. An open semiconductor switch driver 50; A fixed electrode 70 connected to the terminal 10 by a conductor and fixed thereto; A movable electrode 80 connected to the terminal 20 by a conductor and movable; The movable electrode 80 is moved in response to the electrical opening / closing signal to convert the fixed electrode 70 and the movable electrode 80 into a contact state in a spaced apart state, and in the contact state, the movable electrode 80 is moved to fix the fixed electrode ( A contact relay driving device 90 for converting the 70 and the moving electrode 80 into a spaced state; To prevent the damage caused by the heat generation of the semiconductor switch 30, the components 10, 20, 30, 50, 51, 52, 53, 54, 70, 80, 90 mechanically arranged connection Hybrid switch characterized in that it comprises a frame 60 Two terminals (10, 20) for facilitating electrical connection between an external system and the present invention; Terminals 51 and 52 to which an electrical signal for opening and closing an electrical connection between two terminals 10 and 20 is connected; A semiconductor switch 30 electrically connected to the two terminals 10 and 20 and capable of being electrically opened and closed through terminals 52 and 53 in dependence on the electrical signal; In response to the electrical signal, the semiconductor switch 30 is electrically closed at a specific time Ton from the time of the change of the electrical signal, and the time at which the voltage measured through the terminal 55 becomes higher than a predetermined value depending on the electrical signal. A semiconductor switch driver 50 which electrically opens the semiconductor switch 30 at Toff; It prevents the damage caused by the heat generation of the semiconductor switch 30, and mechanically arranges the contact relays and the contact relays 10, 20, 30, 50, 51, 52, 53, 54, 55 Improved arc eliminator and improved arc eliminator method characterized in that it comprises a frame (60) Two power terminals (10, 20) for facilitating electrical connection between an external system and the present invention; Opening and closing signal terminals 51 and 52 to which an electrical opening and closing signal for opening and closing an electrical connection between two power terminals 10 and 20 is connected; A semiconductor switch 30 electrically connected to the two terminals 10 and 20 and capable of being electrically opened and closed through terminals 52 and 53 in dependence on the electrical signal; A freewheel diode 31 in which the diode forward direction is opposite to the current flowing in the semiconductor switch 30 when the semiconductor switch 30 is closed and connected in parallel with the semiconductor switch 30; The semiconductor switch 30 is electrically closed at a specific time Ton from the time point at which the electrical signal changes, depending on the electrical signal, and the semiconductor switch at a specific time Toff depending on the voltage measured through the terminal 55 in dependence on the electrical signal. A semiconductor switch driver 50 which electrically opens 30; A fixed electrode 70 connected to the terminal 10 by a conductor and fixed thereto; A movable electrode 80 connected to the terminal 20 by a conductor and movable; The movable electrode 80 is moved in response to the electrical opening / closing signal to convert the fixed electrode 70 and the movable electrode 80 into a contact state in a spaced apart state, and in the contact state, the movable electrode 80 is moved to fix the fixed electrode ( A contact relay driving device 90 for converting the 70 and the moving electrode 80 into a spaced state; To prevent the damage caused by the heat generation of the semiconductor switch 30, the invention components (10, 20, 30, 50, 51, 52, 53, 54, 55, 70, 80, 90) mechanically Improved hybrid switch characterized in that it comprises a frame 60 for batch connection Two terminals (10, 20) for facilitating electrical connection between an external system and the present invention; Terminals 51 and 52 to which an electrical signal for opening and closing an electrical connection between two terminals 10 and 20 is connected; A semiconductor switch 30 electrically connected to the two terminals 10 and 20 and capable of being electrically opened and closed through terminals 52 and 53 in dependence on the electrical signal; A freewheel diode 31 in which the diode forward direction is opposite to the current flowing in the semiconductor switch 30 when the semiconductor switch 30 is closed and connected in parallel with the semiconductor switch 30; The semiconductor switch 30 is electrically closed at a specific time Ton from the time point at which the electrical signal changes, depending on the electrical signal, and the semiconductor switch at a specific time Toff depending on the voltage measured through the terminal 55 in dependence on the electrical signal. A semiconductor switch driver 50 which electrically opens 30; In order to prevent the damage caused by the heat generation of the semiconductor switch 30, the contact relays and the mechanical components (10, 20, 30, 31, 50, 51, 52, 53, 54, 55) Improved arc eliminator and improved method of using the arc eliminator characterized in that it comprises a frame (60) for connecting the arrangement Two power terminals (10, 20) for facilitating electrical connection between an external system and the present invention; Opening and closing signal terminals 51 and 52 to which an electrical opening and closing signal for opening and closing an electrical connection between two power terminals 10 and 20 is connected; A semiconductor switch 30 electrically connected to the two terminals 10 and 20 and capable of being electrically opened and closed through terminals 52 and 53 in dependence on the electrical signal; A freewheel diode 31 in which the diode forward direction is opposite to the current flowing in the semiconductor switch 30 when the semiconductor switch 30 is closed and connected in parallel with the semiconductor switch 30; The semiconductor switch 30 is electrically closed at a specific time Ton from the time point at which the electrical signal changes, depending on the electrical signal, and the semiconductor switch at a specific time Toff depending on the voltage measured through the terminal 55 in dependence on the electrical signal. A semiconductor switch driver 50 which electrically opens 30; A fixed electrode 70 connected to the terminal 10 by a conductor and fixed thereto; A movable electrode 80 connected to the terminal 20 by a conductor and movable; The movable electrode 80 is moved in response to the electrical opening / closing signal to convert the fixed electrode 70 and the movable electrode 80 into a contact state in a spaced apart state, and in the contact state, the movable electrode 80 is moved to fix the fixed electrode ( A contact relay driving device 90 for converting the 70 and the moving electrode 80 into a spaced state; It prevents each damage caused by the heat generation of the semiconductor switch 30, and the components 10, 20, 30, 31, 50, 51, 52, 53, 54, 55, 70, 80, 90 Improved hybrid switch, characterized in that it comprises a frame 60 for connecting the arrangement 9. An improved arc eliminator and an improved method of using an arc eliminator and an improved hybrid switch according to any of claims 5 to 8, characterized by a semiconductor switch 30 comprising a real time control (RTC) based current control. 10. The method according to claim 1, wherein after the switching signal is changed from 1 to 0, T_on is before the time T_move at which the fixed electrode 70 and the moving electrode 80 start to be separated, and T_off is the fixed electrode 70. ) Arc eliminator characterized by a semiconductor switch driver 50 after a time (T_move + T_open) at which the separation distance between the moving electrode 80 and d_arc is greater than or equal to d_arc, a method of using an arc eliminator, a hybrid switch, and an improved arc Eliminators, Improved Arc Eliminator Usage, and Improved Hybrid Switches The method according to claim 1 to 10, after the opening and closing signal is changed from 0 to 1, T_on is before the time T_arc when the distance d of approaching the fixed electrode 70 and the moving electrode 80 is reduced to become d_arc, After the signal changes from 1 to 0, T_off is characterized in that the semiconductor switch driver 50 after the time (T_move + T_open) when the distance d between the fixed electrode 70 and the moving electrode 80 is greater than d_arc Arc Eliminators, How to Use Arc Eliminators, Hybrid Switches, Improved Arc Eliminators, Improved Arc Eliminators, Improved Hybrid Switches 12. The method of claim 1 to 11, after the opening and closing signal changes from 1 to 0, T_on is after the time (T_move + T_open) when the separation distance d between the fixed electrode 70 and the moving electrode 80 is greater than d_arc. , T_off is the arc eliminator characterized by the semiconductor switch driver 50 after the arc removal time (T_move + T_open + T_close), the method of using the arc eliminator, the hybrid switch, the improved arc eliminator, and the improved How to use the arc eliminator and improved hybrid switch The semiconductor switch driver 50 according to claim 5, wherein the semiconductor switch driver 50 protects the semiconductor switch 30 by opening the semiconductor switch 30 when the voltage measured through the terminal 55 becomes equal to or greater than a preset value. Improved arc eliminator and improved arc eliminator usage and improved hybrid switch 14. The driving of the semiconductor switch 30 according to claim 1 to claim 13, wherein the driving of the semiconductor switch 30 is prevented when the power supply voltage of the semiconductor switch driving device 50 is not high enough to apply a sufficient voltage between the terminals 53 and 54. An arc eliminator, a method of using an arc eliminator, a hybrid switch, an improved arc eliminator, an improved method of using an arc eliminator, and an improved hybrid switch including a semiconductor switch driver 50 including a UVLO function. 15. An arc eliminator and method of using an arc eliminator as claimed in claim 1 to claim 14, characterized in that the semiconductor switch driver (50) comprises a semiconductor switch driver (50) comprising a slow off function for slowly opening the semiconductor switch (30). And, hybrid switches, improved arc eliminators, improved arc eliminator usage, and improved hybrid switches 16. The semiconductor switch driver 50 according to any one of claims 1 to 15, wherein the semiconductor switch 30 is an insulated gate bipolar transistor (IGBT) or a field effect transistor (FET) and includes a gate voltage clamp function of the semiconductor switch 30. Arc eliminator, how to use the arc eliminator, hybrid switch, improved arc eliminator, improved arc eliminator method, and improved hybrid switch 17. An arc eliminator, a method of using an arc eliminator, a hybrid switch, and an improvement, comprising: a semiconductor switch driver 50 comprising a gate emitter voltage clamp function of the semiconductor switch 30; Arc Eliminators, How to Use Improved Arc Eliminators, and Improved Hybrid Switches

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US11303111B2 (en) 2018-12-26 2022-04-12 Eaton Intelligent Power Limited Configurable modular hazardous location compliant circuit protection devices, systems and methods
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KR20160013766A (en) * 2014-07-28 2016-02-05 (주)도일코리아 An electronic switch comprising a surge filter circuit having two low pass filters.
CN106094958A (en) * 2016-06-07 2016-11-09 浙江腾腾电气有限公司 A kind of self adaptation being applied on manostat is reduced internal heat arc means of relay controlling
US11239652B2 (en) 2018-12-26 2022-02-01 Eaton Intelligent Power Limited Compliant, hazardous environment circuit protection devices, systems and methods
US11270854B2 (en) 2018-12-26 2022-03-08 Eaton Intelligent Power Limited Circuit protection devices, systems and methods for explosive environment compliance
US11303111B2 (en) 2018-12-26 2022-04-12 Eaton Intelligent Power Limited Configurable modular hazardous location compliant circuit protection devices, systems and methods
US11615925B2 (en) 2018-12-26 2023-03-28 Eaton Intelligent Power Limited Hazardous location compliant circuit protection devices having enhanced safety intelligence, systems and methods
US11613915B2 (en) 2018-12-26 2023-03-28 Eaton Intelligent Power Limited Mechanical lockout for non-mechanical-interfacing electronic switch
US11250997B1 (en) 2021-05-12 2022-02-15 Jeffrey Ross Gray High voltage switch

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