KR20100042394A - Semiconductor chip package having the heat sink - Google Patents

Abstract

PURPOSE: A semiconductor chip package is provided to improve a lifetime and a property of a semiconductor product by decreasing an average temperature. CONSTITUTION: A semiconductor chip package(30) comprises a semiconductor chip(160), an encapsulating material(150), a heat sink member, and a heat dissipation lead(330). The encapsulating material covers the semiconductor chip. The heat sink member is adjacent to the encapsulating material. The heat dissipation lead passes through the encapsulating material. One end of the heat dissipation lead is contacted with the heat sink member and the other end thereof is adjacent to the semiconductor chip.

Description

Semiconductor chip package having a heat dissipation member

The present invention relates to a semiconductor device, and more particularly to a semiconductor chip package having a heat radiating member.

Recently, as the electronic related fields related to electronic devices are rapidly advanced, the use of semiconductor chips having improved integration degree of semiconductor devices is increasing.

As the degree of integration of the semiconductor device increases, data throughput and processing speed of the semiconductor chip should increase.

Accordingly, heat generated in the semiconductor chip may also increase. The heat may cause deterioration of the life characteristics, the operating speed, and the like of the semiconductor device.

Therefore, there is a need for a heat dissipation means capable of treating heat that causes a decrease in product characteristics of the semiconductor device.

SUMMARY OF THE INVENTION The present invention has been made in an effort to improve the above-described problems of the related art, and to provide a semiconductor chip package capable of emitting heat.

Another object of the present invention is to provide a semiconductor product having a semiconductor chip package capable of improving characteristics such as refresh characteristics, operating speed characteristics, product lifespan, and the like.

In order to achieve the above technical problem, the present invention provides a semiconductor chip package having a heat dissipation member.

Provided is a semiconductor chip package having a heat dissipation member. The semiconductor chip package includes a semiconductor chip. The semiconductor chip is covered by an encapsulant. The heat dissipation member is disposed adjacent to the encapsulant. The heat dissipation leads may be provided through the encapsulant. At this time, one end of the heat dissipation lead is in contact with the heat dissipation member. The other ends of the heat dissipation leads may be disposed adjacent to the semiconductor chip.

In some embodiments of the present disclosure, the method may further include a lead frame having leads penetrating the encapsulant. The lead frame may be attached to the semiconductor chip. The leads may include connection leads connected to the semiconductor chip and dummy leads insulated from the semiconductor chip. The leads may include outer leads protruding to the outside of the encapsulant and inner leads extending into the outer leads and disposed inside the encapsulant.

In another embodiment, the heat dissipation leads may be disposed on the dummy leads. The heat dissipation leads may be disposed on the connection leads. The heat dissipation leads may be disposed on the dummy leads and the connection leads, respectively. The heat dissipation leads may be disposed between the dummy leads. The heat dissipation leads may be disposed between the connection leads. The heat dissipation leads may be disposed between the dummy leads and the connection leads. The heat dissipation leads may be disposed to cross the dummy leads and the connection leads.

In another embodiment, the heat dissipation leads may be disposed outside the heat dissipation lead through the encapsulant and the inner heat dissipation lead extending to the outer heat dissipation lead and disposed adjacent to the semiconductor chip inside the encapsulant. It can be provided.

In another embodiment, the inner heat dissipation lead is disposed on the inner lead in the encapsulant or adjacent to the inner lead, and is formed at a predetermined height in the direction of the heat dissipation member, and the inner heat dissipation leads The external heat dissipation lead may be formed in the direction of the heat dissipation member through the encapsulant.

In another embodiment, the heat dissipation leads may be formed along the surface direction of the leads, and the heat dissipation leads may be bent toward the heat dissipation member.

In another embodiment, the external heat dissipation lead may be disposed between the heat dissipation member and the encapsulant.

In another embodiment, the semiconductor device may further include a connection region for connecting the semiconductor chip and the leads to ends of the leads adjacent to the semiconductor chip.

In another embodiment, the adhesive member may further include a lower portion of the inner heat shield.

In another embodiment, the adhesive member may be formed of any one of a non-conductive tape and epoxy having heat transfer characteristics.

According to the present invention, it is possible to reduce the junction temperature of the semiconductor chip package and to improve characteristics such as refresh characteristics, operating speed characteristics, and product life of the semiconductor product having the semiconductor chip package.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided so that the disclosure may be made thorough and complete, and to fully convey the spirit of the present invention to those skilled in the art. In the drawings, the thicknesses of layers and regions are exaggerated for clarity. In addition, where a layer is said to be "on" another layer or substrate, it may be formed directly on the other layer or substrate, or a third layer may be interposed therebetween. Portions denoted by like reference numerals denote like elements throughout the specification.

1A and 1B are plan views illustrating a semiconductor chip package according to a first embodiment of the present invention, and FIGS. 1C and 1D are modified embodiments of arrangement of dummy leads and heat dissipation leads according to a first embodiment of the present invention. It is a top view which shows the example. FIG. 2A is a cross-sectional view taken along line II ′ of FIG. 1B, FIG. 2B is a cross-sectional view taken along line II-II ′ of FIG. 1B, and FIG. 2C is a cross-sectional view taken along line AA ′ of FIG. 1D. FIG. 1B is a plan view illustrating the bending of the leads in FIG. 1A.

1A, 1B, 2A, and 2B, the semiconductor chip package 10 may include a lead frame 105 having leads. The leads may include connection leads 110 connected to the semiconductor chip 160 and dummy leads 120 insulated from the semiconductor chip 160.

The connection leads 110 may be formed in the same shape (size, shape) as the dummy leads 120. The connection leads 110 may be used as circuit lines through which the semiconductor chip package 10 is connected to other circuits to receive electrical signals. The connection leads 110 may be formed of a metal having thermal conductivity.

In addition, the dummy leads 120 may be formed of the same material at the same time when the connection leads 110 are formed.

The heat dissipation leads 130 may be disposed on the dummy leads 120 along the surface direction of the dummy leads 120.

The semiconductor chip 160 may be disposed in the center region of the lead frame 105.

An attachment tape 165 may be further provided between the semiconductor chip 160 and the lead frame 105 in order to attach the semiconductor chip 160 to the central region of the lead frame 105.

An encapsulant 150 may be formed in a central region of the lead frame 105 to encapsulate the semiconductor chip 160 disposed on the lead frame 105. In this case, some of the connection leads 110 and the dummy leads 120 may be covered by the encapsulant 150.

The connection leads 110 and the dummy leads 120 in the area encapsulated by the encapsulant 150 may be defined as internal connection leads 113 and internal dummy leads 123, respectively. The connection leads 110 and the dummy leads 120 disposed outside the encapsulant 150 may be defined as external connection leads 115 and external dummy leads 125, respectively.

The heat dissipation leads 130 may also be defined as internal heat dissipation leads 133 disposed inside the encapsulant 150 and external heat dissipation leads 135 disposed outside the encapsulant 150.

The connection leads 110 may form a connection region C at ends of the internal connection leads 113 to be connected to the semiconductor chip 160. The connection area C may not be formed in the inner dummy leads 123. The connection region C may include a wire bonding 170 for electrically connecting the semiconductor chip 160 and the connection leads 110 to each other.

The heat dissipation leads 130 are formed on the dummy leads 120. In this case, the heat dissipation leads 130 may be formed in the same shape (size, shape, etc.) for easy formation.

An adhesive member 140 may be further provided between the inner heat dissipation member 133 and the inner dummy leads 123. The adhesive member 140 may be formed of a material having thermal conductivity, and may be formed of a material capable of adhering the dummy leads 120 and the heat dissipation leads 130 to each other. The adhesive member 140 may be formed of an adhesive material including at least one of a nonconductive tape and an epoxy.

On the other hand, the heat dissipation member 190 is formed outside the encapsulant 150 to be spaced apart from the encapsulant 150. The heat dissipation member 190 may be formed of a metal, a polymer, or the like to facilitate heat transfer.

The connection leads 110 and the dummy leads 120 may be bent. Herein, the areas bent in the connection leads 110 and the dummy leads 120 may include the external connection leads 115 and the external dummy leads 125 disposed outside the encapsulant 150. Can be bent.

The connection leads 110 may be bent to connect to other circuit lines, and the dummy leads 120 may be bent in the same direction when the connection leads 110 are bent.

The external heat dissipation leads 135 may be bent toward the heat dissipation member 190.

The external connection leads 115 and the external dummy leads 125 may be bent in the downward direction of the encapsulant 150 by looking at the drawings. The external heat dissipation lead 135 may be bent in the direction of the encapsulant 150 differently from the direction in which the external connection lead 115 is bent.

One side of the outer heat dissipation lead 135 may be bent to contact the encapsulant 150, and the other side of the outer heat dissipation lead 135 may face the heat dissipation member 190. Can be placed in contact. Here, end portions of the inner heat dissipation leads 133 formed integrally with the outer heat dissipation leads 135 are disposed adjacent to the semiconductor chip 160.

Thus, the inner heat dissipation leads 133 may easily transfer heat generated from the semiconductor chip 160 to the outer heat dissipation leads 135. Accordingly, the heat dissipation leads 130 may emit heat generated in the semiconductor chip 160 to the outside, and the heat dissipation leads 130 may be bent to contact the heat dissipation member 190 to perform a heat dissipation function. can do.

In addition, the external heat dissipation leads 135 may be in contact with the surface of the encapsulant 150 to easily transfer heat transferred to the encapsulant 150 to the external heat dissipation leads 135.

Accordingly, heat generated from the semiconductor chip 160 disposed in the encapsulant 150 may be discharged to the outside through the heat dissipation leads 130.

Therefore, heat of the semiconductor chip package 10 may be discharged to the outside. That is, the junction temperature of the semiconductor chip package 10 may be lowered. In addition, it is possible to improve characteristics such as refresh characteristics, operating speed characteristics, product lifespan, etc. of the semiconductor product having the semiconductor chip package 10.

Referring to FIG. 1C, the arrangement of the dummy leads 120 or the connection leads 110 may be changed.

The dummy leads 120 and the connection leads 110 may be alternately disposed. The above embodiment will be described with reference to the drawings as shown in the same view as in Figures 1a and 1b in cross-sectional view.

First, the dummy leads 120 may be disposed between the connection leads 110. The heat dissipation leads 130 may be disposed on the dummy leads 120 disposed between the connection leads 110.

As such, by disposing the heat dissipation leads 130 on the dummy leads 120 between the connection leads 110, the number of arrangement of the heat dissipation leads 130 in the semiconductor chip package 10 is increased. You can. Accordingly, the average temperature of the semiconductor chip package 10 may be reduced without forming additional leads.

1D and 2C, the heat dissipation leads 130 may be disposed in the separation region K in which the dummy leads 120 or the connection leads 110 are spaced apart from each other. That is, the heat dissipation leads 130 may be disposed alone in the separation region K between the connection leads 110 or the dummy leads 120.

In this case, the heat dissipation leads 130 may be disposed on the semiconductor chip 160. In addition, the adhesive member 140 may be further disposed between the semiconductor chip 160 and the heat dissipation leads 130.

Therefore, the temperature of the semiconductor chip package 10 may be lowered by utilizing the space of the semiconductor chip package 10. As such, by increasing the number of arrangement of the heat dissipation leads 130, the heat of the semiconductor chip package 10 may be easily discharged to the outside.

Accordingly, the average temperature of the semiconductor chip package 10 may be lowered. In addition, it is possible to improve characteristics such as refresh characteristics, operating speed characteristics, product lifespan, etc. of the semiconductor product having the semiconductor chip package 10.

3A and 3B are plan views illustrating a semiconductor chip package according to a second embodiment of the present invention, FIG. 4A is a cross-sectional view taken along line III-III 'of FIG. 3B, and FIG. 4B is taken along line IV-IV' of FIG. 3B. According to the cross-sectional view. 1A, 1B, 2A, and 2B of the first embodiment will be described herein, and the same elements described in the first embodiment will be briefly described or omitted. The second embodiment can be equally applied to the components of the first embodiment, and only differences of the embodiments will be described.

3A, 3B, 4A, and 4B, the semiconductor chip package 30 according to the second embodiment is disposed on the connection leads 310 and the dummy leads 320, respectively. The heat dissipation leads 330 formed along the direction of the surface 320 and the connection leads 310 may be provided.

The semiconductor chip 160 may be disposed in a central region of the lead frame 305, and the lead frame 305 and the semiconductor chip 160 may be attached to the lead frame 305. Attachment tape 165 may be provided between the.

In order to encapsulate the semiconductor chip 160, an encapsulant 150 may be formed in the lead frame 305 around the semiconductor chip 160.

In this case, a connection area C exposing the inner connecting leads 313 and the inner dummy leads 323 may be provided at ends of the inner connecting leads 313 and the inner dummy leads 323. . That is, the inner heat dissipation leads 333 may not be formed at ends of the inner connection leads 313 and the inner dummy leads 323.

Herein, end portions of the internal connection leads 313 in the connection region C may form a wire bonding 170 to be electrically connected to the semiconductor chip 160.

The internal dummy leads 323 are leads not connected to the semiconductor chip 160. The heat dissipation leads 330 are formed on the inner dummy leads 323 and the inner connection leads 313. The heat dissipation leads 330 have the same shape (size, shape, etc.) for easy formation. 330 may be formed.

An adhesive member 340 may be further formed between the inner heat dissipation leads 333 and the inner connection lead 313. In addition, the adhesive member 340 may be formed between the inner heat dissipation member 333 and the inner dummy lead 323.

The adhesive member 340 may be formed of an adhesive material including at least one of an electrically insulating material and a non-conductive tape and epoxy capable of heat transfer.

On the other hand, the heat dissipation member 390 is formed outside the encapsulant 150 adjacent to the encapsulant 150. The heat dissipation member 390 may be formed of a metal, a polymer, or the like for easy heat transfer.

The external connection leads 315, the external dummy leads 325, and the external heat dissipation leads 335 may be bent. Here, the external connection leads 315 and the external dummy leads 325 may be bent in the same direction. The external heat dissipation leads 335 may be bent to the external connection leads 315 and the external dummy leads 325 in different directions.

The external heat dissipation leads 335 may be disposed between the encapsulant 150 and the heat dissipation member 390. Accordingly, the external heat radiation leads 335 are in contact with the heat radiation member 390.

As such, the heat dissipation leads 330 may be disposed on the dummy leads 320 and the connection leads 310 so that heat of the semiconductor chip package 30 may be easily discharged to the outside.

Accordingly, the average temperature of the semiconductor chip package 30 may be lowered. In addition, it is possible to improve characteristics such as refreshing characteristics, operating speed characteristics, product lifespan, etc. of semiconductor products having the semiconductor chip package 30.

5A and 5B are plan views illustrating a semiconductor chip package according to a third embodiment of the present invention, FIG. 6A is a cross-sectional view taken along line VV ′ of FIG. 5B, and FIG. 6B is a third embodiment of the present invention. A plan view illustrating an embodiment in which the arrangement of the dummy leads and the connecting leads is changed.

Here, the third embodiment will be described with reference to FIGS. 1A to 2B showing the first embodiment, and overlapping contents will be omitted or briefly described. The third embodiment may be equally applied to the components of the first embodiment, and only differences of the embodiments will be described.

5A, 5B, and 6A, the semiconductor chip package 50 according to the third embodiment may include a lead frame 505 having connection leads 510 and dummy leads 520. .

The connection leads 510 are leads electrically connected to the semiconductor chip 160, and the dummy leads 520 between the connection leads 510 according to the design of the semiconductor chip package 50. Can be placed. The dummy leads 520 may be leads that are not electrically connected to the semiconductor chip 160.

In addition, the semiconductor chip 160, and each of the connection leads 510 and the dummy leads 520 is partially sealed by the encapsulant 150, so that the internal connection leads 513 and the inside Dummy leads 523 may be formed. In addition, external connection leads 515 and external dummy leads 525 respectively disposed on the outside of the encapsulant 150 may be formed.

The heat dissipation member 590 adjacent to the encapsulant 150 may be provided.

Heat dissipation leads 530 may be formed on the inner dummy leads 523 disposed in the inner region of the encapsulant 150.

The heat dissipation leads 530 may be formed to protrude through the encapsulant 150 in a direction in which the heat dissipation member 590 is disposed. Here, the heat dissipation leads 530 may be formed with internal heat dissipation leads 533 disposed inside the encapsulant 150. The inner heat dissipation leads 533 may be disposed on the inner dummy lead 523 in the encapsulant 150 to have a predetermined height toward the heat dissipation member 590.

The outer heat dissipation lead 535 may be formed on the inner heat dissipation leads 533 in the direction of the heat dissipation member 590 through the encapsulant 150. That is, the external heat radiation leads 535 may be formed to protrude to the outside of the encapsulant 150.

Protruding surfaces of the external heat dissipation leads 535 protruding to the outside of the encapsulant 150 on the heat dissipation leads 530 may contact the heat dissipation member 590. Therefore, the average temperature of the semiconductor chip package 50 may be lowered.

Referring to FIG. 6B, the dummy leads 520 and the connection leads 510 may be alternately disposed. Therefore, the semiconductor chip package 50 may further include the heat dissipation leads 530 capable of dissipating heat.

Accordingly, heat inside the semiconductor chip package 50 may be discharged to the outside through the heat dissipation leads 530.

Therefore, the average temperature of the semiconductor chip package 50 may be lowered. And it is possible to improve the characteristics, such as the refresh characteristics, operating speed characteristics, product life of the semiconductor product having the semiconductor chip package 50.

7A and 7B are plan views of a semiconductor chip package according to a fourth embodiment of the present invention, FIG. 8A is a sectional view taken along line VII-VII 'of FIG. 7B, and FIG. 8B is taken along VIII-VIII' according to FIG. 7B. It is a cross section. For ease of description of the fourth embodiment, a description will be given with reference to FIGS. 5A to 6A illustrating the third embodiment, and overlapping elements will be omitted or briefly described. The fourth embodiment can be equally applied to the components of the third embodiment, and only differences of the embodiments will be described.

7A to 8B, in the semiconductor chip package 70 according to the fourth embodiment, heat dissipation leads 730 may be disposed on the interconnecting leads 713 and the inner dummy leads 723, respectively. .

The heat dissipation leads 730 may be formed to protrude through the encapsulant 150 in the direction in which the heat dissipation member 790 is formed. Herein, the heat dissipation leads 730 may be formed with internal heat dissipation leads 733 disposed inside the encapsulant 150, and the encapsulation material outside the encapsulant 150 on the internal heat dissipation leads 733. Protruding external heat shield leads 735 may be formed.

Protruding surfaces of the external heat dissipation leads 735 protruding to the outside of the encapsulant 150 among the heat dissipation leads 730 may contact the heat dissipation member 790.

Meanwhile, ends of the connection leads 710 adjacent to the semiconductor chip 760 may form a connection region C electrically connected to the semiconductor chip 760. The connection region C exposing the connection leads 710 from the heat dissipation leads 730 and the adhesive member 740 is formed to connect the connection leads 710 to the semiconductor chip 160. can do. That is, the heat dissipation leads 730 and the adhesive member 740 may not be formed in the connection region 710.

In addition, a wire bonding 170 may be formed in the connection region C to electrically connect the semiconductor chip 160 and the connection leads 710.

The semiconductor chip package 70 formed as described above may discharge heat inside the semiconductor chip package 70 to the outside through the heat dissipation leads 730. Therefore, the average temperature of the semiconductor chip package 70 may be lowered.

And it is possible to improve the characteristics such as the refresh characteristics, operating speed characteristics, product life of the semiconductor product having the semiconductor chip package 70.

9A and 9B are plan views of a semiconductor chip package according to a fifth embodiment of the present invention, and FIG. 10 is a cross-sectional view taken along line IX-IX 'of FIG. 9B. Here, the third embodiment will be described with reference to FIGS. 5A to 6A for easy description of the fifth embodiment, and overlapping components will be omitted or briefly described. The fifth embodiment can be equally applied to the components of the third embodiment, and only differences of the embodiments will be described.

9A to 10, in the semiconductor chip package 90 according to the fifth embodiment, the connection leads 910 or the dummy leads 920 are spaced apart at predetermined intervals.

In this case, the gap may be defined as the separation region K, and the heat dissipation leads 930 may be disposed in the separation region K. As described above, the heat dissipation leads 930 may be disposed between the connection leads 910 or the dummy leads 920 by using spaces spaced from the lead frame 905.

The heat dissipation member 990 may be disposed adjacent to the encapsulant 150.

The heat dissipation leads 930 may be formed to protrude through the encapsulant 150 in a direction in which the heat dissipation member 990 is formed. The heat dissipation leads 930 may include internal heat dissipation leads 933 disposed inside the encapsulant 150, and may be formed on the inner heat dissipation leads 933 to the outside of the encapsulant 150. Protruding external heat dissipation leads 935 may be formed.

An adhesive member 940 may be formed under the heat dissipation leads 930. The adhesive member 940 may be formed of an adhesive material including at least one of an electrically insulated and non-conductive tape or epoxy for thermally transferring heat.

Since the heat dissipation leads 930 are disposed in the separation region K, the adhesive member 940 may be disposed between the internal heat dissipation leads 933 and the semiconductor chip 160. In addition, the adhesive member 940 may be formed to include a part of the attachment tape 165.

Protruding surfaces of the external heat dissipation leads 935 protruding from the heat dissipation leads 930 to the outside of the encapsulant 150 may contact the heat dissipation member 990. Accordingly, heat inside the semiconductor chip package 90 may be discharged to the outside through the heat dissipation leads 930.

Accordingly, heat inside the semiconductor chip package 90 may be discharged to the outside through the heat dissipation leads 930.

Therefore, the average temperature of the semiconductor chip package 90 may be lowered. In addition, it is possible to improve characteristics such as refreshing characteristics, operating speed characteristics, and product lifespan of semiconductor products including the semiconductor chip package 90.

11A and 11B are plan views of a semiconductor chip package according to a sixth embodiment of the present invention, FIG. 12A is a cross-sectional view taken along line XI-XI 'in FIG. 11B, and FIG. 12B is a cross-sectional view taken along line XII-XII' in FIG. 11B. to be. Here, the third embodiment will be described with reference to FIGS. 5A to 6A for easy description of the sixth embodiment, and overlapping components will be omitted or briefly described. In addition, the sixth embodiment may be equally applicable to the components of the third embodiment, and only differences of the embodiments will be described.

11A through 12B, in the semiconductor chip package 100 according to the fifth embodiment, the connection leads 1110 or the dummy leads 1120 are spaced at a predetermined interval. In this case, the gap may be defined as the separation area K.

The heat dissipation leads 1130 may be disposed in the connection leads 1110, the dummy leads 1120, and the separation region K. FIG.

The heat dissipation leads 1130 may be provided in a panel shape in order to be disposed in the region.

The semiconductor chip 160 may be disposed in the central region of the lead frame 1105, and the encapsulant 150 encapsulating the semiconductor chip 160 may include the semiconductor chip 160 and the connection leads 1110. ) And a portion of the dummy leads 1120.

The heat dissipation member 1190 may be disposed adjacent to the encapsulant 150.

An adhesive member 1140 may be formed under the heat dissipation leads 1130. The adhesive member 1140 may be formed of an adhesive material including at least one of an electrically insulated and non-conductive tape or epoxy for thermally transferring heat.

The heat dissipation leads 1130 may be disposed on the connection leads 1110 as the heat dissipation leads 1130 are disposed on the connection leads 1110, the dummy leads 1120, and the separation region K. The cross-sectional view and the cross-sectional view formed along the dummy leads 1120 may be formed as shown in FIGS. 12A and 12B, respectively.

The heat dissipation leads 1130 may be formed as shown in FIG. 10 by being disposed in the separation region K. FIG. The adhesive member 1140 may be disposed between the heat dissipation leads 1130 and the semiconductor chip 160.

In addition, the adhesive member 1140 may be formed to include a part of the attachment tape 165.

Protruding surfaces of the outer heat dissipation leads 1135 protruding to the outside of the encapsulant 150 among the heat dissipation leads 1130 formed as described above may contact the heat dissipation member 1190. Accordingly, heat inside the semiconductor chip package 100 may be discharged to the outside through the heat dissipation leads 1130. Accordingly, heat inside the semiconductor chip package 100 may be discharged to the outside through the heat dissipation leads 1130.

Therefore, the average temperature of the semiconductor chip package 100 may be lowered. And it is possible to improve the characteristics such as the refresh characteristics, operating speed characteristics, product life of the semiconductor product having the semiconductor chip package 100.

The present invention is not limited to the above-described embodiments and can be modified in various other forms within the spirit of the present invention. For example, the present invention can be applied to a semiconductor device and a manufacturing method thereof.

1A and 1B are plan views illustrating a semiconductor chip package according to a first embodiment of the present invention.

1C and 1D are plan views illustrating an embodiment in which the arrangement of the dummy leads and the heat dissipation leads according to the first embodiment of the present invention is modified.

FIG. 2A is a cross-sectional view taken along line II ′ of FIG. 1B.

FIG. 2B is a cross-sectional view taken along line II-II ′ of FIG. 1B.

2C is a cross-sectional view taken along the line AA ′ of FIG. 1D.

3A and 3B are plan views illustrating a semiconductor chip package according to a second embodiment of the present invention.

4A is a cross-sectional view taken along line III-III 'of FIG. 3B.

4B is a cross-sectional view taken along line IV-IV 'of FIG. 3B.

5A and 5B are plan views illustrating a semiconductor chip package according to a third embodiment of the present invention.

FIG. 6A is a cross-sectional view taken along line VV ′ of FIG. 5B.

6B is a plan view illustrating an embodiment in which the arrangement of the dummy leads and the connection leads is changed in the third embodiment of the present invention.

7A and 7B are plan views of a semiconductor chip package according to a fourth embodiment of the present invention.

8A is a cross-sectional view taken along VII-VII ′ of FIG. 7B.

8B is a cross-sectional view taken along line VIII-VIII ′ according to FIG. 7B.

9A and 9B are plan views of a semiconductor chip package according to a fifth embodiment of the present invention.

10 is a cross-sectional view taken along line IX-IX 'of FIG. 9B.

11A and 11B are plan views of a semiconductor chip package according to a sixth embodiment of the present invention.

12A is a cross-sectional view taken along the line XI-XI ′ in FIG. 11B.

FIG. 12B is a cross-sectional view taken along line XII-XII ′ of FIG. 11B.

** Description of the symbols for the main parts of the drawings **

110, 310, 510, 710, 910, 1110: connecting leads

120, 320, 520, 720, 920, 1120: dummy leads

130, 330, 530, 730, 930, 1130: heat dissipation leads

140, 340, 540, 740, 940, 1140: adhesive member

190, 390, 590, 790, 990, 1190: heat dissipation member

150: encapsulant 160: semiconductor chip

165: adhesive tape 170: wire bonding

Claims (10)

Semiconductor chip; An encapsulation material covering the semiconductor chip; A heat dissipation member adjacent to the encapsulant; And And heat dissipation leads formed through the encapsulant, wherein one end of the heat dissipation leads is in contact with the heat dissipation member, and the other ends of the heat dissipation leads are formed adjacent to the semiconductor chip. The method of claim 1, And a lead frame having leads penetrating the encapsulant, wherein the lead frame is attached to the semiconductor chip, and the leads have connection leads connected to the semiconductor chip and dummy leads insulated from the semiconductor chip. And inner leads protruding to the outside of the encapsulation material, and inner leads extending from the outer leads and disposed in the encapsulation material. 3. The method of claim 2, The heat dissipation leads Disposed on the dummy leads, Disposed on the connecting leads; Respectively disposed on the dummy leads and the connection leads; Disposed between the dummy leads, Disposed between the connecting leads; Disposed between the dummy leads and the connection leads, and The semiconductor chip package of claim 1, wherein the semiconductor chip package is disposed in a group of regions selected from the dummy leads and the connection leads. 3. The method of claim 2, The heat dissipation leads And external heat dissipation leads penetrating the encapsulant to be disposed externally, and inner heat dissipation leads extending to the outer heat dissipation lead and disposed adjacent to the semiconductor chip inside the encapsulation material. The method of claim 4, wherein The inner heat dissipation leads are disposed on the inner lead in the encapsulant or adjacent to the inner leads, and are formed at a predetermined height in the direction of the heat dissipation member. The semiconductor chip package is formed in the direction of the heat radiating member penetrating through the encapsulant. 3. The method of claim 2, The heat dissipation leads are formed along the surface direction of the leads, the heat dissipation leads are bent in the direction of the heat dissipation member semiconductor chip package. The method of claim 4, wherein The semiconductor chip package is disposed between the heat dissipation member and the encapsulant. 3. The method of claim 2, And a connection area for connecting the semiconductor chip and the leads to ends of the leads adjacent to the semiconductor chip. The method of claim 4, wherein The semiconductor chip package further comprises an adhesive member under the inner heat shield. The method of claim 9, The adhesive member is a semiconductor chip package formed of any one of a non-conductive tape and epoxy having a heat transfer characteristic.

Images