KR20100034159A - Phosphor and light emitting device - Google Patents

Abstract

PURPOSE: A phosphor is provided to ensure high color rendering index, and to be used as a back light for a color LCD of a mobile telephone, LED lamp, a light source replacing LED for displaying train and bus or a fluorescent lamp. CONSTITUTION: A phosphor has a composition represented by chemical formula: (4-x-y-z)SrO·xBaO·zCaO·aMgO·2(SiO2)·bM2O3 : yEu cDy, wherein M is metal selected from the group consisting of Y, Ce and La; and 0<x<=3.95, 0<y<=1, 0<=z<3.95, x+y+z<4, 0<a<2, 0<b<1 and 0<c<1.

Description

Phosphor and Light Emitting Device {PHOSPHOR AND LIGHT EMITTING DEVICE}

The present invention relates to a phosphor and a light emitting device.

Recently, the manufacturing method of gallium nitride (GaN) -based white light emitting diodes (LEDs), which have been actively promoted around the world, turns white, blue, green, and red LED chips simultaneously and adjusts the brightness of LEDs to display white color due to variable mixing. There is a method and a method of simultaneously lighting by adjusting the brightness of the blue, yellow or orange LED chip.

However, the two multi-chip type white light emitting diode manufacturing methods have problems such as unevenness of operating voltages for each chip and color coordinates of the chips due to changes in output of each chip according to ambient temperature.

Alternatively, there is a method of manufacturing a white light emitting diode by applying a phosphor on a blue or near violet (UV) LED chip.

The method of manufacturing the white light emitting diode by applying the phosphor is simpler and more economical than the method of manufacturing the white light emitting diode of the multi-chip type, and uses a blue, green, and red phosphor to emit light of a desired color through three-color variable mixing. Can be prepared more simply.

However, since the method of applying the phosphor changes the primary light generated from the light emitting device into the secondary light using the phosphor, the light source using the phosphor has a brightness and a correlated color temperature depending on the performance and application method of the phosphor. (CCT: Correlated Color Temperature) and CRI: Color Rendering Index (CRI) are different.

Most of the white light emitting diodes currently used are manufactured according to a combination of (In) GaN LEDs emitting blue light at a wavelength of about 460 nm and Yttrium Aluminum Garnet (YAG): Ce ³⁺ phosphors emitting yellow light.

However, the conventional YAG: Ce ³⁺ phosphor and the light emitting device including the same have a disadvantage that the half width is not wide enough to cover the entire visible light region and thus is not suitable for lighting devices in which the color rendering index is important.

The embodiment provides a phosphor and a light emitting device including the same.

The embodiment provides a phosphor having a higher color rendering index and a light emitting device including the same.

The embodiment provides a light emitting device capable of emitting white light.

Phosphor according to an embodiment of the present invention is a formula of (4-xyz) SrO.xBaO.zCaO.aMgO.2 (SiO ₂ ) bM ₂ O ₃ : yEu cDy (wherein M is Y, Ce, and La). At least one metal selected from the group consisting of 0 <x≤3.95, 0 <y≤1, 0≤z <3.95, x + y + z <4, 0 <a <2, 0 <b <1 and 0 < c <1).

Phosphor according to an embodiment of the present invention is (4-xyz) SrO.xBaO.zCaO.aMgO.2 (SiO ₂ ) .bM ₂ O ₃ : The first phosphor represented by the chemical formula of yEu cDy (wherein M is At least one metal selected from the group consisting of Y, Ce, and La, and 0 <x ≦ 3.95, 0 <y ≦ 1, 0 ≦ z <3.95, x + y + z <4, 0 <a <2, 0 < b <1 and 0 <c <1) and the nitride-based second phosphor.

A light emitting device according to an embodiment of the present invention includes a light emitting diode chip for emitting light having an emission peak in the wavelength range of 380nm to 500nm; A substrate supporting and electrically connecting the light emitting diode chip; A molding member molding the light emitting diode chip; And at least (4-xyz) SrO.xBaO.zCaO.aMgO.2 (SiO ₂ ) .bM ₂ O ₃ : a phosphor represented by the chemical formula of yEu cDy, provided that M is in the group consisting of Y, Ce, and La. At least one metal selected, 0 <x ≦ 3.95, 0 <y ≦ 1, 0 ≦ z <3.95, x + y + z <4, 0 <a <2, 0 <b <1 and 0 <c <1 Is included).

A light emitting device according to an embodiment of the present invention includes a light emitting diode chip for emitting light having an emission peak in the wavelength range of 380nm to 500nm; A substrate supporting and electrically connecting the light emitting diode chip; A molding member molding the light emitting diode chip; And at least (4-xyz) SrO.xBaO.zCaO.aMgO.2 (SiO ₂ ) bM ₂ O ₃ : a first phosphor represented by the chemical formula of yEu cDy, wherein M is composed of Y, Ce, and La. At least one metal selected from the group, 0 <x ≦ 3.95, 0 <y ≦ 1, 0 ≦ z <3.95, x + y + z <4, 0 <a <2, 0 <b <1 and 0 <c <1.) And a nitride-based second phosphor.

The embodiment can provide a phosphor and a light emitting device including the same.

The embodiment can provide a phosphor having a higher color rendering index and a light emitting device including the same.

The embodiment can provide a light emitting device capable of emitting white light.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

1 is a view illustrating a structure of a light emitting device.

Referring to FIG. 1, the light emitting device supports an InGaN-based light emitting diode chip 110 that emits light having an emission peak in a wavelength range of 380 nm to 500 nm, the light emitting diode chip 110, and supports the light emitting diode chip ( The substrate 120 reflects the light emitted from the 110 in an upward direction, two electrically insulated lead frames 130 that provide power to the light emitting diode chip 110, and the light emitting diode chip 110. And a wire 140 electrically connecting the two lead frames 130, a molding member 150 formed of a colorless or colored light transmitting resin molding the light emitting diode chip 110, and the molding member ( 150 includes phosphors 151 dispersed in whole or in part.

2 is a diagram illustrating another structure of the light emitting device.

Referring to FIG. 2, the light emitting device supports an InGaN-based light emitting diode chip 110 that emits light having an emission peak in a wavelength range of 380 nm to 500 nm, the light emitting diode chip 110, and the light emitting diode chip ( The substrate 120 reflects the light emitted from the 110 in an upward direction, two electrically insulated electrode layers 131 for supplying power to the light emitting diode chip 110, and the light emitting diode chip 110. A wire 140 electrically connecting the electrode layer 131, a molding member 150 formed of a colorless or colored light transmitting resin molding the light emitting diode chip 110, and an entirety of the molding member 150. Or a phosphor 151 that is partially dispersed.

In the light emitting device shown in FIG. 2, one wire 140 electrically connects the light emitting diode chip 110 and one electrode layer 131. The light emitting diode chip 110 is directly and electrically connected to the other electrode layer 131 by being mounted.

1 and 2, the light emitting device includes a light emitting diode chip 110 provided with power and a phosphor 151 surrounding the light emitting diode chip 110, wherein the light emitting diode chip ( Light emitted from 110 is excited by the phosphor 151 to generate secondary light.

That is, the light emitting device according to the embodiment of the present invention includes a light source for emitting light, a substrate supporting the light source, and a molding member molded around the light source.

The molding member may be a light transmitting resin, and at least one of an epoxy resin, a silicone resin, a urea resin, and an acrylic resin may be used. In addition, the molding member may be formed in a single structure or multiple structures, and the phosphor 151 may include a first phosphor to be described later or a mixed phosphor in which the first phosphor and the second phosphor are mixed.

In addition, the present invention provides a coating phosphor composition for a light emitting device comprising the phosphor 151 and a transparent resin. In the phosphor composition, the phosphor 151 and the transparent resin may be mixed in a weight ratio of 1: 2 to 1:10.

In addition, the present invention provides a coating phosphor composition including a phosphor and a transparent resin in which the first phosphor and the second phosphor are mixed. The transparent resin may be at least one of a transparent epoxy resin, a silicone resin, urea resin, acrylic resin.

The light emitting device is an illumination unit that emits secondary light by using a light source that emits primary light in the light emitting diode chip 110 as an energy source.

For example, the light emitting diode chip 110 emits blue light as primary light, and the phosphor 151 is excited by blue light emitted from the light emitting diode chip 110 to emit secondary light.

Fabrication of light-emitting device using silicate-based first phosphor, method for manufacturing first phosphor and first phosphor

First phosphor

In FIG. 1 and FIG. 2, the first phosphor may be used as the phosphor 151 surrounding the light emitting diode chip 110.

The first phosphor is a silicate-based phosphor represented by the following formula (1).

[Formula 1]

(4-xyz) SrO · xBaO · zCaO · aMgO · 2 (SiO 2) · bM 2 O 3: yEu cDy

In Formula 1, M is at least one metal selected from the group consisting of Y, Ce, and La, and 0 <x ≦ 3.95, 0 <y ≦ 1, 0 ≦ z <3.95, x + y + z <4, 0 < a <2, 0 <b <1, and 0 <c <1.

Therefore, the first phosphor may be expressed as follows.

(4-xyz) SrO.xBaO.zCaO.aMgO.2 (SiO ₂ ) bY ₂ O ₃ : yEu cDy,

(4-xyz) SrO.xBaO.zCaO.aMgO.2 (SiO ₂ ) bCe ₂ O ₃ : yEu cDy,

(4-xyz) SrO.xBaO.zCaO.aMgO.2 (SiO ₂ ) bLa ₂ O ₃ : yEu cDy.

In Chemical Formula 1, the first phosphor is excited by primary light having an emission peak in a wavelength range of 380 nm to 500 nm so that the secondary light has an emission peak in a wavelength range of 540 nm to 600 nm.

The first phosphor includes Mg, contains at least one or more selected from the group consisting of Y, Ce, and La, and includes Eu and Dy as an activator, thereby having superior performance to conventional YAG: Ce ³⁺ phosphors. Can be provided.

Manufacturing method of the first phosphor

The first phosphor is manufactured by including the following process.

The process of manufacturing the first phosphor

(a) oxides, nitrides or carbonates of alkaline earth metals, SiO _2, oxides, nitrides or halides of rare earth metals, oxides or halides of Eu, Dy as activators, NH ₄ F, BaF ₂ , CaF ₂ , or as flux Mixing in MgF ₂ solvent,

(b) drying the mixture at 50-150 ° C. for 3 minutes to 24 hours,

(c) heat-treating the dried material under a reducing atmosphere at 800-1500 ° C. for 1 to 48 hours;

(d) pulverizing and classifying the obtained first phosphor to obtain phosphor powder having a constant size; And

(e) washing the first phosphor powder with a solvent to remove unreacted material.

The amount of each substance used in the step (a) may be appropriately adjusted by stoichiometric ratio to satisfy the condition of Chemical Formula 1.

The reduction reaction temperature in the step (c) is at least a temperature sufficient to complete the reaction. If the heat treatment temperature is less than 800 ° C. under a reducing atmosphere, crystals of the first phosphor may not be completely produced, and thus the luminous efficiency may be reduced. Problems may arise. In addition, as the reducing gas, nitrogen gas containing 2-25% by volume of hydrogen may be used for the reducing atmosphere.

The first phosphor obtained in the step (d) is agglomerated due to the high heat treatment temperature, so that a pulverization and classification process is required to obtain a powder having a desired brightness and size.

In the step (e), the unreacted substance is removed by using at least one polymer solvent in which an unreacted substance such as alcohol, acetone or a polymer solvent is dissolved. The washing method may be a method in which the first phosphor is added to the above-mentioned solvent and mixed and then dried, but is not particularly limited thereto. In addition, the step (e) of removing the unreacted material may be performed first, followed by the step (d) of grinding and classifying the first phosphor.

The first phosphor obtained by heat treatment in a reducing atmosphere contains a trace amount of a halogen compound. If the halogen compound is not removed, there is a problem that the moisture resistance tends to be poor when the light emitting device is manufactured using the first phosphor.

Specific example of the first phosphor manufacturing method

1.13 g SrCO ₃ , 0.41 g BaCO ₃ , 0.05 g MgO, 0.31 g SiO ₂ , 0.23 g Eu ₂ O _3, 0.05 g Y ₂ O ₃ , and 0.05 g Dy ₂ O ₃ in acetone It put and mixed for 1 hour using the ball mill. The mixture was placed in a 100 ° C. drier and dried for 12 hours to completely volatilize the solvent. The mixed materials were placed in an alumina crucible and heat treated at 1300 ° C. for 5 hours. At this time, sintered while flowing nitrogen mixed gas mixed with 15% by volume of 300cc / min. After the heat treatment was completed, the first phosphor was pulverized, and a phosphor having an easy-to-use size was classified into a light emitting device using 20 μm powder. The classified first phosphor is unreacted, so it is placed in a mixture of ethyl alcohol and acetone in a ratio of 1: 1 and sonicated for 30 minutes, followed by drying (4-xyz) SrO.xBaO.zCaO.aMgO. 2 (SiO ₂ ) bM ₂ O ₃ : yEu cDy (wherein x = 0.63, y = 0.04, z = 0, a = 0.7, b = 0.2, c = 0.1 and M = Y) An alkaline earth silicate-based yellow phosphor having a chemical formula of was prepared.

Example of Manufacturing Light-Emitting Element Using First Phosphor

1 and 2, (4-xyz) SrO.xBaO.zCaO.aMgO.2 (SiO ₂ ) bM ₂ O ₃ : yEu cDy (wherein, x = 0.63 and y = 0.04). , z = 0, a = 0.7, b = 0.2, c = 0.1 and M = Y.) InGaN based light emitting diode chip 110 having an emission peak in a wavelength range of 380 nm to 500 nm. ) To produce a light emitting device.

Specifically, the phosphor 151 is mixed with the molding member 150 made of a light transmitting epoxy resin to form the light emitting diode chip 110 to surround the light emitting diode chip 110.

The phosphor 151 emits secondary light having a center wavelength of 540-600 nm excited by blue light (460 nm) generated from the light emitting diode chip 110.

3 is a conventional silicate system FIG. 4 is a view illustrating comparison of an excitation spectrum of a phosphor and a first phosphor of the present invention, and FIG. 4 shows a comparison of an emission spectrum of a conventional silicate-based phosphor and a first phosphor of the present invention. Drawing.

3 and 4, it can be seen that the first phosphor of the present invention has excitation characteristics and luminescence characteristics different from those of the conventional silicate-based phosphors. It can be seen that a strong central wavelength is emitted at a wavelength in the range of -600 nm (especially 570 nm).

Accordingly, white light having high efficiency may be generated by using light in the 460 nm band generated in the light emitting diode chip 110 and light in the 570 nm band excited by the first phosphor.

Fabrication of Light-Emitting Element Using Nitride-Based Second Phosphor, Method of Manufacturing Second Phosphor, and Phosphor Mixed with First Phosphor and Second Phosphor

First phosphor

The first phosphor and the method for producing the first phosphor are the same as described above.

Second phosphor

The second phosphor is a nitride phosphor represented by the following formula (5) or (6).

[Chemical Formula 5]

(2-abcd) SrN-aMgN-bCaN-cBaN (Si ₅ N ₈ ): dEu

In Formula 5, 0 ≦ a <2, 0 ≦ b <2, 0 ≦ c <2, 0 <d ≦ 1, and a + b + c + d <2.

[Formula 6]

(3-abcd) CaN, aMgN, bSrN, cBaN, 3 (XN), (Z ₃ N ₄ ): dEu

In Formula 6, X is an element selected from one or more selected from the group consisting of Al and Ga, Z = Si, Ge is an element selected from one or more selected from the group consisting of, 0≤a <3, 0≤b <3, 0≤ c <3, 0 <d ≦ 1 and a + b + c + d <3.

Therefore, the second phosphor of Chemical Formula 6 may be expressed as follows.

(3-abcd) CaN.aMgN.bSrN.cBaN.3 (AlN). (Si ₃ N ₄ ): dEu.

(3-abcd) CaN.aMgN.bSrN.cBaN.3 (AlN). (Ge ₃ N ₄ ): dEu

(3-abcd) CaN.aMgN.bSrN.cBaN. 3 (GaN) .Si ₃ N ₄ : dEu.

(3-abcd) CaN.aMgN.bSrN.cBaN.3 (GaN). (Ge ₃ N ₄ ): dEu

Manufacturing method of the second phosphor

The second phosphor is manufactured by the following process.

The process of preparing the second phosphor is (a) mixing a nitride or carbonate of an alkaline earth metal, a nitride of a trivalent cation, a nitride of a tetravalent cation, an oxide of Eu or a halide as an activator using acetone,

(b) drying the mixture at 50-150 ° C. for 3 minutes to 24 hours,

(c) heat-treating the dried material at 1400-1700 ° C. under a mixed gas atmosphere mixed with hydrogen and nitrogen for 1 hour to 48 hours, and

(d) pulverizing and classifying the obtained second phosphor to obtain phosphor powder having a constant size, and

(e) washing the second phosphor powder with a solvent to remove unreacted material.

Specific Example 1 of the Second Phosphor Manufacturing Method

1.59 g of Sr (NO 3) 2, 0.10 g of Ca ₃ N ₂ , 1.16 g of Si ₃ N ₄ and 0.04 g of Eu ₂ O ₃ were mixed using a mortar using a mortar. The mixture was placed in an 80 ° C. drier and dried for 3 hours to completely volatilize the solvent. The mixed materials were placed in an alumina crucible and heat treated at 1650 ° C. for 6 hours. At this time, the mixture was sintered while flowing nitrogen mixed gas mixed with 25% of 500cc / min. After pulverizing the phosphor after heat treatment and classifying a phosphor having an easy-to-use size in a device using 20 μm powder, (2-abcd) SrN · aMgN · bCaN · cBaN · (Si ₅ N ₈ ): dEu In which a = 0, b = 0.45, c = 0, and d = 0.05).

Specific Example 2 of the Second Phosphor Manufacturing Method

0.47 g Ca ₃ N ₂ , 0.40 g AlN, 0.46 g Si ₃ N ₄ and 0.05 g Eu ₂ O ₃ were mixed using a mortar using a mortar. The mixture was placed in an 80 ° C. drier and dried for 3 hours to completely volatilize the solvent. The mixed materials were placed in an alumina crucible and heat treated at 1500 ° C. for 6 hours. At this time, the mixture was sintered while flowing nitrogen mixed gas mixed with 25% of 500cc / min. After the heat treatment is completed, the phosphor is pulverized and a second phosphor having an easy-to-use size is classified by using 20 μm powder, and then (3-abcd) CaN, aMgN, bSrN, cBaN, 3 (XN), (Z ₃ N ₄ ) : A nitride-based phosphor having a chemical formula of dEu (wherein a = 0, b = 0, c = 0, d = 0.03 and X = Al, Z = Si in the above formula) was prepared.

Luminescence Characteristics of Second Phosphor

5 is a diagram illustrating an emission spectrum of a light emitting device including a nitride-based second phosphor.

The nitride-based second phosphor prepared by Specific Example 1 of the above-described second phosphor manufacturing method and Specific Example 2 of the second phosphor manufacturing method has almost the same luminescence properties. In Fig. 5, the chemical formula of (2-abcd) SrN.aMgN.bCaN.cBaN. (Si ₅ N ₈ ): dEu (wherein a = 0, b = 0.45, c = 0, and d = 0.05 in the above chemical formula). The emission spectrum of the light emitting device including the nitride-based phosphor having a is shown.

As shown in FIG. 5, the second phosphor emits light having a center wavelength of 550-700 nm of secondary light excited by blue light (460 nm) generated from the light emitting diode chip.

Example of phosphor mixed with first phosphor and second phosphor

In the phosphor in which the first phosphor and the second phosphor are mixed, the first phosphor and the second phosphor may be mixed in a weight ratio of 1: 1 to 1: 9 or 9: 1 to 1: 1.

(4-xyz) SrO.xBaO.zCaO.aMgO.2 (SiO ₂ ) .bM ₂ O ₃ : yEu cDy prepared by the above-described first phosphor manufacturing method, wherein x = 0.63, y = 0.04, z = 0, a = 0.7, b = 0.2, c = 0.1 and M = Y.), and (2-abcd) SrN.aMgN.bCaN.cBaN. (Si ₅ N ₈ ) : A second phosphor having a chemical formula of dEu (wherein a = 0, b = 0.45, c = 0, and d = 0.05) was mixed at a weight ratio of 1: 1.

Example of Fabrication of Light-Emitting Element Using Phosphor Mixed with First and Second Phosphors

1 and 2, an InGaN-based light emitting diode chip having an emission peak in a wavelength range of 380 nm to 500 nm is mixed with the phosphor 151 including the first phosphor and the second phosphor in a weight ratio of 1: 1. 110) to manufacture a light emitting device.

Specifically, the phosphor 151 is mixed with the molding member 150 made of a light transmitting resin to form the light emitting diode chip 110.

The phosphor 151 emits light having a center wavelength of 540-600 nm and 550-700 nm of secondary light excited by blue light (460 nm) generated from the LED chip 110.

FIG. 6 is a diagram illustrating a result of measuring an emission spectrum of a light emitting device manufactured by using a phosphor in which the first phosphor and the second phosphor are mixed.

The light emitting device manufactured by using the phosphor mixed with the first phosphor and the second phosphor and an InGaN-based light emitting diode chip having an emission peak in a wavelength range of 380 nm to 500 nm emit white light as shown in FIG. 6. do.

In FIG. 6, it can be seen that the first phosphor and the second phosphor emit strong secondary light at 560-580 nm and 630-670 nm.

As described above, in the present invention, the optical properties of the new phosphor include Mg, include at least one of Y, Ce, and La, and include Eu and Dy as an active agent. Provides better performance than phosphors.

In particular, the phosphor according to the embodiment of the present invention exhibits a high color rendering index, thereby providing practicality that can be used as an illumination light source replacing color LED backlights, LED lamps, in-vehicle display LEDs and fluorescent lamps of mobile phones. .

Although described above with reference to the embodiment is only an example and is not intended to limit the invention, those of ordinary skill in the art to which the present invention does not exemplify the above within the scope not departing from the essential characteristics of this embodiment It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

1 is a diagram illustrating a structure of a light emitting device.

2 is a diagram illustrating another structure of the light emitting device.

3 is a conventional silicate system A diagram showing a comparison of the excitation spectrum of the phosphor and the first phosphor of the present invention.

4 is a view showing a comparison of the emission spectrum of the conventional silicate-based phosphor and the first phosphor of the present invention.

5 is a diagram illustrating an emission spectrum of a light emitting device including a nitride-based second phosphor.

6 is a view showing a result of measuring an emission spectrum of a light emitting device manufactured using a phosphor in which the first phosphor and the second phosphor are mixed.

Claims (10)

(4-xyz) SrO.xBaO.zCaO.aMgO.2 (SiO ₂ ) .bM ₂ O ₃ : A phosphor represented by the chemical formula of yEu cDy. (Wherein, M is at least one metal selected from the group consisting of Y, Ce and La, and 0 <x≤3.95, 0 <y≤1, 0≤z <3.95, x + y + z <4, 0 <A <2, 0 <b <1 and 0 <c <1.) (4-xyz) SrO.xBaO.zCaO.aMgO.2 (SiO ₂ ) .bM ₂ O ₃ : a first phosphor represented by the chemical formula of yEu cDy, where M is Y, Ce, and La At least one metal selected, 0 <x ≦ 3.95, 0 <y ≦ 1, 0 ≦ z <3.95, x + y + z <4, 0 <a <2, 0 <b <1 and 0 <c <1 And, Phosphor containing a nitride-based second phosphor. 3. The method of claim 2, The second phosphor is excited by blue light having a center wavelength in the range of 380-500 nm to emit secondary light having a center wavelength of 550-700 nm. 3. The method of claim 2, The second phosphor is (2-abcd) SrN.aMgN.bCaN.cBaN. (Si ₅ N ₈ ): a chemical formula of dEu (where 0 ≦ a <2, 0 ≦ b <2, 0 ≦ c <2 , 0 <d ≦ 1 and a + b + c + d <2. 3. The method of claim 2, The second phosphor is (3-abcd) CaN.aMgN.bSrN.cBaN.3 (XN). (Z ₃ N ₄ ): a chemical formula of dEu (where X is one or more from the group consisting of Al and Ga) Is an element selected and is one or more selected from the group consisting of Z = Si, Ge, and 0 ≦ a <3, 0 ≦ b <3, 0 ≦ c <3, 0 <d ≦ 1 and a + b + c + d <3.). A light emitting diode chip emitting light having an emission peak in a wavelength range of 380 nm to 500 nm; A substrate supporting and electrically connecting the light emitting diode chip; A molding member molding the light emitting diode chip; And At least (4-xyz) SrO.xBaO.zCaO.aMgO.2 (SiO ₂ ) .bM ₂ O ₃ : a phosphor represented by the chemical formula of yEu cDy, wherein M is selected from the group consisting of Y, Ce, and La. 1 or more metals, 0 <x≤3.95, 0 <y≤1, 0≤z <3.95, x + y + z <4, 0 <a <2, 0 <b <1 and 0 <c <1 Light emitting element comprising. A light emitting diode chip emitting light having an emission peak in a wavelength range of 380 nm to 500 nm; A substrate supporting and electrically connecting the light emitting diode chip; A molding member molding the light emitting diode chip; And At least (4-xyz) SrO.xBaO.zCaO.aMgO.2 (SiO ₂ ) .bM ₂ O ₃ : a first phosphor represented by the chemical formula of yEu cDy, wherein M is a group consisting of Y, Ce, and La. At least one metal selected from 0 <x≤3.95, 0 <y≤1, 0≤z <3.95, x + y + z <4, 0 <a <2, 0 <b <1 and 0 <c < 1) and a nitride-based second phosphor. The method of claim 7, wherein The second phosphor is excited by the light emitted from the light emitting diode chip to emit a secondary light having a center wavelength of 550-700nm. The method of claim 7, wherein The second phosphor is (2-abcd) SrN.aMgN.bCaN.cBaN. (Si ₅ N ₈ ): a chemical formula of dEu (where 0 ≦ a <2, 0 ≦ b <2, 0 ≦ c <2 , 0 <d ≦ 1 and a + b + c + d <2. The method of claim 7, wherein The second phosphor is (3-abcd) CaN.aMgN.bSrN.cBaN.3 (XN). (Z ₃ N ₄ ): a chemical formula of dEu (where X is one or more from the group consisting of Al and Ga) Is an element selected and is one or more selected from the group consisting of Z = Si, Ge, and 0 ≦ a <3, 0 ≦ b <3, 0 ≦ c <3, 0 <d ≦ 1 and a + b + c + d <3.).

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