KR20100028205A - Method for fabrication of semiconductor capable of preventing pattern collapse - Google Patents

Method for fabrication of semiconductor capable of preventing pattern collapse Download PDF

Info

Publication number
KR20100028205A
KR20100028205A KR1020080087128A KR20080087128A KR20100028205A KR 20100028205 A KR20100028205 A KR 20100028205A KR 1020080087128 A KR1020080087128 A KR 1020080087128A KR 20080087128 A KR20080087128 A KR 20080087128A KR 20100028205 A KR20100028205 A KR 20100028205A
Authority
KR
South Korea
Prior art keywords
wafer
pattern
collapse
photoresist
developing
Prior art date
Application number
KR1020080087128A
Other languages
Korean (ko)
Inventor
전영두
Original Assignee
주식회사 동부하이텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 동부하이텍 filed Critical 주식회사 동부하이텍
Priority to KR1020080087128A priority Critical patent/KR20100028205A/en
Publication of KR20100028205A publication Critical patent/KR20100028205A/en

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3042—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations
    • G03F7/3057—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations characterised by the processing units other than the developing unit, e.g. washing units
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Abstract

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a pattern from collapsing after a photo-resistor is developed by keeping a constant temperature in a developing chamber. CONSTITUTION: A photo-resist is applied on a wafer(100). The photo-resist is exposed through a reticle pattern. The exposed photo-resist is developed in a developing chamber(600) with a constant temperature by applying a developing solution. The developing solution is removed by rotating a wafer. The wafer is rinsed with an ultrahigh purity of de-ionized water. The de-ionized water is removed by rotating the rinsed wafer.

Description

패턴의 무너짐을 방지할 수 있는 반도체 소자 제조방법{Method for fabrication of semiconductor capable of preventing pattern collapse}Method for fabrication of semiconductor capable of preventing pattern collapse}

본 발명은 반도체 소자 제조방법에 관한 것으로서, 더욱 상세하게는 패턴의 무너짐(Pattern Collapse) 현상이 일어나는 대부분의 경우는, 모세관력(Capillary force)에 의한 현상이 대부분이며, 이를 해결하기 위해 기존의 방식 대비 웨이퍼 회전시 회전수(RPM)을 낮춤과 동시에 짧은 시간에 고온에서 처리를 하여 패턴의 무너짐을 막는데 있도록 하는 패턴의 무너짐을 방지할 수 있는 반도체 소자 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly, in most cases in which a pattern collapse occurs, a phenomenon due to capillary force is mostly used. The present invention relates to a method of manufacturing a semiconductor device capable of preventing the collapse of a pattern to prevent the collapse of the pattern by treating the wafer at a high temperature in a short time and at the same time lowering the rotational speed (RPM) during the wafer rotation.

리소그래픽공정은 실리콘 웨이퍼상에 포토레지스트를 도포하고 마스크 패턴을 이용하여 웨이퍼에 상기 패턴을 복사하기 위한 노광공정을 수행한다. 이후 패턴을 형성하기 위하여 포토레지스트의 용해영역을 녹이기 위하여 액체 화학 현상액을 사용하여 현상하는 공정을 거친 후 상기 화학 현상액은 중성화된 물(DI water)에 제거되고, 스핀공정을 통하여 건조된다. The lithographic process applies a photoresist on a silicon wafer and performs an exposure process for copying the pattern onto the wafer using a mask pattern. After the process of developing using a liquid chemical developer to dissolve the dissolving region of the photoresist to form a pattern, the chemical developer is removed in neutralized water (DI water) and dried through a spin process.

도 1은 웨이퍼 회전전의 패턴이 현상된 상태를 나타낸 개략도이다. 기판(100)상에 포토레지스트를 도포하고 노광 후 현상(Develop)공정에 의하여 패턴화 된 포토레지스트(200) 사이에 현상용액(300)이 존재한다. 이 상태에서 현상용액을 웨이퍼로부터 분리하기 위해 웨이퍼를 고 회전수로 회전시킨다. 0.13um공정 진행시 3000~3500 회전수(RPM)를 사용하고 있다.1 is a schematic view showing a state in which a pattern before wafer rotation is developed. The developing solution 300 is present between the photoresist 200 coated with the photoresist on the substrate 100 and patterned by a post-exposure development process. In this state, the wafer is rotated at high rotational speed to separate the developer solution from the wafer. 3000 ~ 3500 RPM (RPM) is used in 0.13um process.

도 2는 웨이퍼 회전시의 패턴의 무너짐을 나타낸 개략도이다. 웨이퍼 회전시 포토레지스트(200) 사이에 있는 현상용액(300)이 빠져나가면서 포토레지스트(200)들이 원래 현상용액(300)이 존재하던 곳으로 쓰러지게 된다. 이렇게 쓰러지는 것은 모세관력때문이며, 모세관력의 원인은 웨이퍼를 회전시키는 원심력으로부터 오게 된다. 2 is a schematic view showing the collapse of a pattern during wafer rotation. When the wafer rotates, the developing solution 300 between the photoresist 200 exits and the photoresist 200 falls to the place where the original developing solution 300 existed. This collapse is due to capillary force, which is caused by the centrifugal force that rotates the wafer.

웨이퍼를 고속으로 회전시키면 시킬수록 패턴의 무너짐 현상은 더욱 나타나게 되는 것이다. 물론 기판(100)과 포토레지스트간(200)의 접착력(adhesion)이 패턴의 무너짐의 원인이 될 수도 있으나, 대부분의 현상은 모세관력으로부터 발생된다. The more the wafer is rotated at high speed, the more the pattern collapses. Of course, the adhesion between the substrate 100 and the photoresist 200 may be the cause of the collapse of the pattern, but most of the phenomenon is generated from the capillary force.

즉 패턴공정의 현상공정(Development)에서 웨이퍼를 고 회전수로 회전시켜 현상하는 경우 모세관력에 의한 패턴 무너짐 현상이 일어나는 문제점이 있다.That is, when the wafer is rotated and developed at a high rotational speed in the development process of the pattern process, there is a problem in that the pattern collapse occurs due to capillary force.

본 발명은 상기와 같은 문제점을 해결하기 위하여 안출된 것으로서, 포토레지스터의 현상 후 패턴이 무너지는 것을 방지하는 반도체 소자 제조방법을 제공함에 그 목적이 있다.The present invention has been made to solve the above problems, an object of the present invention is to provide a method for manufacturing a semiconductor device to prevent the pattern collapses after development of the photoresist.

상술한 바와 같은 목적을 구현하기 위한 본 발명의 패턴의 무너짐을 방지할 수 있는 반도체 소자 제조방법은 웨이퍼상에 포토레지스트를 도포하고 레티클 패턴에 통하여 패터닝하기 위하여 노광하는 단계; 온도가 유지되는 현상 챔버내에서 현상용액을 상기 포토레지스트 위에 도포하고 현상하는 단계; 상기 현상용액을 웨이퍼에서 제거하기 위하여 웨이퍼를 회전하는 단계; 초고순도의 중성화된 물에 의하여 웨이퍼를 헹구는 단계 및 상기 중성화된 물을 제거하기 위하여 웨이퍼를 회전하는 단계를 포함하여 이루어진 것을 특징으로 한다.A semiconductor device manufacturing method capable of preventing the collapse of the pattern of the present invention for realizing the above object comprises the steps of applying a photoresist on a wafer and patterning through a reticle pattern; Applying and developing a developing solution on the photoresist in a developing chamber where the temperature is maintained; Rotating the wafer to remove the developer solution from the wafer; And rinsing the wafer with ultra-pure neutralized water and rotating the wafer to remove the neutralized water.

본 발명에 따른 패턴의 무너짐을 방지할 수 있는 반도체 소자 제조방법에 의하면 현상용액 제거능력을 향상시킴과 동시에 패턴의 무너짐을 미연에 방지하고, 초점이 흐려지는 문제를 해결할 수 있으며, 공정여유(Process margin)을 향상시키는 장점이 있다.According to the method of manufacturing a semiconductor device which can prevent the collapse of the pattern according to the present invention, it is possible to improve the ability of removing the developing solution and prevent the collapse of the pattern in advance, and to solve the problem of blurring the focus, and process margin ) Has the advantage of improving.

이하 첨부한 도면을 참조하여 본 발명의 바람직한 실시예에 대한 구성 및 작 용을 상세히 설명하면 다음과 같다. Hereinafter, the configuration and operation of the preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

웨이퍼에 패턴을 형성하는 과정은 웨이퍼상에 포토레지스트를 도포하는 공정으로 시작하여 레티클 패턴을 정확하게 상기 도포된 포토레지스트상의 용해영역에 광화학반응을 일으키기 위하여 노출하는 공정 이후 상기 용해영역을 현상용액을 사용하여 현상하기 위하여 웨이퍼 상에 도포한다.The process of forming a pattern on the wafer begins with the process of applying photoresist on the wafer and then exposing the reticle pattern to the dissolved region on the coated photoresist to cause photochemical reactions. Apply on the wafer for development.

다음으로 현상액을 제거하기 위하여 웨이퍼를 회전시키고, 초고순도의 중성화된 물에 의하여 웨이퍼를 세척한 후 웨이퍼는 회전 건조된다.Next, the wafer is rotated to remove the developer, the wafer is washed with ultra high purity neutralized water, and then the wafer is spin-dried.

도 3은 본 발명에 따른 패턴의 무너짐을 방지할 수 있는 반도체 소자 제조방법을 나타낸 개략도이다. 도 3에서 보듯이 기판(100)이 챔버(600)안에 위치하며, 웨이퍼 척(400) 위의 플레이트(500)에 기판(100)이 고정되어 있다.3 is a schematic view showing a method of manufacturing a semiconductor device capable of preventing the collapse of the pattern according to the present invention. As shown in FIG. 3, the substrate 100 is located in the chamber 600, and the substrate 100 is fixed to the plate 500 on the wafer chuck 400.

배경기술에서의 포토레지스트 패턴의 무너짐을 방지하기 위하여 위에서 웨이퍼의 현상공정 중 현상용액과 초고순도의 중성화된 물(DI Water)을 웨이퍼 상에서 제거하기 위하여 웨이퍼를 회전시키게 된다. 종래에 3000~3500 RPM으로 웨이퍼를 회전시키던 방법과는 달리 절반 수준인 1700 ~ 2300RPM으로 낮춘다. 이는 패턴의 무너짐의 원인인 모세관력은 웨이퍼를 회전시키는 원심력에서 기인하므로 회전수를 낮추어 웨이퍼를 회전시킴으로써 패턴의 무너짐을 방지할 수 있다.  In order to prevent the photoresist pattern from collapsing in the background, the wafer is rotated to remove the developing solution and the ultra-high purity neutralized water (DI Water) from the wafer during the developing process from above. Unlike the conventional method of rotating the wafer at 3000 ~ 3500 RPM, it is lowered to 1700 ~ 2300RPM which is half level. This is because the capillary force, which is the cause of the collapse of the pattern, is caused by the centrifugal force that rotates the wafer, so that the collapse of the pattern can be prevented by rotating the wafer by lowering the rotation speed.

낮아진 회전수로 인해 현상용액 및 초고순도의 중성화된 물이 완전히 제거되지 않을 수가 있다. 따라서 챔버안의 온도를 55 ~ 65℃ 정도로 높여 현상용액 및 초고순도의 중성화된 물을 증발시킨다. 이는 현상용액 및 초고순도의 중성화된 물을 제거하기 위하여 웨이퍼를 3000~3500RPM으로 회전시켜야 하던 것과 동일한 효과 를 볼 수 있게 되는 것이다. The lower rotation speed may not completely remove the developer solution and ultra-high purity neutralized water. Therefore, the temperature in the chamber is increased to 55-65 ° C. to evaporate the developing solution and the ultra-high purity neutralized water. This is the same effect that had to rotate the wafer to 3000 ~ 3500RPM to remove the developer solution and ultra-high-purity neutralized water.

이 때 온도는 웨이퍼 척(400)의 온도를 높여 직접적으로 웨이퍼를 가열하는 방식이 아닌 챔버(600)내 공기의 온도가 55 ~ 65℃ 정도를 유지되어야 한다. 만약 웨이퍼를 직접 가열하는 방법을 이용하면 포토레지스트의 변형을 가져올 수 있기 때문이다.At this time, the temperature of the air in the chamber 600 should be maintained at about 55 to 65 ° C. rather than directly heating the wafer by raising the temperature of the wafer chuck 400. If the wafer is directly heated, the photoresist may be deformed.

이처럼 회전으로 현상용액을 제거시킴과 동시에 챔버를 이용하여 챔버 내부의 온도를 55 ~ 65℃ 정도로 유지함으로써 패턴의 무너짐(pattern collapse)을 방지하는 효과가 탁월함과 동시에 현상용액을 제거하는 효과 역시 탁월하다. In this way, by removing the developing solution by rotating and maintaining the temperature inside the chamber at about 55 ~ 65 ℃ by using the chamber, the effect of preventing the pattern collapse is excellent and the effect of removing the developing solution is also excellent. .

또한 동시 진행함에 따라서 시간 절감 효과를 얻어 생산성 향상에도 긍정적인 요소로 작용을 한다. In addition, as it progresses simultaneously, it saves time, which is a positive factor for improving productivity.

본 발명은 상기 실시예에 한정되지 않고 본 발명의 기술적 요지를 벗어나지 아니하는 범위 내에서 다양하게 수정·변형되어 실시될 수 있음은 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에 있어서 자명한 것이다.It is apparent to those skilled in the art that the present invention is not limited to the above embodiments and can be practiced in various ways without departing from the technical spirit of the present invention. will be.

도 1은 웨이퍼 회전전의 패턴이 현상된 상태를 나타낸 개략도이다.1 is a schematic view showing a state in which a pattern before wafer rotation is developed.

도 2는 웨이퍼 회전시의 패턴의 무너짐을 나타낸 개략도이다. 2 is a schematic view showing the collapse of a pattern during wafer rotation.

도 3은 본 발명에 따른 패턴의 무너짐을 방지할 수 있는 반도체 소자 제조방법을 나타낸 개략도이다.3 is a schematic view showing a method of manufacturing a semiconductor device capable of preventing the collapse of the pattern according to the present invention.

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>

100:기판 200:포토레지스트100: substrate 200: photoresist

300:현상용액 400:척(chuck)300: developing solution 400: chuck

500:플레이트(plate) 600:챔버(chamber)500: plate 600: chamber

Claims (3)

웨이퍼상에 포토레지스트를 도포하고 레티클 패턴에 통하여 패터닝하기 위하여 노광하는 단계; 온도가 유지되는 현상 챔버내에서 현상용액을 상기 포토레지스트 위에 도포하고 현상하는 단계; 상기 현상용액을 웨이퍼에서 제거하기 위하여 웨이퍼를 회전하는 단계; 초고순도의 중성화된 물에 의하여 웨이퍼를 헹구는 단계 및 상기 중성화된 물을 제거하기 위하여 웨이퍼를 회전하는 단계를 포함하여 이루어진 것을 특징으로 하는 패턴의 무너짐을 방지할 수 있는 반도체 소자 제조방법.Applying a photoresist on the wafer and exposing to pattern through the reticle pattern; Applying and developing a developing solution on the photoresist in a developing chamber where the temperature is maintained; Rotating the wafer to remove the developer solution from the wafer; And rinsing the wafer with ultra-pure neutralized water, and rotating the wafer to remove the neutralized water. 제 1항에 있어서,The method of claim 1, 상기 현상용액 및 중성화된 물을 제거하기 위하여 웨이퍼를 회전하는 단계에서 상기 웨이퍼의 회전수는 1700 ~ 2300RPM인 것을 특징으로 하는 패턴의 무너짐을 방지할 수 있는 반도체 소자 제조방법.The rotation speed of the wafer in the step of rotating the wafer to remove the developing solution and the neutralized water is a semiconductor device manufacturing method that can prevent the collapse of the pattern, characterized in that 1700 ~ 2300RPM. 제 1항에 있어서,The method of claim 1, 상기 현상용액을 제거하는 동안 챔버내의 온도는 55 ~ 65℃인 것을 특징으로 하는 패턴의 무너짐을 방지할 수 있는 반도체 소자 제조방법.During the removal of the developer solution, the temperature in the chamber is 55 ~ 65 ℃ characterized in that the semiconductor device manufacturing method that can prevent the collapse of the pattern.
KR1020080087128A 2008-09-04 2008-09-04 Method for fabrication of semiconductor capable of preventing pattern collapse KR20100028205A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020080087128A KR20100028205A (en) 2008-09-04 2008-09-04 Method for fabrication of semiconductor capable of preventing pattern collapse

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080087128A KR20100028205A (en) 2008-09-04 2008-09-04 Method for fabrication of semiconductor capable of preventing pattern collapse

Publications (1)

Publication Number Publication Date
KR20100028205A true KR20100028205A (en) 2010-03-12

Family

ID=42178940

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080087128A KR20100028205A (en) 2008-09-04 2008-09-04 Method for fabrication of semiconductor capable of preventing pattern collapse

Country Status (1)

Country Link
KR (1) KR20100028205A (en)

Similar Documents

Publication Publication Date Title
US7119025B2 (en) Methods of eliminating pattern collapse on photoresist patterns
JP2007019161A (en) Pattern forming method and coated film forming apparatus
CN109427553B (en) Semiconductor method for protecting wafer from bevel contamination
JPH088163A (en) Pattern formation method
US20170205712A1 (en) Development apparatus and method for developing photoresist layer on wafer using the same
JP2019518991A (en) Photoresist pattern reduction composition and pattern reduction method
JP3320648B2 (en) Resist film forming method and resist film forming apparatus
JP2006317774A (en) Pattern forming method
KR20100028205A (en) Method for fabrication of semiconductor capable of preventing pattern collapse
TWI515768B (en) Lithography patterning method and double patterning method
JPH07335519A (en) Formation of pattern
JP2009105248A (en) Pattern formation method
US6513996B1 (en) Integrated equipment to drain water-hexane developer for pattern collapse
JP2010278204A (en) Method for forming resist pattern
JP4322482B2 (en) Method for forming fine resist pattern and method for manufacturing semiconductor device
US7049053B2 (en) Supercritical carbon dioxide to reduce line edge roughness
TWI809440B (en) Method for reducing charges in semiconductor substrate
EP4095605B1 (en) Photoresist removal method and photoresist removal system
JP3725385B2 (en) Method for forming resist pattern
US6281130B1 (en) Method for developing ultra-thin resist films
KR100527375B1 (en) A developing method for eliminating defects in gate patterning process
JPH06338451A (en) Manufacture of semiconductor device
KR20090055775A (en) Manufacturing method of semiconductor device
JPH02177420A (en) Wafer periphery aligner
KR100641518B1 (en) Develop method of semiconductor patterning process

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application