KR20100012971A - Apparatus for cleaning wafer - Google Patents

Apparatus for cleaning wafer Download PDF

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Publication number
KR20100012971A
KR20100012971A KR1020080074430A KR20080074430A KR20100012971A KR 20100012971 A KR20100012971 A KR 20100012971A KR 1020080074430 A KR1020080074430 A KR 1020080074430A KR 20080074430 A KR20080074430 A KR 20080074430A KR 20100012971 A KR20100012971 A KR 20100012971A
Authority
KR
South Korea
Prior art keywords
cleaning liquid
cleaning
gas
pipe
wafer
Prior art date
Application number
KR1020080074430A
Other languages
Korean (ko)
Inventor
안승경
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020080074430A priority Critical patent/KR20100012971A/en
Publication of KR20100012971A publication Critical patent/KR20100012971A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/24—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means incorporating means for heating the liquid or other fluent material, e.g. electrically
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/02—Spray pistols; Apparatus for discharge
    • B05B7/12—Spray pistols; Apparatus for discharge designed to control volume of flow, e.g. with adjustable passages
    • B05B7/1254—Spray pistols; Apparatus for discharge designed to control volume of flow, e.g. with adjustable passages the controlling means being fluid actuated
    • B05B7/1263—Spray pistols; Apparatus for discharge designed to control volume of flow, e.g. with adjustable passages the controlling means being fluid actuated pneumatically actuated
    • B05B7/1272—Spray pistols; Apparatus for discharge designed to control volume of flow, e.g. with adjustable passages the controlling means being fluid actuated pneumatically actuated actuated by gas involved in spraying, i.e. exiting the nozzle, e.g. as a spraying or jet shaping gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The present invention discloses a wafer cleaning apparatus capable of increasing or maximizing production yield. Its apparatus includes a chuck for supporting a wafer; A cleaning liquid supply unit supplying a cleaning liquid for cleaning an organic material formed on a wafer surface supported on the chuck; A gas supply unit supplying a gas mixed with the cleaning liquid supplied from the cleaning liquid supply unit; By including a cavitation nozzle formed to mix and discharge the gas supply unit and the gas and the cleaning liquid supplied from the cleaning liquid supply unit to accelerate the reaction of the cleaning liquid and gas to perform an excellent cleaning process to improve the production yield Can be.

Description

Wafer cleaning device {apparatus for cleaning wafer}

The present invention relates to a wafer cleaning apparatus, and more particularly, to a wafer cleaning apparatus for removing organic substances formed on a wafer.

In general, a semiconductor manufacturing process refers to stacking a plurality of thin films patterned by a photolithography process and a deposition process. The photoresist which is essentially used in the photolithography process is cleaned with a cleaning liquid or ashed after forming the pattern. In a small wafer size, a dip method in which a plurality of wafers are introduced into a chemical tank has been mainly performed. However, in recent years, a large wafer has been cleaned by a single wafer. This is because batch washing may be more productive, but the production yield is lower than that of the sheet type. In the single wafer cleaning process, a cleaning temperature of about 120 ° C. to about 150 ° C. is required, but the cleaning process is performed at a lower temperature because the material is deformed in the semiconductor manufacturing equipment. Therefore, the reactivity of the cleaning liquid is low, there is a problem that a defect of the cleaning process occurs.

An object of the present invention is to provide a wafer cleaning apparatus that can increase the reactivity of the cleaning liquid to minimize the defect of the cleaning process.

Further, another object of the present invention is to provide a wafer cleaning apparatus capable of raising the cleaning temperature to a high temperature.

Wafer cleaning apparatus according to an aspect of the present invention for achieving the above object,

A chuck supporting the wafer;

A cleaning liquid supply unit supplying a cleaning liquid for cleaning an organic material formed on a wafer surface supported on the chuck;

A gas supply unit supplying a gas mixed with the cleaning liquid supplied from the cleaning liquid supply unit;

And a cavitation nozzle configured to mix and discharge the gas and the cleaning liquid supplied from the gas supplying portion and the cleaning liquid supplying portion.

Here, the cavitation nozzle includes a ball type nozzle in which a ball is blocked at a center at an end of a body in which a first pipe through which the cleaning liquid flows and a second pipe through which the gas flows is coupled, and the cleaning liquid flows. And a cylindrical nozzle having a plurality of cylinders blocked at an end of the body to which the pipe and the second pipe through which the gas flows are coupled, wherein the first pipe through which the cleaning liquid flows and the second pipe through which the gas flows are coupled. And a pinwheel type nozzle having a pinwheel blocked at the end of the body, and spraying the cleaning liquid and the gas by sound waves at the end of the body where the first pipe through which the cleaning liquid flows and the second pipe through which the gas flows are coupled. It is preferable to include a megasonic type nozzle.

In addition, the cavitation nozzle preferably comprises a heater for heating the cleaning liquid and the gas at the end of the body coupled to the first pipe through which the cleaning liquid flows and the second pipe through which the gas flows.

According to the exemplary embodiment of the present invention as described above, there is an effect of minimizing the defect of the cleaning process by increasing the reactivity of the cleaning liquid using the cavitation nozzle.

In addition, the heater is mounted on the body end of the cavitation nozzle to increase the temperature of the cleaning liquid to a high temperature has the effect of performing a high temperature cleaning process.

Hereinafter, a wafer cleaning apparatus according to an exemplary embodiment of the present invention will be described in detail with reference to the accompanying drawings. While many specific details are set forth in the following examples, by way of example only, in conjunction with the drawings, it is to be understood that this description is made without the intent, except as to aid a more thorough understanding of the invention to those skilled in the art. )shall. Nevertheless, it will be understood by those skilled in the art that the present invention may be practiced without these specific details. The method of evaluating the critical dimension of the pattern appearing in the known image is not described in detail in order not to obscure the subject matter of the present invention.

First, in order to more thoroughly understand the function and operation of the embodiments of the present invention described below, this will be described in more detail with reference to FIGS. 1 to 5.

1 is a diagram schematically showing a wafer cleaning apparatus according to an embodiment of the present invention.

As shown in FIG. 1, a wafer cleaning apparatus 100 according to an embodiment of the present invention mixes a cleaning liquid and a gas on a wafer 13 supported on a chuck 11 to discharge the cavitation nozzle while activating its reactivity. 40 is formed.

Although not shown, various organic substances including photoresist are formed on the wafer 13. For example, the organic material may include various kinds of polymer components generated during the semiconductor manufacturing process.

The chuck 11 supports the wafer 13 horizontally and rotates the wafer 13 clockwise or counterclockwise while washing liquid and gas injected from the cavitation nozzle 40 are applied to the front surface of the wafer 13. It can be evenly exposed. At this time, the chuck 11 is formed to be fixed in a vacuum or electrostatically to prevent the wafer 13 from being separated.

The cleaning liquid for removing the organic matter formed on the wafer 13 includes strongly acidic sulfuric acid (H 2 SO 4 ) supplied from the first cleaning liquid supply unit 12. Sulfuric acid is weak in reactivity of the stock solution and cannot remove organic matter. Therefore, the sulfuric acid can be diluted to increase the reactivity. However, when sulfuric acid is diluted with ordinary water, it generates so much heat that it explodes. Therefore, it is necessary to use a substance which is diluted with sulfuric acid and generates low heat.

The corresponding material is hydrogen peroxide (H 2 O 2 ). Hydrogen peroxide is a compound of oxygen and hydrogen, and it is possible to reduce the exothermic heat with sulfuric acid while retaining the properties of water to dilute sulfuric acid. Therefore, hydrogen peroxide is supplied by the 2nd washing | cleaning liquid supply part 14 in predetermined flow volume according to the supply amount of the said sulfuric acid.

Hydrogen peroxide and sulfuric acid are uniformly mixed in a manifold at a predetermined ratio. The manifold 20 receives and mixes sulfuric acid and hydrogen peroxide separately through the first and second supply pipes 16 and 18 connected by the first cleaning solution supply unit 12 and the second cleaning solution supply unit 14. Although not shown, the manifold 20 is provided with cleaning solutions through a boundary formed with a plurality of pores to prevent excessive mixing of sulfuric acid and hydrogen peroxide supplied through the first supply pipe 16 and the second supply pipe 18. It is formed to be in contact. The apparatus may further include a cooler or chiller for cooling the exotherm generated when the sulfuric acid and hydrogen peroxide are mixed.

The cleaning liquid mixed in the manifold 20 is supplied to the cavitation nozzle 40 through the third supply pipe 22 and the first pipe. It is also mixed by process gases such as oxygen, nitrogen, carbon dioxide, or argon supplied from the gas supply. The process gas may flow through the fourth supply pipe 32 (the second pipe) formed between the gas supply part and the cavitation nozzle 40.

The cavitation nozzle 40 mixes the cleaning solution in which sulfuric acid and hydrogen peroxide flowing in the third supply pipe 22 are mixed with the process gas supplied from the fourth supply pipe 32 and discharges them onto the wafer 13. For example, the cleaning liquid is sprayed in the form of fine particles or fog while being mixed with the process gas.

FIG. 2A is a diagram showing a ball type cavitation nozzle 40 according to the first embodiment of the present invention, FIG. 2B is a sectional view of FIG. 2A, and FIG. 2C is a view showing the fluid flow in FIG. 2A.

As shown in Figure 2a, the ball type cavitation nozzle 40 of the first embodiment is a process gas is mixed in a narrow portion where the body for passing the cleaning liquid is reduced in the inner diameter at the center portion, the ball formed at the distal center of the body ( The cleaning liquid and the process gas are bypassed to the periphery of 44) to be uniformly mixed. Here, the body consists of a venturi tube in which the velocity of the fluid in the concave portion is increased. In the Venturi tube, Bernoulli's theorem explains the increase and decrease of the fluid velocity.

In other words, Bernoulli's theorem states that as the velocity of fluid flowing through a pipe increases, the pressure inside it drops. The effect of the venturi tube is that the fluid velocity at two points with different cross sections is inversely proportional to the cross section. At this time, the pressure of the fluid (static pressure) decreases where the speed of the fluid increases. Therefore, the process gas supplied through the fourth supply pipe 32 of the concave portion may be supplied in a large amount into the cavitation nozzle 40 even at a small pressure.

The ball type cavitation nozzle 40 flows the cleaning liquid into the front end of the body through the third supply pipe 22 and receives the process gas supplied from the fourth supply pipe 32 at the central portion of the body.

In addition, the cleaning liquid and the process gas are mixed while bypassing the cleaning liquid and the process gas to the periphery of the ball 44 formed at the central portion of the distal end portion of the body. For example, the ball 44 has a Teflon material excellent in corrosion resistance to a strong acid cleaning liquid. At this time, the cleaning liquid and the process gas can be sufficiently mixed because the pressure is increased and the flow distance is increased as compared with being discharged as it is blocked by the ball 44 at the end of the body. Ball 44 formed at the end of the body is a spherical body, the diameter is formed smaller than the inner diameter of the body.

As shown in FIG. 2B, the ball 44 is secured by connecting bars 45 at the inner center of the body. Here, the ball 44 is formed to be supported on the inner wall of the body with a gap through which the fluid mixed with the cleaning liquid and the process gas can flow through the inner wall of the body.

As shown in FIG. 2C, the fluid mixed with the cleaning liquid and the process gas is blocked in front of the ball 44, flows along the outer circumferential surface of the ball 44, and then proceeds to merge again at the rear of the ball 44. . The rear of the ball 44 may be more uniformly mixed while the vortex of the cleaning liquid and the process gas is generated.

Therefore, the ball type cavitation nozzle 40 according to the first embodiment may uniformly mix the cleaning liquid and the process gas supplied into the body by using the ball 45 formed at the end of the venturi tube.

3A is a diagram showing a cylindrical type cavitation nozzle 40 according to a second embodiment of the present invention, FIG. 3B is a cross sectional view of FIG. 3A, and FIG. 3C is a view of the fluid flow in FIG. 3A.

As shown in FIG. 3A, the cylindrical type cavitation nozzle 40 of the second embodiment is provided around the plurality of cylinders 50 in which cleaning liquid and process gas supplied inside the body of the body vent tube are formed at the distal center of the body. It is formed to be uniformly mixed while passing. Similarly, the body is made of a venturi tube, which is a concave part of the body and is partially blocked by a plurality of cylinders 50 at the end of the body widening at the rear end while the process gas and the cleaning liquid meet each other.

For example, the cylindrical type cavitation nozzle 40 introduces the cleaning liquid to the front end of the body through the third supply pipe 22 and receives the process gas supplied from the fourth supply pipe 32 at the concave portion of the center of the body. In addition, it is formed so as to be uniformly mixed while passing between the plurality of cylinders 50 without discharging the cleaning liquid and the process gas at the ends. Therefore, the plurality of cylinders 50 formed at the distal end of the body block the cleaning liquid and the process gas to serve to mix to have a uniform mixing ratio.

As shown in FIG. 3B, the plurality of cylinders 50 are formed in parallel to each other inside the distal end of the body, and the spacing of the plurality of cylinders 50 is kept constant by the plurality of support bars 51. It is formed to be. In addition, the plurality of cylinders 50 and the plurality of support bars are formed in a mesh structure because they are formed to cross each other at a predetermined interval. For example, the mesh structure has a plurality of pores or voids.

Therefore, the cleaning liquid and the process gas passing through the body of the venturi tube may be uniformly mixed while passing through a plurality of pores or pores formed by crossing the plurality of cylinders 50 and the plurality of support bars.

As shown in FIG. 3C, the fluid mixed with the cleaning liquid and the process gas may flow while being mixed around the plurality of cylinders 50 more uniformly by vortices occurring behind the plurality of cylinders 50. have.

Therefore, the cylindrical type cavitation nozzle 40 according to the second embodiment may uniformly mix the cleaning liquid and the process gas supplied into the body by using the plurality of cylinders 51 formed at the end of the venturi tube.

4A is a diagram illustrating a pinwheel type cavitation nozzle 40 according to a third embodiment of the present invention, FIG. 4B is a cross-sectional view of FIG. 4A, and FIG. 4C is a view of the fluid flow in FIG. 4A.

As shown in Figure 4a, the pinwheel type cavitation nozzle 40 of the third embodiment is uniformly passed as the cleaning liquid and process gas supplied into the body of the body vent tube passes through the pinwheel 60 formed at the end of the body. It is formed to be mixed. Here, the cleaning liquid and the process gas mixed with each other while passing through the venturi tube are blocked by the pin wheel 60 at the end of the body and flow while being rotated in a predetermined direction.

For example, the pinwheel type cavitation nozzle 40 introduces the cleaning liquid to the front end of the body through the third supply pipe 22 and receives the process gas supplied from the fourth supply pipe 32 at the concave portion of the center of the body. In addition, it is formed to be uniformly mixed while being rotated in the shape to be used by the blade of the pin wheel 60 formed at the end. Therefore, the pin wheel 60 formed at the distal end of the body serves to mix to have a uniform mixing ratio while rotating the cleaning liquid and process gas.

As shown in FIG. 4B, the pin wheel 60 has wings radially formed from the inner center of the distal end of the body to the inner wall, and protrusions 61 protruding from the inner wall are formed between the wings. Here, the pin wheel 60 is formed so that the cross section may have a cosmos shape. In addition, since the pin wheel 60 is formed in a propeller shape and fixed to the inner wall of the body end, the pin wheel 60 is formed to have a structure in which the cleaning liquid and the process gas passing therebetween are rotated and mixed. The protrusions 61 are formed to increase the area in contact with the cleaning liquid and the process gas passed between the pin wheels 60 to mix more uniformly.

As shown in FIG. 4C, the vane cross section of the pin wheel 60 is formed in a streamline shape to uniformly mix them while blocking the cleaning liquid and the process gas and rotating in one direction. Fluid blocked in front of the blade of the pinwheel 60 is flowed by bypassing a long distance along the surface of the blade, it is formed to be mixed at a constant mixing ratio while being combined again at the rear end of the blade.

Therefore, the cylindrical type cavitation nozzle 40 according to the third embodiment may uniformly mix the cleaning liquid and the process gas supplied into the body by using the pin wheel 60 formed at the end of the venturi tube.

Although not shown, the cavitation nozzle 40 according to the fourth embodiment of the present invention may be formed in a megasonic type in which a cleaning liquid and a process gas are mixed and sprayed by sound waves at the end of the body. This is because it is possible to spray the cleaning liquid and the process gas of which the pressure is lowered at the end of the body of the venturi tube while mixing with a predetermined energy.

As described above, the cavitation nozzle 40 according to the first to fourth embodiments of the present invention is formed to uniformly mix the cleaning liquid and the process gas and to spray the wafer 13. In addition, the cleaning liquid and the process gas passing through the cavitation nozzle 40 are heated to be sprayed at about 120 ° C to about 150 ° C.

FIG. 5 is a view showing a heater surrounding the outer circumference of the body of the cavitation nozzle 40 of the first to fourth embodiments, and a coil-shaped heater is wound around the outer circumferential surface at the end of the body of the cavitation nozzle 40. . Although not shown, a power supply unit for supplying power to the heater is further formed.

 Therefore, the cleaning solution and the process gas uniformly mixed through the cavitation nozzle 40 may be heated to a predetermined temperature and sprayed onto the wafer 13 to activate the reactivity of the mixture of the cleaning solution and the process gas.

As a result, the wafer cleaning apparatus 100 according to the embodiment of the present invention uniformly mixes and sprays the cleaning liquid and the process gas by using a cavitation nozzle having a ball, a cylinder, a pin pin, or a megasonic at the end of the venturi tube. The failure of the cleaning process can be prevented or minimized.

In addition, it is also possible to form a heater surrounding the outer peripheral surface of the body end of the cavitation nozzle to raise the temperature of the cleaning liquid to a high temperature to perform a high temperature cleaning process.

The above description of the embodiments is merely given by way of example with reference to the drawings in order to provide a more thorough understanding of the present invention and should not be construed as limiting the invention.

In addition, for those skilled in the art, various changes and modifications may be made without departing from the basic principles of the present invention.

1 is a diagram schematically showing a wafer cleaning apparatus according to an embodiment of the present invention.

2A is a diagram showing a ball type cavitation nozzle according to a first embodiment of the present invention.

2B is a sectional view of FIG. 2A;

FIG. 2C shows the fluid flow in FIG. 2A. FIG.

3A is a diagram showing a cylindrical type cavitation nozzle according to a second embodiment of the present invention.

3B is a cross-sectional view of FIG. 3A.

3C shows the fluid flow in FIG. 3A.

4A is a diagram showing a pinwheel type cavitation nozzle according to a third embodiment of the present invention.

4B is a cross-sectional view of FIG. 4A.

4C shows the fluid flow in FIG. 4A.

5 shows a heater enclosing the outside of the cavitation nozzle body of the first to fourth embodiments;

Claims (8)

A chuck supporting the wafer; A cleaning liquid supply unit supplying a cleaning liquid for cleaning an organic material formed on a wafer surface supported on the chuck; A gas supply unit supplying a gas mixed with the cleaning liquid supplied from the cleaning liquid supply unit; And a cavitation nozzle configured to mix and discharge the gas supplied from the gas supply part and the cleaning liquid supply part, and the cleaning liquid. The method of claim 1, And the cleaning solution supply unit includes a first cleaning solution supply unit supplying sulfuric acid and a second cleaning solution supply unit supplying fruit water. The method of claim 1, The cavitation nozzle is a wafer cleaning apparatus, characterized in that it comprises a ball-type nozzle in the center of the ball at the end of the body is coupled to the first pipe through which the cleaning liquid flows and the second pipe through which the gas flows. The method of claim 1, The cavitation nozzle is a wafer cleaning apparatus, characterized in that it comprises a cylindrical nozzle blocked a plurality of cylinders at the end of the body is coupled to the first pipe through which the cleaning liquid flows and the second pipe through which the gas flows. The method of claim 1, The cavitation nozzle is a wafer cleaning apparatus, characterized in that the pinwheel is blocked by the pinwheel at the end of the body is coupled to the first pipe through which the cleaning liquid flows and the second pipe through which the gas flows. The method of claim 1, The cavitation nozzle includes a megasonic type nozzle for spraying and mixing the cleaning liquid and the gas by sound waves at the end of the body coupled to the first pipe through which the cleaning liquid flows and the second pipe through which the gas flows. Wafer cleaning apparatus. The method of claim 1, The cavitation nozzle comprises a heater for heating the cleaning liquid and the gas at the end of the body is coupled to the first pipe through which the cleaning liquid flows and the second pipe through which the gas flows. The method of claim 7, wherein The heater is a wafer cleaning apparatus, characterized in that it comprises a heating wire wound around the body.
KR1020080074430A 2008-07-30 2008-07-30 Apparatus for cleaning wafer KR20100012971A (en)

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KR1020080074430A KR20100012971A (en) 2008-07-30 2008-07-30 Apparatus for cleaning wafer

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101428446B1 (en) * 2013-03-25 2014-08-08 (주)나린테크 Apparatus for Injecting Gas
KR20190029409A (en) * 2017-09-11 2019-03-20 주식회사 솔텍코리아 Cleaning Apparatus Of Thin Film Deposition
KR20210136435A (en) * 2020-05-07 2021-11-17 무진전자 주식회사 Mixed fluid dispensing apparatus equipped with temperature reduction preventing function

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101428446B1 (en) * 2013-03-25 2014-08-08 (주)나린테크 Apparatus for Injecting Gas
KR20190029409A (en) * 2017-09-11 2019-03-20 주식회사 솔텍코리아 Cleaning Apparatus Of Thin Film Deposition
KR20210136435A (en) * 2020-05-07 2021-11-17 무진전자 주식회사 Mixed fluid dispensing apparatus equipped with temperature reduction preventing function

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